CN108496286B - 双环激光器的波长控制 - Google Patents

双环激光器的波长控制 Download PDF

Info

Publication number
CN108496286B
CN108496286B CN201680079514.8A CN201680079514A CN108496286B CN 108496286 B CN108496286 B CN 108496286B CN 201680079514 A CN201680079514 A CN 201680079514A CN 108496286 B CN108496286 B CN 108496286B
Authority
CN
China
Prior art keywords
optical
ring resonator
edge
tuning mechanism
thermal tuning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680079514.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN108496286A (zh
Inventor
J-H·李
郑学哲
A·V·克里什纳莫西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oracle International Corp
Original Assignee
Oracle International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oracle International Corp filed Critical Oracle International Corp
Publication of CN108496286A publication Critical patent/CN108496286A/zh
Application granted granted Critical
Publication of CN108496286B publication Critical patent/CN108496286B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261Non-optical elements, e.g. laser driver components, heaters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/26Optical coupling means
    • G02B6/28Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29331Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by evanescent wave coupling
    • G02B6/29335Evanescent coupling to a resonator cavity, i.e. between a waveguide mode and a resonant mode of the cavity
    • G02B6/29338Loop resonators
    • G02B6/29341Loop resonators operating in a whispering gallery mode evanescently coupled to a light guide, e.g. sphere or disk or cylinder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255Controlling the frequency of the radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1007Branched waveguides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • H01S5/141External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/142External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Couplings Of Light Guides (AREA)
CN201680079514.8A 2016-01-22 2016-12-20 双环激光器的波长控制 Active CN108496286B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/004,569 US9608406B1 (en) 2016-01-22 2016-01-22 Wavelength control of a dual-ring laser
US15/004,569 2016-01-22
PCT/US2016/067790 WO2017127203A1 (en) 2016-01-22 2016-12-20 Wavelength control of a dual-ring laser

Publications (2)

Publication Number Publication Date
CN108496286A CN108496286A (zh) 2018-09-04
CN108496286B true CN108496286B (zh) 2020-02-28

Family

ID=57758798

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680079514.8A Active CN108496286B (zh) 2016-01-22 2016-12-20 双环激光器的波长控制

Country Status (5)

Country Link
US (1) US9608406B1 (https=)
EP (1) EP3406007B1 (https=)
JP (1) JP6911035B2 (https=)
CN (1) CN108496286B (https=)
WO (1) WO2017127203A1 (https=)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10263385B1 (en) 2016-12-21 2019-04-16 Acacia Communications, Inc. Wavelength locker
US10622786B2 (en) * 2017-04-20 2020-04-14 International Business Machines Corporation Laser apparatus and reservoir computing system
CA3061993C (en) * 2017-05-22 2025-04-01 Imec Vzw III-V/IV LASER SENSOR SYSTEM-CHIP FOR REAL-TIME MONITORING OF BLOOD COMPONENT CONCENTRATION LEVELS
US10644808B2 (en) * 2017-08-23 2020-05-05 Seagate Technology Llc Silicon photonics based optical network
US10530126B2 (en) * 2017-12-27 2020-01-07 Elenion Technologies, Llc External cavity laser
EP3764489A4 (en) * 2018-04-09 2021-03-24 Huawei Technologies Co., Ltd. TUNABLE WAVELENGTH LASER
EP3837573B1 (en) * 2018-08-16 2024-03-06 Telefonaktiebolaget LM Ericsson (publ) Mems/nems integrated broken racetrack tunable laser diode
JP7211017B2 (ja) 2018-11-02 2023-01-24 株式会社デンソー 光フィルタ、それを用いたレーザ光源および光送受信装置
CN111381323B (zh) * 2018-12-29 2023-02-28 中兴通讯股份有限公司 一种控制电路及方法
CN111463657B (zh) * 2019-01-18 2021-09-07 海思光电子有限公司 可调谐激光器
CN110048303A (zh) * 2019-03-18 2019-07-23 深圳市速腾聚创科技有限公司 一种激光器以及激光器系统
EP4248589A1 (en) * 2020-11-19 2023-09-27 Telefonaktiebolaget LM Ericsson (publ) Optical filter and methods
JP7819438B2 (ja) * 2021-07-27 2026-02-25 古河ファイテルオプティカルコンポーネンツ株式会社 波長フィルタ及びレーザ装置
US20220326357A1 (en) * 2021-09-22 2022-10-13 Intel Corporation Photonic integrated circuit and light detection and ranging system
WO2023059889A1 (en) * 2021-10-08 2023-04-13 Neophotonics Corporation Wavelength bandwidth expansion for tuning or chirping with a silicon photonic external cavity tunable laser
CN118077110A (zh) * 2021-10-19 2024-05-24 三菱电机株式会社 光半导体装置
EP4239813A1 (en) * 2022-03-03 2023-09-06 Nokia Solutions and Networks Oy Tunable laser and methods
CN115220151B (zh) * 2022-07-19 2023-11-14 欧梯恩智能科技(苏州)有限公司 基于微环谐振腔游标效应硅基光波导解调器件及方法
CN115498505B (zh) * 2022-11-14 2023-08-22 苏州熹联光芯微电子科技有限公司 一种波长可调激光器和激光器外腔
CN118352885A (zh) * 2022-12-27 2024-07-16 武汉万集光电技术有限公司 谐振模块、硅基外腔芯片、激光器及激光雷达
EP4441854A4 (en) * 2023-02-14 2025-04-09 Compoundtek Pte. Ltd. PHOTONIC DEVICE MADE OF SILICON FOR GENERATING LASER LIGHT
CN117013364A (zh) * 2023-07-14 2023-11-07 江苏华兴激光科技有限公司 一种宽光谱片上集成外腔可调谐激光器
WO2025015421A1 (en) * 2023-07-17 2025-01-23 Fonex Data Systems Inc. Laser cavity-based sensor and sensing method
CN117895326B (zh) * 2024-03-18 2024-06-18 赛丽科技(苏州)有限公司 集成激光器和波长控制方法
US20250323470A1 (en) * 2024-04-11 2025-10-16 Honeywell International Inc. Widely tunable brillouin laser based on vernier filter external cavity
WO2026048993A1 (ja) * 2024-08-30 2026-03-05 日亜化学工業株式会社 光回路
CN119994638B (zh) * 2024-12-30 2026-03-17 武汉光谷航天三江激光产业技术研究院有限公司 高精度宽调谐混合集成外腔半导体激光器及调谐方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010177539A (ja) * 2009-01-30 2010-08-12 Nec Corp 送信光源及びその製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4945907B2 (ja) * 2005-03-03 2012-06-06 日本電気株式会社 波長可変レーザ
JP4774761B2 (ja) * 2005-03-03 2011-09-14 日本電気株式会社 波長可変共振器、波長可変レーザ、光モジュール及びそれらの制御方法
JP2007271704A (ja) * 2006-03-30 2007-10-18 Nec Corp 可変光制御デバイス及び可変光制御方法
US7257283B1 (en) * 2006-06-30 2007-08-14 Intel Corporation Transmitter-receiver with integrated modulator array and hybrid bonded multi-wavelength laser array
JP2008251673A (ja) * 2007-03-29 2008-10-16 Nec Corp 光デバイスとその製造方法
JP2008270583A (ja) * 2007-04-23 2008-11-06 Nec Corp 波長可変光源装置とその制御方法,制御用プログラム
US20090046748A1 (en) * 2007-08-14 2009-02-19 Sumitomo Electric Industries, Ltd. Light-emitting device with precisely tuned and narrowed spectral width of optical output and an optical signal source providing the same
WO2009119284A1 (ja) * 2008-03-26 2009-10-01 日本電気株式会社 波長可変レーザ装置並びにその制御方法及び制御プログラム
JP2009278015A (ja) * 2008-05-16 2009-11-26 Nec Corp 平面光波回路及びこれを備えた波長可変レーザ装置
WO2013021422A1 (ja) * 2011-08-10 2013-02-14 富士通株式会社 外部共振器型半導体レーザ素子及び光素子
US8737846B2 (en) * 2012-01-30 2014-05-27 Oracle International Corporation Dynamic-grid comb optical source
WO2014115330A1 (ja) * 2013-01-28 2014-07-31 富士通株式会社 レーザ装置、光変調装置及び光半導体素子
JP6090022B2 (ja) * 2013-07-18 2017-03-08 富士通株式会社 光変調装置、光送信機及び光変調器の制御方法
JP6499170B2 (ja) * 2013-10-15 2019-04-10 エレニオン・テクノロジーズ・エルエルシー シリコンマイクロリングに基づくmod−mux wdm送信機の動作および安定化
US20150215043A1 (en) * 2014-01-30 2015-07-30 Alcatel-Lucent Usa Inc. Lasers Based On Optical Ring-Resonators

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010177539A (ja) * 2009-01-30 2010-08-12 Nec Corp 送信光源及びその製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Compact, low power consumption wavelength tunable laser with silicon photonic-wire waveguide micro-ring resonators;Tao Chu等;《ECOC》;20091231;全文 *
Microring-Resonator-Based Widely Tunable Lasers;Shinji Matsuo等;《IEEE Journal of Selected Topics in Quantum Electronics》;20090605;第15卷(第3(2009)期);全文 *

Also Published As

Publication number Publication date
US9608406B1 (en) 2017-03-28
JP6911035B2 (ja) 2021-07-28
WO2017127203A1 (en) 2017-07-27
CN108496286A (zh) 2018-09-04
JP2019503080A (ja) 2019-01-31
EP3406007B1 (en) 2021-03-10
EP3406007A1 (en) 2018-11-28

Similar Documents

Publication Publication Date Title
CN108496286B (zh) 双环激光器的波长控制
US9653882B1 (en) Wavelength control of an external cavity laser
CN118763500B (zh) 硅光子外腔可调谐激光器的波长控制方法
US10141710B2 (en) Ring-resonator-based laser with multiple wavelengths
US9575256B2 (en) Optical reflector based on a directional coupler and a coupled optical loop
US9638858B2 (en) Athermal hybrid optical source
US10281746B2 (en) Wavelength-tunable III-V/Si hybrid optical transmitter
CN101325306B (zh) 可调光源设备及其调节方法和控制程序
US9318868B2 (en) Tunable hybrid laser with carrier-induced phase control
Zhang et al. Sagnac loop mirror and micro-ring based laser cavity for silicon-on-insulator
US9837781B2 (en) External cavity laser with reduced optical mode-hopping
US9356419B1 (en) Temperature insensitive external cavity lasers on silicon
CN104081700B (zh) 动态网格梳状光源
US9551832B1 (en) Optical source with a grating-enhanced resonator
Malik et al. Low noise, tunable silicon photonic lasers
Wu et al. Hybrid integrated tunable external cavity laser with sub-10 Hz intrinsic linewidth
US10014659B2 (en) Laser array with distributed Bragg reflectors
US10090645B2 (en) Integrated laser with DBR-MRR mirror and multiple drop ports that provide balanced power
US9647424B2 (en) Single mode reflector using a nanobeam cavity
CN115498505B (zh) 一种波长可调激光器和激光器外腔
Li et al. A tunable silicon ring reflector

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant