CN112349812A - Preparation method of silicon wafer surface textured structure - Google Patents
Preparation method of silicon wafer surface textured structure Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 129
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 127
- 239000010703 silicon Substances 0.000 title claims abstract description 127
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000003513 alkali Substances 0.000 claims abstract description 34
- 238000005530 etching Methods 0.000 claims abstract description 23
- 238000005468 ion implantation Methods 0.000 claims abstract description 17
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 28
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 27
- 239000000243 solution Substances 0.000 claims description 17
- 238000001020 plasma etching Methods 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 11
- 239000012670 alkaline solution Substances 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 9
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 230000031700 light absorption Effects 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 229910021418 black silicon Inorganic materials 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- -1 phosphorus ions Chemical class 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- WQDUMFSSJAZKTM-UHFFFAOYSA-N Sodium methoxide Chemical compound [Na+].[O-]C WQDUMFSSJAZKTM-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- ZCSHNCUQKCANBX-UHFFFAOYSA-N lithium diisopropylamide Chemical compound [Li+].CC(C)[N-]C(C)C ZCSHNCUQKCANBX-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MFKRHJVUCZRDTF-UHFFFAOYSA-N 3-methoxy-3-methylbutan-1-ol Chemical compound COC(C)(C)CCO MFKRHJVUCZRDTF-UHFFFAOYSA-N 0.000 description 1
- 229920002567 Chondroitin Polymers 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- DLGJWSVWTWEWBJ-HGGSSLSASA-N chondroitin Chemical compound CC(O)=N[C@@H]1[C@H](O)O[C@H](CO)[C@H](O)[C@@H]1OC1[C@H](O)[C@H](O)C=C(C(O)=O)O1 DLGJWSVWTWEWBJ-HGGSSLSASA-N 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 229940090960 diethylenetriamine pentamethylene phosphonic acid Drugs 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- AFRJJFRNGGLMDW-UHFFFAOYSA-N lithium amide Chemical class [Li+].[NH2-] AFRJJFRNGGLMDW-UHFFFAOYSA-N 0.000 description 1
- YNESATAKKCNGOF-UHFFFAOYSA-N lithium bis(trimethylsilyl)amide Chemical compound [Li+].C[Si](C)(C)[N-][Si](C)(C)C YNESATAKKCNGOF-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- NHKJPPKXDNZFBJ-UHFFFAOYSA-N phenyllithium Chemical compound [Li]C1=CC=CC=C1 NHKJPPKXDNZFBJ-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- RPDAUEIUDPHABB-UHFFFAOYSA-N potassium ethoxide Chemical compound [K+].CC[O-] RPDAUEIUDPHABB-UHFFFAOYSA-N 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 description 1
- 235000010234 sodium benzoate Nutrition 0.000 description 1
- 239000004299 sodium benzoate Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
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Abstract
The invention provides a preparation method of a silicon wafer surface textured structure, which comprises the following steps: providing a silicon wafer, and carrying out pretreatment of maskless etching and/or maskless ion implantation on the surface of the silicon wafer to roughen the surface of the silicon wafer; and performing alkali texturing on the roughened surface of the silicon wafer to form a pyramid textured structure on the roughened surface of the silicon wafer. The silicon wafer is pretreated to roughen the surface of the silicon wafer, so that the subsequent alkali texturing process is facilitated, and more pyramid textured structures are formed on the roughened surface of the silicon wafer; and finally forming a pyramid textured structure on the roughened surface of the silicon wafer through anisotropic etching of alkali texturing and alkali etching. The method of the invention does not need a mask, simplifies the process, forms uniform suede structures, has more prepared pyramid structures and good light absorption effect, and is suitable for large-scale mass production.
Description
Technical Field
The invention belongs to the technical field of integrated circuit manufacturing, and particularly relates to a preparation method of a silicon wafer surface textured structure.
Background
For silicon-based semiconductor devices (e.g., optoelectronic devices), the surface reflectivity of silicon is high, and if the silicon surface is not treated, the reflectivity of the silicon can reach over 40% for visible light and over 60% for near-infrared light. The crystalline silicon has such high reflectivity to light that the quantum efficiency of the related photoelectric device prepared by the crystalline silicon is not ideal, and the application field and the use performance of the photoelectric product are finally seriously reduced.
The principle of the application of optoelectronic chips is the absorption of light by the material. However, the absorption of light by the material is conditional. Only if the light wave has energy greater than the forbidden band width will the material absorb light. The absorption efficiency of crystalline silicon to photons is gradually reduced from visible light to near infrared light, and the problem of absorption of photons by silicon becomes more and more prominent as light waves are from visible light to near infrared light, and attention of engineering technicians are required to be paid. The absorption efficiency of the material for photons can be improved by increasing the thickness of silicon, but the increase of the thickness of silicon brings huge challenges to the semiconductor process, and the silicon is not cost-effective.
People often prepare various 'suede' structures, such as pyramid arrays, on the silicon surface, and the structures can increase the reflection times of light on the Si surface, so as to enhance the capture capacity of the silicon surface to incident light energy, namely reduce the reflection loss of the light energy and improve the absorption and conversion efficiency of devices to the light. The silicon surface thus prepared is generally black and is commonly referred to as "black silicon".
The existing method for preparing black silicon, for example, the method for preparing black silicon by adopting a femtosecond laser, has the problems of more complex process, more complicated process control, low efficiency, high cost and the like.
Disclosure of Invention
The invention aims to provide a preparation method of a silicon wafer surface texture structure, which does not need a mask, simplifies the process, forms a uniform texture structure, and has a large number of prepared pyramid structures and a good light absorption effect.
The invention provides a preparation method of a silicon wafer surface textured structure, which comprises the following steps:
providing a silicon wafer, and carrying out pretreatment of maskless etching and/or maskless ion implantation on the surface of the silicon wafer to roughen the surface of the silicon wafer;
and performing alkali texturing on the roughened surface of the silicon wafer to form a pyramid textured structure on the roughened surface of the silicon wafer.
Furthermore, the pyramid suede structure is distributed in a regular rectangular pyramid array.
Furthermore, the side surface of the regular rectangular pyramid is a {111} crystal plane family, and the bottom surface is a (100) crystal plane.
Further, in the step of alkali texturing the roughened surface of the silicon wafer, the silicon wafer is placed in an alkali solution and kept for 600 to 2500 seconds, and the temperature is set to be 80 to 88 ℃.
Further, the alkali solution comprises at least one of TMAH, ammonia water, KOH and NaOH.
Further, the alkali solution includes: 1-3% of sodium hydroxide aqueous solution or potassium hydroxide aqueous solution.
Further, the maskless etching is plasma etching or non-plasma etching.
Further, the gas used for plasma etching comprises: SF6、C4F8And Ar, and said SF6The gas flow is 70 sccm-140 sccm, C4F8The gas flow is 75sccm to 100sccm, and the Ar gas flow is 15sccm to 45 sccm.
Further, in the maskless ion implantation, an inclination angle of the ion implantation is in a range of more than 15 degrees and less than or equal to 75 degrees with reference to a vertical plane perpendicular to the surface of the silicon wafer.
Furthermore, in the maskless ion implantation, the implantation energy range of the ions is 5 keV-45 keV, and the implantation dosage range of the ions is 5 multiplied by 1014ions/cm2～1×1016ions/cm2。
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a preparation method of a silicon wafer surface textured structure, which comprises the following steps: providing a silicon wafer, and carrying out pretreatment of maskless etching and/or maskless ion implantation on the surface of the silicon wafer to roughen the surface of the silicon wafer; and performing alkali texturing on the roughened surface of the silicon wafer to form a pyramid textured structure on the roughened surface of the silicon wafer. The silicon wafer is pretreated to roughen the surface of the silicon wafer, so that the subsequent alkali texturing process is facilitated, and more pyramid textured structures are formed on the roughened surface of the silicon wafer; and finally forming a pyramid textured structure on the roughened surface of the silicon wafer through anisotropic etching of alkali texturing and alkali etching. The method of the invention does not need a mask, simplifies the process, forms a uniform suede structure, reduces the light reflectivity of the device, improves the performance of the device, has more prepared pyramid structures and good light absorption effect, is suitable for large-scale mass production, and improves the stability of the processing process.
Drawings
Fig. 1 is a flow chart of a method for manufacturing a textured structure on a surface of a silicon wafer according to an embodiment of the invention.
Fig. 2 is a schematic diagram of pretreatment in the preparation method of the silicon wafer surface textured structure according to the embodiment of the invention.
Fig. 3 is a schematic diagram of the silicon wafer surface textured structure after alkali texturing in the preparation method of the silicon wafer surface textured structure according to the embodiment of the invention.
Wherein the reference numbers are as follows:
10-a silicon wafer; v-grooves.
Detailed Description
Based on the research, the embodiment of the invention provides a preparation method of a textured structure on the surface of a silicon wafer. The invention is described in further detail below with reference to the figures and specific examples. The advantages and features of the present invention will become more apparent from the following description. It is to be noted, however, that the drawings are designed in a simplified form and are not to scale, but rather are to be construed as providing convenient and clear illustrations of some embodiments of the invention.
The embodiment of the invention provides a preparation method of a textured structure on the surface of a silicon wafer, which comprises the following steps of:
step S1, providing a silicon wafer, and carrying out pretreatment of maskless etching and/or maskless ion implantation on the surface of the silicon wafer to roughen the surface of the silicon wafer;
and step S2, alkali texturing is carried out on the roughened surface of the silicon wafer, so that a pyramid textured structure is formed on the roughened surface of the silicon wafer.
Specifically, the silicon wafer is a monocrystalline silicon wafer or a polycrystalline silicon wafer. As shown in fig. 2, the surface of the silicon wafer is roughened by performing a pretreatment of maskless etching and/or maskless ion implantation. In the pre-treatment process, the maskless etching is plasma etching or non-plasma etching. If the plasma etching is adopted to increase the surface roughness of the silicon wafer, the gas adopted by the plasma etching comprises the following gases: SF6、C4F8And Ar, and said SF6The gas flow is 70 sccm-140 sccm, C4F8The gas flow is 75sccm to 100sccm, and the Ar gas flow is 15sccm to 45 sccm. The pretreatment increases the roughness of the surface of the silicon wafer, and is beneficial to the subsequent alkali texturing process, so that more pyramid textured structures are formed on the roughened surface of the silicon wafer, namely, the generation of black silicon is accelerated. If non-plasma etching is adopted to increase the roughness of the surface of the silicon wafer, the non-plasma etching comprises wet etching, dry etching and etching of physical, chemical and electrochemical methods capable of generating a micro concave-convex structure on the surface of the silicon.
In the maskless ion implantation, the silicon wafer type of the silicon wafer is an N-type silicon wafer and the ions are phosphorus ions, or the silicon wafer type of the silicon wafer is a P-type silicon wafer and the ions are boron ions. The implantation energy of the ions is 5 keV-45 keV, and the implantation dosage of the ions is 5 x 1014ions/cm2～1×1016 ions/cm2。
In one embodiment, the surface roughness of the silicon wafer can be adjusted by inclined ion implantation, for example, the inclined angle of the ion implantation is in a range of 15 degrees or more and 75 degrees or less based on a vertical plane perpendicular to the surface of the silicon wafer, so as to increase the surface roughness of the silicon wafer.
In the embodiment, the surface of the silicon wafer is directly subjected to maskless etching and/or maskless ion implantation pretreatment, and the roughness of the surface of the silicon wafer can be increased under the condition of no mask by adjusting and selecting proper process parameters.
As shown in fig. 3, alkali texturing is performed on the roughened surface of the silicon wafer to form a pyramid textured structure on the roughened surface of the silicon wafer. The texturing is to reduce light reflection by utilizing a light trapping principle, form secondary absorption or multiple absorption of light, and remove a mechanical damage layer on the surface of a silicon wafer and residual metal impurities on porous silicon and the silicon wafer in the texturing process.
Specifically, the roughened silicon wafer is placed in an alkali solution and kept for 600-2500 seconds, and the temperature is set to be 80-88 ℃. The alkaline solution comprises at least one of TMAH, ammonia water, KOH and NaOH. The alkali solution may further include: a texturing additive. In one embodiment, the alkaline solution is a mixture of TMAH and ammonia. In another embodiment, the alkali solution comprises 1-3% by weight of an aqueous sodium hydroxide solution or an aqueous potassium hydroxide solution.
In other embodiments, the roughened surface of the silicon wafer is subjected to alkali texturing, a texturing solution is a mixed solution of KOH, a texturing additive and deionized water, the volume concentration of the KOH is 3%, and the texturing time is 600-1000 seconds. Exemplary, formulation of texturing additives: sequentially mixing the following substances in percentage by mass: chondroitin sulfate-poly (vinyl pyrrolidone-vinyl pyridine) copolymer 6%, diethylene triamine penta methylene phosphonic acid pentasodium 0.1%, 3-methoxy-3-methyl-1-butanol 3%, sodium benzoate 1% are dissolved in the balance of water and mixed evenly. Preparing a texturing solution: adding the texturing additive into an alkali solution, and uniformly mixing; the mass ratio of the texturing additive to the alkali solution is 1: 100, the alkali solution is sodium hydroxide aqueous solution with the mass fraction of 1 to 3 percent. And putting the silicon wafer into the prepared texturing solution for texturing, wherein the texturing temperature is 80-88 ℃, and the texturing time is 600-2500 seconds.
The alkaline solution can be inorganic alkaline solution, and the nano-scale texture surface is modified and reconstructed by the anisotropic reaction characteristics of the alkaline solution and the silicon wafer so as to form a submicron-scale pyramid structure. The solvent of the basic solution may be an organic base (for example, alkali metal salts of alcohols such as sodium methoxide and potassium ethoxide; lithium metal alkyls such as butyl lithium and phenyl lithium, or lithium amide compounds such as lithium diisopropylamide and lithium hexamethyldisilazide). The solute of the alkaline solution may be an inorganic alkaline substance (for example, an inorganic base such as sodium hydroxide, potassium hydroxide, or lithium hydroxide, or an alkaline inorganic salt such as sodium carbonate).
The alkaline solution is for example a solution of NaOH and/or KOH. The alkali concentration of the alkaline solution is 1-100 mmol/L.
As shown in fig. 3, a pyramid textured structure is formed on the surface of the silicon wafer, and the width of the cross section of the groove V is gradually reduced from the top to the bottom, so that incident light perpendicular to the silicon wafer is irradiated onto the side surface of the groove according to snell's law, is refracted to enter the silicon wafer, and is then totally reflected inside the silicon wafer. The optical path length in the silicon chip is expanded, the effective optical path length is prolonged along with the extension in the silicon chip, and the light absorption efficiency is increased. The reflection times of light in the silicon chip are increased, so that the capture capacity of the surface of the silicon chip on incident light energy is enhanced, namely, the reflection loss of the light energy is reduced, and the absorption and conversion efficiency of the device on the light is improved. The surface of the silicon wafer prepared by the method is generally black and is generally called as black silicon.
Taking a single crystal as an example, providing a silicon wafer 10 with a (100) crystal face on the surface, performing alkali texturing on the roughened surface of the silicon wafer, and performing anisotropic etching on the roughened surface of the silicon wafer through an alkali solution, wherein silicon atoms of different crystal faces in the etching solution have different etching speeds due to different atomic densities and activation energies, wherein the etching speed of the {111} crystal face group is the slowest, so that etching will end at four {111} crystal face groups on the silicon (100) crystal face, and finally, a pyramid regular square pyramid consisting of four {111} crystal face group side faces and one (100) bottom face is formed on the silicon surface. And when viewed from top, the pyramid suede structure is in a regular rectangular pyramid array shape. The structure has strong diffraction and anti-reflection effects, so that the optical path length in the silicon wafer is expanded, the effective optical path length is prolonged along with the extension in the silicon wafer, and the light absorption efficiency is improved.
The common bare silicon wafer is not subjected to pretreatment, the surface of the wafer is not rough enough, the corrosion efficiency is low, the number of prepared pyramids is small, the light absorption rate is not enough, and the corrosion efficiency and the number of the pyramids can be greatly improved after the pretreatment.
In summary, the present invention provides a method for preparing a textured structure on a surface of a silicon wafer, including: providing a silicon wafer, and carrying out maskless etching and/or pretreatment of maskless ion implantation on the surface of the silicon wafer to roughen the surface of the silicon wafer; and performing alkali texturing on the roughened surface of the silicon wafer to form a pyramid textured structure on the roughened surface of the silicon wafer. The silicon wafer is subjected to pretreatment, so that the surface of the silicon wafer is roughened, a subsequent alkali texturing process is facilitated, and more pyramid textured structures are formed on the roughened surface of the silicon wafer; and finally forming a pyramid textured structure on the roughened surface of the silicon wafer through anisotropic etching of alkali texturing and alkali etching. The method of the invention does not need a mask, simplifies the process, forms uniform suede structures, has more pyramid structures and good light absorption effect, and is suitable for large-scale mass production. The method has high efficiency and low cost, and can be integrated with other micromachining processes.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. For the method disclosed by the embodiment, the description is relatively simple because the method corresponds to the device disclosed by the embodiment, and the relevant points can be referred to the description of the method part.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A preparation method of a silicon wafer surface textured structure is characterized by comprising the following steps:
providing a silicon wafer, and carrying out pretreatment of maskless etching and/or maskless ion implantation on the surface of the silicon wafer to roughen the surface of the silicon wafer;
and performing alkali texturing on the roughened surface of the silicon wafer to form a pyramid textured structure on the roughened surface of the silicon wafer.
2. The method for preparing the textured structure on the surface of the silicon wafer according to claim 1, wherein the pyramid textured structure is distributed in a regular rectangular pyramid array.
3. The method for preparing the textured structure on the surface of the silicon wafer according to claim 2, wherein the side surface of the regular rectangular pyramid is a {111} crystal plane family, and the bottom surface is a (100) crystal plane.
4. The method for preparing the textured structure on the surface of the silicon wafer according to claim 1, wherein in the step of subjecting the roughened surface of the silicon wafer to alkali texturing, the silicon wafer is placed in an alkali solution and is kept for 600 to 2500 seconds, and the temperature is set to 80 to 88 ℃.
5. The method for preparing a textured structure on the surface of a silicon wafer according to claim 4, wherein the alkaline solution comprises at least one of TMAH, ammonia, KOH and NaOH.
6. The method for preparing a textured structure on the surface of a silicon wafer according to claim 4, wherein the alkaline solution comprises: 1-3% of sodium hydroxide aqueous solution or potassium hydroxide aqueous solution.
7. The method for preparing the textured structure on the surface of the silicon wafer according to claim 1, wherein the maskless etching is plasma etching or non-plasma etching.
8. The method for preparing the textured structure on the surface of the silicon wafer according to claim 7, wherein the gas adopted by the plasma etching comprises: SF6、C4F8And Ar, and said SF6The gas flow is 70 sccm-140 sccm, C4F8The gas flow is 75sccm to 100sccm, and the Ar gas flow is 15sccm to 45 sccm.
9. The method for preparing the textured structure on the surface of the silicon wafer according to claim 1, wherein in the maskless ion implantation, an inclination angle of the ion implantation is in a range of 15 degrees or more and 75 degrees or less with reference to a vertical plane perpendicular to the surface of the silicon wafer.
10. The method for preparing textured structure on the surface of silicon wafer according to claim 1, wherein in the maskless ion implantation, the implantation energy range of the ions is 5 keV-45 keV, and the implantation dosage range of the ions is 5 x 1014ions/cm2～1×1016ions/cm2。
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