CN113649949A - Multi-path vacuum chuck component for polishing semiconductor wafer - Google Patents
Multi-path vacuum chuck component for polishing semiconductor wafer Download PDFInfo
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- CN113649949A CN113649949A CN202110974235.0A CN202110974235A CN113649949A CN 113649949 A CN113649949 A CN 113649949A CN 202110974235 A CN202110974235 A CN 202110974235A CN 113649949 A CN113649949 A CN 113649949A
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- China
- Prior art keywords
- vacuum chuck
- negative pressure
- polishing
- wafer
- passages
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a multi-channel vacuum chuck component for polishing a semiconductor wafer, which comprises a vacuum chuck, negative pressure equipment, a patch area, a negative pressure channel and a polishing solution channel. The vacuum chuck is provided with the plurality of negative pressure passages, and the negative pressure passages generate negative pressure to adsorb the wafer, so that the defects of fixing the wafer by sticking wax in the prior art are overcome, meanwhile, the vacuum chuck is also provided with the plurality of polishing solution passages, so that the vacuum chuck can be used for inputting various polishing solutions, and the sticking area protrudes outwards, so that the polishing solutions are distributed more uniformly, and the grinding effect is greatly improved.
Description
Technical Field
The invention relates to the field of semiconductor wafer polishing, in particular to a multi-channel vacuum chuck component for semiconductor wafer polishing.
Background
At present, in the existing semiconductor wafer polishing equipment, a rotating pressure plate is arranged at the top, a rotating grinding plate is arranged below the pressure plate, a ceramic plate adhered with a wax-free polishing template or adhered with a wafer by wax is arranged in the middle, the top is controlled by the pressure plate, the pressure plate rotates, the grinding plate also rotates, and the wafer is fixed on the wax-free polishing template or adhered on the ceramic plate by wax.
The wax-free polishing template causes the problems of poor wafer polishing precision, easy wafer running, wafer breakage and the like; when a wax pasting process is used, special wax pasting equipment is needed, wax belongs to heavy oil stain and is difficult to clean, wax cleaning equipment is needed, the equipment is expensive, a plurality of groups of ceramic carrying discs need to be configured in the production process of normal equipment, each rotating disc is expensive, the wafer is generally thin, polishing liquid on the periphery of the wafer is extruded under the action of pressure, the polishing liquid in the near-center area of the traditional ceramic carrying disc is little, and the polishing liquid flows outside the ceramic carrying disc, so that the polishing liquid is unevenly distributed, and the polishing of the middle part of the wafer is less; meanwhile, the conventional ceramic turntable is difficult to manufacture the wafer attachment region into a convex shape due to the processing cost.
Disclosure of Invention
Accordingly, to address the above-described deficiencies, the present invention herein provides a multi-pass vacuum chuck assembly for polishing a semiconductor wafer.
The invention is realized in such a way that a multi-channel vacuum chuck component for polishing a semiconductor wafer is constructed, the device comprises a vacuum chuck, negative pressure equipment, a patch area, a negative pressure channel and a polishing solution channel, the upper end of the vacuum chuck is connected with the negative pressure equipment, the bottom of the vacuum chuck is provided with a plurality of patch areas, the patch areas are provided with a plurality of negative pressure channels, the bottom of the vacuum chuck is also provided with the polishing solution channel, the periphery of the bottom of the vacuum chuck is provided with a plurality of first channels, and the side edge and the top of the vacuum chuck are respectively provided with a plurality of second channels and third channels.
Preferably, the patch area is provided in two or more, and the patch area protrudes outward.
Preferably, the negative pressure passage is provided with more than two negative pressure passages, and the negative pressure passage is of a microporous structure and has a diameter of less than 0.5 mm.
Preferably, the polishing solution passages are provided in two or more numbers and are disposed between the patch regions in a distributed manner.
The invention has the following advantages: the present invention provides, by improvement, a multi-pass vacuum chuck assembly for semiconductor wafer polishing, having the following improvements over the same type of apparatus:
the advantages are that: according to the multi-channel vacuum chuck component for polishing the semiconductor wafer, the vacuum chuck is provided with the negative pressure channels, and the negative pressure channels generate negative pressure to adsorb the wafer, so that the defect of fixing the wafer by sticking wax in the prior art is overcome, meanwhile, the vacuum chuck is also provided with the polishing solution channels, the multi-channel vacuum chuck component can be used for inputting various polishing solutions, and the sticking area protrudes outwards, so that the polishing solutions are distributed more uniformly, and the grinding effect is greatly improved.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic side view of the vacuum chuck of the present invention;
fig. 3 is a schematic view of the bottom structure of the vacuum chuck of the present invention.
Wherein: a vacuum chuck-1, a negative pressure device-2, a patch area-3, a negative pressure passage-4 and a polishing solution passage-5.
Detailed Description
The present invention will be described in detail with reference to fig. 1 to 3, and the technical solutions in the embodiments of the present invention will be clearly and completely described, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a multi-channel vacuum chuck component for polishing a semiconductor wafer through improvement, which comprises a vacuum chuck 1, a negative pressure device 2, a patch area 3, a negative pressure channel 4 and a polishing solution channel 5, wherein the negative pressure device 2 is connected to the upper end of the vacuum chuck 1, the bottom of the vacuum chuck 1 is provided with a plurality of patch areas 3, the patch areas 3 are provided with a plurality of negative pressure channels 4, and the bottom of the vacuum chuck 1 is also provided with the polishing solution channel 5.
Further, the patch area 3 is provided with more than two, and the patch area 3 protrudes outwards, so that the polishing solution is distributed more uniformly.
Further, the negative pressure passage 4 is provided with more than two, can adsorb a plurality of wafers simultaneously to the negative pressure passage 4 is microporous structure, and its diameter is less than 0.5mm, is convenient for better absorption wafer, improves the grinding effect.
Further, the polishing solution passages 5 are disposed in two or more numbers and distributed between the pad areas 3 for inputting the polishing solution, so that the polishing solution is distributed more uniformly, and the plurality of polishing solution passages 5 can be used for a plurality of polishing solutions.
The invention provides a multi-channel vacuum chuck component for polishing a semiconductor wafer through improvement, which has the following working principle;
firstly, the upper end of a vacuum sucker 1 is connected with a negative pressure device 2 for generating vacuum negative pressure, the bottom of the vacuum sucker 1 is provided with a plurality of patch areas 3, the patch areas 3 are provided with a plurality of negative pressure passages 4, and after negative pressure is generated through the negative pressure passages 4, a wafer is attached to the patch areas 3 for subsequent polishing work;
secondly, still be provided with polishing solution passageway 5 in vacuum chuck 1 bottom for input polishing solution on vacuum chuck 1, polishing solution passageway 5 distributes and sets up between paster region 3 simultaneously, makes polishing solution distribution more even, and the wafer cooperates the polishing solution to carry out polishing work.
The invention provides a multi-channel vacuum chuck component for polishing a semiconductor wafer through improvement, a plurality of negative pressure channels 4 are arranged on a vacuum chuck 1, and the negative pressure channels 4 generate negative pressure to adsorb the wafer, so that the defects of fixing the wafer by wax sticking in the prior art are overcome, meanwhile, a plurality of polishing solution channels 5 are also arranged on the vacuum chuck 1 and can be used for inputting various polishing solutions, and a sticking area 3 protrudes outwards, so that the polishing solutions are distributed more uniformly, and the grinding effect is greatly improved.
The basic principles and main features of the present invention and the advantages of the present invention have been shown and described, and the standard parts used in the present invention are all available on the market, the special-shaped parts can be customized according to the description and the accompanying drawings, the specific connection mode of each part adopts the conventional means of bolt and rivet, welding and the like mature in the prior art, the machinery, parts and equipment adopt the conventional type in the prior art, and the circuit connection adopts the conventional connection mode in the prior art, and the details are not described herein.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (4)
1. A multi-pass vacuum chuck assembly for polishing semiconductor wafers, comprising: the polishing device structurally comprises a vacuum chuck (1), a negative pressure device (2), a patch area (3), a negative pressure passage (4) and a polishing solution passage (5), wherein the negative pressure device (2) is connected to the upper end of the vacuum chuck (1), the multiple patch areas (3) are arranged at the bottom of the vacuum chuck (1), the multiple negative pressure passages (4) are arranged on the patch areas (3), and the polishing solution passage (5) is arranged at the bottom of the vacuum chuck (1).
2. The multi-pass vacuum chuck assembly for polishing semiconductor wafers as set forth in claim 1 wherein: the patch areas (3) are more than two, and the patch areas (3) protrude outwards.
3. The multi-pass vacuum chuck assembly for polishing semiconductor wafers as set forth in claim 1 wherein: the negative pressure passages (4) are more than two, and the negative pressure passages (4) are of a microporous structure, and the diameter of each negative pressure passage is less than 0.5 mm.
4. The multi-pass vacuum chuck assembly for polishing semiconductor wafers as set forth in claim 1 wherein: the polishing solution passages (5) are arranged in more than two numbers and are distributed among the patch areas (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110974235.0A CN113649949A (en) | 2021-08-24 | 2021-08-24 | Multi-path vacuum chuck component for polishing semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110974235.0A CN113649949A (en) | 2021-08-24 | 2021-08-24 | Multi-path vacuum chuck component for polishing semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113649949A true CN113649949A (en) | 2021-11-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110974235.0A Pending CN113649949A (en) | 2021-08-24 | 2021-08-24 | Multi-path vacuum chuck component for polishing semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113649949A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117373963A (en) * | 2023-12-05 | 2024-01-09 | 青岛华芯晶电科技有限公司 | Negative pressure control method in gallium oxide wafer etching and polishing process |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1334583A (en) * | 1970-07-01 | 1973-10-24 | Signetics Corp | Vacuum chuck assemblies |
| JPH10217115A (en) * | 1997-02-04 | 1998-08-18 | Tokyo Seimitsu Co Ltd | Polishing device |
| JP2000052237A (en) * | 1998-08-07 | 2000-02-22 | Okamoto Machine Tool Works Ltd | Polishing device and polishing method of wafer |
| JP2002036100A (en) * | 2000-07-21 | 2002-02-05 | Fujikoshi Mach Corp | Wafer polishing method and wafer polishing device |
| CN205734229U (en) * | 2016-07-13 | 2016-11-30 | 广东工业大学 | A kind of ultra-smooth plane lapping burnishing device of vac sorb clamping |
| CN108356684A (en) * | 2017-12-13 | 2018-08-03 | 中国电子科技集团公司第十三研究所 | A kind of semiconductor wafer polishing apparatus vacuum suction template and burnishing device |
-
2021
- 2021-08-24 CN CN202110974235.0A patent/CN113649949A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1334583A (en) * | 1970-07-01 | 1973-10-24 | Signetics Corp | Vacuum chuck assemblies |
| JPH10217115A (en) * | 1997-02-04 | 1998-08-18 | Tokyo Seimitsu Co Ltd | Polishing device |
| JP2000052237A (en) * | 1998-08-07 | 2000-02-22 | Okamoto Machine Tool Works Ltd | Polishing device and polishing method of wafer |
| JP2002036100A (en) * | 2000-07-21 | 2002-02-05 | Fujikoshi Mach Corp | Wafer polishing method and wafer polishing device |
| CN205734229U (en) * | 2016-07-13 | 2016-11-30 | 广东工业大学 | A kind of ultra-smooth plane lapping burnishing device of vac sorb clamping |
| CN108356684A (en) * | 2017-12-13 | 2018-08-03 | 中国电子科技集团公司第十三研究所 | A kind of semiconductor wafer polishing apparatus vacuum suction template and burnishing device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117373963A (en) * | 2023-12-05 | 2024-01-09 | 青岛华芯晶电科技有限公司 | Negative pressure control method in gallium oxide wafer etching and polishing process |
| CN117373963B (en) * | 2023-12-05 | 2024-02-20 | 青岛华芯晶电科技有限公司 | Negative pressure control method in gallium oxide wafer etching and polishing process |
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