CN112952540B - Alkali metal vapor laser - Google Patents
Alkali metal vapor laser Download PDFInfo
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- CN112952540B CN112952540B CN201911176430.8A CN201911176430A CN112952540B CN 112952540 B CN112952540 B CN 112952540B CN 201911176430 A CN201911176430 A CN 201911176430A CN 112952540 B CN112952540 B CN 112952540B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08059—Constructional details of the reflector, e.g. shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/227—Metal vapour
Abstract
The invention provides an alkali metal vapor laser, comprising: the device comprises a rear cavity mirror, an output coupling mirror, a gain pool, a dichroic mirror, a pumping light reflector, a semiconductor pumping source and a pumping source shaping system; the rear cavity mirror and the output coupling mirror form a laser resonant cavity, and laser is output through the output coupling mirror; the dichroic mirror is arranged between the gain cell and the output coupling mirror and is set to have a surface normal forming an angle of 45 degrees with the optical axis of the resonant cavity; the gain tank comprises an alkali metal steam tank and a temperature control furnace for heating and maintaining the temperature of the alkali metal steam tank, the alkali metal steam tank is a uniform hollow cylinder, and the hollow part of the alkali metal steam tank is filled with mixed steam formed by alkali metal steam and buffer gas. The alkali metal vapor laser provided by the invention can efficiently use the pump light and realize high-efficiency operation.
Description
Technical Field
The invention relates to the technical field of laser, in particular to an alkali metal laser vapor laser.
Background
An alkali metal vapor laser (DPAL) is a novel gas laser, has extremely high quantum efficiency and good thermal management performance, and is one of the research hotspots in the field of high-energy laser. DPAL is a three-level laser that requires a higher pump power density. Therefore, maintaining a high average pumping power density in the alkali metal vapor pool is one of the key technologies for achieving efficient operation of DPAL.
However, in order to achieve a high average pump power density, a smaller pump light absorption efficiency is inevitably required, so that a higher pump light power density is obtained in the alkali metal vapor pool along the propagation direction of the pump light, and a higher proportion of the pump light is not absorbed, thereby severely restricting the operating efficiency of the DPAL.
Disclosure of Invention
In light of the above-mentioned problem of low pumping light utilization of the conventional DPAL laser, an alkali metal vapor laser is provided. The invention mainly utilizes the reflector with a specific curvature radius to reflect unabsorbed pump light back into the steam pool for reabsorption, thereby achieving the effects of improving the pump power density and increasing the absorption efficiency of the pump light.
The technical means adopted by the invention are as follows:
an alkali metal vapor laser comprising: the semiconductor pump source, the rear cavity mirror, the gain pool, the dichroic mirror and the output coupling mirror are sequentially arranged according to the light path;
the rear cavity mirror and the output coupling mirror form a laser resonant cavity, and laser is output through the output coupling mirror; the dichroic mirror is arranged between the gain cell and the output coupling mirror and is set to have a surface normal forming an angle of 45 degrees with the optical axis of the resonant cavity;
the gain tank comprises an alkali metal steam tank and a temperature control furnace for heating and maintaining the temperature of the alkali metal steam tank, the alkali metal steam tank is a uniform hollow cylinder, and the hollow part of the alkali metal steam tank is filled with mixed steam formed by alkali metal steam and buffer gas.
Furthermore, the temperature control furnace is a rectangular chamber formed by six aluminum plates through bolting, and heating holes capable of being inserted with heating rods are formed in the edge positions of the aluminum plates; the alkali metal steam pool is placed in the middle position in the temperature control furnace; the central positions of the aluminum plate for bearing the laser beam and the aluminum plate opposite to the aluminum plate on the temperature control furnace are provided with light through holes, and the light through holes are concentric with the circular end surface of the alkali metal steam pool.
Further, two circular end faces of the alkali metal vapor pool are plated with high-transmission films for laser wavelength, or high-transmission rate is obtained according to the Brewster angle calculated by using the refractive index corresponding to the laser wavelength.
Further, the surface of the rear cavity mirror facing the gain cell is plated with a high-reflection film for laser wavelength, and the surface facing the pumping source is plated with an anti-reflection film for pumping light; the surface of the dichroic mirror is plated with an antireflection film for laser incident at an angle of 45 degrees, the surface of the dichroic mirror is plated with a high-reflection film for semiconductor pump light incident at an angle of 45 degrees, and the surface of the dichroic mirror is plated with a high-reflection film for the semiconductor pump light incident at an angle of 45 degrees.
Furthermore, the output coupling mirror is a GRM mirror, and forms a positive branch unstable resonator with the rear cavity mirror.
Further, the alkali metal vapor is one of potassium vapor, rubidium vapor and cesium vapor.
Further, the buffer gas is any one of methane, ethane and propane, or a mixed gas of any one of the methane, ethane and propane and helium; the gas pressure of the buffer gas is not less than 1 atmosphere and not more than 30 atmospheres.
Furthermore, the laser also comprises a pumping source shaping system which is arranged between the semiconductor pumping source and the back cavity mirror and is used for focusing pumping light.
Furthermore, the laser also comprises a pumping light reflector arranged on one side of the reflecting surface of the dichroic mirror.
Compared with the prior art, the invention has the following advantages:
the invention discloses an alkali metal vapor laser, which comprises a back cavity mirror, an output coupling mirror, a gain pool, a dichroic mirror, a pumping light reflector, a semiconductor pumping source and a pumping source shaping system, wherein a laser resonant cavity is formed by the back cavity mirror and the output coupling mirror, the dichroic mirror is positioned between the gain pool and the output coupling mirror, the surface normal line of the dichroic mirror is arranged at an angle of 45 degrees with the optical axis of the resonant cavity, the pumping light is focused by the pumping source shaping system, the pumping light enters the gain pool through the back cavity mirror, and the unabsorbed pumping light is reflected back to the gain pool by the pumping light reflector for reabsorption after passing through the dichroic mirror. The alkali metal vapor laser provided by the invention has high pumping power density and absorption efficiency, can efficiently use pumping light, and has high DPAL operation efficiency.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic diagram of an alkali metal vapor laser according to the present invention;
FIG. 2a is a front view of the temperature controlled furnace structure of the gain tank of the present invention;
FIG. 2b is a rear view of the temperature controlled furnace structure of the gain tank of the present invention;
FIG. 2c is a side view of the temperature control furnace structure of the gain tank of the present invention;
FIG. 3a is a side cross-sectional view of an alkali metal vapor cell structure according to the present invention;
FIG. 3b is a front view of the alkali metal vapor cell structure of the present invention;
FIG. 3c is a side view of the alkali metal vapor cell structure of the present invention.
In the figure: 1. a semiconductor pump source; 2. a pump source shaping system; 3. a rear cavity mirror; 4. a gain pool; 5. a pump light reflector; 6. a dichroic mirror; 7. an output coupling mirror; 8. a first light passing hole; 9. a heating rod; 10. an aluminum plate; 11. heating the hole; 12. a second light passing hole; 13. an alkali metal vapor pool; 14. a first round glass slide; 15. a round glass cylinder; 16. a second round slide; 17. a temperature control furnace; 18. and a thermocouple.
Detailed Description
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
The relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise. Meanwhile, it should be understood that the sizes of the respective portions shown in the drawings are not drawn in an actual proportional relationship for the convenience of description. Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate. Any specific values in all examples shown and discussed herein are to be construed as exemplary only and not as limiting. Thus, other examples of the exemplary embodiments may have different values. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be discussed further in subsequent figures.
In the description of the present invention, it is to be understood that the orientation or positional relationship indicated by the directional terms such as "front, rear, upper, lower, left, right", "lateral, vertical, horizontal" and "top, bottom", etc., are generally based on the orientation or positional relationship shown in the drawings, and are used for convenience of description and simplicity of description only, and in the absence of any contrary indication, these directional terms are not intended to indicate and imply that the device or element so referred to must have a particular orientation or be constructed and operated in a particular orientation, and therefore should not be considered as limiting the scope of the present invention: the terms "inner and outer" refer to the inner and outer relative to the profile of the respective component itself.
Spatially relative terms, such as "above … …," "above … …," "above … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial relationship to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, devices described as "above" or "on" other devices or configurations would then be oriented "below" or "under" the other devices or configurations. Thus, the exemplary term "above … …" can include both an orientation of "above … …" and "below … …". The device may be otherwise variously oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
It should be noted that the terms "first", "second", and the like are used to define the components, and are only used for convenience of distinguishing the corresponding components, and the terms have no special meanings unless otherwise stated, and therefore, the scope of the present invention should not be construed as being limited.
As shown in fig. 1, the present invention provides an alkali metal vapor laser, comprising: the semiconductor pump source 1, the rear cavity mirror 3, the gain pool 4, the dichroic mirror 6 and the output coupling mirror 7 are sequentially arranged according to an optical path; the rear cavity mirror 3 and the output coupling mirror 7 form a laser resonant cavity, and laser is output through the output coupling mirror 7; the dichroic mirror 6 is placed between the gain cell 4 and the output coupling mirror 7 and is set with a surface normal at an angle of 45 ° to the optical axis of the resonator. The laser also comprises a pumping source shaping system 2 which is arranged between the semiconductor pumping source 1 and the back cavity mirror 3 and is used for focusing pumping light, and a pumping light reflecting mirror 5 which is arranged on one side of the reflecting surface of the dichroic mirror 6. The gain tank 4 comprises an alkali metal steam tank 13 and a temperature control furnace 17 for heating and maintaining the temperature of the alkali metal steam tank 13, wherein the alkali metal steam tank 13 is a uniform hollow cylinder, and the hollow part of the alkali metal steam tank is filled with mixed steam consisting of alkali metal steam and buffer gas. The alkali metal vapor is one of potassium vapor, rubidium vapor and cesium vapor. The buffer gas is any one of methane, ethane and propane, or a mixed gas of any one of the methane, ethane and propane and helium.
Further, the temperature control furnace 17 is a rectangular chamber formed by bolting six aluminum plates 10, and the edge position of the aluminum plate 10 is provided with a heating hole 11 into which a heating rod 9 can be inserted; the alkali metal vapor pool 13 is placed in a central position within the temperature controlled oven 17; the central positions of the aluminum plate for bearing the laser beam and the aluminum plate opposite to the aluminum plate on the temperature control furnace 17 are provided with light through holes, and the light through holes are concentric with the circular end face of the alkali metal steam pool 13. The clear aperture is set to ensure that there is no obstruction to the laser and pump light. The heating furnace 17 is internally provided with a thermocouple 19 which is connected with a temperature controller and controls the temperature of the heating furnace 17 through the temperature controller.
Further, two circular end faces of the alkali metal vapor tank 13 are plated with high-transmittance films for laser wavelength, or are placed according to the Brewster angle calculated by using the refractive index corresponding to the laser wavelength to obtain high transmittance. The surface of the rear cavity mirror 3 facing the gain cell 4 plates a high-reflection film for laser wavelength and the surface facing the pumping source plates an anti-reflection film for pumping light; the surface of the dichroic mirror 6 is plated with an antireflection film for laser incident at an angle of 45 degrees, the surface of the dichroic mirror 4 is plated with a high-reflection film for semiconductor pump light incident at an angle of 45 degrees, and the pump light reflector 5 is plated with a high-reflection film for the incident pump light.
Still further, the output coupling mirror 7 is a GRM mirror, and forms a positive branch unstable resonator with the rear cavity mirror 3.
The technical solution of the present invention is further explained by a specific application example.
The invention overcomes the defect of low utilization rate of pumping light of the traditional alkali metal vapor laser and provides a design of the alkali metal vapor laser. Fig. 1 shows a schematic structural diagram of an alkali metal vapor laser provided in an embodiment of the present invention, fig. 2a to 2c are schematic structural diagrams of a gain cell temperature control furnace, and fig. 3a to 3c are schematic structural diagrams of an alkali metal vapor cell. For convenience of explanation, only the parts related to the embodiments of the present invention are shown, and detailed as follows:
the alkali metal vapor laser comprises a back cavity mirror 3, an output coupling mirror 7, a gain pool 4, a dichroic mirror 6, a pumping light reflector 5, a semiconductor pumping source 1 and a pumping source shaping system 2, wherein the gain pool 4 is composed of an alkali metal vapor pool 13 and a temperature control furnace 17, the alkali metal vapor pool 13 is a hollow cylindrical closed chamber formed by welding or bonding two circular glass sheets, namely a first circular glass sheet 14, a second circular glass sheet 16 and a circular glass cylinder 15, one of alkali metal potassium, rubidium and cesium is filled in the hollow cylindrical closed chamber, one or a mixed gas of one of methane, ethane and propane and helium is used as a buffer gas, the pressure of the filled buffer gas is more than or equal to 1 atmosphere and less than or equal to 30 atmospheres, and concretely, in practical application, the alkali metal type, the pumping light reflector and the semiconductor pumping source shaping system can be selected according to the theoretical design of the actual alkali metal laser, Buffer gas species and their pressure, for example: alkali metal rubidium is selected as a gain medium, a mixed gas of He and methane is selected as a buffer gas, wherein the methane partial pressure is 200torr, and the He gas partial pressure is 560 torr.
The design of the temperature-controlled furnace 17 should take into consideration factors such as the heating rate and the energy consumption of the alkali metal steam pool 13, and the structure of the temperature-controlled furnace 17 given in this embodiment is detailed as follows: the temperature control furnace 17 is a rectangular chamber formed by connecting six aluminum plates 10 through screws, the thickness of each aluminum plate 17 is more than or equal to 10mm and less than or equal to 20mm, a hole 11 with the diameter more than 8mm is drilled in each aluminum plate, and a heating rod 9 can be inserted into each hole. Preferably, the power of the heating rod 9 is not less than 200W, and the number of the heating rods used in each temperature controlled oven 17 is not less than 4 and not more than 12. The heating furnace 17 is provided with a thermocouple 18, which is connected with a temperature controller and controls the temperature of the heating furnace 17 through the temperature controller. Specifically, the length, width and height of the rectangular temperature control furnace 17 are 5-10mm larger than the corresponding rectangular envelope size of the alkali metal steam pool 13, and the alkali metal steam pool 13 is arranged in the temperature control furnace 17. Preferably, the temperature is heated and maintained at 100 ℃ or higher and 220 ℃ or lower. Two aluminum plates on a heating furnace 17 parallel to two circular end faces of the cylindrical alkali metal steam pool are respectively provided with a first light through hole 8 and a second light through hole 12 in a machining mode, the machined first light through hole 8 and the machined second light through hole 12 are concentric with the circular end faces of the alkali metal steam pool 13, and the diameters of the light through holes are guaranteed not to shield laser and pump light.
The structure of the temperature-controlled furnace in this embodiment is merely an example, and may be taken as a preferred scheme, and in practical application, the shape and the heating mode of the temperature-controlled furnace may be flexibly designed according to specific situations.
The rear cavity mirror 3 and the output coupling mirror 7 form a laser resonant cavity, laser is output through the output coupling mirror 7, the dichroic mirror 6 is arranged between the gain pool 4 and the output coupling mirror 7, the surface normal of the dichroic mirror 6 forms an angle of 45 degrees with the optical axis of the resonant cavity, the pumping source shaping system 2 is composed of one lens or a plurality of lenses, the lens can be a cylindrical lens or a spherical lens, the semiconductor pumping source 1 adopts the pumping source shaping system 2 to focus pumping light, the pumping light enters the alkali metal steam pool 13 through the rear cavity mirror 3 and a small hole A8 on an aluminum plate of the temperature control furnace in sequence, the unabsorbed pumping light is transmitted out of the gain pool 4 through a small hole B12 on the aluminum plate of the temperature control furnace, then is reflected at 45 degrees through the dichroic mirror 6 to reach the pumping light reflecting mirror 5, and then returns to the alkali metal steam pool 13 along the original optical path through the pumping light reflecting mirror, the radius of curvature of the pump light reflector 5 is larger than can be determined according to experimental results.
The alkali metal vapor cell 13 of this example can be made of glass material, and both circular end faces of the alkali metal vapor cell 13 are coated with a high transmission film for the laser wavelength. The surface of the rear cavity mirror 3 facing the gain pool 4 is plated with a high reflection film for laser wavelength, the wavelength of semiconductor pump light is plated with an antireflection film, the surface of the rear cavity mirror facing the semiconductor pump source 1 is plated with an antireflection film for pump light, two surfaces of the dichroic mirror 6 are plated with antireflection films for laser incident at an angle of 45 degrees, the surface of the dichroic mirror facing the gain pool is plated with a high reflection film for semiconductor pump light incident at an angle of 45 degrees, and the pump light reflector 5 is plated with a high reflection film for incident pump light. The output coupling mirror 7 of the present embodiment is a GRM gaussian mirror, the transmittance at the center point of the GRM gaussian mirror is 60%, and the rear cavity mirror 3 forms a positive branch unstable cavity, and the unstable cavity amplification rate is 2.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (7)
1. An alkali metal vapor laser, comprising: the device comprises a semiconductor pump source (1), a pump source shaping system (2), a rear cavity mirror (3), a gain pool (4), a pump light reflecting mirror (5), a dichroic mirror (6) and an output coupling mirror (7) which are sequentially arranged according to an optical path;
the rear cavity mirror (3) and the output coupling mirror (7) form a laser resonant cavity, and laser is output through the output coupling mirror (7); the dichroic mirror (6) is arranged between the gain cell (4) and the output coupling mirror (7) and is set to have a surface normal forming an angle of 45 degrees with the optical axis of the resonant cavity;
the gain tank (4) comprises an alkali metal steam tank (13) and a temperature control furnace (17) for heating and maintaining the temperature of the alkali metal steam tank (13), the alkali metal steam tank (13) is a uniform hollow cylinder, and the hollow part of the alkali metal steam tank is filled with mixed steam consisting of alkali metal steam and buffer gas;
a first light through hole (8) and a second light through hole (12) are respectively arranged on a temperature control furnace (17) parallel to two circular end faces of the alkali metal steam pool (13), and the first light through hole (8) and the second light through hole (12) are concentric with the circular end faces of the alkali metal steam pool (13);
the semiconductor pump source (1) focuses the pump light through the pump source shaping system (2), the pump light sequentially enters the alkali metal steam pool (13) through the rear cavity mirror (3) and the first light through hole (8), the unabsorbed pump light is transmitted out of the gain pool (4) through the second light through hole (12), then is reflected through the dichroic mirror (6) to reach the pump light reflecting mirror (5), and then returns to the alkali metal steam pool (13) through the pump light reflecting mirror (5) along the original light path.
2. Alkali metal vapor laser according to claim 1, characterized in that the temperature controlled furnace (17) is a rectangular chamber formed by bolting six aluminum plates (10), the edge positions of the aluminum plates (10) are provided with heating holes (11) into which heating rods (9) can be inserted; the alkali metal vapor pool (13) is placed in a central position in the temperature-controlled furnace (17); the central positions of the aluminum plate for bearing the laser beam and the aluminum plate opposite to the aluminum plate on the temperature control furnace (17) are provided with light through holes, and the light through holes are concentric with the circular end face of the alkali metal steam pool (13).
3. Alkali metal vapor laser according to claim 2, characterized in that the two rounded end faces of the alkali metal vapor cell (13) are coated with a high transmission film at the laser wavelength or are placed in the brewster angle calculated using the refractive index corresponding to the laser wavelength to obtain a high transmission.
4. Alkali metal vapor laser according to claim 2, characterized in that the surface of the back cavity mirror (3) facing the gain cell (4) is coated with a highly reflective film for the laser wavelength and an anti-reflection film for the pumping light facing the pumping source; the surface of the dichroic mirror (6) is plated with an antireflection film for laser incident at an angle of 45 degrees, the surface facing the gain pool (4) is plated with a high-reflection film for semiconductor pump light incident at an angle of 45 degrees, and the pump light reflector (5) is plated with a high-reflection film for the incident pump light.
5. Alkali metal vapor laser according to claim 1, characterized in that the output coupling mirror (7) is a GRM mirror and forms a positive branch unstable cavity with the back cavity mirror (3).
6. The alkali metal vapor laser of any one of claims 1-3, wherein the alkali metal vapor is one of potassium vapor, rubidium vapor, and cesium vapor.
7. The alkali metal vapor laser according to claim 6, wherein the buffer gas is any one of methane, ethane and propane, or a mixed gas of any one of methane, ethane and propane and helium; the gas pressure of the buffer gas is not less than 1 atmosphere and not more than 30 atmospheres.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022888A (en) * | 2012-12-21 | 2013-04-03 | 中国科学院长春光学精密机械与物理研究所 | Alkali metal steam laser of polarized optical pumping |
| CN103036140A (en) * | 2012-12-21 | 2013-04-10 | 中国科学院长春光学精密机械与物理研究所 | Royal purple laser device based on frequency doubling alkali metal steam lasers |
| CN107800037A (en) * | 2017-11-07 | 2018-03-13 | 西南技术物理研究所 | A kind of three wavelength alkali metal vapour lasers |
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| US6643311B2 (en) * | 2001-10-23 | 2003-11-04 | William F. Krupke | Diode-pumped alkali laser |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103022888A (en) * | 2012-12-21 | 2013-04-03 | 中国科学院长春光学精密机械与物理研究所 | Alkali metal steam laser of polarized optical pumping |
| CN103036140A (en) * | 2012-12-21 | 2013-04-10 | 中国科学院长春光学精密机械与物理研究所 | Royal purple laser device based on frequency doubling alkali metal steam lasers |
| CN107800037A (en) * | 2017-11-07 | 2018-03-13 | 西南技术物理研究所 | A kind of three wavelength alkali metal vapour lasers |
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| Title |
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| LD端面泵浦铯蒸汽激光器的模式匹配;谢冀江 等;《光学精密工程》;20151031;第23卷(第10期);第2755-2760页 * |
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