CN108428710A - 半导体结构及其形成方法和工作方法 - Google Patents
半导体结构及其形成方法和工作方法 Download PDFInfo
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- CN108428710A CN108428710A CN201810315834.XA CN201810315834A CN108428710A CN 108428710 A CN108428710 A CN 108428710A CN 201810315834 A CN201810315834 A CN 201810315834A CN 108428710 A CN108428710 A CN 108428710A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 119
- 230000001413 cellular effect Effects 0.000 claims description 33
- 230000005540 biological transmission Effects 0.000 claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 8
- 108091008695 photoreceptors Proteins 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 9
- 238000001514 detection method Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- -1 phosphonium ion Chemical class 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (19)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810315834.XA CN108428710B (zh) | 2018-04-10 | 2018-04-10 | 半导体结构及其形成方法和工作方法 |
Applications Claiming Priority (1)
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CN201810315834.XA CN108428710B (zh) | 2018-04-10 | 2018-04-10 | 半导体结构及其形成方法和工作方法 |
Publications (2)
Publication Number | Publication Date |
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CN108428710A true CN108428710A (zh) | 2018-08-21 |
CN108428710B CN108428710B (zh) | 2021-01-22 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201810315834.XA Active CN108428710B (zh) | 2018-04-10 | 2018-04-10 | 半导体结构及其形成方法和工作方法 |
Country Status (1)
Country | Link |
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CN (1) | CN108428710B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109298804A (zh) * | 2018-10-23 | 2019-02-01 | 京东方科技集团股份有限公司 | 触控电路及其驱动方法、触控基板及显示装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1251945A (zh) * | 1998-10-21 | 2000-05-03 | 李韫言 | 微细加工热辐射红外传感器 |
JP2015162562A (ja) * | 2014-02-27 | 2015-09-07 | 株式会社ニコン | 撮像装置およびデジタルカメラ |
CN104979365A (zh) * | 2014-04-10 | 2015-10-14 | 全视科技有限公司 | 图像传感器像素及图像传感器 |
CN105206636A (zh) * | 2015-08-31 | 2015-12-30 | 上海集成电路研发中心有限公司 | 可调节的混合成像探测器像元结构及其制备方法 |
CN107039473A (zh) * | 2015-11-30 | 2017-08-11 | 三星电子株式会社 | 图像传感器和包括其的电子装置 |
-
2018
- 2018-04-10 CN CN201810315834.XA patent/CN108428710B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1251945A (zh) * | 1998-10-21 | 2000-05-03 | 李韫言 | 微细加工热辐射红外传感器 |
JP2015162562A (ja) * | 2014-02-27 | 2015-09-07 | 株式会社ニコン | 撮像装置およびデジタルカメラ |
CN104979365A (zh) * | 2014-04-10 | 2015-10-14 | 全视科技有限公司 | 图像传感器像素及图像传感器 |
CN105206636A (zh) * | 2015-08-31 | 2015-12-30 | 上海集成电路研发中心有限公司 | 可调节的混合成像探测器像元结构及其制备方法 |
CN107039473A (zh) * | 2015-11-30 | 2017-08-11 | 三星电子株式会社 | 图像传感器和包括其的电子装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109298804A (zh) * | 2018-10-23 | 2019-02-01 | 京东方科技集团股份有限公司 | 触控电路及其驱动方法、触控基板及显示装置 |
CN109298804B (zh) * | 2018-10-23 | 2022-10-28 | 京东方科技集团股份有限公司 | 触控电路及其驱动方法、触控基板及显示装置 |
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CN108428710B (zh) | 2021-01-22 |
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Address after: Room 508-511, building a, Modern Plaza, No. 18, Weiye Road, Kunshan Development Zone, Suzhou, Jiangsu Applicant after: Ruixin Microelectronics Co.,Ltd. Address before: Room 508-511, block A, Modern Plaza, 18 Weiye Road, Kunshan, Jiangsu, Suzhou, 215300 Applicant before: BRIGATES MICROELECTRONICS (KUNSHAN) Co.,Ltd. |
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Effective date of registration: 20220104 Address after: 100000 03, 15 floor, 6 building, No. 2 hospital, West Third Ring Road, Haidian District, Beijing. Patentee after: Beijing Cheng Bo sharp core technology Co.,Ltd. Address before: Room 508-511, block a, Modern Plaza, 18 Weiye Road, Kunshan Development Zone, Suzhou City, Jiangsu Province, 215300 Patentee before: Ruixin Microelectronics Co.,Ltd. |
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CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Room 03, 15/F, Building 6, Yard A2, West Third Ring Road North, Haidian District, Beijing 100089 Patentee after: Beijing Night Vision Advanced Technology Co.,Ltd. Address before: 100000 03, 15 floor, 6 building, No. 2 hospital, West Third Ring Road, Haidian District, Beijing. Patentee before: Beijing Cheng Bo sharp core technology Co.,Ltd. |