CN108372659B - 基于掩膜的分区预热设备及其分区预热方法 - Google Patents

基于掩膜的分区预热设备及其分区预热方法 Download PDF

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CN108372659B
CN108372659B CN201810124817.8A CN201810124817A CN108372659B CN 108372659 B CN108372659 B CN 108372659B CN 201810124817 A CN201810124817 A CN 201810124817A CN 108372659 B CN108372659 B CN 108372659B
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temperature
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CN108372659A (zh
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赵继宗
赵峰
赵元立
叶迅
胡滨
胡立人
金朝亮
李元
王志斌
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Xi'an Kangtuo Medical Technology Co., Ltd
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Priority to EP18905363.0A priority patent/EP3744504B1/en
Priority to JP2020564983A priority patent/JP7004356B2/ja
Priority to ES18905363T priority patent/ES2913281T3/es
Priority to PCT/CN2018/076087 priority patent/WO2019153287A1/zh
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Abstract

本发明属于快速制造设备技术领域,具体涉及一种基于掩膜的分区预热设备及其分区预热方法。本发明通过设有全局加热光源和局部预热光源,成型缸设有的基板用于加热底层粉末,在局部预热光源和全局加热光源之间设有掩膜板,在局部预热区上涂铺有待烧结粉料,局部预热光源、掩膜板和全局加热光源均与温度控制器连接,温度监测器中温控探头和热成像仪设置在工作腔室内,用于检测粉面温度。本发明通过降低成形缸总体的工作温度和减小设备冷却压力的方法,增加选区激光烧结设备的工作稳定性及连续工作时间,实现对高熔点粉末的快速烧结及粉末多次回收利用。

Description

基于掩膜的分区预热设备及其分区预热方法
技术领域
本发明属于快速制造设备技术领域,具体涉及基于掩膜的分区预热设备及其分区预热方法。
背景技术
SLS(选择性激光烧结,selective laser sintering)技术是一种以激光为能量源,将粉料材料层烧结为三维实体的快速成形技术,聚合物、金属、陶瓷等均可用于SLS。为了减小变形和翘曲,增加激光利用率,当聚合物材料用于SLS时,一般将粉床中的材料预先加热到略低于材料熔点的温度,此为预热温度。预热温度是影响零件精度和性能的重要参数:当预热温度较低时,成形过程中会发生翘曲,零件产生变形,零件精度下降或难以成形;当预热温度过高时,未烧结的粉料因发生粘连而板结,不能被回收再次利用,大大增加了打印成本。尤其对于一些具有较高熔点(熔点≥300℃)的特种工程塑料或易老化材料,如PEEK(聚醚醚酮)、PI(聚酰亚胺)等,预热温度高(≥300℃),且预热范围窄。一方面成形腔室内的轴承、滑轨等部件长期处于高温环境中,老化速度加快,以至于成型机连续工作时间及长期工作稳定性大大减小;另一方面,该类高熔点聚合物的材料成本往往是尼龙、蜡粉等低熔点材料的一倍或数倍,若成形过程中未烧结的粉料发生板结难以再次利用,生产成本将显著增加。
发明内容
本发明要解决的技术问题在于,提供的一种基于掩膜的分区预热设备及其分区预热方法,通过降低成形腔总体的工作温度和减小设备冷却压力的方法,增加了SLS成型设备的工作稳定性及连续工作时间,降低设备维护成本。
为解决上述问题,本发明提供基于掩膜的分区预热设备,包括设置在底部的成形缸,所述成形缸的底部设有加热基板用于加热底层粉料,根据待加工零件的截面轮廓设有局部预热区,所述局部预热区上涂铺有由送粉机构涂铺的待烧结粉料,所述粉料在成形缸中堆积形成粉床;
所述成形缸的上部设有全局加热光源,所述全局加热光源上部设有局部预热光源,在所述局部预热光源和全局加热光源之间设有掩膜板,所述掩膜板设置的位置和形状与零件的截面形状相对应且设置在零件的上方;
所述局部预热光源、掩膜板和全局加热光源均与温度控制器连接,所述温度控制器与温度监测器连接,所述温度监测器中设置有温控探头和热成像仪,所述温控探头和热成像仪设置在与局部预热区相对应的位置。
优选的技术方案,所述成形缸内设有充氮气装置,所述充氮气装置包括与氮气瓶连接的氮气喷嘴,所述氮气瓶上设有氮气阀门,所述氮气喷嘴上设有气压表。
优选的技术方案,所述温度控制器将全局加热温度、局部预热温度分别设置在粉料熔点以下20℃~120℃及1~50℃范围内,将成形缸内的基板温度和成形缸四壁温度分别设置在粉料熔点20℃~150℃及20℃~200℃范围内。
优选的技术方案,所述掩膜板下面设有层状结构,所述层状结构包括按照上下顺序设置热量反射层、第一散热层、第二散热层、隔热层、第三散热层和固定层。
优选的技术方案,所述第一散热层中间设有若干横向设置的第一条形孔,所述第二散热层设有若干与第一条形孔相通的纵向孔,所述纵向孔的底部封闭,所述第三散热层设有若干第二条形孔,所述第二条形孔为封闭孔且内部充满空气。
本发明还提供了所述基于掩膜的分区预热设备的分区预热方法,所述方法包括以下步骤:
步骤1)对待成型的零件进行几何切片分层,获得待成型的零件每层的截面轮廓及扫描路径;
步骤2)使用成形缸内设有的充氮气装置,向成型腔内充入氮气进行氮气保护步骤;
步骤3)利用送粉机构,涂铺一层粉料,形成均匀光滑的待扫描粉料层结构;
步骤4)通过温度控制器分别将全局加热温度、局部预热温度分别设置在粉料熔点以下20℃~120℃及1~50℃范围内,将成形缸内的基板温度和成形缸四壁温度分别设置在粉料熔点20℃~150℃及20℃~200℃范围内;
步骤5)掩膜板依据的待扫描零件截面轮廓与已经扫描零件截面轮廓形成对应的掩膜,将局部预热光源的热量到达零件截面表面的局部预热区,对局部的待扫描粉料进行加热成型;
步骤6)使用温度监测器对温度进行实时监测,当确认分别达到全局加热温度与局部预热温度后,使用激光扫描仪扫描该层零件的截面轮廓,完成当前层的粉料烧结;
步骤7)基板下降一个层厚,铺覆新一层的粉料,温度监测器实时再次确认全局加热温度、局部预热温度及全局温度场变化,若已烧结区域与未烧结区域存在温度突变,温度控制器将调节掩膜轮廓与局部预热光源功率,使二者之间的温度场均匀过渡后,激光扫描仪再次扫描该层的截面轮廓;
步骤8)重复步骤5)至步骤7),直至完成零件的全部截面轮廓的烧结;
步骤9)根据粉料特性,缓慢降低全局加热光源与局部预热光源功率,使得烧结完成的零件及未烧结的粉料缓慢冷却,保证零件形状和尺寸的稳定性;
步骤10)取出已成型的零件,对未烧结的粉料回收过筛,能再次进行利用。
本发明与现有技术相比,具有如下有益效果:
1、本发明降低了成形腔总体的工作温度,减小了设备冷却压力,增加机器了工作稳定性及连续工作时间,能降低设备维护成本。
2、本发明降低了非烧结区域的加热温度,在保证零件尺寸精度的同时,显著降低了该区域粉料的老化及板结现象,使得高熔点聚合物得以回收,增加了粉料利用率。
附图说明
图1是本发明所述基于掩膜的分区预热设备的主视图;
图2是图1中掩膜板的结构放大主视图。
附图标记
图中:1—局部预热光源;2—掩膜板;a1—热反射层,a2—第一散热层,a3—第二散热层,a4—隔热层,a5—第三散热层,a6—粘接层,b1—第一条形孔,b2—纵向孔,b3—第二条形孔,3—温度控制器;4—温度监测器;5—粉料;6—局部预热区;7—全局加热光源;8—测温探头;9—热成像仪;10—基板加热板;11—成形缸;12—局部预热区。
具体实施方式
下文参照附图对本发明的具体实施例进行详细说明。
实施例1
如图1所示,本发明提供的基于掩膜的分区预热设备,包括设置在底部的成形缸11,所述成形缸11的底部设有加热基板10用于加热底层粉料,根据待加工零件6的截面轮廓设有局部预热区12,所述局部预热区12上涂铺有由送粉机构涂铺的待烧结粉料5,所述粉料5在成形缸11中堆积形成粉床,本实施例中,以德国EOS公司推出的高熔点系列聚合物HP3PEEK粉料为例,进行详细说明。其中,HP3PEEK粉料的熔点为372℃,采用传统全局单一预热方式时,粉料预热温度为365℃,成形基板为340℃,成形缸11四壁温度为345℃;成型结束后,凡填入成形缸11的未烧结粉料均会发生板结,不能二次利用;
所述成形缸11的上部设有全局加热光源7,所述全局加热光源7上部设有局部预热光源1,在所述局部预热光源1和全局加热光源7之间设有掩膜板2,所述掩膜板2设置的位置和形状与零件6的截面形状相对应且设置在零件6的上方;
所述局部预热光源1、掩膜板2和全局加热光源7均与温度控制器3连接,所述温度控制器3与温度监测器4连接,所述温度监测器4中设置有温控探头8和热成像仪9,本实施例选用的热成像仪9为红外热成像仪,所述温控探头8和热成像仪9设置在成型腔室内,用于监测全局加热光源与局部预热温度。
优选的技术方案,所述成形缸11内设有充氮气装置,所述充氮气装置包括与氮气瓶连接的氮气喷嘴,所述氮气瓶上设有氮气阀门,所述氮气喷嘴上设有气压表,进行氮气保护。
优选的技术方案,所述温度控制器3将全局加热温度、局部预热温度分别设置在粉料熔点以下20℃~120℃及1~50℃范围内,将成形缸11内的基板10温度和成形缸11四壁温度分别设置在粉料熔点20℃~150℃及20℃~200℃范围内。
本发明还提供了所述基于掩膜的分区预热设备的分区预热方法,所述方法包括以下步骤:
步骤1)对待成型的零件6进行几何切片分层,获得待成型的零件6每层的截面轮廓及扫描路径;
步骤2)使用成形缸内设有的充氮气装置,向成型腔内充入氮气进行氮气保护步骤;
步骤3)利用送粉机构,涂铺一层粉料5,形成均匀光滑的待扫描粉料层结构;
步骤4)通过温度控制器3分别将全局加热温度、局部预热温度分别设置在粉料熔点以下20℃~120℃及1~50℃范围内,将成形缸11内的基板10温度和成形缸11四壁温度分别设置在粉料熔点20℃~150℃及20℃~200℃范围内;
步骤5)掩膜板2依据的待扫描零件6截面轮廓与已经扫描零件6截面轮廓形成对应的掩膜,将局部预热光源的热量到达零件6截面表面的局部预热区,对局部的待扫描粉料进行加热成型;
步骤6)使用温度监测器4对温度进行实时监测,当确认分别达到全局加热温度与局部预热温度后,使用激光扫描仪扫描该层零件6的截面轮廓,完成当前层的粉料烧结;
步骤7)基板10下降一个层厚,铺覆新一层的粉料,温度监测器4实时再次确认全局加热温度、局部预热温度及全局温度场变化,若已烧结区域与未烧结区域存在温度突变,温度控制器3将调节掩膜板2轮廓与局部预热光源功率,使二者之间的温度场均匀过渡后,激光扫描仪再次扫描该层的截面轮廓;
步骤8)重复步骤5)至步骤7),直至完成零件6的全部截面轮廓的烧结;
步骤9)根据粉料5的特性,缓慢降低全局加热光源与局部预热光源功率,使得烧结完成的零件6及未烧结的粉料缓慢冷却,保证零件6形状和尺寸的稳定性;
步骤10)取出已成型的零件6,对未烧结的粉料回收过筛,能再次进行利用。
优选的技术方案,所述步骤7)中的粉料(5)下降一个层厚,下降层厚的厚度数值范围为0.10~0.14mm,再铺覆新一层的粉料料。
优选的技术方案,所述步骤7)中,下降层厚的厚度数值分别为0.10mm、0.11mm、0.12mm、0.13mm或0.14mm,后再铺覆新一层的粉料料,本发明能根据不同零件6的结构不同,选择下降的厚度不同,能够更好的实现零件6的烧结。本发明采用的高熔点聚合物进行局部预热,本实施例中,选用HP3粉料烧结粉料,从而改善现有高熔点的聚合物中未打印粉料结块,粉料不能重复利用的问题。
实施例2
如图2所示,本实施例在实施例1的基础上进行了进一步改进,区别在于:本实施例中,所述掩膜板2下面设有层状结构,所述层状结构包括按照上下顺序设置热量反射层a1、第一散热层a2、第二散热层a3、隔热层a4、第三散热层a5和固定层a6,其中,热量反射层a1为光洁度高的粉料制成,选用如表面经剖光的不锈钢制成。固定层a6选用硬质陶瓷粉料制成,然后底面再选用耐热树脂与成形缸顶板10进行粘接。优选的,隔热层a4选用石棉粉料制成,起到隔热和阻热的作用。所述第一散热层a2选用粗粒的砂粉料制成陶粉料制成,第一散热层a2中间设有若干横向设置的第一条形孔b1,第一条形孔b1的两端与第一散热层a2贯通,能够将热量反射层a1未反射出的热量,即进行吸收了的热量,从第一条形孔b1的两端顺利散出。所述第二散热层a3设有若干与第一条形孔b1相通的纵向孔b2,所述纵向孔b2的底部封闭,形成与所述第一条形孔b1相通的气腔,起到将能隔热和顺利散热的作用。第三散热层a5设有若干第二条形孔b3,所述第二条形孔b3为封闭孔且内部充满空气,由于空气具有不导热的特性,所以能够起到保温的作用,保持住成形缸11上需要的温度,即能对局部预热区6进行预热。
上面结合附图对本发明优选的具体实施方式和实施例作了详细说明,但是本发明并不限于上述实施方式和实施例,在本领域技术人员所具备的知识范围内,还可以在不脱离本发明构思的前提下做出各种变化。

Claims (6)

1.基于掩膜的分区预热设备,其特征在于,所述分区预热设备包括设置在底部的成形缸(11),所述成形缸(11)的底部设有基板(10), 用于加热底层粉料,根据零件(6)的截面形状,在所在截面位置设有局部预热区(12),所述局部预热区(12)上涂铺有由送粉机构涂铺的待烧结粉料(5),所述粉料(5)在成形缸(11)中堆积形成粉床;
所述成形缸(11)的上部设有全局加热光源(7),全局加热光源(7)对整个成形缸(11)的表层粉料进行加热,即为全局加热温度,所述全局加热光源(7)上部设有局部预热光源(1),局部预热光源(1)对局部预热区(12)进行加热,即为局部预热温度,在所述局部预热光源(1)和全局加热光源(7)之间设有掩膜板(2),所述掩膜板(2)设置的位置和形状与零件(6)的截面形状相对应且设置在零件(6)的上方;
所述局部预热光源(1)、掩膜板(2)和全局加热光源(7)均与温度控制器(3)连接,所述温度控制器(3)与温度监测器(4)连接,所述温度监测器(4)中设置有温控探头(8)和热成像仪(9),所述温控探头(8)和热成像仪(9)设置在工作腔室内,用于检测粉料温度。
2.根据权利要求1所述基于掩膜的分区预热设备,其特征在于,所述成形缸(11)内设有充氮气装置,所述充氮气装置包括与氮气瓶连接的氮气喷嘴,所述氮气瓶上设有氮气阀门,所述氮气喷嘴上设有气压表。
3.根据权利要求1所述基于掩膜的分区预热设备,其特征在于,所述温度控制器(3)将全局加热温度、局部预热温度分别设置在粉料熔点以下20℃~120℃及1~50℃范围内,将成形缸(11)内的基板(10)温度和成形缸(11)四壁温度分别设置在粉料熔点20℃~150℃及20℃~200℃范围内。
4.根据权利要求1所述基于掩膜的分区预热设备,其特征在于,所述掩膜板(2)下面设有层状结构,所述层状结构包括按照上下顺序设置热量反射层(a1)、第一散热层(a2)、第二散热层(a3)、隔热层(a4)、第三散热层(a5)和固定层(a6)。
5.根据权利要求4所述基于掩膜的分区预热设备,其特征在于,所述第一散热层(a2)中间设有若干横向设置的第一条形孔(b1),所述第二散热层(a3)设有若干与第一条形孔(b1)相通的纵向孔(b2),所述纵向孔(b2)的底部封闭,所述第三散热层(a5)设有若干第二条形孔(b4),所述第二条形孔(b4)为封闭孔且内部充满空气。
6.根据权利要求1至5任一所述基于掩膜的分区预热设备的分区预热方法,其特征在于,所述方法包括以下步骤:
步骤1)对待成型的零件(6)进行几何切片分层,获得待成型的零件(6)每层的截面轮廓及扫描路径;
步骤2)使用成形缸内设有的充氮气装置,向成型腔内充入氮气进行氮气保护步骤;
步骤3)利用送粉机构,涂铺一层粉料(5),形成均匀光滑的待扫描粉料层结构;
步骤4)通过温度控制器(3)分别将全局加热温度、局部预热温度分别设置在粉料熔点以下20℃~120℃及1~50℃范围内,将成形缸(11)内的基板(10)温度和成形缸(11)四壁温度分别设置在粉料熔点20℃~150℃及20℃~200℃范围内;
步骤5)掩膜板(2)依据零件(6)待扫描截面轮廓与已经扫描截面轮廓形成对应的掩膜,将局部预热光源的热量到达零件(6)截面表面的局部预热区(12),对局部的待扫描粉料进行加热成型;
步骤6)使用温度监测器(4)对温度进行实时监测,当确认分别达到全局加热温度与局部预热温度后,激光器扫描零件(6)的截面轮廓,完成当前层的粉料烧结;
步骤7)基板(10)下降一个层厚,铺覆新一层的粉料,温度监测器(4)实时再次确认全局加热温度、局部预热温度及全局温度场变化,若已烧结区域与未烧结区域存在温度突变,温度控制器(3)将调节掩膜板(2)轮廓与局部预热光源功率,使二者之间的温度场均匀过渡后,激光器再次扫描零件(6)当前层的截面轮廓;
步骤8)重复步骤5)至步骤7),直至完成零件(6)的全部截面轮廓的烧结;
步骤9)根据粉料(5)材料特性,缓慢降低全局加热光源与局部预热光源功率,使得烧结完成的零件(6)及未烧结的粉料缓慢冷却,保证零件(6)形状和尺寸的稳定性;
步骤10)取出已成型的零件(6),对未烧结的粉料回收过筛,能再次进行利用。
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CN108372659A (zh) 2018-08-07
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EP3744504A1 (en) 2020-12-02
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