CN108356684B - Vacuum adsorption template for semiconductor wafer polishing device and polishing device - Google Patents
Vacuum adsorption template for semiconductor wafer polishing device and polishing device Download PDFInfo
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- CN108356684B CN108356684B CN201711328463.0A CN201711328463A CN108356684B CN 108356684 B CN108356684 B CN 108356684B CN 201711328463 A CN201711328463 A CN 201711328463A CN 108356684 B CN108356684 B CN 108356684B
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- vacuum
- wafer
- polishing
- vacuum adsorption
- vacuum chuck
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- 238000005498 polishing Methods 0.000 title claims abstract description 55
- 238000001179 sorption measurement Methods 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 239000000919 ceramic Substances 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 4
- -1 polytetrafluoroethylene Polymers 0.000 claims description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 abstract description 77
- 238000000034 method Methods 0.000 abstract description 15
- 230000008569 process Effects 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000002265 prevention Effects 0.000 abstract description 2
- 238000012545 processing Methods 0.000 abstract description 2
- 239000001993 wax Substances 0.000 description 14
- 238000007517 polishing process Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a vacuum adsorption template for a semiconductor wafer polishing device and a polishing device, which belong to the technical field of wafer polishing. The beneficial effects are that the process links of adhering wax, removing wax and the like are omitted, the processing time is shortened, and pollution is avoided; the cap peak structure has the protection effect of scratch prevention on the wafer, and is more suitable for polishing semiconductor wafers which are formed by volatile elements, such as Si, ge, gaAs, inP and have lower hardness; the wafer positioning and retaining effects are stable, and the yield and thickness uniformity are improved; the production cost is reduced.
Description
Technical Field
The invention relates to the technical field of wafer polishing, in particular to a vacuum adsorption template for a semiconductor wafer polishing device and a polishing device, which are particularly suitable for VGF crystal growth of semiconductor crystal materials such as indium phosphide, gallium phosphide and the like which need to be synthesized with volatile elements.
Background
Semiconductor materials are now playing an important role in a wider and wider range of applications, including computers, electronics, fiber optic communications, and the like. Such as Si, ge, iii-v compound semiconductor materials, and the like. In the technical field of material preparation, single-sided polishing of a wafer is an important process link. At present, most single-sided polishing processes adopt solid wax or liquid wax to adhere a wafer to a polishing disk, then polishing the wafer on a single polishing machine, and finally removing the wax and cleaning the wafer.
However, the above process has a plurality of defects, mainly: 1. the process links are more, the one-step single-sided polishing process needs 4 large process links such as wax sticking, single-sided polishing, wax removal, residual wax cleaning and the like, and a large amount of chemicals can be used for removing the residual wax, so that the whole process has long time, large material loss and high cost; 2. the incomplete cleaning of the wax can lead to surface contamination, particularly the edge (sometimes damaged) of the wafer after chamfering is easy to remain wax, the polishing solution and other particles are stained, the polishing solution and other particles are difficult to remove in the cleaning process, the granularity level of the final wafer is influenced, and finally the qualification rate of the product is reduced; 3. in the conventional single-sided polishing process, the thickness of the polished wafer surface is often inconsistent, and edge collapse phenomenon, namely thick middle and thin edge, is generally generated, which is caused by poor flatness of the polishing disc. Meanwhile, the different rotation speeds of the polishing head and the polishing disk can cause the linear speeds of the wafer at different positions of the polishing disk to be different, so that the uniformity of the thickness of the wafer is further affected.
The porous ceramic vacuum adsorption method omits paraffin adhesion, has relatively simple process, but in practical application, the ceramic has high hardness, the contact surface of the wafer has poor tightness, the vacuum degree is not easy to control, and the like, so that the wafer is easy to slip and break, scratches on the side surface of the wafer are more easy to occur during polishing, the damage degree of finished products is high, the qualification rate is low, an adhesion layer is usually added for enhancing adsorption positioning, but the process and the device have high structural complexity, the adhesion layer is additionally introduced, the difficulty is increased during the removal of the wafer, products are not damaged, the wafer is easy to pollute, the defects in application are obvious, especially, the process is complex, the damage rate is high during wafer polishing, and the production efficiency is greatly influenced, so that the wafer polishing process and the device are improved.
Disclosure of Invention
The invention provides a vacuum adsorption template for a semiconductor wafer polishing device and a device comprising the template, which solve the technical problems of complex process, large pollution, high cost and time and labor consumption of the conventional wafer polishing process.
The technical scheme adopted by the invention is as follows: the vacuum adsorption template for the semiconductor wafer polishing device comprises a ceramic disc positioned on a polishing head, and is characterized in that a groove is formed in the disc surface of the ceramic disc, a vacuum chuck is positioned in the groove, the circumferential edge of the vacuum chuck extends downwards to form a cap peak structure, and a channel is formed in the inner surface of the vacuum chuck and is connected with a vacuum generating structure by means of a vacuum hole penetrating through the ceramic disc to form vacuum adsorption positioning on a wafer.
Further, the section of the vacuum sucker is in a U shape.
Further, the vacuum chuck is made of polytetrafluoroethylene.
Further, the thickness of the outer contour of the vacuum chuck is consistent with the depth of the groove on the ceramic disk; the thickness of the inner contour is consistent with the thickness required to be achieved after the single-sided polishing of the wafer.
Furthermore, the channels are uniformly distributed on the inner surface of the vacuum chuck.
Further, the channels are symmetrically arranged to form a sector.
Further, the grooves formed in the surface of the ceramic disc are cylindrical.
Further, the ceramic disk is vacuum-adsorbed on the polishing head.
Further, the vacuum chuck is positioned in the groove by vacuum adsorption through the pore canal, or is bonded or embedded in the groove.
The invention also provides a single-sided polishing device for the semiconductor wafer, which comprises any one of the vacuum adsorption templates.
In the above technical scheme, a vacuum adsorption template for a semiconductor wafer polishing device is provided, which is used for positioning a wafer so as to realize wafer polishing, the vacuum adsorption template comprises a ceramic disc, the ceramic disc is positioned on a polishing head, the positioning mode can be bonding, sleeving, clamping or vacuum adsorption positioning, the key design of the invention is that a groove is formed on the disc surface of the ceramic disc, a vacuum chuck is positioned in the groove, the positioning mode of the vacuum chuck in the groove can be bonding or vacuum adsorption, etc., the circumferential edge of the vacuum chuck extends downwards to form a cap peak structure, and as the circumferential edge extends downwards, a concave accommodating cavity is formed in the middle part, the wafer is embedded into the concave accommodating cavity and does not slip, namely the cap peak structure can be effectively used for fixing the wafer and preventing the slip; the inner surface of the vacuum chuck is provided with a channel, the channel is communicated with a penetrating vacuum hole arranged on the ceramic disk, the other end of the vacuum hole is connected with a vacuum generating structure to form a vacuum channel so as to form vacuum adsorption positioning on the wafer, and the positioning principle is that after the wafer is placed into a containing cavity of the vacuum chuck, the vacuum generating structure is started, negative pressure is transmitted to the channel through the vacuum hole so as to realize vacuum adsorption positioning on the upper surface of the wafer; on the other hand, the cap peak structure around the vacuum chuck can play a role in protecting the side surface of the wafer from scratch damage, further can adjust the inner diameter of the cap peak or improve the inner surface of the cap peak, can also form friction resistance with the side surface of the wafer, prevent the wafer from sliding down, loosening and the like, and form five-face wrapping and firm positioning on the upper surface and the side surface of the wafer.
The beneficial effects of the invention are as follows: according to the vacuum adsorption template for the semiconductor wafer polishing device, the technical scheme of adding the vacuum chuck with the cap peak structure by improving the ceramic disc structure is adopted, so that vacuum adsorption positioning, side protection and clamping positioning are realized, the process links of adhering wax, removing wax and the like are omitted when the wafer is polished, the processing time is greatly shortened, and pollution caused by incomplete wax removal in the adhering wax process is avoided; the cap peak structure has the protection effect of scratch prevention on the wafer, and the side thickness can be adjusted so as to play a stable positioning and retaining role on the wafer, thereby improving the yield and thickness uniformity and reducing the production cost; the arrangement of the vacuum chuck enables the polishing mould and the device to be more suitable for polishing semiconductor material wafers which need volatile elements to be formed, such as Si, ge, gaAs, inP, and the like, and has a protective effect on the wafers.
Drawings
FIG. 1 is a schematic cross-sectional view of a vacuum suction template for a semiconductor wafer polishing apparatus according to example 1;
FIG. 2 is a schematic view showing the structure of a vacuum chuck with a wafer positioned in accordance with embodiment 1;
FIG. 3 is a schematic bottom view of the ceramic disk of FIG. 1 with a wafer and vacuum chuck positioned;
in the figure, 1, a ceramic disc; 1-1, a vacuum hole, 2, a vacuum chuck; 2-1 parts of cap peak, 2-2 parts of channel, 3 parts of wafer; 4. and a polishing head.
Detailed Description
The following detailed description of the embodiments is provided to illustrate the structure and the method of using the device of the present invention, but not to limit the scope of the invention in any way, and any improvement, modification, or the like, by those skilled in the art according to the technical scheme should be included in the scope of the present invention.
Example 1
The key design of this embodiment is that a groove is formed on the disk surface of the ceramic disk 1, and the shape of the groove is consistent with that of the wafer 3 to be polished, such as square or other, and cylindrical in this embodiment; the number of grooves formed on the surface of the ceramic disc 1 can be specifically customized according to actual practice, and 2 grooves are formed in the embodiment; the vacuum chuck 2 is positioned in the groove in a vacuum adsorption mode, the circumferential edge of the vacuum chuck 2 extends downwards to form a hat brim 2-1 structure, as the circumferential edge extends downwards, the middle part forms a concave accommodating cavity, the wafer 3 is embedded into the concave accommodating cavity, and the hat brim 2-1 structure can protect the side surface of the wafer 3 from scratch damage; the inner surface of the vacuum chuck 2 is provided with a channel 2-2, the ceramic disk 1 is provided with a vacuum hole 1-1 penetrating the inner surface of the vacuum chuck 2, the channel 2-2 is communicated with the vacuum hole 1-1, the vacuum hole 1-1 is connected with a vacuum generating structure, in the embodiment, the vacuum generating structure is a polishing head 4, after a wafer 3 is placed into a containing cavity of the vacuum chuck 2, the vacuum generating structure is started, negative pressure is transmitted to the channel 2-2 through the vacuum hole 1-1, so that vacuum adsorption is formed on the upper surface of the wafer 3, the wafer is firmly positioned, and the wafer is not easy to slip, and can be effectively used for fixing the wafer 3 and preventing the slip. In the above structure, the ceramic disc 1 is vacuum-adsorbed on the polishing head 4, the vacuum chuck 2 is embedded in the groove of the ceramic disc 1 and further positioned by vacuum adsorption, the wafer 3 is embedded in the accommodating cavity of the vacuum chuck 2 and further positioned by vacuum adsorption, and three vacuum adsorption positioning is realized by means of conventional duct branches. For the convenience of application, the section of the vacuum chuck 2 is in a shape of a reverse U, namely an inverted U-shaped, right-angle groove, the plane of the inner surface is used for adsorbing the wafer 3, and the circumferential surface is used for surrounding the side surface of the wafer 3, so that the wafer 3 is protected from being scratched and damaged.
The vacuum chuck 2 is made of polytetrafluoroethylene, and is made of polytetrafluoroethylene, more preferably, the hardness is in the range of 65-90 (Shore D), the wafer can be effectively protected from being scratched, the hardness is proper, the broken wafer is not easy to damage, meanwhile, the vacuum chuck is high-temperature resistant, acid and alkali resistant, various organic solvents are resistant, and the vacuum chuck cannot be corroded by polishing liquid.
The thickness of the outer outline of the vacuum chuck 2 is consistent with the depth of the groove on the ceramic disk 1, so that after the vacuum chuck 2 is installed, the lower end face of the vacuum chuck 2 and the lower end face of the ceramic disk 1 are on the same plane, the height of the inner outline of the vacuum chuck 2 is consistent with the thickness required to be achieved after the single-sided polishing of the wafer 3, the target thickness can be achieved through one step of polishing, and the time waste and efficiency reduction caused by measuring the thickness after the first polishing and polishing for the second time or more times until the target thickness in the conventional wax adhesion mode are avoided. The inner diameter of the vacuum chuck 2 is slightly larger than or equal to the diameter of the wafer 3 to be polished, and the outer diameter is equal to or slightly smaller than the inner diameter of the groove on the ceramic disk 1, so that the vacuum chuck 2 is embedded into the ceramic disk 1 and is not easy to slip.
The channels 2-2 are uniformly distributed on the inner surface of the vacuum chuck 2, and in the embodiment, the channels 2-2 are symmetrically arranged to form a sector shape, as shown in fig. 3, the channels are uniformly arranged, so that the vacuum negative pressure born by each part of the wafer 3 is ensured to be equivalent, the inclination of the wafer 3 is avoided, and the yield is improved to be uniform with the thickness of each part of the wafer 3 after polishing.
Example 2
Unlike embodiment 1, in this embodiment, the vacuum chuck 2 is bonded in the groove of the ceramic disk 1 to achieve positioning, and if the ceramic disk 1 needs to be replaced, the vacuum is removed, and the ceramic disk 1 can be replaced.
The InP wafer is respectively put into a common porous ceramic vacuum adsorption template and the vacuum adsorption template described in the embodiment 1, single-sided polishing is carried out, the vacuum adsorption template described in the embodiment 1 has large adsorption force and firm adsorption, no falling phenomenon exists, and the side surfaces and the adsorbed surfaces are not scratched and worn under the same vacuum negative pressure; the shedding rate in the common porous ceramic vacuum adsorption template is higher than 30%, and the occurrence rate of side scratch or adsorbed surface scratch and the like is higher than 30%; the wafer in the vacuum adsorption template of the embodiment 1 is well polished after slightly increasing the vacuum negative pressure, and the wafer in the common porous ceramic vacuum adsorption template is cracked, mainly because the common porous ceramic vacuum adsorption template has overlarge hardness, low surface flatness and smoothness, and serious damage to the wafer or cracking caused by stress concentration.
In summary, the vacuum adsorption template and the polishing device for the semiconductor wafer polishing device provided by the invention have the advantages of simple and compact structure, easiness in operation and control, and greatly improved yield in the wafer polishing process.
Claims (7)
1. The vacuum adsorption template for the semiconductor wafer polishing device comprises a ceramic disc (1) positioned on a polishing head (4), and is characterized in that a groove is formed in the disc surface of the ceramic disc (1), a vacuum chuck (2) is positioned in the groove, the circumferential edge of the vacuum chuck (2) extends downwards to form a hat brim (2-1) structure, a channel (2-2) is formed in the inner surface of the vacuum chuck (2), and the vacuum chuck is connected with a vacuum generating structure by means of a vacuum hole (1-1) penetrating through the ceramic disc (1) to form vacuum adsorption positioning on a wafer (3);
the section of the vacuum sucker (2) is in a U shape;
the channels (2-2) are symmetrically arranged to form a sector;
the thickness of the outer contour of the vacuum sucker (2) is consistent with the depth of the groove on the ceramic disc (1); the thickness of the inner contour is consistent with the thickness required to be achieved after the single-sided polishing of the wafer (3).
2. Vacuum adsorption template according to claim 1, characterized in that the vacuum chuck (2) is of polytetrafluoroethylene material.
3. The vacuum adsorption template according to claim 1, wherein the channels (2-2) are uniformly distributed on the inner surface of the vacuum chuck (2).
4. Vacuum adsorption template according to claim 1, characterized in that the grooves on the surface of the ceramic disc (1) are cylindrical.
5. Vacuum adsorption template according to claim 1, characterized in that the ceramic disc (1) is vacuum-adsorbed on a polishing head.
6. Vacuum suction template according to claim 1, characterized in that the vacuum chuck (2) is positioned in a groove or glued or embedded in a groove by means of vacuum suction of a duct.
7. A single-sided polishing apparatus for a semiconductor wafer, characterized in that the polishing apparatus comprises the vacuum adsorption template according to any one of claims 1 to 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711328463.0A CN108356684B (en) | 2017-12-13 | 2017-12-13 | Vacuum adsorption template for semiconductor wafer polishing device and polishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711328463.0A CN108356684B (en) | 2017-12-13 | 2017-12-13 | Vacuum adsorption template for semiconductor wafer polishing device and polishing device |
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| Publication Number | Publication Date |
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| CN108356684A CN108356684A (en) | 2018-08-03 |
| CN108356684B true CN108356684B (en) | 2024-02-06 |
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| CN201711328463.0A Active CN108356684B (en) | 2017-12-13 | 2017-12-13 | Vacuum adsorption template for semiconductor wafer polishing device and polishing device |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109397070A (en) * | 2018-10-24 | 2019-03-01 | 中国科学院上海技术物理研究所 | The substrate of a kind of indium phosphide wafer and its epitaxial wafer piece polishes mold |
| CN112792711B (en) * | 2020-12-31 | 2022-05-17 | 武汉风帆电化科技股份有限公司 | Crystal silicon wafer alkali polishing device and polishing process |
| CN113649949A (en) * | 2021-08-24 | 2021-11-16 | 上海致领半导体科技发展有限公司 | Multi-path vacuum chuck component for polishing semiconductor wafer |
| CN114559369B (en) * | 2022-02-10 | 2023-06-23 | 中国电子科技集团公司第十一研究所 | Limiting bonding die for back thinning of infrared detector |
| CN115106927B (en) * | 2022-06-28 | 2024-06-11 | 东莞市盈鑫半导体材料有限公司 | Negative pressure thermal bonding process for wax-free polishing adsorption pad |
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| TW407088B (en) * | 1998-06-05 | 2000-10-01 | Memc Electronic Materials | Apparatus for polishing silicon wafers |
| TW430587B (en) * | 1998-03-23 | 2001-04-21 | Shinetsu Handotai Kk | Grinding or polishing method and device for semiconductor silicon single crystal wafer |
| JP2004025352A (en) * | 2002-06-25 | 2004-01-29 | Sumitomo Mitsubishi Silicon Corp | Polishing method and device of semiconductor wafer |
| CN202357026U (en) * | 2011-11-21 | 2012-08-01 | 中芯国际集成电路制造(上海)有限公司 | Grinding device |
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| CN107127674A (en) * | 2017-07-08 | 2017-09-05 | 上海致领半导体科技发展有限公司 | A kind of ceramic load plate for semiconductor wafer polishing |
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2017
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Patent Citations (7)
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|---|---|---|---|---|
| TW430587B (en) * | 1998-03-23 | 2001-04-21 | Shinetsu Handotai Kk | Grinding or polishing method and device for semiconductor silicon single crystal wafer |
| TW407088B (en) * | 1998-06-05 | 2000-10-01 | Memc Electronic Materials | Apparatus for polishing silicon wafers |
| JP2004025352A (en) * | 2002-06-25 | 2004-01-29 | Sumitomo Mitsubishi Silicon Corp | Polishing method and device of semiconductor wafer |
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