CN107192857A - A kind of nano film thickness detection means and its method based on ultrasonic AFM - Google Patents
A kind of nano film thickness detection means and its method based on ultrasonic AFM Download PDFInfo
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- CN107192857A CN107192857A CN201610143693.9A CN201610143693A CN107192857A CN 107192857 A CN107192857 A CN 107192857A CN 201610143693 A CN201610143693 A CN 201610143693A CN 107192857 A CN107192857 A CN 107192857A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
Abstract
The present invention relates to a kind of nano film thickness detection means and its method based on ultrasonic AFM, including AFM system：For controlling the three-dimensional relative movement of probe and nano thin-film under nanoscale；Ultrasonic wave added system：For applying ultrasonic vibration to nano thin-film；Phase detection：For realizing that the interface and nano film thickness of the nano thin-film detected based on probe vibration phase and substrate are detected.Detection method：The ultrasonic vibration of lock-in amplifier detection process middle probe and the phase difference of ultrasound drive signals, working depth information is obtained by AFM imagings again, so as to obtain depth-phase difference curve according to the spatial correspondence of phase difference and working depth, the flex point occurred according to the curve can detect the interface and film thickness for receiving and paying out out meter film and substrate.The present invention can detect the change of material mechanical characteristic, and then be capable of detecting when nano thin-film and its substrate interface face, so that it is determined that film thickness.
Description
Technical field
It is specifically a kind of to be based on ultrasonic wave added the present invention relates to a kind of detection technique of new nano film thickness
The detection means and method of the novel nano thin film testing pattern-phase detection mode of AFM (AFM) technology.Mainly
For the field for needing nano film thickness to detect, including the every field such as material, life science.
Background technology
Development of the nano thin-film to nanometer technology is particularly significant.In field of novel, receiving by representative of two-dimensional material
Rice film, which is expected to substitution silica-base material, turns into new basic electronic material.However, most two-dimension nano materials are needed in spy
Competence exertion goes out its excellent electricity, magnetics, optics or mechanical property in the state of determining thickness.The graphene of such as individual layer is
Therefore most thin, maximum intensity, electrical and thermal conductivity performance a kind of most strong novel nano-material, its finder also obtain the prize of promise shellfish.
The nano film material of molybdenum disulfide, its different atom number of plies can influence the property of its specific manifestation, therefore change its thickness,
The electronic device with different electronic properties, transport property and magnetic property can just be produced.Manufacture and lead in nanoprocessing
Domain, polymer nanocomposite film is the resist (resist) of a variety of important process technologies, such as ultraviolet photoresist
(Photoresist), electron beam resist (electron sensitive resist) (E-beam resist), special process be with photoresist
(Special manufacture/experimental sample) etc..Processing to photoresist is nanoprocessing and manufacture
The first step, is also a step the most costly and time-consuming.Then, most of process technology to nano thin-film is required for determining first
The thickness of nano thin-film, specific cutting then could be carried out for different thickness and waits operation with graphical.
The nano thin-film of mass production can control the thickness of film by control parameter in the fabrication process, still
For laboratory is homemade or manufacturing environment of special nano thin-film, film thickness is often uncertain.So for receiving
The detection of rice film thickness is very important.Traditional method generally carries out nano thin-film longitudinally cutting, recycling electronics
Microscopy carries out nano level imaging to the cross section of nano thin-film, to obtain the thickness of nano thin-film.At present, atomic force
Microscope (atomic force microscope:AFM it is) to carry out nanometer under atomic scale using Scanning probe technique to add
The new technique of work, manufacture and imaging, the characteristics of its is maximum is that flexibility height, good controllability, simple operation, cost are low, can be with
Realize the high-resolution imaging in vacuum, gas and liquid environment and operation.But tradition AFM can only be to the surface shape of sample
Looks are detected, it is impossible to the thickness for detecting complete nano thin-film.Conventional method using metal needle point to film sample gently
The nano film material that ground is depicted in a groove, groove is stripped, therefore detects that gash depth is nanometer thin using AFM
The thickness of film.But, the power of this delineation is very difficult to control, and power crosses conference and is inscribed into substrate, is caused depth to be more than and is received
The thickness of rice film；Power is too small to owe delineation, cause gash depth to be less than the thickness of nano thin-film.But these methods are to damage
, the thorough destruction of nano thin-film can be caused, therefore the measure of thickness can not be also carried out for each nano thin-film.Especially
Two-dimensional nano-film material is, it is necessary to a kind of thickness measurement technique that can be harmless to sample, in situ.
The content of the invention
In order to solve the above-mentioned thickness measurement technique difficult point harmless, in situ for unknown thickness nano thin-film, the present invention
Propose a kind of novel nano film thickness detection pattern based on ultrasonic wave added AFM (AFM) technology-phase inspection
The detection means and method of survey pattern.
The technical solution adopted by the present invention is as follows：A kind of nano film thickness detection means based on ultrasonic AFM, including：
AFM system and connected ultrasonic wave added system, phase detection, the ultrasonic wave added system and phase detection
Connection；
AFM system：For controlling the three-dimensional relative movement of probe and nano thin-film under nanoscale, and in real time by probe
Cantilever beam defection signal export to phase detection；
Ultrasonic wave added system：Examined for applying ultrasonic vibration to nano thin-film, and ultrasound drive signals being sent to phase
Examining system；
Phase detection：For obtaining probe vibration phase according to the cantilever beam defection signal of ultrasound drive signals and probe
Potential difference, realizes the detection of nano film thickness.
The AFM system includes AFM controller, photoelectric sensor, Z-direction nanometer piezoelectric ceramics, probe and XY nanometer positionings
Platform；The input of the AFM controller is connected with photoelectric sensor, control end and Z-direction nanometer piezoelectric ceramics, XY nanometer positionings
Platform, phase detection connection, Z-direction nanometer piezoelectric ceramics are fixed on above XY nanopositioning stages with probe, photoelectric sensing
Device is fixed on above probe, for receiving the laser from probe backside reflection, and by the cantilever beam defection signal of probe export to
Phase detection.
The ultrasonic wave added system includes ultrasonic drivers and connected ultrasonic vibrator；The ultrasonic drivers
Ultrasonic signal is sent to ultrasonic vibrator, phase detection；The ultrasonic vibrator is fixed on XY nanopositioning stages, is surpassed
Sonic vibrator is provided with the nano thin-film in substrate.
The phase detection includes lock-in amplifier, human-computer interaction interface；The input of the lock-in amplifier, ginseng
Examine input to be connected with photoelectric sensor and ultrasonic drivers respectively, phase difference output end and man-machine interaction circle of lock-in amplifier
Face is connected, and the control end of human-computer interaction interface and AFM controller is connected.
A kind of nano film thickness detection method based on ultrasonic AFM, comprises the following steps：
1) ultrasonic drivers driving ultrasonic vibrator produces ultrasonic vibration, and drives substrate and nano thin-film to realize that ultrasound is shaken
It is dynamic；
2) AFM controller by control Z-direction nanometer piezoelectric ceramics drive probe moved along a straight line to nano thin-film, probe with
Nano thin-film starts processing when contacting, control XY nanopositioning stages are moved with uniform velocity with direction initialization, the ultrasound of nano thin-film
Vibration passes to probe, after photoelectric sensor is detected, sends the cantilever beam defection signal of probe to lock-in amplifier；
3) ultrasound drive signals of ultrasonic drivers are inputted to lock-in amplifier, and lock-in amplifier will be used as reference signal
The phase difference of ultrasound drive signals and cantilever beam defection signal, which is exported to human-computer interaction interface, show and store in real time；
4) while being processed, the processing groove XY positional informations of AFM controller output and corresponding lock mutually amplify
The phase difference of device output, which is inputted to human-computer interaction interface, to be shown and is stored；
5) AFM controller is imaged to the surface topography of nano thin-film machining area, obtains the XY positions for being processed groove
Confidence number and corresponding depth, and XY position signallings and corresponding depth are inputted to human-computer interaction interface shown and deposited
Storage；
6) human-computer interaction interface is by comparing step 4), corresponding phase difference and depth obtain deep on the XY positions that 5) obtain
Degree-phase difference curve；
7) corresponding depth value is the thickness of nano thin-film at depth-phase difference knee of curve.
Corresponding working depth is nano film thickness at the flex point of the derivative curve of the depth-phase difference curve.
The present invention has advantages below：
1st, the present invention realizes real-time working depth infomation detection in AFM process.Due to ultrasonic wave added AFM ultrasound
Vibration source provides energy for the ultrasonic vibration of Ultrasonic machining process and cantilever beam simultaneously, processed when the energy of vibration source is constant
The change of journey consumed energy can reflect in cantilever vibration of beam.The change of working depth can directly result in the increasing of consumed energy
Plus, cause the phase value of cantilever beam ultrasonic vibration to change.Therefore, by monitoring the phase value of cantilever beam, final energy in real time
Enough realize the real-time detection of working depth information.
2nd, the present invention can detect the change of material mechanical characteristic, and then be capable of detecting when that nano thin-film is handed over its substrate
Interface, so that it is determined that film thickness.For nano thin-film sample, the general difference of mechanical property of thin-film material and base material is very
Greatly.The mechanical property of specimen material and the phase place change of cantilever beam have a direct relation, therefore can be according to depth-phase of acquisition
The rate of change of curve analyzes point of inflexion on a curve and determines the position at interface, while also determining the thickness of film.By using base
In the method for phase difference detection, the accuracy of detection of nano film thickness is not only increased, and being capable of qualitative analysis nano thin-film
With the mechanical property of substrate.
Brief description of the drawings
Fig. 1 is structural representation of the invention；
Fig. 2 a are process principle figure of the invention；
Fig. 2 b are processing dynamic equivalent illustraton of model of the invention；
Fig. 3 a are the phase place change simulation comparison figure in the present invention for different sample mechanical properties；
Fig. 3 b are the phase derivative simulation comparison figure in the present invention for different sample mechanical properties；
Processing and phase detection result figure of the Fig. 4 for the present invention for pipe/polyhenylethylene nano film；
Wherein, 1 is lock-in amplifier, and 2 be human-computer interaction interface, and 3 be ultrasonic drivers, and 4 be nano thin-film, and 5 be that AFM is controlled
Device processed, 6 be photoelectric sensor, and 7 be Z-direction nanometer piezoelectric ceramics, and 8 be probe, and 9 be substrate, and 10 be ultrasonic vibrator, and 11 receive for XY
Rice locating platform.
Embodiment
The invention will be further described below in conjunction with the accompanying drawings.
A kind of nano film thickness detection means based on ultrasonic wave added AFM, including AFM system：For control probe and
Three-dimensional relative movement of the nano thin-film under nanoscale；Ultrasonic wave added system：For applying ultrasonic vibration to nano thin-film；Phase
Position detecting system：Interface and film thickness detection for realizing nano film material.
Described AFM system includes：AFM controller is connected with Z-direction nanometer piezoelectric ceramics and XY nanopositioning stages respectively,
Z-direction nanometer piezoelectric ceramics is fixed on above XY nanopositioning stages with probe, and photoelectric sensor is fixed on above probe, for connecing
Receive the laser from probe backside reflection.
The ultrasonic wave added system includes ultrasonic drivers and connected ultrasonic vibrator.
The phase detection includes：Lock-in amplifier input and reference input respectively with photoelectric sensor and super
Acoustic driver is connected, and the phase output of lock-in amplifier, the output end of AFM controller are connected with human-computer interaction interface respectively.
The nano thin-film and substrate are sticked on ultrasonic vibrator and are fixed on above XY nanopositioning stages.
Visited in a kind of nano film thickness detection method based on ultrasonic wave added AFM, lock-in amplifier detection process
The ultrasonic vibration of pin and the phase difference of ultrasound drive signals, then working depth information is obtained by AFM imagings, so that according to phase
The spatial correspondence of difference and working depth obtains depth-phase difference curve, can be detected according to the flex point that the curve occurs
Receive out meter film and the interface and film thickness of substrate.
A kind of nano film thickness detection method based on ultrasonic wave added AFM comprises the following steps：
1) ultrasonic drivers driving ultrasonic vibrator produces ultrasonic vibration, and drives sample to realize ultrasonic vibration；
2) by controlling Z-direction nanometer piezoelectric ceramics to drive probe to be moved along a straight line to sample, opened when probe is contacted with sample
Begin to process, control XY nanopositioning stages are moved with uniform velocity with direction initialization, and the ultrasonic vibration of sample passes to probe, by photoelectricity
After sensor detection, lock-in amplifier is sent to；
3) ultrasound drive signals of ultrasonic drivers are inputted to the reference input of lock-in amplifier, and lock-in amplifier will join
The phase difference for examining signal and input signal is exported to human-computer interaction interface progress display in real time and stored；
4) while being processed, AFM controller and lock-in amplifier will process the XY positional informations of groove and right simultaneously
The phase difference answered is shown and stored while inputting human-computer interaction interface；
5) AFM system carries out surface topography imaging to the machining area of sample, is obtained by AFM controller and is processed groove
XY position signallings and corresponding depth, and export shown and stored to human-computer interaction interface；
6) human-computer interaction interface is by comparing step 4), corresponding phase difference and depth obtain deep on the XY positions that 5) obtain
Degree-phase difference curve；
If 7) working depth is more than the thickness of nano thin-film, occur on depth-phase difference curve at flex point, flex point pair
The depth value answered is the thickness of nano thin-film.
Corresponding processing is deep at the corresponding phase difference point of inflexion on a curve of working depth or the flex point of the curve derivative curve
The judgement of the thickness for nano thin-film is spent, is realized by below equation：
U=HfVf+HsubVsub (1)
Wherein, DfIt is the thickness of nano thin-film, U is the energy of process consumption, HfAnd HsubBe respectively nano thin-film and
The hardness of substrate, VfAnd VsubIt is nano thin-film and the processed volume of substrate respectively, a is needle point in a ultrasonic vibration cycle
Mobile distance, v is the speed of needle point movement, and f and ω are respectively the frequency and angular frequency of ultrasonic vibration, and R is the needle point of probe
Radius, D is working depth, ksAnd csThe ability of sample storage energy and consumed energy in process is represented respectively, and the two can lead to
Solution formula (1) is crossed, (2), (3), (4) and (5) are obtained,It is the phase value of cantilever beam, C=ω/(kc+ks-mcω2), D=1/
ks, kcAnd mcIt is the dynamic equivalent hardness and quality of probe respectively.AsIt is the amplitude of nano thin-film vibration.
Formula (3), (4) illustrate different nano film thickness DfIt correspond to different processing volume Vf, formula (1) explanation
The energy consumption U that process disappears and processed material hardness (HfAnd Hsub) and the processed volume (V of materialfAnd Vsub) relevant,
Formula (5) illustrates the energy U and sample consumption energy of process consumption ability cs, can from formula (6) with particular kind of relationship
To find out, the phase value of cantilever beamWith the ability c of sample consumption energysThere is particular kind of relationship.Therefore when the hardness of nano thin-film
When different with the hardness of substrate, i.e., when material hardness has saltus step in process, ultimately result in the phase curve production of cantilever beam
Raw flex point, the thickness of nano thin-film is different, and corresponding depth is also different at its flex point.
Nano film thickness detection means based on ultrasonic wave added AFM is by AFM system, ultrasonic wave added system and phase-detection
System is constituted, and its system architecture is as shown in Figure 1.
Wherein AFM system is fixed by AFM controller 5, photoelectric sensor 6, Z-direction nanometer piezoelectric ceramics 7, probe 8 and XY nanometers
Bit platform 11 is constituted, and is mainly used in realizing AFM probe motion control, the motion control of nano thin-film, nano thin-film surface shape
The functions such as looks imaging, nanoprocessing；Ultrasonic wave added system is made up of ultrasonic drivers 3 and ultrasonic vibrator 10, for nanometer
Film applies controllable ultrasonic vibration, realizes the function of ultrasonic wave added processing；Phase detection is by lock-in amplifier 1, man-machine
Interactive interface 2 is constituted, and is mainly used in nano film thickness detection function.Pass through AFM control systems, ultrasonic wave added system and phase
Nano film thickness detection can be achieved in the combination of detecting system.
The process principle and model of the present invention is as shown in Fig. 2 a- Fig. 2 b.Fig. 2 a are principle schematic of the probe in processing.
The back side of substrate 9 adhering to ultrasonic vibrator 10.Ultrasonic drivers 3 apply ultrasound drive signals to ultrasonic vibrator 10 produces it
Ultrasonic vibration, while drive signal is also applied to the reference input of lock-in amplifier 1 as reference signal.Ultrasonic vibrator 10
The ultrasonic vibration of generation drives substrate 9 and nano thin-film 4 to vibrate, and probe 6 is added with certain speed on nano thin-film 4
Work, ultrasonic vibration passes to probe 8 by tip-sample interaction and brings it about forced vibration.Beam of laser impinges upon probe 8
The back of tip position simultaneously reflexes to photoelectric sensor 6, and the deflection of the cantilever beam of probe 8 is detected, and exports and mutually put to lock
The input of big device.Lock-in amplifier 1 detects and extracts reference signal and the phase difference of input signal, and outputs this to people
Machine interactive interface 2.Human-computer interaction interface 2 reads the position signalling of the XY nanopositioning stages of AFM controller 5 simultaneously, by phase
The position signalling of difference and XY nanopositioning stages show, store and handle in real time.After completion of processing, AFM system pair is utilized
Machining area carries out AFM pattern imagings, obtains the position signallings of the XY nanopositioning stages of nanostructured processed and right
The depth of position is answered, and is exported to human-computer interaction interface 2.Human-computer interaction interface 2 is by the position of identical XY nanopositioning stages
Phase difference and depth extraction come out, obtain depth-phase difference curve.By corresponding at flex point on judgment curves and flex point
Depth value, so as to realize the Thickness sensitivity of nano thin-film.
Process principle shown in Fig. 2 a can be equivalent to the dynamic model shown in Fig. 2 b.The forced vibration of cantilever beam can be waited
Parameter is imitated into for mcAnd kcSpring-mass model, Ultrasonic machining process it is equivalent into parameter be ksAnd csUltrasonic machining model, two
Individual parameter distinguishes the energy storage and dissipation characteristic of representative sample.Sample is in the presence of ultrasonic vibration power F (t) with ys=Assin
(ω t) is moved.Regard Fig. 2 b vibration as a Forced Vibration System, then the motion of vibrational system can be set up
Equation：
Wherein,ycFor probe
The equation of motion, t is time, AsThe amplitude vibrated for nano thin-film, ω, ωnThe respectively frequency of ultrasound-driven and forced vibration system
The intrinsic frequency of system, ξ is damping ratio.
It (7) solved equation by the method for undetermined coefficients can obtain the phase value of cantilever beam vibration and be：
It can be seen from analysis above, the c in processing modelsThe energy of consumption is represented, and the energy of processing consumption is with adding
Work depth is relevant with the mechanical property of processed specimen material, so being understood according to equation (8), can detect in process
The change of phase value obtains the mechanical property of real-time working depth and specimen material.Therefore can also be with phase value as anti-
Present to control the depth and state of processing.
According to theory analysis and the mathematical modeling set up, simulation analysis can be carried out.Simulation result such as Fig. 3 a- Fig. 3 b institutes
Show.The hardness of nano thin-film is Hf, the hardness of substrate is Hsub, and the hardness of substrate is set to conventional silicon base.Nano thin-film
Hardness can be changed according to the difference of material, such as soft polymer to especially hard graphene.It will receive
The hardness of rice film is set to 0.001HsubTo 100Hsub, represent the nano film material of different soft and hard degree.Fig. 3 a are different
Depth-phase curve of the nano film material, (H when nano film material is softerf=0.001Hsub,0.01Hsub), can be with bright
It is aobvious to find out the flex point that curve is produced at interface because of the change of material property.When the hardness and substrate of nano film material
(H when identicalf=Hsub), depth-phase curve is a smooth curve, without any flex point.When nano thin-film hardness is more than
(H during substratef=10Hsub,100Hsub), the shape of depth-phase curve there occurs very big difference with first three, but can not
Find out obvious flex point.Fig. 3 b are the derivatives of Fig. 3 a curves, it can be clearly seen that gone out in interface, except nano thin-film and substrate
(H except in the case of hardness is identicalf=Hsub), other curves have obviously flex point, and interface is may determine that according to flex point
With the actual (real) thickness of nano thin-film.
According to the method proposed, the checking that can be tested.The material of nano thin-film is polystyrene, and its thickness is
26 nanometers.Substrate is silicon.Depth as shown in Figure 4 has been obtained using the nano film thickness detection method based on ultrasonic wave added AFM
Degree-phase curve.This it appears that flex point, corresponding depth value is 26 nanometers at flex point in the curve obtained from experiment,
This result is consistent with actual nano film thickness.In addition, bright in the front half section slope of a curve that depth value is less than 26 nanometers
The aobvious second half section slope of a curve being less than more than 26 nanometers, the hardness of this explanation nano thin-film is less than the hardness of substrate.And it is actual
The hardness of upper polystyrene is less than the hardness of silicon, and experimental result also extremely meets with actual conditions.Illustrate proposed method energy
The mechanical property of enough qualitative analysis nano thin-films and substrate.
Nano film thickness detection method based on ultrasonic wave added AFM comprises the following steps：
1) driving of ultrasonic drivers 3 ultrasonic vibrator 10 produces ultrasonic vibration, and drives substrate 9 and nano thin-film 4 to realize
Ultrasonic vibration；
2) by controlling Z-direction nanometer piezoelectric ceramics 7 to drive probe 8 to be moved along a straight line to nano thin-film 4, probe 8 and nanometer
Film 4 starts processing when contacting, control XY nanopositioning stages 11 are moved with uniform velocity with direction initialization, the ultrasound of nano thin-film 4
Vibration passes to probe 8, after photoelectric sensor 6 is detected, is sent to lock-in amplifier 1；
3) ultrasound drive signals of ultrasonic drivers 3 are inputted to the reference input of lock-in amplifier 1, lock-in amplifier 1
The phase difference of reference signal and input signal is exported to the face of man-machine interaction circle 2 and show and store in real time；
4) while being processed, AFM controller 5 and lock-in amplifier 1 simultaneously by process groove XY positional informations and
Corresponding phase difference inputs human-computer interaction interface 2 and is shown and stored simultaneously；
5) AFM system is imaged to the surface topography of the machining area of nano thin-film 4, and AFM controller 5 is processed
The XY position signallings and corresponding depth of groove, input are shown and stored to human-computer interaction interface 2；
6) human-computer interaction interface 2 is by comparing step 4), corresponding phase difference and depth are obtained on the XY positions that 5) obtain
Depth-phase difference curve；
If 7) working depth is more than the thickness of nano thin-film, occur on depth-phase difference curve at flex point, flex point pair
The depth value answered is the thickness of nano thin-film 4.
Claims (6)
1. a kind of nano film thickness detection means based on ultrasonic AFM, it is characterised in that including：AFM system and connect with it
Ultrasonic wave added system, the phase detection connect, the ultrasonic wave added system is connected with phase detection；
AFM system：For controlling the three-dimensional relative movement of probe and nano thin-film under nanoscale, and in real time by probe
Cantilever beam defection signal is exported to phase detection；
Ultrasonic wave added system：For applying ultrasonic vibration to nano thin-film, and ultrasound drive signals are sent to phase-detection system
System；
Phase detection：For obtaining probe vibration phase according to the cantilever beam defection signal of ultrasound drive signals and probe
Difference, realizes the detection of nano film thickness.
2. a kind of nano film thickness detection means based on ultrasonic AFM as described in claim 1, it is characterised in that described
AFM system includes AFM controller (5), photoelectric sensor (6), Z-direction nanometer piezoelectric ceramics (7), probe (8) and XY nanometer positionings
Platform (11)；The input of the AFM controller (5) is connected with photoelectric sensor (6), control end and Z-direction nanometer piezoelectric ceramics
(7), XY nanopositioning stages (11), phase detection connection, Z-direction nanometer piezoelectric ceramics (7) is fixed on XY with probe (8) to be received
Above rice locating platform (11), photoelectric sensor (6) is fixed on above probe (8), for receiving from probe (8) backside reflection
Laser, and the cantilever beam defection signal of probe is exported to phase detection.
3. a kind of nano film thickness detection means based on ultrasonic AFM as described in claim 1, it is characterised in that：It is described
Ultrasonic wave added system includes ultrasonic drivers (3) and connected ultrasonic vibrator (10)；Ultrasonic drivers (3) hair
Ultrasonic signal is sent to ultrasonic vibrator (10), phase detection；It is flat that the ultrasonic vibrator (10) is fixed on XY nanometer positionings
On platform (11), ultrasonic vibrator (10) is provided with the nano thin-film (4) in substrate (9).
4. a kind of nano film thickness detection means based on ultrasonic AFM as described in claim 1, it is characterised in that：It is described
Phase detection includes lock-in amplifier (1), human-computer interaction interface (2)；The input of the lock-in amplifier (1), reference
Input is connected with photoelectric sensor (6) and ultrasonic drivers (3) respectively, the phase difference output end of lock-in amplifier (1) and people
Machine interactive interface (2) is connected, and human-computer interaction interface (2) is connected with the control end of AFM controller (5).
5. a kind of nano film thickness detection method based on ultrasonic AFM, it is characterised in that comprise the following steps：
1) ultrasonic drivers (3) driving ultrasonic vibrator (10) produces ultrasonic vibration, and drives substrate (9) and nano thin-film (4)
Realize ultrasonic vibration；
2) AFM controller (5) is by controlling Z-direction nanometer piezoelectric ceramics (7) to drive probe (8) to do straight line fortune to nano thin-film (4)
Dynamic, probe (8) starts processing when being contacted with nano thin-film (4), and control XY nanopositioning stages (11) are done at the uniform velocity with direction initialization
Motion, the ultrasonic vibration of nano thin-film (4) passes to probe (8), after photoelectric sensor (6) detection, sends the cantilever of probe
Beam defection signal gives lock-in amplifier (1)；
3) ultrasound drive signals of ultrasonic drivers (3) are inputted to lock-in amplifier (1), and lock-in amplifier (1) will be used as reference
The ultrasound drive signals of signal and the phase difference of cantilever beam defection signal export to human-computer interaction interface (2) carry out in real time display and
Storage；
4) while being processed, the processing groove XY positional informations of AFM controller (5) output and corresponding lock mutually amplify
The phase difference of device (1) output, which is inputted to human-computer interaction interface (2), to be shown and is stored；
5) AFM controller (5) is imaged to the surface topography of nano thin-film (4) machining area, obtains the XY for being processed groove
Position signalling and corresponding depth, and XY position signallings and corresponding depth are inputted to human-computer interaction interface (2) shown
And storage；
6) human-computer interaction interface (2) is by comparing step 4), 5) corresponding phase difference and depth obtain deep on the XY positions that obtain
Degree-phase difference curve；
7) corresponding depth value is the thickness of nano thin-film (4) at depth-phase difference knee of curve.
6. a kind of nano film thickness detection method based on ultrasonic AFM according to claim 5, it is characterised in that described
Corresponding working depth is nano film thickness at the flex point of the derivative curve of depth-phase difference curve.
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| CN110095637A (en) * | 2019-05-08 | 2019-08-06 | 国家纳米科学中心 | The test method of atomic force microscope and sample surfaces property |
| CN110134002A (en) * | 2018-02-09 | 2019-08-16 | 中国科学院沈阳自动化研究所 | A kind of controllable depth surface defect processing method based on ultrasonic AFM closed-loop system |
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| CN110134002A (en) * | 2018-02-09 | 2019-08-16 | 中国科学院沈阳自动化研究所 | A kind of controllable depth surface defect processing method based on ultrasonic AFM closed-loop system |
| CN110134002B (en) * | 2018-02-09 | 2021-05-25 | 中国科学院沈阳自动化研究所 | Controllable depth surface defect processing method based on ultrasonic AFM closed loop system |
| CN109633210A (en) * | 2019-01-25 | 2019-04-16 | 电子科技大学 | A method of film dimensions are measured based on near-field microwave microscopic system |
| CN109633210B (en) * | 2019-01-25 | 2021-03-16 | 电子科技大学 | Method for measuring size of thin film based on near-field microwave microscope system |
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| CN110794172A (en) * | 2019-11-13 | 2020-02-14 | 北京机械设备研究所 | Method and device for measuring thickness of film grown on substrate |
| CN110763873A (en) * | 2019-11-18 | 2020-02-07 | 中国科学院沈阳自动化研究所 | Peak force tapping and torsional resonance compounding method based on atomic force microscope technology |
| CN110763873B (en) * | 2019-11-18 | 2021-04-13 | 中国科学院沈阳自动化研究所 | Peak force tapping and torsional resonance compounding method based on atomic force microscope technology |
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