CN108521066A - A kind of laser amplification device and method - Google Patents
A kind of laser amplification device and method Download PDFInfo
- Publication number
- CN108521066A CN108521066A CN201810555753.7A CN201810555753A CN108521066A CN 108521066 A CN108521066 A CN 108521066A CN 201810555753 A CN201810555753 A CN 201810555753A CN 108521066 A CN108521066 A CN 108521066A
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- laser
- reflection cavity
- amplification device
- electric field
- reflection
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- 230000003321 amplification Effects 0.000 title claims abstract description 41
- 238000003199 nucleic acid amplification method Methods 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 11
- 230000005684 electric field Effects 0.000 claims abstract description 29
- 238000007789 sealing Methods 0.000 claims description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 20
- 210000002381 plasma Anatomy 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000005469 synchrotron radiation Effects 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 210000005239 tubule Anatomy 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/083—Ring lasers
- H01S3/0835—Gas ring lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/1022—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
The present invention provides a kind of laser amplification device and method, including reflection cavity and rf electric field focalizer, it is full of luminous gas in the reflection cavity；Described reflection cavity at least part is located within the scope of the Voice segment of the rf electric field focalizer；It is described reflection cavity outer wall be equipped with for laser by slit.The beneficial effects of the invention are as follows：Replace traditional linear resonator cavities using high reflection annular reflection chamber, solves the problems, such as not penetrate diaphragm properly in dark purple exterior domain so that deep ultraviolet laser is resonated by multiple reflections and realizes amplification；Laser reflection path can be accurately controlled by adjusting the incident angle of incident laser or the size of slit, realize that the high-quality-factor of laser is adjusted, and adjustable range is much larger than traditional laser resonator.
Description
Technical field
The present invention relates to laser technology field, more particularly to a kind of laser amplification device and method.
Background technology
There are mainly three types of the schemes for realizing extreme ultraviolet photolithographic (EUV) light source at present：Synchrotron radiation source；Laser plasma
EUV light source；Discharge plasma EUV light source.
Synchrotron radiation light source is the novel artificial light source to be grown up based on high energy electron ringotron.Synchrotron radiation
Source X-ray source is the highest x-ray source of current brightness, with output energy is big, stability is strong, linearity is good, light source is clean
The advantages that.But this x-ray source needs to build electron linear accelerator and electron storage of the cost at 1500~20,000,000 dollars
Ring involves great expense, rigorous service condition, and experimental implementation is complicated, is unsuitable for large-scale industrial production.
The principle that laser plasma EUV light source generates EUV light is radiated at including xenon or tin target with superlaser, is led to
It crosses excitation and obtains high energy ionic plasma.In recent years since CO2 lasers have higher energy conversion efficiency, and have
The advantages of at low cost, good beam quality, people will gradually drive laser from 1.06 μm of Nd:YAG laser is transferred to 10.6 μm
CO2 lasers.CO2 lasers mainly bombard highdensity target (Xe, Sn, Li) by high-power CO2 lasers and generate
The plasma of dense plasmas, to the extreme ultraviolet radiation light that excitation wavelength is 13.5nm, although the critical density of CO2 lasers
Very low guaranteed its there is smaller self-absorption, but the density too low generation for also affecting EUV light.
Discharge plasma EUV light source technology is that pulse high-voltage is added in discharge gas, generates plasma, release
Extreme ultraviolet is that electric energy is converted into plasma energy, can improve energy conversion efficiency, and device relatively simplifies, and throws
Money and operation cost are low, easily operated maintenance.But due to the ablation of tube wall and electrode, discharge plasma light source generates residual
Piece is more, is easy to pollute EUV collection optical systems.Simultaneously in high repetition frequency process gas discharge, electrode and hair
Tubule wall can deposit a large amount of heat, influence the capillary electrode service life.
Invention content
The technical problem to be solved by the present invention is to how be efficiently and conveniently amplified to laser.
In order to solve the above-mentioned technical problem, a kind of laser amplification device, technical scheme of the present invention are disclosed in the present invention
It is implemented：
A kind of laser amplification device, including reflection cavity and rf electric field focalizer, the reflection cavity are interior filled with luminous gas；
Described reflection cavity at least part is located within the scope of the Voice segment of the rf electric field focalizer；The reflection cavity is equipped with for swashing
Light by slit.
Preferably, the reflection cavity is annular reflection chamber, and the outside of the reflection cavity is equipped with protrusion, the protrusion with it is described
Reflection cavity is connected to, and the rf electric field focalizer is opposite with the protrusion.
Preferably, the reflection cavity cavity body structure is annular tube structure.
Preferably, the laser amplification device further includes the diaphragm for sealing the slit, and laser can pass through described
Diaphragm.
Preferably, the slit is adjustable slit.
Preferably, the slit width can be adjusted within the scope of 10 μm to 1mm.
Preferably, the quantity of the protrusion be more than one, the quantity of the rf electric field focalizer with it is described protrusion
It is identical；The laser amplification device further includes holder, and the rf electric field focalizer is fixed on the holder, and described convex
Rise opposite, the support ring is around being positioned over outside the reflection cavity.
Preferably, the reflection cavity is equipped with air inlet and gas outlet.
A kind of laser amplification method is also disclosed, seed laser is amplified using the laser amplification device.
Preferably, the laser amplification method can be poly- by the incidence angle or the rf electric field that adjust the seed laser
The field strength of burnt device changes laser amplifier multiple.
The beneficial effects of the practice of the present invention is：
1, replace traditional linear resonator cavities using high reflection annular reflection chamber, it is unsuitable in dark purple exterior domain to solve
The problem of through diaphragm so that deep ultraviolet laser is resonated by multiple reflections and realizes amplification；
2, laser reflection path can be accurately controlled by adjusting the incident angle of incident laser or the size of slit, it is real
The high-quality-factor of existing laser is adjusted, and adjustable range is much larger than traditional laser resonator.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
A kind of embodiment of invention for those of ordinary skill in the art without creative efforts, can be with
Obtain other attached drawings according to these attached drawings.
Fig. 1 is the structural schematic diagram of laser amplification device in one embodiment；
Fig. 2 is the structural schematic diagram of reflection cavity in one embodiment；
Fig. 3 is another structural schematic diagram of laser amplification device in one embodiment；
Fig. 4 is another structural schematic diagram of laser amplification device in one embodiment；
Fig. 5 is the structural schematic diagram of holder and reflection cavity in one embodiment.
In above-mentioned attached drawing, each figure number label indicates respectively：
1- reflection cavities, 11- protrusions, 2- rf electric field focalizers, 3- laser reflections path, 4- holders.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without creative efforts
Embodiment shall fall within the protection scope of the present invention.
In a specific embodiment, as shown in Figure 1, Figure 2, a kind of laser amplification device, including reflection cavity 1, rf electric field
Focalizer 2, the reflection cavity 1 are interior filled with luminous gas；1 at least part of the reflection cavity is located at the rf electric field focalizer
Within the scope of 2 Voice segment；The reflection cavity 1 be equipped with for laser by slit.
The deep ultraviolet laser generated using higher hamonic wave is adjusted the incident angle of laser, it is made to be penetrated from slit as seed
Enter in reflection cavity 1, reflected in reflection cavity 1, rf electric field focalizer 2 is coupled with reflection cavity 1, and energy is coupled to
In annular reflection chamber 1, luminous gas conversion upon excitation is plasma, and incident laser when plasma slab by absorbing energy
Amount realizes the enhancing amplification of laser, is seen by adjusting the incident angle of laser, control its reflection path, can realize laser
The high-quality-factor of device adjusts (adjusting Q)；Slit is opened on reflection cavity 1, and injecting 1 inside of reflection cavity for laser carries out instead
It penetrates, the position that slit is opened up can be 1 outside of reflection cavity, can also be 1 inside of reflection cavity, those skilled in the art can be according to not
It is same to be selected.The concrete structure of rf electric field focalizer 2 can refer to document CN205752100U, CN206225324U,
CN106469641A、CN106992110A、CN206595228U。
Luminous gas described in the disclosure is with having correspondence one by one, incident seed to swash between the wavelength of incident laser
Light is usually the pulsed light of 30fs-3ps, pulse frequency 1KHz-80MHz；Luminous gas be typically pure gas such as He, Ne,
Ar, Kr, Xe etc., by taking Kr gas as an example, when being pumped using 780nm, the seed laser of generation can be 20.8nm, 30.5nm,
37.0nm etc., Kr gas are corresponding will to be energized into 13 ranks, 19 ranks and 23 ranks.The selection of gaseous species belongs to people in the art
The common knowledge of member, naturally it is also possible to be combination between these aforementioned species or these gases and other gases
Combination, or be only made of other species, it is not particularly limited herein.
Laser amplification device described in the disclosure replaces traditional linear resonator cavities using high reflection annular reflection chamber, solves
The problem of dark purple exterior domain does not properly penetrate diaphragm so that deep ultraviolet laser is realized by multiple reflections resonance to be put
Greatly.But the disclosure can not also can be only used to deep ultraviolet laser amplification, it can also be used to extreme ultraviolet laser or other frequency bands
Laser amplifier.
In a preferred embodiment, the reflection cavity 1 is annular reflection chamber, and the outside of 1 reflection cavity is equipped with convex
It plays 11, described raised 11 to be connected to the reflection cavity 1, and the rf electric field focalizer 2 is opposite with described raised 11.
It is also filled with luminous gas in protrusion 11, setting protrusion 11 enables luminous gas and rf electric field in reflection cavity 1
Focalizer preferably couples.
In a preferred embodiment, such as Fig. 2,1 cavity body structure of the reflection cavity is annular tube structure.
The reflection cavity 1 of annular tube structure can preferably control the reflection path of laser, and toroid surface bending is smooth, makes
Laser is obtained can constantly to reflect and lose less on surface.
In a preferred embodiment, the laser amplification device further includes the diaphragm for sealing the slit,
Laser can pass through the diaphragm.
In a preferred embodiment, the slit is adjustable slit.
In a preferred embodiment, the slit width can be adjusted within the scope of 10 μm to 1mm.
The size of slit is related with the laser power size of input, and when input power is big, slit needs open big, input power
Hour slit can be opened smaller.Such as the laser power of input is when being 0.01mW, the size of slit is generally 10 μm of -0.1mm's
Range, when the seed laser power of input is 0.1mW, the size of slit is generally in the range of 0.1mm-0.3mm, the seed of input
When laser power is 0.2mW, for the size of slit generally in the range of 0.2mm-0.6mm, the seed laser power of input is 1.0mW
When, generally in the range of 0.4mm-1.0mm, those skilled in the art can be adjusted the size of slit according to actual conditions.
In a preferred embodiment, raised 11 quantity is more than one, the rf electric field focalizer 2
Quantity is identical as the protrusion；The laser amplification device further includes holder 4, and the rf electric field focalizer 2 is fixed in
Opposite with described raised 11 on the holder, the holder 4 surround and is positioned over outside the reflection cavity 1.
Protrusion 11 is identical as the quantity of both rf electric field focalizers 2, when the quantity of protrusion 11 is more than two, protrusion
11 are uniformly distributed in 1 outside of reflection cavity, and distance is identical between adjacent protrusion 11；Each rf electric field focalizer 2 is one corresponding
Protrusion 11, the quantity of rf electric field focalizer 2 is more, and the effect of laser enhancing is better, and those skilled in the art can be according to reality
It is selected.
In a preferred embodiment, the reflection cavity 1 is equipped with air inlet and gas outlet.
It is 110nm laser below for wavelength, needs to open up air inlet and gas outlet on reflection cavity 1, at work
It needs constantly to inject luminous gas；It is the laser of 110nm or more for wavelength, then reflection cavity 1 should be sealing structure, by luminous gas
Body is sealed in inside.
In another specific embodiment, a kind of laser amplification method is also disclosed, utilizes the laser amplification device
Seed laser is amplified.
In a preferred embodiment, the laser amplification method can by adjust the seed laser incidence angle or
The field strength of the rf electric field focalizer 2 changes laser amplifier multiple.
Amplification factor is mainly determined by the reflectivity of the incidence angle of laser, the field strength of rf electric field focalizer, reflection cavity jointly
Fixed, usual incidence angle is the bigger the better and (is more than 60 degree), and the higher the better for the field strength of focalizer, the reflectivity on reflection cavity surface it is more big more
Good, the amplification factor of theoretical calculation can reach 10 times to 1000 times, can pass through the incidence of adjusting seed laser in use
Angle adjusts the field strength of rf electric field focalizer to change the amplification factor of laser.
The mechanism for generating extreme ultraviolet laser amplification at present is seldom, is mainly heated and is shone using more powerful pumping laser
Gas generates plasma.This pumping laser sufficiently bulky, the power consumption on kilowatt in volume, volume such as small refrigerator, cost
Costliness, in 50-150 ten thousand or so, service life was at 10,000 hours or so.The disclosure utilizes solid state RF focusing technology, uses
Low-voltage direct solid state RF source, lithium battery can power, and volume ratio A5 notepads are smaller, and service life was on 20,000 hours an or more left sides
The right side, 250 watts or so of power consumption.
The above-mentioned various embodiments enumerated can be combined with each other implementation, those skilled in the art under the premise of reconcilable
In combination with attached drawing and above to the explanation of embodiment, as the foundation being combined to the technical characteristic in different embodiments.
It should be pointed out that the foregoing is merely illustrative of the preferred embodiments of the present invention, it is not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent replacement, improvement and so on should be included in the guarantor of the present invention
Within the scope of shield.
Claims (10)
1. a kind of laser amplification device, it is characterised in that：Including reflection cavity and rf electric field focalizer,
Filled with luminous gas in the reflection cavity；
Described reflection cavity at least part is located within the scope of the Voice segment of the rf electric field focalizer；
The reflection cavity be equipped with for laser by slit.
2. laser amplification device according to claim 1, it is characterised in that：The reflection cavity is annular reflection chamber, described
The outside of reflection cavity is equipped with protrusion, and the protrusion is connected to the reflection cavity, and the rf electric field focalizer and the protrusion
Relatively.
3. laser amplification device according to claim 2, it is characterised in that：The reflection cavity cavity body structure is ring pipe knot
Structure.
4. laser amplification device according to claim 1, it is characterised in that：It further include the window for sealing the slit
Piece, laser can pass through the diaphragm.
5. laser amplification device according to claim 1, it is characterised in that：The slit is adjustable slit.
6. according to the laser amplification device described in right 5, it is characterised in that：The slit width can be arrived at 10 μm within the scope of 1mm
It is adjusted.
7. laser amplification device according to claim 2, it is characterised in that：The quantity of the protrusion be more than one, institute
The quantity for stating rf electric field focalizer is identical as the protrusion；
The laser amplification device further includes holder, and the rf electric field focalizer is fixed on the holder, and described convex
Rise opposite, the support ring is around being positioned over outside the reflection cavity.
8. laser amplification device according to claim 1, it is characterised in that：The reflection cavity is equipped with air inlet and outlet
Mouthful.
9. a kind of laser amplification method, it is characterised in that：Utilize the laser amplification device pair as described in claim 1~8 is any
Seed laser is amplified.
10. laser amplification method according to claim 9, it is characterised in that：By the incidence for adjusting the seed laser
The field strength of angle or the rf electric field focalizer changes laser amplifier multiple.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810555753.7A CN108521066A (en) | 2018-06-01 | 2018-06-01 | A kind of laser amplification device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810555753.7A CN108521066A (en) | 2018-06-01 | 2018-06-01 | A kind of laser amplification device and method |
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| Publication Number | Publication Date |
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| CN108521066A true CN108521066A (en) | 2018-09-11 |
Family
ID=63427034
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| CN201810555753.7A Pending CN108521066A (en) | 2018-06-01 | 2018-06-01 | A kind of laser amplification device and method |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5293396A (en) * | 1991-07-19 | 1994-03-08 | Agency Of Industrial Science And Technology | Plasma generating apparatus and method for extreme-ultaviolet laser |
| CN2391349Y (en) * | 1999-09-24 | 2000-08-09 | 中国科学院上海光学精密机械研究所 | Radial wave laser excited by ring radio frequency resonant cavity |
| CN103149804A (en) * | 2013-01-22 | 2013-06-12 | 华中科技大学 | Device and method for generating extreme ultraviolet source based on radial polarization laser driving |
| CN105333953A (en) * | 2015-10-13 | 2016-02-17 | 华中科技大学 | Tunable broadband laser plasma pole ultraviolet light source |
| CN205752100U (en) * | 2016-04-25 | 2016-11-30 | 费勉仪器科技（上海）有限公司 | A kind of efficient high brightness vacuum-ultraviolet light source apparatus |
| CN206595228U (en) * | 2016-12-29 | 2017-10-27 | 费勉仪器科技（上海）有限公司 | A kind of effective UV curing light source of RF excited |
| CN208189968U (en) * | 2018-06-01 | 2018-12-04 | 费勉仪器科技（上海）有限公司 | A kind of laser amplification device |
-
2018
- 2018-06-01 CN CN201810555753.7A patent/CN108521066A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5293396A (en) * | 1991-07-19 | 1994-03-08 | Agency Of Industrial Science And Technology | Plasma generating apparatus and method for extreme-ultaviolet laser |
| CN2391349Y (en) * | 1999-09-24 | 2000-08-09 | 中国科学院上海光学精密机械研究所 | Radial wave laser excited by ring radio frequency resonant cavity |
| CN103149804A (en) * | 2013-01-22 | 2013-06-12 | 华中科技大学 | Device and method for generating extreme ultraviolet source based on radial polarization laser driving |
| CN105333953A (en) * | 2015-10-13 | 2016-02-17 | 华中科技大学 | Tunable broadband laser plasma pole ultraviolet light source |
| CN205752100U (en) * | 2016-04-25 | 2016-11-30 | 费勉仪器科技（上海）有限公司 | A kind of efficient high brightness vacuum-ultraviolet light source apparatus |
| CN206595228U (en) * | 2016-12-29 | 2017-10-27 | 费勉仪器科技（上海）有限公司 | A kind of effective UV curing light source of RF excited |
| CN208189968U (en) * | 2018-06-01 | 2018-12-04 | 费勉仪器科技（上海）有限公司 | A kind of laser amplification device |
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