CN108520857A - A kind of fast recovery diode and preparation method thereof - Google Patents
A kind of fast recovery diode and preparation method thereof Download PDFInfo
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- CN108520857A CN108520857A CN201810295947.8A CN201810295947A CN108520857A CN 108520857 A CN108520857 A CN 108520857A CN 201810295947 A CN201810295947 A CN 201810295947A CN 108520857 A CN108520857 A CN 108520857A
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- 238000011084 recovery Methods 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title description 5
- 238000002347 injection Methods 0.000 claims abstract description 27
- 239000007924 injection Substances 0.000 claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 238000007667 floating Methods 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 6
- 230000003213 activating effect Effects 0.000 claims abstract description 4
- 239000012535 impurity Substances 0.000 claims abstract description 4
- 239000000872 buffer Substances 0.000 claims description 20
- 239000002019 doping agent Substances 0.000 claims description 12
- 238000002513 implantation Methods 0.000 claims description 9
- 230000003139 buffering effect Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 230000002441 reversible effect Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004153 renaturation Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses a kind of fast recovery diode and its manufacturing method, wherein manufacturing method includes：The N-type buffer-layer surface at the back side of diode body is aoxidized, oxide layer is formed；The oxide layer of the presumptive area at the back side of diode body is etched, windowing is formed；P-well injection is carried out to diode body by windowing, forms p-well region；Remaining oxide layer is performed etching, dew carrys out N++ and injects window；N++ impurity, line activating of going forward side by side are injected to N++ injection windows so that p-well region, which is formed, is in floating state, and built-in thyristor is constituted with anode region and drift region.P-well region is formed by setting, then N++ injections are carried out, so that p-well region, which is formed, is in floating state, built-in thyristor is constituted with the anode region of diode body and drift region, coordinate the tradeoff between diode conduction voltage drop and soft restorability, so that can be obtained the tradeoff between better conduction voltage drop and soft recovery characteristics it is not necessary that silicon chip is thinned, high-quality fast recovery diode is obtained.
Description
Technical field
The present invention relates to technical field of semiconductor device preparation, more particularly to a kind of fast recovery diode and its making side
Method.
Background technology
Fast recovery diode (abbreviation FRD) is a kind of semiconductor having the characteristics that switching characteristic is good, reverse recovery time is short
Diode is mainly used in the electronic circuits such as Switching Power Supply, PWM pulse width modulators, frequency converter, as two pole of high-frequency rectification
Pipe, fly-wheel diode or damper diode use.The internal structure of fast recovery diode is different from common PN junction diode, it belongs to
In PIN junction type diode, i.e., base area I is increased among P-type silicon material and N-type silicon materials, constitute PIN silicon chips.Very because of base area
Thin, reverse recovery charge very little, so the reverse recovery time of fast recovery diode is shorter, forward voltage drop is relatively low, reverse breakdown
Voltage (pressure voltage) is higher.
Ideal FRD must be provided simultaneously with low conduction voltage drop, low reverse recovery loss and the high soft recovery factor, however this
There are intrinsic contradictory relations between a little characteristics, it is difficult to realize simultaneously.Wherein, when low conduction voltage drop FRD requires its forward conduction
Entirety carrier concentration must be sufficiently high in vivo, to ensure that drift region obtains sufficient conductance modulation.And low reverse recovery loss
Whole carrier is low as possible so that its reverse recovery charge is small, on the other hand in body when FRD requires its forward conduction on the one hand
It is required that nearby carrier concentration is low as possible so that it obtains low Reverse recovery peak point current for its anode knot.Soft recovery characteristics are good
FRD then require cathode side carrier concentration when its forward conduction higher to obtain steady and lasting current tail.
To improve the soft recovery characteristics of FRD, propose that FCE diodes, the diode increase p-type in cathode side in the prior art
Injection, the p-type injection region form parasitic triode with drift region and the areas anode P, which can be in FRD Reverse recoveries
When to drift region inject hole, the nonequilibrium carrier that is scanned out by electric field is supplemented, so as to improve the Reverse recovery performance of diode.
This FCE diodes obtain preferable soft recovery characteristics by sacrificing part cathode area, cause its forward conduction voltage drop higher.
The p type island region area directly determines the soft restorability of FCE diodes, if the area of the p type island region is larger, FCE diodes it is soft
Restorability is preferable, but the forward conduction voltage drop of diode will be higher simultaneously, if the area of the p type island region is smaller, FCE diodes
Soft restorability it is poor, but the forward conduction voltage drop of diode simultaneously is relatively low.Thickness usually by reducing diode drift region
It spends to obtain better tradeoff, but this frequently can lead to diode safety workspace and strong performance declines.
Invention content
The object of the present invention is to provide a kind of fast recovery diode and preparation method thereof, tunable diode conduction voltage drop with
Tradeoff between soft restorability need not be thinned silicon chip and can be obtained between better conduction voltage drop and soft recovery characteristics
Tradeoff.
In order to solve the above technical problems, an embodiment of the present invention provides a kind of fast recovery diode manufacturing methods, including：
Step 1, the N-type buffer-layer surface at the back side of diode body is aoxidized, forms oxide layer；
Step 2, the oxide layer of the presumptive area at the back side of the diode body is etched, windowing is formed；
Step 3, p-well injection is carried out to the diode body by the windowing, forms p-well region；
Step 4, the remaining oxide layer is performed etching, dew carrys out N++ and injects window；
Step 5, N++ impurity, line activating of going forward side by side are injected to N++ injection windows so that the p-well region is formed in floating
Dummy status constitutes built-in thyristor with the anode region of the diode body and drift region.
Wherein, the implantation dosage for p-well injection being carried out to the diode body is 1e14/cm2~5e14/cm2。
Wherein, the anode region P-type dopant amount of the diode body is 1e12/cm2~1e13/cm2。
Wherein, the dopant dose of the N-type buffer layer of the diode body is 1e12/cm2~1e14/cm2。
Wherein, the junction depth of the N-type buffer layer is 5 μm~15 μm.
Wherein, the anode region p-type doping junction depth is 5 μm~15 μm.
In addition to this, the embodiment of the present invention additionally provides a kind of fast recovery diode, including the oxidation being arranged from top to bottom
Layer, N++ implanted layers, N-type buffer layer, drift region and anode region further include passing through the N++ implanted layers from the oxide layer bottom
To the p-well region of the N-type buffer layer, the p-well region is floating state, and the N++ implanted layers are divided into multiple injection regions N++,
Built-in thyristor is constituted with the anode region of the diode body and drift region.
Wherein, the implantation dosage of the p-well region is 1e14/cm2~5e14/cm2。
Wherein, the dopant dose of the N-type buffer layer of the diode body is 1e12/cm2~1e14/cm2。
Wherein, the junction depth of the N-type buffer layer is 5 μm~15 μm.
Compared with prior art, fast recovery diode provided in an embodiment of the present invention and manufacturing method have following
Advantage：
Fast recovery diode provided in an embodiment of the present invention and manufacturing method, by being carried out at the back side of diode body
Oxide etch forms windowing and carries out p-well injection, forms p-well region, then carries out N++ injections so that p-well region, which is formed, is in floating
State constitutes built-in thyristor with the anode region of the diode body and drift region, coordinate diode conduction voltage drop with it is soft extensive
Tradeoff between renaturation energy so that can be obtained between better conduction voltage drop and soft recovery characteristics it is not necessary that silicon chip is thinned
Tradeoff obtains high-quality fast recovery diode, and increase processing step is less, and processing step is also walked in traditional technique
Within rapid, without increasing new equipment, cost increases less.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is the present invention
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
The step of Fig. 1 is a kind of specific implementation mode of fast recovery diode manufacturing method provided in an embodiment of the present invention is flowed
Journey schematic diagram；
Fig. 2 is a kind of structural schematic diagram of specific implementation mode of fast recovery diode provided in an embodiment of the present invention.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
~Fig. 2 is please referred to Fig.1, Fig. 1 is that one kind of fast recovery diode manufacturing method provided in an embodiment of the present invention is specific
The step flow diagram of embodiment；Fig. 2 is a kind of specific embodiment party of fast recovery diode provided in an embodiment of the present invention
The structural schematic diagram of formula.
In a specific embodiment, the fast recovery diode manufacturing method, including：
Step 1, the N-type buffer-layer surface at the back side of diode body is aoxidized, forms oxide layer；Oxygen is set here
The purpose for changing layer is, to carry out selective etching later, to form the windowing of p-well to form protection, the present invention for
The method of oxidation and the formation thickness of oxide layer are not specifically limited.
Step 2, the oxide layer of the presumptive area at the back side of the diode body is etched, windowing is formed；Opening here
The setting of window is to form p-well region, size and turn on window of the present invention for windowing to carry out p-well injection later
It does not limit, the method that dry etching can also use exposure imaging may be used and perform etching.
Step 3, p-well injection is carried out to the diode body by the windowing, forms p-well region；
Step 4, the remaining oxide layer is performed etching, dew carrys out N++ and injects window；
Step 5, N++ impurity, line activating of going forward side by side are injected to N++ injection windows so that the p-well region is formed in floating
Dummy status constitutes built-in thyristor with the anode region of the diode body and drift region.
Windowing progress p-well injection is formed by carrying out oxide etch at the back side of diode body, forms p-well region, so
N++ injections are carried out afterwards so that p-well region, which is formed, is in floating state, is constituted with the anode region of the diode body and drift region
Built-in thyristor coordinates the tradeoff between diode conduction voltage drop and soft restorability so that it is not necessary that silicon chip is thinned
The tradeoff between better conduction voltage drop and soft recovery characteristics is obtained, high-quality fast recovery diode is obtained, increases technique
Step is less, and processing step, also within traditional processing step, without increasing new equipment, cost increases less.
The dosage of p-well injection is not limited in the present invention, the depth and ionic species for the ion of injection are not
It limiting, the acceptable manufacturing cost and characteristic for generally requiring fast recovery diode as needed are designed, and one
As to the diode body carry out p-well injection implantation dosage be 1e14/cm2~5e14/cm2。
The junction depth of injection therein is generally several microns to more than ten microns.
In the present invention influence fast diode characteristic other than the characteristic of above-mentioned p-well, also mixed with anode region P
Miscellaneous and N-type buffer layer doping and thickness is related.
The present invention is mixed for the anode region P-type dopant amount of diode body and the N-type buffer layer of diode body
Miscellaneous dosage is not specifically limited, and the doping particle types and doping method and doping junction depth for the two are not specifically limited.
The anode region P-type dopant amount of the diode body is generally 1e12/cm2~1e13/cm2, the diode master
The dopant dose of the N-type buffer layer of body is generally 1e12/cm2~1e14/cm2。
The junction depth of the N-type buffer layer is 5 μm~15 μm, and the anode region p-type doping junction depth is 5 μm~15 μm.
In one embodiment, the dopant dose of the p-well of fast recovery diode made using the above method is 5e14/cm2,
The anode region P-type dopant amount of diode body is 1e12/cm2, the dopant dose one of the N-type buffer layer of the diode body
As be 1e12/cm2, junction depth is 10 μm.By constituting built-in thyristor with the anode region and drift region of the diode body,
So that obtain fast diode compared with the FCE diodes that the prior art summarizes, due to having the presence of p-well region, p type island region face
Product is not reduced, but also has carried out a degree of expansion so that there is good soft restorability, but the face in the areas N++
Product is basically unchanged, and forward conduction is relatively low.
I.e. fast recovery diode of the invention is the fast recovery diode of built-in thyristor, which passes through in diode
Cathode forms floating p-well region and its internal area N++, and built-in thyristor is constituted with anode region and drift region.The thyristor with
Diodes in parallel together, when diode forward is connected, diode for the NPN pipes inside thyristor provide base current to
Turn on thyristors is triggered, diode cathode conducting electric current area can be made full use of in this way, reduce the forward conduction pressure of diode
Drop.When diode reverse recovery, due to P-well floatings, electronics cannot be flowed out by p-well region from its area internal N++, can only
Flowed out by the areas N++ of its both sides, can so limit the speed that electronics is flowed out from cathodic region, diode reverse reverting be
Cathode retains more electronics, to ensure that it has better soft recovery characteristics.To sum up, compared to FCE diodes, it should
Diode has the tradeoff between better forward conduction voltage drop and soft recovery characteristics
In addition to this, the embodiment of the present invention additionally provides a kind of fast recovery diode, including the oxidation being arranged from top to bottom
Layer 10, N++ implanted layers 20, N-type buffer layer 30, drift region 40 and anode region 50, further include being passed through from 10 bottom of the oxide layer
The N++ implanted layers 20 arrive the p-well region 60 of the N-type buffer layer 30, and the p-well region 60 is floating state, and the N++ is injected
20 points of layer is multiple injection regions N++, and built-in thyristor is constituted with the anode region 50 of the diode body and drift region 40.
Since the fast recovery diode is manufactured using fast recovery diode manufacturing method as above, it should having the same
Friendship effect, details are not described herein by the present invention.
The present invention is for the implantation dosage of the implantation dosage of p-well region 60, junction depth and N-type buffer layer, junction depth, anode region
Implantation dosage and well depth are not specifically limited,
The implantation dosage of the p-well region 60 is generally 1e14/cm2~5e14/cm2, the N-type buffering of the diode body
The dopant dose of layer 30 is generally 1e12/cm2~1e14/cm2, the junction depth of the N-type buffer layer 30 is 5 μm~15 μm.
In conclusion fast recovery diode provided in an embodiment of the present invention and manufacturing method, by diode body
The back side carry out oxide etch formed windowing carry out p-well injection, formed p-well region, then carry out N++ injections so that p-well region shape
At in floating state, built-in thyristor is constituted with the anode region of the diode body and drift region, coordinates diode current flow
Tradeoff between pressure drop and soft restorability so that can be obtained better conduction voltage drop and soft recovery it is not necessary that silicon chip is thinned
Tradeoff between characteristic obtains high-quality fast recovery diode, and increase processing step is less, and processing step is also passing
Within the processing step of system, without increasing new equipment, cost increases less.
Fast recovery diode provided by the present invention and manufacturing method are described in detail above.It is used herein
Principle and implementation of the present invention are described for specific case, and the explanation of above example is only intended to help to understand
The method and its core concept of the present invention.It should be pointed out that for those skilled in the art, not departing from this
, can be with several improvements and modifications are made to the present invention under the premise of inventive principle, these improvement and modification also fall into the present invention
In scope of the claims.
Claims (10)
1. a kind of fast recovery diode manufacturing method, which is characterized in that including：
Step 1, the N-type buffer-layer surface at the back side of diode body is aoxidized, forms oxide layer；
Step 2, the oxide layer of the presumptive area at the back side of the diode body is etched, windowing is formed；
Step 3, p-well injection is carried out to the diode body by the windowing, forms p-well region；
Step 4, the remaining oxide layer is performed etching, dew carrys out N++ and injects window；
Step 5, N++ impurity, line activating of going forward side by side are injected to N++ injection windows so that the p-well region, which is formed, is in floating shape
State constitutes built-in thyristor with the anode region of the diode body and drift region.
2. fast recovery diode manufacturing method as described in claim 1, which is characterized in that carry out p-well to the diode body
The implantation dosage of injection is 1e14/cm2~5e14/cm2。
3. fast recovery diode manufacturing method as claimed in claim 2, which is characterized in that the anode region P of the diode body
Type dopant dose is 1e12/cm2~1e13/cm2。
4. fast recovery diode manufacturing method as claimed in claim 3, which is characterized in that the N-type of the diode body buffers
The dopant dose of layer is 1e12/cm2~1e14/cm2。
5. fast recovery diode manufacturing method as claimed in claim 4, which is characterized in that the junction depth of the N-type buffer layer is 5 μm
~15 μm.
6. fast recovery diode manufacturing method as claimed in claim 5, which is characterized in that the anode region p-type doping junction depth is 5
μm~15 μm.
7. a kind of fast recovery diode, which is characterized in that including oxide layer, N++ implanted layers, the N-type buffering being arranged from top to bottom
Layer, drift region and anode region further include passing through the N++ implanted layers to the p-well of the N-type buffer layer from the oxide layer bottom
Area, the p-well region are floating state, and the N++ implanted layers are divided into multiple injection regions N++, the sun with the diode body
Polar region and drift region constitute built-in thyristor.
8. fast recovery diode as claimed in claim 7, which is characterized in that the implantation dosage of the p-well region is 1e14/cm2~
5e14/cm2。
9. fast recovery diode as claimed in claim 8, which is characterized in that the doping of the N-type buffer layer of the diode body
Dosage is 1e12/cm2~1e14/cm2。
10. fast recovery diode as claimed in claim 9, which is characterized in that the junction depth of the N-type buffer layer is 5 μm~15 μm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810295947.8A CN108520857B (en) | 2018-03-30 | 2018-03-30 | Fast recovery diode and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810295947.8A CN108520857B (en) | 2018-03-30 | 2018-03-30 | Fast recovery diode and manufacturing method thereof |
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| CN108520857A true CN108520857A (en) | 2018-09-11 |
| CN108520857B CN108520857B (en) | 2021-06-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113964204A (en) * | 2021-09-06 | 2022-01-21 | 北京工业大学 | Diode with a high-voltage source |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070278472A1 (en) * | 2006-06-02 | 2007-12-06 | Infineon Technologies Ag | Soft Switching Semiconductor Component with High Robustness and Low Switching Losses |
| CN105405870A (en) * | 2015-12-03 | 2016-03-16 | 厦门元顺微电子技术有限公司 | Fabrication method of fast soft recovery diode |
| CN105702719A (en) * | 2014-12-15 | 2016-06-22 | 英飞凌科技股份有限公司 | Power Semiconductor Device with Improved Stability and Method for Producing the Same |
| CN107731932A (en) * | 2017-11-13 | 2018-02-23 | 成都方舟微电子有限公司 | A kind of power buffer diode chip structure and preparation method thereof |
-
2018
- 2018-03-30 CN CN201810295947.8A patent/CN108520857B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070278472A1 (en) * | 2006-06-02 | 2007-12-06 | Infineon Technologies Ag | Soft Switching Semiconductor Component with High Robustness and Low Switching Losses |
| CN105702719A (en) * | 2014-12-15 | 2016-06-22 | 英飞凌科技股份有限公司 | Power Semiconductor Device with Improved Stability and Method for Producing the Same |
| CN105405870A (en) * | 2015-12-03 | 2016-03-16 | 厦门元顺微电子技术有限公司 | Fabrication method of fast soft recovery diode |
| CN107731932A (en) * | 2017-11-13 | 2018-02-23 | 成都方舟微电子有限公司 | A kind of power buffer diode chip structure and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113964204A (en) * | 2021-09-06 | 2022-01-21 | 北京工业大学 | Diode with a high-voltage source |
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