CN106548935A - The method for making black silicon layer - Google Patents
The method for making black silicon layer Download PDFInfo
- Publication number
- CN106548935A CN106548935A CN201611008395.5A CN201611008395A CN106548935A CN 106548935 A CN106548935 A CN 106548935A CN 201611008395 A CN201611008395 A CN 201611008395A CN 106548935 A CN106548935 A CN 106548935A
- Authority
- CN
- China
- Prior art keywords
- silicon layer
- black silicon
- silicon
- silicon face
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000001020 plasma etching Methods 0.000 claims abstract description 9
- 230000005764 inhibitory process Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 230000000694 effects Effects 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Optical Elements Other Than Lenses (AREA)
- Laminated Bodies (AREA)
Abstract
The step of a kind of method for making black silicon layer, methods described is：1）Using reactive ion etching machine, in SF6And O2Silicon face is performed etching under atmosphere, make silicon face form matte；2）Using plasma etching machine, in Cl2And O2Silicon face is performed etching under atmosphere, the silicon face roughness on matte is further increased, so as to obtain black silicon layer；3）Silicon face is cleaned using dilute hydrofluoric acid solution, black silicon layer completes.The method have the benefit that：A kind of method for making black silicon layer is proposed, the black silicon layer gash depth that the method is produced is larger, the inhibition to reflecting is preferable.
Description
Technical field
The present invention relates to a kind of black silicon manufacturing technology, more particularly to a kind of method for making black silicon layer.
Background technology
Black silicon material is higher to the absorbance of near ultraviolet-near infrared band, reflectance is relatively low, compared to traditional silicon based opto-electronicses
Sensitive detection parts, the photodetector using black silicon material are more notable to the responsiveness of near infrared band, therefore, black silicon material is
Make the preferred material of near infrared band photodetector.In prior art, common black silicon processing technology has：Reactive ion beam
The methods such as etching, femtosecond pulse ablation, electrochemical corrosion, metal Aided Wet burn into plasma immersion and ion implantation,
Wherein, when making black silicon using reactive ion beam etching (RIBE), typically in SF6And O2Silicon face is performed etching under atmosphere, inventor was once
Checking was carried out to the method, in proof procedure, inventor has found, the technique is not only harsh to technological parameter requirement, and
Affected larger by equipment state, the etching effect of the distinct device of same model under the conditions of same process has larger difference,
And it is specifically indefinite by the performance impact of equipment which aspect, in addition, previous process is weaker to the Etch selectivity of silicon face, carve
Lose that the black silicon face gash depth for is shallower, the reflectance of black silicon layer is higher, Jing tests, many batches produced using previous process
Secondary black silicon layer is to the average reflectance of 450nm～880nm wave bands 8% or so.
The content of the invention
For the problem in background technology, the present invention proposes a kind of method for making black silicon layer, and its innovation is：It is described
The step of method is：
1）Using reactive ion etching machine, in SF6And O2Silicon face is performed etching under atmosphere, make silicon face form matte；
2）Using plasma etching machine, in Cl2And O2Silicon face is performed etching under atmosphere, make the silicon face roughness on matte
Further increase, so as to obtain black silicon layer；
3）Silicon face is cleaned using dilute hydrofluoric acid solution, black silicon layer completes.
The present invention principle be：In prior art, directly in SF6And O2Silicon face is performed etching under atmosphere black to make
Silicon, its black silicon effect on driving birds is not good produced, in addition to equipment state factor, to silicon when the main cause for causing such case is etching
The Etch selectivity on surface is weaker, and the gash depth for etching is shallower, for this purpose, inventor has carried out numerous studies, and proposes
The solution of the present invention, in the present invention, first in SF6And O2Silicon face is performed etching under atmosphere, make silicon face form matte（
I.e. common in this area silicon face process for etching）, its objective is to increase the roughness of silicon face, make silicon face form height not
Flat groove, then again in Cl2And O2Silicon face is performed etching under atmosphere, in etching process, have silicon dioxide and produce, two
When silicon oxide is deposited on matte, as the height at the top of groove is higher, silicon dioxide is more easy at the top of groove and height is higher
Site deposition, at the top of groove and after height higher site deposition silicon dioxide, surface area can increase, and then further
So that silicon dioxide is more easy to be deposited on respective regions, the silicon dioxide being deposited on groove can play barrier effect, and deposit is got over
Many, blocking effect is more obvious, so as to be formed from mask effect in respective regions, is not deposited the region that thing is covered, will by after
Continue to depth and etch, so as to improve selectivity of the etching effect to longitudinal direction, groove is further deepened, finally can just produce
The deeper black silicon layer of gash depth, makes black silicon layer obtain relatively low reflectance, after the completion of the operation of plasma etching machine, uses dilute hydrogen
Deposit on black silicon layer just easily can be washed away by fluorspar acid solution（In dilute hydrofluoric acid solution, the ratio of Fluohydric acid. and water can
Using 1 to 50）；Jing lot of experiments verifies that the method for the present invention is independent of equipment state, and process window is larger, produces
The gash depth of black silicon layer is larger（The groove mean depth of the black silicon produced using technique described in background technology is at 2 microns
Left and right, the groove mean depth of the black silicon produced using the present invention can reach 5 microns）, Jing tests, multiple batches of product pair
The average reflectance of 450nm～880nm wave bands is 0.5% or so.
The method have the benefit that：Propose a kind of method for making black silicon layer, the black silicon that the method is produced
Layer gash depth is larger, and the inhibition to reflecting is preferable.
Specific embodiment
A kind of method for making black silicon layer, its innovation is：The step of methods described is：
1）Using reactive ion etching machine, in SF6And O2Silicon face is performed etching under atmosphere, make silicon face form matte；
2）Using plasma etching machine, in Cl2And O2Silicon face is performed etching under atmosphere, make the silicon face roughness on matte
Further increase, so as to obtain black silicon layer；
3）Silicon face is cleaned using dilute hydrofluoric acid solution, black silicon layer completes.
Claims (1)
1. a kind of method for making black silicon layer, it is characterised in that：The step of methods described is：
1）Using reactive ion etching machine, in SF6And O2Silicon face is performed etching under atmosphere, make silicon face form matte；
2）Using plasma etching machine, in Cl2And O2Silicon face is performed etching under atmosphere, make the silicon face roughness on matte
Further increase, so as to obtain black silicon layer；
3）Silicon face is cleaned using dilute hydrofluoric acid solution, black silicon layer completes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611008395.5A CN106548935A (en) | 2016-11-16 | 2016-11-16 | The method for making black silicon layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611008395.5A CN106548935A (en) | 2016-11-16 | 2016-11-16 | The method for making black silicon layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106548935A true CN106548935A (en) | 2017-03-29 |
Family
ID=58394520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611008395.5A Pending CN106548935A (en) | 2016-11-16 | 2016-11-16 | The method for making black silicon layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106548935A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946378A (en) * | 2016-10-12 | 2018-04-20 | 英属开曼群岛商精曜有限公司 | Solar battery structure |
| CN110783417A (en) * | 2019-11-08 | 2020-02-11 | 国家纳米科学中心 | Method for manufacturing cone-shaped light trapping structure with adjustable density on silicon surface and prepared black silicon |
| CN112349812A (en) * | 2020-10-27 | 2021-02-09 | 武汉新芯集成电路制造有限公司 | Preparation method of silicon wafer surface textured structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101734611A (en) * | 2009-12-16 | 2010-06-16 | 北京大学 | Maskless method for preparing black silicon by deep reactive ion etching |
| CN101950777A (en) * | 2010-09-01 | 2011-01-19 | 中国科学院微电子研究所 | Method for preparing doped black silicon in situ |
| CN105206709A (en) * | 2015-10-10 | 2015-12-30 | 浙江晶科能源有限公司 | Treatment method used for optimizing black silicon surface structure |
-
2016
- 2016-11-16 CN CN201611008395.5A patent/CN106548935A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101734611A (en) * | 2009-12-16 | 2010-06-16 | 北京大学 | Maskless method for preparing black silicon by deep reactive ion etching |
| CN101950777A (en) * | 2010-09-01 | 2011-01-19 | 中国科学院微电子研究所 | Method for preparing doped black silicon in situ |
| CN105206709A (en) * | 2015-10-10 | 2015-12-30 | 浙江晶科能源有限公司 | Treatment method used for optimizing black silicon surface structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946378A (en) * | 2016-10-12 | 2018-04-20 | 英属开曼群岛商精曜有限公司 | Solar battery structure |
| CN110783417A (en) * | 2019-11-08 | 2020-02-11 | 国家纳米科学中心 | Method for manufacturing cone-shaped light trapping structure with adjustable density on silicon surface and prepared black silicon |
| CN110783417B (en) * | 2019-11-08 | 2021-06-29 | 国家纳米科学中心 | Method for manufacturing cone-shaped light trapping structure with adjustable density on silicon surface and prepared black silicon |
| CN112349812A (en) * | 2020-10-27 | 2021-02-09 | 武汉新芯集成电路制造有限公司 | Preparation method of silicon wafer surface textured structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106548935A (en) | The method for making black silicon layer | |
| CN103449731B (en) | A kind of method promoting fused quartz optical component damage threshold | |
| US20120289056A1 (en) | Selective silicon nitride etch | |
| WO2011087874A3 (en) | Method of controlling trench microloading using plasma pulsing | |
| JP2014523110A5 (en) | ||
| CN101770974B (en) | Method for fabricating shallow-trench isolation structure | |
| JP2010272758A5 (en) | ||
| JP2011519487A5 (en) | ||
| US9257280B2 (en) | Mitigation of asymmetrical profile in self aligned patterning etch | |
| JP2015114381A5 (en) | ||
| CN106711035B (en) | Trench structure on silicon carbide substrate and method of making same | |
| US20170316976A1 (en) | Method of producing an opening with smooth vertical sidewall in a semiconductor substrate | |
| TWI461378B (en) | Method for manufacturing glass substrate having arched surface | |
| CN103050438B (en) | The lithographic method of contact hole | |
| WO2012061436A3 (en) | Dry etching method of surface texture formation on silicon wafer | |
| CN104835776B (en) | The production method of TSV blind holes | |
| CN102110645A (en) | Cleaning method used after chemical mechanical polishing | |
| CN104576340A (en) | Method for forming top fillets of deep trenches | |
| US9105710B2 (en) | Wafer dicing method for improving die packaging quality | |
| CN105374737B (en) | Etching process mesoporous bottom is inhibited the method for notch, the forming method in hole occur | |
| CN106783584A (en) | Substrate etching method | |
| TW201604993A (en) | Etching method of high aspect-ratio structure and manufacturing method of MEMS devices | |
| WO2017099407A3 (en) | Method for etching electrode, and secondary battery comprising electrode etched thereby | |
| US10418276B2 (en) | Control method for differentiated etching depth | |
| CN103489757A (en) | Etching method for laminated insulating film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |