CN112394199A - Atomic force microscope and measuring method thereof - Google Patents

Atomic force microscope and measuring method thereof Download PDF

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Publication number
CN112394199A
CN112394199A CN201910757318.7A CN201910757318A CN112394199A CN 112394199 A CN112394199 A CN 112394199A CN 201910757318 A CN201910757318 A CN 201910757318A CN 112394199 A CN112394199 A CN 112394199A
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China
Prior art keywords
probe
driving
cantilever beam
probe assembly
measurement
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CN201910757318.7A
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Chinese (zh)
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陈卓
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Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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Priority to CN201910757318.7A priority Critical patent/CN112394199A/en
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01QSCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/24AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/24Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures

Abstract

The invention relates to an atomic force microscope and a measuring method thereof, wherein the atomic force microscope comprises: the probe assembly comprises a probe head, a driving device and a cantilever beam, the probe head is fixed at one end of the cantilever beam, the other end of the cantilever beam is fixedly connected with the driving device, and the driving device is used for driving the cantilever beam of the probe assembly to rotate. The atomic force microscope can improve the three-dimensional measurement efficiency.

Description

Atomic force microscope and measuring method thereof
Technical Field
The invention relates to the field of semiconductor equipment, in particular to an atomic force microscope and a measuring method thereof.
Background
Topography measurement of semiconductor devices is a very important test in integrated circuit manufacturing. At present, three measuring machines which can measure the three-dimensional appearance of a semiconductor device comprise an Atomic Force Microscope (AFM), a critical dimension-scanning electron microscope (CD-SEM) and an optical critical dimension measuring microscope (OCD), and have advantages and disadvantages respectively.
The AFM machine can reflect the surface appearance of the wafer through the interaction force with the surface of the device, and has the advantages that the height fluctuation state of the surface of the device can be accurately obtained in a numerical form, and parameters such as roughness, average gradient, pore structure, pore size distribution and the like of the surface of the device can be obtained through analyzing the whole surface image, but the AFM machine has the defects that two-dimensional measurement data are obtained and deviation exists relative to three-dimensional measurement data.
In the CD-SEM, primary electrons are generated by bombarding a target material through cathode rays, the primary electrons interact with the surface of a sample to generate secondary electrons, and collected secondary electron signals are processed to obtain a characteristic size image. Its advantages are fast measurement, clear and intuitive image, and the lack of information about the third dimension and easy influence of SEM to the bias variation of Critical Dimension (CD) caused by static electricity, material difference and proximity effect.
OCD is through establishing the model, collecting the spectrum, adopt the algorithm to carry on measuring through the spectrum fitting, the advantage is that it is fast to measure speed, with low costs, the disadvantage is that the result calculated through model and algorithm will deviate from actual result, the accuracy of measurement needs the check-up, and can only measure the single repetitive structure.
In summary, the efficiency of the three-dimensional shape measurement of the semiconductor device is still to be further improved.
Disclosure of Invention
The invention aims to provide an atomic force microscope and a measuring method thereof, which are used for improving the efficiency of three-dimensional shape measurement.
In order to solve the above problems, the present invention provides an atomic force microscope including: the probe assembly comprises a probe head, a driving device and a cantilever beam, the probe head is fixed at one end of the cantilever beam, the other end of the cantilever beam is fixedly connected with the driving device, and the driving device is used for driving the cantilever beam of the probe assembly to rotate.
Optionally, the driving device comprises a vertical driving unit for driving the cantilever beam to vibrate in a vertical plane.
Optionally, the driving device comprises a rotation driving unit for driving the cantilever beam to rotate around an axis perpendicular to the horizontal plane.
Optionally, the vertical driving unit comprises at least one piezoceramic driver for driving the cantilever beam to vibrate.
Optionally, the method further includes: and the translation device is connected with the driving device and is used for controlling the probe assembly to perform translation motion.
Optionally, the method further includes: and the data processing module is used for carrying out data splicing and curve fitting on the measurement structure acquired by the probe head at different angles to form a three-dimensional model of the measured target.
Optionally, the driving devices of the probe assemblies of each group are independent of each other.
Optionally, the method further includes: the position sensing modules correspond to the probe assemblies one to one and are used for detecting height changes of probe heads of the probe assemblies.
The technical scheme of the invention also provides a measuring method of the atomic force microscope, which comprises the following steps: simultaneously, carrying out three-dimensional shape measurement on the sample by adopting at least two groups of probe assemblies; and driving the cantilever beam of the probe assembly to rotate according to the three-dimensional shape of the sample, so that the probe head is always vertical to the measurement surface in the scanning process.
Optionally, the driving the cantilever of the probe assembly to rotate includes: and driving the cantilever beam to vibrate in a vertical plane.
Optionally, the driving the cantilever of the probe assembly to rotate includes: the cantilever beam is driven to rotate around an axis vertical to the horizontal plane.
Optionally, the method further includes: and driving the cantilever beam of the probe assembly to vibrate by adopting a piezoelectric ceramic driver.
Optionally, the method further includes: and controlling the probe assembly to perform translational motion.
Optionally, the method further includes: and carrying out data splicing and curve fitting on the measurement structure obtained by the probe at different angles to form a three-dimensional model of the measured target.
Optionally, the cantilever beams of each probe assembly are independently driven to rotate.
Optionally, the method further comprises detecting a height change of a probe head of the probe assembly.
The atomic force microscope comprises more than two probe assemblies, and can be used for scanning and measuring the surface of a target to be measured, so that the measuring speed can be increased. And the cantilever beam of each probe assembly can vibrate in a vertical plane and rotate around a vertical shaft, so that the probe head can be always vertical to the measuring surface, and the accuracy of three-dimensional measurement is improved.
Drawings
FIG. 1 is a schematic structural diagram of an atomic force microscope in accordance with one embodiment of the present invention;
FIG. 2A is a schematic structural diagram of a probe assembly according to one embodiment of the present invention;
FIGS. 2B-2C are schematic views illustrating the motion state of a probe assembly according to an embodiment of the present invention;
FIG. 3 is a schematic illustration of a sample surface measurement according to an embodiment of the present invention;
FIG. 4 is a schematic structural view of a probe assembly according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a driving signal applied to a piezo ceramic driver of a probe assembly according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of probe head orientations corresponding to different positions of a measurement surface according to an embodiment of the invention;
fig. 7 is a flowchart illustrating a measuring method of an atomic force microscope according to an embodiment of the invention.
Detailed Description
As mentioned in the background, the existing devices focusing on three-dimensional shape measurement of semiconductor devices have advantages and disadvantages, and the inventor selects to improve the atomic force microscope to realize fast and accurate measurement of three-dimensional shape of semiconductor devices on the basis of the existing devices.
The following describes in detail an atomic force microscope according to an embodiment of the present invention with reference to the drawings.
Fig. 1 is a schematic structural diagram of an atomic force microscope according to an embodiment of the invention.
The atomic force microscope includes: the probe assembly comprises a base 101, a probe assembly 102a and a probe assembly 102b which are arranged on the base 101.
The base 101 specifically includes other functional modules of the atomic force microscope, such as an optical microscope lens, a position sensing module, and the like, which are not listed here.
In this embodiment, the atomic force microscope includes two sets of probe assemblies, namely a probe assembly 102a and a probe assembly 102b, and when a sample is measured, the sample can be simultaneously detected by the probe assembly 102a and the probe assembly 102b, so that the measurement efficiency is improved. The probe assembly 102a and the probe assembly 102b are independent of each other, and can control the position and the measurement state of the probe assembly 102a and the probe assembly 102b respectively. In other specific embodiments, the atomic force microscope may further include three or more probe assemblies, and the rapid measurement can be further achieved by simultaneously measuring the sample with the three or more probe assemblies.
The atomic force microscope further includes: and the at least two position sensing modules correspond to the probe assemblies one by one and are used for detecting the heights of the probe heads of the probe assemblies. In the measuring process, the height change of the probe head corresponds to the appearance of the measuring surface, and the fluctuation characteristics of the measuring surface can be reflected by measuring the height change of the probe head.
The base 101 includes a translation device corresponding to each probe assembly, in this embodiment, the probe assembly 102a is connected to the translation device 103a, and the probe assembly 102b is connected to the translation device 103b, so that the translation of the probe assembly 102a and the probe assembly 102b can be controlled by the translation device 103a and the translation device 103b, respectively, so as to adjust the positions of the probe assembly 102a and the probe assembly 102 b.
Referring to fig. 2A, a schematic diagram of a probe assembly according to an embodiment is shown.
The probe assembly comprises a probe head 1023, a driving device 1021 and a cantilever beam 1022, wherein the probe head 1023 is fixed at one end of the cantilever beam 1022, and the other end of the cantilever beam 1022 is fixedly connected with the driving device 1021.
Fig. 2B is a schematic diagram showing the movement of the probe assembly according to an embodiment of the present invention. The driving device 1021 includes a vertical driving unit for driving the cantilever 1022 to vibrate in a vertical plane, in which the test specimen is moved in parallel with the base of the machine in the X-axis.
Fig. 2C is a schematic diagram of the movement of a probe assembly according to another embodiment of the present invention. The driving device 1021 comprises a rotation driving unit for driving the cantilever beam 1022 to rotate around a vertical axis perpendicular to the horizontal plane, i.e. to rotate in the XZ plane.
In other specific embodiments, the driving device 1021 may include a vertical driving unit and a rotation driving unit at the same time, and the cantilever 1021 may vibrate in a vertical plane and move around a vertical axis, so that the probe head 1023 changes an angle according to the surface topography of the sample to be measured, and the probe head 1023 is perpendicular to the measurement surface all the time, which can improve the accuracy of the topography measurement of the sidewall position, thereby improving the accuracy of the overall three-dimensional measurement. The driving devices of different probe assemblies are mutually independent, and can independently control the movement of the cantilever beam of each probe assembly so as to adapt to the topography characteristics of the measuring position of each probe assembly.
Since the afm is used in the measurement process, the probe head 1023 can be kept relatively still with the measurement surface, and in contact with or not in contact with the measurement surface for a certain measurement position; the probe head 1023 can also be vibrated at a frequency, the probe head 1023 periodically making contact with the measurement surface.
Referring to FIG. 3, a schematic diagram of a sample surface measurement according to an embodiment of the present invention is shown, in which a single probe assembly is taken as an example.
At the position 1, the measuring surface is lower, the cantilever beam can be rotated downwards, so that the probe head is vertical to the side wall of the protrusion, and the probe assembly can be horizontally moved along the measuring direction in the measuring process; along the convex side walls the cantilever beam is rotated gradually upwards so that the probe head is always perpendicular to the measurement surface to position 2.
And in the measuring process, the cantilever beams can vibrate in a direction vertical to the cantilever beams at a certain period at the same time.
Fig. 4 is a schematic structural diagram of a probe assembly according to an embodiment of the invention.
The drive mechanism 1021 of the probe assembly includes at least one piezo ceramic driver for converting electrical energy into kinetic energy, causing the drive mechanism 1021 to vibrate, thereby driving the cantilever 1022 in motion.
In this embodiment, the driving device 1021 includes a first piezoceramic driver 301 and a second piezoceramic driver 302 as a vertical driving unit and a rotational driving unit, respectively. The vibration directions of the first piezoceramic driver 301 and the second piezoceramic driver 302 are perpendicular to each other, wherein the first piezoceramic driver 301 vibrates vertically to drive the cantilever beam 1022 to vibrate in a vertical plane; the second piezoceramic driver 302 vibrates laterally to drive the cantilever 1022 to rotate around an axis perpendicular to the horizontal plane. The first piezoceramic driver 301 and the second piezoceramic driver 302 are independent of each other, and can independently control the movement of the cantilever beam 1022.
The first piezoceramic driver 301 is controlled by a drive signal Sd1, and the first piezoceramic driver 301 is controlled by the drive signal Sd 2.
Wherein the content of the first and second substances,
Sd1=Sd1,v+Sd1,t
Sd2=Sd2,v+Sd2,t
referring to fig. 5, a vertical driving signal Sd according to an embodiment of the invention is shown1,vAnd Sd2,vAnd a transverse torsion drive signal Sd1,tAnd Sd2,tSchematic representation of (a).
Sd1,vAnd Sd2,vHas a frequency equal to or close to the vertical vibration frequency of the cantilever 1022, Sd1,tAnd Sd2,tIs at or near the torsional vibration frequency of the cantilever 1022, and Sd1,tAnd Sd2,t180 deg. out of phase with each other.
The vertical vibration, the transverse torsional vibration and the combined vertical and transverse direction vibration of the cantilever beam can be controlled by controlling the driving signals Sd1 and Sd 2.
In one embodiment, the cantilever beam has the following measurement modes during measurement:
1. contact mode: and a driving signal is not applied to the first piezoelectric ceramic driver 301 and the second piezoelectric ceramic driver 302, the cantilever beam does not vibrate, and the probe head is in contact with the measurement surface.
2. Vertical vibration mode: sd1,tAnd Sd2,tSignal off, Sd is applied1,vAnd Sd2,vAnd the signal drives the cantilever beam to vibrate vertically.
3. Transverse vibration mode: application of Sd1,tAnd Sd2,tSignal, off Sd1,vAnd Sd2,vA signal.
4. Mixed mode: sd1,t、Sd2,tSignal and Sd1,v、Sd2,vThe signals are all on.
The crosstalk between the vertical vibration mode and the lateral torsional vibration mode is small and does not substantially interfere with each other.
The suitable vibration mode can be selected according to different measurement requirements.
Referring to FIG. 6, different locations on the measurement surface correspond to different probe head orientations.
And for different positions, the rotation angle of the cantilever beam can be respectively adjusted in a self-adaptive manner according to the morphological characteristics, so that the probe head is always vertical to the measurement surface.
Depending on the topographical features, the surface to be measured can be divided into different feature areas, for example into different areas depending on the measurement angle. In fig. 6, as an example, the feature having protrusions is divided into a left bottom surface (LB), a left base angle (LBC), a Left Sidewall (LS), a left top angle (LTC), a top (T), a right bottom surface (RB), a right base angle (RBC), a Right Sidewall (RS), and a right top angle (RTC). And aiming at different areas, the cantilever beam is driven to rotate in a corresponding mode in the measuring process so as to self-adapt to the topography characteristic of the measuring surface, and the probe head is always vertical to the measuring surface. In fig. 6, the direction of the marked arrow of the measuring surface is the tip orientation of the probe head.
The atomic force microscope further includes: and the data processing module is used for carrying out data splicing and curve fitting on the measurement structure acquired by the probe at different angles to form a three-dimensional model of the measured target so as to carry out overall evaluation. The key of data splicing is to find the overlapping areas of adjacent images, and then match to obtain the best matching point between the overlapping areas.
The atomic force microscope comprises more than two probe assemblies, and the surface of the target to be measured is scanned and measured at the same time, so that the measuring speed can be increased. And the cantilever beam of each probe assembly can vibrate in a vertical plane and rotate around a vertical shaft, so that the probe head is always vertical to the measuring surface, and the accuracy of three-dimensional measurement is improved.
The embodiment of the invention also provides a measuring method of the atomic force microscope.
Referring to fig. 7, a schematic flow chart of a measuring method of an atomic force microscope according to an embodiment of the invention includes the following steps:
step S101: and simultaneously, carrying out three-dimensional shape measurement on the sample by adopting at least two groups of probe assemblies.
The measuring efficiency can be improved by simultaneously detecting more than two groups of probe assemblies. The probe assemblies are independent from each other, and the position and the motion state of each probe assembly can be controlled respectively so as to adapt to the appearance characteristics of the respective detection position.
Step S102: and driving the cantilever beam of the probe assembly to rotate according to the three-dimensional shape of the sample, so that the probe head is always vertical to the measurement surface in the scanning process.
The cantilever beams of the probe assemblies can be independently driven to rotate. The driving the cantilever beam of the probe assembly to rotate comprises: the cantilever beam is driven to vibrate in the vertical plane (see fig. 2B), and the cantilever beam is driven to rotate around an axis perpendicular to the horizontal plane (see fig. 2C). The cantilever beam can be driven to rotate by adopting one or two modes, and the position of the probe head is adjusted, so that the tip of the probe head is always vertical to the measuring surface in the measuring process, the positions of the top of the bulge and the bottom of the depression of the measuring surface can be accurately measured, the accurate measurement of the side wall can be realized, and the accuracy of three-dimensional measurement is improved.
The probe assembly can also be controlled to perform translational motion during measurement so as to change the measurement position of the probe assembly.
The cantilever beam of the probe assembly can be driven to vibrate by a piezoelectric ceramic driver, and the vibration mode of the cantilever beam in the vertical plane, the transverse torsional vibration and the vertical and transverse directions are controlled to vibrate and rotate in the measuring process. According to different measurement requirements, a proper vibration mode or no vibration can be selected.
And for different positions, the rotation angle of the cantilever beam can be respectively adjusted in a self-adaptive manner according to the morphological characteristics, so that the probe head is always vertical to the measurement surface. Depending on the topographical features, the surface to be measured can be divided into different feature areas, for example into different areas depending on the measurement angle. And carrying out data splicing and curve fitting on the measurement structure obtained by the probe at different angles to form a three-dimensional model of the measured target. The key of data splicing is to find the overlapping area of adjacent images, and then match to obtain the best matching point between the overlapping areas.
In the measuring process, the cantilever beam can rotate in the XZ plane (namely, the cantilever beam rotates around the axis vertical to the horizontal plane), so that the displacement deviation in the Z-axis direction can also cause the deviation of a detection result, the accurate control of the displacement in the vertical direction is realized, and the measurement accuracy is favorably improved. The dynamic tracking in the Z direction can be correspondingly realized through a feedforward and feedback mixed control method in the Z direction, and the displacement adjustment in the Z direction is corrected through a measurement result and then fed back to a subsequent measurement process, so that the measurement accuracy is improved.
According to the measuring method, the surface of the target to be measured is scanned and measured simultaneously through more than two probe assemblies, and the measuring speed can be improved. And the cantilever beams of the probe components are driven to rotate in the measuring process, so that the probe head is always perpendicular to the measuring surface, and the accuracy of three-dimensional measurement is improved.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (16)

1. An atomic force microscope, comprising:
the probe assembly comprises a probe head, a driving device and a cantilever beam, the probe head is fixed at one end of the cantilever beam, the other end of the cantilever beam is fixedly connected with the driving device, and the driving device is used for driving the cantilever beam of the probe assembly to rotate.
2. The afm according to claim 1, wherem the driving means includes a vertical driving unit for driving the cantilever beam to vibrate in a vertical plane.
3. The afm according to claim 1 or 2, wherem the driving means includes a rotation driving unit for driving the cantilever beam to rotate about an axis perpendicular to the horizontal plane.
4. The afm according to claim 2, wherem the vertical drive unit comprises at least one piezo ceramic driver for driving the cantilever beam to vibrate.
5. The afm according to claim 1, further comprising: and the translation device is connected with the driving device and is used for controlling the probe assembly to perform translation motion.
6. The afm according to claim 1, further comprising: and the data processing module is used for carrying out data splicing and curve fitting on the measurement structure acquired by the probe head at different angles to form a three-dimensional model of the measured target.
7. The afm according to claim 1, wherem the driving means of each set of probe assemblies are independent of each other.
8. The afm according to claim 1, further comprising: the position sensing modules correspond to the probe assemblies one to one and are used for detecting height changes of probe heads of the probe assemblies.
9. The measurement method of the atomic force microscope according to any one of claims 1 to 8, comprising:
simultaneously, carrying out three-dimensional shape measurement on the sample by adopting at least two groups of probe assemblies;
and driving the cantilever beam of the probe assembly to rotate according to the three-dimensional shape of the sample, so that the probe head is always vertical to the measurement surface in the scanning process.
10. The afm measurement method of claim 9, wherein the driving the cantilever beam of the probe assembly to rotate comprises: and driving the cantilever beam to vibrate in a vertical plane.
11. The afm measurement method according to claim 9 or 10, wherem the driving the cantilever of the probe assembly to rotate includes: the cantilever beam is driven to rotate around an axis vertical to the horizontal plane.
12. The measurement method of the atomic force microscope according to claim 9, further comprising:
and driving the cantilever beam of the probe assembly to vibrate by adopting a piezoelectric ceramic driver.
13. The measurement method of the atomic force microscope according to claim 9, further comprising:
and controlling the probe assembly to perform translational motion.
14. The measurement method of the atomic force microscope according to claim 9, further comprising:
and carrying out data splicing and curve fitting on the measurement structure obtained by the probe at different angles to form a three-dimensional model of the measured target.
15. The afm measurement method according to claim 9, wherem the cantilever beams of the probe assemblies are independently driven to rotate.
16. The afm measurement method according to claim 9, further comprising detecting a change in height of a probe head of the probe assembly.
CN201910757318.7A 2019-08-16 2019-08-16 Atomic force microscope and measuring method thereof Pending CN112394199A (en)

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Publication number Priority date Publication date Assignee Title
CN110954714A (en) * 2019-12-20 2020-04-03 江苏集萃微纳自动化系统与装备技术研究所有限公司 Real-time rigidity adjusting method for probe of atomic force microscope

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