CN108463527A - The manufacturing method of three-dimensionally integrated laminate circuits sheet for manufacturing and three-dimensionally integrated laminate circuits - Google Patents

The manufacturing method of three-dimensionally integrated laminate circuits sheet for manufacturing and three-dimensionally integrated laminate circuits Download PDF

Info

Publication number
CN108463527A
CN108463527A CN201780004484.9A CN201780004484A CN108463527A CN 108463527 A CN108463527 A CN 108463527A CN 201780004484 A CN201780004484 A CN 201780004484A CN 108463527 A CN108463527 A CN 108463527A
Authority
CN
China
Prior art keywords
manufacturing
adhesive phase
dimensionally integrated
laminate circuits
sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201780004484.9A
Other languages
Chinese (zh)
Other versions
CN108463527B (en
Inventor
根津裕介
杉野贵志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lintec Corp
Original Assignee
Lintec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lintec Corp filed Critical Lintec Corp
Publication of CN108463527A publication Critical patent/CN108463527A/en
Application granted granted Critical
Publication of CN108463527B publication Critical patent/CN108463527B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature

Abstract

The present invention provides a kind of three-dimensionally integrated laminate circuits sheet for manufacturing 1, it is between multiple semiconductor chips with through electrode, it is used to mutually bond the multiple semiconductor chip and three-dimensionally integrated laminate circuits is made, the three-dimensionally integrated laminate circuits sheet for manufacturing 1 at least has the adhesive phase 13 of curability, adhesive phase 13 contains conducting filler, and the standard deviation of the thickness (T2) of adhesive phase 13 is 2.0 μm or less.The three-dimensionally integrated laminate circuits sheet for manufacturing 1 can manufacture the three-dimensionally integrated laminate circuits with excellent exothermicity.

Description

The manufacturing method of three-dimensionally integrated laminate circuits sheet for manufacturing and three-dimensionally integrated laminate circuits
Technical field
The present invention relates to a kind of piece for being suitable for manufacturing three-dimensionally integrated laminate circuits and use the three-dimensionally integrated layer for having the piece The manufacturing method of folded circuit.
Background technology
From the high capacity of electronic circuit in recent years, the angle of multifunction, by multiple semiconductor chips solid The exploitation for the three-dimensionally integrated laminate circuits (hereinafter sometimes referred to " laminate circuits ") being laminated is carrying out.Such stacking electricity Lu Zhong, in order to minimize and multifunction, using with the through electrode (TSV) for being through to its opposing face from circuit forming face Semiconductor chip.In this case, the semiconductor chip being stacked each other by respectively have through electrode (or setting exist The convex block of the end of through electrode) contact to each other and be electrically connected.
When the such laminate circuits of manufacture, in order to ensure above-mentioned electrical connection and mechanical strength, using resin combination, While through electrode is electrically connected to each other, semiconductor chip is bonded to each other.For example, a kind of method is proposed in patent document 1, It makes the film adhesive of commonly known as non-conductive film (No n-Conductive Film) between semiconductor chip, To which semiconductor chip is bonded to each other.
However, in above-mentioned laminate circuits, since semiconductor chip is by multiple stackings, when to power on circuitry stream very It is easy fever.The fever of laminate circuits can cause to calculate processing capacity reduction or faulty operation, become laminate circuits reduced performance The reason of.In addition, if laminate circuits excessive heating, also will produce laminate circuits deformation, damaged or failure.Therefore, in order to true Protect reliability, it is desirable that above-mentioned laminate circuits have high exothermicity.
Existing technical literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2010-010368 bulletins
Invention content
The technical problem to be solved in the present invention
However, the laminate circuits manufactured using previous adhesive, which are existed, may not can reach asking for good exothermicity Topic.
Given this fact of the present invention and complete, its purpose is to provide a kind of can manufacture to be put with excellent The three-dimensionally integrated laminate circuits sheet for manufacturing of hot three-dimensionally integrated laminate circuits.In addition, the present invention also aims to provide A kind of manufacturing method of such three-dimensionally integrated laminate circuits.
Solve the technological means of technical problem
In order to achieve the above objectives, first, the present invention provides a kind of three-dimensionally integrated laminate circuits sheet for manufacturing, between tool Between there are multiple semiconductor chips of through electrode, it is used to mutually bond the multiple semiconductor chip and three-dimensional collection is made At laminate circuits, which is characterized in that the three-dimensionally integrated laminate circuits sheet for manufacturing at least has the adhesive phase of curability, institute It states adhesive phase and contains conducting filler, the standard deviation of the thickness (T2) of described adhesive layer is 2.0 μm or less (inventions 1).
For the three-dimensionally integrated laminate circuits sheet for manufacturing of foregoing invention (invention 1), by making adhesive phase include to have The conducting filler of high-termal conductivity, and the standard deviation of the thickness (T2) of adhesive phase is above range, is manufactured using the piece Laminate circuits exothermicity it is excellent.Therefore, it is manufactured and is used by using the three-dimensionally integrated laminate circuits of foregoing invention (invention 1) Piece can manufacture the laminate circuits with high reliability.
In foregoing invention (invention 1), the conducting filler preferably by be selected from metal oxide, silicon carbide, carbide, The material of nitride and metal hydroxides is constituted (invention 2).
In foregoing invention (invention 1,2), the content of the conducting filler in described adhesive layer is preferably 35 matter Measure % or more, 95 mass % or less (invention 3).
In foregoing invention (invention 1~3), thermal conductivity of the conducting filler at 25 DEG C be preferably 10W/mK with Upper (invention 4).
In foregoing invention (invention 1~4), the average grain diameter of the conducting filler is preferably 0.01 μm or more, 20 μm (invention 5) below.
In foregoing invention (invention 1~5), the thermal conductivity after the solidification of described adhesive layer be preferably 0.5W/mK or more, 8.0W/mK or less (invention 6).
In foregoing invention (invention 1~6), the material for constituting described adhesive layer preferably comprises Thermocurable ingredient, height Molecular weight constituent and curing catalysts (invention 7).
In foregoing invention (invention 1~7), the glass transition temperature of the high molecular weight components is preferably 50 DEG C or more (invention 8).
In foregoing invention (invention 1~8), the material for constituting described adhesive layer preferably comprises flux component (invention 9).
In foregoing invention (invention 1~9), the thickness of described adhesive layer is preferably 2 μm or more, 500 μm or less (inventions 10)。
In foregoing invention (invention 1~10), the three-dimensionally integrated laminate circuits sheet for manufacturing preferably further has：It is viscous Oxidant layer and base material, wherein the adhering agent layer is layered in a surface side of described adhesive layer, and the base material is layered in described viscous The surface side (invention 11) opposite with described adhesive layer of oxidant layer.
In foregoing invention (invention 11), the thickness of the base material is preferably 10 μm or more, 500 μm or less (inventing 12).
In foregoing invention (invention 11 or 12), the thickness of the thickness (T2) of described adhesive layer relative to the base material (T1) ratio (T2/T1) is preferably 0.01 or more, 5.0 or less (inventions 13).
In foregoing invention (invention 10,11), storage modulus of the sticker at 23 DEG C is preferably 1 × 103Pa with Above, 1 × 109Pa or less (invention 14).
In foregoing invention (invention 11~14), tensile modulus of elasticity of the base material at 23 DEG C be preferably 100MPa with Upper, 5000MPa or less (invention 15).
Second, the present invention provides a kind of manufacturing method of three-dimensionally integrated laminate circuits, it is characterised in that including following process： By the one side of the described adhesive layer of the three-dimensionally integrated laminate circuits sheet for manufacturing (invention 1~10) or the three-dimensionally integrated layer It folds the face opposite with the adhering agent layer of the described adhesive layer of circuit sheet for manufacturing (invention 11~15) and has perforation electricity The process of at least one side fitting of the semiconductor crystal wafer of pole；The semiconductor crystal wafer and the three-dimensionally integrated laminate circuits are manufactured It is cut together with the described adhesive layer of piece, to which slice is the process of the semiconductor chip with adhesive phase；By slice At multiple semiconductor chips with adhesive phase be electrically connected to each other with the through electrode and described adhesive layer with The mode that the semiconductor chip is alternately arranged carries out multiple stackings, the process to obtain semiconductor chip laminate；And The described adhesive layer of the semiconductor chip laminate is set to cure that the described of the semiconductor chip laminate will be constituted The process (invention 16) that semiconductor chip is bonded to each other.
Invention effect
Three-dimensionally integrated laminate circuits sheet for manufacturing according to the present invention can manufacture the three-dimensional collection with excellent exothermicity At laminate circuits.In addition, manufacturing method according to the invention, can manufacture such three-dimensionally integrated laminate circuits.
Description of the drawings
Fig. 1 is the sectional view of the three-dimensionally integrated laminate circuits sheet for manufacturing of the first embodiment of the present invention.
Fig. 2 is the sectional view of the three-dimensionally integrated laminate circuits sheet for manufacturing of second embodiment of the present invention.
Specific implementation mode
Hereinafter, embodiments of the present invention will be described.
[three-dimensionally integrated laminate circuits sheet for manufacturing]
Fig. 1 shows the sectional view of the three-dimensionally integrated laminate circuits sheet for manufacturing 1 of first embodiment.As shown in Figure 1, this The three-dimensionally integrated laminate circuits sheet for manufacturing 1 (hereinafter sometimes referred to " sheet for manufacturing 1 ") of embodiment have adhesive phase 13 and It is laminated in the stripping film 14 of at least one side of the adhesive phase 13.In addition, stripping film 14 can also omit.
In addition, Fig. 2 shows the sectional views of the three-dimensionally integrated laminate circuits sheet for manufacturing 2 of second embodiment.Such as Fig. 2 institutes Show, the three-dimensionally integrated laminate circuits sheet for manufacturing 2 of present embodiment have (hereinafter, sometimes referred to as " sheet for manufacturing 2 ") base material 11, It is laminated in the adhering agent layer 12 of at least one side side of base material 11 and is laminated in the surface side opposite with base material 11 of adhering agent layer 12 Adhesive phase 13.In addition, stripping film 14 can also be laminated on the face opposite with adhering agent layer 12 of adhesive phase 13.
In the three-dimensionally integrated laminate circuits sheet for manufacturing 1,2 of present embodiment, adhesive phase 13, which contains, has high heat conductance Conducting filler.In addition, in the three-dimensionally integrated laminate circuits sheet for manufacturing 1,2 of present embodiment, the thickness of adhesive phase 13 The standard deviation for spending (T2) is 2.0 μm or less.
Generally, due to laminate circuits by being laminated semiconductor chip is multiple, therefore become heat source containing more Circuit, and with being difficult to exothermic construction.Therefore, when to laminate circuits galvanization, laminate circuits are easy fever, and are produced Raw heat is not easy release to outside.
However, in the laminate circuits manufactured using the three-dimensionally integrated laminate circuits sheet for manufacturing 1,2 of present embodiment, by In utilization, semiconductor chip is bonded to each other by the excellent adhesive phase 13 of exothermicity by containing conducting filler, therefore is easy From the end heat release of the adhesive phase 13.In addition, the standard deviation of the thickness (T2) by making adhesive phase 13 is above range, Constituting the thickness of the adhesive 13 of laminate circuits becomes uniform, and the thickness of laminate circuits itself also becomes uniform, as a result, layer Heat conduction in folded circuit is excellent.The exothermicity of laminate circuits entirety is excellent as a result, even if can also inhibit excessively to become when galvanization For high temperature.As a result, it is possible to manufacture the laminate circuits with high reliability.
On the other hand, it since laminate circuits are laminated semiconductor chip is multiple, is generally difficult to that electricity will be laminated Uniform thickness is made in road.This is because, even if constitute laminate circuits semiconductor chip or adhesive phase thickness with it is required There are the deviations of very little for thickness, but due to accumulating semiconductor chip and adhesive phase stacking, the deviation, as a result, as making Laminate circuits and the serious different one of the major reasons of required thickness.In addition, sometimes by the through electrode of semiconductor crystal wafer or Convex block will produce gap when being embedded to adhesive phase, and part occurs the thickness of the adhesive phase in laminate circuits due to the gap sometimes Variation.In particular, in laminate circuits, due to the interface with multiple semiconductor crystal wafers and adhesive phase for generating gap, Therefore the probability for generating gap is high, is more difficult to keep the thickness of laminate circuits uniform.But the three-dimensional of present embodiment is collected At laminate circuits sheet for manufacturing 1,2, it is above range by making the standard deviation of the thickness (T2) of adhesive phase 13, can inhibits The thickness of adhesive phase 13 and the deviation of required thickness, thereby, it is possible to uniform thickness is made in laminate circuits.Further, lead to The standard deviation for crossing the thickness (T2) for making adhesive phase 13 is above range, can inhibit the through electrode of semiconductor crystal wafer or The generation in gap when convex block is embedded to adhesive phase 13 also laminate circuits can be made as a result, so as to be embedded to well Even thickness.
The three-dimensionally integrated laminate circuits sheet for manufacturing 1,2 of present embodiment is between multiple semiconductor cores with through electrode Between piece, it is used to mutually bond multiple semiconductor chip and three-dimensionally integrated laminate circuits is made.One end of through electrode Or both ends can also be protruded from the surface of semiconductor chip.In addition, semiconductor chip can also be further equipped with convex block, the situation Under, which may be provided at the one or both ends of through electrode.
For the three-dimensionally integrated laminate circuits of present embodiment in piece 1,2, adhesive phase 13 has curability.Herein, have Curability, which refers to adhesive phase 13, to be cured by heating etc..That is, adhesive phase 13 is in the state of constituting sheet for manufacturing 1,2 And it is uncured.Adhesive phase 13 can be Thermocurable, or may be energy ray-curable.But from use will be manufactured Piece 1,2 is used to that cured angle can be carried out well when the manufacturing method of laminate circuits to set out, and adhesive phase 13 is preferably heat Curability.Specifically, when sheet for manufacturing 1,2 is used for the manufacturing method of laminate circuits, as described later, adhesive phase 13 is with quilt It is attached to the state of semiconductor crystal wafer and is sliced.Thereby, it is possible to the adhesive phases 13 for obtaining semiconductor chip and being sliced Laminated body.For the laminated body, the face paste of 13 side of adhesive phase invests on the laminated body of semiconductor chip, and in the shape The solidification of adhesive phase 13 is carried out under state.In general, semiconductor chip does not have the transmittance or most cases to energy-ray Very low, the even such situation of the lower transmittance, as long as adhesive phase 13 has Thermocurable, it will be able to make adhesive phase 13 promptly cure.
1. adhesive phase
(1) material
In the three-dimensionally integrated laminate circuits sheet for manufacturing 1,2 of present embodiment, the material of composition adhesive phase 13, which contains, leads Hot filler.Furthermore it is preferred that the material further contain Thermocurable ingredient, curing agent, curing catalysts, high molecular weight at Divide, the ingredient etc. with flux function.
(1-1) conducting filler
The material for constituting adhesive phase 13 contains conducting filler.Herein, conducting filler refers to having high heat conductance Filler, for example, being the filler that the thermal conductivity at 25 DEG C is 10W/mK or more, the thermal conductivity at preferably 25 DEG C is 20W/mK Above filler, the filler that the thermal conductivity at particularly preferably 25 DEG C is 30W/mK or more.In addition, conducting filler is at 25 DEG C Under the upper limit value of thermal conductivity do not limit, but usually 300W/mK or less.
As described above, there is the mutual of uniform thickness containing conducting filler, with laminate circuits by adhesive phase 13 Effect, adhesive phase 13 show excellent exothermicity.In addition, by making adhesive phase 13 contain conducting filler, it is obtained In laminate circuits, rigidity is got higher, and is not susceptible to the change in size generated according to environmental change.
As above-mentioned conducting filler, it is preferable to use selecting free zinc oxide, magnesia, aluminium oxide, titanium oxide, iron oxide etc. The metals hydroxide such as the carbide such as metal oxide, silicon carbide, calcium carbonate, boron nitride, aluminum nitride and other nitride, magnesium hydroxide The filler that the material of object and talcum is constituted.Wherein, from the angle that can reach superior exothermicity, it is preferable to use choosing The carbide such as the metal oxides such as free zinc oxide, magnesia, aluminium oxide, titanium oxide, iron oxide, silicon carbide, calcium carbonate, nitridation The filler that the material of the metal hydroxides such as boron, aluminum nitride and other nitride and magnesium hydroxide is constituted.About these materials, can incite somebody to action Its powder is used as filler, it is possible to use spheroidization and as the substance of bead as filler, or its single crystals also can be used Fiber is as filler.It can be used alone or combine two or more by the obtained conducting filler of above-mentioned material and made With.In addition, conducting filler does not preferably have electric conductivity.
The shape of conducting filler is not particularly limited, for example, can have selected from granular, needle-shaped, plate and it is amorphous in At least one shape.Wherein, it is preferable to use granular conducting filler.By making conducting filler be granular, adhesive phase 13 In the filling rate of conducting filler promoted, effective thermally conductive pathways are formed in adhesive phase 13, as a result, adhesive phase 13 has There is more good exothermicity.
When conducting filler is granular, the lower limiting value of average grain diameter is preferably 0.01 μm or more, further preferably 0.05 μm or more, particularly preferably 0.1 μm or more.In addition, the upper limit value of the average grain diameter of above-mentioned conducting filler is preferably 20 μ M hereinafter, further preferably 5 μm hereinafter, particularly preferably 1 μm or less.By making the average grain diameter of conducting filler be above-mentioned The exothermicity of range, adhesive phase 13 is better, and the Film making properties of adhesive phase 13 become good, further, can improve viscous The filling rate of conducting filler in mixture layer 13.In addition, the average grain diameter of the conducting filler in this specification refers to：It uses The long diameter of axle of elective 20 conducting fillers of determination of electron microscopy, and the grain calculated as its arithmetic mean of instantaneous value Diameter.
In addition, when conducting filler is granular, the maximum particle diameter of the conducting filler is preferably 50 μm hereinafter, further excellent It is selected as 25 μm or less.By making the maximum particle diameter of conducting filler for 50 μm hereinafter, being easy to fill conducting filler to bonding In oxidant layer 13, as a result, adhesive phase 13 has more good exothermicity.In addition, by making the maximum particle diameter of inorganic filler be 50 μm hereinafter, the through electrode (or the convex block in the end of through electrode is arranged) in laminate circuits is easy to be electrically connected each other It connects, the laminate circuits with high reliability can be effectively manufactured.
When conducting filler is granular, the particle diameter distribution (CV values) of conducting filler is preferably 15% or more, particularly preferably It is 30% or more.In addition, the particle diameter distribution (CV values) is preferably 80% hereinafter, particularly preferably 60% or less.By by heat conduction The particle diameter distribution of property filler is set as above range, can effectively achieve uniform exothermicity.In addition, CV values are the deviations of grain size Index, CV values are bigger, then mean that the deviation of grain size is bigger.Therefore, especially by make CV values be 15% or more, grain size Deviation becomes good, is easily accessible in the gap of particle and particle with smaller size of particle.Thereby, it is possible to effectively fill Conducting filler is easy to get the adhesive phase 13 of display high exothermicity.In addition, by making CV values for 80% hereinafter, can press down The grain size of conducting filler processed becomes larger than the thickness of adhesive phase 13.As a result, it is possible to inhibit adhesive phase 13 with it is viscous The concave-convex generation on the face of 12 opposite side of oxidant layer, good adhesiveness is easy to get.Further, by making CV values be 80% Hereinafter, being easy to form the adhesive phase 13 with uniform performance.In addition, the particle diameter distribution (CV values) of conducting filler can pass through Following manner obtains：The electron microscope observation for carrying out conducting filler measures the long diameter of axle to 200 or more particles and finds out Thus the standard deviation divided by above-mentioned average grain diameter will be obtained value as particle diameter distribution (CV by the standard deviation of the long diameter of axle Value).
When the shape of conducting filler is needle-shaped, the average axial length (the average axial length of long axis direction) of the conducting filler is excellent It is selected as 0.01 μm or more, particularly preferably 0.05 μm or more, further preferably 0.1 μm or more.In addition, the average axial length is preferred For 10 μm hereinafter, particularly preferably 5 μm hereinafter, further preferably 1 μm or less.
The radius-thickness ratio (aspect ratio) of conducting filler is preferably 1 or more, and particularly preferably 5 or more.In addition, the diameter Thickness rate is preferably 20 hereinafter, particularly preferably 15 or less.Radius-thickness ratio by making conducting filler is above range, in adhesive Efficient thermally conductive pathways are formed in layer 13, adhesive phase 13 has more good exothermicity.It is incited somebody to action in addition, radius-thickness ratio can be used as The short axle number average diameter of conducting filler divided by long number of axle average diameter and be worth and obtained.Herein, short axle number average diameter and length Number of axle average diameter refers to the short shaft diameter and length that elective 20 conducting fillers are measured by electron micrograph The diameter of axle, and a number average particle diameter calculated as respective arithmetic mean of instantaneous value.
The proportion of conducting filler is preferably 1g/cm3More than, particularly preferably 3g/cm3More than.In addition, the proportion is preferred For 10g/cm3Hereinafter, particularly preferably 6g/cm3Below.By making the proportion be above range, the exothermicity of adhesive phase 13 is more It is excellent.
In addition, on the basis of the total amount of material to constitute adhesive phase 13, conducting filler in adhesive phase 13 The lower limiting value of content is preferably 35 mass % or more, further preferably 40 mass % or more, particularly preferably 50 mass % with On.In addition, the upper limit value of the content of above-mentioned conducting filler be preferably 95 mass % hereinafter, further preferably 90 mass % with Under.By in the material for constituting adhesive phase 13, making the content of conducting filler be 35 mass % or more, adhesive phase 13 has There is more good exothermicity, using the three-dimensionally integrated laminate circuits sheet for manufacturing 1,2 of present embodiment, tool can be effectively manufactured There are the laminate circuits of excellent exothermicity.In addition, by making the content for 95 mass % hereinafter, constituting the material of adhesive phase 13 In, the content of ingredient in addition to conducting filler relatively heighten, adhesive phase 13 can play more good adhesiveness.
(1-2) Thermocurable ingredient
The material for constituting adhesive phase 13 preferably comprises Thermocurable ingredient.As Thermocurable ingredient, as long as being usual The adhesive ingredients of connection for semiconductor chip, is not particularly limited.Can specifically enumerate epoxy resin, Phenolic resin, melmac, carbamide resin, polyester resin, carbamate resins, acrylic resin, polyimide resin, Benzoxazine colophony, phenoxy resin etc., they can be used alone or combine two or more and use.Wherein, from viscous Conjunction property is angularly set out, preferred epoxy and phenolic resin, particularly preferred epoxy resin.
Epoxy resin have it is heated, carry out three-dimensional nettedization and form the property of firm solidfied material.As in this way Epoxy resin, well known various epoxy resin all the time can be used, specifically, can enumerate bisphenol-A, Bisphenol F, The glycidol ether of the phenols such as benzenediol, phenyl novolac, cresol novolak；Butanediol, polyethylene glycol, polypropylene glycol etc. The glycidol ether of alcohols；The glycidol ether of the carboxylic acids such as phthalic acid, M-phthalic acid, tetrahydrophthalic acid；With contracting The substitution of water glyceryl is bonded in glycidyl type or alkyl made of the reactive hydrogen on the nitrogen-atoms of aniline isocyanuric acid ester etc. The epoxy resin of glycidyl type；Such as vinyl cyclohexane dicyclic oxide, two hexamethylenes of 3,4- epoxycyclohexyl-methyls -3,4- Alkane carboxylate,-dioxane of 2- (3,4- epoxy groups) cyclohexyl -5,5- spiral shells (3,4- epoxy groups) hexamethylene-etc. like that, for example lead to It crosses and the carbon-to-carbon double bond of intramolecular is aoxidized and is imported with epoxy group, so-called alicyclic ring type ring oxide.Further, it is also possible to use Epoxy resin with biphenyl backbone, two cyclohexadiene skeletons, naphthalene skeleton etc..These epoxy resin can be used alone one kind, It can combine two or more and use.
On the basis of the total amount of material for constituting adhesive phase 13, the above-mentioned thermosetting in the material of adhesive phase 13 is constituted The lower limiting value of the content of the property changed ingredient is preferably 5 mass % or more, further preferably 10 mass % or more.In addition, above-mentioned heat The upper limit value of the content of curability composition is preferably 75 mass % hereinafter, further preferably 55 mass % or less.On making The content for stating Thermocurable ingredient is above range, is easy to the heat generation starting temperature and fever peak temperature being adjusted to institute The range stated.
(1-3) curing agent solidification catalyst
When the material of composition adhesive phase 13 contains the Thermocurable ingredient, which preferably further contains solidification Agent and curing catalysts.
It as curing agent, is not particularly limited, phenols, amine, thio-alcohol etc. can be enumerated, it can be according to the thermosetting It is melted into the type divided and suitably selects.For example, when using epoxy resin as curability composition, from the reactivity with epoxy resin It angularly sets out, preferably phenols.
As phenols, for example, can enumerate bisphenol-A, bisphenol-A, diallyl bisphenol, xenol, Bisphenol F, Diallyl Bisphenol F, triphenyl methane type phenol, four phenol, phenolic varnish type phenol, cresol novolac resin etc., they can One kind is used alone, it can also combine two or more and use.
In addition, as curing catalysts, it is not particularly limited, imidazoles, Phosphorus, amine etc. can be enumerated, it can basis The type of the heat curable component etc. and suitably select.In addition, as curing catalysts, it is preferable to use not living under prescribed conditions The potentiality curing catalysts that property and more than the crimping temperature for being heated to the high temperature for making melt solder when activate.Into One step, the potentiality curing catalysts are further preferably used as the potentiality curing catalysts through microencapsulation.
For example, when using epoxy resin as curability composition, from the reactivity, storage stability, solid with epoxy resin The physical property of compound, curing rate angularly set out, as curing catalysts, it is preferable to use imidazoles curing catalysts.As miaow Azole curing catalysts, can use well known imidazoles curing catalysts, but from excellent curability, storage stability and The angle of connection reliability is set out, preferably the imidazole catalyst with triazine skeleton.They can be used alone and also can be used simultaneously It is two or more.In addition, they also can be used as the potentiality curing catalysts through microencapsulation and use.From excellent curability, The angle of storage stability and connection reliability is set out, and the fusing point of imidazoles curing catalysts is preferably 200 DEG C or more, especially excellent It is selected as 250 DEG C or more.
In present embodiment, on the basis of the total amount of material for constituting adhesive phase 13, the material of adhesive phase 13 is constituted The lower limiting value of the content of curing catalysts in material is preferably 0.1 mass % or more, further preferably 0.2 mass % or more, Particularly preferably 0.4 mass % or more.In addition, the upper limit value of the content of above-mentioned curing catalysts be preferably 10 mass % hereinafter, Further preferably 5 mass % are hereinafter, particularly preferably 3 mass % or less.If in the material for constituting adhesive phase 13, solidification The content of catalyst is above-mentioned lower limiting value or more, then Thermocurable ingredient can be made to cure sufficiently.On the other hand, if solidification is urged The content of agent is above-mentioned upper limit value hereinafter, then the storage stability of adhesive phase 13 becomes good.
(1-4) high molecular weight components
The material of above-mentioned composition adhesive phase 13 preferably comprises the high molecular weight components in addition to the Thermocurable ingredient. By containing the high molecular weight components, 90 DEG C of melt viscosities and the average linear expansion coefficient of the material readily satisfy aftermentioned numerical value The connection reliability of range, obtained laminate circuits is high.
As high molecular weight components, for example, can enumerate (methyl) acrylic resin, phenoxy resin, polyester resin, Polyurethane resin, polyimide resin, polyamide-imide resin, silicone-modified polyimide resin, polybutadiene, Acrylic resin, styrene-butadiene-styrene, styrene-ethylene-butylene-styrene copolymer, polyacetals tree Fat, the polyvinyl acetal resin headed by polyvinyl butyral resin, butyl rubber, chloroprene rubber, polyamide resin Fat, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic copolymer, acrylonitrile-butadiene-styrene copolymer, Polyvinyl acetate, nylon etc. can be used alone or combine two or more and uses.
In addition, " (methyl) acrylic acid " in this specification refers to both acrylic acid and methacrylic acid." (methyl) Other similar terms such as acrylic resin " are also identical.
In the high molecular weight components, it is preferable to use selected from by polyvinyl acetal resin and polyester resin, phenoxy group tree One or more of the group that fat is formed.The material of above-mentioned sheet for manufacturing is constituted by containing these high molecular weight components, 90 DEG C Melt viscosity and average linear expansion coefficient are low value, and result is easy to make these values in aftermentioned numberical range.
Herein, polyvinyl acetal resin obtains in the following manner：Using aldehyde to by by polyvinyl acetate soap Change and obtains polyvinyl alcohol progress acetalation.As the aldehyde for acetalation, n-butanal, n-hexyl aldehyde, valeraldehyde etc. can be enumerated. As polyvinyl acetal resin, further preferably polyvinyl butyral resin made of acetalation is carried out using using n-butanal.
As polyester resin, such as can enumerate pet resin, poly terephthalic acid fourth two Polyester resin obtained from the dicarboxylic acid component of alcohol ester resin, poly- oxalic acid glycol ester resin etc. and diol component polycondensation；Make to gather The modified polyester resin of urethane-modified polyester etc. obtained from isocyanate compound is reacted with them；By propylene Polyester resin etc. made of acid resin and/or vinylite grafting, can be used alone or combine it is two or more and It uses.
In addition, for constituting the material of adhesive phase 13, contain polyvinyl acetal resin or polyester resin conduct When above-mentioned high molecular weight components, particularly preferably further contain phenoxy resin.When further containing phenoxy resin, constitute viscous The material of mixture layer 13 is more prone to that 90 DEG C of melt viscosities and average linear expansion coefficient is made to meet aftermentioned numberical range.
It as phenoxy resin, is not particularly limited, such as bisphenol A-type, bisphenol-f type, bisphenol-A/Bisphenol F copolymerization can be illustrated Type, biphenyl phenolic, biphenyl type etc..
The lower limiting value of the softening point of above-mentioned high molecular weight components is preferably 50 DEG C or more, further preferably 100 DEG C or more, Particularly preferably 120 DEG C or more.In addition, the upper limit value of the softening point of above-mentioned high molecular weight components is preferably 200 DEG C hereinafter, into one Preferably 180 DEG C of step is hereinafter, particularly preferably 150 DEG C or less.By containing the macromolecule that softening point is above-mentioned lower limiting value or more Ingredient is measured, the average linear expansion coefficient of the material of composition adhesive phase 13 can be made to reduce, readily satisfy aftermentioned numberical range. In addition, if softening point be above-mentioned upper limit value hereinafter, if can inhibit the embrittlement of adhesive phase 13.In addition, softening point be according to ASTM D1525 and the value measured.
The lower limiting value of the glass transition temperature of above-mentioned high molecular weight components is preferably 50 DEG C or more, further preferably 60 DEG C or more, particularly preferably 80 DEG C or more.In addition, the upper limit value of the glass transition temperature of above-mentioned high molecular weight components is preferably 250 DEG C hereinafter, further preferably 200 DEG C hereinafter, particularly preferably 180 DEG C or less.It is by containing glass transition temperature High molecular weight components more than above-mentioned lower limiting value can be such that the average linear expansion coefficient of the material of composition adhesive phase 13 reduces, Readily satisfy aftermentioned numberical range.In addition, if glass transition temperature be above-mentioned upper limit value hereinafter, if phase with other materials Capacitive is excellent.In addition, the glass transition temperature of high molecular weight components is the value that is measured using Differential Scanning Calorimetry analysis meter.
The weight average molecular weight of above-mentioned high molecular weight components is preferably 10,000 or more, and further preferably 30,000 or more, it is especially excellent It is selected as 50,000 or more.In addition, upper limit value be preferably 1,000,000 hereinafter, further preferably 700,000 hereinafter, particularly preferably 500,000 with Under.If weight average molecular weight is above-mentioned lower limiting value or more, melt viscosity can be made to reduce while maintaining film formative, therefore And it is preferred that.In addition, if weight average molecular weight be above-mentioned upper limit value hereinafter, if phase with the low molecular weight compositions of Thermocurable ingredient etc. Capacitive is promoted, so it is preferred that.In addition, the weight average molecular weight in this specification is to be measured using gel permeation chromatography (GPC) method Standard polystyren conversion value.
On the basis of the total amount of material for constituting adhesive phase 13, the above-mentioned high score in the material of adhesive phase 13 is constituted The limit value preferably 3 mass % or more, further preferably 5 mass % or more, particularly preferably 7 mass % of the content of son amount ingredient More than.In addition, the upper limit value of the content of above-mentioned high molecular weight components is preferably 95 mass % hereinafter, further preferably 90 matter % is measured hereinafter, particularly preferably 80 mass % or less.If the content of above-mentioned high molecular weight components is above-mentioned lower limiting value or more, can So that 90 DEG C of melt viscosities of the material of composition adhesive phase 13 is become lower value, readily satisfies the numberical range.Separately On the one hand, if the content of above-mentioned high molecular weight components be above-mentioned upper limit value hereinafter, if can further decrease composition adhesive phase The average linear expansion coefficient of 13 material readily satisfies aftermentioned numberical range.
(1-5) has the ingredient of flux function
In present embodiment, when the through electrode of semiconductor chip or convex block is engaged using solder, constitute adhesive phase 13 material preferably comprises the ingredient (hereinafter sometimes referred to " flux component ") with flux function.Flux component has and will be formed In the effect that the metal oxide film of electrode surface removes, the electrical connection between the electrode based on solder can be made more certain, it can Improve the connection reliability of weld part.
It as flux component, is not particularly limited, but the preferably ingredient with phenolic hydroxyl group and/or carboxyl, particularly preferably Ingredient with carboxyl.Have the function of the ingredient of carboxyl while with flux, also has and used by aftermentioned epoxy resin Effect when as Thermocurable ingredient as curing agent.Therefore, the ingredient with carboxyl is due to conduct after the welding is completed Curing agent and reacted and be consumed, therefore can inhibit bad caused by superfluous flux component.
As specific flux component, for example, glutaric acid, 2- methylglutaric acids, adjacent anisic acid, bis-phenol can be enumerated Bis- (the hydroxyl first of acid, adipic acid, acetylsalicylic acid, benzoic acid, diphenylglycollic acid, azelaic acid, benzylbenzoic acid, malonic acid, 2,2- Base) propionic acid, salicylic acid, o-methoxybenzoic acid, m-hydroxybenzoic acid, succinic acid, 2,6- dimethoxy-methyls paracresol, benzene first Sour hydrazides, carbohydrazide, acid dihydrazide, amber acid dihydrazide, glutaric, salicylic acid hydrazides, iminodiacetic acid Two hydrazides, Yi Kang acid dihydrazides, three hydrazides of citric acid, thio carbohydrazide, Benzophenonehydrazones, 4,4 '-oxobenzenesulfonyl hydrazide, oneself Dihydrazi, rosin derivative etc., they can be used alone or combine two or more and use.
As rosin derivative, gum rosin, tall oil rosin (tall rosin), wood rosin, newtrex, hydrogen can be enumerated Change rosin, formylated rosin, rosin ester, Abietyl modified maleic acid resin, rosin modified phenolic resin, rosin modified alkyd resin Deng.
Wherein, particularly preferably using selected from at least one by 2- methylglutaric acids, adipic acid and rosin derivative.2- first Though base glutaric acid and adipic acid are smaller in the material middle-molecular-weihydroxyethyl for constituting adhesive phase 13, since there are two carboxylics for intramolecular tool Base, so even addition flux function is also excellent on a small quantity, it can be particularly suitable for present embodiment.Since rosin derivative softens Point is high, can be assigned while maintaining low linear expansion coefficient it is fluxed, therefore can be particularly suitable for present embodiment.
At least one of the fusing point of flux component and softening point are preferably 80 DEG C or more, more preferably 110 DEG C or more, into one Preferably 130 DEG C or more of step.If at least one of the fusing point of flux component and softening point are above range, can obtain more excellent Different flux function, additionally it is possible to exhaust (out gas) etc. is reduced, so it is preferred that.In addition, the fusing point and softening point of flux component Although upper limit value is not particularly limited, as long as but for example, below the fusing point of solder.
In present embodiment, on the basis of the total amount of material for constituting adhesive phase 13, the material of adhesive phase 13 is constituted The lower limiting value of the content of flux component in material is preferably 0.1 mass % or more, further preferably 0.2 mass % or more, special It You Xuanwei not 0.3 mass % or more.In addition, the upper limit value of the content of above-mentioned flux component is preferably 20 mass % hereinafter, into one Step is preferably 15 mass % hereinafter, particularly preferably 10 mass % or less.If the content of flux component is constituting adhesive phase 13 Material in be above-mentioned lower limiting value or more, then can make the electrical connection between the electrode based on solder become more really, Neng Goujin One step improves the connection reliability of weld part.On the other hand, if the content of flux component be above-mentioned upper limit value hereinafter, if can prevent Only Ion transfer etc. caused by superfluous flux component is bad.
(1-6) other ingredients
Adhesive phase 13 can also further contain plasticizer, stabilizer, tackifier, colorant, coupling agent, antistatic agent, Antioxidant, conductive particle, inorganic filler in addition to the conducting filler etc. are as the material for constituting the adhesive phase 13 Material.
For example, by making the material of composition adhesive phase 13 contain conductive particle, three-dimensionally integrated laminate circuits are manufactured When assigning anisotropic conductive with piece 1,2, can by mend it is all-welded in a manner of or will partly be led in a manner of different from welding Body chip is electrically connected each other.
(2) physical property
(2-1) thermal conductivity
In the three-dimensionally integrated laminate circuits sheet for manufacturing 1,2 of present embodiment, the thermal conductivity after adhesive phase 13 cures is excellent It is selected as 0.5W/mK or more, particularly preferably 0.7W/mK or more, further preferably 1.0W/mK or more.In addition, the heat Conductance is preferably 8.0W/mK hereinafter, particularly preferably 4.0W/mK is hereinafter, further preferably 3.0W/mK or less.It is logical Crossing makes the thermal conductivity be 0.5W/mK or more, and adhesive phase 13 is easy the good exothermicity of performance, uses the three of present embodiment Dimension, which integrates laminate circuits sheet for manufacturing 1,2, can effectively manufacture the laminate circuits with high reliability.On the other hand, by making The thermal conductivity is 8.0W/mK hereinafter, the content of the conducting filler in adhesive phase 13 will not excessively increase, as a result, holding Easily have both the adhesiveness and piece processability of the good exothermicity and adhesive phase 13 in adhesive phase 13.In addition, adhesive phase Shown in the assay method of 13 thermal conductivity test example as be described hereinafter.
(2-2) melt viscosity
In the three-dimensionally integrated laminate circuits sheet for manufacturing 1,2 of present embodiment, the solidification of the material of adhesive phase 13 is constituted The upper limit value of melt viscosity (hereinafter, sometimes referred to as " 90 DEG C of melt viscosities ") at preceding 90 DEG C is preferably 5.0 × 105Pa·s Hereinafter, particularly preferably 1.0 × 105Pas is hereinafter, further preferably 5.0 × 104Pas or less.If 90 DEG C of melt viscosities For above-mentioned upper limit value hereinafter, then when making adhesive phase 13 between electrode, semiconductor chip surface can be followed well On the bumps due to through electrode or convex block, can prevent from generating on the interface of semiconductor chip and adhesive phase 13 empty Gap.In addition, the lower limiting value of 90 DEG C of melt viscosities is preferably 1.0 × 100Pas or more, particularly preferably 1.0 × 101Pas with On, further preferably 1.0 × 102Pas or more.If 90 DEG C of melt viscosities are above-mentioned lower limiting value or more, adhesive is constituted Layer 13 material will not excess flow, can when attaching adhesive phase 13 or when laminated semiconductor chip anti-locking apparatus dirt Dye.Therefore, the three-dimensionally integrated laminate circuits sheet for manufacturing 1,2 of present embodiment is by making 90 DEG C of melt viscosities of constituent material be Above range becomes with high reliability.
Herein, constituting 90 DEG C of melt viscosities of the material of adhesive phase 13 can be measured using flux tester.Specifically For, can to the adhesive phase 13 that thickness is 15mm, using flux tester (Shimadzu Corporation. manufacture, CFT-100D), melt viscosity is measured with the condition of 10 DEG C loading 50kgf, 50~120 DEG C of temperature range, heating rate/min.
(2-3) average linear expansion coefficient
In present embodiment, average linear expansion coefficient of the solidfied material of the material of adhesive phase 13 at 0~130 DEG C is constituted The upper limit value of (hereinafter, sometimes referred to simply as " average linear expansion coefficient ") be preferably 45ppm hereinafter, particularly preferably 35ppm hereinafter, Further preferably 25ppm or less.If average linear expansion coefficient be above-mentioned upper limit value hereinafter, if the adhesive that is made of solidfied material Layer 13 and the difference of the linear expansion coefficient of semiconductor chip become smaller, based on the difference can reduce adhesive phase 13 and semiconductor chip it Between issuable stress.The three-dimensionally integrated laminate circuits sheet for manufacturing 1,2 of present embodiment can improve semiconductor core as a result, The mutual connection reliability of piece, especially shows high connection reliability in the temperature cycling test shown in embodiment.
On the other hand, the lower limiting value of average linear expansion coefficient is not particularly limited, but from the angle of film formative, excellent It is selected as 5ppm or more, more preferably 10ppm or more.
Herein, constituting the average linear expansion coefficient of the material of adhesive phase 13 can be surveyed using thermo-mechanical analysis device It is fixed.Specifically, after forming the adhesive phase 13 that thickness is 45 μm on base material, made by the processing carried out 1 hour with 160 DEG C Adhesive phase 13 cure to obtain solidfied material, using thermo-mechanical analysis device (Bruker AXS companies manufacture, TMA4030SA), with loading 2g, the condition of 5 DEG C 0~300 DEG C of temperature range, heating rate/min, it is swollen that line is measured to the solidfied material Swollen coefficient.0~130 DEG C of average linear expansion coefficient can be calculated by the measurement result.
(2-4) glass transition temperature
In present embodiment, the lower limiting value of the glass transition temperature (Tg) of the solidfied material of the material of adhesive phase 13 is constituted Preferably 150 DEG C or more, further preferably 200 DEG C or more, particularly preferably 240 DEG C or more.If the vitrifying of solidfied material turns Temperature is above-mentioned lower limiting value or more, then in temperature cycling test, solidfied material is indeformable and does not allow to be also easy to produce stress, so it is excellent Choosing.On the other hand, the upper limit value of the glass transition temperature of solidfied material is not particularly limited, but from inhibit solidfied material embrittlement angle Degree sets out, and preferably 350 DEG C hereinafter, more preferably 300 DEG C or less.
Herein, the glass transition temperature for constituting the solidfied material of the material of adhesive phase 13 is to be surveyed using dynamic viscoelastic Instrument (TA Instruments. manufactures, DMA Q800) is determined with frequency 11Hz, 10 μm of amplitude, 3 DEG C/min of heating rate, by 0 It is when DEG C being warming up to 300 DEG C and measuring the viscoplasticity based on stretch mode, the maximum point of tan δ (loss modulus/storage modulus) Temperature.
(2-5) 5% Mass lost temperature
In the three-dimensionally integrated laminate circuits sheet for manufacturing 1,2 of present embodiment, the solidification of the material of adhesive phase 13 is constituted The 5% Mass lost temperature of object measured based on thermogravimetric amount is preferably 350 DEG C or more, particularly preferably 360 DEG C or more.By making The 5% Mass lost temperature is 350 DEG C or more, and the solidfied material of adhesive phase 13 is excellent to the patience of high temperature.Therefore, in stacking electricity In the manufacture on road etc., even if the solidfied material is exposed at high temperature, it can also inhibit to contain ingredient breakdown with the solidfied material Volatile ingredient generation etc., the performance of laminate circuits can be well maintained.In addition, though the 5% Mass lost temperature The upper limit is not particularly limited, but the 5% Mass lost temperature is preferably generally 500 DEG C or less.
Herein, 5% Mass lost temperature can be measured using the hot thermogravimetric amount of differential while measurement device.It is specific and Speech after forming the adhesive phase 13 that thickness is 45 μm on base material, makes adhesive phase 13 by carrying out processing in 1 hour with 160 DEG C Solidification is to obtain solidfied material, according to JIS K7120：1987 and using the hot thermogravimetric amount of differential simultaneously measurement device (Shimadzu Corporation. manufactures, DTG-60), using nitrogen as inflow gas, and with gas inflow velocity 100ml/ The condition of 20 DEG C min, heating rate/min are warming up to 550 DEG C by 40 DEG C, to carry out thermogravimetric amount measurement to the solidfied material. Based on obtained thermogravimetric curves, temperature (5% mass of the Mass lost 5% relative to the quality at a temperature of 100 DEG C is found out Reduce temperature).
(2-6) storage modulus
In the three-dimensionally integrated laminate circuits sheet for manufacturing 1,2 of present embodiment, at 23 DEG C after the solidification of adhesive phase 13 Storage modulus be preferably 1.0 × 102MPa or more, particularly preferably 1.0 × 103MPa or more.In addition, the storage modulus is preferred It is 1.0 × 105MPa is hereinafter, particularly preferably 1.0 × 104MPa or less.By making the storage modulus be above range, manufacturing When laminate circuits, laminated body made of semiconductor chip and the adhesive phase 13 being sliced are alternately laminated has good intensity. Even if as a result, in further laminated semiconductor chip or when operating the laminated body, it can also be well maintained laminated body State can manufacture the laminate circuits with excellent quality.
Herein, the storage modulus at 23 DEG C after the solidification of adhesive phase 13 can using Measurement of Dynamic Viscoelasticity instrument and It measures.Specifically, after forming the adhesive phase 13 that thickness is 45 μm on base material, made by carrying out processing in 1 hour with 160 DEG C Adhesive phase 13 cures to obtain solidfied material, uses Measurement of Dynamic Viscoelasticity instrument (TA Instruments. manufactures, DMA Q800) with the condition of frequency 11Hz, 10 μm of amplitude, 3 DEG C/min of heating rate, which is measured and is warming up to 300 by 0 DEG C DEG C when the viscoplasticity based on stretch mode.The energy storage mould at 23 DEG C after adhesive phase solidification can be read by the measurement result It measures (MPa).
(2-7) heat generation starting temperature and fever peak temperature based on differential scanning calorimetry
In the three-dimensionally integrated laminate circuits sheet for manufacturing 1,2 of present embodiment, adhesive phase 13 before curing passes through differential It is preferably 70 DEG C~150 to scan the heat generation starting temperature (TS) that calorimetric analysis (DSC) method is measured with 10 DEG C/min of heating rate In the range of DEG C, in the range of particularly preferably 100 DEG C~150 DEG C, in the range of further preferably 120 DEG C~150 DEG C.It is logical Crossing makes the heat generation starting temperature (TS) be above range, for example, adhesive phase 13 can be inhibited such as to be used cutting blade Stage solidification when generated hot when cutting semiconductor wafer, being not intended to, and the storage stability of sheet for manufacturing 1,2 is also excellent It is different.In particular, in order to manufacture laminate circuits, after the multiple stackings of semiconductor chip, make to be present between semiconductor chip When multiple adhesive phases 13 cure together, the rank that is not intended to of the adhesive phase 13 before semiconductor chip stacking is completed can be inhibited Section solidification.
In the three-dimensionally integrated laminate circuits sheet for manufacturing 1,2 of present embodiment, adhesive phase 13 before curing passes through difference Show that the fever peak temperature (TP) that scanning calorimetric analysis (DSC) method is measured with 10 DEG C/min of heating rate preferably generates heat + 5~60 DEG C of beginning temperature (TS), particularly preferably TS+5~50 DEG C, further preferably TS+10~40 DEG C.By making the fever Peak temperature (TP) is above range, and when making adhesive phase 13 cure, the time since cured until completion becomes It is shorter.In general, using adhesive as NCF come when manufacturing laminate circuits, the solidification of adhesive needs the time.Therefore, it is laminated The production operation time (tact time) in the manufacture of circuit provides according to the hardening time of adhesive in most cases.Cause This can effectively shorten the production operation time by making the 13 cured time of adhesive phase short as described above.Especially manufacture When laminate circuits, for the efficient activity of processing procedure, sometimes after multiple stackings by semiconductor chip (temporarily placing), make to be present in Multiple adhesive phases 13 between semiconductor chip finally cure together.Even if in this case, by making the hair Heat emission peak temperature (TP) is above range, can inhibit the adhesive phase being present between the semiconductor chip of processing procedure initial stage stacking 13 stage solidification being not intended to before semiconductor chip stacking is completed.
Here, above-mentioned heat generation starting temperature and above-mentioned fever peak temperature can be measured using differential scanning calorimeter. Specifically, the adhesive phase 13 of thickness 15mm is used differential scanning calorimeter (TA Instruments. manufactures, Q2000) It is heated to 300 DEG C from room temperature for 10 DEG C/min with heating rate.It can find out what fever started according to thus obtained DSC curve Temperature (heat generation starting temperature) (TS) and fever peak temperature (TP).
The thickness etc. of (2-8) adhesive phase
In the three-dimensionally integrated laminate circuits sheet for manufacturing 1,2 of present embodiment, the thickness (T2) of adhesive phase 13 is preferably 2 μm or more, particularly preferably 5 μm or more, further preferably 10 μm or more.In addition, the thickness (T2) be preferably 500 μm hereinafter, Particularly preferably 300 μm hereinafter, further preferably 100 μm or less.By make adhesive phase 13 thickness (T2) be 2 μm with On, the through electrode or convex block that can will be present in semiconductor chip are embedded to well in adhesive phase 13.In addition, by making to glue The thickness (T2) of mixture layer 13 is for 500 μm hereinafter, being glued via adhesive phase 13 in the semiconductor chip that will have through electrode When conjunction, adhesive phase 13 will not exceedingly be oozed out in side, can manufacture the high semiconductor device of reliability.In addition, adhesive The average value when thickness (T2) of layer 13 is to being measured with total 100 points of the intervals 50mm in sheet for manufacturing 1.
In the three-dimensionally integrated laminate circuits sheet for manufacturing 1,2 of present embodiment, the standard of the thickness (T2) of adhesive phase 13 Deviation is for 2.0 μm hereinafter, preferably 1.8 μm hereinafter, particularly preferably 1.6 μm or less.If the standard deviation is more than 2.0 μm, When using sheet for manufacturing 1,2 by the through electrode of semiconductor crystal wafer or convex block embedment adhesive phase 13, gap is easy tod produce, And be difficult to that the thickness of the adhesive phase 13 of composition laminate circuits and the thickness of laminate circuits itself is made to be uniform, as a result, stacking The exothermicity of circuit becomes inadequate.Especially because laminate circuits are by the way that semiconductor chip and adhesive phase more than 13 to be laminated And obtain, therefore the standard deviation of the thickness (T2) of adhesive phase 13 be more than 2.0 μm when, obtained laminate circuits thickness it is equal Even property is damaged, which can not reach good exothermicity.In addition, the standard deviation of the thickness (T2) of adhesive phase 13 Shown in poor assay method test example as be described hereinafter.
Have in the three-dimensionally integrated laminate circuits sheet for manufacturing 2 of the second embodiment of base material 11, the thickness of adhesive phase 13 It is preferably 0.01 or more to spend (T2) relative to the ratio (T2/T1) of the thickness (T1) of base material 11, and particularly preferably 0.1 or more, into one Step preferably 0.4 or more.In addition, this than (T2/T1) be preferably 1.5 hereinafter, particularly preferably 1.0 hereinafter, further preferably 0.9 or less.By making this than (T2/T1) be above range, the thickness of base material 11 and adhesive phase 13, which balances, becomes good, will make It makes and is attached at the operational excellent of semiconductor die bowlder with piece 2, and be easy to adjust the attaching adaptability when attaching.As a result, The attaching can be carried out well, can manufacture the laminate circuits with excellent quality.Especially by make this than (T2/T1) It is 0.01 or more, the relative thickness of the base material 11 in sheet for manufacturing 1 becomes smaller, can press down the relative stiffness of sheet for manufacturing 1 It is made as relatively low.As a result, sheet for manufacturing 1 is attached at semiconductor die bowlder, it is easy to will be present in the perforation of semiconductor crystal wafer Electrode or convex block are embedded to well in adhesive phase 13.On the other hand, by making this than (T2/T1) be 1.5 hereinafter, sheet for manufacturing The relative thickness of base material 11 in 1 becomes larger, can the relative stiffness of sheet for manufacturing 1 be maintained higher.As a result, manufacture It is excellent with the operability of piece 1, it is easy to sheet for manufacturing 1 being attached at semiconductor crystal wafer.In addition, the thickness (T1) of base material 11 is to system It makes with average value when being measured with total 100 points of the intervals 50mm in piece 1.
2. adhering agent layer
(1) material
Have in the three-dimensionally integrated laminate circuits sheet for manufacturing 2 of the second embodiment of adhering agent layer 12, adhering agent layer 12 It can be made of non-curable sticker, or can be also made of curability sticker.As described later, by the three-dimensional of present embodiment When integrated laminate circuits sheet for manufacturing 2 is used for the manufacturing method of laminate circuits, adhesive phase 13 is from base material 11 and adhering agent layer 12 Laminated body on remove.Therefore, from being easy to carry out the angle of the stripping, adhering agent layer 12 is preferably by curability sticker structure At, and adhesion strength is reduced by solidification.
When adhering agent layer 12 is made of curability sticker, which can be energy ray-curable sticker, or It is alternatively Thermocurable sticker.Herein, in order to make adhering agent layer 12 cure in the different stages with adhesive phase 13, work as bonding When oxidant layer 13 has Thermocurable, adhering agent layer 12 is preferably made of energy ray-curable sticker, when adhesive phase 13 has When having energy ray-curable, adhering agent layer 12 is preferably made of Thermocurable sticker.But since adhesive phase 13 is based on The reason and it is preferred that have Thermocurable, therefore adhering agent layer 12 is preferably made of energy ray-curable sticker.
As above-mentioned non-curable sticker, it is however preferred to have the non-curable of required adhesion strength and releasable is adhered Agent can be used for example acrylic compounds sticker, rubber sticker, silicone sticker, carbamates sticker, gather Esters sticker, glymes sticker etc..Wherein, from it is in effective stage being not intended to inhibited such as cutting action, Adhering agent layer 12 and the angle of the stripping on the interface of adhesive phase 13 are set out, preferably acrylic compounds sticker.
As above-mentioned energy ray-curable sticker, can be based on the polymer with energy ray-curable at The energy ray-curable sticker divided, or (do not have energy ray curing with non-energy ray-curable polymer Property polymer) with at least more than one the monomer of energy ray-curable group and/or the mixture of oligomer be The energy ray-curable sticker of principal component.Further, it is also possible to be polymer and non-energy with energy ray-curable The mixture of ray-curable polymer, or polymer with energy ray-curable with at least more than one Energy ray-curable group monomer and/or oligomer mixture, or their 3 kinds mixtures.
The above-mentioned polymer with energy ray-curable is preferably to be imported with energy ray-curable on side chain (methyl) acrylate (co) polymer of functional group's (energy ray-curable group).The polymer, which preferably makes to have, contains official Can group monomeric unit acrylic copolymer, with there is the change containing unsaturated group of functional group being bonded with the functional group Close substance obtained from object reaction.
As the monomer and/or oligomer of the above-mentioned energy ray-curable group at least more than one, for example, can To use the ester etc. of polyalcohol and (methyl) acrylic acid.
As non-energy ray-curable component of polymer, it is, for example, possible to use described have the monomer list containing functional group The acrylic copolymer of member.
(2) physical property etc.
In the three-dimensionally integrated laminate circuits sheet for manufacturing 2 of present embodiment, storage modulus of the adhering agent layer 12 at 23 DEG C Preferably 1 × 103Pa or more, particularly preferably 1 × 104Pa or more.In addition, the storage modulus is preferably 1 × 109Pa is hereinafter, spy It You Xuanwei 1 × 108Pa or less.In addition, when adhering agent layer 12 is made of curability sticker, which refers to solidification Preceding storage modulus.By making storage modulus of the adhering agent layer 12 at 23 DEG C be above range, it is attached at by sheet for manufacturing 2 Semiconductor die bowlder, the through electrode or convex block that can will be present in semiconductor crystal wafer are embedded to well in adhesive phase 13.This Outside, when carrying out grinding back surface using the face for not forming convex block of 1,2 pair of semiconductor crystal wafer of sheet for manufacturing, semiconductor die can be inhibited The generation of round warpage or recess.In addition, dynamic viscoelastic can be used for example in storage modulus of the adhering agent layer 12 at 23 DEG C Measurement device (TA Instruments. manufactures, ARES) is with frequency 1Hz, -50~150 DEG C of measuring temperature range, heating rate 3 DEG C/condition of min is measured.
The thickness of adhering agent layer 12 is not particularly limited, but is for example preferably 1 μm or more, particularly preferably 10 μm or more. In addition, such as preferably 100 μm of the thickness is hereinafter, particularly preferably 50 μm or less.By making the thickness of adhering agent layer 12 be 1 μm More than, adhering agent layer 12 can play good adhesion strength.In addition, by making the thickness for 100 μm hereinafter, can inhibit to adhere Oxidant layer 12 becomes unwanted thickness, can reduce cost.
3. base material
(1) material
Have in the three-dimensionally integrated laminate circuits sheet for manufacturing 2 of the second embodiment of base material 11, as composition base material 11 Material, be not particularly limited.But sheet for manufacturing 2 is set as the one-piece type bonding sheet of cutting sheet (cutting-tube core bonding pad) When, the material for constituting base material 11 is preferably the material of the base material commonly used in constituting cutting sheet.For example, as such base material 11 Material, polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, chloroethylene copolymer can be enumerated Object, polyethylene terephthalate, polybutylene terephthalate (PBT), polyurethane, ethylene vinyl acetate copolymer, ion Polymer, ethylene-(methyl) acrylic copolymer, ethylene-(methyl) acrylate copolymer, polystyrene, vinyl gather different Pentadiene, makrolon, polyolefin etc. can use the mixture of one or more of they.
In addition, when sheet for manufacturing 2 is provided as grinding back surface piece one-piece type bonding sheet, the material for constituting base material 11 is preferably logical It is commonly used for constituting the material of the base material of grinding back surface piece.For example, the material as such base material 11, can enumerate by poly- pair The material that the resins such as ethylene terephthalate, polyethylene, polypropylene, vinyl-vinyl acetate copolymer are constituted, can use The mixture of one or more of they.
In order to improve the adherence with adhering agent layer 12, the face of 12 side of adhering agent layer of base material 11 can also be implemented at priming paint The surface treatments such as reason, sided corona treatment, corona treatment.
(2) physical property etc.
In the three-dimensionally integrated laminate circuits sheet for manufacturing 2 of present embodiment, tensile modulus of elasticity of the base material 11 at 23 DEG C Preferably 100MPa or more, particularly preferably 200MPa or more, further preferably 300MPa or more.In addition, the tensile elasticity Modulus is preferably 5000MPa hereinafter, particularly preferably 1000MPa is hereinafter, further preferably 400MPa or less.By making base material 11 tensile modulus of elasticity at 23 DEG C is that sheet for manufacturing 2 is attached to semiconductor die bowlder in above range, can be there will be It is embedded to well in adhesive phase 13 in the through electrode or convex block of semiconductor crystal wafer.In addition, sheet for manufacturing 2 is set as cutting sheet When one-piece type bonding sheet, by making tensile modulus of elasticity of the base material 11 at 23 DEG C within the above range, expand by sheet for manufacturing 2 When opening up and expanding the mutual interval of semiconductor chip, base material 11 is not easy to break, so it is preferred that.In addition, base material 11 is at 23 DEG C Tensile modulus of elasticity can use cupping machine according to JISK 7127：1999 and measure.
The thickness (T1) of base material 11 is not particularly limited, such as preferably 10 μm or more, particularly preferably 15 μm or more.This Outside, the thickness (T1) is for example preferably with 500 μm hereinafter, particularly preferably 100 μm or less.By the thickness (T1) for making base material 11 For above range, the ratio (T2/ relative to the thickness (T1) of base material 11 by the thickness (T2) of the adhesive phase 13 can be easy T1 value) is set in the range, and the operability that sheet for manufacturing 1,2 is attached to semiconductor die bowlder is excellent.As a result, it is possible to Effectively manufacture the laminate circuits of good quality.
4. stripping film
The composition of stripping film 14 is arbitrary, such as can enumerate polyethylene terephthalate, poly terephthalic acid fourth The plastic foil of the polyolefin films such as the polyester films such as diol ester, polyethylene naphthalate, polypropylene, polyethylene etc..It is preferred that it Release surface (face contacted with adhesive phase 13) implement lift-off processing.As the remover for lift-off processing, for example, can Enumerate the remover of silicone, fluorine class, chain alkyl class etc..
The thickness of stripping film is not particularly limited, but usually 20 μm or more, 250 μm or less.
5. the manufacturing method of three-dimensionally integrated laminate circuits sheet for manufacturing
The three-dimensionally integrated laminate circuits sheet for manufacturing 1 of first embodiment can with previous three-dimensionally integrated laminate circuits The same mode of sheet for manufacturing and manufacture.For example, when manufacture has the three-dimensionally integrated laminate circuits sheet for manufacturing 1 of stripping film 14, It can be contained by preparing：The conducting filler, constitute adhesive phase 13 other materials and further contained according to required The coating fluid of some solvents or decentralized medium, and use die coating machine, curtain coater, flush coater, slit coater, knife type coater etc. By the coating solution in the release surface of stripping film 14, to form film, make the dried coating film, thus, it is possible to manufacture manufacture With piece 2.As long as coating fluid can be coated, character is not particularly limited, and will be used to form adhesive phase 13 sometimes Ingredient contain as solute, contain sometimes as dispersate.Stripping film 14 can be removed as process material, Adhesive phase 13 can also be protected until being attached on semiconductor crystal wafer.
In addition, the layer as the stripping film 14 for being laminated with 2 layers respectively on the two sides of three-dimensionally integrated laminate circuits sheet for manufacturing 1 The manufacturing method of stack, by coating solution in, to form film, made it dry in the release surface of the stripping film 14 from And form the laminated body that is made of adhesive phase 13 and stripping film 14, by the adhesive phase 13 of the laminated body with stripping film 14 Opposite face paste invests in the release surface of other stripping films 14, to obtain by 14/ adhesive phase of stripping film, 13/ peel plate, 14 structure At laminated body.Stripping film 14 in the laminated body can be removed as process material, and adhesive phase 13 can also be protected straight To being attached on semiconductor crystal wafer.
The three-dimensionally integrated laminate circuits sheet for manufacturing 2 of second embodiment can with previous three-dimensionally integrated laminate circuits 2 identical mode of sheet for manufacturing and manufacture.For example, can by manufacture respectively adhesive phase 13 and stripping film 14 laminated body, And the laminated body of adhering agent layer 12 and base material 11, and these are laminated in such a way that adhesive phase 13 is contacted with adhering agent layer 12 It shows consideration for and closes, to arrive sheet for manufacturing 2.
It is used to form the coating fluid of adhesive phase 13 by preparing, and is coated with using the coating method In in the release surface of stripping film 14, to form film and make the dried coating film, adhesive phase 13 and stripping film 14 can be obtained Laminated body.
As above-mentioned solvent, the organic solvent etc. of toluene, ethyl acetate, methyl ethyl ketone can be enumerated.By blending this A little organic solvents can further suppress the thickness (T2) of adhesive phase 13 to which the solution of appropriate solid component concentration be made Deviation can be effectively formed the adhesive phase 13 with the standard deviation about thickness (T2).Especially from making painting The angle of cloth liquid even spread is set out, and the solid component concentration of coating fluid is preferably 5 mass % or more, particularly preferably 10 matter Measure % or more.In addition, from same angle, which is preferably 55 mass % hereinafter, preferably 50 matter Measure % or less.By make the solid component concentration be 5 mass % or more, can inhibit when forming film contraction etc. generation, And it is easy to keep solvent fully dry, it is easier to inhibit the thickness of adhesive phase 13 or the deviation of physical property.As a result, being easy to bond The standard deviation of the thickness (T2) of oxidant layer 13 adjusts within the scope of described.In addition, by making the solid component concentration be 55 matter % is measured hereinafter, the cohesion of the filler in coating fluid can be inhibited, is easy, by coating fluid liquor charging, to inhibit to hang down with coating direction The generation of the crawling (laterally uneven) continuously generated on straight direction, the thickness that can further suppress adhesive phase 13 are inclined The generation of difference.The viscosity at 25 DEG C of above-mentioned coating fluid measured using Brookfield viscometer is preferably 20mPas or more, special It You Xuanwei not 25mPas or more.In addition, the viscosity is preferably 500mPas hereinafter, particularly preferably 100mPas or less.
By preparing containing the material for constituting adhering agent layer 12 and as needed further containing solvent or decentralized medium Coating fluid, is coated on the one side of base material 11 to form film and make the dried coating film using the coating method, by This can obtain the laminated body of adhering agent layer 12 and base material 11.In addition, its of the laminated body as adhering agent layer 12 and base material 11 His manufacturing method, can also be by forming adhering agent layer 12, then by the sticker in the release surface of process stripping film Layer 12 is transferred to the one side of base material 11, and process is removed with stripping film from adhering agent layer 12, thus obtains adhering agent layer 12 With the laminated body of base material 11.
[manufacturing methods of three-dimensionally integrated laminate circuits]
Using the three-dimensionally integrated laminate circuits sheet for manufacturing 1,2 of present embodiment, three-dimensionally integrated laminate circuits can be manufactured. Hereinafter, the example to its manufacturing method illustrates.
First, the three-dimensionally integrated laminate circuits sheet for manufacturing 1,2 of present embodiment is attached to half with through electrode The one side of semiconductor wafer.Specifically, the face paste of 13 side of adhesive phase of three-dimensionally integrated laminate circuits sheet for manufacturing 1,2 is invested The one side of semiconductor crystal wafer.
In addition, intensity is weaker sometimes for the semiconductor crystal wafer with through electrode.It therefore, also can be by via temporary fixed material And be fixed on the supporters such as support glass, to enhance semiconductor crystal wafer.In this case, by the semiconductor crystal wafer of the laminated body After the face of side is bonded with three-dimensionally integrated laminate circuits sheet for manufacturing 1,2, supporter is removed together with temporary fixed material.
Using present embodiment three-dimensionally integrated laminate circuits sheet for manufacturing 1 when, cutting sheet is further laminated.The situation Under, can cutting sheet be first attached at semiconductor crystal wafer, then sheet for manufacturing 1 is attached to the opposite with cutting sheet of the semiconductor crystal wafer Side face.In addition it is also possible to which sheet for manufacturing 1 is first attached at semiconductor crystal wafer, then cutting sheet is attached at the semiconductor die The face of the round side opposite with sheet for manufacturing 1.Alternatively, can also be obtained from sheet for manufacturing 1 be attached at semiconductor crystal wafer The attached cutting sheet of face paste of 1 side of sheet for manufacturing of laminated body.On the other hand, using the three-dimensionally integrated stacking of second embodiment electricity When the sheet for manufacturing 2 of road, it is not necessary that cutting sheet is further laminated, cutting action below can be carried out on the sheet for manufacturing 2.
Then, semiconductor crystal wafer is cut to an other chip (cutting action).At this point, semiconductor crystal wafer cut off Meanwhile also adhesive phase 13 being cut off.The cutting-off method of wafer is not particularly limited, and can use known various cuttings Method carries out.For example, the method for cutting off semiconductor crystal wafer using cutting blade can be enumerated.Further, it is also possible to using Other cutting methods such as laser cutting.
After cutting action, semiconductor chip is picked up.At this point, the semiconductor chip is to be pasted with the adhesive being sliced Layer 13 state and be picked.That is, being pasted with adhering agent layer or three-dimensional collection of the semiconductor chip of adhesive phase 13 from cutting sheet At being stripped on the adhering agent layer 12 of laminate circuits sheet for manufacturing 2.In addition, adhering agent layer 12 is by energy ray-curable sticker When composition, to 12 irradiation energy ray of adhering agent layer preferably before pickup.As a result, since the adhesion strength of the sticker reduces, because The pickup of this semiconductor chip becomes easy.In addition, can also be according to required before pickup, by extending cutting sheet or three-dimensional collection Expand the mutual interval of semiconductor chip at laminate circuits sheet for manufacturing 2.
Then, the semiconductor chip with adhesive phase is placed in circuit board.Semiconductor with adhesive phase Chip by the electrode of semiconductor chip side and the electrode in circuit board be it is opposite in a manner of be aligned, to be placed in circuit base On plate.
Further, it after the semiconductor chip with adhesive phase being carried out heating pressurization with circuit board, is cooled down.By This, semiconductor chip bonds, the core in the electrode and circuit board of semiconductor chip with circuit board via adhesive phase 13 The electrode of piece equipped section is electrically engaged via the solder projection for being formed in semiconductor core on piece.The condition of welding depends on being made When metal composites, for example, Sn-Ag, preferably heated 1~30 second with 200~300 DEG C.
After being welded, the adhesive phase 13 between semiconductor chip and circuit board is made to cure.Such as it can lead to It crosses and heats 1~120 minute with 100~200 DEG C to be cured.In addition, the curing process can also carry out under an increased pressure. In addition, at the end of working as the solidification of the adhesive phase 13 in above-mentioned welding sequence, the curing process can be also omitted.
Then, it in the semiconductor core on piece being bonded in as described above in circuit board, is laminated and new has adhesive phase Semiconductor chip.At this point, with the face of 13 side of adhesive phase in the new semiconductor chip with adhesive phase, be laminated in The face of the side opposite with circuit board of semiconductor chip in circuit board contacts and the through electrode of two semiconductor chips The mode being electrically connected to each other is laminated.Then, the through electrode of the new semiconductor chip being stacked and it is being laminated in circuit It is welded between the through electrode of semiconductor chip on substrate, further makes the bonding between these semiconductor chips Oxidant layer 13 cures.The solidification of welding and adhesive phase 13 at this time can profit with the aforedescribed process and condition and carry out.As a result, can Access laminated body made of being laminated with two semiconductor chips in circuit board.
Be repeated it is as described above, on the semiconductor chip on being laminated in circuit board stacking with adhesive phase Semiconductor chip and the cured process for carrying out welding and adhesive phase 13, the solidfied material that can be utilized adhesive phase 13 will The laminate circuits that multiple semiconductor chips are bonded.In the laminate circuits, by making adhesive phase 13 contain conducting filler, And the standard deviation of the thickness (T2) of adhesive phase 13 is the range, the exothermicity of laminate circuits is excellent.Therefore, by using The three-dimensionally integrated laminate circuits sheet for manufacturing 1,2 of present embodiment, can manufacture the laminate circuits with high reliability.
In addition, in the manufacturing method of laminate circuits discussed above, although as soon as a semiconductor chip is often laminated, it carries out Welding and the solidification of adhesive phase 13, but for the efficient activity of processing procedure, can also after multiple semiconductor chips are laminated, Last simultaneously carries out consolidating for the welding between these semiconductor chips and the adhesive phase between these semiconductor chips 13 Change.
The implementation described above be for easy understanding the present invention and records, be not configured to limit of the invention and remember It carries.Therefore, each element disclosed in the above embodiment includes to belong to whole design alterations or equal of the technical scope of the present invention The objective of equal objects.
Embodiment
Hereinafter, by showing embodiment and test example etc., the present invention will be described in more detail, but the present invention not by Any restriction of following test examples etc..
[Examples 1 to 7, comparative example 1]
Using methyl ethyl ketone by the composition containing constituent shown in table 1 with solid component concentration be 40 mass % Mode be diluted, obtained coating fluid.Viscosity of the coating fluid at 25 DEG C is measured using Brookfield viscometer, result is 50mPa·s.By the coating solution in stripping film (LINTEC CORPORATION. manufactures, SP- through silicone-treated PET381031 on), and it is using baking oven that obtained film is 1 minute dry with 100 DEG C, and it is 45 μm to result in by thickness The first layer stack that constitutes of adhesive phase and stripping film.
It will make 10 matter of 80 mass parts of 2-EHA, 10 mass parts of methyl acrylate and acrylic acid 2- hydroxy methacrylates Measure acrylic copolymer (weight average molecular weight made of part copolymerization：70 ten thousand) 100 mass parts (solid constituent scaled values；Following phase Together), with isocyanates crosslinking agent (Nippon Polyurethane Industry Co., Ltd. manufacture, CORONATE L) 10 mass parts mix, and are prepared for adhesion agent composition.
Adhesion agent composition is coated on the ethylene-methacrylic acid copolymer as base material obtained from will be as described above (EMAA) film (thickness：100 μm, tensile modulus of elasticity：In one side 230MPa), so as to form film.Obtained as a result, by The second laminated body that the adhering agent layer that thickness is 10 μm is constituted with base material.The adhering agent layer is measured at 23 DEG C using aftermentioned method Under storage modulus, as a result 4.6 × 105Pa。
Then, by by the face of the adhesive phase side of first layer stack, with the face paste of the adhering agent layer side of the second laminated body It closes, results in three-dimensionally integrated laminate circuits sheet for manufacturing.
[comparative example 2]
Using methyl ethyl ketone by the composition containing constituent shown in table 1 with solid component concentration be 55% mass Mode be diluted, obtained coating fluid.Viscosity of the coating fluid at 25 DEG C is measured using Brookfield viscometer, as a result 150mPa·s.Other than using the coating fluid to form adhesive phase, three-dimensional collection has been obtained in a manner of similarly to Example 1 At laminate circuits sheet for manufacturing.
Herein, that Details as Follows is described for constituent shown in table 1.
High molecular weight components
Bisphenol-A (BPA)/Bisphenol F (BPF) copoly type phenoxy resin：Tohto Kasei Co., Ltd. manufacture, product Title " ZX-1356-2 ", 71 DEG C of glass transition temperature, weight average molecular weight 60,000
Thermocurable ingredient
Epoxy resin 1：Three (hydroxyphenyl) methane type solid epoxies, JAPAN EPOXY RESINS CO.LTD. systems It makes, name of product " E1032H60 ", 5 weight % reduce 350 DEG C of temperature, solid, 60 DEG C of fusing point
Epoxy resin 2：Bis-F types liquid epoxy resin, JAPAN EPOXY RESINS CO.LTD. manufactures, ProductName Claim " YL-983U ", epoxide equivalent 184
■ epoxy resin 3：Long-chain Bis-F modified versions epoxy resin, JAPAN EPOXY RESINS CO.LTD. manufactures, production The name of an article claims " YL-7175 "
Curing catalysts
■2MZA-PW：2,4- diamino -6- [2 '-methylimidazolyls-(1 ')]-ethyl-s-triazine, SHIKOKU CHEMICALS CORPORATION. manufactures, name of product " 2MZA-PW ", 250 DEG C of fusing point
Flux component
■ rosin derivatives：124~134 DEG C of Arakawa Chemical Industries system, softening point
Filler
■ conducting fillers (spherical alumina)；Spherical alumina, Denka Company Limited manufactures, ProductName Claim " DAM-0 ", 3 μm of average grain diameter, thermal conductivity 40W/mK
■ conducting fillers (spherical zinc oxide)：Spherical zinc oxide, SAKAI CHEMICAL INDUSTRY CO., LTD. Manufacture, 0.6 μm of average grain diameter, thermal conductivity 54W/mK
■ conducting fillers (boron nitride)：Boron nitride, SHOWA DENKO K.K. manufactures, name of product " UHP-2 ", shape Shape：The thermal conductivity 200W/mK of plate, 11.8 μm of average grain diameter, radius-thickness ratio 11.2, long axis direction
■ fused silica fillers：3 μm of average grain diameter, thermal conductivity 2W/mK
In addition, the storage modulus about the adhering agent layer at 23 DEG C, by by the multiple stacking by systems of adhering agent layer The laminated body for making the adhering agent layer that thickness is 800 μm, to the laminated body of the adhering agent layer to be punched to the circle of a diameter of 10mm Obtained from measurement sample, using measurement of dynamic viscoelasticity device (TA Instruments. manufacture, ARES) with frequency 1Hz, - 50~150 DEG C of measuring temperature range, the condition of 3 DEG C/min of heating rate measure storage modulus (Pa).
The measurement of [test example 1] thermal conductivity
For each Examples and Comparative Examples, using methyl ethyl ketone by the composition containing constituent shown in table 1 It is diluted in such a way that solid component concentration is 40 mass %, and is coated on the stripping film (LINTEC through silicone-treated CORPORATION. manufacture, SP-PET381031) on, it is using baking oven that obtained film is 1 minute dry with 100 DEG C, thus Form the adhesive phase that thickness is 40 μm.It will be carried out in such a way that thickness is 2mm according to adhesive phase obtained from the step It is multilayer laminated.The discoid adhesive phase of a diameter of 5cm is punched by the laminated body that the thickness is 2mm, as measuring Sample.
After heating the sample 2 hours with 130 DEG C to make it cure, measuring thermal conductivity device (EKO is used Instruments manufactures, HC-110) determine thermal conductivity (W/m ■ K).As a result it is shown in table 2.
The measurement of the thickness of [test example 2] adhesive phase and the standard deviation of the thickness
For the first layer stack manufactured in Examples and Comparative Examples, to the thickness (T2) of adhesive phase, with the intervals 50mm It is total to determine at 100 points.The average value (μm) of thickness (T2) and the standard deviation of thickness (T2) have been calculated based on the measurement result (μm).As a result it is shown in table 2.
The evaluation of the exothermicity of [test example 3] based on temperature cycling test
Prepare be formed with convex block on one side and be formed with the wafer for evaluation circle of liner in another side, be justified using full-automatic polycrystalline Chip mounter (LINTEC CORPORATION. manufactures, RAD-2700F/12) is three-dimensionally integrated by what is manufactured in Examples and Comparative Examples The formation that laminate circuits sheet for manufacturing is attached at wafer for evaluation circle has the face of convex block side, and is further fixed in ring-type Frame.
Then, adhesive phase is cut together using Full-automatic cutting sawing (DISCO CORPORATION. manufactures, DFD651) And wafer for evaluation circle, to which slice is the chip for the size for being 7.3mm × 7.3mm with vertical view.
Then, it using flip chip bonder (manufacture of TORAY ENGINEERING Co., Ltd.s, FC3000W), picks up simultaneously After the adhesive phase and chip that are sliced, by its face-down bonding in substrate.Then, by the core with adhesive phase of the second layer Piece face-down bonding is on the first layer chip being temporarily positioned on substrate.The process is repeated to overlap on substrate upper layer to manufacture Semiconductor device made of the chip of 5 layers of meter.
In the environment of being set as a cycle with -55 DEG C, 10 minutes and 125 DEG C, 10 minutes, obtained semiconductor is filled Set the temperature cycling test for being carried out 1000 cycles.For the semiconductor device before and after the experiment, digital versatile is used Table measure semiconductor chip between connection resistance value, and determine experiment after semiconductor device connection resistance value relative to The change rate of the connection resistance value of semiconductor device before experiment.Then, connection is had rated reliably according to evaluation criteria below Property.As a result it is shown in table 2.
○：The change rate for connecting resistance value is 20% or less.
×：The change rate for connecting resistance value is more than 20%.
The evaluation of [test example 4] imbedibility
Multiple semiconductor devices have been manufactured by the method described in test example 3.Using digital micro-analysis sem observation by these Whether 4 sides of elective 5 semiconductor devices in semiconductor device, confirmation crack at convex block and to viscous The embedment state of convex block in mixture layer, while determining the thickness of the stacking direction in respective face.Based on these as a result, according to Evaluation criteria below has rated burying for the convex block of the three-dimensionally integrated laminate circuits sheet for manufacturing obtained in Examples and Comparative Examples Entering property.As a result it is shown in table 2.
○：5 semiconductor devices do not crack at convex block all, convex block is embedded in well in adhesive phase and The thickness of stacking direction is identical between 4 sides.
×：In 5 semiconductor devices, is cracked at convex block or convex block is not embedded to fully in adhesive phase or layer The thickness in folded direction differs between 4 sides.
[table 1]
[table 2]
As shown in Table 2, the adhesive phase in the three-dimensionally integrated laminate circuits sheet for manufacturing of embodiment have 0.5W/m ■ K with On excellent thermal conductivity, and the standard deviation of the thickness (T2) of adhesive phase be 2.0 μm or less.Moreover, implementing for using Laminate circuits made of obtained three-dimensionally integrated laminate circuits sheet for manufacturing in example, it is excellent to confirm exothermicity, temperature cycles examination The result tested is good, and the imbedibility of convex block is also excellent.
On the other hand, the thermal conductivity of the adhesive phase of the three-dimensionally integrated laminate circuits sheet for manufacturing of comparative example is 0.3W/m ■ K, it is insufficient value, the exothermicity using laminate circuits made of the sheet for manufacturing is also insufficient.Further, about comparative example The standard deviation of 2 three-dimensionally integrated laminate circuits sheet for manufacturing, the thickness (T2) of adhesive phase is 2.5 μm, laminate circuits Exothermicity is insufficient, and the imbedibility of convex block is poor.
Industrial applicibility
The exothermicity of the three-dimensionally integrated laminate circuits sheet for manufacturing of the present invention is excellent, can be suitable for manufacture with highly reliable The laminate circuits of property.
Reference sign
1、2：Three-dimensionally integrated laminate circuits sheet for manufacturing；
11：Base material；
12：Adhering agent layer；
13：Adhesive phase；
14：Stripping film.

Claims (16)

1. a kind of three-dimensionally integrated laminate circuits sheet for manufacturing, between multiple semiconductor chips with through electrode, For the multiple semiconductor chip mutually to be bonded and three-dimensionally integrated laminate circuits are made, which is characterized in that
The three-dimensionally integrated laminate circuits sheet for manufacturing at least has the adhesive phase of curability,
Described adhesive layer contains conducting filler,
The standard deviation of the thickness (T2) of described adhesive layer is 2.0 μm or less.
2. three-dimensionally integrated laminate circuits sheet for manufacturing according to claim 1, which is characterized in that the conducting filler by Material selected from metal oxide, silicon carbide, carbide, nitride and metal hydroxides is constituted.
3. three-dimensionally integrated laminate circuits sheet for manufacturing according to claim 1 or 2, which is characterized in that described adhesive layer In the conducting filler content be 35 mass % or more, 95 mass % or less.
4. three-dimensionally integrated laminate circuits sheet for manufacturing described in any one of claim 1 to 3, which is characterized in that described Thermal conductivity of the conducting filler at 25 DEG C is 10W/mK or more.
5. three-dimensionally integrated laminate circuits sheet for manufacturing according to any one of claims 1 to 4, which is characterized in that described The average grain diameter of conducting filler is 0.01 μm or more 20 μm or less.
6. three-dimensionally integrated laminate circuits sheet for manufacturing according to any one of claims 1 to 5, which is characterized in that described Thermal conductivity after adhesive phase solidification is 0.5W/mK or more 8.0W/mK or less.
7. according to three-dimensionally integrated laminate circuits sheet for manufacturing according to any one of claims 1 to 6, which is characterized in that constitute The material of described adhesive layer contains Thermocurable ingredient, high molecular weight components and curing catalysts.
8. three-dimensionally integrated laminate circuits sheet for manufacturing according to any one of claims 1 to 7, which is characterized in that described The glass transition temperature of high molecular weight components is 50 DEG C or more.
9. according to three-dimensionally integrated laminate circuits sheet for manufacturing according to any one of claims 1 to 8, which is characterized in that constitute The material of described adhesive layer contains flux component.
10. according to three-dimensionally integrated laminate circuits sheet for manufacturing according to any one of claims 1 to 9, which is characterized in that described The thickness of adhesive phase is 2 μm or more 500 μm or less.
11. according to three-dimensionally integrated laminate circuits sheet for manufacturing according to any one of claims 1 to 10, which is characterized in that institute Three-dimensionally integrated laminate circuits sheet for manufacturing is stated to be further equipped with：Adhering agent layer and base material, wherein the adhering agent layer is layered in institute A surface side of adhesive phase is stated, the base material is layered in the surface side opposite with described adhesive layer of the adhering agent layer.
12. three-dimensionally integrated laminate circuits sheet for manufacturing according to claim 11, which is characterized in that the thickness of the base material It is 10 μm or more 500 μm or less.
13. three-dimensionally integrated laminate circuits sheet for manufacturing according to claim 11 or 12, which is characterized in that described adhesive The thickness (T2) of layer is 0.01 or more 5.0 or less relative to the ratio (T2/T1) of the thickness (T1) of the base material.
14. the three-dimensionally integrated laminate circuits sheet for manufacturing according to any one of claim 11~13, which is characterized in that institute It is 1 × 10 to state storage modulus of the sticker at 23 DEG C3Pa or more 1 × 109Pa or less.
15. the three-dimensionally integrated laminate circuits sheet for manufacturing according to any one of claim 11~14, which is characterized in that institute It is 100MPa or more 5000MPa or less to state tensile modulus of elasticity of the base material at 23 DEG C.
16. a kind of manufacturing method of three-dimensionally integrated laminate circuits, which is characterized in that including following process：
By the one side of the described adhesive layer of three-dimensionally integrated laminate circuits sheet for manufacturing according to any one of claims 1 to 10 Or the described adhesive layer of the three-dimensionally integrated laminate circuits sheet for manufacturing described in any one of claim 11 to 15 with it is described It adhering agent layer opposite face, the process that is bonded at least one side for the semiconductor crystal wafer for having through electrode；
The semiconductor crystal wafer is cut together with the described adhesive layer of the three-dimensionally integrated laminate circuits sheet for manufacturing, to Slice is the process of the semiconductor chip with adhesive phase；
Will multiple semiconductor chips for having adhesive phase made of slice, be electrically connected to each other with the through electrode and institute It states adhesive phase and carries out multiple stackings with the mode that the semiconductor chip is alternately arranged, to obtain semiconductor chip laminate Process；And
The described adhesive layer of the semiconductor chip laminate is set to cure, to which the semiconductor chip laminate will be constituted The process that the semiconductor chip is bonded to each other.
CN201780004484.9A 2016-04-05 2017-02-13 Sheet for manufacturing three-dimensional integrated laminated circuit and method for manufacturing three-dimensional integrated laminated circuit Active CN108463527B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016076188 2016-04-05
JP2016-076188 2016-04-05
PCT/JP2017/005142 WO2017175481A1 (en) 2016-04-05 2017-02-13 Sheet for producing three-dimensional integrated laminated circuit and method for producing three-dimensional integrated laminated circuit

Publications (2)

Publication Number Publication Date
CN108463527A true CN108463527A (en) 2018-08-28
CN108463527B CN108463527B (en) 2021-02-09

Family

ID=60000324

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780004484.9A Active CN108463527B (en) 2016-04-05 2017-02-13 Sheet for manufacturing three-dimensional integrated laminated circuit and method for manufacturing three-dimensional integrated laminated circuit

Country Status (4)

Country Link
KR (1) KR102625368B1 (en)
CN (1) CN108463527B (en)
TW (1) TWI722115B (en)
WO (1) WO2017175481A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114555739A (en) * 2019-09-30 2022-05-27 富士胶片株式会社 Adhesive sheet and electronic component
CN114555739B (en) * 2019-09-30 2024-05-14 富士胶片株式会社 Adhesive sheet and electronic component

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022230899A1 (en) * 2021-04-28 2022-11-03

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2100933A1 (en) * 2008-03-13 2009-09-16 Nitto Denko Corporation Double-sided pressure-sensitive adhesive sheet and method for fixing plastic film
CN101939825A (en) * 2008-02-07 2011-01-05 住友电木株式会社 Film for semiconductor, method for manufacturing semiconductor device and semiconductor device
JP2011063678A (en) * 2009-09-16 2011-03-31 Toray Ind Inc Adhesive composition for semiconductor and semiconductor device using the composition
CN103154070A (en) * 2010-10-18 2013-06-12 三菱化学株式会社 Filler composition for space between layers of three-dimensional integrated circuit, coating fluid, and process for producing three-dimensional integrated circuit
CN103443919A (en) * 2011-03-31 2013-12-11 三菱化学株式会社 Three-dimensional integrated circuit laminate and interlayer filler material for three-dimensional integrated circuit laminate
CN103965797A (en) * 2013-01-29 2014-08-06 日东电工株式会社 Bonding Tape

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010010368A (en) * 2008-06-26 2010-01-14 Sumitomo Bakelite Co Ltd Semiconductor device, and manufacturing method of the same
JP2011187571A (en) * 2010-03-05 2011-09-22 Nitto Denko Corp Dicing die-bonding film
JP2012216837A (en) * 2011-03-31 2012-11-08 Mitsubishi Chemicals Corp Three-dimensional integrated circuit laminate
WO2014069638A1 (en) * 2012-11-05 2014-05-08 リンテック株式会社 Adhesive sheet

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101939825A (en) * 2008-02-07 2011-01-05 住友电木株式会社 Film for semiconductor, method for manufacturing semiconductor device and semiconductor device
EP2100933A1 (en) * 2008-03-13 2009-09-16 Nitto Denko Corporation Double-sided pressure-sensitive adhesive sheet and method for fixing plastic film
JP2011063678A (en) * 2009-09-16 2011-03-31 Toray Ind Inc Adhesive composition for semiconductor and semiconductor device using the composition
CN103154070A (en) * 2010-10-18 2013-06-12 三菱化学株式会社 Filler composition for space between layers of three-dimensional integrated circuit, coating fluid, and process for producing three-dimensional integrated circuit
CN103443919A (en) * 2011-03-31 2013-12-11 三菱化学株式会社 Three-dimensional integrated circuit laminate and interlayer filler material for three-dimensional integrated circuit laminate
CN103965797A (en) * 2013-01-29 2014-08-06 日东电工株式会社 Bonding Tape

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
梁基照: "《高分子复合材料传热学导论》", 31 March 2013, 华南理工大学出版社 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114555739A (en) * 2019-09-30 2022-05-27 富士胶片株式会社 Adhesive sheet and electronic component
CN114555739B (en) * 2019-09-30 2024-05-14 富士胶片株式会社 Adhesive sheet and electronic component

Also Published As

Publication number Publication date
WO2017175481A1 (en) 2017-10-12
KR102625368B1 (en) 2024-01-15
CN108463527B (en) 2021-02-09
TW201802973A (en) 2018-01-16
TWI722115B (en) 2021-03-21
KR20180131529A (en) 2018-12-10

Similar Documents

Publication Publication Date Title
JP5157229B2 (en) Adhesive sheet
TWI583759B (en) Adhesive resin composition for semiconductor, adhesive film for semiconductor and dicing die-bonding film
TWI362708B (en) A manufacturing method of semiconductor device
JP6670156B2 (en) Circuit member connection sheet and method of manufacturing semiconductor device
CN109111867A (en) Cut die bonding film
JP5390209B2 (en) Thermosetting die bond film
JP5499516B2 (en) Adhesive composition, circuit member connecting adhesive sheet, and method for manufacturing semiconductor device
CN105027271A (en) Underfill sheet, underfill sheet integrated with tape for grinding rear surface, underfill sheet integrated with dicing tape, and method for manufacturing semiconductor device
JP5691244B2 (en) Film adhesive, adhesive sheet and semiconductor device
JP6827851B2 (en) Manufacturing method of circuit member connection sheet and semiconductor device
CN108463527A (en) The manufacturing method of three-dimensionally integrated laminate circuits sheet for manufacturing and three-dimensionally integrated laminate circuits
JP2012153851A (en) Semiconductor device and film-shaped adhesive
JP5879675B2 (en) Adhesive film for semiconductor, wiring board for semiconductor mounting, semiconductor device, and adhesive composition
KR102571295B1 (en) Sheet for manufacturing a three-dimensional integrated laminated circuit and method for manufacturing a three-dimensional integrated laminated circuit
JP2009267321A (en) Adhesive sheet, one-piece sheet, semiconductor device, and method of manufacturing semiconductor device
CN108475670A (en) The manufacturing method of three-dimensionally integrated laminate circuits sheet for manufacturing and three-dimensionally integrated laminate circuits
JP6174293B1 (en) Sheet for manufacturing three-dimensional integrated multilayer circuit and method for manufacturing three-dimensional integrated multilayer circuit
JP6768188B2 (en) Adhesive composition for adhesive film and its manufacturing method
CN108283002A (en) Circuit member resin for bonding piece
JP2012094586A (en) Manufacturing method of semiconductor device
JP5637069B2 (en) Adhesive sheet
CN108323171A (en) Circuit member resin for bonding piece
TWI797910B (en) Die-cut die-bonding film and manufacturing method thereof, and semiconductor package and manufacturing method thereof
KR102342479B1 (en) Dicing die-bonding film, dicing die-bonding tape and method for manufacturing semiconductor device
WO2016080731A1 (en) Resin composition for semiconductor adhesion, and adhesive film for semiconductor

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant