WO2019071711A1 - Manufacturing method for oled panel and oled panel - Google Patents

Manufacturing method for oled panel and oled panel Download PDF

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Publication number
WO2019071711A1
WO2019071711A1 PCT/CN2017/111433 CN2017111433W WO2019071711A1 WO 2019071711 A1 WO2019071711 A1 WO 2019071711A1 CN 2017111433 W CN2017111433 W CN 2017111433W WO 2019071711 A1 WO2019071711 A1 WO 2019071711A1
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layer
auxiliary electrode
disposed
via hole
electrode
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PCT/CN2017/111433
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French (fr)
Chinese (zh)
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张良芬
张晓星
任章淳
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深圳市华星光电半导体显示技术有限公司
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Priority to US15/578,393 priority Critical patent/US10756291B2/en
Publication of WO2019071711A1 publication Critical patent/WO2019071711A1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating an OLED panel and an OLED panel.
  • OLED Organic Light Emitting Display
  • OLED has self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast ratio, near 180° viewing angle, wide temperature range, and flexible display.
  • a large-area full-color display and many other advantages have been recognized by the industry as the most promising display device.
  • OLED can be divided into two types: passive matrix OLED (PMOLED) and active matrix OLED (AMOLED), namely direct addressing and thin film transistor (TFT) matrix addressing. class.
  • PMOLED passive matrix OLED
  • AMOLED active matrix OLED
  • TFT thin film transistor
  • the AMOLED has pixels arranged in an array, belongs to an active display type, has high luminous efficiency, and is generally used as a high-definition large-sized display device.
  • the OLED device generally includes a substrate, an anode disposed on the substrate, a hole injection layer disposed on the anode, a hole transport layer disposed on the hole injection layer, and a light-emitting layer disposed on the hole transport layer.
  • the principle of illumination of OLED devices is that semiconductor materials and organic luminescent materials are driven by electric fields, causing luminescence by carrier injection and recombination.
  • an OLED device generally uses an ITO pixel electrode and a metal electrode as anodes and cathodes of the device, respectively.
  • electrons and holes are injected from the cathode and the anode to the electron injection layer and the hole injection layer, respectively, and electrons and holes.
  • the holes migrate to the light-emitting layer through the electron transport layer and the hole transport layer, respectively, and meet in the light-emitting layer to form excitons and excite the light-emitting molecules, and the latter emits visible light through radiation relaxation.
  • the auxiliary electrode transmits the voltage to be applied to the cathode through the auxiliary electrode to solve the display unevenness caused by the IR drop of the cathode, so that the screen display of the OLED panel is uniformly stable.
  • An object of the present invention is to provide a method for fabricating an OLED panel, and the prepared OLED surface
  • the board has an auxiliary electrode connected to the cathode, which can improve the problem of uneven display of the OLED panel caused by the IR drop of the cathode.
  • Another object of the present invention is to provide an OLED panel having an auxiliary electrode connected to a cathode, which can improve the display unevenness of the OLED panel caused by the IR drop of the cathode.
  • the present invention first provides a method for fabricating an OLED panel, comprising the following steps:
  • Step S1 providing a TFT substrate
  • the TFT substrate includes: a base substrate; and a TFT and an auxiliary electrode disposed on the base substrate and spaced apart; the TFT has a source;
  • Step S2 forming a flat layer on the TFT substrate, patterning the flat layer to form a first via hole and a second via hole respectively exposing the source and the auxiliary electrode;
  • Step S3 forming a spaced anode and a lap electrode on the flat layer
  • the anode is connected to the source via the first via, and the lap electrode is connected to the auxiliary electrode via the second via;
  • Step S4 forming a plurality of metal protrusions having sharp corners on the lap electrode
  • Step S5 forming a pixel defining layer on the flat layer, the anode, and the lap electrode, the pixel defining layer is provided with a first opening exposing the anode, and the pixel defining layer exposing the lap electrode An area with metal protrusions thereon;
  • Step S6 sequentially forming a hole injection layer, a hole transport layer, and a light-emitting layer on the anode in the first opening; forming sequentially on the light-emitting layer, the pixel defining layer, the lap electrode, and the metal bump An electron transport layer, an electron injection layer, and a cathode;
  • Step S7 applying a voltage to the auxiliary electrode or the lap electrode, so that a portion of the electron transport layer and the electron injection layer corresponding to the sharp corner of the metal bump is burned to form a plurality of second openings,
  • the cathode is coupled to the metal bump through a second opening.
  • the TFT includes: an active layer disposed above the substrate, a gate insulating layer and a gate sequentially disposed on the active layer, and an interlayer insulating layer covering the active layer and the gate And a source and a drain disposed on the interlayer insulating layer and spaced apart;
  • the auxiliary electrode includes a first sub-auxiliary electrode disposed on the interlayer insulating layer and spaced apart from the source and the drain; the second via exposing the first sub-auxiliary electrode;
  • the interlayer insulating layer is provided with a third via hole and a fourth via hole respectively located on opposite sides of the active layer, and the source and the drain pass through the third via hole and the fourth via hole respectively Connected to both sides of the active layer.
  • the auxiliary electrode further includes a second sub-auxiliary electrode disposed on the base substrate;
  • the TFT substrate further includes: disposed on the base substrate and the second sub auxiliary electrode a spacer metal light shielding layer, and a buffer layer disposed on the base substrate and covering the metal light shielding layer and the second sub auxiliary electrode; the active layer is disposed on the buffer layer and corresponding to the metal light shielding layer
  • the interlayer insulating layer is disposed on the buffer layer and covers the active layer and the gate;
  • the buffer layer and the interlayer insulating layer are provided with a fifth via hole exposing the second sub auxiliary electrode, and the first sub auxiliary electrode is connected to the second sub auxiliary electrode via the fifth via hole.
  • the TFT substrate further includes: a passivation layer covering the interlayer insulating layer, the source, the drain, and the first sub-auxiliary electrode; the flat layer is formed on the passivation layer; the passivation layer a sixth via hole and a seventh via hole respectively exposing the source and the first sub auxiliary electrode; the first via hole and the second via hole respectively located in the sixth via hole and the seventh pass Above the hole.
  • the metal protrusions are in the form of a block or an elongated strip, and the shape of the longitudinal section of the metal protrusion is a triangle or a rectangle.
  • the invention also provides an OLED panel comprising:
  • the TFT substrate includes: a base substrate; and a TFT and an auxiliary electrode disposed on the base substrate and spaced apart; the TFT has a source;
  • a flat layer disposed on the TFT substrate, wherein the flat layer is provided with a first via hole and a second via hole respectively exposing the source and the auxiliary electrode;
  • a lap electrode disposed on the flat layer and spaced apart from the anode; the lap electrode is connected to the auxiliary electrode via the second via hole;
  • a pixel defining layer disposed on the flat layer, the anode, and the lap electrode; the pixel defining layer is provided with a first opening exposing the anode, and the pixel defining layer is exposed to the lap electrode a raised area;
  • a hole injection layer, a hole transport layer, and a light-emitting layer disposed in sequence on the anode in the first opening;
  • a cathode disposed on the electron injecting layer; the cathode being connected to the metal bump through the second opening.
  • the TFT includes: an active layer disposed above the substrate, a gate insulating layer and a gate sequentially disposed on the active layer, and an interlayer insulating layer covering the active layer and the gate And a source and a drain disposed on the interlayer insulating layer and spaced apart;
  • the auxiliary electrode is disposed on the interlayer insulating layer and is interposed between the source and the drain a first sub-auxiliary electrode; the second via exposing the first sub-auxiliary electrode;
  • the interlayer insulating layer is provided with a third via hole and a fourth via hole respectively located on opposite sides of the active layer, and the source and the drain pass through the third via hole and the fourth via hole respectively Connected to both sides of the active layer.
  • the auxiliary electrode further includes a second sub-auxiliary electrode disposed on the base substrate;
  • the TFT substrate further includes: a metal light shielding layer disposed on the base substrate and spaced apart from the second sub auxiliary electrode; and being disposed on the base substrate and covering the metal light shielding layer and the second sub a buffer layer of the auxiliary electrode; the active layer is disposed on the buffer layer and correspondingly located above the metal light shielding layer, the interlayer insulating layer is disposed on the buffer layer and covers the active layer and the gate;
  • the buffer layer and the interlayer insulating layer are provided with a fifth via hole exposing the second sub auxiliary electrode, and the first sub auxiliary electrode is connected to the second sub auxiliary electrode via the fifth via hole.
  • the TFT substrate further includes: a passivation layer covering the interlayer insulating layer, a source, a drain, and a first sub-auxiliary electrode; the flat layer is disposed on the passivation layer; a sixth via hole and a seventh via hole respectively exposing the source and the first sub auxiliary electrode; wherein the first via hole and the second via hole are respectively located in the sixth via hole and the seventh via hole Above.
  • the metal protrusions are in the form of a block or an elongated strip, and the longitudinal section of the metal protrusion has a triangular or rectangular shape.
  • the invention also provides a method for manufacturing an OLED panel, comprising the following steps:
  • Step S1 providing a TFT substrate
  • the TFT substrate includes: a base substrate; and a TFT and an auxiliary electrode disposed on the base substrate and spaced apart; the TFT has a source;
  • Step S2 forming a flat layer on the TFT substrate, patterning the flat layer to form a first via hole and a second via hole respectively exposing the source and the auxiliary electrode;
  • Step S3 forming a spaced anode and a lap electrode on the flat layer
  • the anode is connected to the source via the first via, and the lap electrode is connected to the auxiliary electrode via the second via;
  • Step S4 forming a plurality of metal protrusions having sharp corners on the lap electrode
  • Step S5 forming a pixel defining layer on the flat layer, the anode, and the lap electrode, the pixel defining layer is provided with a first opening exposing the anode, and the pixel defining layer exposing the lap electrode An area with metal protrusions thereon;
  • Step S6 sequentially forming a hole injection layer, a hole transport layer, and a light-emitting layer on the anode in the first opening; forming sequentially on the light-emitting layer, the pixel defining layer, the lap electrode, and the metal bump An electron transport layer, an electron injection layer, and a cathode;
  • Step S7 applying a voltage to the auxiliary electrode or the lap electrode to make the electron transport layer And a portion of the electron injecting layer corresponding to the sharp corner of the metal bump is burned to form a plurality of second openings, and the cathode is connected to the metal bump through the second opening;
  • the TFT includes: an active layer disposed above the substrate, a gate insulating layer and a gate sequentially disposed on the active layer, and an interlayer covering the active layer and the gate An insulating layer and a source and a drain disposed on the interlayer insulating layer;
  • the auxiliary electrode includes a first sub-auxiliary electrode disposed on the interlayer insulating layer and spaced apart from the source and the drain; the second via exposing the first sub-auxiliary electrode;
  • the interlayer insulating layer is provided with a third via hole and a fourth via hole respectively located on opposite sides of the active layer, and the source and the drain pass through the third via hole and the fourth via hole respectively Connected to both sides of the active layer;
  • the auxiliary electrode further includes a second sub-auxiliary electrode disposed on the base substrate;
  • the TFT substrate further includes: a metal light shielding layer disposed on the base substrate and spaced apart from the second sub auxiliary electrode, and disposed on the base substrate and covering the metal light shielding layer and the second sub auxiliary electrode a buffer layer; the active layer is disposed on the buffer layer and correspondingly located above the metal light shielding layer, the interlayer insulating layer is disposed on the buffer layer and covers the active layer and the gate;
  • the buffer layer and the interlayer insulating layer are provided with a fifth via hole exposing the second sub auxiliary electrode, and the first sub auxiliary electrode is connected to the second sub auxiliary electrode via the fifth via hole;
  • the TFT substrate further includes: a passivation layer covering the interlayer insulating layer, the source, the drain, and the first sub-auxiliary electrode; the flat layer is formed on the passivation layer; a sixth via hole and a seventh via hole respectively exposing the source and the first sub auxiliary electrode; wherein the first via hole and the second via hole are respectively located in the sixth via hole and the first via hole Above the seven vias;
  • the metal protrusion is in the form of a block or an elongated strip, and the shape of the longitudinal section of the metal protrusion is a triangle or a rectangle.
  • the present invention provides a method for fabricating an OLED panel, in which an anode connected to a source of a TFT and a lap electrode connected to an auxiliary electrode are formed on a TFT substrate having an auxiliary electrode, and on the lap electrode Producing a plurality of metal protrusions having sharp corners on the surface, so that after the entire surface of the electron transport layer, the electron injection layer, and the cathode are sequentially formed in the subsequent process, the electron transport layer and the electron injection layer correspond to the sharp corners of the metal bumps.
  • the position has a thin film thickness, and after applying a voltage to the auxiliary electrode or the lap electrode, the position of the electron transport layer and the electron injection layer corresponding to the sharp corner of the metal bump is caused by the impedance at the sharp corner of the metal bump. Burning off, so that the cathode and the auxiliary electrode are connected, so that the OLED panel can input a signal to the cathode through the auxiliary electrode during display, effectively improving the problem of uneven display of the OLED panel caused by the IR drop of the cathode.
  • the OLED panel provided by the invention has an auxiliary electrode connected to the cathode, which can improve the problem of uneven display of the OLED panel caused by the IR drop of the cathode.
  • FIG. 1 is a flow chart of a method of fabricating an OLED panel of the present invention
  • step S1 is a schematic diagram of step S1 of the method for fabricating an OLED panel of the present invention
  • step S2 is a schematic diagram of step S2 of the method for fabricating an OLED panel of the present invention
  • step S3 is a schematic diagram of step S3 of the method for fabricating an OLED panel of the present invention.
  • FIG. 5 is a schematic diagram of step S4 of the method for fabricating an OLED panel of the present invention.
  • step S5 is a schematic diagram of step S5 of the method for fabricating an OLED panel of the present invention.
  • step S6 is a schematic diagram of step S6 of the method for fabricating an OLED panel of the present invention.
  • FIG. 8 is an enlarged schematic view showing a position of a metal bump after the step S6 in the method for fabricating the OLED panel of the present invention.
  • FIG. 9 is a schematic view showing a step S7 of the method for fabricating an OLED panel of the present invention and a schematic structural view of the OLED panel of the present invention
  • FIG. 10 is an enlarged schematic view showing the position of the metal bump after the step S7 of the method for fabricating the OLED panel of the present invention.
  • the present invention provides a method for fabricating an OLED panel, including the following steps:
  • Step S1 please refer to FIG. 2, providing a TFT substrate 100;
  • the TFT substrate 100 includes a base substrate 110 and a TFT 120 and an auxiliary electrode 130 disposed on the base substrate 110.
  • the TFT 120 has a source 121.
  • the TFT 120 is a top gate thin film transistor, and includes: an active layer 122 disposed on the base substrate 110, a gate insulating layer 123 and a gate electrode 124 sequentially disposed on the source layer 122, an interlayer insulating layer 125 covering the active layer 122 and the gate electrode 124, and a source disposed on the interlayer insulating layer 125 and spaced apart The pole 121 and the drain 126.
  • the TFT 120 can also be a Bottom gate thin film transistor, which does not affect the implementation of the present invention.
  • the TFT 120 may be a low temperature polysilicon (LTPS) thin film transistor, an oxide.
  • LTPS low temperature polysilicon
  • the auxiliary electrode 130 includes a first sub-auxiliary electrode 131 disposed on the interlayer insulating layer 125 and spaced apart from the source 121 and the drain 126;
  • the interlayer insulating layer 125 is provided with a third via 1251 and a fourth via 1252 respectively located above the two sides of the active layer 122.
  • the source 121 and the drain 126 pass through the third pass respectively.
  • the hole 1251 and the fourth via 1252 are connected to both sides of the active layer 122.
  • the auxiliary electrode 130 further includes a second sub-auxiliary electrode 132 disposed on the base substrate 110.
  • the TFT 120 in the embodiment shown in FIG. 2 is a top gate type thin film transistor
  • the TFT substrate 100 further includes: disposed on the base substrate 110 and spaced apart from the second sub auxiliary electrode 132 a metal light shielding layer 140, and a buffer layer 150 disposed on the base substrate 110 and covering the metal light shielding layer 140 and the second sub auxiliary electrode 132; the active layer 122 is disposed on the buffer layer 150
  • the interlayer insulating layer 125 is disposed on the buffer layer 150 and covers the active layer 122 and the gate electrode 124.
  • the buffer layer 150 and the interlayer insulating layer 125 are disposed on the buffer layer 150.
  • the second auxiliary electrode 132 can be formed by the same mask as the metal light shielding layer 140.
  • the TFT substrate 100 further includes: a passivation layer 160 covering the interlayer insulating layer 125, the source 121, the drain 126, and the first sub-auxiliary electrode 131;
  • the layer 160 is provided with a sixth via 161 and a seventh via 162 that expose the source 121 and the first sub-auxiliary electrode 131, respectively.
  • Step S2 referring to FIG. 3, a flat layer 200 is formed on the TFT substrate 100, and the flat layer 200 is patterned to form first vias 210 and the first vias exposing the source 121 and the auxiliary electrode 130, respectively. Two vias 220.
  • the flat layer 200 is formed on the passivation layer 160 , and the first via hole 210 and the second via hole 220 are respectively located above the sixth via hole 161 and the seventh via hole 162 .
  • the second via 220 exposes the first sub-auxiliary electrode 131.
  • Step S3 please refer to FIG. 4, forming a spacer anode 310 and a lap electrode 320 on the flat layer 200;
  • the anode 310 is connected to the source 131 via the first via 210, and the lap electrode 320 is connected to the auxiliary electrode 130 via the second via 220.
  • the anode 310 and the lap electrode 320 may be selected from the same material or different materials.
  • the thickness can be the same or different.
  • the anode material layer can be patterned by forming an anode material layer on the flat layer 200 to obtain an anode. 310 and lap electrode 320.
  • Step S4 referring to FIG. 5, a plurality of metal protrusions 400 having sharp corners on the surface are formed on the lap electrode 320.
  • the metal protrusions 400 may be in the form of a block, an elongated strip, or other shapes.
  • the shape of the longitudinal section of the metal protrusion 400 is a rectangle, that is, a sharp corner exists at the boundary between the upper surface and the side surface of the metal protrusion 400.
  • the metal protrusion The longitudinal profile of the 400 can also be selected from triangles or other surfaces having sharp corners.
  • Step S5 referring to FIG. 6, a pixel defining layer 500 is formed on the flat layer 200, the anode 310, and the lap electrode 320.
  • the pixel defining layer 500 is provided with a first opening 510 exposing the anode 310.
  • the pixel defining layer 500 exposes a region of the lap electrode 320 on which the metal bump 400 is disposed.
  • the first opening 510 defines a pixel area of the OLED panel.
  • the hydrophilicity and hydrophobicity of the pixel defining layer 500 is determined according to the manner in which the OLED functional layer (hole injection layer, hole transport layer, light emitting layer, electron transport layer, and electron injection layer) is subsequently formed in the first opening 510.
  • the OLED functional layer is subsequently formed by evaporation in the first opening 510
  • the pixel defining layer 500 selects a conventional non-hydrophobic material, and then the OLED functional layer is formed by inkjet printing in the first opening 510.
  • the pixel defining layer 500 selects a conventional hydrophobic material.
  • Step S6 referring to FIG. 7 and FIG. 8, a hole injection layer 610, a hole transport layer 620, and a light-emitting layer 630 are sequentially formed on the anode 310 in the first opening 510; and the light-emitting layer 630 and the pixel are formed on the anode 310.
  • An electron transport layer 640, an electron injection layer 650, and a cathode 700 are sequentially formed on the defining layer 500, the lap electrode 320, and the metal bump 400.
  • the lap electrode 320 is provided with a metal bump 400 having a sharp corner on the surface, the electron transport layer 640 and the electron injection layer 650 are formed on the metal bump 400, and the electron transport layer 640 is formed. And the electron injection layer 650 has a thin film thickness in a region corresponding to the sharp corner of the metal bump 400.
  • Step S7 referring to FIG. 9 and FIG. 10, applying a voltage to the auxiliary electrode 130 or the lap electrode 320, so that the electron transport layer 640 and the electron injection layer 650 correspond to the sharp corners of the metal bump 400.
  • the portion is burned to form a plurality of second openings 641, and the cathode 700 is connected to the metal bumps 400 through the second openings 641.
  • the electron transport layer 640 and the electron injection layer 650 correspond to each other.
  • the sharp corner region of the metal bump 400 has a thin film thickness, and at the same time, the metal bump 400 has a large impedance at its sharp corner after being energized to the auxiliary electrode 130 or the lap electrode 320, thereby releasing a large amount of heat, and electrons.
  • the transmission layer 640 and the electron injection layer 650 are both made of an organic material. Therefore, the heat generated at the corners of the metal bump 400 burns the corresponding portions of the electron transport layer 640 and the electron injection layer 650, and the sub-transport layer 640 and the electrons are burned.
  • a portion of the injection layer 650 corresponding to the sharp corner of the metal bump 400 forms a plurality of second openings 641, thereby connecting the cathode 700 and the metal bump 400, thereby turning on the cathode 700 and the lap electrode 320 and the auxiliary electrode 130.
  • the obtained OLED panel can input a signal to the cathode 700 through the auxiliary electrode 130 at the time of display, thereby achieving an effect of improving display unevenness of the OLED panel caused by the IR drop of the cathode 700.
  • the present invention further provides an OLED panel fabricated by using the above method for fabricating an OLED panel, comprising:
  • the TFT substrate 100 includes: a substrate substrate 110, and a TFT 120 and an auxiliary electrode 130 disposed on the substrate substrate 110; the TFT 120 has a source 121;
  • the flat layer 200 disposed on the TFT substrate 100, the flat layer 200 is provided with a first via 210 and a second via 220 respectively exposing the source 121 and the auxiliary electrode 130;
  • a lap electrode 320 disposed on the flat layer 200 and spaced apart from the anode 310; the lap electrode 320 is connected to the auxiliary electrode 130 via the second via 220;
  • a pixel disposed on the planarization layer 200, the anode 310, and the lap electrode 320 defines a layer 500;
  • the pixel defining layer 500 is provided with a first opening 510 exposing the anode 310, and the pixel defining layer 500 Exposing a region of the lap electrode 320 on which the metal bump 400 is disposed;
  • a hole injection layer 610, a hole transport layer 620 and a light-emitting layer 630 disposed on the anode 310 in the first opening 510;
  • the electron transport layer 640 and the electron injection layer 650 are sequentially disposed on the light emitting layer 630, the pixel defining layer 500, the lap electrode 320, and the metal bump 400.
  • the electron transport layer 640 and the electron injection layer 650 correspond to a plurality of a plurality of second openings 641 are provided at the sharp corners of the metal protrusions 400;
  • the TFT 120 is a top gate thin film transistor, and includes an active layer 122 disposed on the base substrate 110. a gate insulating layer 123 and a gate electrode 124 disposed on the source layer 122 in sequence, covering the active layer 122 and An interlayer insulating layer 125 of the gate electrode 124 and a source electrode 121 and a drain electrode 126 which are provided on the interlayer insulating layer 125 and spaced apart from each other.
  • the TFT 120 can also be a Bottom gate thin film transistor, which does not affect the implementation of the present invention.
  • the TFT 120 may be a low temperature polysilicon (LTPS) thin film transistor, an oxide semiconductor (Oxide) thin film transistor, a solid phase crystallization (SPC) thin film transistor, or other thin film transistor commonly used in OLED display technology.
  • LTPS low temperature polysilicon
  • Oxide oxide semiconductor
  • SPC solid phase crystallization
  • the auxiliary electrode 130 includes a first sub auxiliary electrode 131 disposed on the interlayer insulating layer 125 and spaced apart from the source 121 and the drain 126 ;
  • the interlayer insulating layer 125 is provided with a third via 1251 and a fourth via 1252 respectively located above the two sides of the active layer 122.
  • the source 121 and the drain 126 pass through the third pass respectively.
  • the hole 1251 and the fourth via 1252 are connected to both sides of the active layer 122.
  • the auxiliary electrode 130 further includes a second sub-auxiliary electrode 132 disposed on the base substrate 110.
  • the TFT 120 in the embodiment shown in FIG. 9 is a top gate type thin film transistor
  • the TFT substrate 100 further includes: disposed on the base substrate 110 and spaced apart from the second sub auxiliary electrode 132 a metal light shielding layer 140, and a buffer layer 150 disposed on the base substrate 110 and covering the metal light shielding layer 140 and the second sub auxiliary electrode 132; the active layer 122 is disposed on the buffer layer 150
  • the interlayer insulating layer 125 is disposed on the buffer layer 150 and covers the active layer 122 and the gate electrode 124.
  • the buffer layer 150 and the interlayer insulating layer 125 are disposed on the buffer layer 150.
  • the TFT substrate 100 further includes: a passivation layer 160 covering the interlayer insulating layer 125, the source 121, the drain 126, and the first sub auxiliary electrode 131;
  • the layer 160 is provided with a sixth via 161 and a seventh via 162 that expose the source 121 and the first sub-auxiliary electrode 131, respectively.
  • the flat layer 200 is formed on the passivation layer 160 , and the first via hole 210 and the second via hole 220 are respectively located in the sixth via hole 161 and the seventh via hole. Above the 162, the second via 220 exposes the first sub-auxiliary electrode 131.
  • the anode 310 and the lap electrode 320 may be selected from the same material or different materials, and the thickness may be the same or different.
  • the metal protrusions 400 may be in the form of a block, an elongated strip, or other shapes.
  • the shape of the longitudinal section of the metal protrusion 400 is a rectangle, that is, a sharp corner exists at the boundary between the upper surface and the side surface of the metal protrusion 400.
  • the metal protrusion The longitudinal profile of the 400 can also be selected from triangles or other surfaces having sharp corners.
  • the first opening 510 defines a pixel area of the OLED panel.
  • the hydrophilicity and hydrophobicity of the pixel defining layer 500 is determined according to the manner in which the hole injection layer 610, the hole transport layer 620, the light emitting layer 630, the electron transport layer 640, and the electron injection layer 650 are fabricated, when the hole injection layer 610 is empty.
  • the hole transport layer 620, the light-emitting layer 630, the electron transport layer 640, and the electron injection layer 650 are all formed by evaporation.
  • the pixel defining layer 500 selects a conventional non-hydrophobic material, and the hole injection layer 610 and the hole transport layer 620.
  • the light-emitting layer 630, the electron transport layer 640, and the electron injection layer 650 are all formed by printing, and the pixel defining layer 500 selects a conventional hydrophobic material.
  • a portion of the electron transport layer 640 and the electron injection layer 650 corresponding to the sharp corner of the metal bump 400 forms a plurality of second openings 641.
  • the cathode 700 and the metal bump 400 are connected, thereby turning on the cathode 700 and the lap electrode 320 and the auxiliary electrode 130, so that the OLED panel can display a signal to the cathode 700 through the auxiliary electrode 130 during display, thereby improving the cathode.
  • the IR drop of 700 results in an uneven display of the OLED panel.
  • an anode connected to the source of the TFT and a lap electrode connected to the auxiliary electrode are formed on the TFT substrate having the auxiliary electrode, and the lap electrode is formed on the lap electrode.
  • the surface has a sharp metal protrusion, so that after the entire surface of the electron transport layer, the electron injection layer, and the cathode are sequentially formed in the subsequent process, the electron transport layer and the electron injection layer have positions corresponding to the sharp corners of the metal bumps. a thin film thickness, and further, by applying a voltage to the auxiliary electrode or the lap electrode, the electron transfer layer, the electron injection layer, and the sharp corner of the metal bump are burned off due to the large impedance at the sharp corner of the metal bump.
  • the cathode and the auxiliary electrode are connected, so that the OLED panel can input a signal to the cathode through the auxiliary electrode during display, which effectively improves the problem of uneven display of the OLED panel caused by the IR drop of the cathode.
  • the OLED panel of the present invention has an auxiliary electrode connected to the cathode, which can improve the problem of uneven display of the OLED panel caused by the IR drop of the cathode.

Abstract

A manufacturing method for an organic light emitting display (OLED) panel and an OLED panel. The manufacturing method for an OLED panel comprises: on a thin film transistor (TFT) substrate (100), manufacturing an anode (310) that is connected to a source (121) of a TFT (120), and a lap joint electrode (320) that is connected to an auxiliary electrode (130); manufacturing multiple metal protrusions (400) that are provided with sharp corners on the lap joint electrode (320) such that the positions of an electron transmission layer (640) and an electron injection layer (650) corresponding to the sharp corners of the metal protrusions (400) have a thinner film thickness after sequentially forming entire surfaces of the electron transmission layer (640), the electron injection layer (650) and a cathode (700) during a subsequent process; burning off the positions of the electron transmission layer (640) and the electron injection layer (650) corresponding to the sharp corners of the metal protrusions (400) due to a large impedance at the sharp corners of the metal protrusions (400) after applying a voltage to the auxiliary electrode (130) or the lap joint electrode (320), thereby causing the cathode (700) and the auxiliary electrode (130) to be connected such that the OLED panel may input signals to the cathode (700) by means of the auxiliary electrode (130) during display, thus effectively improving the problem wherein display by the OLED panel is uneven due to the IR drop of the cathode (400).

Description

OLED面板的制作方法及OLED面板OLED panel manufacturing method and OLED panel 技术领域Technical field
本发明涉及显示技术领域，尤其涉及一种OLED面板的制作方法及OLED面板。The present invention relates to the field of display technologies, and in particular, to a method for fabricating an OLED panel and an OLED panel.
背景技术Background technique
有机发光二极管显示装置(Organic Light Emitting Display，OLED)具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。Organic Light Emitting Display (OLED) has self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast ratio, near 180° viewing angle, wide temperature range, and flexible display. A large-area full-color display and many other advantages have been recognized by the industry as the most promising display device.
OLED按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类，即直接寻址和薄膜晶体管(TFT)矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。According to the driving method, OLED can be divided into two types: passive matrix OLED (PMOLED) and active matrix OLED (AMOLED), namely direct addressing and thin film transistor (TFT) matrix addressing. class. Among them, the AMOLED has pixels arranged in an array, belongs to an active display type, has high luminous efficiency, and is generally used as a high-definition large-sized display device.
OLED器件通常包括：基板、设于基板上的阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层、及设于电子注入层上的阴极。OLED器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。具体的，OLED器件通常采用ITO像素电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子注入层和空穴注入层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。The OLED device generally includes a substrate, an anode disposed on the substrate, a hole injection layer disposed on the anode, a hole transport layer disposed on the hole injection layer, and a light-emitting layer disposed on the hole transport layer. An electron transport layer on the light-emitting layer, an electron injection layer provided on the electron transport layer, and a cathode provided on the electron injection layer. The principle of illumination of OLED devices is that semiconductor materials and organic luminescent materials are driven by electric fields, causing luminescence by carrier injection and recombination. Specifically, an OLED device generally uses an ITO pixel electrode and a metal electrode as anodes and cathodes of the device, respectively. Under a certain voltage, electrons and holes are injected from the cathode and the anode to the electron injection layer and the hole injection layer, respectively, and electrons and holes. The holes migrate to the light-emitting layer through the electron transport layer and the hole transport layer, respectively, and meet in the light-emitting layer to form excitons and excite the light-emitting molecules, and the latter emits visible light through radiation relaxation.
大尺寸的OLED面板在工作时会因为其阴极具有较大的电阻而在其不同位置产生不同的IR压降(IR Drop)，导致OLED面板的亮度不均，因此，需要额外制作与阴极连接的辅助电极，通过辅助电极传输应施加在阴极上的电压，解决阴极的IR压降导致的显示不均，使OLED面板的画面显示均一稳定。Large-sized OLED panels will generate different IR drops at different positions due to their larger resistance at the cathode, resulting in uneven brightness of the OLED panel. Therefore, additional fabrication of the cathode is required. The auxiliary electrode transmits the voltage to be applied to the cathode through the auxiliary electrode to solve the display unevenness caused by the IR drop of the cathode, so that the screen display of the OLED panel is uniformly stable.
发明内容Summary of the invention
本发明的目的在于提供一种OLED面板的制作方法，制得的OLED面 板具有与阴极连接的辅助电极，能够改善由阴极的IR压降导致的OLED面板显示不均的问题。An object of the present invention is to provide a method for fabricating an OLED panel, and the prepared OLED surface The board has an auxiliary electrode connected to the cathode, which can improve the problem of uneven display of the OLED panel caused by the IR drop of the cathode.
本发明的另一目的在于提供一种OLED面板，具有与阴极连接的辅助电极，能够改善由阴极的IR压降导致的OLED面板显示不均的问题。Another object of the present invention is to provide an OLED panel having an auxiliary electrode connected to a cathode, which can improve the display unevenness of the OLED panel caused by the IR drop of the cathode.
为实现上述目的，本发明首先提供一种OLED面板的制作方法，包括如下步骤：To achieve the above objective, the present invention first provides a method for fabricating an OLED panel, comprising the following steps:
步骤S1、提供TFT基板；Step S1, providing a TFT substrate;
所述TFT基板包括：衬底基板、及设于所述衬底基板上且间隔的TFT及辅助电极；所述TFT具有源极；The TFT substrate includes: a base substrate; and a TFT and an auxiliary electrode disposed on the base substrate and spaced apart; the TFT has a source;
步骤S2、在所述TFT基板上形成平坦层，对所述平坦层进行图案化，形成分别暴露所述源极、及辅助电极的第一过孔、及第二过孔；Step S2, forming a flat layer on the TFT substrate, patterning the flat layer to form a first via hole and a second via hole respectively exposing the source and the auxiliary electrode;
步骤S3、在所述平坦层上形成间隔的阳极、及搭接电极；Step S3, forming a spaced anode and a lap electrode on the flat layer;
所述阳极经第一过孔与源极连接，所述搭接电极经第二过孔与所述辅助电极连接；The anode is connected to the source via the first via, and the lap electrode is connected to the auxiliary electrode via the second via;
步骤S4、在所述搭接电极上形成多个表面具有尖角的金属凸起；Step S4, forming a plurality of metal protrusions having sharp corners on the lap electrode;
步骤S5、在所述平坦层、阳极、及搭接电极上形成像素界定层，所述像素界定层上设有暴露所述阳极的第一开口，且所述像素界定层暴露所述搭接电极上设有金属凸起的区域；Step S5, forming a pixel defining layer on the flat layer, the anode, and the lap electrode, the pixel defining layer is provided with a first opening exposing the anode, and the pixel defining layer exposing the lap electrode An area with metal protrusions thereon;
步骤S6、于所述第一开口内的阳极上依次形成空穴注入层、空穴传输层、及发光层；在所述发光层、像素界定层、搭接电极、及金属凸起上依次形成电子传输层、电子注入层、及阴极；Step S6, sequentially forming a hole injection layer, a hole transport layer, and a light-emitting layer on the anode in the first opening; forming sequentially on the light-emitting layer, the pixel defining layer, the lap electrode, and the metal bump An electron transport layer, an electron injection layer, and a cathode;
步骤S7、向所述辅助电极或搭接电极上施加电压，使所述电子传输层及电子注入层上与所述金属凸起的尖角对应的部分被烧掉而形成多个第二开口，所述阴极通过第二开口与所述金属凸起连接。Step S7, applying a voltage to the auxiliary electrode or the lap electrode, so that a portion of the electron transport layer and the electron injection layer corresponding to the sharp corner of the metal bump is burned to form a plurality of second openings, The cathode is coupled to the metal bump through a second opening.
所述TFT包括：设于所述衬底基板上方的有源层、于所述有源层上依次设置的栅极绝缘层及栅极、覆盖所述有源层及栅极的层间绝缘层、及设于所述层间绝缘层上且间隔的源极及漏极；The TFT includes: an active layer disposed above the substrate, a gate insulating layer and a gate sequentially disposed on the active layer, and an interlayer insulating layer covering the active layer and the gate And a source and a drain disposed on the interlayer insulating layer and spaced apart;
所述辅助电极包括设于所述层间绝缘层上且与所述源极、及漏极均间隔的第一子辅助电极；所述第二过孔暴露出所述第一子辅助电极；The auxiliary electrode includes a first sub-auxiliary electrode disposed on the interlayer insulating layer and spaced apart from the source and the drain; the second via exposing the first sub-auxiliary electrode;
所述层间绝缘层上设有分别位于所述有源层两侧上方的第三过孔及第四过孔，所述源极及漏极分别通过所述第三过孔及第四过孔与所述有源层的两侧连接。The interlayer insulating layer is provided with a third via hole and a fourth via hole respectively located on opposite sides of the active layer, and the source and the drain pass through the third via hole and the fourth via hole respectively Connected to both sides of the active layer.
所述辅助电极还包括设于所述衬底基板上的第二子辅助电极；The auxiliary electrode further includes a second sub-auxiliary electrode disposed on the base substrate;
所述TFT基板还包括：设于所述衬底基板上且与所述第二子辅助电极 间隔的金属遮光层、及设于所述衬底基板上覆盖金属遮光层及第二子辅助电极的缓冲层；所述有源层设于所述缓冲层上且对应位于金属遮光层上方，所述层间绝缘层设于所述缓冲层上且覆盖所述有源层及栅极；The TFT substrate further includes: disposed on the base substrate and the second sub auxiliary electrode a spacer metal light shielding layer, and a buffer layer disposed on the base substrate and covering the metal light shielding layer and the second sub auxiliary electrode; the active layer is disposed on the buffer layer and corresponding to the metal light shielding layer The interlayer insulating layer is disposed on the buffer layer and covers the active layer and the gate;
所述缓冲层及层间绝缘层上设有暴露所述第二子辅助电极的第五过孔，所述第一子辅助电极经所述第五过孔与所述第二子辅助电极连接。The buffer layer and the interlayer insulating layer are provided with a fifth via hole exposing the second sub auxiliary electrode, and the first sub auxiliary electrode is connected to the second sub auxiliary electrode via the fifth via hole.
所述TFT基板还包括：覆盖所述层间绝缘层、源极、漏极、及第一子辅助电极的钝化层；所述平坦层形成于所述钝化层上；所述钝化层上设有分别暴露出所述源极及第一子辅助电极的第六过孔及第七过孔；所述第一过孔及第二过孔分别位于所述第六过孔及第七过孔上方。The TFT substrate further includes: a passivation layer covering the interlayer insulating layer, the source, the drain, and the first sub-auxiliary electrode; the flat layer is formed on the passivation layer; the passivation layer a sixth via hole and a seventh via hole respectively exposing the source and the first sub auxiliary electrode; the first via hole and the second via hole respectively located in the sixth via hole and the seventh pass Above the hole.
所述金属凸起为块状或长条状，所述金属凸起纵剖面的形状为三角形或矩形。The metal protrusions are in the form of a block or an elongated strip, and the shape of the longitudinal section of the metal protrusion is a triangle or a rectangle.
本发明还提供一种OLED面板，包括：The invention also provides an OLED panel comprising:
TFT基板；所述TFT基板包括：衬底基板、及设于所述衬底基板上且间隔的TFT及辅助电极；所述TFT具有源极；a TFT substrate; the TFT substrate includes: a base substrate; and a TFT and an auxiliary electrode disposed on the base substrate and spaced apart; the TFT has a source;
设于所述TFT基板上的平坦层，所述平坦层上设有分别暴露所述源极及辅助电极的第一过孔、及第二过孔；a flat layer disposed on the TFT substrate, wherein the flat layer is provided with a first via hole and a second via hole respectively exposing the source and the auxiliary electrode;
设于所述平坦层上的阳极；所述阳极经第一过孔与源极连接；An anode disposed on the flat layer; the anode is connected to the source via the first via;
设于所述平坦层上且与所述阳极间隔的搭接电极；所述搭接电极经第二过孔与辅助电极连接；a lap electrode disposed on the flat layer and spaced apart from the anode; the lap electrode is connected to the auxiliary electrode via the second via hole;
设于所述搭接电极上的多个表面具有尖角的金属凸起；a plurality of surfaces provided on the lap electrode having sharp corners of metal protrusions;
设于所述平坦层、阳极、及搭接电极上的像素界定层；所述像素界定层上设有暴露所述阳极的第一开口，且所述像素界定层暴露所述搭接电极上设有金属凸起的区域；a pixel defining layer disposed on the flat layer, the anode, and the lap electrode; the pixel defining layer is provided with a first opening exposing the anode, and the pixel defining layer is exposed to the lap electrode a raised area;
于所述第一开口内的阳极上依次设置的空穴注入层、空穴传输层、及发光层；a hole injection layer, a hole transport layer, and a light-emitting layer disposed in sequence on the anode in the first opening;
于所述发光层、像素界定层、搭接电极、及金属凸起上依次设置的电子传输层、电子注入层；所述电子传输层及电子注入层对应多个金属凸起的尖角设有多个第二开口；An electron transport layer and an electron injection layer disposed on the light-emitting layer, the pixel defining layer, the lap electrode, and the metal bump; the electron transport layer and the electron injection layer are disposed at a sharp corner corresponding to the plurality of metal bumps a plurality of second openings;
以及设于所述电子注入层上的阴极；所述阴极通过所述第二开口与金属凸起连接。And a cathode disposed on the electron injecting layer; the cathode being connected to the metal bump through the second opening.
所述TFT包括：设于所述衬底基板上方的有源层、于所述有源层上依次设置的栅极绝缘层及栅极、覆盖所述有源层及栅极的层间绝缘层、及设于所述层间绝缘层上且间隔的源极及漏极；The TFT includes: an active layer disposed above the substrate, a gate insulating layer and a gate sequentially disposed on the active layer, and an interlayer insulating layer covering the active layer and the gate And a source and a drain disposed on the interlayer insulating layer and spaced apart;
所述辅助电极包括设于所述层间绝缘层上且与所述源极、及漏极均间 隔的第一子辅助电极；所述第二过孔暴露出所述第一子辅助电极；The auxiliary electrode is disposed on the interlayer insulating layer and is interposed between the source and the drain a first sub-auxiliary electrode; the second via exposing the first sub-auxiliary electrode;
所述层间绝缘层上设有分别位于所述有源层两侧上方的第三过孔及第四过孔，所述源极及漏极分别通过所述第三过孔及第四过孔与所述有源层的两侧连接。The interlayer insulating layer is provided with a third via hole and a fourth via hole respectively located on opposite sides of the active layer, and the source and the drain pass through the third via hole and the fourth via hole respectively Connected to both sides of the active layer.
所述辅助电极还包括设于所述衬底基板上的第二子辅助电极；The auxiliary electrode further includes a second sub-auxiliary electrode disposed on the base substrate;
所述TFT基板还包括：设于所述衬底基板上且与所述第二子辅助电极间隔的金属遮光层、及设于所述衬底基板上且覆盖所述金属遮光层及第二子辅助电极的缓冲层；所述有源层设于所述缓冲层上且对应位于金属遮光层上方，所述层间绝缘层设于所述缓冲层上且覆盖所述有源层及栅极；The TFT substrate further includes: a metal light shielding layer disposed on the base substrate and spaced apart from the second sub auxiliary electrode; and being disposed on the base substrate and covering the metal light shielding layer and the second sub a buffer layer of the auxiliary electrode; the active layer is disposed on the buffer layer and correspondingly located above the metal light shielding layer, the interlayer insulating layer is disposed on the buffer layer and covers the active layer and the gate;
所述缓冲层及层间绝缘层上设有暴露所述第二子辅助电极的第五过孔，所述第一子辅助电极经所述第五过孔与所述第二子辅助电极连接。The buffer layer and the interlayer insulating layer are provided with a fifth via hole exposing the second sub auxiliary electrode, and the first sub auxiliary electrode is connected to the second sub auxiliary electrode via the fifth via hole.
所述TFT基板还包括：覆盖所述层间绝缘层、源极、漏极、第一子辅助电极的钝化层；所述平坦层设于所述钝化层上；所述钝化层上设有分别暴露出所述源极及第一子辅助电极的第六过孔及第七过孔；所述第一过孔及第二过孔分别位于所述第六过孔及第七过孔上方。The TFT substrate further includes: a passivation layer covering the interlayer insulating layer, a source, a drain, and a first sub-auxiliary electrode; the flat layer is disposed on the passivation layer; a sixth via hole and a seventh via hole respectively exposing the source and the first sub auxiliary electrode; wherein the first via hole and the second via hole are respectively located in the sixth via hole and the seventh via hole Above.
所述金属凸起为块状或长条状，所述金属凸起的纵剖面的形状为三角形或矩形。The metal protrusions are in the form of a block or an elongated strip, and the longitudinal section of the metal protrusion has a triangular or rectangular shape.
本发明还提供一种OLED面板的制作方法，包括如下步骤：The invention also provides a method for manufacturing an OLED panel, comprising the following steps:
步骤S1、提供TFT基板；Step S1, providing a TFT substrate;
所述TFT基板包括：衬底基板、及设于所述衬底基板上且间隔的TFT及辅助电极；所述TFT具有源极；The TFT substrate includes: a base substrate; and a TFT and an auxiliary electrode disposed on the base substrate and spaced apart; the TFT has a source;
步骤S2、在所述TFT基板上形成平坦层，对所述平坦层进行图案化，形成分别暴露所述源极、及辅助电极的第一过孔、及第二过孔；Step S2, forming a flat layer on the TFT substrate, patterning the flat layer to form a first via hole and a second via hole respectively exposing the source and the auxiliary electrode;
步骤S3、在所述平坦层上形成间隔的阳极、及搭接电极；Step S3, forming a spaced anode and a lap electrode on the flat layer;
所述阳极经第一过孔与源极连接，所述搭接电极经第二过孔与所述辅助电极连接；The anode is connected to the source via the first via, and the lap electrode is connected to the auxiliary electrode via the second via;
步骤S4、在所述搭接电极上形成多个表面具有尖角的金属凸起；Step S4, forming a plurality of metal protrusions having sharp corners on the lap electrode;
步骤S5、在所述平坦层、阳极、及搭接电极上形成像素界定层，所述像素界定层上设有暴露所述阳极的第一开口，且所述像素界定层暴露所述搭接电极上设有金属凸起的区域；Step S5, forming a pixel defining layer on the flat layer, the anode, and the lap electrode, the pixel defining layer is provided with a first opening exposing the anode, and the pixel defining layer exposing the lap electrode An area with metal protrusions thereon;
步骤S6、于所述第一开口内的阳极上依次形成空穴注入层、空穴传输层、及发光层；在所述发光层、像素界定层、搭接电极、及金属凸起上依次形成电子传输层、电子注入层、及阴极；Step S6, sequentially forming a hole injection layer, a hole transport layer, and a light-emitting layer on the anode in the first opening; forming sequentially on the light-emitting layer, the pixel defining layer, the lap electrode, and the metal bump An electron transport layer, an electron injection layer, and a cathode;
步骤S7、向所述辅助电极或搭接电极上施加电压，使所述电子传输层 及电子注入层上与所述金属凸起的尖角对应的部分被烧掉而形成多个第二开口，所述阴极通过第二开口与所述金属凸起连接；Step S7, applying a voltage to the auxiliary electrode or the lap electrode to make the electron transport layer And a portion of the electron injecting layer corresponding to the sharp corner of the metal bump is burned to form a plurality of second openings, and the cathode is connected to the metal bump through the second opening;
其中，所述TFT包括：设于所述衬底基板上方的有源层、于所述有源层上依次设置的栅极绝缘层及栅极、覆盖所述有源层及栅极的层间绝缘层、及设于层间绝缘层上间隔的源极及漏极；The TFT includes: an active layer disposed above the substrate, a gate insulating layer and a gate sequentially disposed on the active layer, and an interlayer covering the active layer and the gate An insulating layer and a source and a drain disposed on the interlayer insulating layer;
所述辅助电极包括设于所述层间绝缘层上且与所述源极、及漏极均间隔的第一子辅助电极；所述第二过孔暴露出所述第一子辅助电极；The auxiliary electrode includes a first sub-auxiliary electrode disposed on the interlayer insulating layer and spaced apart from the source and the drain; the second via exposing the first sub-auxiliary electrode;
所述层间绝缘层上设有分别位于所述有源层两侧上方的第三过孔及第四过孔，所述源极及漏极分别通过所述第三过孔及第四过孔与所述有源层的两侧连接；The interlayer insulating layer is provided with a third via hole and a fourth via hole respectively located on opposite sides of the active layer, and the source and the drain pass through the third via hole and the fourth via hole respectively Connected to both sides of the active layer;
其中，所述辅助电极还包括设于所述衬底基板上的第二子辅助电极；The auxiliary electrode further includes a second sub-auxiliary electrode disposed on the base substrate;
所述TFT基板还包括：设于所述衬底基板上且与第二子辅助电极间隔的金属遮光层、及设于所述衬底基板上且覆盖所述金属遮光层及第二子辅助电极的缓冲层；所述有源层设于所述缓冲层上且对应位于金属遮光层上方，所述层间绝缘层设于所述缓冲层上且覆盖所述有源层及栅极；The TFT substrate further includes: a metal light shielding layer disposed on the base substrate and spaced apart from the second sub auxiliary electrode, and disposed on the base substrate and covering the metal light shielding layer and the second sub auxiliary electrode a buffer layer; the active layer is disposed on the buffer layer and correspondingly located above the metal light shielding layer, the interlayer insulating layer is disposed on the buffer layer and covers the active layer and the gate;
所述缓冲层及层间绝缘层上设有暴露所述第二子辅助电极的第五过孔，所述第一子辅助电极经所述第五过孔与所述第二子辅助电极连接；The buffer layer and the interlayer insulating layer are provided with a fifth via hole exposing the second sub auxiliary electrode, and the first sub auxiliary electrode is connected to the second sub auxiliary electrode via the fifth via hole;
其中，所述TFT基板还包括：覆盖所述层间绝缘层、源极、漏极、及第一子辅助电极的钝化层；所述平坦层形成于所述钝化层上；所述钝化层上设有分别暴露出所述源极及第一子辅助电极的第六过孔及第七过孔；所述第一过孔及第二过孔分别位于所述第六过孔及第七过孔上方；The TFT substrate further includes: a passivation layer covering the interlayer insulating layer, the source, the drain, and the first sub-auxiliary electrode; the flat layer is formed on the passivation layer; a sixth via hole and a seventh via hole respectively exposing the source and the first sub auxiliary electrode; wherein the first via hole and the second via hole are respectively located in the sixth via hole and the first via hole Above the seven vias;
其中，所述金属凸起为块状或长条状，所述金属凸起纵剖面的形状为三角形或矩形。Wherein, the metal protrusion is in the form of a block or an elongated strip, and the shape of the longitudinal section of the metal protrusion is a triangle or a rectangle.
本发明的有益效果：本发明提供的OLED面板的制作方法，在具有辅助电极的TFT基板上制作与TFT的源极连接的阳极、及与辅助电极连接的搭接电极，并在搭接电极上制作多个表面具有尖角的金属凸起，使得在后续制程中依次形成整面的电子传输层、电子注入层、及阴极后，电子传输层、电子注入层与金属凸起的尖角对应的位置具有较薄的膜厚，进而通过向辅助电极或搭接电极施加电压后，金属凸起的尖角处因阻抗大而将电子传输层、电子注入层与金属凸起的尖角对应的位置烧掉，从而使阴极和辅助电极连接，使OLED面板在显示时能够通过辅助电极向阴极输入信号，有效地改善了由阴极的IR压降导致的OLED面板显示不均的问题。本发明提供的OLED面板，具有与阴极连接的辅助电极，能够改善由阴极的IR压降导致的OLED面板显示不均的问题。 Advantageous Effects of Invention The present invention provides a method for fabricating an OLED panel, in which an anode connected to a source of a TFT and a lap electrode connected to an auxiliary electrode are formed on a TFT substrate having an auxiliary electrode, and on the lap electrode Producing a plurality of metal protrusions having sharp corners on the surface, so that after the entire surface of the electron transport layer, the electron injection layer, and the cathode are sequentially formed in the subsequent process, the electron transport layer and the electron injection layer correspond to the sharp corners of the metal bumps. The position has a thin film thickness, and after applying a voltage to the auxiliary electrode or the lap electrode, the position of the electron transport layer and the electron injection layer corresponding to the sharp corner of the metal bump is caused by the impedance at the sharp corner of the metal bump. Burning off, so that the cathode and the auxiliary electrode are connected, so that the OLED panel can input a signal to the cathode through the auxiliary electrode during display, effectively improving the problem of uneven display of the OLED panel caused by the IR drop of the cathode. The OLED panel provided by the invention has an auxiliary electrode connected to the cathode, which can improve the problem of uneven display of the OLED panel caused by the IR drop of the cathode.
附图说明DRAWINGS
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。The detailed description of the present invention and the accompanying drawings are to be understood,
附图中，In the drawings,
图1为本发明的OLED面板的制作方法的流程图；1 is a flow chart of a method of fabricating an OLED panel of the present invention;
图2为本发明的OLED面板的制作方法的步骤S1的示意图；2 is a schematic diagram of step S1 of the method for fabricating an OLED panel of the present invention;
图3为本发明的OLED面板的制作方法的步骤S2的示意图；3 is a schematic diagram of step S2 of the method for fabricating an OLED panel of the present invention;
图4为本发明的OLED面板的制作方法的步骤S3的示意图；4 is a schematic diagram of step S3 of the method for fabricating an OLED panel of the present invention;
图5为本发明的OLED面板的制作方法的步骤S4的示意图；FIG. 5 is a schematic diagram of step S4 of the method for fabricating an OLED panel of the present invention; FIG.
图6为本发明的OLED面板的制作方法的步骤S5的示意图；6 is a schematic diagram of step S5 of the method for fabricating an OLED panel of the present invention;
图7为本发明的OLED面板的制作方法的步骤S6的示意图；7 is a schematic diagram of step S6 of the method for fabricating an OLED panel of the present invention;
图8为本发明的OLED面板的制作方法在步骤S6后在金属凸起所在位置的放大示意图；8 is an enlarged schematic view showing a position of a metal bump after the step S6 in the method for fabricating the OLED panel of the present invention;
图9为本发明的OLED面板的制作方法的步骤S7的示意图暨本发明的OLED面板的结构示意图；9 is a schematic view showing a step S7 of the method for fabricating an OLED panel of the present invention and a schematic structural view of the OLED panel of the present invention;
图10为本发明的OLED面板的制作方法在步骤S7后在金属凸起所在位置的放大示意图。FIG. 10 is an enlarged schematic view showing the position of the metal bump after the step S7 of the method for fabricating the OLED panel of the present invention.
具体实施方式Detailed ways
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。In order to further clarify the technical means and effects of the present invention, the following detailed description will be made in conjunction with the preferred embodiments of the invention and the accompanying drawings.
请参阅图1，本发明提供一种OLED面板的制作方法，包括如下步骤：Referring to FIG. 1 , the present invention provides a method for fabricating an OLED panel, including the following steps:
步骤S1、请参阅图2，提供TFT基板100；Step S1, please refer to FIG. 2, providing a TFT substrate 100;
所述TFT基板100包括：衬底基板110、及设于所述衬底基板110上且间隔的TFT 120及辅助电极130；所述TFT 120具有源极121。The TFT substrate 100 includes a base substrate 110 and a TFT 120 and an auxiliary electrode 130 disposed on the base substrate 110. The TFT 120 has a source 121.
具体地，在图2所示的实施例中，所述TFT 120为顶栅型(Top gate)的薄膜晶体管，包括：设于所述衬底基板110上方的有源层122、于所述有源层122上依次设置的栅极绝缘层123及栅极124、覆盖所述有源层122及栅极124的层间绝缘层125、及设于所述层间绝缘层125上且间隔的源极121及漏极126。当然，所述TFT 120也可为底栅型(Bottom gate)的薄膜晶体管，这并不会影响本发明的实现。Specifically, in the embodiment shown in FIG. 2, the TFT 120 is a top gate thin film transistor, and includes: an active layer 122 disposed on the base substrate 110, a gate insulating layer 123 and a gate electrode 124 sequentially disposed on the source layer 122, an interlayer insulating layer 125 covering the active layer 122 and the gate electrode 124, and a source disposed on the interlayer insulating layer 125 and spaced apart The pole 121 and the drain 126. Of course, the TFT 120 can also be a Bottom gate thin film transistor, which does not affect the implementation of the present invention.
具体地，所述TFT 120可为低温多晶硅(LTPS)薄膜晶体管、氧化物 半导体(Oxide)薄膜晶体管、固相晶化(SPC)薄膜晶体管、或其他常用于OLED显示技术中的薄膜晶体管。Specifically, the TFT 120 may be a low temperature polysilicon (LTPS) thin film transistor, an oxide. An (Oxide) thin film transistor, a solid phase crystallization (SPC) thin film transistor, or other thin film transistor commonly used in OLED display technology.
具体地，请参阅图2，所述辅助电极130包括设于所述层间绝缘层125上且与所述源极121、及漏极126均间隔的第一子辅助电极131；Specifically, referring to FIG. 2, the auxiliary electrode 130 includes a first sub-auxiliary electrode 131 disposed on the interlayer insulating layer 125 and spaced apart from the source 121 and the drain 126;
所述层间绝缘层125上设有分别位于所述有源层122两侧上方的第三过孔1251及第四过孔1252，所述源极121及漏极126分别通过所述第三过孔1251及第四过孔1252与所述有源层122的两侧连接。The interlayer insulating layer 125 is provided with a third via 1251 and a fourth via 1252 respectively located above the two sides of the active layer 122. The source 121 and the drain 126 pass through the third pass respectively. The hole 1251 and the fourth via 1252 are connected to both sides of the active layer 122.
具体地，所述辅助电极130还包括设于所述衬底基板110上的第二子辅助电极132。Specifically, the auxiliary electrode 130 further includes a second sub-auxiliary electrode 132 disposed on the base substrate 110.
具体地，针对图2所示的实施例中的TFT 120为顶栅型薄膜晶体管，所述TFT基板100还包括：设于所述衬底基板110上且与所述第二子辅助电极132间隔的金属遮光层140、及设于所述衬底基板110上且覆盖所述金属遮光层140及第二子辅助电极132的缓冲层150；所述有源层122设于所述缓冲层150上且对应位于金属遮光层140上方，所述层间绝缘层125设于所述缓冲层150上且覆盖所述有源层122及栅极124；所述缓冲层150及层间绝缘层125上设有暴露所述第二子辅助电极132的第五过孔151，所述第一子辅助电极131经所述第五过孔151与所述第二子辅助电极132连接。Specifically, the TFT 120 in the embodiment shown in FIG. 2 is a top gate type thin film transistor, and the TFT substrate 100 further includes: disposed on the base substrate 110 and spaced apart from the second sub auxiliary electrode 132 a metal light shielding layer 140, and a buffer layer 150 disposed on the base substrate 110 and covering the metal light shielding layer 140 and the second sub auxiliary electrode 132; the active layer 122 is disposed on the buffer layer 150 The interlayer insulating layer 125 is disposed on the buffer layer 150 and covers the active layer 122 and the gate electrode 124. The buffer layer 150 and the interlayer insulating layer 125 are disposed on the buffer layer 150. There is a fifth via 151 exposing the second sub auxiliary electrode 132, and the first sub auxiliary electrode 131 is connected to the second sub auxiliary electrode 132 via the fifth via 151.
进一步地，该第二辅助电极132可与金属遮光层140通过同一道光罩形成。Further, the second auxiliary electrode 132 can be formed by the same mask as the metal light shielding layer 140.
具体地，请参阅图2，所述TFT基板100还包括：覆盖所述层间绝缘层125、源极121、漏极126、及第一子辅助电极131的钝化层160；所述钝化层160上设有分别暴露出所述源极121及第一子辅助电极131的第六过孔161及第七过孔162。Specifically, referring to FIG. 2, the TFT substrate 100 further includes: a passivation layer 160 covering the interlayer insulating layer 125, the source 121, the drain 126, and the first sub-auxiliary electrode 131; The layer 160 is provided with a sixth via 161 and a seventh via 162 that expose the source 121 and the first sub-auxiliary electrode 131, respectively.
步骤S2、请参阅图3，在所述TFT基板100上形成平坦层200，对所述平坦层200进行图案化，形成分别暴露所述源极121及辅助电极130的第一过孔210及第二过孔220。Step S2, referring to FIG. 3, a flat layer 200 is formed on the TFT substrate 100, and the flat layer 200 is patterned to form first vias 210 and the first vias exposing the source 121 and the auxiliary electrode 130, respectively. Two vias 220.
具体地，请参阅图3，所述平坦层200形成于钝化层160上，所述第一过孔210及第二过孔220分别位于所述第六过孔161及第七过孔162上方，所述第二过孔220暴露出所述第一子辅助电极131。Specifically, referring to FIG. 3 , the flat layer 200 is formed on the passivation layer 160 , and the first via hole 210 and the second via hole 220 are respectively located above the sixth via hole 161 and the seventh via hole 162 . The second via 220 exposes the first sub-auxiliary electrode 131.
步骤S3、请参阅图4，在所述平坦层200上形成间隔的阳极310、及搭接电极320；Step S3, please refer to FIG. 4, forming a spacer anode 310 and a lap electrode 320 on the flat layer 200;
所述阳极310经第一过孔210与源极131连接，所述搭接电极320经第二过孔220与所述辅助电极130连接。The anode 310 is connected to the source 131 via the first via 210, and the lap electrode 320 is connected to the auxiliary electrode 130 via the second via 220.
具体地，所述阳极310与搭接电极320可选择相同材料或不同材料， 厚度可相同也可不同。Specifically, the anode 310 and the lap electrode 320 may be selected from the same material or different materials. The thickness can be the same or different.
进一步地，当所述阳极310与搭接电极320采用相同的材料，且厚度相同时，可通过在所述平坦层200上形成一阳极材料层，对所述阳极材料层进行图案化而得到阳极310及搭接电极320。Further, when the anode 310 and the lap electrode 320 are made of the same material and have the same thickness, the anode material layer can be patterned by forming an anode material layer on the flat layer 200 to obtain an anode. 310 and lap electrode 320.
步骤S4、请参阅图5，在所述搭接电极320上形成多个表面具有尖角的金属凸起400。Step S4, referring to FIG. 5, a plurality of metal protrusions 400 having sharp corners on the surface are formed on the lap electrode 320.
具体地，所述金属凸起400可为块状、长条状或其他形状。Specifically, the metal protrusions 400 may be in the form of a block, an elongated strip, or other shapes.
具体地，在图5所示的实施例中，所述金属凸起400纵剖面的形状为矩形，也即金属凸起400的上表面与侧面的交界处存在尖角，当然，所述金属凸起400的纵剖面也可选择三角形或其他表面具有尖角的形状。Specifically, in the embodiment shown in FIG. 5, the shape of the longitudinal section of the metal protrusion 400 is a rectangle, that is, a sharp corner exists at the boundary between the upper surface and the side surface of the metal protrusion 400. Of course, the metal protrusion The longitudinal profile of the 400 can also be selected from triangles or other surfaces having sharp corners.
步骤S5、请参阅图6，在所述平坦层200、阳极310、及搭接电极320上形成像素界定层500，所述像素界定层500上设有暴露所述阳极310的第一开口510，且所述像素界定层500暴露所述搭接电极320上设有金属凸起400的区域。Step S5, referring to FIG. 6, a pixel defining layer 500 is formed on the flat layer 200, the anode 310, and the lap electrode 320. The pixel defining layer 500 is provided with a first opening 510 exposing the anode 310. And the pixel defining layer 500 exposes a region of the lap electrode 320 on which the metal bump 400 is disposed.
具体地，所述第一开口510限定出OLED面板的像素区域。Specifically, the first opening 510 defines a pixel area of the OLED panel.
具体地，所述像素界定层500的亲疏水性根据后续在第一开口510中制作OLED功能层(空穴注入层、空穴传输层、发光层、电子传输层、电子注入层)的方式做决定，当后续在第一开口510中采用蒸镀方式制作OLED功能层，则像素界定层500选择常规的非疏水性材料，当后续在第一开口510中采用喷墨打印的方式制作OLED功能层，则像素界定层500选择常规的疏水性材料。Specifically, the hydrophilicity and hydrophobicity of the pixel defining layer 500 is determined according to the manner in which the OLED functional layer (hole injection layer, hole transport layer, light emitting layer, electron transport layer, and electron injection layer) is subsequently formed in the first opening 510. When the OLED functional layer is subsequently formed by evaporation in the first opening 510, the pixel defining layer 500 selects a conventional non-hydrophobic material, and then the OLED functional layer is formed by inkjet printing in the first opening 510. The pixel defining layer 500 then selects a conventional hydrophobic material.
步骤S6、请参阅图7及图8，于所述第一开口510内的阳极310上依次形成空穴注入层610、空穴传输层620、及发光层630；在所述发光层630、像素界定层500、搭接电极320、及金属凸起400上依次形成电子传输层640、电子注入层650、及阴极700。Step S6, referring to FIG. 7 and FIG. 8, a hole injection layer 610, a hole transport layer 620, and a light-emitting layer 630 are sequentially formed on the anode 310 in the first opening 510; and the light-emitting layer 630 and the pixel are formed on the anode 310. An electron transport layer 640, an electron injection layer 650, and a cathode 700 are sequentially formed on the defining layer 500, the lap electrode 320, and the metal bump 400.
具体地，请参阅图8，由于搭接电极320上设有表面具有尖角的金属凸起400，因此在金属凸起400上形成电子传输层640及电子注入层650后，该电子传输层640及电子注入层650在对应金属凸起400的尖角的区域的膜厚较薄。Specifically, referring to FIG. 8 , since the lap electrode 320 is provided with a metal bump 400 having a sharp corner on the surface, the electron transport layer 640 and the electron injection layer 650 are formed on the metal bump 400, and the electron transport layer 640 is formed. And the electron injection layer 650 has a thin film thickness in a region corresponding to the sharp corner of the metal bump 400.
步骤S7、请参阅图9及图10，向所述辅助电极130或搭接电极320上施加电压，使所述电子传输层640及电子注入层650上与所述金属凸起400的尖角对应的部分被烧掉而形成多个第二开口641，所述阴极700通过第二开口641与所述金属凸起400连接。Step S7, referring to FIG. 9 and FIG. 10, applying a voltage to the auxiliary electrode 130 or the lap electrode 320, so that the electron transport layer 640 and the electron injection layer 650 correspond to the sharp corners of the metal bump 400. The portion is burned to form a plurality of second openings 641, and the cathode 700 is connected to the metal bumps 400 through the second openings 641.
具体地，请参阅图10，由于电子传输层640及电子注入层650在对应 金属凸起400的尖角的区域的膜厚较薄，同时向辅助电极130或搭接电极320通电后金属凸起400在其尖角处的阻抗较大，因此会释放大量的热量，而电子传输层640及电子注入层650均采用有机材料制作，因此金属凸起400尖角处产生的热量会将电子传输层640及电子注入层650对应的部分烧掉，而使子传输层640及电子注入层650上与金属凸起400的尖角对应的部分形成多个第二开口641，从而使阴极700和金属凸起400连接，进而使阴极700与搭接电极320及辅助电极130导通，使得到的OLED面板在显示时能够通过辅助电极130向阴极700输入信号，实现改善由阴极700的IR压降导致的OLED面板显示不均的效果。Specifically, please refer to FIG. 10, since the electron transport layer 640 and the electron injection layer 650 correspond to each other. The sharp corner region of the metal bump 400 has a thin film thickness, and at the same time, the metal bump 400 has a large impedance at its sharp corner after being energized to the auxiliary electrode 130 or the lap electrode 320, thereby releasing a large amount of heat, and electrons. The transmission layer 640 and the electron injection layer 650 are both made of an organic material. Therefore, the heat generated at the corners of the metal bump 400 burns the corresponding portions of the electron transport layer 640 and the electron injection layer 650, and the sub-transport layer 640 and the electrons are burned. A portion of the injection layer 650 corresponding to the sharp corner of the metal bump 400 forms a plurality of second openings 641, thereby connecting the cathode 700 and the metal bump 400, thereby turning on the cathode 700 and the lap electrode 320 and the auxiliary electrode 130. The obtained OLED panel can input a signal to the cathode 700 through the auxiliary electrode 130 at the time of display, thereby achieving an effect of improving display unevenness of the OLED panel caused by the IR drop of the cathode 700.
请参阅图9及图10，基于同一发明构思，本发明还提供一种采用上述的OLED面板的制作方法制作的OLED面板，包括：Referring to FIG. 9 and FIG. 10, based on the same inventive concept, the present invention further provides an OLED panel fabricated by using the above method for fabricating an OLED panel, comprising:
TFT基板100；所述TFT基板100包括：衬底基板110、及设于所述衬底基板110上且间隔的TFT 120及辅助电极130；所述TFT 120具有源极121；The TFT substrate 100 includes: a substrate substrate 110, and a TFT 120 and an auxiliary electrode 130 disposed on the substrate substrate 110; the TFT 120 has a source 121;
设于所述TFT基板100上的平坦层200，所述平坦层200上设有分别暴露所述源极121及辅助电极130的第一过孔210、及第二过孔220；a flat layer 200 disposed on the TFT substrate 100, the flat layer 200 is provided with a first via 210 and a second via 220 respectively exposing the source 121 and the auxiliary electrode 130;
设于所述平坦层200上的阳极310；所述阳极310经第一过孔210与源极121连接；An anode 310 disposed on the flat layer 200; the anode 310 is connected to the source 121 via the first via 210;
设于所述平坦层200上且与所述阳极310间隔的搭接电极320；所述搭接电极320经第二过孔220与辅助电极130连接；a lap electrode 320 disposed on the flat layer 200 and spaced apart from the anode 310; the lap electrode 320 is connected to the auxiliary electrode 130 via the second via 220;
设于所述搭接电极320上的多个表面具有尖角的金属凸起400；a plurality of surfaces provided on the lap electrode 320 having sharp corners of the metal bumps 400;
设于所述平坦层200、阳极310、及搭接电极320上的像素界定层500；所述像素界定层500上设有暴露所述阳极310的第一开口510，且所述像素界定层500暴露所述搭接电极320上设有金属凸起400的区域；a pixel disposed on the planarization layer 200, the anode 310, and the lap electrode 320 defines a layer 500; the pixel defining layer 500 is provided with a first opening 510 exposing the anode 310, and the pixel defining layer 500 Exposing a region of the lap electrode 320 on which the metal bump 400 is disposed;
于所述第一开口510内的阳极310上依次设置的空穴注入层610、空穴传输层620及发光层630；a hole injection layer 610, a hole transport layer 620 and a light-emitting layer 630 disposed on the anode 310 in the first opening 510;
于所述发光层630、像素界定层500、搭接电极320、及金属凸起400上依次设置的电子传输层640、电子注入层650；所述电子传输层640及电子注入层650对应多个金属凸起400的尖角设有多个第二开口641；The electron transport layer 640 and the electron injection layer 650 are sequentially disposed on the light emitting layer 630, the pixel defining layer 500, the lap electrode 320, and the metal bump 400. The electron transport layer 640 and the electron injection layer 650 correspond to a plurality of a plurality of second openings 641 are provided at the sharp corners of the metal protrusions 400;
以及设于所述电子注入层650上的阴极700；所述阴极700通过所述第二开口641与金属凸起400连接。And a cathode 700 disposed on the electron injection layer 650; the cathode 700 is connected to the metal protrusion 400 through the second opening 641.
具体地，在图9所示的实施例中，所述TFT 120为顶栅型(Top gate)的薄膜晶体管，包括：设于所述衬底基板110上方的有源层122、于所述有源层122上依次设置的栅极绝缘层123及栅极124、覆盖所述有源层122及 栅极124的层间绝缘层125、及设于所述层间绝缘层125上且间隔的源极121及漏极126。当然，所述TFT 120也可为底栅型(Bottom gate)的薄膜晶体管，这并不会影响本发明的实现。Specifically, in the embodiment shown in FIG. 9, the TFT 120 is a top gate thin film transistor, and includes an active layer 122 disposed on the base substrate 110. a gate insulating layer 123 and a gate electrode 124 disposed on the source layer 122 in sequence, covering the active layer 122 and An interlayer insulating layer 125 of the gate electrode 124 and a source electrode 121 and a drain electrode 126 which are provided on the interlayer insulating layer 125 and spaced apart from each other. Of course, the TFT 120 can also be a Bottom gate thin film transistor, which does not affect the implementation of the present invention.
具体地，所述TFT 120可为低温多晶硅(LTPS)薄膜晶体管、氧化物半导体(Oxide)薄膜晶体管、固相晶化(SPC)薄膜晶体管、或其他常用于OLED显示技术中的薄膜晶体管。Specifically, the TFT 120 may be a low temperature polysilicon (LTPS) thin film transistor, an oxide semiconductor (Oxide) thin film transistor, a solid phase crystallization (SPC) thin film transistor, or other thin film transistor commonly used in OLED display technology.
具体地，请参阅图9，所述辅助电极130包括设于所述层间绝缘层125上且与所述源极121、及漏极126均间隔的第一子辅助电极131；Specifically, please refer to FIG. 9 , the auxiliary electrode 130 includes a first sub auxiliary electrode 131 disposed on the interlayer insulating layer 125 and spaced apart from the source 121 and the drain 126 ;
所述层间绝缘层125上设有分别位于所述有源层122两侧上方的第三过孔1251及第四过孔1252，所述源极121及漏极126分别通过所述第三过孔1251及第四过孔1252与所述有源层122的两侧连接。The interlayer insulating layer 125 is provided with a third via 1251 and a fourth via 1252 respectively located above the two sides of the active layer 122. The source 121 and the drain 126 pass through the third pass respectively. The hole 1251 and the fourth via 1252 are connected to both sides of the active layer 122.
具体地，所述辅助电极130还包括设于所述衬底基板110上的第二子辅助电极132。Specifically, the auxiliary electrode 130 further includes a second sub-auxiliary electrode 132 disposed on the base substrate 110.
具体地，针对图9所示的实施例中的TFT 120为顶栅型薄膜晶体管，所述TFT基板100还包括：设于所述衬底基板110上且与所述第二子辅助电极132间隔的金属遮光层140、及设于所述衬底基板110上且覆盖所述金属遮光层140及第二子辅助电极132的缓冲层150；所述有源层122设于所述缓冲层150上且对应位于金属遮光层140上方，所述层间绝缘层125设于所述缓冲层150上且覆盖所述有源层122及栅极124；所述缓冲层150及层间绝缘层125上设有暴露所述第二子辅助电极132的第五过孔151，所述第一子辅助电极131经所述第五过孔151与所述第二子辅助电极132连接。Specifically, the TFT 120 in the embodiment shown in FIG. 9 is a top gate type thin film transistor, and the TFT substrate 100 further includes: disposed on the base substrate 110 and spaced apart from the second sub auxiliary electrode 132 a metal light shielding layer 140, and a buffer layer 150 disposed on the base substrate 110 and covering the metal light shielding layer 140 and the second sub auxiliary electrode 132; the active layer 122 is disposed on the buffer layer 150 The interlayer insulating layer 125 is disposed on the buffer layer 150 and covers the active layer 122 and the gate electrode 124. The buffer layer 150 and the interlayer insulating layer 125 are disposed on the buffer layer 150. There is a fifth via 151 exposing the second sub auxiliary electrode 132, and the first sub auxiliary electrode 131 is connected to the second sub auxiliary electrode 132 via the fifth via 151.
具体地，请参阅图9，所述TFT基板100还包括：覆盖所述层间绝缘层125、源极121、漏极126、及第一子辅助电极131的钝化层160；所述钝化层160上设有分别暴露出所述源极121及第一子辅助电极131的第六过孔161及第七过孔162。Specifically, referring to FIG. 9, the TFT substrate 100 further includes: a passivation layer 160 covering the interlayer insulating layer 125, the source 121, the drain 126, and the first sub auxiliary electrode 131; The layer 160 is provided with a sixth via 161 and a seventh via 162 that expose the source 121 and the first sub-auxiliary electrode 131, respectively.
具体地，请参阅图9，所述平坦层200形成于所述钝化层160上，所述第一过孔210及第二过孔220分别位于所述第六过孔161及第七过孔162上方，所述第二过孔220暴露出所述第一子辅助电极131。Specifically, referring to FIG. 9 , the flat layer 200 is formed on the passivation layer 160 , and the first via hole 210 and the second via hole 220 are respectively located in the sixth via hole 161 and the seventh via hole. Above the 162, the second via 220 exposes the first sub-auxiliary electrode 131.
具体地，所述阳极310与搭接电极320可选择相同材料或不同材料，厚度可相同也可不同。Specifically, the anode 310 and the lap electrode 320 may be selected from the same material or different materials, and the thickness may be the same or different.
具体地，所述金属凸起400可为块状、长条状或其他形状。Specifically, the metal protrusions 400 may be in the form of a block, an elongated strip, or other shapes.
具体地，在图9所示的实施例中，所述金属凸起400纵剖面的形状为矩形，也即金属凸起400的上表面与侧面的交界处存在尖角，当然，所述金属凸起400的纵剖面也可选择三角形或其他表面具有尖角的形状。 Specifically, in the embodiment shown in FIG. 9, the shape of the longitudinal section of the metal protrusion 400 is a rectangle, that is, a sharp corner exists at the boundary between the upper surface and the side surface of the metal protrusion 400. Of course, the metal protrusion The longitudinal profile of the 400 can also be selected from triangles or other surfaces having sharp corners.
具体地，所述第一开口510限定出OLED面板的像素区域。Specifically, the first opening 510 defines a pixel area of the OLED panel.
具体地，所述像素界定层500的亲疏水性根据空穴注入层610、空穴传输层620、发光层630、电子传输层640、电子注入层650的制作方式决定，当空穴注入层610、空穴传输层620、发光层630、电子传输层640、电子注入层650均采用蒸镀方式制作，则像素界定层500选择常规的非疏水性材料，当空穴注入层610、空穴传输层620、发光层630、电子传输层640、电子注入层650均采用打印的方式制作，则像素界定层500选择常规的疏水性材料。Specifically, the hydrophilicity and hydrophobicity of the pixel defining layer 500 is determined according to the manner in which the hole injection layer 610, the hole transport layer 620, the light emitting layer 630, the electron transport layer 640, and the electron injection layer 650 are fabricated, when the hole injection layer 610 is empty. The hole transport layer 620, the light-emitting layer 630, the electron transport layer 640, and the electron injection layer 650 are all formed by evaporation. The pixel defining layer 500 selects a conventional non-hydrophobic material, and the hole injection layer 610 and the hole transport layer 620. The light-emitting layer 630, the electron transport layer 640, and the electron injection layer 650 are all formed by printing, and the pixel defining layer 500 selects a conventional hydrophobic material.
需要说明的是，请参阅图9及图10，本发明中，所述电子传输层640及电子注入层650上与所述金属凸起400的尖角对应的部分形成多个第二开口641，从而使阴极700和金属凸起400连接，进而使阴极700与搭接电极320及辅助电极130导通，使得到的OLED面板在显示时能够通过辅助电极130向阴极700输入信号，实现改善由阴极700的IR压降导致的OLED面板显示不均的效果。It is to be noted that, in the present invention, a portion of the electron transport layer 640 and the electron injection layer 650 corresponding to the sharp corner of the metal bump 400 forms a plurality of second openings 641. Thereby, the cathode 700 and the metal bump 400 are connected, thereby turning on the cathode 700 and the lap electrode 320 and the auxiliary electrode 130, so that the OLED panel can display a signal to the cathode 700 through the auxiliary electrode 130 during display, thereby improving the cathode. The IR drop of 700 results in an uneven display of the OLED panel.
综上所述，本发明的OLED面板的制作方法，在具有辅助电极的TFT基板上制作与TFT的源极连接的阳极、及与辅助电极连接的搭接电极，并在搭接电极上制作多个表面具有尖角的金属凸起，使得在后续制程中依次形成整面的电子传输层、电子注入层、及阴极后，电子传输层、电子注入层与金属凸起的尖角对应的位置具有较薄的膜厚，进而通过向辅助电极或搭接电极施加电压后，金属凸起的尖角处因阻抗大而将电子传输层、电子注入层与金属凸起的尖角对应的位置烧掉，从而使阴极和辅助电极连接，使OLED面板在显示时能够通过辅助电极向阴极输入信号，有效地改善了由阴极的IR压降导致的OLED面板显示不均的问题。本发明的OLED面板，具有与阴极连接的辅助电极，能够改善由阴极的IR压降导致的OLED面板显示不均的问题。In summary, in the method for fabricating the OLED panel of the present invention, an anode connected to the source of the TFT and a lap electrode connected to the auxiliary electrode are formed on the TFT substrate having the auxiliary electrode, and the lap electrode is formed on the lap electrode. The surface has a sharp metal protrusion, so that after the entire surface of the electron transport layer, the electron injection layer, and the cathode are sequentially formed in the subsequent process, the electron transport layer and the electron injection layer have positions corresponding to the sharp corners of the metal bumps. a thin film thickness, and further, by applying a voltage to the auxiliary electrode or the lap electrode, the electron transfer layer, the electron injection layer, and the sharp corner of the metal bump are burned off due to the large impedance at the sharp corner of the metal bump. Therefore, the cathode and the auxiliary electrode are connected, so that the OLED panel can input a signal to the cathode through the auxiliary electrode during display, which effectively improves the problem of uneven display of the OLED panel caused by the IR drop of the cathode. The OLED panel of the present invention has an auxiliary electrode connected to the cathode, which can improve the problem of uneven display of the OLED panel caused by the IR drop of the cathode.
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。 In the above, various other changes and modifications can be made in accordance with the technical solutions and technical concept of the present invention, and all such changes and modifications are within the scope of the claims of the present invention. .

Claims (11)

  1. 一种OLED面板的制作方法，包括如下步骤：A method for manufacturing an OLED panel includes the following steps:
    步骤S1、提供TFT基板；Step S1, providing a TFT substrate;
    所述TFT基板包括：衬底基板、及设于所述衬底基板上且间隔的TFT及辅助电极；所述TFT具有源极；The TFT substrate includes: a base substrate; and a TFT and an auxiliary electrode disposed on the base substrate and spaced apart; the TFT has a source;
    步骤S2、在所述TFT基板上形成平坦层，对所述平坦层进行图案化，形成分别暴露所述源极、及辅助电极的第一过孔、及第二过孔；Step S2, forming a flat layer on the TFT substrate, patterning the flat layer to form a first via hole and a second via hole respectively exposing the source and the auxiliary electrode;
    步骤S3、在所述平坦层上形成间隔的阳极、及搭接电极；Step S3, forming a spaced anode and a lap electrode on the flat layer;
    所述阳极经第一过孔与源极连接，所述搭接电极经第二过孔与所述辅助电极连接；The anode is connected to the source via the first via, and the lap electrode is connected to the auxiliary electrode via the second via;
    步骤S4、在所述搭接电极上形成多个表面具有尖角的金属凸起；Step S4, forming a plurality of metal protrusions having sharp corners on the lap electrode;
    步骤S5、在所述平坦层、阳极、及搭接电极上形成像素界定层，所述像素界定层上设有暴露所述阳极的第一开口，且所述像素界定层暴露所述搭接电极上设有金属凸起的区域；Step S5, forming a pixel defining layer on the flat layer, the anode, and the lap electrode, the pixel defining layer is provided with a first opening exposing the anode, and the pixel defining layer exposing the lap electrode An area with metal protrusions thereon;
    步骤S6、于所述第一开口内的阳极上依次形成空穴注入层、空穴传输层、及发光层；在所述发光层、像素界定层、搭接电极、及金属凸起上依次形成电子传输层、电子注入层、及阴极；Step S6, sequentially forming a hole injection layer, a hole transport layer, and a light-emitting layer on the anode in the first opening; forming sequentially on the light-emitting layer, the pixel defining layer, the lap electrode, and the metal bump An electron transport layer, an electron injection layer, and a cathode;
    步骤S7、向所述辅助电极或搭接电极上施加电压，使所述电子传输层及电子注入层上与所述金属凸起的尖角对应的部分被烧掉而形成多个第二开口，所述阴极通过第二开口与所述金属凸起连接。Step S7, applying a voltage to the auxiliary electrode or the lap electrode, so that a portion of the electron transport layer and the electron injection layer corresponding to the sharp corner of the metal bump is burned to form a plurality of second openings, The cathode is coupled to the metal bump through a second opening.
  2. 如权利要求1所述的OLED面板的制作方法，其中，所述TFT包括：设于所述衬底基板上方的有源层、于所述有源层上依次设置的栅极绝缘层及栅极、覆盖所述有源层及栅极的层间绝缘层、及设于层间绝缘层上间隔的源极及漏极；The method of fabricating an OLED panel according to claim 1, wherein the TFT comprises: an active layer disposed over the substrate, a gate insulating layer and a gate sequentially disposed on the active layer And an interlayer insulating layer covering the active layer and the gate, and a source and a drain disposed on the interlayer insulating layer;
    所述辅助电极包括设于所述层间绝缘层上且与所述源极、及漏极均间隔的第一子辅助电极；所述第二过孔暴露出所述第一子辅助电极；The auxiliary electrode includes a first sub-auxiliary electrode disposed on the interlayer insulating layer and spaced apart from the source and the drain; the second via exposing the first sub-auxiliary electrode;
    所述层间绝缘层上设有分别位于所述有源层两侧上方的第三过孔及第四过孔，所述源极及漏极分别通过所述第三过孔及第四过孔与所述有源层的两侧连接。The interlayer insulating layer is provided with a third via hole and a fourth via hole respectively located on opposite sides of the active layer, and the source and the drain pass through the third via hole and the fourth via hole respectively Connected to both sides of the active layer.
  3. 如权利要求2所述的OLED面板的制作方法，其中，所述辅助电极还包括设于所述衬底基板上的第二子辅助电极；The method of fabricating an OLED panel according to claim 2, wherein the auxiliary electrode further comprises a second sub-auxiliary electrode disposed on the substrate;
    所述TFT基板还包括：设于所述衬底基板上且与第二子辅助电极间隔 的金属遮光层、及设于所述衬底基板上且覆盖所述金属遮光层及第二子辅助电极的缓冲层；所述有源层设于所述缓冲层上且对应位于金属遮光层上方，所述层间绝缘层设于所述缓冲层上且覆盖所述有源层及栅极；The TFT substrate further includes: being disposed on the base substrate and spaced apart from the second sub auxiliary electrode a metal light shielding layer, and a buffer layer disposed on the substrate and covering the metal light shielding layer and the second sub auxiliary electrode; the active layer is disposed on the buffer layer and corresponding to the metal light shielding layer The interlayer insulating layer is disposed on the buffer layer and covers the active layer and the gate;
    所述缓冲层及层间绝缘层上设有暴露所述第二子辅助电极的第五过孔，所述第一子辅助电极经所述第五过孔与所述第二子辅助电极连接。The buffer layer and the interlayer insulating layer are provided with a fifth via hole exposing the second sub auxiliary electrode, and the first sub auxiliary electrode is connected to the second sub auxiliary electrode via the fifth via hole.
  4. 如权利要求2所述的OLED面板的制作方法，其中，所述TFT基板还包括：覆盖所述层间绝缘层、源极、漏极、及第一子辅助电极的钝化层；所述平坦层形成于所述钝化层上；所述钝化层上设有分别暴露出所述源极及第一子辅助电极的第六过孔及第七过孔；所述第一过孔及第二过孔分别位于所述第六过孔及第七过孔上方。The method of fabricating an OLED panel according to claim 2, wherein the TFT substrate further comprises: a passivation layer covering the interlayer insulating layer, a source, a drain, and a first sub-auxiliary electrode; a layer is formed on the passivation layer; a sixth via hole and a seventh via hole respectively exposing the source and the first sub auxiliary electrode are respectively disposed on the passivation layer; the first via hole and the first via hole Two via holes are respectively located above the sixth via hole and the seventh via hole.
  5. 如权利要求1所述的OLED面板的制作方法，其中，所述金属凸起为块状或长条状，所述金属凸起纵剖面的形状为三角形或矩形。The method of fabricating an OLED panel according to claim 1, wherein the metal protrusions are in the form of a block or an elongated strip, and the shape of the longitudinal section of the metal protrusion is a triangle or a rectangle.
  6. 一种OLED面板，包括：An OLED panel comprising:
    TFT基板；所述TFT基板包括：衬底基板、及设于所述衬底基板上且间隔的TFT及辅助电极；所述TFT具有源极；a TFT substrate; the TFT substrate includes: a base substrate; and a TFT and an auxiliary electrode disposed on the base substrate and spaced apart; the TFT has a source;
    设于所述TFT基板上的平坦层，所述平坦层上设有分别暴露所述源极及辅助电极的第一过孔及第二过孔；a flat layer disposed on the TFT substrate, wherein the flat layer is provided with a first via hole and a second via hole respectively exposing the source and the auxiliary electrode;
    设于所述平坦层上的阳极；所述阳极经第一过孔与源极连接；An anode disposed on the flat layer; the anode is connected to the source via the first via;
    设于所述平坦层上且与所述阳极间隔的搭接电极；所述搭接电极经第二过孔与辅助电极连接；a lap electrode disposed on the flat layer and spaced apart from the anode; the lap electrode is connected to the auxiliary electrode via the second via hole;
    设于所述搭接电极上的多个表面具有尖角的金属凸起；a plurality of surfaces provided on the lap electrode having sharp corners of metal protrusions;
    设于所述平坦层、阳极、及搭接电极上的像素界定层；所述像素界定层上设有暴露所述阳极的第一开口，且所述像素界定层暴露所述搭接电极上设有金属凸起的区域；a pixel defining layer disposed on the flat layer, the anode, and the lap electrode; the pixel defining layer is provided with a first opening exposing the anode, and the pixel defining layer is exposed to the lap electrode a raised area;
    于所述第一开口内的阳极上依次设置的空穴注入层、空穴传输层、及发光层；a hole injection layer, a hole transport layer, and a light-emitting layer disposed in sequence on the anode in the first opening;
    于所述发光层、像素界定层、搭接电极、及金属凸起上依次设置的电子传输层、电子注入层；所述电子传输层及电子注入层对应多个金属凸起的尖角设有多个第二开口；An electron transport layer and an electron injection layer disposed on the light-emitting layer, the pixel defining layer, the lap electrode, and the metal bump; the electron transport layer and the electron injection layer are disposed at a sharp corner corresponding to the plurality of metal bumps a plurality of second openings;
    以及设于所述电子注入层上的阴极；所述阴极通过所述第二开口与金属凸起连接。And a cathode disposed on the electron injecting layer; the cathode being connected to the metal bump through the second opening.
  7. 如权利要求6所述的OLED面板，其中，所述TFT包括：设于所述衬底基板上方的有源层、于所述有源层上依次设置的栅极绝缘层及栅极、覆盖所述有源层及栅极的层间绝缘层、及设于所述层间绝缘层上且间隔的 源极及漏极；The OLED panel of claim 6, wherein the TFT comprises: an active layer disposed over the substrate, a gate insulating layer and a gate disposed sequentially on the active layer, and a cover An interlayer insulating layer of the active layer and the gate, and a spacer disposed on the interlayer insulating layer Source and drain;
    所述辅助电极包括设于所述层间绝缘层上且与所述源极、及漏极均间隔的第一子辅助电极；所述第二过孔暴露出所述第一子辅助电极；The auxiliary electrode includes a first sub-auxiliary electrode disposed on the interlayer insulating layer and spaced apart from the source and the drain; the second via exposing the first sub-auxiliary electrode;
    所述层间绝缘层上设有分别位于所述有源层两侧上方的第三过孔及第四过孔，所述源极及漏极分别通过所述第三过孔及第四过孔与所述有源层的两侧连接。The interlayer insulating layer is provided with a third via hole and a fourth via hole respectively located on opposite sides of the active layer, and the source and the drain pass through the third via hole and the fourth via hole respectively Connected to both sides of the active layer.
  8. 如权利要求7所述的OLED面板，其中，所述辅助电极还包括设于所述衬底基板上的第二子辅助电极；The OLED panel of claim 7, wherein the auxiliary electrode further comprises a second sub-auxiliary electrode disposed on the substrate;
    所述TFT基板还包括：设于所述衬底基板上且与所述第二子辅助电极间隔的金属遮光层、及设于所述衬底基板上覆盖所述金属遮光层及第二子辅助电极的缓冲层；所述有源层设于所述缓冲层上且对应位于金属遮光层上方，所述层间绝缘层设于所述缓冲层上且覆盖所述有源层及栅极；The TFT substrate further includes: a metal light shielding layer disposed on the base substrate and spaced apart from the second sub auxiliary electrode; and the base substrate is disposed on the base substrate to cover the metal light shielding layer and the second sub-assisted a buffer layer of the electrode; the active layer is disposed on the buffer layer and correspondingly located above the metal light shielding layer, the interlayer insulating layer is disposed on the buffer layer and covers the active layer and the gate;
    所述缓冲层及层间绝缘层上设有暴露所述第二子辅助电极的第五过孔，所述第一子辅助电极经所述第五过孔与所述第二子辅助电极连接。The buffer layer and the interlayer insulating layer are provided with a fifth via hole exposing the second sub auxiliary electrode, and the first sub auxiliary electrode is connected to the second sub auxiliary electrode via the fifth via hole.
  9. 如权利要求7所述的OLED面板，其中，所述TFT基板还包括：覆盖所述层间绝缘层、源极、漏极、第一子辅助电极的钝化层；所述平坦层设于所述钝化层上；所述钝化层上设有分别暴露出所述源极及第一子辅助电极的第六过孔及第七过孔；所述第一过孔及第二过孔分别位于所述第六过孔及第七过孔上方。The OLED panel of claim 7, wherein the TFT substrate further comprises: a passivation layer covering the interlayer insulating layer, a source, a drain, and a first sub-auxiliary electrode; The passivation layer is provided with a sixth via hole and a seventh via hole respectively exposing the source and the first sub auxiliary electrode; the first via hole and the second via hole respectively Located above the sixth via and the seventh via.
  10. 如权利要求6所述的OLED面板，其中，所述金属凸起为块状或长条状，所述金属凸起的纵剖面的形状为三角形或矩形。The OLED panel according to claim 6, wherein the metal bumps are in the form of a block or an elongated strip, and the longitudinal section of the metal bump has a triangular or rectangular shape.
  11. 一种OLED面板的制作方法，包括如下步骤：A method for manufacturing an OLED panel includes the following steps:
    步骤S1、提供TFT基板；Step S1, providing a TFT substrate;
    所述TFT基板包括：衬底基板、及设于所述衬底基板上且间隔的TFT及辅助电极；所述TFT具有源极；The TFT substrate includes: a base substrate; and a TFT and an auxiliary electrode disposed on the base substrate and spaced apart; the TFT has a source;
    步骤S2、在所述TFT基板上形成平坦层，对所述平坦层进行图案化，形成分别暴露所述源极、及辅助电极的第一过孔、及第二过孔；Step S2, forming a flat layer on the TFT substrate, patterning the flat layer to form a first via hole and a second via hole respectively exposing the source and the auxiliary electrode;
    步骤S3、在所述平坦层上形成间隔的阳极、及搭接电极；Step S3, forming a spaced anode and a lap electrode on the flat layer;
    所述阳极经第一过孔与源极连接，所述搭接电极经第二过孔与所述辅助电极连接；The anode is connected to the source via the first via, and the lap electrode is connected to the auxiliary electrode via the second via;
    步骤S4、在所述搭接电极上形成多个表面具有尖角的金属凸起；Step S4, forming a plurality of metal protrusions having sharp corners on the lap electrode;
    步骤S5、在所述平坦层、阳极、及搭接电极上形成像素界定层，所述像素界定层上设有暴露所述阳极的第一开口，且所述像素界定层暴露所述搭接电极上设有金属凸起的区域； Step S5, forming a pixel defining layer on the flat layer, the anode, and the lap electrode, the pixel defining layer is provided with a first opening exposing the anode, and the pixel defining layer exposing the lap electrode An area with metal protrusions thereon;
    步骤S6、于所述第一开口内的阳极上依次形成空穴注入层、空穴传输层、及发光层；在所述发光层、像素界定层、搭接电极、及金属凸起上依次形成电子传输层、电子注入层、及阴极；Step S6, sequentially forming a hole injection layer, a hole transport layer, and a light-emitting layer on the anode in the first opening; forming sequentially on the light-emitting layer, the pixel defining layer, the lap electrode, and the metal bump An electron transport layer, an electron injection layer, and a cathode;
    步骤S7、向所述辅助电极或搭接电极上施加电压，使所述电子传输层及电子注入层上与所述金属凸起的尖角对应的部分被烧掉而形成多个第二开口，所述阴极通过第二开口与所述金属凸起连接；Step S7, applying a voltage to the auxiliary electrode or the lap electrode, so that a portion of the electron transport layer and the electron injection layer corresponding to the sharp corner of the metal bump is burned to form a plurality of second openings, The cathode is connected to the metal protrusion through a second opening;
    其中，所述TFT包括：设于所述衬底基板上方的有源层、于所述有源层上依次设置的栅极绝缘层及栅极、覆盖所述有源层及栅极的层间绝缘层、及设于层间绝缘层上间隔的源极及漏极；The TFT includes: an active layer disposed above the substrate, a gate insulating layer and a gate sequentially disposed on the active layer, and an interlayer covering the active layer and the gate An insulating layer and a source and a drain disposed on the interlayer insulating layer;
    所述辅助电极包括设于所述层间绝缘层上且与所述源极、及漏极均间隔的第一子辅助电极；所述第二过孔暴露出所述第一子辅助电极；The auxiliary electrode includes a first sub-auxiliary electrode disposed on the interlayer insulating layer and spaced apart from the source and the drain; the second via exposing the first sub-auxiliary electrode;
    所述层间绝缘层上设有分别位于所述有源层两侧上方的第三过孔及第四过孔，所述源极及漏极分别通过所述第三过孔及第四过孔与所述有源层的两侧连接；The interlayer insulating layer is provided with a third via hole and a fourth via hole respectively located on opposite sides of the active layer, and the source and the drain pass through the third via hole and the fourth via hole respectively Connected to both sides of the active layer;
    其中，所述辅助电极还包括设于所述衬底基板上的第二子辅助电极；The auxiliary electrode further includes a second sub-auxiliary electrode disposed on the base substrate;
    所述TFT基板还包括：设于所述衬底基板上且与第二子辅助电极间隔的金属遮光层、及设于所述衬底基板上且覆盖所述金属遮光层及第二子辅助电极的缓冲层；所述有源层设于所述缓冲层上且对应位于金属遮光层上方，所述层间绝缘层设于所述缓冲层上且覆盖所述有源层及栅极；The TFT substrate further includes: a metal light shielding layer disposed on the base substrate and spaced apart from the second sub auxiliary electrode, and disposed on the base substrate and covering the metal light shielding layer and the second sub auxiliary electrode a buffer layer; the active layer is disposed on the buffer layer and correspondingly located above the metal light shielding layer, the interlayer insulating layer is disposed on the buffer layer and covers the active layer and the gate;
    所述缓冲层及层间绝缘层上设有暴露所述第二子辅助电极的第五过孔，所述第一子辅助电极经所述第五过孔与所述第二子辅助电极连接；The buffer layer and the interlayer insulating layer are provided with a fifth via hole exposing the second sub auxiliary electrode, and the first sub auxiliary electrode is connected to the second sub auxiliary electrode via the fifth via hole;
    其中，所述TFT基板还包括：覆盖所述层间绝缘层、源极、漏极、及第一子辅助电极的钝化层；所述平坦层形成于所述钝化层上；所述钝化层上设有分别暴露出所述源极及第一子辅助电极的第六过孔及第七过孔；所述第一过孔及第二过孔分别位于所述第六过孔及第七过孔上方；The TFT substrate further includes: a passivation layer covering the interlayer insulating layer, the source, the drain, and the first sub-auxiliary electrode; the flat layer is formed on the passivation layer; a sixth via hole and a seventh via hole respectively exposing the source and the first sub auxiliary electrode; wherein the first via hole and the second via hole are respectively located in the sixth via hole and the first via hole Above the seven vias;
    其中，所述金属凸起为块状或长条状，所述金属凸起纵剖面的形状为三角形或矩形。 Wherein, the metal protrusion is in the form of a block or an elongated strip, and the shape of the longitudinal section of the metal protrusion is a triangle or a rectangle.
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