CN101211965A - 极度圆孔屏蔽的栅槽mosfet器件及其生产工艺 - Google Patents
极度圆孔屏蔽的栅槽mosfet器件及其生产工艺 Download PDFInfo
- Publication number
- CN101211965A CN101211965A CNA2006101713923A CN200610171392A CN101211965A CN 101211965 A CN101211965 A CN 101211965A CN A2006101713923 A CNA2006101713923 A CN A2006101713923A CN 200610171392 A CN200610171392 A CN 200610171392A CN 101211965 A CN101211965 A CN 101211965A
- Authority
- CN
- China
- Prior art keywords
- groove
- grid
- circular hole
- mosfet device
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000005260 corrosion Methods 0.000 claims abstract description 13
- 230000007797 corrosion Effects 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000009413 insulation Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 39
- 238000005516 engineering process Methods 0.000 claims description 15
- 210000002421 cell wall Anatomy 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 10
- 238000011049 filling Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 241000208202 Linaceae Species 0.000 claims description 6
- 235000004431 Linum usitatissimum Nutrition 0.000 claims description 6
- 230000029058 respiratory gaseous exchange Effects 0.000 claims description 2
- 230000005669 field effect Effects 0.000 abstract description 3
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 2
- 150000004706 metal oxides Chemical class 0.000 abstract description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 25
- 229920005591 polysilicon Polymers 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (21)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2006101713923A CN101211965B (zh) | 2006-12-25 | 2006-12-25 | 极度圆孔屏蔽的栅槽mosfet器件及其生产工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2006101713923A CN101211965B (zh) | 2006-12-25 | 2006-12-25 | 极度圆孔屏蔽的栅槽mosfet器件及其生产工艺 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010102362511A Division CN101950720B (zh) | 2005-12-28 | 2006-12-25 | 极度圆孔屏蔽的栅槽mosfet器件及其生产工艺 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101211965A true CN101211965A (zh) | 2008-07-02 |
CN101211965B CN101211965B (zh) | 2011-06-15 |
Family
ID=39611770
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006101713923A Active CN101211965B (zh) | 2006-12-25 | 2006-12-25 | 极度圆孔屏蔽的栅槽mosfet器件及其生产工艺 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101211965B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108493251A (zh) * | 2018-04-19 | 2018-09-04 | 张帅 | 屏蔽栅场效应晶体管及其制造方法 |
CN111834462A (zh) * | 2018-06-28 | 2020-10-27 | 华为技术有限公司 | 一种半导体器件及制造方法 |
CN112838009A (zh) * | 2021-01-11 | 2021-05-25 | 广州粤芯半导体技术有限公司 | 屏蔽栅沟槽功率器件的制造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100223198B1 (ko) * | 1996-04-11 | 1999-10-15 | 다니구찌 이찌로오, 기타오카 다카시 | 높은 강복 전압을 갖는 반도체 장치 및 그 제조 방법 |
US6312993B1 (en) * | 2000-02-29 | 2001-11-06 | General Semiconductor, Inc. | High speed trench DMOS |
-
2006
- 2006-12-25 CN CN2006101713923A patent/CN101211965B/zh active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108493251A (zh) * | 2018-04-19 | 2018-09-04 | 张帅 | 屏蔽栅场效应晶体管及其制造方法 |
CN111834462A (zh) * | 2018-06-28 | 2020-10-27 | 华为技术有限公司 | 一种半导体器件及制造方法 |
CN111834462B (zh) * | 2018-06-28 | 2024-02-09 | 华为技术有限公司 | 一种半导体器件及制造方法 |
CN112838009A (zh) * | 2021-01-11 | 2021-05-25 | 广州粤芯半导体技术有限公司 | 屏蔽栅沟槽功率器件的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101211965B (zh) | 2011-06-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101950720B (zh) | 极度圆孔屏蔽的栅槽mosfet器件及其生产工艺 | |
US6498071B2 (en) | Manufacture of trench-gate semiconductor devices | |
US6172398B1 (en) | Trenched DMOS device provided with body-dopant redistribution-compensation region for preventing punch through and adjusting threshold voltage | |
EP1393362B1 (en) | Method of manufacturing a trench-gate semiconductor device | |
US6929988B2 (en) | Method of making an ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge | |
JP4388017B2 (ja) | 注入されたドレインドリフト領域および厚い底部酸化物を有するトレンチmis装置およびそれを製造するためのプロセス | |
US7579650B2 (en) | Termination design for deep source electrode MOSFET | |
JP5649597B2 (ja) | トレンチmisデバイスの終端領域の作製プロセスおよび、misデバイスを含む半導体ダイとその形成方法 | |
US6049104A (en) | MOSFET device to reduce gate-width without increasing JFET resistance | |
US20040121572A1 (en) | Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same | |
US9960237B2 (en) | Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET | |
US20010003367A1 (en) | Trenched dmos device with low gate charges | |
EP1386352A2 (en) | Trench-gate semiconductor devices and their manufacture | |
US7977192B2 (en) | Fabrication method of trenched metal-oxide-semiconductor device | |
CN101211965B (zh) | 极度圆孔屏蔽的栅槽mosfet器件及其生产工艺 | |
TW200304188A (en) | Semiconductor component and manufacturing method | |
TW201807823A (zh) | 斷閘極金氧半場效電晶體 | |
CN113594043A (zh) | 沟槽型mosfet器件及其制造方法 | |
CN101924104A (zh) | 金属氧化物半导体的结构及其制造方法 | |
EP4261894A1 (en) | Trench-gate semiconductor device and method for manufacturing the same | |
EP4033542A1 (en) | Trench-gate semiconductor device | |
KR20040065224A (ko) | 트렌치 게이트 반도체 디바이스 및 이의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20161010 Address after: 400700 Chongqing city Beibei district and high tech Industrial Park the road No. 5 of 407 Patentee after: Chongqing Wanguo Semiconductor Technology Co.,Ltd. Address before: Bermuda Hamilton No. 22 Vitoria street Canon hospital Patentee before: ALPHA & OMEGA SEMICONDUCTOR, Ltd. |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Excessive round-hole shielded gate trench (SGT) MOSFET devices and manufacturing processes Effective date of registration: 20191210 Granted publication date: 20110615 Pledgee: Chongqing Branch of China Development Bank Pledgor: Chongqing Wanguo Semiconductor Technology Co.,Ltd. Registration number: Y2019500000007 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20110615 Pledgee: Chongqing Branch of China Development Bank Pledgor: Chongqing Wanguo Semiconductor Technology Co.,Ltd. Registration number: Y2019500000007 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right |