CN108417738B - Manufacturing method of OLED device - Google Patents
Manufacturing method of OLED device Download PDFInfo
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- CN108417738B CN108417738B CN201810232021.4A CN201810232021A CN108417738B CN 108417738 B CN108417738 B CN 108417738B CN 201810232021 A CN201810232021 A CN 201810232021A CN 108417738 B CN108417738 B CN 108417738B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 11
- 230000009471 action Effects 0.000 claims abstract description 7
- 230000005684 electric field Effects 0.000 claims abstract description 7
- 238000002347 injection Methods 0.000 claims description 13
- 239000007924 injection Substances 0.000 claims description 13
- 230000005525 hole transport Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 8
- 238000007740 vapor deposition Methods 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 5
- 238000007641 inkjet printing Methods 0.000 claims description 4
- 230000002209 hydrophobic effect Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 230000005611 electricity Effects 0.000 abstract description 4
- 229920001621 AMOLED Polymers 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a method for manufacturing an OLED device, wherein a cathode contact layer spaced from an anode layer is arranged on a substrate, a cathode contact hole is arranged on a pixel definition layer corresponding to the upper part of the cathode contact layer, an electron transmission layer extends into the cathode contact hole from a pixel opening in the manufacturing process to separate a cathode layer from the cathode contact layer, before the device normally works, in order to ensure that the cathode contact layer is electrically conducted with the cathode layer, positive voltage with equal potential is applied to the cathode layer and the anode layer, meanwhile, voltage smaller than the potential of the cathode layer is applied to the cathode contact layer, so that potential difference is formed between the cathode contact layer and the cathode layer, the electron transmission layer is broken down under the action of an electric field to conduct electricity, thereby realizing the electrical conduction of the cathode layer and the cathode contact layer, when the cathode layer of the OLED device works, the cathode contact hole layer can directly provide voltage current compensation, and then can prevent OLED display panel large tracts of land from appearing the uneven problem of luminance that the pressure drop leads to.
Description
Technical Field
The invention relates to the technical field of display, in particular to a manufacturing method of an OLED device.
Background
An Organic Light Emitting Diode (OLED) belongs to a novel current type semiconductor Light Emitting device, and belongs to an autonomous Light Emitting technology by controlling the injection of current carriers of the device and compositely exciting an Organic material to emit Light for display. Compared with a passive light emitting Liquid Crystal Display (LCD), the OLED Display capable of emitting light autonomously has the advantages of fast response speed, high contrast, wide viewing angle, and the like, is easy to realize flexible Display, is generally seen in the industry, and is considered in the industry to be a mainstream product of the next generation Display technology.
The display principle of the Active-matrix organic light emitting diode (AMOLED) and the LCD is basically the same, and the display is realized by controlling the on-off state of a Thin Film Transistor (TFT) of each sub-pixel. The difference between the two is that: the AMOLED display is that the current on the OLED is controlled by the TFT to change the light emitting brightness; the LCD display adjusts the transmittance of its backlight by controlling the voltage applied across the liquid crystal cell via the TFT. Compared with the two, the AMOLED display has higher requirements on the driving current capability of the TFT. The OLED is very sensitive to its driving current, and weak current variation affects its light emission intensity, so that the TFT driving transistor is required to continuously and stably supply the operating current. This puts stringent requirements on the stability of the AMOLED driver circuit, which also raises design goals for the AMOLED driver circuit.
At normal temperature, the resistance of a metal conductor is non-zero, and a certain voltage Drop is generated by the current passing through the conductor, which is called as a voltage Drop (IR Drop). The IR Drop on the metal wire results in a potential difference at different locations from the input end. In a large-area display panel, the IR Drop causes the current on the OLEDs at different positions to be different, which in turn causes the panel to emit non-uniform light and the image display quality to be good.
Disclosure of Invention
The invention aims to provide a manufacturing method of an OLED device, which can effectively prevent the OLED device from generating IR Drop and further improve the problem of uneven brightness of an OLED display panel.
In order to achieve the above object, the present invention provides a method for manufacturing an OLED device, comprising the steps of:
step S1, providing a substrate, and forming an anode layer and a cathode contact layer which are spaced on the substrate;
step S2, forming a pixel definition layer on the substrate, the anode layer and the cathode contact layer, wherein the pixel definition layer encloses a pixel opening on the anode layer and is correspondingly provided with a cathode contact hole above the cathode contact layer;
step S3, sequentially forming a hole injection layer, a hole transport layer, a light emitting layer and an electron transport layer on the anode layer from bottom to top, wherein the electron transport layer extends into the cathode contact hole from the pixel opening and is in contact with the cathode contact layer;
step S4, forming a cathode layer on the electron transport layer, the cathode layer covering the cathode contact layer, the electron transport layer separating the cathode layer from the cathode contact layer;
and step S5, applying equal potential voltage to the anode layer and the cathode layer, and applying voltage with potential smaller than that of the cathode layer to the cathode contact layer at the same time, so that a potential difference is formed between the cathode contact layer and the cathode layer, and the electron transport layer is broken down to conduct under the action of an electric field, so that the cathode layer and the cathode contact layer are electrically conducted.
In step S5, the potential difference formed between the cathode contact layer and the cathode layer is 10V to 30V.
In the step S5, the cathode contact layer and the cathode layer are maintained in a potential difference state for 5 minutes to 30 minutes.
In step S5, the voltage applied to the anode layer and the cathode layer is 10V to 30V, and the voltage applied to the cathode contact layer is-20V to 20V.
In step S3, the electron transport layer is formed by vapor deposition using a vapor deposition material.
In step S3, the hole injection layer, the hole transport layer, and the light emitting layer are formed by vapor deposition or inkjet printing.
The anode layer and the cathode contact layer are made of hydrophilic conductive materials, and the pixel defining layer is made of hydrophobic materials.
In step S3, the hole injection layer, the hole transport layer, and the light emitting layer are formed in the pixel opening.
The cathode contact layer is simultaneously separated from the anode layer, the hole injection layer, the hole transport layer and the light emitting layer through the pixel defining layer.
In step S1, the anode layer and the cathode contact layer are separated by 10 μm to 20 μm.
The invention has the beneficial effects that: the invention provides a method for manufacturing an OLED device, which is characterized in that a cathode contact layer separated from an anode layer is arranged on a substrate, a cathode contact hole is arranged on a pixel definition layer corresponding to the upper part of the cathode contact layer, an electron transmission layer extends into the cathode contact hole from the inside of a pixel opening in the manufacturing process to separate a cathode layer from the cathode contact layer, before the device normally works, in order to ensure that the cathode contact layer is electrically conducted with the cathode layer, positive voltage with equal potential is applied to the cathode layer and the anode layer, meanwhile, voltage smaller than the potential of the cathode layer is applied to the cathode contact layer, so that potential difference is formed between the cathode contact layer and the cathode layer, the electron transmission layer is broken down under the action of an electric field to conduct electricity, thereby realizing the electrical conduction of the cathode layer and the cathode contact layer, when the OLED device works, the cathode contact hole layer can directly provide voltage, further, the problem of uneven brightness caused by IR Drop in a large area of the OLED display panel can be prevented.
For a better understanding of the nature and technical aspects of the present invention, reference should be made to the following detailed description of the invention, taken in conjunction with the accompanying drawings, which are provided for purposes of illustration and description and are not intended to limit the invention.
Drawings
The technical solution and other advantages of the present invention will become apparent from the following detailed description of specific embodiments of the present invention, which is to be read in connection with the accompanying drawings.
In the drawings, there is shown in the drawings,
FIG. 1 is a flow chart of a method of fabricating an OLED device of the present invention;
FIG. 2 is a schematic diagram of step 1 of a method of fabricating an OLED device according to the present invention;
FIG. 3 is a schematic diagram of step 2 of the method of fabricating an OLED device of the present invention;
FIG. 4 is a schematic diagram of step 3 of the method of fabricating an OLED device of the present invention;
FIG. 5 is a schematic diagram of step 4 of the method of fabricating an OLED device of the present invention;
fig. 6 is a schematic diagram of step 5 of the method of fabricating an OLED device of the present invention.
Detailed Description
To further illustrate the technical means and effects of the present invention, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Referring to fig. 1, the present invention provides a method for manufacturing an OLED device, including the following steps:
step S1, as shown in fig. 2, provides a substrate 10, and forms an anode layer 21 and a cathode contact layer 30 spaced apart on the substrate 10.
Specifically, the substrate 10 is a glass substrate.
Specifically, in step S1, the anode layer 21 and the cathode contact layer 30 are separated by 10 μm to 20 μm and are not connected to each other.
Specifically, the materials of the anode layer 21 and the cathode contact layer 30 are hydrophilic conductive materials.
Step S2, as shown in fig. 3, a pixel defining layer 40 is formed on the substrate 10, the anode layer 21 and the cathode contact layer 30, wherein the pixel defining layer 40 surrounds a pixel opening 41 on the anode layer 21 and a cathode contact hole 45 is correspondingly formed above the cathode contact layer 30.
Specifically, the material of the pixel defining layer 40 is a hydrophobic material.
In particular, the cathode contact layer 30 is separated from the anode layer 21 by a pixel defining layer 40.
Step S3, as shown in fig. 4, a Hole Injection Layer (HIL) 24, a Hole Transport Layer (HTL) 25, an emission Layer (EML) 26, and an Electron Transport Layer (ETL) 27 are sequentially formed on the anode Layer 21 from bottom to top, and the Electron Transport Layer 27 extends from the pixel opening 41 into the cathode contact Hole 45 and contacts the cathode contact Layer 30.
Specifically, in step S3, the electron transport layer 27 is formed by vapor deposition using a vapor deposition material. It should be noted that, when the evaporation method is actually used to fabricate an OLED, since the fabrication of the independent electron transport layer 27 cannot be technically implemented, the cathode contact layer 30 cannot be directly connected to the cathode layer 23, and the cathode contact layer 30 cannot work.
Specifically, the electron transport layer 27 is disposed over the anode layer 21 and the cathode contact layer 30 and is not separated by the pixel defining layer 40, and the electron transport layer 27 located in the pixel opening 41 and the electron transport layer 27 located in the cathode contact hole 45 are connected on the pixel defining layer 40.
Specifically, in step S3, the hole injection layer 24, the hole transport layer 25, and the light-emitting layer 26 are formed in the pixel opening 41; the pixel defining layer 40 simultaneously separates the cathode contact layer 30 from the hole injection layer 24, the hole transport layer 25, and the light emitting layer 26.
Specifically, in step S3, the hole injection layer 24, the hole transport layer 25, and the light-emitting layer 26 are formed by vapor deposition or inkjet printing (IJP).
Step S4, as shown in fig. 5, forms a cathode layer 23 on the electron transport layer 27, the cathode layer 23 covering the cathode contact layer 30, and the electron transport layer 27 spacing the cathode layer 23 from the cathode contact layer 30.
Specifically, the cathode layer 23 is higher than the pixel defining layer 40 and is not separated by the pixel defining layer 40, and the cathode layer 23 located above the pixel opening 41 and above the cathode contact hole 45 is connected above the pixel defining layer 40 in a full-face structure.
Step S5, as shown in fig. 6, a voltage with an equal potential in the range of 10V to 30V is applied to the anode layer 21 and the cathode layer 23, and a voltage with a potential smaller than that of the cathode layer 23 in the range of-20V to 20V is applied to the cathode contact layer 30, so that a potential difference of 10V to 30V is formed between the cathode contact layer 30 and the cathode layer 23 and is maintained for 5 minutes to 30 minutes, and the electron transport layer 27 is broken down to conduct electricity under the action of the electric field, so that the cathode layer 23 and the cathode contact layer 30 are electrically conducted.
The invention discloses a method for manufacturing an OLED device, which comprises the steps of arranging a cathode contact layer 30 spaced from an anode layer 21 on a substrate 10, arranging a cathode contact hole 45 on a pixel defining layer 40 corresponding to the upper part of the cathode contact layer 30, extending an electron transmission layer 27 into the cathode contact hole 45 from a pixel opening 41 in the manufacturing process to space a cathode layer 23 from the cathode contact layer 30, applying positive voltage with equal potential to the cathode layer 23 and the anode layer 21 before the device normally works, applying negative voltage smaller than the potential of the cathode layer 23 to the cathode contact layer 30 to form potential difference between the cathode contact layer 30 and the cathode layer, and enabling the electron transmission layer 27 to be broken down under the action of an electric field to conduct electricity so as to realize the electrical conduction of the cathode layer 23 and the cathode contact layer 30, so that the manufactured OLED device is applied to an OLED display panel and works, positive voltage is applied to the anode layer 21, the same negative voltage is applied to the cathode layer 23 and the cathode contact hole layer 30 respectively, the cathode contact hole layer 30 can directly provide voltage and current compensation for the cathode layer 23, and the OLED device of each pixel is provided with the cathode contact layer 30 which is electrically communicated with the cathode layer 23, so that the problem of uneven brightness caused by IRdrop in a large area of the OLED display panel can be prevented.
In summary, the present invention provides a method for fabricating an OLED device, in which a cathode contact layer is disposed on a substrate and spaced from an anode layer, a cathode contact hole is disposed on a pixel defining layer and above the cathode contact layer, an electron transport layer extends into the cathode contact hole from a pixel opening to separate a cathode layer from the cathode contact layer, before the device normally works, in order to make the cathode contact layer and the cathode layer electrically connected, positive voltages with equal potential are applied to the cathode layer and the anode layer, and a voltage smaller than the potential of the cathode layer is applied to the cathode contact layer, so that a potential difference is formed between the cathode contact layer and the cathode layer, the electron transport layer is broken down to be electrically connected under the action of an electric field, thereby making the cathode layer and the cathode contact layer electrically connected, when the OLED device works, the cathode contact hole layer can directly provide voltage and current compensation for the cathode layer, further, the problem of uneven brightness caused by IR Drop in a large area of the OLED display panel can be prevented.
As described above, it will be apparent to those skilled in the art that other various changes and modifications may be made based on the technical solution and concept of the present invention, and all such changes and modifications are intended to fall within the scope of the appended claims.
Claims (9)
1. A manufacturing method of an OLED device is characterized by comprising the following steps:
step S1, providing a substrate (10), and forming an anode layer (21) and a cathode contact layer (30) which are spaced on the substrate (10);
step S2, forming a pixel defining layer (40) on a substrate (10), an anode layer (21) and a cathode contact layer (30), wherein the pixel defining layer (40) surrounds a pixel opening (41) on the anode layer (21) and is correspondingly provided with a cathode contact hole (45) above the cathode contact layer (30);
step S3, sequentially forming a hole injection layer (24), a hole transport layer (25), a light-emitting layer (26) and an electron transport layer (27) on the anode layer (21) from bottom to top, wherein the electron transport layer (27) extends from the pixel opening (41) to the cathode contact hole (45) and is in contact with the cathode contact layer (30);
step S4, forming a cathode layer (23) on the electron transport layer (27), wherein the cathode layer (23) covers the cathode contact layer (30), and the electron transport layer (27) separates the cathode layer (23) from the cathode contact layer (30);
step S5, applying equal potential voltage to the anode layer (21) and the cathode layer (23), and applying voltage with potential smaller than that of the cathode layer (23) to the cathode contact layer (30) at the same time, so that potential difference is formed between the cathode contact layer (30) and the cathode layer (23), the electron transport layer (27) is broken down to conduct under the action of electric field, and the cathode layer (23) and the cathode contact layer (30) are conducted electrically;
in step S3, the electron transport layer (27) is formed by vapor deposition from a vapor deposition material.
2. The method of claim 1, wherein in step S5, the potential difference formed between the cathode contact layer (30) and the cathode layer (23) is 10V to 30V.
3. The method of claim 2, wherein the step S5 is performed by maintaining the cathode contact layer (30) and the cathode layer (23) at a potential difference for 5-30 minutes.
4. The method of claim 2, wherein in step S5, the voltage applied to the anode layer (21) and the cathode layer (23) is 10V-30V, and the voltage applied to the cathode contact layer (30) is-20V.
5. The method of claim 1, wherein in step S3, the hole injection layer (24), the hole transport layer (25), and the light emitting layer (26) are formed by evaporation or inkjet printing.
6. The method of fabricating the OLED device according to claim 1, wherein the anode layer (21) and the cathode contact layer (30) are made of hydrophilic conductive materials, and the pixel defining layer (40) is made of hydrophobic materials.
7. The method of claim 1, wherein in step S3, the hole injection layer (24), the hole transport layer (25), and the light emitting layer (26) are formed in the pixel opening (41).
8. The method of fabricating the OLED device according to claim 1, wherein the cathode contact layer (30) is separated from the anode layer (21), the hole injection layer (24), the hole transport layer (25), and the light emitting layer (26) simultaneously by a pixel defining layer (40).
9. The method of fabricating the OLED device according to claim 1, wherein in step S1, the anode layer (21) and the cathode contact layer (30) are separated by 10 μm to 20 μm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810232021.4A CN108417738B (en) | 2018-03-20 | 2018-03-20 | Manufacturing method of OLED device |
| PCT/CN2019/070487 WO2019179216A1 (en) | 2018-03-20 | 2019-01-04 | Manufacturing method of oled device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810232021.4A CN108417738B (en) | 2018-03-20 | 2018-03-20 | Manufacturing method of OLED device |
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| Publication Number | Publication Date |
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| CN108417738A CN108417738A (en) | 2018-08-17 |
| CN108417738B true CN108417738B (en) | 2019-12-24 |
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| CN201810232021.4A Active CN108417738B (en) | 2018-03-20 | 2018-03-20 | Manufacturing method of OLED device |
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| WO (1) | WO2019179216A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108417738B (en) * | 2018-03-20 | 2019-12-24 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of OLED device |
| CN110635066A (en) * | 2019-09-26 | 2019-12-31 | 京东方科技集团股份有限公司 | Transparent display substrate, manufacturing method thereof and transparent display device |
| CN110993812B (en) * | 2019-11-08 | 2021-01-15 | 深圳市华星光电半导体显示技术有限公司 | Organic light emitting diode panel and manufacturing method thereof |
| CN111129345A (en) * | 2019-12-19 | 2020-05-08 | 深圳市华星光电半导体显示技术有限公司 | Organic light emitting diode display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104659063A (en) * | 2014-12-30 | 2015-05-27 | 京东方科技集团股份有限公司 | Display substrate, manufacture method thereof, display panel and mask plate |
| CN107221554B (en) * | 2017-06-08 | 2020-06-05 | 深圳市华星光电技术有限公司 | OLED device and manufacturing method thereof |
| CN107785381B (en) * | 2017-10-13 | 2020-12-22 | 深圳市华星光电半导体显示技术有限公司 | OLED panel manufacturing method and OLED panel |
| CN108417726A (en) * | 2018-03-20 | 2018-08-17 | 深圳市华星光电半导体显示技术有限公司 | OLED device and preparation method thereof |
| CN108417738B (en) * | 2018-03-20 | 2019-12-24 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of OLED device |
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2018
- 2018-03-20 CN CN201810232021.4A patent/CN108417738B/en active Active
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| Publication number | Publication date |
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| CN108417738A (en) | 2018-08-17 |
| WO2019179216A1 (en) | 2019-09-26 |
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