CN108471680A - A kind of hole metallization technique of wiring board - Google Patents
A kind of hole metallization technique of wiring board Download PDFInfo
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- CN108471680A CN108471680A CN201810462184.1A CN201810462184A CN108471680A CN 108471680 A CN108471680 A CN 108471680A CN 201810462184 A CN201810462184 A CN 201810462184A CN 108471680 A CN108471680 A CN 108471680A
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- Prior art keywords
- wiring board
- hole metallization
- further preferably
- temperature
- copper
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
Abstract
The present invention provides a kind of hole metallization technique of wiring board, the hole metallization technique is chemical-copper-plating process or directly electroplating technology, is included in before oil removing, is toasted to wiring board.The chemical-copper-plating process includes the following steps：Desmearing, baking, oil removing, microetch, preimpregnation, activation, activating and reducing/speedization and electroless copper are carried out to wiring board successively.Hole metallization technique provided by the invention can effectively avoid wiring board hole wall that plating leakage phenomenon occurs, improve the bond strength between conductive material and hole wall, prevent the two from detaching, it is only necessary to which a hole metallization and primary plating can be such that hole wall is completely covered, and reduce the process needed for hole metallization.
Description
Technical field
The invention belongs to wiring board production technical fields, and in particular to a kind of hole metallization technique of wiring board.
Background technology
Wiring board is the key that integrated circuit, and the batch production and optimization electrical appliance for permanent circuit have been laid out important work
With.According to the number of plies, wiring board can be divided into single sided board, dual platen and multilayer circuit board three classes.Wherein, dual platen and multilayer circuit board
Circuit be distributed in different interlayers, it is therefore desirable to the circuit between different layers is connected using hole.But due to the base of wiring board
Material is mostly the high molecular materials such as nonconducting polyester, epoxy resin, and when printed wiring is electroplated, hole wall can not be coated with metal,
Therefore it also needs to carry out metalized to hole wall, it can be conductive.
Hole metallization refers to adhering to layer of conductive material on assist side hole wall.Such as first chemical plating a thin layer copper, then
It is electroplated again；Or one layer of conductive carbon film, macromolecule conductive film or palladium conductive layer are first formed on hole wall by other methods,
It is electroplated again.Wherein, the latter is also referred to as direct galvanoplastic.But traditional hole metallization technique is intractable for some
It when wiring board, is not easy to make above-mentioned conductive material that wiring board hole wall be completely covered, on hole wall, especially be tied between each layer of wiring board
There are plating leakage phenomenons at conjunction；Moreover, follow-up combine loosely between electro-coppering and hole wall, it is easy to happen separation.It is above-mentioned in order to solve
Problem, it will usually secondary hole metallization and second time electroplating be carried out to wiring board, even if so, it is also difficult to hole wall be made to be covered completely
Lid.
Moreover, with the fast development of high frequency signal transmission technology, the demand of HF link plate also increasingly increases.For life
Output HF link plate, most manufacturers are replaced using PTFE (polytetrafluoroethylene (PTFE)) substrates or the substitution of other high frequency resin sheets or part
Conventional resins piece (such as epoxy sheet).However, the surfaces PTFE are smooth, friction coefficient is small, when as circuit board substrate, above-mentioned leakage
The problem of plating and electro-coppering are detached with hole wall is more serious.
Therefore, wiring board, the especially plating leakage of HF link plate hole wall how are avoided, electro-coppering is improved and the combination of hole wall is strong
Degree, is this field urgent problem to be solved.
Invention content
In view of the deficiencies of the prior art, the present invention intends to provide a kind of hole metallization technique of wiring board,
The technique can effectively avoid wiring board hole wall that plating leakage phenomenon occurs, and improve the bond strength between conductive material and hole wall, reduce
Hole metallization process.
For this purpose, the present invention uses following technical scheme：
The present invention provides a kind of hole metallization technique of wiring board, including operates as follows：
Before oil removing, wiring board is toasted.
Oil removing is also referred to as whole hole, it is therefore an objective to and plate face greasy dirt or other impurities are cleaned, while wiring board hole wall being made to carry electropositive,
Contribute to the absorption of activating substance or conductive materials in subsequent step.The present invention is by drying wiring board before oil removing
The problem of baking, can significantly improve following electroplating process middle hole wall plating leakage, and the bond strength between conductive material and hole wall is improved,
It only needs a hole metallization and primary plating hole wall can be made to be completely covered, reduces the process needed for hole metallization.
As the preferred technical solution of the present invention, it is small to terminate the time completed to the hole metallization technique from the baking
In equal to for 24 hours, for example, can be for 24 hours, 21h, 18h, 15h, 12h, 10h, 9h, 8h, 7h, 6h, 5h, 4h, 3h or 2h etc.；Preferably
Less than or equal to 12h.
If it should be noted that after baking without subsequent operation, toasts the improvement for plating leakage phenomenon and make
Weakened with the extension of wiring board standing time with meeting, therefore the subsequent operation time after baking should be shortened.
Preferably, the temperature of the baking is 100-150 DEG C, for example, can be 100 DEG C, 102 DEG C, 105 DEG C, 108 DEG C,
110℃、112℃、115℃、118℃、120℃、121℃、122℃、123℃、124℃、125℃、126℃、127℃、128
DEG C, 129 DEG C, 130 DEG C, 132 DEG C, 135 DEG C, 138 DEG C, 140 DEG C, 142 DEG C, 145 DEG C, 148 DEG C or 150 DEG C etc.；Further preferably
It is 120-130 DEG C.
Preferably, the time of the baking be 20min-5h, such as can be 20min, 25min, 30min, 35min,
40min、45min、50min、55min、1h、1.2h、1.5h、1.8h、2h、2.2h、2.5h、2.8h、3h、3.2h、3.5h、
3.8h, 4h, 4.2h, 4.5h, 4.8h or 5h；Further preferably 2-4h.
As the preferred technical solution of the present invention, the hole metallization technique is chemical-copper-plating process or direct galvanizer
Skill.
In one embodiment of the invention, the hole metallization technique can be chemical-copper-plating process, specifically include
Following steps：The wiring board is toasted successively, oil removing, microetch, activation, activating and reducing/speedization and electroless copper.
Preferably, the directly electroplating technology is carbon pores chemical industry skill or formation conductive polymer membrane process.
As the preferred technical solution of the present invention, the chemical-copper-plating process further includes：To described before the baking
Wiring board carries out plasma cleaning desmearing or liquid medicine desmearing.
The purpose of desmearing is to remove the brill dirt remained in because of drilling on hole wall, and hole wall is made to be formed with certain roughness
Surface, be conducive to improve hole wall and conductive material binding force.
Preferably, the gas that the plasma cleaning desmearing uses is in oxygen, nitrogen, carbon tetrafluoride or argon gas
It is a kind of or at least two combination.
Preferably, the pressure of the plasma cleaning desmearing is 0.1-0.25torr；Such as can be 0.1torr,
0.11torr、0.12torr、0.13torr、0.14torr、0.15torr、0.16torr、0.17torr、0.18torr、
0.19torr, 0.2torr, 0.21torr, 0.22torr, 0.23torr, 0.24torr or 0.25torr etc..
Preferably, the temperature of the plasma cleaning desmearing is 70-100 DEG C, for example, can be 70 DEG C, 72 DEG C, 75 DEG C,
76 DEG C, 77 DEG C, 78 DEG C, 79 DEG C, 80 DEG C, 81 DEG C, 82 DEG C, 83 DEG C, 84 DEG C, 85 DEG C, 88 DEG C, 90 DEG C, 92 DEG C, 95 DEG C, 98 DEG C or
100 DEG C etc.；Further preferably 75-85 DEG C；More preferably 80 DEG C.
Preferably, the time of the plasma cleaning desmearing be 5-60min, such as can be 5min, 10min,
15min, 20min, 25min, 30min, 35min, 40min, 45min, 50min, 55min or 60min etc.；Further preferably
20-30min。
Preferably, the liquid medicine desmearing includes the following steps：The wiring board is expanded successively, sting erosion and in
With.
Preferably, the time of the expansion be 1-10min, such as can be 1min, 2min, 3min, 4min, 5min,
6min, 7min, 8min, 9min or 10min etc.；Further preferably 3-8min.
Preferably, the temperature of the expansion is 50-80 DEG C, for example, can be 50 DEG C, 52 DEG C, 53 DEG C, 55 DEG C, 56 DEG C, 58
DEG C, 60 DEG C, 62 DEG C, 63 DEG C, 65 DEG C, 66 DEG C, 68 DEG C, 70 DEG C, 72 DEG C, 73 DEG C, 75 DEG C, 76 DEG C, 78 DEG C or 80 DEG C etc.；Further
Preferably 60-70 DEG C.
Preferably, the time for stinging erosion be 0.5-5min, such as can be 0.5min, 1min, 1.5min, 2min,
2.5min, 3min, 3.5min, 4min, 4.5min or 5min etc.；Further preferably 1-3min.
Preferably, the temperature for stinging erosion is 70-90 DEG C, for example, can be 70 DEG C, 71 DEG C, 72 DEG C, 73 DEG C, 74 DEG C, 75
DEG C, 76 DEG C, 77 DEG C, 78 DEG C, 79 DEG C, 80 DEG C, 81 DEG C, 82 DEG C, 83 DEG C, 84 DEG C, 85 DEG C, 86 DEG C, 87 DEG C, 88 DEG C, 89 DEG C or 90
DEG C etc.；Further preferably 75-85 DEG C.
Preferably, the time of the neutralization be 0.5-3min, such as can be 0.5min, 1min, 1.5min, 2min,
2.5min or 3min etc.；Further preferably 1-2min.
Preferably, the temperature of the neutralization is 20-50 DEG C, for example, can be 20 DEG C, 22 DEG C, 23 DEG C, 25 DEG C, 26 DEG C, 28
DEG C, 30 DEG C, 32 DEG C, 33 DEG C, 35 DEG C, 36 DEG C, 38 DEG C, 40 DEG C, 42 DEG C, 43 DEG C, 45 DEG C, 46 DEG C, 48 DEG C or 50 DEG C etc.；Further
Preferably 30-40 DEG C.
As the preferred technical solution of the present invention, the oil removing is carried out with degreasing fluid, and the temperature of the oil removing is 25-70
℃。
When preferably, using chemical-copper-plating process, the temperature of the oil removing is 40-60 DEG C, for example, can be 40 DEG C, 41
℃、42℃、43℃、44℃、45℃、46℃、47℃、48℃、49℃、50℃、51℃、52℃、53℃、54℃、55℃、56
DEG C, 57 DEG C, 58 DEG C, 59 DEG C or 60 DEG C etc.；Further preferably 45-55 DEG C.
When preferably, using carbon pores chemical industry skill, the temperature of the oil removing is 25-35 DEG C.
When preferably, using conductive polymer membrane process is formed, the temperature of the oil removing is 60-70 DEG C.
Preferably, the time of the oil removing be 30-150s, such as can be 30s, 35s, 40s, 45s, 50s, 55s, 60s,
65s、70s、75s、80s、85s、90s、95s、100s、105s、110s、115s、120s、125s、130s、135s、140s、145s
Or 150s etc.；Further preferably 60-100s.
As the preferred technical solution of the present invention, micro-corrosion liquid that the microetch uses for sulfuric acid-sodium peroxydisulfate micro-corrosion liquid or
Sulfuric acid-hydrogen peroxide microetchant.
Preferably, the microetch amount of the microetch is 0.3-1.5 μm；Such as can be 0.3 μm, 0.4 μm, 0.5 μm, 0.6 μm,
0.7 μm, 0.8 μm, 0.9 μm, 1 μm, 1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm or 1.5 μm etc..
Preferably, the temperature of the microetch is 25-35 DEG C；Such as can be 25 DEG C, 26 DEG C, 27 DEG C, 28 DEG C, 29 DEG C, 30
DEG C, 31 DEG C, 32 DEG C, 33 DEG C, 34 DEG C or 35 DEG C etc..
Preferably, the time of the microetch is 30-120s；Such as can be 30s, 35s, 40s, 45s, 50s, 55s, 60s,
65s, 70s, 75s, 80s, 85s, 90s, 95s, 100s, 105s, 110s, 115s or 120s etc..
As the preferred technical solution of the present invention, the chemical-copper-plating process further includes：Between the microetch and activation,
The wiring board is presoaked.
Preferably, the preimpregnation is carried out with prepreg solution, and the temperature of the preimpregnation is 18-30 DEG C；Such as can be 18 DEG C,
19 DEG C, 20 DEG C, 21 DEG C, 22 DEG C, 23 DEG C, 24 DEG C, 25 DEG C, 26 DEG C, 27 DEG C, 28 DEG C, 29 DEG C or 30 DEG C etc..
Preferably, the time of the preimpregnation is 10-60s；Such as can be 10s, 15s, 20s, 25s, 30s, 35s, 40s,
45s, 50s, 55s or 60s etc..
As the preferred technical solution of the present invention, the activating solution used that activates is lived for ionic palladium activating solution or colloid palladium
Change liquid.
Preferably, the temperature of the activation is 35-60 DEG C, for example, can be 35 DEG C, 36 DEG C, 37 DEG C, 38 DEG C, 39 DEG C, 40
℃、41℃、42℃、43℃、44℃、45℃、46℃、47℃、48℃、49℃、50℃、51℃、52℃、53℃、54℃、55
DEG C, 56 DEG C, 57 DEG C, 58 DEG C, 59 DEG C or 60 DEG C etc.；Further preferably 45-55 DEG C.
Preferably, the time of the activation be 30-120s, such as can be 30s, 35s, 40s, 45s, 50s, 55s, 60s,
65s, 70s, 75s, 80s, 85s, 90s, 95s, 100s, 105s, 110s, 115s or 120s etc.；Further preferably 50-80s.
Preferably, in the ionic palladium activating solution palladium content be 50-200ppm, such as can be 50ppm, 55ppm,
60ppm、65ppm、70ppm、75ppm、80ppm、85ppm、90ppm、95ppm、100ppm、105ppm、110ppm、115ppm、
120ppm、125ppm、130ppm、135ppm、140ppm、145ppm、150ppm、160ppm、170ppm、180ppm、190ppm
Or 200ppm etc.；Further preferably 100-150ppm.
Preferably, in the colloidal pd activation solution palladium content be 15-90ppm, such as can be 15ppm, 18ppm,
20ppm、21ppm、22ppm、23ppm、24ppm、25ppm、26ppm、27ppm、28ppm、29ppm、30ppm、35ppm、
40ppm, 45ppm, 50ppm, 55ppm, 60ppm, 65ppm, 70ppm, 75ppm, 80ppm, 85ppm or 90ppm etc.；It is further excellent
It is selected as 20-30ppm.
As the preferred technical solution of the present invention, the temperature of the activating and reducing/speedization is 30-40 DEG C；Such as can be
30 DEG C, 31 DEG C, 32 DEG C, 33 DEG C, 34 DEG C, 35 DEG C, 36 DEG C, 37 DEG C, 38 DEG C, 39 DEG C or 40 DEG C etc..
Preferably, the time of the activating and reducing/speedization be 20-90s, such as can be 20s, 25s, 30s, 35s, 40s,
42s, 45s, 48s, 50s, 52s, 55s, 58s, 60s, 65s, 70s, 75s, 80s, 85s or 90s etc.；Further preferably 40-
60s。
It should be noted that heretofore described " activating and reducing/speedization " refers to activating and reducing or speedization.Work as activation act
Then it is activating and reducing when middle use ionic palladium activating solution；When in activation act use colloidal pd activation solution when, then for speedization (
Claim dispergation).
As the preferred technical solution of the present invention, the temperature of the electroless copper is 28-40 DEG C, such as can be 28 DEG C,
29 DEG C, 30 DEG C, 31 DEG C, 32 DEG C, 33 DEG C, 34 DEG C, 35 DEG C, 36 DEG C, 37 DEG C, 38 DEG C, 39 DEG C or 40 DEG C etc.；Preferably 30-37 DEG C.
Preferably, the time of the electroless copper is 3-20min；Such as can be 3min, 4min, 5min, 6min,
7min, 8min, 9min, 10min, 11min, 12min, 13min, 14min, 15min, 16min, 17min, 18min, 19min or
20min etc..
In another embodiment of the present invention, the hole metallization technique can be directly electroplating technology, such as carbon pores
Technique forms conductive polymer membrane process.
Wherein, carbon pores chemical industry skill includes the following steps：Successively to the wiring board carry out optionally desmearing, toast, remove
Oil and carbon pores.
Conductive polymer membrane process is formed to include the following steps：Optionally desmearing, baking are carried out to the wiring board successively
Roasting, oil removing, oxidation and film forming.
Compared with prior art, the invention has the advantages that：
The present invention can significantly improve the leakage of following electroplating process middle hole wall by being toasted to wiring board before oil removing
The problem of plating, and the bond strength between conductive material and hole wall is improved, prevent the two from detaching, it is only necessary to a hole metallization and one
Secondary plating can be such that hole wall is completely covered, and reduce the process needed for hole metallization.
Description of the drawings
Fig. 1 is the hole backlight photo for the HF link plate that embodiment 1 obtains；
Fig. 2 is that the HF link plate that embodiment 1 obtains carries out the Metallograph after electric plating of whole board and thermal shock；
Fig. 3 is the hole backlight photo for the HF link plate that comparative example 1 obtains；
Fig. 4 is that the HF link plate that comparative example 1 obtains carries out the Metallograph after electric plating of whole board and thermal shock；
Fig. 5 is the hole backlight photo for the HF link plate that comparative example 2 obtains；
Fig. 6 is the hole backlight photo for the wiring board that embodiment 2 obtains；
Fig. 7 is that the wiring board that embodiment 2 obtains carries out the Metallograph after electric plating of whole board and thermal shock.
Specific implementation mode
Technical solution to further illustrate the present invention below with reference to the accompanying drawings and specific embodiments.Art technology
Personnel understand the present invention it will be clearly understood that the specific implementation mode is only to aid in, and should not be regarded as a specific limitation of the invention.
Rule of origin/the ingredient used in following embodiments is as follows：
Wiring board is provided by circuit board plant, and completes drilling operating by circuit board plant.
Inflation fluid SkySecure 302：Raw material is the SkySecure 302S of SkyChem companies, and it is 150mL/ to open cylinder amount
L；
Sting erosion liquid SkySecure 305：Raw material is the SkySecure 305P of SkyChem companies, and it is 125mL/ to open cylinder amount
L separately adds 32%NaOH solution 105mL/L；
Neutralizer SkySecure 310：Raw material is the SkySecure 310C of SkyChem companies, and it is 25mL/L to open cylinder amount,
Separately add 50%w/w H2SO4100mL/L and 35%w/w H2O215mL/L；
Chemical-copper-plating process degreasing fluid SkyClean 321：Raw material is the degreaser SkyClean of SkyChem companies
321C, it is 40mL/L to open cylinder amount；
Carbon pores chemical industry skill degreasing fluid SkyCarbon 383：Raw material is the SkyCarbon 383C of SkyChem companies, opens cylinder
Amount is 100mL/L；
Form conducting polymer membrane process degreasing fluid SkyPoly 391：The degreaser SkyPoly391C of SkyChem companies,
It is 65mL/L to open cylinder amount；
Micro-corrosion liquid：100g/L sodium peroxydisulfate+50g/L sulfuric acid；
Prepreg solution SkyCat 330：Raw material is the SkyCat 330C of SkyChem companies, and it is 10mL/L to open cylinder amount；
Ionic palladium activating solution SkyCat 335：Palladium ion concentration 100ppm, raw material are the SkyCat of SkyChem companies
335C, it is 200mL/L to open cylinder amount；
Activating and reducing liquid SkyCat 336：Raw material is the SkyCat 336R of SkyChem companies, and it is 10mL/L to open cylinder amount；
Chemical bronze plating liquid SkyCopp 365：Raw material is SkyCopp 365B of SkyChem companies, SkyCopp365C,
SkyCopp 365S and SkyCopp 300R, opening cylinder concentration is respectively：SkyCopp 365B are 100mL/L, SkyCopp 365C
It is 3.0mL/L for 80mL/L, SkyCopp 365S, SkyCopp 300R are 15mL/L；
Carbonaceous conductive liquid SkyCarbon 385：Raw material is the SkyCarbon 385C of SkyChem companies, and opening cylinder amount is
300mL/L；
Oxidation solution SkyPoly 393：Raw material is the SkyPoly 393C of SkyChem companies, and it is 220mL/L to open cylinder amount, is used
It is 6.0~7.0 that boric acid, which adjusts pH value,；
At film liquid SkyPoly 396：Raw material is SkyPoly 396B, 396A and the 396M of SkyChem companies, opens cylinder concentration
Respectively, 396B 20mL/L, 396A 30mL/L, 396M 20mL/L；
Copper electroplating liquid SkyPlate Cu616：Raw material is SkyPlate Cu616A, the SkyPlate of SkyChem companies
Cu616L and cupric sulfate pentahydrate, 98%w/w sulfuric acid and sodium chloride, opening cylinder concentration is respectively, cupric sulfate pentahydrate 70g/L,
98%w/w sulfuric acid is 202g/L, sodium chloride 0.1g/L.
Embodiment 1
The present embodiment provides a kind of chemical-copper-plating process of HF link plate, include the following steps：
(1) desmearing：The HF link plate of 6cm × 10cm after one piece of drilling is placed in plasma cleaning instrument, is heated up
To 80 DEG C, it is evacuated to 0.1torr, the mixed gas of oxygen, nitrogen and argon gas is introduced, so that pressure is remained 0.25torr, clearly
Wash 20min；
(2) it toasts：By step (1), treated that HF link plate is placed in 120 DEG C of baking ovens toasts 2h；
(3) oil removing：Step (2) treated HF link plate is immersed in 50 DEG C of degreasing fluid SkyClean 321, oil removing
Then 90s rinses 1min with deionized water；
(4) microetch：Step (3) treated HF link plate is immersed in 28 DEG C of micro-corrosion liquids, then microetch 60s is spent
Ionized water rinses 1min；
(5) it presoaks：Step (4) treated HF link plate is immersed in 28 DEG C of prepreg solution SkyCat 330, preimpregnation
20s；
(6) it activates：Step (5) treated HF link plate is immersed in 50 DEG C of ionic palladium activating solution SkyCat335, it is living
Change 60s, then rinses 1min with deionized water；
(7) activating and reducing：Step (6) treated HF link plate is immersed in 35 DEG C of activating and reducing liquid SkyCat336,
Then activating and reducing 40s rinses 1min with deionized water；
(8) electroless copper：Step (7) treated HF link plate is immersed into 34 DEG C of chemical bronze plating liquid SkyCopp 365
In, then copper facing 6min rinses 1min, hot blast drying with deionized water.
The HF link plate that above-mentioned chemical-copper-plating process is handled is fabricated to backlight to be sliced, peep hole backlight situation,
The results are shown in Figure 1, and backlight series is at 9 grades or more.
Oil removing and pickling are carried out to the HF link plate that above-mentioned chemical-copper-plating process is handled, are then immersed in copper electroplating liquid
In SkyPlate Cu616, control current density is 2.0ASD, and electro-coppering 50min obtains the printed wiring board of electric plating of whole board.So
The printed wiring board is cut into the fritter of 3cm × 3cm afterwards, is placed in 150 DEG C of baking ovens after baking 4h, carries out thermal shock reliability
Test.Thermal shock method is：Model is clamped with long handle tweezers, immerses and keeps 10s in 288 DEG C of tin stoves, taking-up is cooled to room temperature, instead
Multiple wicking 6 times, completes thermal shock.Slice is made after thermal shock, with copper facing situation in metallographic microscope peep hole, as a result such as Fig. 2
It is shown.The results show that hole wall copper facing is complete, electro-coppering and hole wall are without detaching.
Comparative example 1
Difference lies in omit step (2), directly treated after HF link plate carries out with step (1) with embodiment 1
Continuous processing.
The HF link plate that the processing of comparative example 1 obtains is fabricated to backlight to be sliced, backlight situation in peep hole, as a result as schemed
Shown in 3, backlight series is 7 grades.
The HF link plate electric plating of whole board that the processing of comparative example 1 is obtained, then carries out thermal shock reliability test, uses metallographic
Copper facing situation in microscope peep hole, the results are shown in Figure 4, and hole wall has apparent plating leakage phenomenon.
According to the result of embodiment 1 and comparative example 1 it is found that hole metallization technique provided by the invention can significantly improve height
The problem of frequency circuit board electroplating process middle hole wall plating leakage.
Comparative example 2
Difference lies in the HF link plate after toasting step (2) is placed at room temperature for 25h, then after carrying out with embodiment 1
Continuous operation.
The HF link plate that the processing of comparative example 2 obtains is fabricated to backlight to be sliced, backlight situation in peep hole, as a result as schemed
Shown in 5, backlight series is 7 grades.
Embodiment 2
The present embodiment provides a kind of chemical-copper-plating process of wiring board hole metallization, include the following steps：
(1) liquid medicine desmearing：Wiring board after drilling is expanded successively, stings erosion and neutralization, the specific method is as follows；
Expansion：Wiring board is placed in 65 DEG C of inflation fluid SkySecure 302, then expansion process 5min uses deionization
Water rinses 1min；
Sting erosion：Wiring board after expansion is placed in 80 DEG C sting to lose in liquid SkySecure 305, stings erosion processing 2min, so
Afterwards 1min is rinsed with deionized water；
It neutralizes：The wiring board stung after losing is placed in 30 DEG C of neutralizer SkySecure 310, neutralisation treatment 1min, so
Afterwards 1.5min is rinsed with deionized water；
(2) it toasts：By step (1), treated that wiring board is placed in 130 DEG C of baking ovens toasts 2.5h；
(3) oil removing：Step (2) treated wiring board is immersed in 45 DEG C of degreasing fluid SkyClean 321,100s is handled,
Then 1min is rinsed with deionized water；
(4) microetch：Step (3) treated wiring board is immersed in 35 DEG C of micro-corrosion liquids, then microetch 30s uses deionization
Water rinses 1min；
(5) it presoaks：Step (4) treated wiring board is immersed in 18 DEG C of prepreg solution SkyCat 330,60s is presoaked；
(6) it activates：Step (5) treated wiring board is immersed in 55 DEG C of ionic palladium activating solution SkyCat 335, activation
Then 50s rinses 1min with deionized water；
(7) activating and reducing：Step (6) treated wiring board is immersed in 30 DEG C of activating and reducing agent SkyCat336, activation
60s is restored, then rinses 1min with deionized water；
(8) electroless copper：Step (7) treated wiring board is immersed in 30 DEG C of chemical bronze plating liquid SkyCopp365, plating
Then copper 20min rinses 1min, hot blast drying with deionized water.
The wiring board that above-mentioned chemical-copper-plating process is handled is fabricated to backlight to be sliced, peep hole backlight situation, as a result
As shown in fig. 6, its backlight series is at 9 grades or more.
Then the wiring board electric plating of whole board that above-mentioned chemical-copper-plating process is handled carries out thermal shock reliability test,
With copper facing situation in metallographic microscope peep hole, the results are shown in Figure 7, and hole wall copper facing is complete, and electro-coppering and hole wall are without detaching.
Embodiment 3
The present embodiment provides a kind of chemical-copper-plating process of HF link plate, include the following steps：
(1) liquid medicine desmearing：With embodiment 2；
(2) it toasts：By step (1), treated that HF link plate is placed in 100 DEG C of baking ovens toasts 5h；
(3) oil removing：Step (2) treated HF link plate is immersed in 40 DEG C of degreasing fluid SkyClean 321, processing
Then 150s rinses 1min with deionized water；
(4) microetch：Step (3) treated HF link plate is immersed in 30 DEG C of micro-corrosion liquids, then microetch 45s is spent
Ionized water rinses 1min；
(5) it presoaks：Step (4) treated HF link plate is immersed in 25 DEG C of prepreg solution SkyCat 330, preimpregnation
30s；
(6) it activates：Step (5) treated HF link plate is immersed in 35 DEG C of ionic palladium activating solution SkyCat335, it is living
Change 120s, then rinses 1min with deionized water；
(7) activating and reducing：Step (6) treated HF link plate is immersed in 33 DEG C of activating and reducing agent SkyCat336,
Then activating and reducing 80s rinses 1min with deionized water；
(8) electroless copper：Step (7) treated HF link plate is immersed into 35 DEG C of chemical bronze plating liquid SkyCopp 365
In, then copper facing 5min rinses 1min, hot blast drying with deionized water.
The HF link plate that above-mentioned chemical-copper-plating process is handled is fabricated to backlight to be sliced, peep hole backlight situation,
The results show that its backlight series is at 9 grades or more.
Then the HF link plate electric plating of whole board that above-mentioned chemical-copper-plating process is handled carries out thermal shock reliability survey
Examination, the Metallograph of slice shows that hole wall copper facing is complete, and electro-coppering and hole wall are without detaching.
Embodiment 4
The present embodiment provides a kind of chemical-copper-plating process of wiring board, include the following steps：
(1) liquid medicine desmearing：With embodiment 2；
(2) it toasts：By step (1), treated that HF link plate is placed in 150 DEG C of baking ovens toasts 20min；
(3) oil removing：Step (2) treated HF link plate is immersed in 60 DEG C of degreasing fluid SkyClean 321, processing
Then 30s rinses 1min with deionized water；
(4) microetch：Step (3) treated HF link plate is immersed in 32 DEG C of micro-corrosion liquids, then microetch 70s is spent
Ionized water rinses 1min；
(5) it presoaks：Step (4) treated HF link plate is immersed in 20 DEG C of prepreg solution SkyCat 330, preimpregnation
45s；
(6) it activates：Step (5) treated HF link plate is immersed in 60 DEG C of ionic palladium activating solution SkyCat335, it is living
Change 30s, then rinses 1min with deionized water；
(7) activating and reducing：Step (6) treated HF link plate is immersed in 38 DEG C of activating and reducing liquid SkyCat336,
Then activating and reducing 30s rinses 1min with deionized water；
(8) electroless copper：Step (7) treated HF link plate is immersed into 35 DEG C of chemical bronze plating liquid SkyCopp 365
In, then copper facing 10min rinses 1min, hot blast drying with deionized water.
The wiring board that above-mentioned chemical-copper-plating process is handled is fabricated to backlight to be sliced, peep hole backlight situation, as a result
It has been shown that, backlight series is at 9 grades or more.
Then the wiring board electric plating of whole board that above-mentioned chemical-copper-plating process is handled carries out thermal shock reliability test,
The Metallograph of slice shows that hole wall copper facing is complete, and electro-coppering and hole wall are without detaching.
Embodiment 5
The present embodiment provides a kind of carbon pores chemical industry skills of wiring board, include the following steps：
(1) it toasts：Wiring board after drilling is placed in 120 DEG C of baking ovens and toasts 3h；
(2) oil removing：Step (1) treated wiring board is immersed in degreasing fluid SkyCarbon 383, is stirred at room temperature
Then 1.5min rinses 30s with deionized water；
(3) carbon pores：Step (2) treated wiring board is immersed in carbonaceous conductive liquid SkyCarbon 385, is stirred at room temperature
It mixes and impregnates 1.5min, hot blast drying.After the processing of carbonaceous conductive liquid, you can one layer of carbonaceous conductive layer is deposited on hole wall, so as to follow-up
Electro-coppering.
Flash a thin layer copper carries out backlight test on wiring board after above-mentioned carbon pores, the results show that its backlight level
>=9 grades.Wiring board Jing Guo above-mentioned processing is subjected to electric plating of whole board again, then carries out thermal shock test, the metallography microscope of slice
Photo shows, hole wall is without plating leakage, and electro-coppering and hole wall are without detaching.
Embodiment 6
The present embodiment provides a kind of formation conductive polymer membrane process of wiring board, include the following steps：
(1) it toasts：Multilayer circuit board after drilling is placed in 130 DEG C of baking ovens and toasts 2.5h；
(2) oil removing：By step (1), treated that wiring board is placed in degreasing fluid SkyPoly 391, at 62 DEG C at heat preservation
2min is managed, then rinses 1min with deionized water；
(3) it aoxidizes：By step (2), treated that wiring board is placed in oxidation solution SkyPoly 393, controls the temperature of oxidation solution
Degree is 70 DEG C, isothermal holding 3min, then rinses 1min with deionized water；
(4) it forms a film：By step (3), treated that wiring board is placed in into film liquid SkyPoly 396, at 20 DEG C at heat preservation
4min is managed, is washed, drying, you can one layer of macromolecule conductive film is formed on hole wall.
Flash a thin layer copper on wiring board after above-mentioned formation macromolecule conductive film carries out backlight test, the results show that
Its backlight level >=9 grade.Electric plating of whole board will be carried out again by treated wiring board, then carry out thermal shock test, cut
The Metallograph of piece shows, hole wall is without plating leakage, and electro-coppering and hole wall are without detaching.
Applicant states, the foregoing is merely the specific implementation mode of the present invention, but protection scope of the present invention not office
It is limited to this, person of ordinary skill in the field is it will be clearly understood that any belong to those skilled in the art and taken off in the present invention
In the technical scope of dew, the change or replacement that can be readily occurred in are all fallen within protection scope of the present invention and the open scope.
Claims (10)
1. a kind of hole metallization technique of wiring board, which is characterized in that the hole metallization technique includes following operation：
Before oil removing, wiring board is toasted.
2. hole metallization technique according to claim 1, which is characterized in that terminate from the baking to the hole metallization
The time that technique is completed is less than or equal to for 24 hours, preferably smaller than be equal to 12h；
Preferably, the temperature of the baking is 100-150 DEG C, further preferably 120-130 DEG C；
Preferably, the time of the baking is 20min-5h, further preferably 2-4h.
3. hole metallization technique according to claim 1 or 2, which is characterized in that the hole metallization technique is chemical plating
Process for copper or directly electroplating technology；
Preferably, the chemical-copper-plating process includes the following steps：The wiring board is toasted successively, oil removing, microetch, work
Change, activating and reducing/speedization and electroless copper；
Preferably, the directly electroplating technology is carbon pores chemical industry skill or formation conductive polymer membrane process.
4. hole metallization technique according to claim 3, which is characterized in that the chemical-copper-plating process further includes：Institute
Plasma cleaning desmearing or liquid medicine desmearing are carried out to the wiring board before stating baking；
Preferably, the one kind of the gas that the plasma cleaning desmearing uses in oxygen, nitrogen, carbon tetrafluoride or argon gas
Or at least two combination；
Preferably, the pressure of the plasma cleaning desmearing is 0.1-0.25torr；
Preferably, the temperature of the plasma cleaning desmearing be 70-100 DEG C, further preferably 75-85 DEG C, more preferably
80℃；
Preferably, the time of the plasma cleaning desmearing is 5-60min, further preferably 20-30min；
Preferably, the liquid medicine desmearing includes the following steps：The wiring board is expanded successively, stings erosion and neutralization；
Preferably, the time of the expansion is 1-10min, further preferably 3-8min；
Preferably, the temperature of the expansion is 50-80 DEG C, further preferably 60-70 DEG C；
Preferably, the time for stinging erosion is 0.5-5min, further preferably 1-3min；
Preferably, the temperature for stinging erosion is 70-90 DEG C, further preferably 75-85 DEG C；
Preferably, the time of the neutralization is 0.5-3min, further preferably 1-2min；
Preferably, the temperature of the neutralization is 20-50 DEG C, further preferably 30-40 DEG C.
5. hole metallization technique according to claim 3 or 4, which is characterized in that the oil removing is carried out with degreasing fluid, institute
The temperature for stating oil removing is 25-70 DEG C；
Preferably, the time of the oil removing is 30-150s, further preferably 60-100s.
6. according to claim 3-5 any one of them hole metallization techniques, which is characterized in that the micro-corrosion liquid that the microetch uses
For sulfuric acid-sodium peroxydisulfate micro-corrosion liquid or sulfuric acid-hydrogen peroxide microetchant；
Preferably, the microetch amount of the microetch is 0.3-1.5 μm；
Preferably, the temperature of the microetch is 25-35 DEG C；
Preferably, the time of the microetch is 30-120s.
7. according to claim 3-6 any one of them hole metallization techniques, which is characterized in that the chemical-copper-plating process also wraps
It includes：Between the microetch and activation, the wiring board is presoaked；
Preferably, the preimpregnation is carried out with prepreg solution, and the temperature of the preimpregnation is 18-30 DEG C；
Preferably, the time of the preimpregnation is 10-60s.
8. according to claim 3-7 any one of them hole metallization techniques, which is characterized in that the activating solution that the activation uses
For ionic palladium activating solution or colloidal pd activation solution；
Preferably, the temperature of the activation is 35-60 DEG C, further preferably 45-55 DEG C；
Preferably, the time of the activation is 30-120s, further preferably 50-80s；
Preferably, the content of palladium is 50-200ppm, further preferably 100-150ppm in the ionic palladium activating solution；
Preferably, the content of palladium is 15-90ppm, further preferably 20-30ppm in the colloidal pd activation solution.
9. according to claim 3-8 any one of them hole metallization techniques, which is characterized in that the activating and reducing/speedization
Temperature is 30-40 DEG C；
Preferably, the time of the activating and reducing/speedization is 20-90s, further preferably 40-60s.
10. according to claim 3-9 any one of them hole metallization techniques, which is characterized in that the temperature of the electroless copper
It is 28-40 DEG C, preferably 30-37 DEG C；
Preferably, the time of the electroless copper is 3-20min.
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| CN109518240A (en) * | 2018-11-20 | 2019-03-26 | 深圳市新宇腾跃电子有限公司 | A kind of Microvia electro-plating pre-treatment method |
| CN109618492A (en) * | 2018-11-23 | 2019-04-12 | 广东工业大学 | A kind of processing method of PTFE circuit board apertures |
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| CN113518516A (en) * | 2021-03-30 | 2021-10-19 | 新余市木林森线路板有限公司 | Manufacturing process of flexible circuit board |
| CN113993303A (en) * | 2021-10-27 | 2022-01-28 | 上海天承化学有限公司 | Method for metallizing holes of mixed-pressure circuit board |
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| CN109618492B (en) * | 2018-11-23 | 2021-02-26 | 广东工业大学 | Machining method for PTFE circuit board hole |
| CN111712064A (en) * | 2020-05-22 | 2020-09-25 | 东莞联桥电子有限公司 | Blind hole processing method of multilayer circuit board |
| CN111712064B (en) * | 2020-05-22 | 2022-03-11 | 东莞联桥电子有限公司 | Blind hole processing method of multilayer circuit board |
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| CN113993303A (en) * | 2021-10-27 | 2022-01-28 | 上海天承化学有限公司 | Method for metallizing holes of mixed-pressure circuit board |
| CN113993303B (en) * | 2021-10-27 | 2023-12-22 | 上海天承化学有限公司 | Method for metallizing holes of mixed-voltage circuit board |
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