CN108475641A - 用于毫秒退火系统的预热方法 - Google Patents
用于毫秒退火系统的预热方法 Download PDFInfo
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- CN108475641A CN108475641A CN201780005290.0A CN201780005290A CN108475641A CN 108475641 A CN108475641 A CN 108475641A CN 201780005290 A CN201780005290 A CN 201780005290A CN 108475641 A CN108475641 A CN 108475641A
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- substrate
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- heat treatment
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- soaking period
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 58
- 238000000137 annealing Methods 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 108
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 238000001035 drying Methods 0.000 claims abstract description 43
- 238000002791 soaking Methods 0.000 claims abstract description 42
- 230000008569 process Effects 0.000 claims abstract description 40
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 46
- 239000007789 gas Substances 0.000 claims description 46
- 239000000126 substance Substances 0.000 claims description 26
- 229910052786 argon Inorganic materials 0.000 claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 18
- 230000007613 environmental effect Effects 0.000 claims description 16
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052805 deuterium Inorganic materials 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 229910021529 ammonia Inorganic materials 0.000 claims description 9
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 8
- 150000002431 hydrogen Chemical class 0.000 claims description 7
- 239000011229 interlayer Substances 0.000 claims description 7
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 claims 2
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 67
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 37
- 239000000463 material Substances 0.000 description 16
- 230000003647 oxidation Effects 0.000 description 13
- 238000001816 cooling Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- 229910052736 halogen Inorganic materials 0.000 description 8
- 150000002367 halogens Chemical class 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- -1 N2O and NO Chemical compound 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000003708 ampul Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000011149 active material Substances 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000010891 electric arc Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- OUUQCZGPVNCOIJ-UHFFFAOYSA-N hydroperoxyl Chemical compound O[O] OUUQCZGPVNCOIJ-UHFFFAOYSA-N 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 238000010583 slow cooling Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241001074085 Scophthalmus aquosus Species 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000012707 chemical precursor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005520 electrodynamics Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662289519P | 2016-02-01 | 2016-02-01 | |
US62/289,519 | 2016-02-01 | ||
PCT/US2017/015211 WO2017136222A1 (en) | 2016-02-01 | 2017-01-27 | Pre-heat processes for millisecond anneal system |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108475641A true CN108475641A (zh) | 2018-08-31 |
CN108475641B CN108475641B (zh) | 2022-07-29 |
Family
ID=59387058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201780005290.0A Active CN108475641B (zh) | 2016-02-01 | 2017-01-27 | 用于毫秒退火系统的预热方法 |
Country Status (6)
Country | Link |
---|---|
US (3) | US10262873B2 (zh) |
JP (1) | JP6563142B2 (zh) |
KR (2) | KR102193409B1 (zh) |
CN (1) | CN108475641B (zh) |
TW (1) | TWI688004B (zh) |
WO (1) | WO2017136222A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111106062A (zh) * | 2019-12-31 | 2020-05-05 | 华虹半导体(无锡)有限公司 | 脱气工艺方法和金属硬掩膜层的制造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI688004B (zh) | 2016-02-01 | 2020-03-11 | 美商瑪森科技公司 | 毫秒退火系統之預熱方法 |
JP6799960B2 (ja) * | 2016-07-25 | 2020-12-16 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP7304768B2 (ja) * | 2019-08-16 | 2023-07-07 | 株式会社Screenホールディングス | 熱処理装置および熱処理装置の洗浄方法 |
CN113471046B (zh) * | 2020-12-14 | 2023-06-20 | 北京屹唐半导体科技股份有限公司 | 具有等离子体处理系统和热处理系统的工件处理装置 |
Citations (8)
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US20030013280A1 (en) * | 2000-12-08 | 2003-01-16 | Hideo Yamanaka | Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device |
US20040058560A1 (en) * | 2002-09-20 | 2004-03-25 | Applied Materials, Inc. | Fast gas exchange for thermal conductivity modulation |
US20090181553A1 (en) * | 2008-01-11 | 2009-07-16 | Blake Koelmel | Apparatus and method of aligning and positioning a cold substrate on a hot surface |
US20090197428A1 (en) * | 2008-02-06 | 2009-08-06 | Kazuma Takahashi | Impurity-activating thermal process method and thermal process apparatus |
JP2010165733A (ja) * | 2009-01-13 | 2010-07-29 | Fujitsu Semiconductor Ltd | 熱処理方法、半導体装置の製造方法、及びフラッシュランプアニール装置 |
JP2011159713A (ja) * | 2010-01-29 | 2011-08-18 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
JP2011222747A (ja) * | 2010-04-09 | 2011-11-04 | Fujitsu Semiconductor Ltd | 半導体装置の設計方法及び製造方法 |
US20140335685A1 (en) * | 2011-07-15 | 2014-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of annealing after deposition of gate layers |
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JP2649611B2 (ja) * | 1990-12-14 | 1997-09-03 | 大日本スクリーン製造株式会社 | 半導体基板の熱処理方法 |
JP2855978B2 (ja) * | 1992-07-22 | 1999-02-10 | 日本電気株式会社 | 窒化シリコン膜の製造方法 |
US6204203B1 (en) | 1998-10-14 | 2001-03-20 | Applied Materials, Inc. | Post deposition treatment of dielectric films for interface control |
US6326692B1 (en) * | 2000-02-23 | 2001-12-04 | Advanced Micro Devices, Inc. | Insulating and capping structure with preservation of the low dielectric constant of the insulating layer |
US7442415B2 (en) | 2003-04-11 | 2008-10-28 | Sharp Laboratories Of America, Inc. | Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant films |
US8323754B2 (en) | 2004-05-21 | 2012-12-04 | Applied Materials, Inc. | Stabilization of high-k dielectric materials |
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JP2009164451A (ja) * | 2008-01-09 | 2009-07-23 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
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JP6084479B2 (ja) * | 2013-02-18 | 2017-02-22 | 株式会社Screenホールディングス | 熱処理方法、熱処理装置およびサセプター |
US9093468B2 (en) | 2013-03-13 | 2015-07-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Asymmetric cyclic depositon and etch process for epitaxial formation mechanisms of source and drain regions |
US20150140838A1 (en) | 2013-11-19 | 2015-05-21 | Intermolecular Inc. | Two Step Deposition of High-k Gate Dielectric Materials |
TWI688004B (zh) * | 2016-02-01 | 2020-03-11 | 美商瑪森科技公司 | 毫秒退火系統之預熱方法 |
-
2017
- 2017-01-25 TW TW106102886A patent/TWI688004B/zh active
- 2017-01-27 CN CN201780005290.0A patent/CN108475641B/zh active Active
- 2017-01-27 JP JP2018533755A patent/JP6563142B2/ja active Active
- 2017-01-27 US US15/417,470 patent/US10262873B2/en active Active
- 2017-01-27 KR KR1020187017228A patent/KR102193409B1/ko active IP Right Grant
- 2017-01-27 KR KR1020207035332A patent/KR102245732B1/ko active IP Right Grant
- 2017-01-27 WO PCT/US2017/015211 patent/WO2017136222A1/en active Application Filing
-
2019
- 2019-03-26 US US16/364,568 patent/US10679864B2/en active Active
-
2020
- 2020-06-05 US US16/893,515 patent/US11101142B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030013280A1 (en) * | 2000-12-08 | 2003-01-16 | Hideo Yamanaka | Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device |
US20040058560A1 (en) * | 2002-09-20 | 2004-03-25 | Applied Materials, Inc. | Fast gas exchange for thermal conductivity modulation |
US20090181553A1 (en) * | 2008-01-11 | 2009-07-16 | Blake Koelmel | Apparatus and method of aligning and positioning a cold substrate on a hot surface |
US20100279516A1 (en) * | 2008-01-11 | 2010-11-04 | Chen-An Chen | Apparatus and method of aligning and positioning a cold substrate on a hot surface |
US20090197428A1 (en) * | 2008-02-06 | 2009-08-06 | Kazuma Takahashi | Impurity-activating thermal process method and thermal process apparatus |
JP2010165733A (ja) * | 2009-01-13 | 2010-07-29 | Fujitsu Semiconductor Ltd | 熱処理方法、半導体装置の製造方法、及びフラッシュランプアニール装置 |
JP2011159713A (ja) * | 2010-01-29 | 2011-08-18 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
JP2011222747A (ja) * | 2010-04-09 | 2011-11-04 | Fujitsu Semiconductor Ltd | 半導体装置の設計方法及び製造方法 |
US20140335685A1 (en) * | 2011-07-15 | 2014-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of annealing after deposition of gate layers |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111106062A (zh) * | 2019-12-31 | 2020-05-05 | 华虹半导体(无锡)有限公司 | 脱气工艺方法和金属硬掩膜层的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR102245732B1 (ko) | 2021-04-29 |
TWI688004B (zh) | 2020-03-11 |
CN108475641B (zh) | 2022-07-29 |
JP6563142B2 (ja) | 2019-08-21 |
US11101142B2 (en) | 2021-08-24 |
US20170221722A1 (en) | 2017-08-03 |
KR102193409B1 (ko) | 2020-12-23 |
US20190221442A1 (en) | 2019-07-18 |
KR20200142099A (ko) | 2020-12-21 |
KR20180072846A (ko) | 2018-06-29 |
US20200303206A1 (en) | 2020-09-24 |
TW201729296A (zh) | 2017-08-16 |
US10679864B2 (en) | 2020-06-09 |
US10262873B2 (en) | 2019-04-16 |
JP2019505988A (ja) | 2019-02-28 |
WO2017136222A1 (en) | 2017-08-10 |
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