CN108428672A - The two-sided three-dimensionally integrated framework of ceramics and packaging method of ultra-wide band radio-frequency micro-system - Google Patents
The two-sided three-dimensionally integrated framework of ceramics and packaging method of ultra-wide band radio-frequency micro-system Download PDFInfo
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- CN108428672A CN108428672A CN201810340528.1A CN201810340528A CN108428672A CN 108428672 A CN108428672 A CN 108428672A CN 201810340528 A CN201810340528 A CN 201810340528A CN 108428672 A CN108428672 A CN 108428672A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 122
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 46
- 238000005538 encapsulation Methods 0.000 claims abstract description 12
- 229910000679 solder Inorganic materials 0.000 claims abstract description 8
- 238000003466 welding Methods 0.000 claims description 43
- 239000000463 material Substances 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 238000007747 plating Methods 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 229910000833 kovar Inorganic materials 0.000 claims description 7
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 claims description 5
- 229910000969 tin-silver-copper Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 claims description 4
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical group [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 claims description 3
- 229920002521 macromolecule Polymers 0.000 claims description 3
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 claims 1
- 238000007689 inspection Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000009434 installation Methods 0.000 abstract description 2
- 230000010354 integration Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Casings For Electric Apparatus (AREA)
Abstract
The present invention provides a kind of two-sided three-dimensionally integrated framework of ceramics of ultra-wide band radio-frequency micro-system, belongs to ultra-wide band radio-frequency encapsulation technology field.Including ceramic substrate, the micro- frame of metal, front cover plate, back cover plate and BGA soldered balls：The two-sided cavity groove offered for chip of the ceramic substrate, the micro- frame of metal is welded on the front of ceramic substrate, the front cover plate is welded on the micro- frame of metal, the back cover plate is welded in the back side cavity groove of ceramic substrate, region of the back side of the ceramic substrate in addition to back cover plate is provided with BGA pads, and BGA soldered balls are by BGA pad solders at the back side of ceramic substrate.The present invention also provides the packaging methods of the integrated architecture.The two-sided three-dimensionally integrated framework of ceramics disclosed by the invention and packaging method, density is internally integrated to be promoted by about one time, the volume occupancy of external interconnection interface and level Hermetic Package substantially reduces, and is provided simultaneously with that simple in structure, installation step is few, is the effective means for realizing that ultra-wide band radio-frequency micro-system is three-dimensional stacked.
Description
Technical field
The invention belongs to ultra-wide band radio-frequency encapsulation technology field, the ceramics of specially a kind of ultra-wide band radio-frequency micro-system are two-sided
Three-dimensionally integrated framework and packaging method.
Background technology
With Military Electronic Equipment minimize active demand, wide band radio-frequency encapsulation to more high density, higher frequency,
The direction of smaller interconnection interface is developed.The existing radio frequency package based on multilayer ceramic substrate is mostly that single side is integrated, even if using
Organic substrate carries out two-sided integrated being also required to carry out airtight, limited, level Hermetic Package that there are integration densities and mutual using metal shell
Connector can occupy the problem of larger volume, it is difficult to adapt to the integrated growth requirement of electronic equipment micro-system.
Invention content
The purpose of the present invention is to provide one kind by ceramic substrate carry out it is two-sided begin to speak arranging devices and use BGA
The integration mode that (ball grid array) externally interconnects realizes the three-dimension packaging based on ceramic substrate, meets the integration of multiple chips
Integrated and airtight demand promotes the integration density of ultra-wide band radio-frequency micro-system.The object of the invention is come real by the following technical programs
It is existing：
A kind of two-sided three-dimensionally integrated framework of ceramics of ultra-wide band radio-frequency micro-system, including ceramic substrate, the micro- frame of metal, front
Cover board, back cover plate and BGA soldered balls：
The two-sided cavity groove offered for chip of the ceramic substrate, the micro- frame of metal are welded on ceramic base
The front of plate, the front cover plate are welded on the micro- frame of metal, and the back cover plate is welded in the back side cavity groove of ceramic substrate,
Region of the back side of the ceramic substrate in addition to back cover plate is provided with BGA pads, and BGA soldered balls are existed by BGA pad solders
The back side of ceramic substrate.
As an a kind of specific reality of the two-sided three-dimensionally integrated framework of ceramics of ultra-wide band radio-frequency micro-system of the present invention
Example is applied, the ceramic substrate is multilayer ceramic substrate.
As an a kind of specific reality of the two-sided three-dimensionally integrated framework of ceramics of ultra-wide band radio-frequency micro-system of the present invention
Example is applied, the micro- frame of metal is identical as the shape of ceramic substrate, is distributed in the circumferential perimeter of ceramic substrate.
As an a kind of specific reality of the two-sided three-dimensionally integrated framework of ceramics of ultra-wide band radio-frequency micro-system of the present invention
Example is applied, the ceramic substrate is square, and the metal framework is square frame structure, is distributed in four week of ceramic substrate
Bian Shang.
As an a kind of specific reality of the two-sided three-dimensionally integrated framework of ceramics of ultra-wide band radio-frequency micro-system of the present invention
Example is applied, the material of the ceramic substrate is LTCC or HTCC；The material of the micro- frame of the metal and cover board is kovar alloy or sial
Alloy；The BGA soldered balls are tin-lead soldered ball, high lead welding ball, copper core soldered ball, macromolecule kernel soldered ball or solder post.
As an a kind of specific reality of the two-sided three-dimensionally integrated framework of ceramics of ultra-wide band radio-frequency micro-system of the present invention
Apply example, the ceramic base plate surface plating nickel gold or NiPdAu；The micro- frame plating nickel on surface gold of metal；The front cover plate and the back side
Lid surface plating nickel gold.
As an a kind of specific reality of the two-sided three-dimensionally integrated framework of ceramics of ultra-wide band radio-frequency micro-system of the present invention
Example is applied, the micro- frame of metal is with ceramic substrate using golden tin welding；The front cover plate and the micro- frame of metal using parallel seam welding or
Laser seal welding；The back cover plate is welded with ceramic substrate using golden tin welding, the welding of tin antimony or tin silver copper.
The present invention also provides a kind of packaging methods of above-mentioned three-dimensionally integrated framework, include the following steps：
1) the micro- frame of metal is first welded on the front of the ceramic substrate equipped with two-sided cavity groove, and checks the airtight of welding position
Seal characteristic；
2) by various die bondings to be assembled in the cavity groove of the tow sides of ceramic substrate, and gold wire bonding reality is carried out
Now interconnect；
3) back cover plate is welded in the cavity groove of the ceramic substrate back side, and front cover plate is welded on the micro- frame of metal, examined
Look into the air-tightness of cover board welding；
4) BGA soldered balls are implanted on the corresponding BGA pads in the ceramic substrate back side, you can realize ultra-wide band radio-frequency micro-system
The two-sided three-dimensionally integrated encapsulation of ceramics.
Compared with prior art, the invention has the advantages that：
The present invention is based on the wideband high-frequency of multi-layer ceramics, random layer interconnection and from airtight advantage, BGA perpendicular interconnections it is highly dense
The characteristics of degree and good compatibility, using this special process means of the two-sided cavity groove of multilayer ceramic substrate, by multiple temperature gradients
Technique assembly and encapsulation flow, realize ultra-wide band radio-frequency micro-system three-dimensionally integrated encapsulation.
The two-sided three-dimensionally integrated framework of ceramics disclosed by the invention and packaging method, it is internal compared with existing other technologies
Integration density is promoted by about one time, and the volume occupancy of external interconnection interface and level Hermetic Package substantially reduces, and is provided simultaneously with structure letter
Advantage single, installation step is few is the good solution for realizing that ultra-wide band radio-frequency micro-system is three-dimensional stacked.
Description of the drawings
Fig. 1 is the sectional view of the two-sided three-dimensionally integrated framework of multi-layer ceramics of 1 ultra-wide band radio-frequency micro-system of embodiment.
Fig. 2 is the vertical view of the two-sided three-dimensionally integrated framework of multi-layer ceramics of 1 ultra-wide band radio-frequency micro-system of embodiment.
Fig. 3 is the upward view of the two-sided three-dimensionally integrated framework of multi-layer ceramics of 1 ultra-wide band radio-frequency micro-system of embodiment.
Reference numeral：1- multilayer ceramic substrates, 2- metal frameworks, 3- front cover plates, 4- back cover plates, 5-BGA soldered balls.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
It is two-sided three-dimensionally integrated to a kind of ceramics of ultra-wide band radio-frequency micro-system of the present invention with reference to concrete structure and principle
Framework and packaging method are described in detail.
A kind of two-sided three-dimensionally integrated framework of ceramics of ultra-wide band radio-frequency micro-system of the present invention, including ceramic substrate, metal are micro-
Frame, front cover plate, back cover plate and BGA soldered balls：
The two-sided cavity groove offered for chip of the ceramic substrate, the micro- frame of metal are welded on ceramic base
The front of plate, the front cover plate are welded on the micro- frame of metal, and the back cover plate is welded in the back side cavity groove of ceramic substrate,
Region of the back side of the ceramic substrate in addition to back cover plate is provided with BGA pads, and BGA soldered balls are existed by BGA pad solders
The back side of ceramic substrate.
In integrated architecture of the present invention, the two-sided cavity groove offered for chip of ceramic substrate, ceramic substrate rises
To carrying chip, low-and high-frequency signal interconnection and internal airtight effect.The material of the ceramic substrate can be that (low temperature is total by LTCC
Burn ceramics) or baseplate material be HTCC (high-temperature co-fired ceramics).Ceramic substrate opens up cavity groove structure using two-sided, two-sided to arrange
Chip.Radio frequency package currently based on ceramic substrate is mostly that single side is integrated, and compared with prior art, integrated architecture of the present invention is same
Size interior energy integrates more chips, shortens signal interconnection path, and the integration density of product is promoted by about one time.
Ceramic substrate of the present invention is more preferably multilayer ceramic substrate.And ceramic substrate is tetragonal structure.
The micro- frame of metal is welded on the front of ceramic substrate, plays the role of electromagnetic shielding and level Hermetic Package.Metal is micro-
The material of frame and cover board is kovar alloy or silico-aluminum, and the micro- frame of metal is combined by golden tin welding with substrate.
The micro- frame of metal is identical as the shape of ceramic substrate, is distributed in the circumferential perimeter of ceramic substrate.Work as ceramic base
When plate is square, metal framework is square frame structure, is distributed on four peripheries of ceramic substrate.
The front cover plate is welded on the micro- frame of metal, and front cover plate carries out parallel seam welding with metal and realizes that front is airtight.
Alternatively, front cover plate uses Laser seal welding with the micro- frame of metal.And the material of the front cover plate is kovar alloy or silico-aluminum.
The back cover plate is welded in the back side cavity groove of ceramic substrate, and back side cavity groove is relatively deep to ensure necessary air chamber
Highly.Back cover plate is directly welded by tin silver copper with ceramic substrate and realizes that the back side is airtight.Further, the back cover plate and pottery
Porcelain substrate is using golden tin welding, the welding of tin antimony or tin silver copper welding, and the material of the back cover plate is kovar alloy or sial
Alloy.
Region of the back side of the ceramic substrate in addition to cover board is provided with BGA pads, and BGA soldered balls are welded by BGA pads
It is connected on the back side of ceramic substrate.BGA soldered balls play the role of low-and high-frequency signal and vertically externally interconnect.The BGA soldered balls are conventional
Tin-lead soldered ball, BGA soldered balls are implanted on the BGA pads of substrate back, with conventional soldering of printed boards process compatible.
Optionally, BGA soldered balls are high lead welding ball, copper core soldered ball, macromolecule kernel soldered ball, solder post etc..
The method being packaged using above-mentioned three-dimensionally integrated framework, is included the following steps：
1) the micro- frame of metal is first welded on the front of the ceramic substrate equipped with two-sided cavity groove, and checks the airtight of welding position
Seal characteristic；
2) by various die bondings to be assembled in the cavity groove of the tow sides of ceramic substrate, and gold wire bonding reality is carried out
Now interconnect；
3) back cover plate is welded in the cavity groove of the ceramic substrate back side, and front cover plate is welded on the micro- frame of metal, examined
Look into the air-tightness of cover board welding；
4) BGA soldered balls are implanted on the corresponding BGA pads in the ceramic substrate back side, you can realize ultra-wide band radio-frequency micro-system
The two-sided three-dimensionally integrated encapsulation of ceramics.
The realization of the welding temperature and welding manner that are previously mentioned in packaging method of the present invention, for those skilled in the art
It is easy to implement, as long as welding purpose can be realized.Certainly, it is needle according to the welded encapsulation of packaging method of the present invention sequence
It is special to the three-dimensionally integrated framework of the present invention.
Packaging method Major Difficulties of the present invention are to use double-faced packaging, need to utilize different packaging technologies temperature gradient with
And entirety or local heating means are combined and realize novel structure, for example the welding of cover board preferably uses local welding.For
It avoids the temperature of later process from having an impact preceding working procedure, need to strictly pass through micro- frame welding-device assembly-air sealing cover-BGA
Multiple assemble flows such as welding are to pull open temperature gradient.Erection welding flow of the present invention is the technological requirement of encapsulation, and is base
In the requirement of each step welding temperature, it then follows micro- frame welding temperature is welded higher than backboard, and backboard welding is welded higher than BGA, to
So that the welding temperature of later procedure is less than previous welding temperature, pulls open temperature gradient, prevent follow-up welding temperature excessively high to having welded
Relay part causes remelting, influences package quality.So being verified through inventor's test of many times, the reality of the three-dimensionally integrated framework of the present invention
The mating micro- frame welding → device assembly → air sealing cover of the present invention → BGA welding packaging methods technique now must be strictly installed
It can realize, otherwise cannot achieve the effect that three-dimensionally integrated framework encapsulation.
With reference to specific example to a kind of two-sided three-dimensionally integrated framework of ceramics of ultra-wide band radio-frequency micro-system of the present invention and
Packaging method is further described.
Example 1
The two-sided three-dimensionally integrated framework of multi-layer ceramics of this example ultra-wide band radio-frequency micro-system as shown in Figure 1, Figure 2 and Figure 3.Packet
Include multilayer ceramic substrate 1, the micro- frame 2 of metal, front cover plate 3, back cover plate 4 and BGA soldered balls 5：
The two-sided cavity groove offered for chip of the multilayer ceramic substrate 1, the micro- frame of the metal 2 are welded on
The front of multilayer ceramic substrate 1, the front cover plate 3 are welded on the micro- frame of metal 2, and the back cover plate 4 is welded on multilayer pottery
In the back side cavity groove of porcelain substrate 1, the region of the back side of the multilayer ceramic substrate 1 in addition to back cover plate 4 is provided with BGA welderings
Disk, BGA soldered balls 5 are by BGA pad solders at the back side of multilayer ceramic substrate 1.
The packaging method of the two-sided three-dimensionally integrated framework of multi-layer ceramics of this example ultra-wide band radio-frequency micro-system is as follows：
1, the micro- frame of multilayer ceramic substrate 1 and metal with two-sided cavity groove 2 is first subjected to golden tin welding, and checks weld part
The hermetic seal characteristic of position.Ceramic substrate is the LTCC for selecting Dupont 9K7 materials in this example, and area size is 30mm × 30mm,
Inside carries out level, the vertical transfer of DC-40GHz ultra-broadband signals, substrate plating surface NiPdAu, and the micro- frame material of front metal is
Kovar alloy, plating nickel on surface gold.
2, the intracavitary of the tow sides by various die bondings to be assembled in substrate, and it is necessary to carry out gold wire bonding etc.
Interconnection.
3, the back side that back cover plate 4 is welded in multilayer ceramic substrate 1 is welded using tin silver copper, then will just using parallel seam welding
Surface cover 3 is welded on the micro- frame of metal 2, checks the level Hermetic Package that entire substrate is completed after the air-tightness of cover board welding is qualified.
This example middle cover plate material selects kovar alloy, plating nickel on surface gold.
4, BGA soldered balls 5 are implanted on the corresponding BGA pads in the ceramic substrate back side using reflow welding.0.6mm is selected in this example
The tin-lead soldered ball of diameter, the final three-dimensionally integrated encapsulation for realizing radio frequency micro-system.
In the use of the present invention, can suitably change the size of multilayer ceramic substrate, it is proposed that be square, the length of side is
10mm to 32mm can also be adjusted flexibly the number of locations of size and input/output interface that the back side is begun to speak, it is micro- finally to meet radio frequency
The different application demand of system module.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement etc., should all be included in the protection scope of the present invention made by within refreshing and principle.
Claims (8)
1. a kind of two-sided three-dimensionally integrated framework of ceramics of ultra-wide band radio-frequency micro-system, which is characterized in that including ceramic substrate, metal
Micro- frame, front cover plate, back cover plate and BGA soldered balls：
The two-sided cavity groove offered for chip of the ceramic substrate, the micro- frame of metal are welded on ceramic substrate
Front, the front cover plate are welded on the micro- frame of metal, and the back cover plate is welded in the back side cavity groove of ceramic substrate, described
Region of the back side of ceramic substrate in addition to back cover plate is provided with BGA pads, and BGA soldered balls are by BGA pad solders in ceramics
The back side of substrate.
2. the two-sided three-dimensionally integrated framework of ceramics of a kind of ultra-wide band radio-frequency micro-system as described in claim 1, which is characterized in that institute
It is multilayer ceramic substrate to state ceramic substrate.
3. the two-sided three-dimensionally integrated framework of ceramics of a kind of ultra-wide band radio-frequency micro-system as described in claim 1, which is characterized in that institute
It is identical as the shape of ceramic substrate to state the micro- frame of metal, is distributed in the circumferential perimeter of ceramic substrate.
4. the two-sided three-dimensionally integrated framework of ceramics of a kind of ultra-wide band radio-frequency micro-system as claimed in claim 3, which is characterized in that institute
It is square to state ceramic substrate, and the metal framework is square frame structure, is distributed on four peripheries of ceramic substrate.
5. the two-sided three-dimensionally integrated framework of ceramics of a kind of ultra-wide band radio-frequency micro-system as described in claim 1, which is characterized in that institute
The material for stating ceramic substrate is LTCC or HTCC；The material of the micro- frame of the metal and cover board is kovar alloy or silico-aluminum；Institute
It is tin-lead soldered ball, high lead welding ball, copper core soldered ball, macromolecule kernel soldered ball or solder post to state BGA soldered balls.
6. the two-sided three-dimensionally integrated framework of ceramics of a kind of ultra-wide band radio-frequency micro-system as claimed in claim 5, which is characterized in that institute
State ceramic base plate surface plating nickel gold or NiPdAu；The micro- frame plating nickel on surface gold of metal；The front cover plate and back cover plate table
Face plating nickel gold.
7. the two-sided three-dimensionally integrated framework of ceramics of a kind of ultra-wide band radio-frequency micro-system as described in claim 1, which is characterized in that institute
The micro- frame of metal is stated with ceramic substrate using golden tin welding；The front cover plate is sealed with the micro- frame of metal using parallel seam welding or laser
Weldering；The back cover plate is welded with ceramic substrate using golden tin welding, the welding of tin antimony or tin silver copper.
8. the packaging method of integrated architecture as described in any one of claim 1 to 7, which is characterized in that include the following steps：
1) the micro- frame of metal is first welded on the front of the ceramic substrate equipped with two-sided cavity groove, and checks that the hermetic seal of welding position is special
Property；
2) it by various die bondings to be assembled in the cavity groove of the tow sides of ceramic substrate, and carries out gold wire bonding and realizes mutually
Even；
3) back cover plate is welded in the cavity groove of the ceramic substrate back side, and front cover plate is welded on the micro- frame of metal, inspection cover
The air-tightness of plate welding；
4) BGA soldered balls are implanted on the corresponding BGA pads in the ceramic substrate back side, you can realize the ceramics of ultra-wide band radio-frequency micro-system
Two-sided three-dimensionally integrated encapsulation.
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| CN109346534A (en) * | 2018-11-23 | 2019-02-15 | 中国电子科技集团公司第四十四研究所 | A kind of ceramic cartridge structure and its encapsulating structure |
| CN109411370A (en) * | 2018-09-20 | 2019-03-01 | 西安空间无线电技术研究所 | A kind of the HTCC system-in-package structure and packaging method of upside-down mounting welding core |
| CN109860137A (en) * | 2018-12-12 | 2019-06-07 | 中国电子科技集团公司第五十五研究所 | Small-sized high density FPGA system grade 3D encapsulated circuit |
| CN110211884A (en) * | 2019-05-25 | 2019-09-06 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Density three-dimensional lamination autoregistration integrated encapsulation method |
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| CN110211884A (en) * | 2019-05-25 | 2019-09-06 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Density three-dimensional lamination autoregistration integrated encapsulation method |
| CN110544632B (en) * | 2019-08-01 | 2021-01-29 | 中国电子科技集团公司第二十九研究所 | Method for manufacturing BGA (ball grid array) bonding pad on packaging cover plate of LTCC (Low temperature Co-fired ceramic) substrate with double-sided cavity |
| CN110544632A (en) * | 2019-08-01 | 2019-12-06 | 中国电子科技集团公司第二十九研究所 | Method for manufacturing BGA (ball grid array) bonding pad on packaging cover plate of LTCC (Low temperature Co-fired ceramic) substrate with double-sided cavity |
| CN111384601A (en) * | 2020-03-20 | 2020-07-07 | 上海无线电设备研究所 | Welding assembly interconnection method of high-integration TR (transmitter-receiver) component |
| WO2021227240A1 (en) * | 2020-05-13 | 2021-11-18 | 中国电子科技集团公司第五十五研究所 | Three-dimensional packaging housing structure of radio frequency microsystem and manufacturing method |
| CN111599789A (en) * | 2020-05-13 | 2020-08-28 | 中国电子科技集团公司第十三研究所 | Ceramic leadless chip type packaging structure |
| WO2021227374A1 (en) * | 2020-05-13 | 2021-11-18 | 中国电子科技集团公司第十三研究所 | Cermaic encapsulating casing and encapsulating casing mounting structure |
| CN111599690A (en) * | 2020-05-27 | 2020-08-28 | 上海芯波电子科技有限公司 | Double-sided cavity digging ceramic packaging process based on coexistence of WB chip and FC chip |
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| CN111599691A (en) * | 2020-05-27 | 2020-08-28 | 上海芯波电子科技有限公司 | FC chip-based double-sided cavity digging ceramic packaging process |
| CN111933577A (en) * | 2020-07-15 | 2020-11-13 | 中国电子科技集团公司第二十九研究所 | Local large-area welding board-level interconnection integration method for airtight packaging unit |
| CN112259507A (en) * | 2020-10-21 | 2021-01-22 | 北京轩宇空间科技有限公司 | Heterogeneous integrated system-in-package structure and packaging method |
| CN112259507B (en) * | 2020-10-21 | 2024-03-08 | 北京轩宇空间科技有限公司 | Heterogeneous integrated system-in-package structure and packaging method |
| CN112382616A (en) * | 2020-11-11 | 2021-02-19 | 合肥圣达电子科技实业有限公司 | Electronic packaging shell and preparation method thereof |
| CN115346952A (en) * | 2022-10-18 | 2022-11-15 | 合肥圣达电子科技实业有限公司 | Packaging structure for high-power large-current device and preparation method thereof |
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