CN108417738A - The production method of OLED device - Google Patents
The production method of OLED device Download PDFInfo
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- CN108417738A CN108417738A CN201810232021.4A CN201810232021A CN108417738A CN 108417738 A CN108417738 A CN 108417738A CN 201810232021 A CN201810232021 A CN 201810232021A CN 108417738 A CN108417738 A CN 108417738A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000009471 action Effects 0.000 claims abstract description 7
- 230000015556 catabolic process Effects 0.000 claims abstract description 7
- 230000005684 electric field Effects 0.000 claims abstract description 6
- 230000005540 biological transmission Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000002209 hydrophobic effect Effects 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 2
- 238000007323 disproportionation reaction Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 186
- 230000005611 electricity Effects 0.000 description 7
- 229920001621 AMOLED Polymers 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of production method of OLED device,Setting and the cathode contact layer of anode layer separately on underlay substrate,Corresponding to the top of cathode contact layer setting cathode contacts hole in pixel defining layer,Electron transfer layer extends in cathode contacts hole out of pixel openings and is spaced apart cathode layer with cathode contact layer in manufacturing process,Before proper device operation,In order to make to be conducted between cathode contact layer and cathode layer,Apply the positive voltage of phase equipotential to cathode layer and anode layer,The voltage for being less than cathode layer potential is applied to cathode contact layer simultaneously,Make to form potential difference between cathode contact layer and cathode layer,Electron transfer layer is breakdown and conductive under the action of electric field,To realize conducting for cathode layer and cathode contact layer,OLED device is at work,Cathode contacts aperture layer directly can provide voltage and current compensation to cathode layer,And then brightness disproportionation problem caused by capable of preventing OLED display panel large area from pressure drop occur.
Description
Technical field
The present invention relates to display technology field more particularly to a kind of production methods of OLED device.
Background technology
Organic electroluminescent diode (Organic Light Emitting Diodes, OLED) belongs to a kind of Novel electric
Flow pattern light emitting semiconductor device is the injection by controlling the device carrier and complex excitation organic material luminescence display, belongs to
In a kind of autonomous luminescence technology.Compared to the liquid crystal display (Liquid Crystal Display, LCD) passively to shine, from
The OLED display of main light emission has many advantages, such as that fast response time, contrast are high, visual angle is wide, and Flexible Displays easy to implement,
It is generally had an optimistic view of in the industry, industry, which unanimously thinks OLED display very likely, becomes the main product of next-generation display technology.
Active matrix organic electroluminescence diode (Active-matrix organic light emitting
Diode, AMOLED) it is essentially identical with the displaying principle of two kinds of panels of LCD, all it is the film crystal by controlling each sub-pixel
(Thin Film Transistor, TFT) on off state is managed to realize display.The two difference lies in：AMOLED, which is shown, is
The electric current on OLED, which is controlled, by TFT changes its light emission luminance；LCD, which is shown, to be loaded at liquid crystal cell both ends by TFT controls
Voltage adjusts the transmissivity of its backlight.The two is compared, and to the current drive capability of TFT, displayer requires higher.OLED
Very sensitive to its driving current, faint curent change can influence its luminous intensity, therefore it is required that TFT driving tubes can continue surely
Operating current is provided surely.This proposes strict requirements to the stability of AMOLED driving circuits, which also improves pair
The design object of AMOLED driving circuits.
Under room temperature, metallic conductor resistance is nonzero value, certain voltage drop is will produce by the electric current of conductor, this phenomenon
It is referred to as pressure drop (IR Drop).IR Drop on plain conductor can lead to the different location at distance input end, and there are potential differences
It is different.On the panel of large-area displays, this IR Drop can make the electric current on the OLED in different location generate difference,
And then lead to panel non-uniform light, image Image texture quality.
Invention content
The purpose of the present invention is to provide a kind of production methods of OLED device, can effectively prevent OLED device
IR Drop, and then improve the brightness disproportionation problem of OLED display panel.
To achieve the above object, the present invention provides a kind of production method of OLED device, include the following steps：
Step S1, underlay substrate is provided, form anode layer and cathode contact layer separately on underlay substrate；
Step S2, pixel defining layer is formed on underlay substrate, anode layer and cathode contact layer, the pixel defining layer exists
Pixel openings are crossed on the anode layer and cathode contacts hole is correspondingly provided with above the cathode contact layer；
Step S3, hole injection layer, hole transmission layer, luminescent layer and electricity are sequentially formed from the bottom to top on the anode layer
Sub- transport layer, the electron transfer layer extended to out of described pixel openings in cathode contacts hole and with the cathode contact layer phase
Contact；
Step S4, cathode layer, the cathode layer covered cathode contact layer, the electronics are formed on the electron transport layer
Cathode layer is spaced apart by transport layer with cathode contact layer；
Step S5, apply the voltage of phase equipotential to the anode layer and cathode layer, while electricity is applied to cathode contact layer
Gesture is less than the voltage of cathode layer potential, makes to form potential difference between cathode contact layer and cathode layer, the electron transfer layer is in electricity
It is breakdown and conductive under the action of, to make the cathode layer and cathode contact layer conduct.
In the step S5, the potential difference formed between the cathode contact layer and cathode layer is 10V-30V.
In the step S5, the state -30 minutes 5 minutes of the cathode contact layer and cathode layer there are potential difference is kept.
In the step S5, the voltage applied to the anode layer and cathode layer is 10V-30V, to the cathode contact layer
The voltage of application is -20V-20V.
In the step S3, the electron transfer layer, which is made by evaporation material by vapour deposition method, to be formed.
In the step S3, vapour deposition method is respectively adopted in the hole injection layer, hole transmission layer and luminescent layer or ink-jet is beaten
Print legal system is formed.
The material of the anode layer and cathode contact layer is hydrophilic conductive material, and the material of the pixel defining layer is
Hydrophobic material.
In the step S3, the hole injection layer, hole transmission layer and luminescent layer are formed in the pixel openings.
The cathode contact layer by pixel defining layer simultaneously with anode layer, hole injection layer, hole transmission layer, luminescent layer
Separation.
In the step S1,10 μm -20 μm are separated by between the anode layer and cathode contact layer.
Beneficial effects of the present invention：A kind of production method of OLED device provided by the invention, is arranged on underlay substrate
With the cathode contact layer of anode layer separately, cathode contacts are set corresponding to the top of cathode contact layer in pixel defining layer
Hole, electron transfer layer extends in cathode contacts hole out of pixel openings and by cathode layer and cathode contacts interlayer in manufacturing process
It separates, before proper device operation, in order to make to be conducted between cathode contact layer and cathode layer, cathode layer and anode layer is applied
Add the positive voltage of phase equipotential, while the voltage for being less than cathode layer potential is applied to cathode contact layer, makes cathode contact layer
Potential difference is formed between cathode layer, electron transfer layer is breakdown and conductive under the action of electric field, to realize cathode layer and
Cathode contact layer conducts, and at work, cathode contacts aperture layer directly can provide voltage and current to OLED device to cathode layer
Compensation, and then brightness disproportionation problem caused by capable of preventing OLED display panel large area from IR Drop occur.
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with the detailed of the present invention
Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
Description of the drawings
Below in conjunction with the accompanying drawings, it is described in detail by the specific implementation mode to the present invention, technical scheme of the present invention will be made
And other beneficial effects are apparent.
In attached drawing,
Fig. 1 is the flow chart of the production method of the OLED device of the present invention；
Fig. 2 is the schematic diagram of the step 1 of the production method of the OLED device of the present invention；
Fig. 3 is the schematic diagram of the step 2 of the production method of the OLED device of the present invention；
Fig. 4 is the schematic diagram of the step 3 of the production method of the OLED device of the present invention；
Fig. 5 is the schematic diagram of the step 4 of the production method of the OLED device of the present invention；
Fig. 6 is the schematic diagram of the step 5 of the production method of the OLED device of the present invention.
Specific implementation mode
Further to illustrate the technological means and its effect of the invention taken, below in conjunction with the preferred implementation of the present invention
Example and its attached drawing are described in detail.
Referring to Fig. 1, the present invention provides a kind of production method of OLED device, include the following steps：
Step S1, as shown in Fig. 2, providing underlay substrate 10,21 He of anode layer separately is formed on underlay substrate 10
Cathode contact layer 30.
Specifically, the underlay substrate 10 is glass substrate.
Specifically, in the step S1,10 μm -20 μm, and phase are separated by between the anode layer 21 and cathode contact layer 30
It does not connect mutually.
Specifically, the material of the anode layer 21 and cathode contact layer 30 is hydrophilic conductive material.
Step S2, as shown in figure 3, forming pixel defining layer on underlay substrate 10, anode layer 21 and cathode contact layer 30
40, the pixel defining layer 40 crosses pixel openings 41 on the anode layer 21 and is corresponded to above the cathode contact layer 30
Equipped with cathode contacts hole 45.
Specifically, the material of the pixel defining layer 40 is hydrophobic material.
Specifically, the cathode contact layer 30 is detached by pixel defining layer 40 with anode layer 21.
Step S3, as shown in figure 4, sequentially forming hole injection layer (Hole from the bottom to top on the anode layer 21
Inject Layer, HIL) 24, hole transmission layer (Hole Transport Layer, HTL) 25, luminescent layer (Emitting
Layer, EML) 26 and electron transfer layer (Electron Transport Layer, ETL) 27, the electron transfer layer 27 is from institute
It states and extends in pixel openings 41 in cathode contacts hole 45 and be in contact with the cathode contact layer 30.
Specifically, in the step S3, the electron transfer layer 27, which is made by evaporation material by vapour deposition method, to be formed.It needs
Illustrate, when practical application vapour deposition method makes OLED, due to technically cannot achieve the system of independent electron transfer layer 27
Standby, so cathode contact layer 30 subsequently can not directly be connected with cathode layer 23, cathode contacts aperture layer 30 cannot achieve work.
Specifically, the electron transfer layer 27 is arranged above anode layer 21 and cathode contact layer 30, and not by pixel
The separation of definition layer 40 is located at the electron transfer layer 27 in pixel openings 41 and the electron transfer layer in cathode contacts hole 45
27 are connected in pixel defining layer 40.
Specifically, in the step S3, the hole injection layer 24, hole transmission layer 25 and luminescent layer 26 are formed in described
In pixel openings 41；The pixel defining layer 40 is simultaneously by cathode contact layer 30 and hole injection layer 24, hole transmission layer 25, hair
Photosphere 26 detaches.
Specifically, in the step S3, steaming is respectively adopted in the hole injection layer 24, hole transmission layer 25 and luminescent layer 26
Plating method or ink-jet printing (Ink-jet Print, IJP), which make, to be formed.
Step S4, as shown in figure 5, forming cathode layer 23 on the electron transfer layer 27, the cathode layer 23 covers the moon
Cathode layer 23 is spaced apart by pole contact layer 30, the electron transfer layer 27 with cathode contact layer 30.
Specifically, the cathode layer 23 is located at picture higher than pixel defining layer 40 and not by the separation of pixel defining layer 40
41 top of element opening is connected with the cathode layer 23 of 45 top of cathode contacts hole above pixel defining layer 40, is whole face structure.
Step S5, as shown in fig. 6, applying the range of phase equipotential in 10V-30V to the anode layer 21 and cathode layer 23
Between voltage, while to cathode contact layer 30 apply potential be less than 23 potential of cathode layer range -20V-20V voltage,
Make to form the potential difference of a 10V-30V between cathode contact layer 30 and cathode layer 23 and be kept for -30 minutes 5 minutes, the electricity
Sub- transport layer 27 is breakdown and conductive under the action of electric field, to make the cathode layer 23 and cathode contact layer 30 conduct.
The production method of the OLED device of the present invention on underlay substrate 10 by being arranged and the moon of anode layer 21 separately
Pole contact layer 30, corresponding to the top of cathode contact layer 30 setting cathode contacts hole 45, manufacturing process in pixel defining layer 40
Middle electron transfer layer 27 extended to out of pixel openings 41 in cathode contacts hole 45 and will be between cathode layer 23 and cathode contact layer 30
It separates, before proper device operation, in order to make to be conducted between cathode contact layer 30 and cathode layer 23, to cathode layer 23 and sun
Pole layer 21 applies the positive voltage of phase equipotential, while applying a negative electricity for being less than 23 potential of cathode layer to cathode contact layer 30
Pressure, makes to form potential difference between cathode contact layer 30 and cathode layer, electron transfer layer 27 is breakdown under the action of electric field and leads
Electricity, to realize conducting for cathode layer 23 and cathode contact layer 30, to which made OLED device is shown applied to OLED
Panel and at work, applies positive voltage, applies respectively on cathode layer 23 and cathode contacts aperture layer 30 identical on anode layer 21
Negative voltage, cathode contacts aperture layer 30 directly can provide voltage and current compensation to cathode layer 23, due to the OLED devices of each pixel
It is equipped with cathode contact layer 30 on part to conduct with cathode layer 23, and then can prevent OLED display panel large area from IR occur
Brightness disproportionation problem caused by Drop.
In conclusion a kind of production method of OLED device provided by the invention, setting and anode layer on underlay substrate
Cathode contact layer separately made corresponding to the top of cathode contact layer setting cathode contacts hole in pixel defining layer
Electron transfer layer extends in cathode contacts hole out of pixel openings and is spaced apart cathode layer with cathode contact layer in journey, in device
Before part normal work, in order to make to be conducted between cathode contact layer and cathode layer, equal electricity is applied to cathode layer and anode layer
The positive voltage of gesture, while the voltage for being less than cathode layer potential is applied to cathode contact layer, make cathode contact layer and cathode layer
Between form potential difference, electron transfer layer is breakdown and conductive under the action of electric field, to realize cathode layer and cathode contacts
Layer conducts, and at work, cathode contacts aperture layer directly can provide voltage and current compensation to OLED device to cathode layer, in turn
Brightness disproportionation problem caused by capable of preventing OLED display panel large area from IR Drop occur.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology
Other various corresponding change and deformations are made in design, and all these change and distortions should all belong to the claims in the present invention
Protection domain.
Claims (10)
1. a kind of production method of OLED device, which is characterized in that include the following steps：
Underlay substrate (10) step S1, is provided, forms anode layer (21) and cathode contacts separately on underlay substrate (10)
Layer (30)；
Step S2, pixel defining layer (40) is formed on underlay substrate (10), anode layer (21) and cathode contact layer (30), it is described
Pixel defining layer (40) crosses pixel openings (41) and right above the cathode contact layer (30) on the anode layer (21)
Cathode contacts hole (45) should be equipped with；
Step S3, hole injection layer (24), hole transmission layer (25), hair are sequentially formed from the bottom to top on the anode layer (21)
Photosphere (26) and electron transfer layer (27), the electron transfer layer (27) extend to cathode contacts out of the pixel openings (41)
It is in contact in hole (45) and with the cathode contact layer (30)；
Step S4, cathode layer (23), cathode layer (23) the covered cathode contact layer are formed on the electron transfer layer (27)
(30), cathode layer (23) is spaced apart by the electron transfer layer (27) with cathode contact layer (30)；
Step S5, apply the voltage of phase equipotential to the anode layer (21) and cathode layer (23), while to cathode contact layer
(30) apply the voltage that potential is less than cathode layer (23) potential, make to form potential between cathode contact layer (30) and cathode layer (23)
Difference, the electron transfer layer (27) is breakdown and conductive under the action of electric field, to make the cathode layer (23) and cathode connect
Contact layer (30) conducts.
2. the production method of OLED device as described in claim 1, which is characterized in that in the step S5, the cathode connects
The potential difference formed between contact layer (30) and cathode layer (23) is 10V-30V.
3. the production method of OLED device as claimed in claim 2, which is characterized in that in the step S5, keep described the moon
There are the states -30 minutes 5 minutes of potential difference for pole contact layer (30) and cathode layer (23).
4. the production method of OLED device as claimed in claim 2, which is characterized in that in the step S5, to the anode
The voltage that layer (21) and cathode layer (23) apply is 10V-30V, is -20V- to the voltage that the cathode contact layer (30) applies
20V。
5. the production method of OLED device as described in claim 1, which is characterized in that in the step S3, the electronics passes
Defeated layer (27), which is made by evaporation material by vapour deposition method, to be formed.
6. the production method of OLED device as described in claim 1, which is characterized in that in the step S3, the hole note
Enter layer (24), hole transmission layer (25) and vapour deposition method is respectively adopted for luminescent layer (26) or ink-jet printing makes to be formed.
7. the production method of OLED device as described in claim 1, which is characterized in that the anode layer (21) and cathode contacts
The material of layer (30) is hydrophilic conductive material, and the material of the pixel defining layer (40) is hydrophobic material.
8. the production method of OLED device as described in claim 1, which is characterized in that in the step S3, the hole note
Enter layer (24), hole transmission layer (25) and luminescent layer (26) to be formed in the pixel openings (41).
9. the production method of OLED device as described in claim 1, which is characterized in that the cathode contact layer (30) passes through picture
It plain definition layer (40) while being detached with anode layer (21), hole injection layer (24), hole transmission layer (25), luminescent layer (26).
10. the production method of OLED device as described in claim 1, which is characterized in that in the step S1, the anode layer
(21) it is separated by 10 μm -20 μm between cathode contact layer (30).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810232021.4A CN108417738B (en) | 2018-03-20 | 2018-03-20 | Manufacturing method of OLED device |
| PCT/CN2019/070487 WO2019179216A1 (en) | 2018-03-20 | 2019-01-04 | Manufacturing method of oled device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810232021.4A CN108417738B (en) | 2018-03-20 | 2018-03-20 | Manufacturing method of OLED device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108417738A true CN108417738A (en) | 2018-08-17 |
| CN108417738B CN108417738B (en) | 2019-12-24 |
Family
ID=63132880
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810232021.4A Active CN108417738B (en) | 2018-03-20 | 2018-03-20 | Manufacturing method of OLED device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108417738B (en) |
| WO (1) | WO2019179216A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019179216A1 (en) * | 2018-03-20 | 2019-09-26 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of oled device |
| CN110635066A (en) * | 2019-09-26 | 2019-12-31 | 京东方科技集团股份有限公司 | Transparent display substrate, manufacturing method thereof and transparent display device |
| CN111129345A (en) * | 2019-12-19 | 2020-05-08 | 深圳市华星光电半导体显示技术有限公司 | Organic light emitting diode display device |
| WO2021088141A1 (en) * | 2019-11-08 | 2021-05-14 | 深圳市华星光电半导体显示技术有限公司 | Organic light emitting diode panel and manufacturing method therefor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104659063A (en) * | 2014-12-30 | 2015-05-27 | 京东方科技集团股份有限公司 | Display substrate, manufacture method thereof, display panel and mask plate |
| CN107221554A (en) * | 2017-06-08 | 2017-09-29 | 深圳市华星光电技术有限公司 | A kind of OLED and manufacture method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107785381B (en) * | 2017-10-13 | 2020-12-22 | 深圳市华星光电半导体显示技术有限公司 | OLED panel manufacturing method and OLED panel |
| CN108417726A (en) * | 2018-03-20 | 2018-08-17 | 深圳市华星光电半导体显示技术有限公司 | OLED device and preparation method thereof |
| CN108417738B (en) * | 2018-03-20 | 2019-12-24 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of OLED device |
-
2018
- 2018-03-20 CN CN201810232021.4A patent/CN108417738B/en active Active
-
2019
- 2019-01-04 WO PCT/CN2019/070487 patent/WO2019179216A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104659063A (en) * | 2014-12-30 | 2015-05-27 | 京东方科技集团股份有限公司 | Display substrate, manufacture method thereof, display panel and mask plate |
| CN107221554A (en) * | 2017-06-08 | 2017-09-29 | 深圳市华星光电技术有限公司 | A kind of OLED and manufacture method |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019179216A1 (en) * | 2018-03-20 | 2019-09-26 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of oled device |
| CN110635066A (en) * | 2019-09-26 | 2019-12-31 | 京东方科技集团股份有限公司 | Transparent display substrate, manufacturing method thereof and transparent display device |
| US11342530B2 (en) | 2019-09-26 | 2022-05-24 | Boe Technology Group Co., Ltd. | Transparent display substrate and manufacturing method thereof, transparent display device |
| WO2021088141A1 (en) * | 2019-11-08 | 2021-05-14 | 深圳市华星光电半导体显示技术有限公司 | Organic light emitting diode panel and manufacturing method therefor |
| CN111129345A (en) * | 2019-12-19 | 2020-05-08 | 深圳市华星光电半导体显示技术有限公司 | Organic light emitting diode display device |
| WO2021120273A1 (en) * | 2019-12-19 | 2021-06-24 | 深圳市华星光电半导体显示技术有限公司 | Organic light-emitting diode display device |
| US11387424B2 (en) | 2019-12-19 | 2022-07-12 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Organic light emitting diode display device with cathode layer |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019179216A1 (en) | 2019-09-26 |
| CN108417738B (en) | 2019-12-24 |
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