CN108493251A - 屏蔽栅场效应晶体管及其制造方法 - Google Patents
屏蔽栅场效应晶体管及其制造方法 Download PDFInfo
- Publication number
- CN108493251A CN108493251A CN201810351436.3A CN201810351436A CN108493251A CN 108493251 A CN108493251 A CN 108493251A CN 201810351436 A CN201810351436 A CN 201810351436A CN 108493251 A CN108493251 A CN 108493251A
- Authority
- CN
- China
- Prior art keywords
- effect transistor
- field effect
- gate field
- manufacturing
- shielded gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 41
- 238000005530 etching Methods 0.000 claims description 11
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 15
- 230000015556 catabolic process Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810351436.3A CN108493251A (zh) | 2018-04-19 | 2018-04-19 | 屏蔽栅场效应晶体管及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810351436.3A CN108493251A (zh) | 2018-04-19 | 2018-04-19 | 屏蔽栅场效应晶体管及其制造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN108493251A true CN108493251A (zh) | 2018-09-04 |
Family
ID=63313601
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810351436.3A Pending CN108493251A (zh) | 2018-04-19 | 2018-04-19 | 屏蔽栅场效应晶体管及其制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108493251A (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101211965A (zh) * | 2006-12-25 | 2008-07-02 | 万国半导体股份有限公司 | 极度圆孔屏蔽的栅槽mosfet器件及其生产工艺 |
CN101615632A (zh) * | 2008-06-26 | 2009-12-30 | 飞兆半导体公司 | 用于形成具有包括氮化层的极间电介质的屏蔽栅沟槽fet的结构和方法 |
US20100044785A1 (en) * | 2008-01-15 | 2010-02-25 | Murphy James J | High aspect ratio trench structures with void-free fill material |
CN103904119A (zh) * | 2014-03-28 | 2014-07-02 | 中国科学院微电子研究所 | 一种具有纵向屏蔽栅的Trench MOSFET及其加工方法 |
-
2018
- 2018-04-19 CN CN201810351436.3A patent/CN108493251A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101211965A (zh) * | 2006-12-25 | 2008-07-02 | 万国半导体股份有限公司 | 极度圆孔屏蔽的栅槽mosfet器件及其生产工艺 |
US20100044785A1 (en) * | 2008-01-15 | 2010-02-25 | Murphy James J | High aspect ratio trench structures with void-free fill material |
CN101615632A (zh) * | 2008-06-26 | 2009-12-30 | 飞兆半导体公司 | 用于形成具有包括氮化层的极间电介质的屏蔽栅沟槽fet的结构和方法 |
CN103904119A (zh) * | 2014-03-28 | 2014-07-02 | 中国科学院微电子研究所 | 一种具有纵向屏蔽栅的Trench MOSFET及其加工方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108400094A (zh) | 屏蔽栅场效应晶体管及其制造方法(锤形) | |
US8445958B2 (en) | Power semiconductor device with trench bottom polysilicon and fabrication method thereof | |
CN108598165A (zh) | 屏蔽栅场效应晶体管及其制造方法(柱形) | |
US9960237B2 (en) | Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET | |
CN101866946B (zh) | 半导体装置 | |
US20120241862A1 (en) | Ldmos device and method for making the same | |
CN101299436A (zh) | 应用hdp淀积的源-体注入阻挡块的器件结构及制造方法 | |
CN101236991B (zh) | 半导体器件及其制造方法 | |
CN105742185B (zh) | 屏蔽栅功率器件及其制造方法 | |
CN102347220A (zh) | 具有薄epi工艺的沟槽超结mosfet器件及其制造方法 | |
CN111524976B (zh) | 一种低栅电荷的功率mos器件及其制造方法 | |
CN102299078A (zh) | 半导体器件的制造方法 | |
CN1725508A (zh) | 横向双扩散金属氧化物半导体ldmos元件及其加工方法 | |
CN109390393A (zh) | 具有厚沟槽底部氧化物的mosfet器件 | |
CN111785625A (zh) | 超级结器件的工艺方法 | |
CN108376647A (zh) | 屏蔽栅场效应晶体管及其制造方法(哑铃形) | |
CN108807506A (zh) | 带沟槽栅结构的深槽超结mosfet器件及其加工工艺 | |
KR100364815B1 (en) | High voltage device and fabricating method thereof | |
CN113078066A (zh) | 一种分离栅功率mosfet器件的制造方法 | |
CN107221500A (zh) | 双沟槽场效应管及其制备方法 | |
CN108493251A (zh) | 屏蔽栅场效应晶体管及其制造方法 | |
Chen et al. | Progressive development of superjunction power MOSFET devices | |
CN110400833A (zh) | 超结功率器件及其制造方法 | |
CN106972061A (zh) | 一种电子器件及其制备方法 | |
CN112530805B (zh) | 横向双扩散金属氧化物半导体器件及制作方法、电子装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20191113 Address after: 510700 Room 303, building 1, No. 23, Jinzhong Road, Huangpu District, Guangzhou City, Guangdong Province Applicant after: Guangzhou Anhai semiconductor Limited by Share Ltd Address before: Room 302, room 88, 7, Guiping Road, Xuhui District, Shanghai Applicant before: Zhang Shuai Applicant before: Huang Cuan |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20191204 Address after: Floor 12, building a1-3, Hanyu Jingu, no.7000, jingshidong Road, Jinan area, China (Shandong) pilot Free Trade Zone, Jinan City, Shandong Province, 250102 Applicant after: Jinan Anhai Semiconductor Co., Ltd Address before: 510700 Room 303, building 1, No. 23, Jinzhong Road, Huangpu District, Guangzhou City, Guangdong Province Applicant before: Guangzhou Anhai semiconductor Limited by Share Ltd |
|
TA01 | Transfer of patent application right | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180904 |
|
RJ01 | Rejection of invention patent application after publication |