CN108385168A - A kind of method of surface of crystalline silicon making herbs into wool - Google Patents
A kind of method of surface of crystalline silicon making herbs into wool Download PDFInfo
- Publication number
- CN108385168A CN108385168A CN201810161287.4A CN201810161287A CN108385168A CN 108385168 A CN108385168 A CN 108385168A CN 201810161287 A CN201810161287 A CN 201810161287A CN 108385168 A CN108385168 A CN 108385168A
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- CN
- China
- Prior art keywords
- preset energy
- energy value
- wool
- making herbs
- set current
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/12—Etching in gas atmosphere or plasma
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention discloses a kind of method of surface of crystalline silicon making herbs into wool, this method includes：It provides one and waits for making herbs into wool silicon chip；Making herbs into wool silicon chip surface is treated using the inert gas of the first preset energy value and the first pre-set current value and carries out first time bombardment processing；Making herbs into wool silicon chip surface is treated using the inert gas of the second preset energy value and the second pre-set current value and carries out second of bombardment processing；Making herbs into wool silicon chip surface is treated using the inert gas of third preset energy value and third pre-set current value and carries out third time bombardment processing；Wherein, the first preset energy value is more than the second preset energy value and is more than third preset energy value, and the first pre-set current value is more than the second preset energy value and is more than third preset energy value.This method by inert gas ion inject in the way of surface of crystalline silicon is bombarded, can react to avoid with silicon, prevent the variation of silicon material character itself, and can easily be integrated on current production line, it is pollution-free and at low cost.
Description
Technical field
The present invention relates to crystal silicon cell technical fields, more specifically more particularly to a kind of surface of crystalline silicon making herbs into wool
Method.
Background technology
With the continuous development of science and technology, silica-based solar cell has been widely used in daily life and work
In industry.
Since surface wool manufacturing technique can improve order of reflection of the light in silicon substrate, the probability of light escape is reduced, in turn
Increase the absorption of light and improve efficiency, therefore surface wool manufacturing technique can improve the efficiency of silica-based solar cell.
In existing photovoltaic industry, making herbs into wool processing is carried out to silicon chip surface using traditional wet-method etching or dry method making herbs into wool；Its
In, wet-method etching is realized by using with corrosive chemical substance KOH and NaOH；Dry method making herbs into wool comes by using RIE
It realizes；RIE (Reactive Ion Etching, reactive ion etching), by between plate electrode apply 10MHZ~
When the high frequency voltage of 100MHZ generate hundreds of microns thickness sheath, be put into sample wherein, ion high-speed impact sample and it is complete
It is etched at chemical reaction.
But the mode of wet-method etching, such as chemical substance KOH and NaOH can not be removed because of table caused by silicon chip cutting
It pollutes in face；And the mode cost of dry method making herbs into wool is very high, can not be widely used in the photovoltaic industry of the requirement to reduce cost
In.
Invention content
To solve the above problems, the present invention provides a kind of method of surface of crystalline silicon making herbs into wool, this method utilizes indifferent gas
The mode of body ion implanting bombards surface of crystalline silicon, can react to avoid with silicon, prevent silicon material character itself
Variation, and can easily be integrated on current production line, it is pollution-free and at low cost.
To achieve the above object, the present invention provides the following technical solutions：
A kind of method of surface of crystalline silicon making herbs into wool, the method includes：
It provides one and waits for making herbs into wool silicon chip；
Using the inert gas of the first preset energy value and the first pre-set current value to the surface for waiting for making herbs into wool silicon chip
Carry out first time bombardment processing；
Using the inert gas of the second preset energy value and the second pre-set current value to the surface for waiting for making herbs into wool silicon chip
Carry out second of bombardment processing；
Using the inert gas of third preset energy value and third pre-set current value to the surface for waiting for making herbs into wool silicon chip
Carry out third time bombardment processing；
Wherein, the first preset energy value is more than the second preset energy value and is more than the third preset energy value,
First pre-set current value is more than the second preset energy value and is more than the third preset energy value.
Preferably, in the above-mentioned methods, the inert gas is argon gas.
Preferably, in the above-mentioned methods, the first preset energy value is more than 200KeV.
Preferably, in the above-mentioned methods, the second preset energy value is less than 200KeV, and the second preset energy value
More than 100KeV.
Preferably, in the above-mentioned methods, the third preset energy value is less than 10KeV.
Preferably, in the above-mentioned methods, first pre-set current value is more than 200uA.
Preferably, in the above-mentioned methods, second pre-set current value is less than 200uA, and second pre-set current value
More than 100uA.
Preferably, in the above-mentioned methods, the third pre-set current value is less than 1uA.
By foregoing description it is found that a kind of method of surface of crystalline silicon making herbs into wool provided by the invention includes：One is provided to wait making
Suede silicon chip；Using the inert gas of the first preset energy value and the first pre-set current value to the surface for waiting for making herbs into wool silicon chip into
Row first time bombardment processing；Making herbs into wool silicon is waited for described using the inert gas of the second preset energy value and the second pre-set current value
The surface of piece carries out second of bombardment processing；Using the inert gas of third preset energy value and third pre-set current value to institute
It states and waits for that the surface of making herbs into wool silicon chip carries out third time bombardment processing；Wherein, it is default to be more than described second for the first preset energy value
Energy value is more than the third preset energy value, and first pre-set current value is more than the second preset energy value more than described
Third preset energy value.
This method by inert gas ion inject in the way of surface of crystalline silicon is bombarded, can occur to avoid with silicon
Reaction, prevents the variation of silicon material character itself, and can easily be integrated on current production line, pollution-free and cost
It is low.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of flow diagram of the method for surface of crystalline silicon making herbs into wool provided in an embodiment of the present invention.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
With reference to figure 1, Fig. 1 is a kind of flow diagram of the method for surface of crystalline silicon making herbs into wool provided in an embodiment of the present invention.
The method includes：
S101：It provides one and waits for making herbs into wool silicon chip.
Specifically, described wait for that making herbs into wool silicon chip includes but is not limited to monocrystal silicon substrate.
S102：Using the inert gas of the first preset energy value and the first pre-set current value to the making herbs into wool silicon chip that waits for
Surface carries out first time bombardment processing.
Specifically, being more than 200KeV using the first preset energy value, first pre-set current value is more than 200uA's
The surface that making herbs into wool silicon chip is waited for described in inert gas bombardment, for removing the stained and damaged portion for waiting for making herbs into wool silicon chip surface.
It should be noted that the value of the first preset energy value and first pre-set current value are in the embodiment of the present invention
In and be not construed as limiting, can as the case may be depending on.
S103：Using the inert gas of the second preset energy value and the second pre-set current value to the making herbs into wool silicon chip that waits for
Surface carries out second of bombardment processing.
It is more than specifically, being less than 200KeV and the second preset energy value using the second preset energy value
100KeV, second pre-set current value is less than 200uA and second pre-set current value is more than the inert gas second of 100uA
The surface that making herbs into wool silicon chip is waited for described in secondary bombardment, for making matte silicon chip.
It should be noted that the value of the second preset energy value and second pre-set current value are in the embodiment of the present invention
In and be not construed as limiting, can as the case may be depending on.
S104：Using the inert gas of third preset energy value and third pre-set current value to the making herbs into wool silicon chip of waiting for
Surface carries out third time bombardment processing.
Specifically, being less than 10KeV using the third preset energy value, the third pre-set current value is lazy less than 1uA's
Property gas third time bombardment described in wait for the surface of making herbs into wool silicon chip, for optimizing matte silicon chip.
Wherein, the first preset energy value is more than the second preset energy value and is more than the third preset energy value,
First pre-set current value is more than the second preset energy value and is more than the third preset energy value.
It should be noted that the value of the third preset energy value and the third pre-set current value are in the embodiment of the present invention
In and be not construed as limiting, can as the case may be depending on.
Further, the inert gas includes but is not limited to argon gas.
Further, include but is not limited to the mode of ion implanting in such a way that inert gas bombards silicon chip surface.
Specifically, ion implantation device can be integrated in easily on current solar cell production line, solar cell
Intermediate ion injection is commonly used in the doping for carrying out silicon chip, so that it is sent out required inert gas by change ion source i.e. reachable
To the purpose of silicon wafer wool making, therefore it can realize silicon wafer wool making under conditions of cost free.
Also, this method by inert gas ion inject in the way of surface of crystalline silicon is bombarded, can to avoid with
Silicon reacts, and prevents the variation of silicon material character itself, pollution-free and at low cost.
Also, after the completion of silicon chip surface making herbs into wool, the phosphorus diffusion used in battery emitter will also realize that directly through the ion
Injection device is realized, the production time of solar cell is made to reduce, and reduces production cost.
It should be noted that in embodiments of the present invention, by the way of mask plate, that is, waiting for that the surface of making herbs into wool silicon chip puts
Set mask plate, realized by way of ion implanting inert gas on the surface for waiting for making herbs into wool silicon chip according to the shape of mask plate needed for
Antiradar reflectivity matte.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest range caused.
Claims (8)
1. a kind of method of surface of crystalline silicon making herbs into wool, which is characterized in that the method includes：
It provides one and waits for making herbs into wool silicon chip；
The surface for waiting for making herbs into wool silicon chip is carried out using the inert gas of the first preset energy value and the first pre-set current value
First time bombardment processing；
The surface for waiting for making herbs into wool silicon chip is carried out using the inert gas of the second preset energy value and the second pre-set current value
Second of bombardment processing；
The surface for waiting for making herbs into wool silicon chip is carried out using the inert gas of third preset energy value and third pre-set current value
Third time bombardment processing；
Wherein, the first preset energy value is more than the second preset energy value and is more than the third preset energy value, described
First pre-set current value is more than the second preset energy value and is more than the third preset energy value.
2. according to the method described in claim 1, it is characterized in that, the inert gas is argon gas.
3. according to the method described in claim 1, it is characterized in that, the first preset energy value is more than 200KeV.
4. and described according to the method described in claim 1, it is characterized in that, the second preset energy value is less than 200KeV
Second preset energy value is more than 100KeV.
5. according to the method described in claim 1, it is characterized in that, the third preset energy value is less than 10KeV.
6. according to the method described in claim 1, it is characterized in that, first pre-set current value is more than 200uA.
7. according to the method described in claim 1, it is characterized in that, second pre-set current value is less than 200uA, and described the
Two pre-set current values are more than 100uA.
8. according to the method described in claim 1, it is characterized in that, the third pre-set current value is less than 1uA.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810161287.4A CN108385168A (en) | 2018-02-27 | 2018-02-27 | A kind of method of surface of crystalline silicon making herbs into wool |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810161287.4A CN108385168A (en) | 2018-02-27 | 2018-02-27 | A kind of method of surface of crystalline silicon making herbs into wool |
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| Publication Number | Publication Date |
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| CN108385168A true CN108385168A (en) | 2018-08-10 |
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| CN201810161287.4A Pending CN108385168A (en) | 2018-02-27 | 2018-02-27 | A kind of method of surface of crystalline silicon making herbs into wool |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112349812A (en) * | 2020-10-27 | 2021-02-09 | 武汉新芯集成电路制造有限公司 | Preparation method of silicon wafer surface textured structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751380A (en) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | Texturization technology of solar battery |
| CN102820370A (en) * | 2011-06-08 | 2012-12-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Texture surface making treatment method for silicon wafer |
| CN103390696A (en) * | 2013-08-12 | 2013-11-13 | 江苏宇兆能源科技有限公司 | RIE (reactive ion etching) technology of solar cell surface structure |
| CN105047764A (en) * | 2015-09-01 | 2015-11-11 | 浙江晶科能源有限公司 | Silicon chip texturing method |
-
2018
- 2018-02-27 CN CN201810161287.4A patent/CN108385168A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820370A (en) * | 2011-06-08 | 2012-12-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Texture surface making treatment method for silicon wafer |
| CN102751380A (en) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | Texturization technology of solar battery |
| CN103390696A (en) * | 2013-08-12 | 2013-11-13 | 江苏宇兆能源科技有限公司 | RIE (reactive ion etching) technology of solar cell surface structure |
| CN105047764A (en) * | 2015-09-01 | 2015-11-11 | 浙江晶科能源有限公司 | Silicon chip texturing method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112349812A (en) * | 2020-10-27 | 2021-02-09 | 武汉新芯集成电路制造有限公司 | Preparation method of silicon wafer surface textured structure |
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Application publication date: 20180810 |