CN110993812B - Organic light emitting diode panel and manufacturing method thereof - Google Patents

Organic light emitting diode panel and manufacturing method thereof Download PDF

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Publication number
CN110993812B
CN110993812B CN201911086216.3A CN201911086216A CN110993812B CN 110993812 B CN110993812 B CN 110993812B CN 201911086216 A CN201911086216 A CN 201911086216A CN 110993812 B CN110993812 B CN 110993812B
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layer
electron transport
transport layer
substrate
light emitting
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CN110993812A (en
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陈金祥
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to PCT/CN2019/120094 priority patent/WO2021088141A1/en
Priority to US16/625,772 priority patent/US11329246B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used

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  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses an organic light emitting diode panel and a manufacturing method thereof. The organic light emitting diode panel comprises a substrate; a pixel defining layer disposed on a portion of the substrate; an organic light emitting diode device and an auxiliary cathode contact device disposed on the substrate and spaced apart from the pixel defining layer, wherein the organic light emitting diode device includes an anode layer, a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer sequentially formed on one portion of the substrate, and the auxiliary cathode contact device includes an auxiliary cathode and a conductive contact sequentially formed on another portion of the substrate, the conductive contact including a conductive mixture of the electron transport layer and a solvent material for dissolving the electron transport layer; and a transparent electrode layer covering the electron transport layer, the pixel defining layer and the conductive contact.

Description

Organic light emitting diode panel and manufacturing method thereof
Technical Field
The present invention relates to the field of display technologies, and in particular, to an organic light emitting diode panel and a method for manufacturing the same.
Background
Organic Light Emitting Diodes (OLEDs) are a current-type semiconductor light emitting device, which uses organic materials to emit light by controlling the injection and recombination of carriers in the device, and belongs to an autonomous light emitting technology.
The display principle of an active-matrix organic light emitting diode (AMOLED) is to control the on-off state of a Thin Film Transistor (TFT) of each sub-pixel to control the current on the OLED to change the luminance of the OLED, so as to achieve display. Therefore, OLEDs are very sensitive to their driving currents, and weak current changes can affect their luminous intensity.
For a display of a large-sized AMOLED, a top-emission panel structure may be employed to substantially improve the resolution of the panel. Since in a top-emitting AMOLED structure the emitted light has to pass through the cathode of the OLED device, the cathode should have a sufficiently good transparency. The metal cathode material in a top-emitting OLED device should be as thin as possible, but the reduced thickness of the metal cathode can greatly increase the resistance of the metal cathode. When a large-sized panel works, the current flowing through the high-resistance metal cathode brings about a voltage Drop (IR Drop) between the center and the periphery of the panel, so that the currents on the OLED devices at different positions of the large-sized panel are different, and further the brightness difference between the center and the periphery is caused, so that the panel emits light unevenly, and the display quality is affected. Therefore, there is a need to provide an OLED panel to solve the above problems.
Disclosure of Invention
Accordingly, the present invention provides an Organic Light Emitting Diode (OLED) panel and a method for fabricating the same, so as to solve the problems of uneven light emission and display quality caused by the brightness difference between the center and the periphery of a large-sized OLED panel due to the IR Drop between the center and the periphery of the OLED panel in the prior art.
To achieve the aforementioned objective, an embodiment of the present invention provides an organic light emitting diode panel, which includes a substrate; a pixel defining layer disposed on a portion of the substrate; an organic light emitting diode device and an auxiliary cathode contact device disposed on the substrate and spaced apart from the pixel defining layer, wherein the organic light emitting diode device includes an anode layer, a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer sequentially formed on one portion of the substrate, and the auxiliary cathode contact device includes an auxiliary cathode and a conductive contact sequentially formed on another portion of the substrate, the conductive contact including a conductive mixture of the electron transport layer and a solvent material for dissolving the electron transport layer; and a transparent electrode layer covering the electron transport layer, the pixel defining layer and the conductive contact.
In an embodiment of the oled panel of the present invention, the transparent electrode layer is made of indium tin oxide or indium zinc oxide.
In an embodiment of the organic light emitting diode panel of the present invention, the material of the electron transport layer is 4, 7-diphenyl-1, 10-phenanthroline, (8-hydroxyquinoline) lithium, or 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene, and the solvent material for dissolving the electron transport layer is 1, 10-o-phenanthroline, 4-oxo-4, 5,6, 7-tetrahydro-1-benzofuran-3-carboxylic acid methyl ester, or 1-phenyl-1H-benzimidazole, respectively.
In one embodiment, in the oled panel of the present invention, the solvent material is solid at a temperature less than 80 ℃ and liquid at a temperature higher than 80 ℃.
In an embodiment of the oled panel of the present invention, the transparent electrode layer and the auxiliary cathode are in ohmic contact through the conductive contact.
In another embodiment, a method for fabricating an OLED panel includes providing a substrate; forming an anode layer and an auxiliary cathode on a portion of the substrate; forming a pixel defining layer on the substrate to separate the anode layer from the auxiliary cathode; sequentially forming a hole injection layer, a hole transport layer and a light emitting layer on the anode layer; forming a solvent layer on the auxiliary cathode, the solvent layer being solid at less than 80 ℃; forming an electron transport layer and a transparent electrode layer, wherein the electron transport layer and the transparent electrode layer cover the light-emitting layer and the solid solvent layer; and performing a heating process, wherein the solid solvent layer is converted into a liquid state at a temperature higher than 80 ℃, the electron transport layer above the solid solvent layer is dissolved and mixed with the solid solvent layer, and a conductive contact containing a conductive mixture composed of the electron transport layer and a solvent material for dissolving the solid solvent layer of the electron transport layer is formed between the transparent electrode and the auxiliary cathode after the temperature is reduced to less than 80 ℃.
In an embodiment of the method for manufacturing an oled panel of the present invention, the transparent electrode layer is made of ito or izo.
In an embodiment of the method for manufacturing an oled panel, the material of the electron transport layer is 4, 7-diphenyl-1, 10-phenanthroline, (8-hydroxyquinoline) lithium, or 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene, and the material of the solid solvent layer for dissolving the electron transport layer is 1, 10-phenanthroline, 4-oxo-4, 5,6, 7-tetrahydro-1-benzofuran-3-carboxylic acid methyl ester, or 1-phenyl-1H-benzimidazole, respectively.
In an embodiment of the method for manufacturing an oled panel of the present invention, the solid solvent layer is formed by an inkjet printing process.
In an embodiment of the present invention, the method for manufacturing an oled panel is characterized in that the transparent electrode layer and the auxiliary cathode are in ohmic contact through the conductive contact.
Compared with the prior art, the organic light-emitting diode panel and the manufacturing method thereof can effectively reduce the voltage drop at the center and the periphery of the panel during working when the thickness of the cathode is reduced by arranging the auxiliary cathode contact device. In addition, the auxiliary cathode is contacted with the cathode to realize ohmic contact through the arrangement of the conductive contact object of the conductive mixture containing the electron transport layer and the solid solvent layer material in the auxiliary cathode contact device, so that the resistance of the auxiliary cathode contact device can be reduced, the voltage drop of the cathode of the large-area high-resolution top emission panel can be reduced, the brightness uniformity and the display quality of the large-size panel can be improved, and the product competitiveness can be improved.
In order to make the aforementioned and other objects of the present invention more comprehensible, preferred embodiments accompanied with figures are described in detail below:
drawings
Fig. 1-8 are schematic cross-sectional views illustrating a method for fabricating an oled panel according to an embodiment of the invention.
Detailed Description
The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the invention may be practiced. Furthermore, directional phrases used herein, such as, for example, upper, lower, top, bottom, front, rear, left, right, inner, outer, lateral, peripheral, central, horizontal, lateral, vertical, longitudinal, axial, radial, uppermost or lowermost, etc., refer only to the orientation of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention.
Fig. 1-8 are schematic cross-sectional views illustrating a method for fabricating an oled panel according to an embodiment of the invention.
Referring to fig. 1, a substrate 100 is provided, and two metal traces 110 are formed on the substrate 100 at intervals. The two metal traces 110 are spaced apart by an opening 110A. Specifically, the substrate 100 is a glass substrate on which other elements (not shown) such as a Thin Film Transistor (TFT) may be disposed. The metal traces 110 on the left side in fig. 1 are used to electrically connect the pixels (not shown), and the metal traces 110 on the right side are used to electrically connect the auxiliary circuits (not shown), and the metal traces 110 are separated by about 10-30 micrometers (μm) from the openings 110A, so they are not electrically connected to each other.
Referring to fig. 2, a passivation layer 120 is formed on the substrate 100, the metal trace 110 and the opening 110A. The passivation layer 120 covers the surface of the metal traces 110 and fills the openings 110A therebetween. The passivation layer 120 is an inorganic insulating layer, an organic insulating layer, or a composite stacked film layer thereof. A planarization coating 130 is then formed on the passivation layer 120. The planarization coating 130 is an organic material, an inorganic material, or a mixture of organic and inorganic materials. Specifically, the planarization coating 130 is a plurality of layers of the same material or different materials. Specifically, the planarizing coating 130 is a siloxane or metal oxide. Metal oxides such as MgO, Al2O3、ZrO2、SnO2、ZnO、SiO2Or TiO2Or combinations of the foregoing metal oxides.
Referring to fig. 3, two openings 140 are formed sequentially through the planarization coating 130 and the passivation layer 120. Each opening 140 exposes a portion of each metal trace 130. Specifically, the opening 140 may be formed by photolithography and etching processes. Then, a first conductive layer is formed on the planarization coating 130 and fills the opening 140, and the first conductive layer is physically connected to the metal trace 110. Openings 151 are then formed in the first conductive layer, the openings 151 being between the openings 140 and exposing a portion of the underlying planarization coating 130, dividing the first conductive layer into a first portion 150A and a second portion 150B that are spaced apart. Specifically, the first portion 150A of the first conductive layer is physically connected to the left metal trace 110 to serve as the anode of the organic light emitting diode. The second portion 150B of the first conductive layer is physically connected to the right metal trace 110 for serving as a cathode contact. Specifically, the opening 151 may be formed by photolithography and etching processes. Specifically, the material of the first conductive layer is a conductive material such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO).
Referring to fig. 4, a pixel defining layer 160 is formed on the first conductive layer. The pixel defining layer 160 encloses a pixel opening 160A on the first portion 150A (anode layer) of the first conductive layer and encloses a cathode contact hole 160B on the second portion 150B (auxiliary cathode) of the first conductive layer. Specifically, the second portion 150B (auxiliary cathode) of the first conductive layer is separated from the first portion 150A (anode layer) of the first conductive layer by a pixel defining layer 160 partially disposed in the opening 151 (see fig. 3).
Referring to fig. 5, by performing the process 500, a Hole Injection Layer (HIL) 170, a Hole Transport Layer (HTL) 180, and an emitting layer (EML) 190 are sequentially formed in the pixel opening 160A on the first portion 150A (anode layer) of the first conductive layer from bottom to top.
Specifically, the process 500 for fabricating the hole injection layer 170, the hole transport layer 180, and the light emitting layer 190 may be a multi-pass inkjet printing process, and only the process 500 is shown here. Suitable materials for the hole injection layer 170, the hole transport layer 180, and the light emitting layer 190 may be used. Specifically, the hole injection layer 170 may be a material that facilitates control of a hole injection speed, such as CuPc or the like. The hole transport layer 180 may be a material having high thermal stability and facilitating hole transport, such as NPB (N, N ' - (1-naphthyl) -N, N ' diphenyl-4, 4 ' biphenyldiamine) or the like. The light-emitting layer 190 may be a material having high light-emitting efficiency, such as Alq 3.
Referring to fig. 6, a solid solvent layer 200 is formed in the cathode contact hole 160B on the second portion 150B (auxiliary cathode) of the first conductive layer by performing a process 600.
Specifically, the process 600 of fabricating the solid solvent layer 200 may be an inkjet printing process. The solid solvent layer 200 is made of a suitable material that is solid at normal temperature (25 ℃) and liquid after being heated beyond normal temperature, and can dissolve the subsequently formed electron transport layer, for example, 1, 10-phenanthroline, 4-oxo-4, 5,6, 7-tetrahydro-1-benzofuran-3-carboxylic acid methyl ester, 1-phenyl-1H-benzimidazole, or the like. The material of the solid solvent layer 200 may be non-conductive or conductive, and may be a single component or a mixture. Since the solid solvent layer 200 is solid at room temperature, the inkjet printing head used in the inkjet printing process of the process 600 is a thermal head, the material of the solid solvent layer 200 that is solid at room temperature is heated to be liquid and then printed in the cathode contact hole 160B, and the solid solvent layer 200 formed in the cathode contact hole 160B is solid after being cooled to room temperature.
Referring to fig. 7, an Electron Transport Layer (ETL) 210 and a transparent electrode 220 are formed. The electron transport layer 210 fills the remaining space of the pixel opening 160A and the cathode contact hole 160B, extends from within the pixel opening 160A into the cathode contact hole 160B and covers the pixel defining layer 160 to contact the solid solvent layer 200. The transparent electrode layer 220 is formed on the electron transport layer 210 to serve as a cathode.
The electron transport layer 210 is formed of an evaporation material by an evaporation method. The transparent electrode layer 220 is also formed of an evaporation material by an evaporation method. Specifically, the electron transport layer 210 may be a material having high thermal stability and facilitating electron transport, such as 4, 7-diphenyl-1, 10-phenanthroline, (8-hydroxyquinoline) lithium, 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene, etc., which may be dissolved by the aforementioned 1, 10-phenanthroline, 4-oxo-4, 5,6, 7-tetrahydro-1-benzofuran-3-carboxylic acid methyl ester or 1-phenyl-1H-benzimidazole, respectively, so that the solvent and the dissolved conductive particles of the electron transport layer 210 are mixed into a conductive mixture. The transparent electrode layer 220 is made of a transparent conductive material such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO).
Referring to fig. 8, next, a heating process 700 is performed on the OLED panel shown in fig. 7, i.e., the OLED panel shown in fig. 7 is heated to a temperature exceeding the normal temperature, for example, a temperature higher than the melting point (about greater than 80 ℃) of the solvent material of the solid solvent layer 200, so that the solid solvent layer 200 in the solid state at the normal temperature is transformed into the liquid state, and then the electron transport layer 210 above the solid solvent layer is dissolved and mixed with the liquid solvent. The OLED panel is then cooled to room temperature, such that the electron transport layer 210 and the solvent layer 200 for dissolving the electron transport layer 210 are solidified into a conductive contact 300 comprising a conductive mixture of the electron transport layer 210 and a solvent material for dissolving the solid solvent layer 200 of the electron transport layer 210, and thus the transparent electrode layer (cathode) 220 and the second portion 150B (auxiliary cathode) of the first conductive layer can be electrically connected through the conductive contact 300.
As shown in fig. 8, the present invention provides an OLED panel, which is a top-emitting OLED display panel, including OLED devices and auxiliary cathode contact devices disposed on a substrate and spaced apart by a defining layer 160. The OLED device includes a first portion 150A (anode layer) of the first conductive layer, a hole injection layer 170, a hole transport layer 180, a light emitting layer 190, an electron transport layer 210, and a transparent electrode layer 220 sequentially formed on the first portion 150A (anode layer) of the first conductive layer. The auxiliary cathode contact device comprises a second portion 150B of the first conductive layer (auxiliary cathode), and a conductive contact 300 and a transparent electrode layer 220 sequentially formed on the second portion 150B of the first conductive layer (auxiliary cathode), wherein the conductive contact 300 comprises a conductive mixture of the material of the electron transport layer 210 and the material of the solid solvent layer 200 for dissolving the electron transport layer. The electron transport layer of the OLED device and the conductive contact 300 of the auxiliary cathode contact device are electrically connected through the transparent electrode layer 220.
In addition, in the method for fabricating the OLED of the present invention, the second portion 150B (auxiliary cathode) of the first conductive layer is disposed on the substrate 100 and spaced from the transparent electrode layer (cathode) 220, the cathode contact hole 160B is disposed on the pixel defining layer 160 and corresponding to the second portion 150B (auxiliary cathode) of the first conductive layer, the electron transport layer 210 extends from the pixel opening 160A to the cathode contact hole 160B during the fabrication process to space the transparent electrode layer (cathode) 220 from the second portion 150B (auxiliary cathode) of the first conductive layer, and the OLED panel is heated 700 to make the solvent layer 200 dissolve the material of the electron transport layer 210 above the solvent layer 200 and cool down the material to form a conductive mixture including the electron transport layer 210 and the material of the solid solvent layer 200 for dissolving the electron transport layer 210 Electrical contact 300 to enable electrical communication between transparent electrode layer (cathode) 220 and second portion 150B of the first conductive layer (auxiliary cathode). The manufactured OLED device is applied to an OLED display panel and works, positive voltage can be applied to the first part 150A (anode layer) of the first conducting layer, the same negative voltage is respectively applied to the transparent electrode layer (cathode) 220 and the second part 150B (auxiliary cathode) of the first conducting layer, the second part 150B (auxiliary cathode) of the first conducting layer can directly provide voltage and current compensation for the transparent electrode layer (cathode) 220, and the second part 150B (auxiliary cathode) of the first conducting layer is arranged on the OLED device of each pixel and is electrically communicated with the transparent electrode layer (cathode) 220, so that the problem of uneven brightness caused by large-area voltage Drop (IR Drop) of the OLED display panel can be prevented.
According to the OLED panel and the manufacturing method thereof, the voltage drop of the center and the periphery of the panel during working can be effectively reduced when the thickness of the metal cathode is reduced by arranging the auxiliary cathode contact device. In addition, the resistance of the auxiliary cathode contact device can be further reduced by arranging the conductive contact 300, which penetrates through the conductive mixture containing the materials of the electron transport layer 210 and the solid solvent layer 200, in the auxiliary cathode contact device, so that the second part 150B (auxiliary cathode) of the first conductive layer is in contact with the transparent electrode 220 (cathode) to realize ohmic contact, the resistance of the auxiliary cathode contact device can be further reduced, the voltage drop of the cathode of the large-area high-resolution top emission panel can be reduced, the brightness uniformity and the display quality of the large-size panel can be improved, and the product competitiveness can be improved.
The present invention has been described in relation to the above embodiments, which are only exemplary of the implementation of the present invention. It must be noted that the disclosed embodiments do not limit the scope of the invention. On the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.

Claims (10)

1. An organic light emitting diode panel, comprising
A substrate;
a pixel defining layer disposed on a portion of the substrate;
an organic light emitting diode device and an auxiliary cathode contact device disposed on the substrate and spaced apart from the pixel defining layer, wherein the organic light emitting diode device includes an anode layer, a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer sequentially formed on one portion of the substrate, and the auxiliary cathode contact device includes an auxiliary cathode and a conductive contact sequentially formed on another portion of the substrate, the conductive contact including a conductive mixture composed of the electron transport layer and a solvent material for dissolving the electron transport layer, the conductive mixture being adjacent to and in contact with the pixel defining layer; and
and the transparent electrode layer covers the electron transmission layer, the pixel definition layer and the conductive contact.
2. The oled panel as claimed in claim 1, wherein the transparent electrode layer is made of indium tin oxide or indium zinc oxide.
3. The organic light emitting diode panel as claimed in claim 1, wherein the material of the electron transport layer is 4, 7-diphenyl-1, 10-phenanthroline, (8-hydroxyquinoline) lithium, or 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene, and the solvent material for dissolving the electron transport layer is 1, 10-phenanthroline, 4-oxo-4, 5,6, 7-tetrahydro-1-benzofuran-3-carboxylic acid methyl ester, or 1-phenyl-1H-benzimidazole, respectively.
4. The OLED panel of claim 3, wherein the solvent material is solid at room temperature and liquid above the melting point of the solvent material.
5. The OLED panel of claim 1, wherein the transparent electrode layer is in ohmic contact with the auxiliary cathode via the conductive contact.
6. A method for fabricating an OLED panel includes the steps of
Providing a substrate;
forming an anode layer and an auxiliary cathode on a portion of the substrate;
forming a pixel defining layer on the substrate to separate the anode layer from the auxiliary cathode;
sequentially forming a hole injection layer, a hole transport layer and a light emitting layer on the anode layer;
forming a solid solvent layer on the auxiliary cathode, wherein the solid solvent layer is solid at normal temperature and is liquid at a temperature higher than the melting point of a solvent material of the solid solvent layer;
forming an electron transport layer and a transparent electrode layer, wherein the electron transport layer and the transparent electrode layer cover the light-emitting layer and the solid solvent layer; and
and performing a heating process, wherein the solid solvent layer is converted into a liquid state at a temperature higher than the melting point of the solvent material of the solid solvent layer, the electron transport layer above the solid solvent layer is dissolved and mixed with the solid solvent layer, and a conductive contact comprising a conductive mixture composed of the electron transport layer and the solvent material of the solid solvent layer dissolving the electron transport layer is formed between the transparent electrode and the auxiliary cathode after the temperature is reduced to room temperature, wherein the conductive mixture is adjacent to and in contact with the pixel defining layer.
7. The method of claim 6, wherein the transparent electrode layer is made of indium tin oxide or indium zinc oxide.
8. The method of claim 6, wherein the electron transport layer is made of 4, 7-diphenyl-1, 10-phenanthroline, (8-hydroxyquinoline) lithium, or 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene, and the solid solvent layer for dissolving the electron transport layer is made of 1, 10-phenanthroline, 4-oxo-4, 5,6, 7-tetrahydro-1-benzofuran-3-carboxylic acid methyl ester, or 1-phenyl-1H-benzimidazole, respectively.
9. The method as claimed in claim 6, wherein the solid solvent layer is formed by an inkjet printing process.
10. The method as claimed in claim 9, wherein the transparent electrode layer and the auxiliary cathode are in ohmic contact via the conductive contact.
CN201911086216.3A 2019-11-08 2019-11-08 Organic light emitting diode panel and manufacturing method thereof Active CN110993812B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201911086216.3A CN110993812B (en) 2019-11-08 2019-11-08 Organic light emitting diode panel and manufacturing method thereof
PCT/CN2019/120094 WO2021088141A1 (en) 2019-11-08 2019-11-22 Organic light emitting diode panel and manufacturing method therefor
US16/625,772 US11329246B2 (en) 2019-11-08 2019-11-22 Organic light emitting diode panel and method for fabricating same

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