CN108395556B - 一种具有优异热电性能的高规整度聚噻吩薄膜及其制备方法 - Google Patents
一种具有优异热电性能的高规整度聚噻吩薄膜及其制备方法 Download PDFInfo
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- KZMGYPLQYOPHEL-UHFFFAOYSA-N Boron trifluoride etherate Chemical group FB(F)F.CCOCC KZMGYPLQYOPHEL-UHFFFAOYSA-N 0.000 claims description 21
- 229930192474 thiophene Natural products 0.000 claims description 17
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- CSDQQAQKBAQLLE-UHFFFAOYSA-N 4-(4-chlorophenyl)-4,5,6,7-tetrahydrothieno[3,2-c]pyridine Chemical compound C1=CC(Cl)=CC=C1C1C(C=CS2)=C2CCN1 CSDQQAQKBAQLLE-UHFFFAOYSA-N 0.000 claims description 9
- 239000002516 radical scavenger Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- UWKQJZCTQGMHKD-UHFFFAOYSA-N 2,6-di-tert-butylpyridine Chemical group CC(C)(C)C1=CC=CC(C(C)(C)C)=N1 UWKQJZCTQGMHKD-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 9
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 8
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
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Abstract
本发明公开了一种具有优异热电性能的高规整度聚噻吩薄膜及其制备方法。该方法为在BFEE/DTBP体系中恒电流电化学聚合制备聚噻吩的方法,聚噻吩薄膜内部结构的形貌可以通过电化学聚合过程中的电流密度大小来调控,随着电流密度增大,聚噻吩薄膜内部有纳米片层出现,在1mA cm‑2的电流密度条件下制备的聚噻吩薄膜具有很高的规整度,并且具有很好的热电性能,其功率因子可达98.8±4.7μW m‑1K‑2,ZT值可达0.09±0.01。
Description
技术领域
本发明属于有机导电高分子材料领域,具体涉及一种具有优异热电性能的高规整度聚噻吩薄膜及其制备方法。
背景技术
国民经济的快速发展和人民生活水平的日益提高,是中国能源需求不断增加的基本推动力。中国是一个能源生产和消费大国,拥有丰富的化石能源,但是人均能源资源拥有量较低,再加上能源利用技术落后,利用低下,我国能源的消耗速度比其他国家更快,能源枯竭的威胁可能来的更早、更严重。因而,日益增长的能源压力使得我们不得不寻找解决能源危机的突围之路。
根据美国能源部对初级能源消耗的估算,超过55%的能源最终以废热的形式被释放到环境中。如何将废热再次利用,提高能源的使用效率具有重要的意义。热电材料是一种能将热能和电能相互转换的功能材料,可以制造热电发电机或热电制冷器件。热电材料器件具有体积小,重量轻,无噪音,无污染,可以回收热能转变成电能等优点。热电材料性能主要由无量纲优值ZT来衡量,它与材料的Seebeck系数S、电导率σ、热导率k和温度T相关,即:ZT=S2σT/k。目前热电材料制成装置的效率仍然远低于传统的发电机或者冰箱。好的热电材料需要有高的ZT值。由于决定材料热电性能的三个重要参数S、σ、k之间是相互关联的,如何实现这些参数的独立调控使材料在很宽的温度范围内具有较高的ZT值是热电材料的研究核心。目前,无机材料(Bi2Te3,Sb2Te3,SnSe)仍然是最好的热电材料。但是,无机热电材料需要高真空的加工条件,并且在地壳中的含量较低。导电聚合物相对于无机材料具有明显的优势,质量轻,成本低,力学性能好,易大规模溶液加工,并且具有较大的Seebeck系数和较低的热导率,但是较低的电导率限制了其对热能的收集利用。目前,有机热电材料的研究主要包括导电聚合物,电荷转移复合物、有机无机复合物以及金属有机配位聚合物,如PEDOT:PSS,TTF-TCNQ、PEDOT/PbTe和Poly[Kx(Ni-ett)]等。(O.Bubnova,Z.U.Khan,A.Malti,S.Braun,M.Fahlman,M.Berggren,X.Crispin,Nature Materials,10(2011)
429-433;E.Tamayo,K.Hayashi,T.Shinano,Y.Miyazaki,T.Kajitani,AppliedSurface Science,256(2010)4554-4558;Y.Wang,K.Cai,X.Yao,Acs Applied Materials&Interfaces,3(2011)1163-1166;Y.M.Sun,P.Sheng,C.A.Di,F.Jiao,W.Xu,D.Qiu,andD.B.Zhu,Advanced Materials,24(2012)932-937;Y.H.Sun,F.J.Zhang,P.Yue,C.A.Di,W.Xu,D.B.Zhu,Advanced Materials,28(2016)3351-3358)。
发明内容
本发明的目的是提供一种具有优异热电性能的高规整度聚噻吩薄膜。
本发明提供的制备聚噻吩薄膜的方法,包括如下步骤:
以噻吩单体、质子清除剂和电解液为原料,利用恒电流法制备得到所述聚噻吩薄膜。
上述方法中,质子清除剂为2,6-二叔丁基吡啶(DTBP);质子清除剂可以捕获电化学聚合过程中,噻吩环上脱下的质子;
所述电解液为三氟化硼的乙醚(BFEE)溶液;同时,三氟化硼乙醚溶液自身也可作为导电的支撑电解质;所述三氟化硼的乙醚(BFEE)溶液中,BF3的质量分数≥46.5%;可购自Sigma-Aldrich;
所用工作电极和对电极为导电金属片,具体可为不锈钢片;更具体可为304型不锈钢片;
所用参比电极为Ag/AgCl电极;
所述单体、质子清除剂和电解液的体积用量比为1:2.5-3:200-300mL;具体为1:2.9:250。
所述恒电流法中,电流密度为0.25mA cm-2-2mA cm-2;具体可为1mA cm-2;
时间为20-30分钟。
所述噻吩单体和组成电解液的化合物均进行除水氧处理。
所述除水氧处理的方法具体可为重蒸处理。
所用重蒸处理中,重蒸的方法均为常规方法。重蒸的目的是除去噻吩单体或组成电解液的化合物中的水氧。
具体的,重蒸噻吩单体的方法可为在氢化钙存在的条件下常压除水。噻吩与氢化钙的质量比为100:3-5;具体可为100:4;
重蒸组成电解液的化合物的方法具体可包括在氢化钙存在的条件下减压蒸馏;更具体可为先在50-70℃或60℃下加热搅拌3.5-4.5h或4h,再进行减压蒸馏;
另外,按照上述方法制备得到的聚噻吩薄膜,也属于本发明的保护范围。通过调控电化学聚合电流密度的大小,可以调控聚噻吩薄膜的结构形貌及其热电性能。研究发现,采用的电流密度为1mA cm-2时,具有最优的热电性能及近乎结晶的形貌。所制备的聚噻吩薄膜用红外、显微拉曼和固体核磁表征,规整度很高。用四探针法测试其电导率,电导率可达700S cm-1以上,Seebeck系数可达36μV K-1,功率因子为98.8±4.7μW m-1K-2;ZT值为0.09±0.01;电导率最高值为700S cm-1;Seebeck系数为36μV K-1;热导率为0.33W m-1K-1,具有很好的热电性能。。
另外,上述本发明提供的聚噻吩薄膜在制备热电器件中的应用,也属于本发明的保护范围。所述热电器件具体可为柔性热电器件。
本发明具有如下有益效果:
噻吩单体由于具有α和β两个活性位点,在电化学聚合过程中,往往会出现α-α,β-β,α-β三种链接方式,但是β-β,α-β这两种链接方式通常被认为是不太理想的,因为会降低噻吩链骨架的共轭程度和规整度。本发明用大位阻碱2,6-二叔丁基吡啶作为质子清除剂,严格控制电化学反应的水氧含量,利用恒电流法聚合噻吩单体,通过调控电流密度的大小,制得了α-α链接的高规整度聚噻吩,并具有近似结晶的纳米片层形貌,其ZT值接近0.1,是目前除了PEDOT之外p-型材料中热电性能最好的,具有很好的应用前景。
附图说明
图1为实施例1中1mA cm-2电流密度下制备的聚噻吩薄膜的固体核磁图谱。
图2为实施例中1mA cm-2电流密度下制备的聚噻吩薄膜的红外和拉曼图谱。
图3为实施例1中不同电流密度(a 0.25mAcm-2,b 0.5mA cm-2,c 1mA cm-2,d1.5mAcm-2,e 2mA cm-2)下的SEM和XRD图谱。
图4为实施例1中在1mA cm-2电流密度条件下制备的聚噻吩薄膜。
图5为实施例1中在不同电流密度下制备的聚噻吩薄膜的热电性能。
具体实施方式
下面结合具体实施例对本发明作进一步阐述,但本发明并不限于以下实施例。所述方法如无特别说明均为常规方法。所述原材料如无特别说明均能从公开商业途径获得。
实施例1、电化学法制备优异热电性能的高规整度聚噻吩薄膜
将4x 5cm2尺寸的普通304不锈钢片依次用1500目和2000目的砂纸打磨光滑,然后用洗涤灵洗去附着的油污,接着分别用三次水,乙醇和丙酮溶液超声洗涤30分钟,用氮气枪吹干。
由于三氟化硼乙醚对水敏感,噻吩易被氧化,因此三氟化硼乙醚和噻吩用于电化学反应之前均需要进行重蒸处理。三氟化硼乙醚溶液(BF3≥46.5%,购自Sigma-Aldrich)加入氢化钙(比例为500ml三氟化硼乙醚溶液加入5g氢化钙),60℃下加热搅拌4h,然后进行减压重蒸纯化,除去三氟化硼乙醚溶液中的水氧,进行密封储存。
将噻吩溶液中直接加入氢化钙,噻吩与氢化钙的质量比为100:4;常压下重蒸除水,取中间馏分,以确保所用噻吩单体是未被氧化的。2,6-二叔丁基吡啶则不做进一步处理。
将处理干净的两片4x5cm2尺寸的304不锈钢片子作为工作电极和对电极固定在如图1所示的电解池中,Ag/AgCl作为参比电极,然后将电解池、三氟化硼乙醚溶液,噻吩和2,6-二叔丁基吡啶均传送进手套箱中,将400μL的噻吩单体和1.17mL的2,6-二叔丁基吡啶加入100mL的三氟化硼乙醚溶液中,搅拌均匀。然后,采用恒电流法聚合,施加电流为10mA,20mA,40mA,60mA,80mA,相应的电流密度依次为0.25mA cm-2、0.5mA cm-2、1mA cm-2、1.5mAcm-2和2mA cm-2,聚合时间控制为30分钟。
将聚合所得的聚噻吩薄膜取出,用丙酮浸泡10min洗去聚噻吩薄膜上的三氟化硼乙醚溶液,然后在真空干燥箱中干燥30分钟,然后取出在防潮柜中保存。该薄膜的厚度为8-10μm。
用固体核磁、红外、显微拉曼光谱对聚噻吩薄膜内部结构进行表征,发现其规整程度很高,然后用扫描电子显微镜(SEM)和X射线衍射(XRD)去观察其形貌与分子链的堆积,所得结果均见于图1至图4。结果发现随着聚合电流密度的增大,聚噻吩薄膜π-π堆集峰增强,并且有很多近乎结晶的区域出现,说明电化学聚合过程的电流密度对其形貌有一定的调控作用。
聚噻吩薄膜蒸镀300nm厚的条状金电极,金电极间距为1mm,电导率用四探针法测试;将聚噻吩薄膜裁成2x 5mm左右尺寸的条状,两端蒸镀300nm的金,进行塞贝克系数的测试。
将聚噻吩薄膜切成纤维状,悬空粘在四根铜丝电极上,用3ω法测试其热导率。
图5为实施例1中在不同电流密度下制备的聚噻吩薄膜的热电性能。
由图可知,电流密度为1mA cm-2时所得聚噻吩薄膜的热电性能最好,具体如表1所示,其ZT值接近0.1。
表1、聚噻吩薄膜的热电性能
由表1可知,在电流密度为1mA cm-2的聚合条件下,所制备的聚噻吩薄膜功率因子可达100μW m-1K-2左右,其ZT值接近0.1,是目前除PEDOT外的p-型热电材料中,热电性能最好的导电聚合物,具有很好的应用前景。
Claims (10)
1.一种制备聚噻吩薄膜的方法,包括如下步骤:
以噻吩单体、质子清除剂和电解液为原料,利用恒电流法制备得到所述聚噻吩薄膜;
所述质子清除剂为2,6-二叔丁基吡啶;
所述电解液为三氟化硼的乙醚溶液;
所用工作电极和对电极为导电金属片或不锈钢片;
所用参比电极为Ag/AgCl电极;
所述单体、质子清除剂和电解液的体积用量比为1:2.5-3:200-300mL;
所述恒电流法中,电流密度为0.25 mA cm-2-2mA cm-2;
时间为20-30分钟。
2.根据权利要求1所述的方法,其特征在于:所述单体、质子清除剂和电解液的体积用量比为1:2.9:250。
3. 根据权利要求1所述的方法,其特征在于:所述恒电流法中,电流密度为1mA cm-2;
时间为20-30分钟。
4.根据权利要求1-3中任一所述的方法,其特征在于:所述噻吩单体和组成电解液的化合物均进行除水氧处理。
5.根据权利要求4所述的方法,其特征在于:所述除水氧处理的方法为重蒸。
6.根据权利要求5所述的方法,其特征在于:重蒸噻吩单体的方法为在氢化钙存在的条件下常压除水;
重蒸组成电解液的化合物的方法包括在氢化钙存在的条件下减压蒸馏。
7.权利要求1-6中任一所述方法制备得到的聚噻吩薄膜。
8. 根据权利要求7所述的聚噻吩薄膜,其特征在于:在1 mA cm-2电流密度条件下,所述聚噻吩薄膜的功率因子为98.8±4.7 μW m-1 K-2;ZT值为0.09±0.01;电导率最高值为700S cm-1;Seebeck系数为36 μV K-1;热导率为0.33 W m-1 K-1;
所述聚噻吩薄膜的厚度为8-10μm。
9.权利要求7或8所述聚噻吩薄膜在制备热电器件中的应用。
10.根据权利要求9所述的应用,其特征在于:所述热电器件为柔性热电器件。
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