CN108496286B - 双环激光器的波长控制 - Google Patents
双环激光器的波长控制 Download PDFInfo
- Publication number
- CN108496286B CN108496286B CN201680079514.8A CN201680079514A CN108496286B CN 108496286 B CN108496286 B CN 108496286B CN 201680079514 A CN201680079514 A CN 201680079514A CN 108496286 B CN108496286 B CN 108496286B
- Authority
- CN
- China
- Prior art keywords
- optical
- ring resonator
- edge
- tuning mechanism
- thermal tuning
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
- G02B6/29331—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by evanescent wave coupling
- G02B6/29335—Evanescent coupling to a resonator cavity, i.e. between a waveguide mode and a resonant mode of the cavity
- G02B6/29338—Loop resonators
- G02B6/29341—Loop resonators operating in a whispering gallery mode evanescently coupled to a light guide, e.g. sphere or disk or cylinder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1007—Branched waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Couplings Of Light Guides (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/004,569 US9608406B1 (en) | 2016-01-22 | 2016-01-22 | Wavelength control of a dual-ring laser |
| US15/004,569 | 2016-01-22 | ||
| PCT/US2016/067790 WO2017127203A1 (en) | 2016-01-22 | 2016-12-20 | Wavelength control of a dual-ring laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108496286A CN108496286A (zh) | 2018-09-04 |
| CN108496286B true CN108496286B (zh) | 2020-02-28 |
Family
ID=57758798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680079514.8A Active CN108496286B (zh) | 2016-01-22 | 2016-12-20 | 双环激光器的波长控制 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9608406B1 (https=) |
| EP (1) | EP3406007B1 (https=) |
| JP (1) | JP6911035B2 (https=) |
| CN (1) | CN108496286B (https=) |
| WO (1) | WO2017127203A1 (https=) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10263385B1 (en) | 2016-12-21 | 2019-04-16 | Acacia Communications, Inc. | Wavelength locker |
| US10622786B2 (en) * | 2017-04-20 | 2020-04-14 | International Business Machines Corporation | Laser apparatus and reservoir computing system |
| CA3061993C (en) * | 2017-05-22 | 2025-04-01 | Imec Vzw | III-V/IV LASER SENSOR SYSTEM-CHIP FOR REAL-TIME MONITORING OF BLOOD COMPONENT CONCENTRATION LEVELS |
| US10644808B2 (en) * | 2017-08-23 | 2020-05-05 | Seagate Technology Llc | Silicon photonics based optical network |
| US10530126B2 (en) * | 2017-12-27 | 2020-01-07 | Elenion Technologies, Llc | External cavity laser |
| EP3764489A4 (en) * | 2018-04-09 | 2021-03-24 | Huawei Technologies Co., Ltd. | TUNABLE WAVELENGTH LASER |
| EP3837573B1 (en) * | 2018-08-16 | 2024-03-06 | Telefonaktiebolaget LM Ericsson (publ) | Mems/nems integrated broken racetrack tunable laser diode |
| JP7211017B2 (ja) | 2018-11-02 | 2023-01-24 | 株式会社デンソー | 光フィルタ、それを用いたレーザ光源および光送受信装置 |
| CN111381323B (zh) * | 2018-12-29 | 2023-02-28 | 中兴通讯股份有限公司 | 一种控制电路及方法 |
| CN111463657B (zh) * | 2019-01-18 | 2021-09-07 | 海思光电子有限公司 | 可调谐激光器 |
| CN110048303A (zh) * | 2019-03-18 | 2019-07-23 | 深圳市速腾聚创科技有限公司 | 一种激光器以及激光器系统 |
| EP4248589A1 (en) * | 2020-11-19 | 2023-09-27 | Telefonaktiebolaget LM Ericsson (publ) | Optical filter and methods |
| JP7819438B2 (ja) * | 2021-07-27 | 2026-02-25 | 古河ファイテルオプティカルコンポーネンツ株式会社 | 波長フィルタ及びレーザ装置 |
| US20220326357A1 (en) * | 2021-09-22 | 2022-10-13 | Intel Corporation | Photonic integrated circuit and light detection and ranging system |
| WO2023059889A1 (en) * | 2021-10-08 | 2023-04-13 | Neophotonics Corporation | Wavelength bandwidth expansion for tuning or chirping with a silicon photonic external cavity tunable laser |
| CN118077110A (zh) * | 2021-10-19 | 2024-05-24 | 三菱电机株式会社 | 光半导体装置 |
| EP4239813A1 (en) * | 2022-03-03 | 2023-09-06 | Nokia Solutions and Networks Oy | Tunable laser and methods |
| CN115220151B (zh) * | 2022-07-19 | 2023-11-14 | 欧梯恩智能科技(苏州)有限公司 | 基于微环谐振腔游标效应硅基光波导解调器件及方法 |
| CN115498505B (zh) * | 2022-11-14 | 2023-08-22 | 苏州熹联光芯微电子科技有限公司 | 一种波长可调激光器和激光器外腔 |
| CN118352885A (zh) * | 2022-12-27 | 2024-07-16 | 武汉万集光电技术有限公司 | 谐振模块、硅基外腔芯片、激光器及激光雷达 |
| EP4441854A4 (en) * | 2023-02-14 | 2025-04-09 | Compoundtek Pte. Ltd. | PHOTONIC DEVICE MADE OF SILICON FOR GENERATING LASER LIGHT |
| CN117013364A (zh) * | 2023-07-14 | 2023-11-07 | 江苏华兴激光科技有限公司 | 一种宽光谱片上集成外腔可调谐激光器 |
| WO2025015421A1 (en) * | 2023-07-17 | 2025-01-23 | Fonex Data Systems Inc. | Laser cavity-based sensor and sensing method |
| CN117895326B (zh) * | 2024-03-18 | 2024-06-18 | 赛丽科技(苏州)有限公司 | 集成激光器和波长控制方法 |
| US20250323470A1 (en) * | 2024-04-11 | 2025-10-16 | Honeywell International Inc. | Widely tunable brillouin laser based on vernier filter external cavity |
| WO2026048993A1 (ja) * | 2024-08-30 | 2026-03-05 | 日亜化学工業株式会社 | 光回路 |
| CN119994638B (zh) * | 2024-12-30 | 2026-03-17 | 武汉光谷航天三江激光产业技术研究院有限公司 | 高精度宽调谐混合集成外腔半导体激光器及调谐方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010177539A (ja) * | 2009-01-30 | 2010-08-12 | Nec Corp | 送信光源及びその製造方法 |
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| JP4945907B2 (ja) * | 2005-03-03 | 2012-06-06 | 日本電気株式会社 | 波長可変レーザ |
| JP4774761B2 (ja) * | 2005-03-03 | 2011-09-14 | 日本電気株式会社 | 波長可変共振器、波長可変レーザ、光モジュール及びそれらの制御方法 |
| JP2007271704A (ja) * | 2006-03-30 | 2007-10-18 | Nec Corp | 可変光制御デバイス及び可変光制御方法 |
| US7257283B1 (en) * | 2006-06-30 | 2007-08-14 | Intel Corporation | Transmitter-receiver with integrated modulator array and hybrid bonded multi-wavelength laser array |
| JP2008251673A (ja) * | 2007-03-29 | 2008-10-16 | Nec Corp | 光デバイスとその製造方法 |
| JP2008270583A (ja) * | 2007-04-23 | 2008-11-06 | Nec Corp | 波長可変光源装置とその制御方法,制御用プログラム |
| US20090046748A1 (en) * | 2007-08-14 | 2009-02-19 | Sumitomo Electric Industries, Ltd. | Light-emitting device with precisely tuned and narrowed spectral width of optical output and an optical signal source providing the same |
| WO2009119284A1 (ja) * | 2008-03-26 | 2009-10-01 | 日本電気株式会社 | 波長可変レーザ装置並びにその制御方法及び制御プログラム |
| JP2009278015A (ja) * | 2008-05-16 | 2009-11-26 | Nec Corp | 平面光波回路及びこれを備えた波長可変レーザ装置 |
| WO2013021422A1 (ja) * | 2011-08-10 | 2013-02-14 | 富士通株式会社 | 外部共振器型半導体レーザ素子及び光素子 |
| US8737846B2 (en) * | 2012-01-30 | 2014-05-27 | Oracle International Corporation | Dynamic-grid comb optical source |
| WO2014115330A1 (ja) * | 2013-01-28 | 2014-07-31 | 富士通株式会社 | レーザ装置、光変調装置及び光半導体素子 |
| JP6090022B2 (ja) * | 2013-07-18 | 2017-03-08 | 富士通株式会社 | 光変調装置、光送信機及び光変調器の制御方法 |
| JP6499170B2 (ja) * | 2013-10-15 | 2019-04-10 | エレニオン・テクノロジーズ・エルエルシー | シリコンマイクロリングに基づくmod−mux wdm送信機の動作および安定化 |
| US20150215043A1 (en) * | 2014-01-30 | 2015-07-30 | Alcatel-Lucent Usa Inc. | Lasers Based On Optical Ring-Resonators |
-
2016
- 2016-01-22 US US15/004,569 patent/US9608406B1/en active Active
- 2016-12-20 EP EP16823479.7A patent/EP3406007B1/en active Active
- 2016-12-20 WO PCT/US2016/067790 patent/WO2017127203A1/en not_active Ceased
- 2016-12-20 JP JP2018536280A patent/JP6911035B2/ja active Active
- 2016-12-20 CN CN201680079514.8A patent/CN108496286B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010177539A (ja) * | 2009-01-30 | 2010-08-12 | Nec Corp | 送信光源及びその製造方法 |
Non-Patent Citations (2)
| Title |
|---|
| Compact, low power consumption wavelength tunable laser with silicon photonic-wire waveguide micro-ring resonators;Tao Chu等;《ECOC》;20091231;全文 * |
| Microring-Resonator-Based Widely Tunable Lasers;Shinji Matsuo等;《IEEE Journal of Selected Topics in Quantum Electronics》;20090605;第15卷(第3(2009)期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| US9608406B1 (en) | 2017-03-28 |
| JP6911035B2 (ja) | 2021-07-28 |
| WO2017127203A1 (en) | 2017-07-27 |
| CN108496286A (zh) | 2018-09-04 |
| JP2019503080A (ja) | 2019-01-31 |
| EP3406007B1 (en) | 2021-03-10 |
| EP3406007A1 (en) | 2018-11-28 |
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