CN110911580B - Organic light emitting diode display panel and preparation method thereof - Google Patents
Organic light emitting diode display panel and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
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- H10K50/00—Organic light-emitting devices
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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Abstract
An organic light emitting diode display panel and a method for manufacturing the same. The organic light emitting diode display panel includes: a back plate; a plurality of metal routing layers disposed on the backplane; a passivation layer disposed on the metal routing layer and the back plate; a planarization layer disposed on the passivation layer; the first electrode layers are arranged on the planarization layer and are electrically connected with the metal routing layer through first via holes; and a plurality of pixel defining layers disposed on the first electrode layer; each two adjacent pixel defining layers are respectively defined with an organic light-emitting diode device region or an auxiliary cathode contact hole region, and the organic light-emitting diode device regions and the auxiliary cathode contact hole regions are arranged at intervals; the auxiliary cathode contact hole region comprises an electrode modification layer arranged on the first electrode layer. According to the display panel, the electrode modification layer is arranged, so that the voltage drop is reduced, and the brightness uniformity of the panel is improved.
Description
[ technical field ] A method for producing a semiconductor device
The disclosure relates to the field of display technologies, and in particular, to an organic light emitting diode display panel and a manufacturing method thereof.
[ background ] A method for producing a semiconductor device
The large-sized Active-Matrix Organic Light-Emitting Diode (AMOLED) display adopts a top-Emitting panel structure, which can sufficiently improve the resolution of the panel. In the top emission AMOLED structure, light emitted from an Organic Light Emitting Diode (OLED) of a front-mounted device structure needs to pass through an electron transport layer and a cathode, and therefore, the electron transport layer and the cathode must have sufficient transparency, and therefore, the thinner the cathode is, the better the cathode is, but the reduced thickness of the cathode inevitably increases the resistance of the cathode greatly, so that when the panel operates, a voltage drop occurs at the center and around of the large-sized panel when a current flows through the high-resistance transparent cathode.
In the field of printed electronics of organic light emitting diode display panels, there is often a need for low work function materials to be applied in organic electronic devices to facilitate the injection and extraction of electrons.
When an electron transport layer material is selected to prepare an organic light emitting diode device, the Lowest Unoccupied Molecular Orbital (LUMO) energy level of the electron transport material is matched with the work function of a cathode, and the electron transport material has high electron mobility so that electrons can be effectively injected. Common electron transport materials have large band gaps and high LUMO energy levels. Fig. 1 is a schematic energy level diagram of an organic light emitting diode according to the prior art. As shown in fig. 1, taking the electron transport material Bphen as an example, the LUMO level is 3.2eV, and the level of the Mg and Ag alloy is 3.7eV, and the MgAg electrode needs to be modified so that electrons can be smoothly injected into Bphen by the MgAg alloy. Conventional polymer opto-electronic devices must employ low work function active metals (e.g., Ba, Ca, etc.) as cathodes to maintain efficient electron injection and extraction. However, Ba, Ca, etc. electrodes are not stable in air.
Therefore, there is a need to provide an improved oled display panel to solve the problems of the prior art.
[ summary of the invention ]
In order to solve the above-mentioned problems, an object of the present disclosure is to provide an organic light emitting diode display panel and a method for fabricating the same, so as to reduce voltage drop and improve brightness uniformity of the panel.
To achieve the above objective, the present disclosure provides an organic light emitting diode display panel. The organic light emitting diode display panel includes: a back plate; a plurality of metal routing layers disposed on the backplane; a passivation layer disposed on the metal routing layer and the back plate; a planarization layer disposed on the passivation layer; the first electrode layers are arranged on the planarization layer and are electrically connected with the metal routing layer through first via holes; and a plurality of pixel defining layers disposed on the first electrode layer; each two adjacent pixel defining layers are respectively defined with an organic light-emitting diode device region or an auxiliary cathode contact hole region, and the organic light-emitting diode device regions and the auxiliary cathode contact hole regions are arranged at intervals; the auxiliary cathode contact hole region includes an electrode modification layer disposed on the first electrode layer.
In one embodiment of the present disclosure, the material of the first electrode layer is Indium Tin Oxide (ITO).
In one embodiment of the present disclosure, the material of the electrode modification layer includes ethoxylated polyethyleneimine.
In one embodiment of the present disclosure, the material of the electrode modification layer comprises
Wherein x, y, z are greater than 0.
In one embodiment of the present disclosure, the organic light emitting diode device region includes a hole injection layer, a hole transport layer and a light emitting layer sequentially disposed on the first electrode layer.
In one embodiment of the present disclosure, the oled display panel further includes an electron transport layer disposed on the pixel defining layer, the light emitting layer and the electrode modification layer; and a second electrode layer disposed on the electron transport layer; the second electrode layer is a transparent electrode.
In order to achieve the above object, the present disclosure further provides a method for manufacturing an organic light emitting diode display panel. The preparation method of the organic light emitting diode comprises providing a back plate; arranging a plurality of metal routing layers on the back plate; arranging a passivation layer on the metal routing layer and the back plate; disposing a planarization layer on the passivation layer; forming a first via hole, wherein the first via hole penetrates through the passivation layer and the planarization layer; arranging a plurality of first electrode layers on the planarization layer and electrically connecting the first electrode layers with the metal wiring layers through the first via holes; and disposing a plurality of pixel defining layers on the first electrode layer; each two adjacent pixel defining layers are respectively defined with an organic light-emitting diode device region or an auxiliary cathode contact hole region, and the organic light-emitting diode device regions and the auxiliary cathode contact hole regions are arranged at intervals; and arranging an electrode modification layer on the first electrode layer in the auxiliary cathode contact hole area.
In one embodiment of the present disclosure, the electrode modification layer is formed of a material including
Is ink-jet printed on the first electrode layer, wherein x, y, z are greater than 0.
In one embodiment of the present disclosure, the method further comprises sequentially disposing a hole injection layer, a hole transport layer, and a light emitting layer on the first electrode layer in the OLED device region; arranging an electron transport layer on the pixel defining layer, the light emitting layer and the electrode modifying layer; and
disposing a second electrode layer on the electron transport layer; wherein the second electrode layer is a transparent electrode.
In one embodiment of the present disclosure, the material of the first electrode layer is Indium Tin Oxide (ITO).
The invention provides an organic light-emitting diode display panel and a preparation method thereof.A electrode modification layer is arranged in an auxiliary cathode contact hole region, so that the resistance of the auxiliary cathode contact hole region is reduced, a dipole moment is formed on an interface of a first electrode layer and an electron transmission layer, the contact potential barrier between the first electrode layer and the electron transmission layer is effectively reduced, ohmic contact is realized, the voltage drop of the cathode of a large-area top emission panel is reduced, and the brightness uniformity of the large-size panel is improved.
In order to make the aforementioned and other aspects of the disclosure more comprehensible, preferred embodiments accompanied with figures are described in detail below.
[ description of the drawings ]
Fig. 1 shows a schematic energy level diagram of an organic light emitting diode according to the prior art;
FIG. 2 is a schematic diagram of an OLED display panel according to the present disclosure; and
fig. 3 is a flow chart illustrating a method for manufacturing an oled display panel according to the present disclosure.
[ detailed description ] embodiments
In order to make the aforementioned and other objects, features and advantages of the present disclosure comprehensible, preferred embodiments accompanied with figures are described in detail below. Furthermore, directional phrases used in this disclosure, such as, for example, upper, lower, top, bottom, front, rear, left, right, inner, outer, lateral, peripheral, central, horizontal, lateral, vertical, longitudinal, axial, radial, uppermost or lowermost, etc., refer only to the orientation of the attached drawings. Accordingly, the directional terms used are used for the purpose of illustration and understanding of the present disclosure, and are not used to limit the present disclosure.
In the drawings, elements having similar structures are denoted by the same reference numerals.
Fig. 2 shows a schematic structural diagram of an oled display panel according to the present disclosure. As can be seen from fig. 2, the organic light emitting diode display panel of the present disclosure includes: the back plate comprises a back plate 1, a plurality of metal routing layers 2, a passivation layer 3, a planarization layer 4, a plurality of first electrode layers 5 and a plurality of pixel definition layers 6. The plurality of metal routing layers 2 are disposed on the backplane 1, the passivation layer 3 is disposed on the metal routing layers 2 and the backplane 1, the planarization layer 4 is disposed on the passivation layer 3, the plurality of first electrode layers 5 are disposed on the planarization layer 4 and electrically connected to the metal routing layers 2 through first via holes (not shown), and the plurality of pixel definition layers 6 are disposed on the first electrode layers 5. Wherein, every two adjacent pixel defining layers 6 are respectively defined with an organic light emitting diode device region or an auxiliary cathode contact hole region, and the organic light emitting diode device region and the auxiliary cathode contact hole region are arranged at intervals; the auxiliary cathode contact hole region comprises an electrode modification layer 7 disposed on the first electrode layer 5.
The organic light emitting diode display panel of the present disclosure is preferably applied to a large-sized OLED display device.
Specifically, the backplane 1 may be any prior art AMOLED backplane for driving circuits. Specifically, the back plate may include a substrate, a buffer layer deposited on the substrate, a polysilicon layer deposited on the buffer layer, source/drain electrodes disposed on the polysilicon layer, a gate insulating layer disposed on the source/drain electrodes, a gate electrode disposed on the gate insulating layer, and the like, and may be formed through deposition, photolithography, and etching processes.
The metal wiring layer 2 is a source drain layer, and the source drain layer can be made of molybdenum, aluminum-nickel alloy, molybdenum-tungsten alloy, chromium, copper or other metals, or a combination of the above materials.
The passivation layer 3 is formed on the metal routing layer 2, and the passivation layer 3 is an inorganic film. Preferably, the passivation layer material is a silicon nitride compound, and the inorganic film layer may be a plurality of layers according to specific situations, which is not limited herein.
The planarization layer 4 is formed on the passivation layer 3, firstly, a yellow light process is adopted to pattern the planarization layer 4, and then, an etching process is carried out on the passivation layer 3 to form a first through hole; the first via hole electrically connects the first electrode layer 5 and the metal wiring layer 2.
Further, in an embodiment, the material of the first electrode layer 5 is Indium Tin Oxide (ITO). In particular, the first electrode layer 5 is an anode layer patterned to form at least two anodes distributed in an array; the anode layer is mainly used to provide holes for absorbing electrons, and is typically a transparent material, which may be an ITO or IZO layer.
The pixel defining layer 6 is formed on the first electrode layer 5, and covers the first electrode layer 5 and the planarization layer 4.
Further, in an embodiment, the material of the electrode modification layer 7 includes ethoxylated polyethyleneimine.
Preferably, the material of the electrode modification layer 7 comprises
Wherein x, y, z are greater than 0.
In detail, according to the present disclosure, the electrode modification layer 7 is disposed between the first electrode layer and the electron transport layer, and the electrode modification layer 7 is chemically or physically adsorbed on the first electrode layer with high work function, so that a molecular dipole can be formed on an adsorption interface, and a work function of the first electrode layer can be effectively changed; and the ethoxylated polyethyleneimine is used as the material of the electrode modification layer 7, so that the resistance of the auxiliary cathode contact hole region can be effectively reduced.
Further, in one embodiment, the organic light emitting diode device region includes a hole injection layer 8, a hole transport layer 9, and an emission layer 10 sequentially disposed on the first electrode layer.
In one embodiment, the organic light emitting diode display panel further includes an electron transport layer 11 and a second electrode layer 12. The electron transport layer 11 is disposed on the pixel defining layer 6, the light emitting layer 10 and the electrode modification layer 7, and the second electrode layer 12 is disposed on the electron transport layer 11.
Further, the hole injection layer 8, the hole transport layer 9, the light emitting layer 10, the electron transport layer 11, and the second electrode layer 12 may be materials commonly used in the art, and are not limited thereto.
The invention provides an organic light-emitting diode display panel, which is characterized in that an electrode modification layer is arranged in an auxiliary cathode contact hole region, so that the resistance of the auxiliary cathode contact hole region is reduced, a dipole moment is formed on an interface of a first electrode layer and an electron transmission layer, the contact potential barrier between the first electrode layer and the electron transmission layer is effectively reduced, ohmic contact is realized, the voltage drop of the cathode of a large-area top emission panel is reduced, and the brightness uniformity of a large-size panel is improved.
Fig. 3 is a flow chart illustrating a method for manufacturing an oled display panel according to the present disclosure.
The present disclosure additionally provides a method for manufacturing an organic light emitting diode display panel. The preparation method of the organic light emitting diode comprises the following steps:
s10, providing a backboard 1;
s20, arranging a plurality of metal wiring layers 2 on the back plate 1;
s30, arranging a passivation layer 3 on the metal routing layer 2 and the back plate 1;
s40, arranging a planarization layer 4 on the passivation layer 3;
s50, forming a first via hole, wherein the first via hole penetrates through the passivation layer 3 and the planarization layer 4;
s60, arranging a plurality of first electrode layers 5 on the planarization layer 4 and electrically connecting the first electrode layers with the metal wiring layer 2 through the first via holes; and
s70, disposing a plurality of pixel defining layers 6 on the first electrode layer 5; wherein, every two adjacent pixel defining layers 6 are respectively defined with an organic light emitting diode device region or an auxiliary cathode contact hole region, and the organic light emitting diode device region and the auxiliary cathode contact hole region are arranged at intervals; and
and S80, arranging an electrode modification layer 7 on the first electrode layer 5 in the auxiliary cathode contact hole area.
In detail, the back plate 1, the metal routing layer 2, the passivation layer 3, the planarization layer 4, the first electrode layer 5 and the pixel defining layer 6 can be formed by deposition, photolithography and etching processes.
To explain, in one embodiment, the electrode modification layer is made of a material including
Is ink-jet printed on the first electrode layer, wherein x, y, z are greater than 0.
Specifically, the thin film of the electrode modification layer 7 can be formed by ink-jet printing of the above-described material dissolved in water or an alcohol solvent.
Further explaining, in one embodiment, the method further comprises sequentially disposing a hole injection layer 8, a hole transport layer 9 and a light emitting layer 10 on the first electrode layer 5 in the organic light emitting diode device region; disposing an electron transport layer 11 on the pixel defining layer 6, the light emitting layer 10 and the electrode modification layer 7; and a second electrode layer 12 is provided on the electron transport layer 11.
In detail, the hole injection layer 8, the hole transport layer 9, and the light emitting layer 10 may be prepared using an inkjet printing technique. The electron transport layer 11 and the second electrode layer 12 may be prepared by vacuum evaporation.
In summary, according to the present disclosure, the electrode modification layer is disposed in the auxiliary cathode contact hole region, so as to reduce the resistance of the auxiliary cathode contact hole region, and form a dipole moment on the interface between the first electrode layer and the electron transport layer, thereby effectively reducing the contact barrier between the first electrode layer and the electron transport layer, and realizing ohmic contact, further reducing the voltage drop of the cathode of the large-area top emission panel, and improving the brightness uniformity of the large-size panel.
Although the disclosure has been shown and described with respect to one or more implementations, equivalent alterations and modifications will occur to others skilled in the art based upon a reading and understanding of this specification and the annexed drawings. The present disclosure includes all such modifications and alterations, and is limited only by the scope of the appended claims. In particular regard to the various functions performed by the above described components, the terms used to describe such components are intended to correspond, unless otherwise indicated, to any component which performs the specified function of the described component (e.g., that is functionally equivalent), even though not structurally equivalent to the disclosed structure which performs the function in the herein illustrated exemplary implementations of the specification. In addition, while a particular feature of the specification may have been disclosed with respect to only one of several implementations, such feature may be combined with one or more other features of the other implementations as may be desired and advantageous for a given or particular application. Furthermore, to the extent that the terms "includes," has, "" contains, "or variants thereof are used in either the detailed description or the claims, such terms are intended to be inclusive in a manner similar to the term" comprising.
The foregoing is merely a preferred embodiment of the present disclosure, and it should be noted that modifications and refinements may be made by those skilled in the art without departing from the principle of the present disclosure, and these modifications and refinements should also be construed as the protection scope of the present disclosure.
Claims (9)
1. An organic light emitting diode display panel, comprising:
a back plate;
a plurality of metal routing layers disposed on the backplane;
a passivation layer disposed on the metal routing layer and the back plate;
a planarization layer disposed on the passivation layer;
the first electrode layers are arranged on the planarization layer and are electrically connected with the metal routing layer through first via holes; and
a plurality of pixel defining layers disposed on the first electrode layer;
the first electrode layers can be divided into the first electrode layers positioned in the organic light-emitting diode device area and the first electrode layers positioned in the auxiliary cathode contact hole area;
the auxiliary cathode contact hole region comprises an electrode modification layer arranged on the first electrode layer positioned in the auxiliary cathode contact hole region, and the material of the electrode modification layer comprises ethoxylated polyethyleneimine;
the organic light-emitting diode display panel further comprises an electron transmission layer arranged on the electrode modification layer.
2. The oled display panel of claim 1, wherein the material of the first electrode layer is indium tin oxide.
3. The oled display panel of claim 1, wherein the material of the electrode modification layer includes
Wherein x, y, z are greater than 0.
4. The organic light emitting diode display panel according to claim 1, wherein the organic light emitting diode device region comprises a hole injection layer, a hole transport layer, and a light emitting layer sequentially disposed on the first electrode layer.
5. The organic light emitting diode display panel of claim 4, further comprising:
a second electrode layer disposed on the electron transport layer; wherein the second electrode layer is a transparent electrode;
the electron transport layer is further disposed on the pixel defining layer and the light emitting layer.
6. A method for preparing an organic light emitting diode display panel comprises providing a back plate;
arranging a plurality of metal routing layers on the back plate;
arranging a passivation layer on the metal routing layer and the back plate;
disposing a planarization layer on the passivation layer;
forming a first via hole, wherein the first via hole penetrates through the passivation layer and the planarization layer; arranging a plurality of first electrode layers on the planarization layer and electrically connecting the first electrode layers with the metal wiring layers through the first via holes; and
disposing a plurality of pixel defining layers on the first electrode layer;
the first electrode layers can be divided into the first electrode layers positioned in the organic light-emitting diode device area and the first electrode layers positioned in the auxiliary cathode contact hole area;
arranging an electrode modification layer on the first electrode layer positioned in the auxiliary cathode contact hole region, wherein the electrode modification layer is made of ethoxylated polyethyleneimine;
and arranging an electron transmission layer on the electrode modification layer.
7. The method of claim 6, wherein the electrode modification layer comprises
Is ink-jet printed on the first electrode layer, wherein x, y, z are greater than 0.
8. The method of manufacturing an organic light emitting diode display panel according to claim 6, the method further comprising:
sequentially arranging a hole injection layer, a hole transport layer and a light emitting layer on the first electrode layer of the organic light emitting diode device area;
disposing the electron transport layer further on the pixel defining layer and the light emitting layer; and
disposing a second electrode layer on the electron transport layer; the second electrode layer is a transparent electrode.
9. The method according to claim 6, wherein the first electrode layer is made of indium tin oxide.
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| US11690241B2 (en) | 2020-05-09 | 2023-06-27 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | OLED with auxiliary electrode contacting electron transport layer |
| CN112133843B (en) * | 2020-09-25 | 2024-01-09 | 京东方科技集团股份有限公司 | Light-emitting panel, display device and manufacturing method of light-emitting panel |
| CN114141852B (en) * | 2021-11-30 | 2023-05-05 | 深圳市华星光电半导体显示技术有限公司 | Flexible display panel and flexible display device |
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| CN110993812A (en) * | 2019-11-08 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | Organic light emitting diode panel and manufacturing method thereof |
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