CN1083870A - 单向场发生器 - Google Patents

单向场发生器 Download PDF

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Publication number
CN1083870A
CN1083870A CN93108156A CN93108156A CN1083870A CN 1083870 A CN1083870 A CN 1083870A CN 93108156 A CN93108156 A CN 93108156A CN 93108156 A CN93108156 A CN 93108156A CN 1083870 A CN1083870 A CN 1083870A
Authority
CN
China
Prior art keywords
permanent magnet
cabin
magneticsubstance
magnetic
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN93108156A
Other languages
English (en)
Chinese (zh)
Inventor
华-钦·冬
约翰·J·纽曼
宏-山·J·吴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Read Rite Corp
Original Assignee
Read Rite Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Read Rite Corp filed Critical Read Rite Corp
Publication of CN1083870A publication Critical patent/CN1083870A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Magnetic Films (AREA)
  • Plasma Technology (AREA)
  • Magnetic Heads (AREA)
CN93108156A 1992-07-10 1993-07-09 单向场发生器 Pending CN1083870A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/911,457 1992-07-10
US07/911,457 US5290416A (en) 1992-07-10 1992-07-10 Unidirectional field generator

Publications (1)

Publication Number Publication Date
CN1083870A true CN1083870A (zh) 1994-03-16

Family

ID=25430264

Family Applications (1)

Application Number Title Priority Date Filing Date
CN93108156A Pending CN1083870A (zh) 1992-07-10 1993-07-09 单向场发生器

Country Status (6)

Country Link
US (1) US5290416A (US20100056889A1-20100304-C00004.png)
EP (1) EP0579114A1 (US20100056889A1-20100304-C00004.png)
JP (1) JPH06224065A (US20100056889A1-20100304-C00004.png)
KR (1) KR940002873A (US20100056889A1-20100304-C00004.png)
CN (1) CN1083870A (US20100056889A1-20100304-C00004.png)
TW (1) TW237550B (US20100056889A1-20100304-C00004.png)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5804041A (en) * 1996-06-10 1998-09-08 Sony Corporation Method and apparatus for forming a magnetically oriented thin film
US6545580B2 (en) 1998-09-09 2003-04-08 Veeco Instruments, Inc. Electromagnetic field generator and method of operation
FR2838020B1 (fr) * 2002-03-28 2004-07-02 Centre Nat Rech Scient Dispositif de confinement de plasma
US7750522B2 (en) * 2006-07-18 2010-07-06 Danotek Motion Technologies Slow-speed direct-drive generator
US11488814B2 (en) * 2018-10-29 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Permeance magnetic assembly

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4963524A (en) * 1987-09-24 1990-10-16 Semiconductor Energy Laboratory Co., Ltd. Sputtering device for manufacturing superconducting oxide material and method therefor
JPH0649937B2 (ja) * 1987-12-17 1994-06-29 株式会社日立製作所 磁性膜形成装置
JPH0814021B2 (ja) * 1989-07-20 1996-02-14 松下電器産業株式会社 スパッタ装置
US5045166A (en) * 1990-05-21 1991-09-03 Mcnc Magnetron method and apparatus for producing high density ionic gas discharge

Also Published As

Publication number Publication date
EP0579114A1 (en) 1994-01-19
KR940002873A (ko) 1994-02-19
JPH06224065A (ja) 1994-08-12
US5290416A (en) 1994-03-01
TW237550B (US20100056889A1-20100304-C00004.png) 1995-01-01

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C01 Deemed withdrawal of patent application (patent law 1993)
WD01 Invention patent application deemed withdrawn after publication