CN108447800A - 薄膜电池的制造方法 - Google Patents
薄膜电池的制造方法 Download PDFInfo
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- CN108447800A CN108447800A CN201810097035.XA CN201810097035A CN108447800A CN 108447800 A CN108447800 A CN 108447800A CN 201810097035 A CN201810097035 A CN 201810097035A CN 108447800 A CN108447800 A CN 108447800A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 148
- 238000000034 method Methods 0.000 claims abstract description 34
- 238000002360 preparation method Methods 0.000 claims abstract description 23
- 238000005192 partition Methods 0.000 claims description 29
- 239000010410 layer Substances 0.000 claims description 20
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 20
- 239000011159 matrix material Substances 0.000 claims description 14
- 239000002346 layers by function Substances 0.000 claims description 5
- 230000000712 assembly Effects 0.000 claims description 4
- 238000000429 assembly Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 14
- 239000002699 waste material Substances 0.000 abstract description 6
- 210000004027 cell Anatomy 0.000 description 37
- 239000010408 film Substances 0.000 description 24
- 238000005520 cutting process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Automation & Control Theory (AREA)
- Secondary Cells (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
Description
Claims (10)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810097035.XA CN108447800B (zh) | 2018-01-31 | 2018-01-31 | 薄膜电池的制造方法 |
PCT/CN2018/089661 WO2019148724A1 (zh) | 2018-01-31 | 2018-06-01 | 用于薄膜电池制备的承载件及薄膜电池的制备方法 |
EP18785240.5A EP3748699A1 (en) | 2018-01-31 | 2018-06-01 | Carrier for thin film battery preparation and method for preparing thin film battery |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810097035.XA CN108447800B (zh) | 2018-01-31 | 2018-01-31 | 薄膜电池的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108447800A true CN108447800A (zh) | 2018-08-24 |
CN108447800B CN108447800B (zh) | 2019-12-10 |
Family
ID=63191531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810097035.XA Active CN108447800B (zh) | 2018-01-31 | 2018-01-31 | 薄膜电池的制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108447800B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109545694A (zh) * | 2018-11-13 | 2019-03-29 | 无锡中微高科电子有限公司 | 一种破损基板的模封方法 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4481230A (en) * | 1983-10-27 | 1984-11-06 | Rca Corporation | Method of depositing a semiconductor layer from a glow discharge |
JP2004031463A (ja) * | 2002-06-24 | 2004-01-29 | Matsushita Electric Ind Co Ltd | 半導体集積回路の検査方法 |
CN1607423A (zh) * | 2003-10-14 | 2005-04-20 | Lg.菲利浦Lcd株式会社 | 制造各种尺寸的液晶显示板的方法 |
TW200527520A (en) * | 2004-02-02 | 2005-08-16 | Chi Mei Optoelectronics Corp | Smart cut of mother glass |
CN1790660A (zh) * | 2004-10-04 | 2006-06-21 | 东京応化工业株式会社 | 基板承载台 |
CN1971848A (zh) * | 2006-12-13 | 2007-05-30 | 友达光电股份有限公司 | 可挠性阵列基板的制造方法 |
CN202150465U (zh) * | 2011-08-10 | 2012-02-22 | 温州索乐新能源科技有限公司 | 碎片拼接的太阳能硅片 |
JP2015079072A (ja) * | 2013-10-16 | 2015-04-23 | キヤノン株式会社 | 基板割れ処理システムを搭載した露光装置 |
CN104716225A (zh) * | 2013-12-17 | 2015-06-17 | 晶科能源有限公司 | 晶硅电池片回收再利用方法 |
CN104718519A (zh) * | 2013-08-23 | 2015-06-17 | 林龙辰 | 工艺模块及其制造方法和利用该工艺模块的基板加工方法 |
CN104903262A (zh) * | 2013-03-21 | 2015-09-09 | 日本电气硝子株式会社 | 玻璃基板生产管理系统以及玻璃基板生产管理方法 |
CN105358495A (zh) * | 2013-08-27 | 2016-02-24 | 日本电气硝子株式会社 | 玻璃基板生产管理系统及玻璃基板生产管理方法 |
CN107263755A (zh) * | 2016-03-30 | 2017-10-20 | 株式会社迪思科 | 卡盘工作台 |
-
2018
- 2018-01-31 CN CN201810097035.XA patent/CN108447800B/zh active Active
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4481230A (en) * | 1983-10-27 | 1984-11-06 | Rca Corporation | Method of depositing a semiconductor layer from a glow discharge |
JP2004031463A (ja) * | 2002-06-24 | 2004-01-29 | Matsushita Electric Ind Co Ltd | 半導体集積回路の検査方法 |
CN1607423A (zh) * | 2003-10-14 | 2005-04-20 | Lg.菲利浦Lcd株式会社 | 制造各种尺寸的液晶显示板的方法 |
TW200527520A (en) * | 2004-02-02 | 2005-08-16 | Chi Mei Optoelectronics Corp | Smart cut of mother glass |
CN1790660A (zh) * | 2004-10-04 | 2006-06-21 | 东京応化工业株式会社 | 基板承载台 |
CN1971848A (zh) * | 2006-12-13 | 2007-05-30 | 友达光电股份有限公司 | 可挠性阵列基板的制造方法 |
CN202150465U (zh) * | 2011-08-10 | 2012-02-22 | 温州索乐新能源科技有限公司 | 碎片拼接的太阳能硅片 |
CN104903262A (zh) * | 2013-03-21 | 2015-09-09 | 日本电气硝子株式会社 | 玻璃基板生产管理系统以及玻璃基板生产管理方法 |
CN104718519A (zh) * | 2013-08-23 | 2015-06-17 | 林龙辰 | 工艺模块及其制造方法和利用该工艺模块的基板加工方法 |
CN105358495A (zh) * | 2013-08-27 | 2016-02-24 | 日本电气硝子株式会社 | 玻璃基板生产管理系统及玻璃基板生产管理方法 |
JP2015079072A (ja) * | 2013-10-16 | 2015-04-23 | キヤノン株式会社 | 基板割れ処理システムを搭載した露光装置 |
CN104716225A (zh) * | 2013-12-17 | 2015-06-17 | 晶科能源有限公司 | 晶硅电池片回收再利用方法 |
CN107263755A (zh) * | 2016-03-30 | 2017-10-20 | 株式会社迪思科 | 卡盘工作台 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109545694A (zh) * | 2018-11-13 | 2019-03-29 | 无锡中微高科电子有限公司 | 一种破损基板的模封方法 |
Also Published As
Publication number | Publication date |
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CN108447800B (zh) | 2019-12-10 |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Rongchang East Street 7 hospital 6 Building 3001 room. Patentee after: Beijing Dingrong Photovoltaic Technology Co.,Ltd. Address before: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Rongchang East Street 7 hospital 6 Building 3001 room. Patentee before: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210326 Address after: Room 201, Building A, 1 Qianwan Road, Qianhai Shenzhen-Hong Kong Cooperation Zone, Shenzhen, Guangdong Province Patentee after: Shenzhen Zhengyue development and Construction Co.,Ltd. Address before: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Rongchang East Street 7 hospital 6 Building 3001 room. Patentee before: Beijing Dingrong Photovoltaic Technology Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210830 Address after: No.66210, 3rd floor, Pudong Free Trade Zone, Shanghai, China Patentee after: Shanghai zuqiang Energy Co.,Ltd. Address before: Room 201, Building A, 1 Qianwan Road, Qianhai Shenzhen-Hong Kong Cooperation Zone, Shenzhen, Guangdong Province Patentee before: Shenzhen Zhengyue development and Construction Co.,Ltd. |
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PP01 | Preservation of patent right |
Effective date of registration: 20240930 Granted publication date: 20191210 |