CN108408685A - A kind of ultrasonic vibration etching device and nanoprocessing system - Google Patents
A kind of ultrasonic vibration etching device and nanoprocessing system Download PDFInfo
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- CN108408685A CN108408685A CN201810113284.3A CN201810113284A CN108408685A CN 108408685 A CN108408685 A CN 108408685A CN 201810113284 A CN201810113284 A CN 201810113284A CN 108408685 A CN108408685 A CN 108408685A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0004—Apparatus specially adapted for the manufacture or treatment of nanostructural devices or systems or methods for manufacturing the same
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Abstract
The present invention relates to nano material processing technique fields, and in particular to a kind of ultrasonic vibration etching device and nanoprocessing system.It includes pedestal, cylinder, actuating mechanism and cantilever units that ultrasonic vibration, which etches device, the cylinder is vertically arranged on the base, the top on the cylinder top is arranged in the cantilever units, and the cantilever units are for being processed the workpiece for being placed on the cylinder top；The actuating mechanism is connected with the cylinder, and the movement for controlling the cantilever units simultaneously generates ultrasonic activation.Nanoprocessing system includes：Ultrasonic vibration etches device, AFM scan module, signal access module and data collection processor.Advantageous effect：The present invention have at high speed, adjustable feature, Dimension correction flexibility, control line width ability and for high efficient production complex pattern it is highly effective.In process, the present invention significantly reduces the uniformity of the machining features such as influence, pattern to groove.
Description
Technical field
The present invention relates to nano material processing technique fields, and in particular to a kind of ultrasonic vibration etching device and nanoprocessing system
System.
Background technology
Nanofabrication technique be widely used in field-effect transistor, quantum dot, nano wire, grating, nano electromechanical systems and
The manufacturing fields such as semiconductor integrated circuit.Scanning probe nano processing technology is that a kind of utilize scans probe in the upper figure of nanoscale
The lithographic process of case material, compared with other nanofabrication techniques, it is high that scanning probe etching is undoubtedly a kind of low cost
The method of quality, it can bypass diffraction limit, reach 10nm resolution ratio below；Can be achieved control on atomic scale with it is anti-
Feedback.Nanoprocessing (TBN) based on tip is to scan one of the scheme of rapid growth in probe nano processing technology, it is with physics
Based on probe, sample surface is performed etching using thermal field, mechanical field or electric field.Currently, the nanoprocessing based on tip
Main method has directly mechanical scraping, atom removal method, leaching nanolithographic method, heat chemistry nanolithography, electrochemistry
Method and Flied emission method etc..The pattern that precision is less than 50nm can successfully be made.
However, directly machinery scraping is restricted in manufacturing speed and aspect of performance.It is generally desirable to larger normal direction
Tip is pushed into sample surfaces by power and adamantine cantilever.Big normal force causes big frictional force and potential tip to be ground
Damage, this can influence the service life of the cantilever tip used in nanometer manufacture.In direct machinery scrapes, sharp tip and sample it
Between engagement be difficult to control.Larger interaction force limits the maximum processing speed of this method between cantilever tip and sample
Degree.
There are also researchers to use the method vibrated based on tip, as dynamic plow etches.But it in this approach, hangs
Arm vibrates near its resonant frequency, this makes the operation of dynamic plow etching and control considerably complicated.It is strong between tip-sample
Big interaction force limits the adjusting to process.Near the resonant frequency of cantilever, the behavior of oscillating cantilevered beam is to control
The tip-sample gap of system processed and setting power are very sensitive, can influence the uniformity of the machining features such as groove, pattern.
In addition to above-mentioned insufficient outer, most of other nanoprocessings based on AFM there is a further problem, be just a lack of pair
The flexible modification ability of machining feature size.Different from electron beam lithography, machinery scrapes and the line width of plow mainly depends on
In AFM tip size, the ability for controlling line width on demand is extremely important for high efficient production complex pattern.
Current various nanoprocessing methods are faced with common problem urgently to be resolved hurrily, that is, are provided simultaneously with high speed, are adjusted
With Dimension correction flexibility.Therefore, existing processing technology needs to improve and develop.
Invention content
The purpose of the present invention is to solve the above problem, a kind of ultrasonic vibration etching device and nanoprocessing system are provided
System, the adjustable ultrasonic wave of high speed based on atomic force microscope.The vibration etching device of the present invention can lead to during high speed operation
Working depth and width are overregulated, the controllability of manufacturing process is increased, improves material removal rate, to be received to reduce manufacture
The cost of rice structure.
In order to reach foregoing invention purpose, the present invention uses following technical scheme：
A kind of ultrasonic vibration etching device, including pedestal, cylinder, actuating mechanism and cantilever units, the cylinder are vertically arranged
On the base, the cantilever units are arranged in the top on the cylinder top, and the cantilever units are used for being placed on
The workpiece for stating cylinder top is processed；The actuating mechanism is connected with the cylinder, the shifting for controlling the cantilever units
It moves and generates ultrasonic activation.
Preferably, the actuating mechanism includes mutually matched X to piezoelectric actuator, Y-direction piezoelectric actuator and Z-direction piezoelectricity
Actuator；X is set to the surface of the pedestal to piezoelectric actuator and Y-direction piezoelectric actuator mutual vertically, and the X is to pressure
One end of electric actuator and one end of Y-direction piezoelectric actuator are connect with the bottom of the cylinder；The Z-direction piezoelectric actuator is set
It is placed in the top of the cylinder and corresponding with the cantilever units.
Preferably, the cantilever units include AFM cantilevers and thermal station fixture, and the thermal station fixture is arranged in the cylinder
Top, the end of the thermal station fixture are connect with the AFM cantilevers, and AFM cantilevers are opposite with the cylinder top.
Preferably, the thermal station fixture include two intermediate plates and a fixed frame, the AFM cantilevers by two intermediate plates into
Row is fixed.
Preferably, the intermediate plate includes cold arm and hot arm, and the cold arm and hot arm are in process because temperature change is produced
Raw deflection.In process because the maximum deflection distance that temperature change generates deflection is 23 μm, it is 1GPa that maximum, which bears pressure,.
Preferably, the length of the hot arm is 500um.
Preferably, further include the function waveform generator being connect with the Z-direction piezoelectric actuator, for coordinating the Z
The hypervelocity wave vibration of Z-direction is formed to piezoelectric actuator, and generates pumping signal to trigger cantilever units movement.The cylinder top
End is connected equipped with Z-direction piezoelectric actuator with the function waveform generator, provides megasonic vibration in z-direction
A kind of nanoprocessing system, including ultrasonic vibration described in any one of the above embodiments etch device, further include：AFM scan mould
Block, signal access module and data collection processor；The AFM scan module is connect with ultrasonic vibration etching device, is used for
Acquire the real time data in ultrasonic vibration etching device process；The signal access module and the AFM scan module and institute
Data collection processor connection is stated, the real time data for acquiring the AFM scan module is transferred at the data acquisition
Manage device；The data collection processor is connect with ultrasonic vibration etching device, and mould is accessed for receiving and processing the signal
The real time data that block is sent, and corresponding control instruction is sent to ultrasonic vibration etching device according to handling result, it is described super
Acoustic vibration etches device and adjusts machined parameters according to the control instruction.
Preferably, the signal access module is for obtaining the vertical and lateral defection signal of cantilever units.
Preferably, the data collection processor be used for the ultrasonic vibration etching device send X to and Y-direction vibration
Drive signal, for controlling the output signal in process, feedback signal acquires and baseband signal is handled and signal is sent out
Send and cut the acquisition of force data.
Compared with prior art, the present invention advantageous effect is：Ultrasonic vibration through the invention etches device, solves general
Process equipment scraped by directly machinery, so that engagement between sharp tip and sample is difficult to control, and because existing
The problem of larger interaction force limits maximum process velocity.Ultrasonic vibration etching device through the invention and nanoprocessing
System can make product processing be provided simultaneously with high speed, adjustable feature, Dimension correction flexibility, in the ability of control line width
And it is highly effective for high efficient production complex pattern.In process, the present invention significantly reduces the shadow to groove
The uniformity of the machining features such as sound, pattern.
Description of the drawings
Fig. 1 is the structural schematic diagram of the ultrasonic vibration etching device of the present invention；
Fig. 2 is the cantilever cell structure schematic diagram of the present invention；
Fig. 3 is the clamping piece structure schematic diagram of the present invention；
Fig. 4 (a) is the etching operation principle schematic diagram of the present invention；
Fig. 4 (b) is the schematic diagram that the AFM cantilevers of the present invention follow sample to vibrate；
Fig. 4 (c) is the AFM cantilever tips of the present invention in periodic contact phase and is detached from phase schematic diagram；
Fig. 5 is the adjustable ultrasonic wave nanoprocessing system structure diagram of the high speed based on atomic force microscope of the present invention；
Fig. 6 is the adjustable ultrasonic wave nanolithographic flow process chart of the high speed based on atomic force microscope of the present invention.
In figure：
1 pedestal
2 cylinders
3 actuating mechanisms
31 X are to piezoelectric actuator
32 Y-direction piezoelectric actuators
33 Z-direction piezoelectric actuators
4 cantilever units
41 AFM cantilevers
42 thermal station fixtures
421 intermediate plates
4211 hot arm
4212 cold arm
422 fixed frames
5 AFM scan modules
6 signal access modules
7 data collection processors
Specific implementation mode
Explanation is further described to technical scheme of the present invention below by specific embodiment.
If without specified otherwise, the raw material employed in the embodiment of the present invention is raw material commonly used in the art, is implemented
Method employed in example, is the conventional method of this field.
The present embodiment is as shown in Figure 1：A kind of ultrasonic vibration etching device, including pedestal 1, cylinder 2, actuating mechanism 3 and cantilever
Unit 4, the cylinder 2 are vertically arranged in the centre position of the pedestal 1, and the cantilever units 4 are arranged on 2 top of the cylinder
Top, the cantilever units 4 are for being processed the workpiece for being placed on 2 top of the cylinder；The actuating mechanism 3 and institute
It states cylinder 2 to be connected, the movement for controlling the cantilever units 4, and generates ultrasonic activation.
The pedestal 1 is made of aluminium, can withstand greater than the vibration of 10KHz, and cylinder 2 is located at stage body center, 2 size of cylinder
For 6mm × 6mm × 15mm, with the circular vibration range on the faces specification XY.The ultrasonic vibration etching device is enterprising in PMMA masks
Row vibration aided nano processing, first toasts PMMA spin coatings on a silicon substrate and on electric hot plate, and PMMA is that thermoplasticity synthesis is poly-
Object is closed, Young's modulus and modulus of shearing are respectively 1800-3100Mpa and 1700Mpa.
The actuating mechanism 3 includes that mutually matched X is caused to piezoelectric actuator 31, Y-direction piezoelectric actuator 32 and Z-direction piezoelectricity
Dynamic device 33；X is set to the surface of the pedestal 1 to piezoelectric actuator 31 and Y-direction piezoelectric actuator 32 mutual vertically, and described
X is connect with the bottom of the cylinder 2 to one end of piezoelectric actuator 31 and one end of Y-direction piezoelectric actuator 32；The Z-direction pressure
Electric actuator 33 is set to the top of the cylinder 2 and corresponding with the cantilever units 4.The present embodiment further includes and the Z
The function waveform generator (being not shown on figure) connected to piezoelectric actuator 33, for coordinating 33 shape of Z-direction piezoelectric actuator
It is vibrated at the hypervelocity wave of Z-direction, and generates pumping signal and moved to trigger cantilever units 4.
Three piezoelectric actuators generate the nonlinear area of pumping signal triggering cantilever entrance power-distance Curve, to produce
Raw cutting force；The silicon wafer sample application of surface coating PMMA is placed on the top of Z-direction piezoelectric actuator 33, by cantilever units 4
On AFM cantilevers 41 be processed.
As shown in Figure 2 and Figure 3：The cantilever units 4 include AFM cantilevers 41 and thermal station fixture 42, and the thermal station fixture 42 is set
It sets in the top of the cylinder 2, the end of the thermal station fixture 42 is connect with the AFM cantilevers 41, AFM cantilevers 41 and the column
2 top of body is opposite.The AFM cantilevers 41 used are DLC190, tip radius about 30nm.Thermal station fixture 42 is made of polysilicon, Gu
It is scheduled on 2 top of the cylinder.The intermediate plate 421 of the end of thermal station fixture 42 is connected with the tip (point of a knife) of AFM cantilevers 41.Thermal station is pressed from both sides
Tool 42 further includes thermal actuator, and during the work time, the actuator amount of deflection of each thermal actuator in clamping process is 20um.
AFM cantilevers 41 are imaged using tapping pattern in workpiece surface.The Z-direction piezoelectricity that device is etched by the ultrasonic vibration causes
Dynamic device 33 generates non-linear force-distance effect between sample and the tip of AFM cantilevers 41 and forms ultrasonic vibration, and then generates
Ultrasonic wave to adjust working depth, and reduces friction；Meanwhile because X to piezoelectric actuator 31 and Y-direction piezoelectric actuator 32 in AFM
High frequency circular vibration is generated between the tip and sample of cantilever 41 to control working width, and improves the speed of processing.Cantilever exists
Workpiece surface is processed with circular vibration pattern.The outer rim of circular path is the Virtual tool with single cutting tooth, is passed through
It cuts off rapidoprint.Wherein the diameter of Virtual tool is controlled by the round amplitude on X/Y plane, and the rotation of Virtual tool is logical
It crosses tip circular motion to realize, virtual tangent line of effective cutting edge between Virtual tool and sample.
The thermal station fixture 42 includes that upper and lower two intermediate plates 421 and a fixed frame 422, intermediate plate 421 are fabricated from a silicon.
The AFM cantilevers 41 are fixed by two intermediate plates 421.The intermediate plate 421 includes cold arm 4212 and hot arm 4211, described cold
Arm 4212 and hot arm 4211 are in process because temperature change generates deflection.In the present embodiment, the length L=of hot arm 4211
500um, the deflection x=30um needed for intermediate plate 421.
The present invention is tested by the sagging effect in tip to AFM cantilevers 41.For 20 microns of torque arms, in Young
Modulus is 300Gpa, under conditions of yield strength is 7Gpa, if silicon density is 2.02g/cm3, load 2.02e-5N/mm3, most
Big sagging displacement is 18nm；If truss structure changes, silicon density is 1.165g/cm3, load 1.165e-5N/mm3It is maximum sagging
Displacement is 10nm.Thus it can reflect that the material of the invention used and system setting are appropriate.
Ultrasound is formed as shown in Fig. 4 (a), when work, between sample and cantilever tip because of non-linear force-distance effect to shake
It is dynamic, and then ultrasonic wave is generated, to adjust working depth, and reduce friction；Meanwhile it is round that high frequency is introduced between point of a knife and sample
Vibration improves the speed of etching to control working width.
When cantilever tip is contacted with vibration sample surface, AFM probe scanner detects the ultrasound in Z-direction between the two
Wave power.As shown in Fig. 4 (b), when sample and cantilever contacts and to be less than cantilever beam resonant frequency fr (f<Fr frequency f vibrations)
When, cantilever beam will follow sample to vibrate；When vibration frequency is far above cantilever beam resonant frequency (f>>When fr), cantilever beam is because of inertia
It acts on and can not continue that sample is followed to vibrate, end is pressed into sample surface immediately.Work as amplitude A>When Zc, wherein Zc is the first of cantilever
Beginning amount of deflection is vibrated at one on circumference, and contact is in contact mutually and is detached from phase.As shown in Fig. 4 (c), work as amplitude A>(Zc is when Zc
Cantilever initial deflection), contact is in periodic contact phase and is detached from phase.
As shown in figure 5, the present invention also provides a kind of nanometers of the adjustable ultrasonic wave of the high speed based on atomic force microscope to add
Work system, including the ultrasonic vibration etch device, further include：At AFM scan module 5, signal access module 6 and data acquisition
Manage device 7.The AFM scan module 5 is connect with ultrasonic vibration etching device, and device process is etched for acquiring ultrasonic vibration
In real time data, AFM scan module described in the present embodiment 5 be AFM probe scanner.The signal access module 6 and institute
It states AFM scan module 5 and the data collection processor 7 connects, the real time data for acquiring the AFM scan module 5
It is transferred to the data collection processor 7；The data collection processor 7 is connect with ultrasonic vibration etching device, and data are adopted
Set processor 7 is used to receive and process the real time data of the transmission of the signal access module 6, and is surpassed to described according to handling result
Acoustic vibration etches device and sends corresponding control instruction, and the ultrasonic vibration etching device adjusts processing ginseng according to the control instruction
Number.
The data collection processor 7 is used for the processing data under labVIEW environment, and generates 90 ° of phase differences
Two sine wave signals.The ultrasonic vibration etching device is used for the control instruction of the output according to the data collection processor 7
The voltage adjusting Oscillation Amplitude of three piezoelectric actuators of control, and then control AFM cantilevers 41 and deflect, adjustment etching depth and width
Degree.
Specifically, the X is connected with data collection processor 7 to piezoelectric actuator 31, Y-direction piezoelectric actuator 32, by
The command signal that data collection processor 7 is sent out is piezoelectric actuated to piezoelectric actuator 31, Y-direction by reaching X after power amplifier
Device 32 forms vibration and displacement on 2 top of cylinder.X receives command voltage to piezoelectric actuator 31 and Y-direction piezoelectric actuator 32,
The whirling vibration in X/Y plane is provided by the actuating power of generation, forms vibration and displacement on 2 top of cylinder, displacement range is in Asia
Nanometer arrives between several microns.
Z-direction piezoelectric actuator 33 is connect with function waveform generator, the finger sent out by receiving data collection processor 7
It enables, forms the ultrasonic activation of Z-direction, generate pumping signal to trigger the inelastic region of 41 entrance powers of AFM cantilevers-distance Curve
Domain；Ultrasonic vibration etching device pedestal 1 is tightened on AFM probe scanner, acquires process data by AFM probe scanner, and pass
It leads to data collection processor 7, to control process.Ultrasonic vibration etches silicon wafer of the device to spin coating PMMA masks
Piece carries out photoelectric elements, and adjusts machining feature and speed in real time by receiving the instruction that data collection processor 7 is sent out.
The signal access module 6 is additionally operable to obtain the vertical and lateral defection signal of cantilever units 4.When AFM cantilevers 41
When being bent in vertical direction, the pattern of workpiece surface is measured as A-B signals by photodetector；Reflect AFM tip and workpiece
The twist motion of the AFM cantilevers 41 to rub between surface is measured as C-D signals.It is related to when the ultrasonic vibration etching device work
The vertically and laterally movement of AFM cantilevers 41, therefore the signal access module 6 acquires A-B and C-D voltage signals simultaneously.
The data collection processor 7 be used for the ultrasonic vibration etching device send X to and Y-direction vibratory drive letter
Number, for controlling the output signal in process, feedback signal acquires and baseband signal is handled and signal sends and cuts
Cut the acquisition of force data.
The data collection processor 7 generates the directions the XY vibration drive signal of the ultrasonic vibration etching device.It includes 4
A simulation output and 16 analog input channels, sample rate may be set to 1.25MS/s, and to the output signal in process
Control, feedback signal acquisition and baseband signal processing.Add in the adjustable ultrasonic wave nanometer of the high speed based on atomic force microscope
In work system, force data acquisition occurs and is cut for signal for the data collection processor 7.Analog output channel 1 generates
The command signal of 2kHz drives y-axis, the command signal that analog output channel 2 generates 2kHz to drive X axis vibration, the two phase difference
It is 90 °.
The etching process of the present invention is done circular vibration on the silicon wafer of spin coating PMMA masks by cantilever tip and is realized.
The directions XY piezoelectric actuator control processing width, Z actuators control tip pressure with lift, control the depth of processing.
As shown in fig. 6, the corresponding stream of the adjustable ultrasonic wave nanoprocessing equipment of the high speed based on atomic force microscope
Journey specifically includes following steps：
Step S1, silicon wafer is handled, including cleaning, dehydration, al deposition, spin coating PMMA film etc.；
Step S2, set point power, feed speed, working depth and width are pressed to vertical direction from data collection processor 7
On two piezoelectric actuators send 90 ° of phase differences sinusoidal signal；
Step S3, after the Z-type actuator in vertical direction receives the instruction that data collection processor 7 is sent out, in sample
Non-linear force-distance effect is generated between cantilever tip and forms ultrasonic vibration, the indentation of control tip or disengaging silicon wafer table
Face；
Step S4, X receives the instruction that data collection processor 7 is sent out to piezoelectric actuator 31 and Y-direction piezoelectric actuator 32
Afterwards, the circular vibration in X/Y plane is generated, and this high frequency circular vibration is loaded on silicon wafer；In each swing circle,
Only Virtual tool and the micro-thin materials of the tangent part of sample is removed；
Step S5, A-B the and C-D data in process are collected by AFM probe scanner, by signal access module 6
It is transmitted to data collection processor 7, and is handled under LabVIEW environment, and feedback adjustment data are instructed by piezoelectricity and are transmitted
It gives XYZ tri- piezoelectric actuators, controls the deflection of cantilever, realize the adjustment to width and depth.
Step S6, it completes after being imaged in PMMA film, sample is placed in O2PMMA etchings are carried out in plasma (PM-600),
Sample is immersed in aluminium etching agent again, pattern is enabled to be transferred on aluminium layer from PMMA film, then uses deionized water and nitrogen to dry up, most
Cleaning imaging afterwards.
It should be understood that the application of the present invention is not limited to the above, it will be understood by those skilled in the art that can root
It is improved or converted according to above description, it is all these to improve or convert the protection model that all belong to claim of the present invention
It encloses.
Claims (10)
1. a kind of ultrasonic vibration etches device, which is characterized in that including pedestal, cylinder, actuating mechanism and cantilever units, the cylinder
It is vertically arranged on the base, the top on the cylinder top is arranged in the cantilever units；The actuating mechanism with it is described
Cylinder is connected, the movement for controlling the cantilever units, and generates ultrasonic activation.
2. ultrasonic vibration according to claim 1 etches device, which is characterized in that the actuating mechanism includes mutually matched
X is to piezoelectric actuator, Y-direction piezoelectric actuator and Z-direction piezoelectric actuator；X mutually hangs down to piezoelectric actuator and Y-direction piezoelectric actuator
Directly be set to the surface of the pedestal, and the X to one end of piezoelectric actuator and one end of Y-direction piezoelectric actuator and institute
State the bottom connection of cylinder；The Z-direction piezoelectric actuator is set to the top of the cylinder and corresponding with the cantilever units.
3. ultrasonic vibration according to claim 1 or 2 etches device, which is characterized in that the cantilever units include AFM cantilevers
With thermal station fixture, the thermal station fixture is arranged in the top of the cylinder, and the end of the thermal station fixture connects with the AFM cantilevers
It connects, AFM cantilevers are opposite with the cylinder top.
4. ultrasonic vibration according to claim 3 etches device, which is characterized in that the thermal station fixture include two intermediate plates and
One fixed frame, the AFM cantilevers are fixed by two intermediate plates.
5. ultrasonic vibration according to claim 4 etches device, which is characterized in that the intermediate plate includes cold arm and hot arm, institute
Cold arm and hot arm are stated in process because temperature change generates deflection.
6. ultrasonic vibration according to claim 5 etches device, which is characterized in that the length of the hot arm is 500um.
7. ultrasonic vibration according to claim 2 etches device, which is characterized in that further include and the Z-direction piezoelectric actuator
The function waveform generator of connection for coordinating the Z-direction piezoelectric actuator to form the hypervelocity wave vibration of Z-direction, and generates and swashs
Signal is encouraged to trigger cantilever units movement.
8. a kind of nanoprocessing system, which is characterized in that including claim 1-7 any one of them ultrasonic vibrations etching device,
AFM scan module, signal access module and data collection processor；
The AFM scan module is connect with ultrasonic vibration etching device, for acquiring in ultrasonic vibration etching device process
Real time data；
The signal access module is connect with the AFM scan module and the data collection processor, for sweeping the AFM
The real time data for retouching module acquisition is transferred to the data collection processor；
The data collection processor is connect with ultrasonic vibration etching device, for receiving and processing the signal access module
The real time data of transmission, and corresponding control instruction, the ultrasound are sent to ultrasonic vibration etching device according to handling result
Vibration etching device adjusts machined parameters according to the control instruction.
9. nanoprocessing system according to claim 8, which is characterized in that the signal access module is for obtaining cantilever
The vertical and lateral defection signal of unit.
10. nanoprocessing system according to claim 8, which is characterized in that the data collection processor is used for institute
State ultrasonic vibration etching device send X to and Y-direction vibration drive signal, and for the output signal control in process
System, feedback signal acquisition and baseband signal processing and signal are sent and the acquisition of cutting force data.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111215310A (en) * | 2020-01-13 | 2020-06-02 | 杭州电子科技大学 | Multi-gear ultrasonic generation control acquisition electric appliance cabinet |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060150719A1 (en) * | 2002-08-16 | 2006-07-13 | Michael Reinstadtler | Method for determining tribological properties of a sample surface using a scanning microscope (sem) and associated scanning microscope |
| CN103991839A (en) * | 2014-05-19 | 2014-08-20 | 中国矿业大学 | Method for preparing micro-nano textures through ultrasonic vibration |
| CN104155477A (en) * | 2014-08-13 | 2014-11-19 | 中国科学院电工研究所 | Method of tracking atomic force acoustical microscopy probe contact resonant frequency |
| CN106825547A (en) * | 2017-03-08 | 2017-06-13 | 哈尔滨工业大学 | The method of the increasing material manufacturing metal polyporous material of selective laser melting metal micro-nano hybrid particles solution under air ambient |
| CN107188116A (en) * | 2016-03-14 | 2017-09-22 | 中国科学院沈阳自动化研究所 | A kind of ultrasonic AFM closed loops nanometer processing device and method based on phase feedback |
| CN107192857A (en) * | 2016-03-14 | 2017-09-22 | 中国科学院沈阳自动化研究所 | A kind of nano film thickness detection means and its method based on ultrasonic AFM |
-
2018
- 2018-02-05 CN CN201810113284.3A patent/CN108408685B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060150719A1 (en) * | 2002-08-16 | 2006-07-13 | Michael Reinstadtler | Method for determining tribological properties of a sample surface using a scanning microscope (sem) and associated scanning microscope |
| CN103991839A (en) * | 2014-05-19 | 2014-08-20 | 中国矿业大学 | Method for preparing micro-nano textures through ultrasonic vibration |
| CN104155477A (en) * | 2014-08-13 | 2014-11-19 | 中国科学院电工研究所 | Method of tracking atomic force acoustical microscopy probe contact resonant frequency |
| CN107188116A (en) * | 2016-03-14 | 2017-09-22 | 中国科学院沈阳自动化研究所 | A kind of ultrasonic AFM closed loops nanometer processing device and method based on phase feedback |
| CN107192857A (en) * | 2016-03-14 | 2017-09-22 | 中国科学院沈阳自动化研究所 | A kind of nano film thickness detection means and its method based on ultrasonic AFM |
| CN106825547A (en) * | 2017-03-08 | 2017-06-13 | 哈尔滨工业大学 | The method of the increasing material manufacturing metal polyporous material of selective laser melting metal micro-nano hybrid particles solution under air ambient |
Non-Patent Citations (2)
| Title |
|---|
| LI ZHANG等: "High-rate tunable ultrasonic force regulated nanomachining lithography with an atomic force microscope", 《NANOTECHNOLOGY》 * |
| LI ZHANG等: "Material-insensitive feature depth control and machining force reduction by ultrasonic vibration in AFM-based nanomachining", 《IEEE TRANSACTIONS ON NANOTECHNOLOGY》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111215310A (en) * | 2020-01-13 | 2020-06-02 | 杭州电子科技大学 | Multi-gear ultrasonic generation control acquisition electric appliance cabinet |
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