CN108490217A - Contact mode micro-acceleration gauge - Google Patents
Contact mode micro-acceleration gauge Download PDFInfo
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- CN108490217A CN108490217A CN201810253047.7A CN201810253047A CN108490217A CN 108490217 A CN108490217 A CN 108490217A CN 201810253047 A CN201810253047 A CN 201810253047A CN 108490217 A CN108490217 A CN 108490217A
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- insulating layer
- thin plate
- acceleration
- moving electrode
- electrode
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
A kind of contact mode micro-acceleration gauge.It includes lower substrate, upper substrate, support column, thin plate and its several supporting beam and the anchor point of beam are equipped between lower substrate and upper substrate, the lower substrate, upper substrate are respectively equipped with upper and lower fixed electrode, the fixed electrode surface is covered with insulating layer, the upper and lower surface of the thin plate is respectively equipped with upper and lower moving electrode, the second working condition that the micro-acceleration gauge is contacted with the first working condition and thin plate that thin plate deforms with moving electrode stress but is not contacted with insulating layer with moving electrode stress deformation and with insulating layer.The present invention causes moving electrode deformation to work to change its principle of capacitance between fixed electrode using acceleration force.The present invention provides the support to bascule by the anti-stop of insulating layer, the short circuit of fixed electrode on fixed electrode, and by insulating layer, therefore can realize the measurement of high acceleration, and beam circular sheet composite structure can effectively inhibit the capacitance of sensor to be saturated.
Description
Technical field
The present invention relates to micro electro mechanical system field, more particularly to a kind of contact mode micro-acceleration gauge.
Background technology
Accelerometer is widely used in the various fields such as industry, military affairs, aviation, daily life.By operation principle, micro- acceleration
Degree meter can be divided into condenser type, pressure resistance type, piezoelectric type etc..Wherein, condenser type has many advantages, such as that low in energy consumption, response is fast, high sensitivity,
Its operation principle is：Variable capacitance is constituted by fixed electrode and moving electrode, wherein moving electrode be located in acceleration sensitive structure simultaneously because
Acceleration force is acted on and is moved, then by between the size of acceleration known to dynamic, capacitance fixed electrode measurement.Traditionally capacitance
Beam-mass block structure that the bascule of accelerometer that declines mainly uses comb structure or is made of beam and rigid block,
And it is generally acknowledged that the latter has higher sensitivity.Range using the capacitance microaccelerator of beam-mass block structure is main
It is influenced by two factors：When for anti-stop, the permitted mass block maximum displacement value of fixed electrode short circuit, i.e., dynamic, fixed electrode
Primary clearance, second is that the mechanical strength of beam-mass block structure.In recent years, it declines in another kind of Capacitive microsensor, that is, capacitance
In pressure sensor, it is proposed that a kind of operation principle based on contact mode：Insulating layer is covered on fixed electrode or on moving electrode,
To prevent the generation of inter-electrode short-circuit, and bear the thin plate to be deformed by measuring pressure（Film）Due to the effect of contact force
It is supported, so the range of sensor has obtained prodigious extension.In addition, part only phase that is dynamic, being in contact on fixed electrode
Every a very thin layer insulating, and the dielectric constant of insulating layer is generally vacuum or the several times of air, then according to capacitance and electricity
Clearance between poles be inversely proportional and it is directly proportional to dielectric constant known under contact mode interelectrode capacitance be improved, antinoise
Ability is thus also improved, and very high sensitivity can be realized in certain acceleration range.Under contact mode, capacitance
The thin plate to decline in pressure sensor occur because of pressure difference different deformations and thus have different connect between insulating layer
Contacting surface is accumulated, to realize the measurement to pressure.But for the capacitance microaccelerator using beam-mass block structure,
Since mass block is rigid structure, translational motion can only be done without deforming, the above contact mode cannot be directly applicable in.
In previous contact mode capacitance type sensor, capacitance saturation problem is an important factor for influencing sensitivity.Institute
Meaning capacitance saturation refers to after measured signal reaches certain value, and capacitance dynamic, between fixed electrode tends to stop variation.It causes this
One main cause of phenomenon is the increase with contact area, and remaining not deformed area is more next in the structure to deform
Smaller, rigidity is increasing, so that deformation is more and more difficult.For capacitance microaccelerator, according to contact
Pattern also needs to consider capacitance saturation problem.
In MEMS, scale effect leads to molecular separating force --- and Van der Waals force be can not ignore.The power is with intermolecular
The reduction of distance and increased dramatically.Under contact mode, there is the two intermolecular distance with insulating layer in moving electrode in larger area
Very small situation, therefore Van der Waals force is larger.In addition, the relative motion between moving electrode and insulating layer also results in the production of frictional force
It is raw.According to lot of documents include the document in relation to contact mode micropressure sensor it is found that Van der Waals force, frictional force can give sensing
Device causes significant hysteresis error（Hysterisis error）.For micro-acceleration gauge, measured signal often passes through within a very short time
Go through dynamic change from small to large again from big to small, then it is more sensitive to hysteresis error.
Invention content
In order to solve the problems in background technology, a kind of inhibition capacitance saturation of present invention offer and hysteresis error, there is height
The contact mode micro-acceleration gauge of range feature.
The technical solution adopted by the present invention to solve the technical problems is：A kind of contact mode micro-acceleration gauge, including：Under
Substrate, upper substrate are equipped with support column, thin plate and its several supporting beam and the anchor point of beam, under described between lower substrate and upper substrate
Substrate, upper substrate are equipped with fixed electrode, and the fixed electrode surface is covered with insulating layer, and the upper and lower surface of the thin plate is equipped with dynamic electricity
Pole, the micro-acceleration gauge have thin plate deform with moving electrode stress but the first working condition for not contacted with insulating layer and
The second working condition that thin plate is contacted with moving electrode stress deformation and with insulating layer.
The surface of insulating layer is equipped with several protrusions.
The thin plate is equipped with a large amount of through-holes.
The thin plate is circular sheet, constitutes bascule with the supporting beam, supporting beam is equal at the edge of circular sheet
Even distribution.
Moving electrode on the thin plate is identical as thin sheet form, and to be round, the fixed electrode in the upper and lower substrate is also corresponding
For circle.
Enter first working condition in the case of institute's measuring acceleration non-zero, circular sheet and moving electrode become
Shape.
Enter second working condition after institute's measuring acceleration value reaches threshold value, moving electrode connects with insulating layer
It touches, and contact area increases with the increase of acceleration.
Two moving electrodes on circular sheet constitute two with the fixed electrode being located in upper and lower substrate can power transformation
Hold, and variable differential capacitance is constituted by the two variable capacitances.The size reflection of variable differential capacitance by the size of measuring acceleration,
The positive negativity of variable differential capacitance reflects by the positive negativity in measuring acceleration direction.
The beneficial effects of the invention are as follows：By the anti-stop of insulating layer, the short circuit of fixed electrode on fixed electrode, and by exhausted
Edge layer provides the support to bascule, has the advantages that high range, can realize the measurement to high acceleration.In the present invention
Beam-circular sheet composite structure can effectively inhibit the capacitance of sensor to be saturated, and the protrusion on insulating layer can effectively reduce lag and miss
Difference.
Description of the drawings：
Fig. 1 is the sectional view of the embodiment of the present invention（Clearly to reflect the composition of device, in figure the ratio of each short transverse size with
Actual conditions differ greatly, similarly hereinafter）.
Fig. 2 is the sectional view in the structure of the invention in Fig. 1 directions A-A.
Fig. 3 is the sectional view in the structure of the invention in Fig. 1 directions B-B.
Fig. 4 is the cross-section diagram of insulating layer.
Specific implementation mode
Embodiments of the present invention is further illustrated below in conjunction with the accompanying drawings：
In the embodiment of the present invention, a kind of contact mode micro-acceleration gauge, including：Lower substrate 1, upper substrate 8, lower substrate 1 and upper base
Support column 12, thin plate 5 and its several supporting beam 6 and the anchor point 7 of beam are equipped between bottom 8, the lower substrate 1, upper substrate 8 are equipped with down
Fixed electrode 2 and upper fixed electrode 9,2 and 9 surface of the upper and lower fixed electrode have been covered each by lower insulating layer 3 and upper insulating layer 10, institute
The upper and lower surface for stating thin plate 5 is respectively equipped with lower moving electrode 4 and upper moving electrode 11, and there is the micro-acceleration gauge thin plate 5 to be moved with lower
Electrode 4, upper moving electrode 11 stress deformation but the first working condition for not contacted with lower insulating layer 3 or upper insulating layer 10 and thin simultaneously
Plate 5 and stress deformation and the second work contacted with lower insulating layer 3 or upper insulating layer 10 simultaneously of lower moving electrode 4, upper moving electrode 11
State.
Fixed electrode 2 and 9 constitutes two pairs of electrodes with moving electrode 4 and 11, and two moving electrodes are located on same deformable body concurrently
Raw identical deformation, therefore these two pair electrode constitutes variable differential capacitor.Whether the first working condition or the second work are in
Make state, by the size of measuring acceleration, the positive negativity of differential capacitance reflects by measuring acceleration direction for the size reflection of differential capacitance
Positive negativity, and differential capacitance structure be conducive to reduce common mode interference, improve the measuring accuracy of sensor.
The bascule of micro-acceleration gauge is made of thin plate 5 and supporting beam 6, and traditional beam-mass block structure is replaced with thin plate
Moving electrode is only capable of doing in rigid block in capacitance microaccelerator, with beam-mass block structure capacitance microaccelerator
Translational motion is different, and in the present invention, under load effect, thin plate and moving electrode attached thereto deform, in rising for range
Stage beginning, moving electrode are not contacted with the insulating layer being covered on fixed electrode, and micro-acceleration gauge is in the first working condition, when being surveyed
When acceleration is more than certain value, moving electrode is in contact with the insulating layer being covered on fixed electrode, and micro-acceleration gauge enters second
Working condition, and because the presence of the state greatly extends range.Under contact mode, beam does not connect with insulating layer
It touches, therefore even if in the case where moving electrode major part area is in contact with insulating layer, the remaining not deformed part of bascule
Rigidity it is still sufficiently small, then can effectively inhibit the appearance of capacitance saturated phenomenon.
Thin plate 5 uses circular configuration.Compared with rectangular slab, deformation and stress are more uniformly spread on plectane, are conducive to
The intensity for improving plate is conducive to the load that plate transmits same size to each supporting beam, therefore plectane is more suitable for high acceleration condition
Under measurement.Because thin plate is circle, moving electrode thereon and the fixed electrode in upper and lower substrate are covered also using circle
Shape.
Supporting beam is uniformly distributed on sheet edges and about thin plate central symmetry, each beam shape, size all same and with
Its their plate uniform thickness for being supported, and the number of beam is up to 36.Supporting beam can reduce poor rigidity between the two with plate uniform thickness
Not, processing technology while can also be simplified, by the adjustment to the number of beam, length, width, the global stiffness of changeable beam simultaneously ensures
Thin plate will not only make translational motion because rigidity is much larger than the global stiffness of beam.
There is a plurality of annular projection on the surface of insulating layer 3 and 10, to eliminate or reduce caused by Van der Waals force, frictional force
Hysteresis error.Since Van der Waals force and the cube of object gap size are inversely proportional, and capacitance only with electrode gap first power at
Inverse ratio, and it is molecular dimension rank that moving electrode, which contacts with each other the gap size of part with insulating layer, much smaller than between dynamic, fixed electrode
Distance（Not less than thickness of insulating layer）, so these protrusions can be substantially reduced Van der Waals force and be influenced on capacitance very little.
In addition, the presence of these protrusions can also reduce the friction between moving electrode and insulating layer, to reduce frictional force.
There are a large amount of through-holes on thin plate 5, plays a part of to reduce air damping.
Existing common micro-processing technology can be used in the processing of the present embodiment, such as：The activity being made of thin plate 5 and supporting beam 6
Structure can be machined in lower substrate 1 by sacrifice layer process, and the coupling part with lower substrate is anchor point 7；Upper substrate 8 can lead to
It crosses and is connected to lower substrate 1 with the welding of 1 upper support column 12 of lower substrate；Fixed electrode 2 and 9, insulating layer 3 and 10 and moving electrode 4
It can be completed by sputtering technology with 11；Raised, through-hole etc. on thin plate 5 shape, planar dimension and distribution on insulating layer 3 and 10
It flexible design and can be realized according to actual needs by the figure of mask plate position.
Every technical staff's notice：Although the present invention is described according to above-mentioned specific implementation mode, of the invention
Invention thought be not limited in the invention, any repacking with inventive concept will all be included in this patent protection of the patent right
In range.
Claims (8)
1. a kind of contact mode micro-acceleration gauge, including：Lower substrate（1）, upper substrate（8）, lower substrate（1）With upper substrate（8）It
Between be equipped with support column（12）, thin plate（5）With its several supporting beam（6）And its anchor point of beam（7）, it is characterised in that：The lower base
Bottom（1）, upper substrate（8）It is respectively equipped with lower fixed electrode（2）, upper fixed electrode（9）, the lower fixed electrode（2）, upper fixed electrode（9）Table
Face has been covered each by lower insulating layer（3）, upper insulating layer（10）, the thin plate（5）Upper and lower surface be respectively equipped with lower moving electrode
（4）, upper moving electrode（11）, the micro-acceleration gauge is with thin plate（5）With upper and lower moving electrode（4、11）Stress deforms simultaneously
But not with lower insulating layer（3）Or upper insulating layer（10）The first working condition and thin plate of contact（5）With upper and lower moving electrode（4、11）
Simultaneously stress deformation and with lower insulating layer（3）Or upper insulating layer（10）Second working condition of contact.
2. a kind of contact mode micro-acceleration gauge according to claim 1, it is characterised in that：The upper and lower insulating layer（3、
10）Surface is equipped with several protrusions.
3. a kind of contact mode micro-acceleration gauge according to claim 1, it is characterised in that：The thin plate（5）It is equipped with
Several through-holes.
4. a kind of contact mode micro-acceleration gauge according to claim 1 or 3, it is characterised in that：The thin plate（5）For circle
Shape thin plate, with the supporting beam（6）Constitute bascule, supporting beam（6）In circular sheet（5）Edge be uniformly distributed.
5. a kind of contact mode micro-acceleration gauge according to claim 4, it is characterised in that：The thin plate（5）On under,
Upper moving electrode（4、11）With thin plate（5）Shape is identical, for circle, the upper and lower substrate（1、8）On upper and lower fixed electrode（2、9）
Also it mutually should be round.
6. contact mode micro-acceleration gauge according to claim 1, it is characterized in that：In the case of institute's measuring acceleration non-zero
Enter first working condition, circular sheet（5）And upper and lower moving electrode（4、11）It deforms.
7. contact mode micro-acceleration gauge according to claim 1, it is characterized in that：After institute's measuring acceleration value reaches threshold value
Enter second working condition, lower moving electrode（4）Or upper moving electrode（11）With lower insulating layer（3）Or upper insulating layer（10）Hair
Raw contact, and contact area increases with the increase of acceleration.
8. contact mode micro-acceleration gauge according to claim 1, it is characterized in that：Positioned at circular sheet（5）On two
Moving electrode（4、11）With two fixed electrodes being located in upper and lower substrate（2、9）Two variable capacitances are constituted, and by the two
Variable capacitance constitutes variable differential capacitance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810253047.7A CN108490217B (en) | 2018-03-26 | 2018-03-26 | Contact mode micro-accelerometer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810253047.7A CN108490217B (en) | 2018-03-26 | 2018-03-26 | Contact mode micro-accelerometer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108490217A true CN108490217A (en) | 2018-09-04 |
| CN108490217B CN108490217B (en) | 2020-08-25 |
Family
ID=63337936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810253047.7A Active CN108490217B (en) | 2018-03-26 | 2018-03-26 | Contact mode micro-accelerometer |
Country Status (1)
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Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4638669A (en) * | 1985-05-07 | 1987-01-27 | Massachusetts Institute Of Technology | Quantum tunneling cantilever accelerometer |
| US5367429A (en) * | 1991-10-18 | 1994-11-22 | Hitachi, Ltd | Electrostatic type micro transducer and control system using the same |
| US5417312A (en) * | 1990-05-30 | 1995-05-23 | Hitachi, Ltd. | Semiconductor acceleration sensor and vehicle control system using the same |
| JPH08233855A (en) * | 1995-02-28 | 1996-09-13 | Kansai Gas Meter Co Ltd | Electrostatic capacity type acceleration sensor |
| CN1146823A (en) * | 1994-03-28 | 1997-04-02 | 利顿系统公司 | Electrode structure and method for anodically-bonded capacitive sensors |
| JPH11242052A (en) * | 1998-02-26 | 1999-09-07 | Denso Corp | Semiconductor acceleration sensor |
| JP2003057263A (en) * | 2001-08-09 | 2003-02-26 | Matsushita Electric Ind Co Ltd | Accelerometer and method of manufacturing the same |
| CN1721860A (en) * | 2004-04-05 | 2006-01-18 | 精工电子有限公司 | Capacitive dynamic quantity sensor and semiconductor device |
| JP2007057469A (en) * | 2005-08-26 | 2007-03-08 | Seiko Instruments Inc | Physical sensor and method of manufacturing same |
| CN101089625A (en) * | 2007-07-12 | 2007-12-19 | 上海交通大学 | Metal capacitance microaccelerator |
| CN101216498A (en) * | 2007-12-29 | 2008-07-09 | 紫光通讯科技有限公司 | Dual spindle differential capacitance type micromechanical accelerameter |
| JP2008196883A (en) * | 2007-02-09 | 2008-08-28 | Seiko Instruments Inc | Dynamic quantity sensor |
| CN101644718A (en) * | 2009-07-02 | 2010-02-10 | 中国科学院声学研究所 | Capacitive acceleration sensor with acoustic cavity |
| CN102507979A (en) * | 2011-11-02 | 2012-06-20 | 重庆理工大学 | Micro acceleration sensor of contact type capacitance |
| CN202512136U (en) * | 2012-03-22 | 2012-10-31 | 电子科技大学 | Capacitive acceleration sensor |
| JP5292600B2 (en) * | 2009-11-30 | 2013-09-18 | 三菱電機株式会社 | Acceleration sensor |
| CN107525948A (en) * | 2017-09-11 | 2017-12-29 | 浙江大学 | Contact-type frictional generating acceleration transducer |
-
2018
- 2018-03-26 CN CN201810253047.7A patent/CN108490217B/en active Active
Patent Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4638669A (en) * | 1985-05-07 | 1987-01-27 | Massachusetts Institute Of Technology | Quantum tunneling cantilever accelerometer |
| US5417312A (en) * | 1990-05-30 | 1995-05-23 | Hitachi, Ltd. | Semiconductor acceleration sensor and vehicle control system using the same |
| US5367429A (en) * | 1991-10-18 | 1994-11-22 | Hitachi, Ltd | Electrostatic type micro transducer and control system using the same |
| CN1146823A (en) * | 1994-03-28 | 1997-04-02 | 利顿系统公司 | Electrode structure and method for anodically-bonded capacitive sensors |
| JPH08233855A (en) * | 1995-02-28 | 1996-09-13 | Kansai Gas Meter Co Ltd | Electrostatic capacity type acceleration sensor |
| JPH11242052A (en) * | 1998-02-26 | 1999-09-07 | Denso Corp | Semiconductor acceleration sensor |
| JP2003057263A (en) * | 2001-08-09 | 2003-02-26 | Matsushita Electric Ind Co Ltd | Accelerometer and method of manufacturing the same |
| CN1721860A (en) * | 2004-04-05 | 2006-01-18 | 精工电子有限公司 | Capacitive dynamic quantity sensor and semiconductor device |
| JP2007057469A (en) * | 2005-08-26 | 2007-03-08 | Seiko Instruments Inc | Physical sensor and method of manufacturing same |
| JP2008196883A (en) * | 2007-02-09 | 2008-08-28 | Seiko Instruments Inc | Dynamic quantity sensor |
| CN101089625A (en) * | 2007-07-12 | 2007-12-19 | 上海交通大学 | Metal capacitance microaccelerator |
| CN101216498A (en) * | 2007-12-29 | 2008-07-09 | 紫光通讯科技有限公司 | Dual spindle differential capacitance type micromechanical accelerameter |
| CN101644718A (en) * | 2009-07-02 | 2010-02-10 | 中国科学院声学研究所 | Capacitive acceleration sensor with acoustic cavity |
| JP5292600B2 (en) * | 2009-11-30 | 2013-09-18 | 三菱電機株式会社 | Acceleration sensor |
| CN102507979A (en) * | 2011-11-02 | 2012-06-20 | 重庆理工大学 | Micro acceleration sensor of contact type capacitance |
| CN202512136U (en) * | 2012-03-22 | 2012-10-31 | 电子科技大学 | Capacitive acceleration sensor |
| CN107525948A (en) * | 2017-09-11 | 2017-12-29 | 浙江大学 | Contact-type frictional generating acceleration transducer |
Non-Patent Citations (2)
| Title |
|---|
| KHANDELWAL SIDDHARTHA 等: ""Novel methodology for estimating Initial Contact events from accelerometers positioned at different body locations"", 《GAIT & POSTURE》 * |
| 王烨: ""基于原子点接触的纳米力学加速度计"", 《CNKI》 * |
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| CN108490217B (en) | 2020-08-25 |
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