CN108439326A - A kind of micro-hotplate of silicon substrate structure and preparation method thereof - Google Patents
A kind of micro-hotplate of silicon substrate structure and preparation method thereof Download PDFInfo
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- CN108439326A CN108439326A CN201810398572.8A CN201810398572A CN108439326A CN 108439326 A CN108439326 A CN 108439326A CN 201810398572 A CN201810398572 A CN 201810398572A CN 108439326 A CN108439326 A CN 108439326A
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- 239000000758 substrate Substances 0.000 title claims abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 46
- 239000010703 silicon Substances 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 229910021426 porous silicon Inorganic materials 0.000 claims abstract description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- 238000009413 insulation Methods 0.000 claims abstract description 23
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 20
- 238000005516 engineering process Methods 0.000 claims abstract description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 6
- 239000013078 crystal Substances 0.000 claims abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 238000011161 development Methods 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 230000007797 corrosion Effects 0.000 abstract description 7
- 238000005260 corrosion Methods 0.000 abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 2
- 239000012141 concentrate Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 208000030208 low-grade fever Diseases 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003319 supportive effect Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000010339 dilation Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
Abstract
The invention discloses a kind of micro-hotplate of silicon substrate structure and preparation method thereof, the substrate of the micro-hotplate use crystal orientation for<100>Monocrystalline silicon, the substrate surface is silicon dioxide layer by being covered with porous silicon layer, heat insulation layer and heating zone, the heat insulation layer outside interior cause successively, and the heating zone is Pt electrodes；Wherein, substrate back is etched into hole with porous silicon layer.The micro-hotplate of the present invention further corrodes intermediate porous silicon layer on the basis of original corrosion.Heat insulation layer after corrosion, becomes larger with air contact area, because the heat conductivility of air is poor, it is possible to effectively prevent in the heat loss to silicon substrate of workspace；Newly-designed heater-type Pt electrodes can effectively concentrate on heat in working region, improve working efficiency.The preparation method is at low cost, stable processing technology, is easy to produce in batches.
Description
Technical field
The invention belongs to semiconductor transducer fields, and in particular to a kind of micro-hotplate of silicon substrate structure and preparation method thereof.
Background technology
The rapid development of industry also causes pollution while bringing considerable interests to environment.Plant emissions are harmful to
The toxic gas moment is in the health for endangering ecological environment and the mankind.In personal family, inflammable, explosion hazard gases equally exists
It threatens.Gas sensor is a kind of electronic nose, it is able to detect that the toxic and harmful gas in air, and the gas that will be detected
Ingredient and concentration are converted into electric signal.It is widely used in chemical industry, environment measuring, Disaster prevention and alarm etc..
In recent years, microelectromechanical systems (MEMS) technology obtains development energetically.MEMS technology is applied on a sensor,
It is current research hotspot both domestic and external.The gas sensor of micro-structure compares traditional gas sensor, it has small, work(
Consume it is low, can integrate, high sensitivity, the advantages such as at low cost.
The normal work of gas sensor is related with sensitive material thereon.When sensitive material is worked in air, air
In Oxygen Adsorption sensitive material surface electronics, to keep its negatively charged.Only at a high temperature of corresponding, sensitivity could be accelerated
Redox reaction between material and tested gas, such resistance characteristic will change.In the gas sensing of micro-structure
In device, micro-hotplate (MHP) provides corresponding high-temperature work environment for sensitive material.Therefore, it to be examined when designing low-grade fever harden structure
Considering working condition, whether the regional temperature of high temperature and work is evenly distributed.
Air has very low thermal coefficient, gives full play to advantage of the air in terms of thermal insulation, can effectively improve work
Make temperature, to reduce power consumption.
CN 102730621B disclose a kind of embedded silicon substrate micro-hotplate of heater strip and processing method, the micro-hotplate pass through
Heater strip is embedded in substrate insulation film layer, to improve stability of the micro-hotplate in hot operation.But the directly-heated type
Heating layer has the following disadvantages：Have an impact between signal circuit and heating circuit first；Secondly device dilation after heating holds
Easily cause poor contact.
CN 203998937U disclose a kind of MEMS silicon substrates micro-hotplate, which uses on the basis of above-mentioned patent
One layer of porous silicon layer is formed in surface of silicon, and layer of silicon dioxide film is covered as heat insulation layer on porous silicon layer, is risen
To better heat insulating effect, but and defect existing for directly-heated type heating layer is not solved.
Invention content
In view of the deficiencies of the prior art, it the invention discloses a kind of micro-hotplate of silicon substrate structure and preparation method thereof, is passing
One layer of porous silicon is newly increased between the silicon substrate and silica insulation of system, and more preferable performance is prepared using oxidized porous silicon method
Silica insulation；And newly-designed heater-type Pt electrodes, defect existing for directly-heated type heating layer is not only overcome, but also produce
Heat is more concentrated, and can make the temperature higher of workspace evenly.The micro-hotplate of the silicon substrate structure can reach higher temperature,
Therefore lower power consumption is only needed, normal working temperature can be reached.
The present invention is achieved by the following technical solutions：
A kind of micro-hotplate of silicon substrate structure, including substrate, the substrate use monocrystalline silicon, the substrate surface by interior cause outside
It is covered with porous silicon layer, heat insulation layer and heating zone successively, the heating zone is signal electrode and heating electrode；Wherein, substrate is carried on the back
Portion is etched into hole with porous silicon layer.
Preferably, the crystal orientation of the monocrystalline silicon is<100>.
Preferably, the heat insulation layer is silicon dioxide layer.
Preferably, the signal electrode and heating electrode are all made of Pt metal electrodes.
Preferably, the surface of the micro-hotplate entirety is covered with one layer of tin dioxide thin film.
A kind of preparation method of the micro-hotplate of silicon substrate structure, includes the following steps：
Step 1) prepares and cleaning silicon chip, as substrate；
Step 2) prepares porous silicon：Using anode oxidation method porous silicon layer is formed on substrate prepared by step 1)；
Step 3) prepares heat insulation layer：Hot oxygen is carried out to porous silicon layer prepared by step 2) in the oxidation furnace of PLC technology
Change, forms silica as heat insulation layer；
Step 4) sputters Pt electrodes：Positive photoresist is applied on heat insulation layer prepared by step 3), after adding mask, is carried out
Ultraviolet exposure, development, then magnetron sputtering Pt, using Ar bombardment by ions, Pt electrodes are made in stripping photoresist and its Pt above
As heating zone；
Step 5) corrodes substrate and porous silicon layer：Silicon lining under eroding heating zone from the back side using sodium hydroxide solution
Bottom, and the porous silicon layer at middle part is further corroded, the micro-hotplate of the silicon substrate structure is made.
The present invention compared with prior art, has the advantages that following prominent：
Increase by one layer of porous silicon between traditional silicon substrate and silica.Titanium dioxide is prepared in oxidation on porous silicon
Silicon.This silica compares other, and thickness increases, and can prevent silica from peeling off or crimping from surface.Traditional handicraft is micro-
Corrode into hole at the workspace back of hot plate so that heating work area keeps apart with the silicon substrate to play a supportive role, reduces heat transfer
Loss.The present invention further corrodes intermediate porous silicon layer on the basis of original corrosion.Heat insulation layer after corrosion, with air
Contact area becomes larger, because the heat conductivility of air is poor, it is possible to effectively prevent in the heat loss to silicon substrate of workspace.
Newly-designed Pt electrodes can effectively improve the temperature of working region, uniform temperature distribution.
1, heat insulation layer is with obvious effects.The porous silicon for newly adding one layer of heat-insulating property good, silicon dioxide thickness increase.
2, the heat production of Pt electrodes is more concentrated.Newly-designed Pt electrodes can make the temperature higher of workspace evenly.
3, lower power consumption, the Temperature Distribution for working at the same time area are also uniform.
4, at low cost, stable processing technology is easy to produce in batches.
Description of the drawings
Fig. 1 is the structural schematic diagram of micro-hotplate；
Fig. 2 is the structural schematic diagram that electrode and signal electrode are heated on micro-hotplate；
Fig. 3 is the FEM Numerical Simulation figure for applying the identical micro-hotplate for not increasing porous silicon when being thermally generated rate；
Fig. 4 is the FEM Numerical Simulation figure for applying the identical micro-hotplate for increasing porous silicon when being thermally generated rate；
Fig. 5 is the schematic diagram of the silicon chip after cleaning, drying；
Fig. 6 is the schematic diagram that porous silicon is prepared on silicon chip；
Fig. 7 is the schematic diagram that silica is prepared on porous silicon layer；
Fig. 8 is the schematic diagram for applying positive photoresist；
Fig. 9 is to add mask, the schematic diagram to its ultraviolet exposure；
Figure 10 is the schematic diagram to develop to the device after exposure；
Figure 11 is the schematic diagram that Pt is sputtered in device surface；
Figure 12 is the schematic diagram of stripping photoresist and extra Pt above；
Figure 13 is the schematic diagram of the silicon substrate under the anticorrosion work area of back；
Figure 14 is the schematic diagram for further corroding intermediate porous silicon.
In figure：1, silicon substrate；2, porous silicon；3, silica；4, signal electrode；5, electrode is heated；6, positive photoresist；
7, mask.
Specific implementation mode
The present invention is further elaborated with embodiment below in conjunction with the accompanying drawings.
Embodiment 1
A kind of micro-hotplate of silicon substrate structure, as shown in Figure 1.Substrate selects<100>The monocrystalline silicon of crystal orientation, as shown in Figure 5；It is first
Porous silicon 2 is first formed on a monocrystaline silicon substrate using anode oxidation method, as shown in Figure 6；Then partially porous silicon 2 is aoxidized into shape
At silica 3, it is attached to the surface of porous silicon 2, as shown in Figure 7；Whirl coating is carried out on the surface of silica 3 so that positivity
Photoresist 6 is evenly distributed on silica 3, as shown in figure 8, viscous between positive photoresist 6 and silica 3 in order to increase
Conjunction property, immediately dries it after whirl coating.
According to the electrode shape of Fig. 2, corresponding mask 7 is scribed, silicon chip is made only to expose the position for needing sputtering electrode, and
Other parts all protect with photoresist.Novel signal electrode 4 and heating electrode 5, can reduce the magnetic field to working region
Interference, improves the temperature of working region.Both Pt metals are used because Pt metals can steady operation at high temperature, simultaneously
The Temperature Difference Ratio other materials of Pt metals and ambient enviroment is small, to reduce loss.
Ultraviolet photoetching is carried out to positive photoresist 6 using mask 7, as shown in Figure 9；Positive photoresist is by ultraviolet light
Part after exposure is easier to be dissolved in developer solution, and the device after development is as shown in Figure 10；Using magnetron sputtering in device
Surface plates Pt metals, as shown in figure 11；For extra photoresist and Pt metals, removed using Ar bombardment by ions, after stripping
Device it is as shown in figure 12；Corrode into hole at the back of micro-hotplate workspace so that heating zone and the silicon substrate 1 to play a supportive role
Keep apart, reduces heat conduction losses, as shown in figure 13；On the basis of original corrosion, centre is eroded using chemical corrosion method
Partial porous silicon 2, as shown in figure 14；Heat insulation layer after corrosion, becomes larger with air contact area, and the heat conductivility of air is poor,
It can effectively prevent in the heat loss to silicon substrate 1 of workspace.
A kind of preferred scheme, can micro-hotplate entirety surface magnetic control sputtering tin dioxide thin film as gas sensor
Sensitive material.
A kind of technological process of the micro-hotplate of silicon substrate structure, is made using silicon micro-machining technology, specific to walk
It is rapid as follows：
(1) preparation and cleaning of silicon chip：Silicon chip is boiled into 5min in high-temperature concentrated sulfuric acid solution, is then cleaned with deionized water
Impurity and dust for being infected on silicon chip etc. finally dry up silicon chip with nitrogen gun, then dry 30min in 110 DEG C of baking ovens.
(2) porous silicon is prepared：Porous silicon 2 is formed on silicon substrate 1 using anode oxidation method.
(3) silica is prepared：Thermal oxide is carried out to porous silicon 2 in the oxidation furnace of PLC technology.
(4) Pt electrodes are sputtered：Positive photoresist 6 is applied on silica 3.After adding mask 7, ultraviolet light exposure is carried out
Light, development；Magnetron sputtering Pt, using Ar bombardment by ions, stripping photoresist and its Pt above.
(5) corrode silicon substrate and partial insulation layer：It is eroded under workspace from the back side using 20% sodium hydroxide solution
Silicon substrate 1；The part of intermediate porous silicon 2 is further corroded on this basis.
Comparative example 1
By ANSYS simulation softwares to whether there is or not the devices for increasing porous silicon to have carried out heat analysis respectively, such as Fig. 3, Fig. 4 institute
Show, Fig. 3 is the FEM Numerical Simulation figure for applying the identical micro-hotplate for not increasing porous silicon when being thermally generated rate, and Fig. 4 is to apply phase
With the FEM Numerical Simulation figure for the micro-hotplate for increasing porous silicon when being thermally generated rate.By comparison diagram 3, Fig. 4 it can be found that novel
Signal electrode 4 and heating electrode 5 so that high-temperature area area it is larger, uniformity of temperature profile.Increase the low-grade fever after porous silicon
For plate in identical temperature higher under being thermally generated rate, Temperature Distribution is more uniform.
For the micro-hotplate of the present invention on the basis of original, more preferably effect can be reached by only corroding heat insulation layer.With power consumption
The advantages that low, workspace uniformity of temperature profile, at low cost, easy batch production.
In the disclosed technical scope of invention, the change or replacement that can be readily occurred in should all be covered and be taken off in the present invention
Within the technical scope of dew.Therefore, protection scope of the present invention should be subject to the scope of protection of the claims.
Claims (6)
1. a kind of micro-hotplate of silicon substrate structure, including substrate, which is characterized in that the substrate uses monocrystalline silicon, the substrate table
Face is signal electrode and heating electrode by being covered with porous silicon layer, heat insulation layer and heating zone, the heating zone outside interior cause successively；Its
In, substrate back is etched into hole with porous silicon layer.
2. a kind of micro-hotplate of silicon substrate structure according to claim 1, which is characterized in that the crystal orientation of the monocrystalline silicon is<
100>。
3. a kind of micro-hotplate of silicon substrate structure according to claim 1, which is characterized in that the heat insulation layer is silica
Layer.
4. a kind of micro-hotplate of silicon substrate structure according to claim 1, which is characterized in that the signal electrode and heating electricity
Pole is all made of Pt metal electrodes.
5. a kind of micro-hotplate of silicon substrate structure according to claim 1, which is characterized in that the surface of the micro-hotplate entirety
It is covered with one layer of tin dioxide thin film.
6. a kind of preparation method of the micro-hotplate of silicon substrate structure described in claim 1, which is characterized in that include the following steps：
Step 1) prepares and cleaning silicon chip, as substrate；
Step 2) prepares porous silicon：Using anode oxidation method porous silicon layer is formed on substrate prepared by step 1)；
Step 3) prepares heat insulation layer：Thermal oxide is carried out to porous silicon layer prepared by step 2) in the oxidation furnace of PLC technology,
Silica is formed as heat insulation layer；
Step 4) sputters Pt electrodes：Positive photoresist is applied on heat insulation layer prepared by step 3), after adding mask, is carried out ultraviolet
Line exposing, development, then magnetron sputtering Pt, using Ar bombardment by ions, Pt electrode conducts are made in stripping photoresist and its Pt above
Heating zone；
Step 5) corrodes substrate and porous silicon layer：Silicon substrate under eroding heating zone from the back side using sodium hydroxide solution, and
The porous silicon layer for further corroding middle part, is made the micro-hotplate of the silicon substrate structure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810398572.8A CN108439326A (en) | 2018-04-28 | 2018-04-28 | A kind of micro-hotplate of silicon substrate structure and preparation method thereof |
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| CN201810398572.8A CN108439326A (en) | 2018-04-28 | 2018-04-28 | A kind of micro-hotplate of silicon substrate structure and preparation method thereof |
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Family
ID=63202246
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111006773A (en) * | 2019-11-26 | 2020-04-14 | 北京振兴计量测试研究所 | MEMS infrared radiation surface uniformity improving system in space environment |
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| JPH10160538A (en) * | 1996-12-02 | 1998-06-19 | Murata Mfg Co Ltd | Heat sensor and its manufacture |
| KR20050097421A (en) * | 2004-04-03 | 2005-10-07 | 동서대학교산학협력단 | Device array for sensing a gas or gas mixture and fabrication method of the same |
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| US20110030468A1 (en) * | 2009-08-10 | 2011-02-10 | Siargo, Ltd. | Robust micromachining thermal mass flow sensor and method of making the same |
| CN102358612A (en) * | 2011-08-23 | 2012-02-22 | 吉林大学 | Silicon-based coplanar micro-gas sensor chip and its application in micro-gas sensor preparation |
| US20130068013A1 (en) * | 2011-09-16 | 2013-03-21 | Honeywell International Inc. | Sensor element with engineered silicide |
| CN203998937U (en) * | 2014-07-18 | 2014-12-10 | 苏州能斯达电子科技有限公司 | The silica-based micro-hotplate of a kind of MEMS |
| CN107404775A (en) * | 2017-08-04 | 2017-11-28 | 南京邮电大学 | A kind of micro- heating plate based on porous silicon heat insulation layer and preparation method thereof |
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-
2018
- 2018-04-28 CN CN201810398572.8A patent/CN108439326A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH10160538A (en) * | 1996-12-02 | 1998-06-19 | Murata Mfg Co Ltd | Heat sensor and its manufacture |
| KR20050097421A (en) * | 2004-04-03 | 2005-10-07 | 동서대학교산학협력단 | Device array for sensing a gas or gas mixture and fabrication method of the same |
| CN201203591Y (en) * | 2008-07-11 | 2009-03-04 | 中国电子科技集团公司第四十九研究所 | Low-power consumption thermal insulation double-module integrated humidity sensor chip with heat purification function |
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| CN102358612A (en) * | 2011-08-23 | 2012-02-22 | 吉林大学 | Silicon-based coplanar micro-gas sensor chip and its application in micro-gas sensor preparation |
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| CN208182611U (en) * | 2018-04-28 | 2018-12-04 | 南京邮电大学 | A kind of micro-hotplate of silicon substrate structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111006773A (en) * | 2019-11-26 | 2020-04-14 | 北京振兴计量测试研究所 | MEMS infrared radiation surface uniformity improving system in space environment |
| CN111006773B (en) * | 2019-11-26 | 2022-02-11 | 北京振兴计量测试研究所 | MEMS infrared radiation surface uniformity improving system in space environment |
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