CN108445960A - A kind of bandgap voltage reference of high power supply voltage fluctuation range - Google Patents
A kind of bandgap voltage reference of high power supply voltage fluctuation range Download PDFInfo
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- CN108445960A CN108445960A CN201810676844.6A CN201810676844A CN108445960A CN 108445960 A CN108445960 A CN 108445960A CN 201810676844 A CN201810676844 A CN 201810676844A CN 108445960 A CN108445960 A CN 108445960A
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- pmos tube
- tube
- common
- nmos tube
- supply voltage
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
Abstract
The present invention relates to IC design technical fields, a kind of bandgap voltage reference of high power supply voltage fluctuation range is provided, including 3 grades of common-source common-gate current mirror structures and bias structure, the grid voltage biasing of 3 grades of common-source common-gate current mirror structures is provided by bias structure, 3 grades of common-source common-gate current mirror structures include the first PMOS transistor, second PMOS transistor, third PMOS transistor, 4th PMOS transistor, first NMOS transistor, second NMOS transistor, third NMOS transistor and the 4th NMOS transistor, present invention improves over level-one common-source common-gate current mirror structures, increase mains fluctuations range limit, to increase whole mains fluctuations range.
Description
Technical field
The present invention relates to IC design technical fields, and in particular to a kind of band gap base of high power supply voltage fluctuation range
Reference voltage source.
Background technology
Band-gap reference circuit is widely used in analog circuit, digital circuit and Digital Analog Hybrid Circuits, makes band-gap reference
The supply voltage range that voltage source can work normally plays vital shadow to the performance and service life of whole system
It rings.Traditional single order band-gap reference circuit generates positive temperature coefficient electric current due to generally use level-one common-source common-gate current mirror,
The upper limit of mains fluctuations range is caused to be restricted and cannot reach very high.
Common bandgap voltage reference is made of PTAT voltage and CTAT voltage two parts, as shown in Figure 1.CTAT voltage can
Obtained with being managed by BJT, and PTAT voltage can by be biased in BJT pipes under different current densities two VBE difference come
It realizes.BJT pipe △ VBE relational expressions are as follows：
A PTAT current source is can be obtained by with △ VBE divided by resistance R：
And the relationship between the VBE and exhausted temperature T of a BJT pipe can use formula (3) to indicate：
VG(Tr) it is bandgap voltage reference of the conductor material under reference temperature；Q is the charge of an electronics；N is that technique is normal
Number；K is Boltzmann constant；T is absolute temperature；IcIt is collector current；VBE(Tr) it is base stage and hair under reference temperature
Emitter-base bandgap grading pressure difference.Last higher order term very little in formula (3), can ignore, this has just obtained required CTAT voltage.Therefore, base
Accurate output voltage can be indicated with formula (4)：
VBER=VBE+kΔVBE (4)
Since CTAT voltage VBE has negative temperature coefficient, and PTAT voltage △ VBE have positive temperature coefficient, as long as therefore K
Selection is suitable, so that it may so that VBERTemperature coefficient be zero.
For the supply voltage range that can be worked normally, by taking classical single order voltage-mode band-gap reference circuit as an example.
As shown in Fig. 2, M1, M2, M4, M5 form level-one common-source common-gate current mirror, to control, Q1 and Q2 electric currents are equal thus the positive temperature electricity of generation
Stream.Its supply voltage range lower limit and the upper limit can be calculated respectively：
VDD lower limits：VUnder DD=VTH+Vdsat+VBE, wherein VTHFor the threshold voltage of metal-oxide-semiconductor, VdsatFor overdriving for metal-oxide-semiconductor
Voltage.
When supply voltage increases x, the electric current that the overdrive voltage of M2 and M4 also increases x, M2 and M4 also slightly increases, and recognizes
Not change when the error of curent change can consider when within 2%.Assuming that the most serious offense of this current error is caused to be driven
Dynamic voltage increment is Vmax, and supply voltage at this time is the upper limit, VOn DD=VTH+Vdsat+Vmax+VBE。
It can obtain the supply voltage of Fig. 2 this classical single order band-gap reference ranging from：
VTH+Vdsat+VBE＜ VDD＜ VTH+Vdsat+Vmax+VBE
Invention content
The technical issues of solution
In view of the deficiencies of the prior art, the present invention provides a kind of bandgap voltage references of high power supply voltage fluctuation range
Source improves level-one common-source common-gate current mirror structure, increases mains fluctuations range limit, to increase whole electricity
Source scope range of the fluctuation of voltage.
Technical solution
In order to achieve the above object, the present invention is achieved by the following technical programs：
A kind of bandgap voltage reference of high power supply voltage fluctuation range, including 3 grades of common-source common-gate current mirror structures and partially
Structure is set, the grid voltage biasing of 3 grades of common-source common-gate current mirror structures is provided by the bias structure.
Further, 3 grades of common-source common-gate current mirror structures include the first PMOS tube, the second PMOS tube, third
PMOS tube, the 4th PMOS tube, the first NMOS tube, the second NMOS tube, third NMOS tube and the 4th NMOS tube.
Further, the source electrode of first PMOS tube and the source electrode of the second PMOS tube connection supply voltage VDD.
Further, the drain electrode of first PMOS tube is connected with the source electrode of the third PMOS tube, and described second
The drain electrode of PMOS tube is connected with the source electrode of the 4th PMOS tube.
Further, first NMOS tube and third PMOS tube drain electrode are connected with each other, second NMOS tube
It drains and is connected with each other with the 4th PMOS tube.
Further, the source electrode of first NMOS tube is connected with the drain electrode of the third NMOS tube, and described second
The source electrode of NMOS tube is connected with the drain electrode of the 4th NMOS tube.
Further, the grid of third PMOS tube and the 4th PMOS tube is connected to grid and the leakage of the 5th PMOS tube
The bias voltage of pole, the third PMOS tube and the 4th PMOS tube is provided by the 5th PMOS tube.
Further, the grid of third NMOS tube and the 4th NMOS tube is connected to the grid of the 5th NMOS tube, described
The bias voltage of third NMOS tube and the 4th NMOS tube is provided by the 5th NMOS tube.
Advantageous effect
The present invention provides a kind of bandgap voltage references of high power supply voltage fluctuation range, with existing known technology phase
Than of the invention has the advantages that：
1, present invention improves over level-one common-source common-gate current mirror structures, use 3 grades of common-source common-gate current mirror structures, and
In order to ensure that the lower limit of mains fluctuations range is not raised, also the gate bias inside current mirror is adjusted so that
It increases mains fluctuations range limit in the case where mains fluctuations range lower limit is basically unchanged, to increase
Whole mains fluctuations range, significantly increases the service life of circuit, expands the use environment of circuit, make it
It can flexibly be integrated into various IC chips.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
Obtain other attached drawings according to these attached drawings.
Fig. 1 is the band-gap reference principle schematic of the present invention；
Fig. 2 is the benchmark core electrical block diagram of the present invention；
Fig. 3 is the band-gap reference circuit structural schematic diagram of the present invention；
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
The every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
Embodiment：
The bandgap voltage reference of a kind of high power supply voltage fluctuation range of the present embodiment, with reference to figure 3, including 3 grades
The grid voltage biasing of common-source common-gate current mirror structure and bias structure, 3 grades of common-source common-gate current mirror structures is carried by bias structure
For.
3 grades of common-source common-gate current mirror structures include the first PMOS tube, the second PMOS tube, third PMOS tube, the 4th PMOS tube,
First NMOS tube, the second NMOS tube, third NMOS tube and the 4th NMOS tube.
The source electrode of first PMOS tube and the source electrode of the second PMOS tube connection supply voltage VDD.
The drain electrode of first PMOS tube is connected with the source electrode of third PMOS tube, the drain electrode of the second PMOS tube and the 4th PMOS tube
Source electrode be connected.
First NMOS tube and the drain electrode of third PMOS tube are connected with each other, and the second NMOS tube is mutually interconnected with the drain electrode of the 4th PMOS tube
It connects.
The source electrode of first NMOS tube is connected with the drain electrode of third NMOS tube, the source electrode of the second NMOS tube and the 4th NMOS tube
Drain electrode be connected.
The grid of third PMOS tube and the 4th PMOS tube is connected to grid and the drain electrode of the 5th PMOS tube, third PMOS tube
It is provided by the 5th PMOS tube with the bias voltage of the 4th PMOS tube.
The grid of third NMOS tube and the 4th NMOS tube is connected to the grid of the 5th NMOS tube, third NMOS tube and the 4th
The bias voltage of NMOS tube is provided by the 5th NMOS tube.
PMOS tube M1-M4 and NMOS tube M5-M8 constitutes 3 grades of common-source common-gate current mirror structures of the present invention in Fig. 3, and M1 is
First PMOS tube, M2 are the second PMOS tube, and M3 is third PMOS tube, and M4 is the 4th PMOS tube, and M12 is the 5th PMOS tube, and M5 is
First NMOS tube, M6 are the second NMOS tube, and M7 is third NMOS tube, and M8 is the 4th NMOS tube, and M11 is the 5th NMOS tube, M3, M4
Grid voltage biasing with M5, M6 is provided by M12 and M10 respectively.We can be found that multistage cascode structure effectively increases
The big upper limit of mains fluctuations ranges, and special biasing provides lower limit and use so that mains fluctuations range
The classical single order band-gap reference circuit of 1 grade of cascode structure is essentially identical.
Principle explanation：For the mains fluctuations range of the circuit of this secondary design, circuit that we can be according to fig. 3
Structure derives its lower limit, due to the use of special bias structure, VUnder DD=VTH+2Vdsat+VBE, special biasing is not used than it
3 grades of cascode structure lower limit VUnder DD=2VTH+2Vdsat+VBEReduce the threshold voltage V of a metal-oxide-semiconductorTH, and to MOS works
An overdrive voltage V for skilldsatThan one threshold voltage VTHIt is much smaller, so the mains fluctuations range of this secondary design
Lower limit merely adds a V than classical circuitdsat, and can ignore substantially not for the increment of the upper limit of this incremental raio
Meter can be seen that in the discussion of this upper limit below.
By the derivation of the supply voltage range of classical single order band-gap reference it is known that obtain the electricity of circuit
Source upper voltage limit range, it is necessary to extrapolate the overdrive voltage increment V for causing maximum current errormax.From the figure 3, it may be seen that when electricity
When source voltage increases x, the overdrive voltage of M7, M5 and increase x accordingly, similarly to the electricity of overdriving of another branch M2, M4
It presses and also increases x.We, which also assume that, causes the maximum overdrive voltage increment of 2% current error to be Vmax, then power supply at this time
The increment of voltage is two metal-oxide-semiconductor overdrive voltage increments and as 2Vmax, in this way we can obtain this secondary design circuit
Mains fluctuations range limit：
VOn DD=VTH+2Vdsat+2Vmax+VBE
It can be found that a V for a MOS techniques according to us are testedmaxAbout 2V or so, and a VdsatOnly
There is 200mV or so, so for the increment of comparison mains fluctuations range lower limit, the upper limit promotion of this secondary design is more shown
It writes.So we may safely draw the conclusion, the mains fluctuations range of the single order band-gap reference normal work of this secondary design is than it
Traditional structure has great promotion.And it is shown according to experimental result, the supply voltage ranging from 2.5- of this structural support
5.5V。
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also include other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although with reference to the foregoing embodiments
Invention is explained in detail, it will be understood by those of ordinary skill in the art that：It still can be to aforementioned each implementation
Technical solution recorded in example is modified or equivalent replacement of some of the technical features；And these modification or
It replaces, the spirit and scope for various embodiments of the present invention technical solution that it does not separate the essence of the corresponding technical solution.
Claims (8)
1. a kind of bandgap voltage reference of high power supply voltage fluctuation range, which is characterized in that including 3 grades of common-source common-gate current mirrors
The grid voltage biasing of structure and bias structure, 3 grades of common-source common-gate current mirror structures is provided by the bias structure.
2. a kind of bandgap voltage reference of high power supply voltage fluctuation range according to claim 1, which is characterized in that institute
State 3 grades of common-source common-gate current mirror structures include the first PMOS tube, the second PMOS tube, third PMOS tube, the 4th PMOS tube, first
NMOS tube, the second NMOS tube, third NMOS tube and the 4th NMOS tube.
3. a kind of bandgap voltage reference of high power supply voltage fluctuation range according to claim 1 or 2, feature exist
In the source electrode of first PMOS tube and the source electrode connection supply voltage VDD of the second PMOS tube.
4. a kind of bandgap voltage reference of high power supply voltage fluctuation range according to claim 1 or 2, feature exist
In the drain electrode of first PMOS tube is connected with the source electrode of the third PMOS tube, the drain electrode of second PMOS tube and institute
The source electrode for stating the 4th PMOS tube is connected.
5. a kind of bandgap voltage reference of high power supply voltage fluctuation range according to claim 1 or 2, feature exist
In first NMOS tube and third PMOS tube drain electrode are connected with each other, second NMOS tube and the 4th PMOS tube
Drain electrode is connected with each other.
6. a kind of bandgap voltage reference of high power supply voltage fluctuation range according to claim 1 or 2, feature exist
In the source electrode of first NMOS tube is connected with the drain electrode of the third NMOS tube, the source electrode of second NMOS tube and institute
The drain electrode for stating the 4th NMOS tube is connected.
7. a kind of bandgap voltage reference of high power supply voltage fluctuation range according to claim 1 or 2, feature exist
In the grid of third PMOS tube and the 4th PMOS tube is connected to grid and the drain electrode of the 5th PMOS tube, the third PMOS tube
It is provided by the 5th PMOS tube with the bias voltage of the 4th PMOS tube.
8. a kind of bandgap voltage reference of high power supply voltage fluctuation range according to claim 1 or 2, feature exist
In the grid of third NMOS tube and the 4th NMOS tube is connected to the grid of the 5th NMOS tube, the third NMOS tube and the 4th
The bias voltage of NMOS tube is provided by the 5th NMOS tube.
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| CN201810676844.6A CN108445960A (en) | 2018-06-27 | 2018-06-27 | A kind of bandgap voltage reference of high power supply voltage fluctuation range |
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| CN201810676844.6A CN108445960A (en) | 2018-06-27 | 2018-06-27 | A kind of bandgap voltage reference of high power supply voltage fluctuation range |
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|---|---|---|---|---|
| US20030076157A1 (en) * | 2000-06-06 | 2003-04-24 | Tzi-Hsiung Shu | Circuit of bias-current sourcec with a band-gap design |
| JP2005332164A (en) * | 2004-05-19 | 2005-12-02 | Sony Corp | Bias circuit |
| US20100214013A1 (en) * | 2009-02-24 | 2010-08-26 | Fujitsu Limited | Reference signal generating circuit |
| CN102012715A (en) * | 2010-11-24 | 2011-04-13 | 天津泛海科技有限公司 | Band-gap reference voltage source compensated by using high-order curvature |
| US8111057B2 (en) * | 2008-04-25 | 2012-02-07 | National Taiwan University | Cascode current mirror circuit, bandgap circuit, reference voltage circuit having the cascode current mirror circuit and the bandgap circuit, and voltage stabilizing/regulating circuit having the reference voltage circuit |
| CN103389769A (en) * | 2013-07-24 | 2013-11-13 | 东南大学 | Band-gap reference voltage source with high power supply rejection ratio |
| CN103901935A (en) * | 2014-03-18 | 2014-07-02 | 苏州市职业大学 | Automatic biasing band-gap reference source |
| CN105242735A (en) * | 2015-10-27 | 2016-01-13 | 北京兆易创新科技股份有限公司 | Asymmetric voltage stabilizing circuit used for NAND FLASH |
| CN205750617U (en) * | 2016-04-20 | 2016-11-30 | 广东工业大学 | A kind of band-gap reference circuit of ultra-low temperature drift without amplifier |
-
2018
- 2018-06-27 CN CN201810676844.6A patent/CN108445960A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030076157A1 (en) * | 2000-06-06 | 2003-04-24 | Tzi-Hsiung Shu | Circuit of bias-current sourcec with a band-gap design |
| JP2005332164A (en) * | 2004-05-19 | 2005-12-02 | Sony Corp | Bias circuit |
| US8111057B2 (en) * | 2008-04-25 | 2012-02-07 | National Taiwan University | Cascode current mirror circuit, bandgap circuit, reference voltage circuit having the cascode current mirror circuit and the bandgap circuit, and voltage stabilizing/regulating circuit having the reference voltage circuit |
| US20100214013A1 (en) * | 2009-02-24 | 2010-08-26 | Fujitsu Limited | Reference signal generating circuit |
| CN102012715A (en) * | 2010-11-24 | 2011-04-13 | 天津泛海科技有限公司 | Band-gap reference voltage source compensated by using high-order curvature |
| CN103389769A (en) * | 2013-07-24 | 2013-11-13 | 东南大学 | Band-gap reference voltage source with high power supply rejection ratio |
| CN103901935A (en) * | 2014-03-18 | 2014-07-02 | 苏州市职业大学 | Automatic biasing band-gap reference source |
| CN105242735A (en) * | 2015-10-27 | 2016-01-13 | 北京兆易创新科技股份有限公司 | Asymmetric voltage stabilizing circuit used for NAND FLASH |
| CN205750617U (en) * | 2016-04-20 | 2016-11-30 | 广东工业大学 | A kind of band-gap reference circuit of ultra-low temperature drift without amplifier |
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Application publication date: 20180824 |