CN108362420A - A kind of insulating film composite quartz piezoelectric sensor and its scaling method - Google Patents
A kind of insulating film composite quartz piezoelectric sensor and its scaling method Download PDFInfo
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- CN108362420A CN108362420A CN201810172322.2A CN201810172322A CN108362420A CN 108362420 A CN108362420 A CN 108362420A CN 201810172322 A CN201810172322 A CN 201810172322A CN 108362420 A CN108362420 A CN 108362420A
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- piezoelectric
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- quartz
- insulating film
- quartz wafer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
- G01L5/0052—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes measuring forces due to impact
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L25/00—Testing or calibrating of apparatus for measuring force, torque, work, mechanical power, or mechanical efficiency
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
- G01L5/14—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring the force of explosions; for measuring the energy of projectiles
Abstract
A kind of insulating film composite quartz piezoelectric sensor and its scaling method, sensor include that quartz wafer is provided between upper layer polyimide insulative film and lower layer's polyimide insulative film, and copper foil leads are laid in the top and bottom of quartz wafer；By series load resistance R and oscillograph between the cathode face and positive pole-face of quartz wafer, piezoelectric transducer measurement assembly is obtained；Target is tightly attached in the cathode face of quartz wafer in piezoelectric transducer measurement assembly, target uses the surface of aluminium, changes with time for measuring the impact wave stress σ (t) on target surface；It is integrated by the piezoelectric signal of sensor measurement, finally obtains the sensor dynamic piezoelectric sensitivity coefficient of each big gun experiment；It takes many experiments result to be averaged, obtains the dynamic piezoelectric coefficient of piezoelectric transducer；The present invention has the advantages that, strong anti-interference performance, good insulation preformance, easy to use, manufacture craft is simple.
Description
Technical field
The present invention relates to piezoelectric transducer, more particularly to a kind of insulating film composite quartz piezoelectric sensor and its calibration side
Method.
Background technology
Quartz crystal is usually used in various impact stress wave profiles because intensity height, the temperature stability of piezoelectric property are good
It measures.This strain gauge also makes Sandia quartz strain gauges, generally use have certain diameter d- thickness l ratios (d/l
>=5) [J.Appl.Phys.36 (5), 1775-1783 (1965), explosion and impact, 5 (4), 61- is made in the quartzy plectane of x cuttings
66 (1984)], to ensure that chip is in uniaxial train state.Sensor structure can only use positive setting, and (i.e. shock wave is from bearing
Pole-face is propagated to positive pole-face), when stress wave enters quartz crystal from cathode face, before reaching positive pole-face, sensor output
Piezoelectric current is proportional to the pressure on sample-sensor cathode face.When stress wave reaches positive pole-face, output signal overturning, because
This, effective time of measuring of the sensor of this working method be less than or equal to stress wave by sensor sensing element when
Between, it is closely related with the thickness of sensor.When Shock stress Wave pulse rise time being more than sensor measurement effective time, pass
Sensor cannot complete the measurement of stress crest value.
Invention content
In order to overcome the above-mentioned deficiencies of the prior art, the present invention provides a kind of insulating film composite quartz piezoelectric sensors
And its scaling method, can stress wave waveform be obtained using the integral of piezoelectric signal so that measure effective time not by
The limitation of sensor thickness；It can adjust as needed, when signal is weak, using the big quartz wafer of area, so that passing
Sensor measure signal-to-noise ratio become larger, have the characteristics that packaging technology simply, conveniently, it is at low cost.
In order to achieve the above object, the technical solution adopted by the present invention is：
A kind of insulating film composite quartz piezoelectric sensor, including lower layer's polyimide insulative film 1 and upper layer polyimides
It is provided with quartz wafer 3, quartz-crystal between the 2 of insulating film 2, lower layer's polyimide insulative film 1 and upper layer polyimide insulative film
Lay copper foil leads 4 in the top and bottom of piece 3；Epoxy is injected between lower layer's polyimide insulative film 1 and upper layer polyimide insulative film 2
Resin 5 bonds compacting encapsulation.
The quartz wafer 3 surface is provided with first vapor deposition chromium, then the coating 7 of vacuum plating silver respectively up and down.
The thickness of the coating 7 is not more than 3 μm.
The thickness of the quartz wafer 3 is 0.2mm, diameter 20mm.
A kind of scaling method of insulating film composite quartz piezoelectric sensor, step are：
Step 1：By series load resistance R and oscillograph between the cathode face and positive pole-face of quartz wafer 3, piezoelectricity is obtained
Sensor measurement component；
Step 2：The cathode face of quartz wafer 3 in the piezoelectric transducer measurement assembly obtained in step 1 is tightly attached to
The surface of target 8 is changed with time for measuring the impact wave stress σ (t) on 8 surface of target；When impact wave stress σ (t) is acted on
In 3 electrode of quartz wafer, due to piezoelectric effect, piezoelectric current i (t) is generated in measuring circuit, piezoelectric charge Q is by following formula
It calculates
U (t) is the piezoelectric voltage signal on load resistance R in formula；The pressure of quartz wafer 3 under plane uniaxial train state
Electric equation is：
Q=AK σ (2)
In formula, A is electrode area, and K is chip piezoelectric modulus, is provided by experimental calibration, can be obtained by (1) and (2)
By measuring piezoelectric voltage signal, and the shock wave waveform by quartz wafer 3 can be obtained to signal integration；
The front of target 8 is provided with catapult-launching gear, and the catapult-launching gear includes flight track 9, one end of flight track 9
It is provided with bullet support 10, film flying 11, the other end connection laser velocimeter device 12 of flight track 9 are stained in bullet support 10.
Step 3：Under Φ 130mm light-gas gun devices, the difference in target 8 is obtained by the speed w and material of film flying 11
Shock wave plateau pressure σ；
1, as particle rapidity u in 8 material identical of film flying 11 and target, referred to as symmetrical impact, target 82It is the one of flyer velocity w
Half, i.e. w/2；
2, when 11 material of film flying and different target 8, particle rapidity u in target2It is calculated using following formula
Wherein
C and λ is the impact Hugoniot parameters of material in above formula, and subscript 1 and 2 corresponds to film flying and target respectively.
Particle rapidity u in target is calculated by the speed of film flying and the Hugoniot parameters of material2, shock wave pressure is under
Formula calculates
σ=ρ02(c02+λ2u2)u2 (6)
It brings the plateau pressure that (6) obtain into (3), is integrated by the piezoelectric signal of sensor measurement, finally obtained every
The sensor dynamic piezoelectric sensitivity coefficient of one big gun experiment；It takes many experiments result to be averaged, obtains the dynamic of piezoelectric transducer
State piezoelectric modulus.
Beneficial effects of the present invention：
The piezoelectric susceptibility coefficient temperature stability of the piezoelectric transducer of the present invention is good, measures the big (0- of the range of stress
1400MPa), strong anti-interference performance, good insulation preformance, easy to use, manufacture craft is simple, at low cost；The present invention is widely used,
It can be used for the transient test of all kinds of shock loadings
Description of the drawings
Fig. 1 is the structural diagram of the present invention.
Fig. 2 is the sectional view in the directions A-A of the present invention.
Fig. 3 is the structural schematic diagram of the quartz wafer 3 of the present invention.
Fig. 4 is the measuring circuit figure of the present invention.
Fig. 5 is the standardization experimental apparatus figure of the present invention.
Fig. 6 is target assembly schematic diagram in present invention actual use.
Fig. 7 is present invention actual use measuring signal and the Shock stress Wave that integral obtains.
Specific implementation mode
The invention will be further described with reference to the accompanying drawings and examples.
It is shown in reference picture 1, Fig. 2, a kind of insulating film composite quartz piezoelectric sensor, including lower layer's polyimide insulative film
1 and upper layer polyimide insulative film 2, it is provided with quartz between lower layer's polyimide insulative film 1 and upper layer polyimide insulative film 2
Lay copper foil leads 4 in the top and bottom of chip 3, quartz wafer 3；Lower layer's polyimide insulative film 1 and upper layer polyimide insulative film 2
Between injection epoxy resin 5 bond compacting encapsulation.
With reference to shown in Fig. 3, the quartz wafer 3 surface is provided with first vapor deposition chromium, then Vacuum Deposition respectively up and down
The coating 7 of silver.
The thickness of the coating 7 is not more than 3 μm.
The thickness of the quartz wafer 3 is 0.2mm, diameter 20mm.
A kind of scaling method of insulating film composite quartz piezoelectric sensor, step are：
With reference to shown in Fig. 4, step 1：By series load resistance R and oscillography between the cathode face and positive pole-face of quartz wafer 3
Device obtains piezoelectric transducer measurement assembly；
Referring to Figure 5, step 2：By the quartz wafer 3 in the piezoelectric transducer measurement assembly obtained in step 1
Cathode face is tightly attached to target 8, target 8 using Ly12 aluminium surface, for measuring the impact wave stress σ (t) on 8 surface of target at any time
Variation；As impact wave stress σ
(t) it when acting on 3 electrode of quartz wafer, due to piezoelectric effect, is generated in measuring circuit
Piezoelectric current i (t), piezoelectric charge Q are calculated by following formula (1)
U (t) is the piezoelectric voltage signal on load resistance R in formula；The pressure of quartz wafer 3 under plane uniaxial train state
Electric equation is：
9=AK σ (2)
In formula, A is electrode area, and K is chip piezoelectric modulus, is provided by experimental calibration, can be obtained by (1) and (2)
By measuring piezoelectric voltage signal, and the shock wave waveform by quartz wafer 3 can be obtained to signal integration；
The front of target 8 is provided with catapult-launching gear, and the catapult-launching gear includes flight track 9, one end of flight track 9
It is provided with bullet support 10, film flying 11, the other end connection laser velocimeter device 12 of flight track 9 are stained in bullet support 10.
Step 3：Under Φ 130mm light-gas gun devices, the difference in target 8 is obtained by the speed w and material of film flying 11
Shock wave plateau pressure σ；
1, when film flying 11 uses film flying as Ly12 aluminium and 8 material identical of target, referred to as symmetrical impact, particle rapidity in target 8
u2For the half of flyer velocity w, i.e. w/2；
2, when 11 material of film flying and different target 8, particle rapidity u in target2It is calculated using following formula
Wherein
C and λ is the impact Hugoniot parameters of material in above formula, and subscript 1 and 2 corresponds to film flying and target respectively.
Particle rapidity u in target is calculated by the speed of film flying and the Hugoniot parameters of material2, shock wave pressure is under
Formula calculates
σ=ρ02(c02+λ2u2)u2 (6)
It brings the plateau pressure that (6) obtain into (3), is integrated by the piezoelectric signal of sensor measurement, finally obtained every
The sensor dynamic piezoelectric sensitivity coefficient of one big gun experiment；It takes many experiments result to be averaged, obtains the dynamic of piezoelectric transducer
State piezoelectric modulus is 2.10pc/N, use scope：0-1400MPa；
The operation principle of the present invention：
In use, target assembly is constituted as shown in fig. 6, being encapsulated in the piezoelectric transducer of the present invention in by irradiation target, in electricity
The propagation of thermal shock wave, the piezoelectric signal generated by piezoelectric transducer measuring shock waves are generated in the lower target assembly of beamlet irradiation.Fig. 7
Give the stress that the piezoelectric signal of electron beam thermal shock wave and Integral Processing that piezoelectric transducer measurement obtains in experiment obtain
Waveform.Since signal is strong, again by oscillograph recording after being decayed using 20DB.As it can be seen that piezoelectric transducer measuring signal signal-to-noise ratio is high,
It is good to integrate the stress wave waveform obtained.
Claims (5)
1. a kind of insulating film composite quartz piezoelectric sensor, which is characterized in that including lower layer's polyimide insulative film (1) and upper
Strata acid imide insulating film (2) is provided with stone between lower layer's polyimide insulative film (1) and upper layer polyimide insulative film (2)
Lay copper foil leads (4) in the top and bottom of English chip (3), quartz wafer (3)；Lower layer's polyimide insulative film (1) and upper layer polyamides
Epoxy resin (5) is injected between imines insulating film (2) bonds compacting encapsulation.
2. a kind of insulating film composite quartz piezoelectric sensor according to claim 1, which is characterized in that the quartz
Chip (3) surface is provided with first vapor deposition chromium, then the coating (7) of vacuum plating silver respectively up and down.
3. a kind of insulating film composite quartz piezoelectric sensor according to claim 1, which is characterized in that the coating
(7) thickness is not more than 3 μm.
4. a kind of insulating film composite quartz piezoelectric sensor according to claim 1, which is characterized in that the quartz
The thickness of chip (3) is 0.2mm, diameter 20mm.
5. a kind of scaling method of insulating film composite quartz piezoelectric sensor according to claim 1, which is characterized in that
Its step is：
Step 1：By series load resistance R and oscillograph between the cathode face and positive pole-face of quartz wafer (3), piezoelectricity biography is obtained
Sensor measurement assembly；
Step 2：Target is tightly attached in the cathode face of quartz wafer (3) in the piezoelectric transducer measurement assembly obtained in step 1
(8) surface is changed with time for measuring the impact wave stress σ (t) on target (8) surface；When impact wave stress σ (t) makees
When used in quartz wafer (3) electrode, due to piezoelectric effect, piezoelectric current i (t) is generated in measuring circuit, piezoelectric charge Q is under
Formula calculates
U (t) is the piezoelectric voltage signal on load resistance R in formula；The piezoelectricity of quartz wafer (3) under plane uniaxial train state
Equation is：
Q=AK σ (2)
In formula, A is electrode area, and K is chip piezoelectric modulus, is provided by experimental calibration, can be obtained by (1) and (2)
By measuring piezoelectric voltage signal, and the shock wave waveform by quartz wafer 3 can be obtained to signal integration；
It is provided with catapult-launching gear immediately ahead of target (8), the catapult-launching gear includes flight track (9), and the one of flight track (9)
End is provided with bullet support (10), and film flying (11) is stained in bullet support (10), and the other end of flight track (9) connects laser velocimeter device
(12)；
Step 3：Under Φ 130mm light-gas gun devices, the difference in target (8) is obtained by the speed w and material of film flying (11)
Shock wave plateau pressure σ；
1, as particle rapidity u in film flying (11) and target (8) material identical, referred to as symmetrical impact, target 82For the half of flyer velocity w,
That is w/2；
2, when film flying (11) material and different target (8), particle rapidity u in target2It is calculated using following formula
Wherein
C and λ is the impact Hugoniot parameters of material in above formula, and subscript 1 and 2 corresponds to film flying and target respectively；
Particle rapidity u in target is calculated by the speed of film flying and the Hugoniot parameters of material2, shock wave pressure is by following formula meter
It calculates
σ=ρ02(c02+λ2u2)u2 (6)
It brings the plateau pressure that (6) obtain into (3), is integrated by the piezoelectric signal of sensor measurement, finally obtain each big gun
The sensor dynamic piezoelectric sensitivity coefficient of experiment；It takes many experiments result to be averaged, obtains the dynamic pressure of piezoelectric transducer
Electrostrictive coefficient.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810172322.2A CN108362420A (en) | 2018-03-01 | 2018-03-01 | A kind of insulating film composite quartz piezoelectric sensor and its scaling method |
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| CN201810172322.2A CN108362420A (en) | 2018-03-01 | 2018-03-01 | A kind of insulating film composite quartz piezoelectric sensor and its scaling method |
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ID=63003064
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| CN201810172322.2A Pending CN108362420A (en) | 2018-03-01 | 2018-03-01 | A kind of insulating film composite quartz piezoelectric sensor and its scaling method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115287744A (en) * | 2022-08-09 | 2022-11-04 | 中国工程物理研究院流体物理研究所 | Preparation method, detection method, calibration experimental device and method of piezoelectric single crystal |
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| CN2147522Y (en) * | 1992-12-22 | 1993-11-24 | 中国科学技术大学 | Insulating film composite high polymer sensor |
| CN103411718A (en) * | 2013-08-12 | 2013-11-27 | 江苏大学 | Method for measuring shock pressure of flyer under high strain rate and device thereof |
| CN105403748A (en) * | 2015-12-12 | 2016-03-16 | 西安交通大学 | Measurement apparatus and method for generating pulse voltages on the basis of flexoelectric dynamic effect |
| CN106104242A (en) * | 2014-03-21 | 2016-11-09 | 基斯特勒控股公司 | For measuring the piezoelectric type measuring cell of dynamic and static pressure and/or temperature |
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2018
- 2018-03-01 CN CN201810172322.2A patent/CN108362420A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2147522Y (en) * | 1992-12-22 | 1993-11-24 | 中国科学技术大学 | Insulating film composite high polymer sensor |
| CN103411718A (en) * | 2013-08-12 | 2013-11-27 | 江苏大学 | Method for measuring shock pressure of flyer under high strain rate and device thereof |
| CN106104242A (en) * | 2014-03-21 | 2016-11-09 | 基斯特勒控股公司 | For measuring the piezoelectric type measuring cell of dynamic and static pressure and/or temperature |
| CN105403748A (en) * | 2015-12-12 | 2016-03-16 | 西安交通大学 | Measurement apparatus and method for generating pulse voltages on the basis of flexoelectric dynamic effect |
Non-Patent Citations (2)
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| 张安跃等: "PVDF压力传感器的冲击压电特性研究", 《张安跃等，》 * |
| 经福谦等: "《动高压原理与技术》", 31 May 2006 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115287744A (en) * | 2022-08-09 | 2022-11-04 | 中国工程物理研究院流体物理研究所 | Preparation method, detection method, calibration experimental device and method of piezoelectric single crystal |
| CN115287744B (en) * | 2022-08-09 | 2023-11-21 | 中国工程物理研究院流体物理研究所 | Preparation method, detection method, calibration experiment device and method of piezoelectric monocrystal |
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Application publication date: 20180803 |
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