CN108344887A - probe head structure of cantilever type probe card - Google Patents
probe head structure of cantilever type probe card Download PDFInfo
- Publication number
- CN108344887A CN108344887A CN201711131960.1A CN201711131960A CN108344887A CN 108344887 A CN108344887 A CN 108344887A CN 201711131960 A CN201711131960 A CN 201711131960A CN 108344887 A CN108344887 A CN 108344887A
- Authority
- CN
- China
- Prior art keywords
- probe
- circuit board
- wafer
- probe card
- thermal insulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000523 sample Substances 0.000 title claims abstract description 78
- 239000000919 ceramic Substances 0.000 claims abstract description 30
- 238000009413 insulation Methods 0.000 claims abstract description 27
- 239000011347 resin Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000004411 aluminium Substances 0.000 claims 1
- 239000000470 constituent Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 238000012360 testing method Methods 0.000 abstract description 34
- 238000000034 method Methods 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 26
- 238000010586 diagram Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06716—Elastic
- G01R1/06727—Cantilever beams
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07314—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Leads Or Probes (AREA)
Abstract
A probe head structure of a cantilever type probe card comprises a circuit board, a bonding layer, a plurality of probes and a heat insulation ceramic chip from top to bottom in sequence, wherein the lower surface of the circuit board is provided with a plurality of circuit contacts; therefore, during wafer high and low temperature test operation, the heat insulation ceramic wafer on the bottom layer of the probe head can transmit heat energy upwards in an insulation mode, the probe is maintained in a good contact state during test operation, and the problem that the wafer probe is large in size and small in size when scratches are generated during the high and low temperature test process is avoided.
Description
Technical field
The present invention relates to a kind of technical field of cantalever type probe card more particularly to a kind of structural improvement to probe,
It is allowed to be more suitable for wafer high/low temperature test jobs.
Background technology
With the trend development that electronic product is lightening, semiconductor manufacturing mode becomes larger towards diameter wafer, and element is highly dense
Degreeization is advanced with the direction that circuit reduces, and the technique of complication also causes yield control to be not easy, and test condition is more harsh.According to
Integrated circuit quality requirements are found out outside product up to specification in addition to being tested with basic electric property, can also carry out wafer high/low temperature
Test, imports various temperature in testing, the health in addition to that can ensure product, can also detect the product of possible premature failure,
Thus it picks out the crystal grain for meeting application specification, ensures shipment quality and by technique keyholed back plate, to reach the mesh of cost reduction
's.
In executing the test of wafer high/low temperature, probe itself is also in the environment of high/low temperature, how to reduce temperature pair
The influence of probe precision, and promote the primary project of yield correctness.As shown in Figure 1, being existing cantalever type probe card
Schematic diagram, the probe card include a circuit board 11, one be fixed on 11 bottom surface of circuit board a fixed ring 12 and more utilization
Resin 14 (epoxy) is obliquely fixed on the probe 13 of 12 bottom surface of fixed ring, and 3 top of probe is simultaneously electric with the circuit board 11
Property connection.But when such cantalever type probe is stuck in progress wafer height test, have the shortcomings that several following：
1. when carrying out high/low temperature test, which is the resin 14 closest to the part of wafer, is surveyed in hot and cold alternation
, can be small when big when causing wafer probe scratch (Wafer Probe Mark) because of the problem of expanding with heat and contract with cold in examination, it influences to test good
Rate；
2. being chronically in the test environment of hot and cold alternation, resin 14 can be caused to do sth. in advance aging and burst apart, if falling on crystalline substance
On circle, the risk of wafer damage (wafer damage) will result in.
3. in the structure of the probe card, which is usually to be made of metal, and coefficient of thermal expansion is high, and heat source also holds
It is easily transferred at this, and then 12 size of fixed ring is made to generate variation, influence probe contact condition and wafer probe scratch position,
It is related also to influence yield.
As wafer circuit and spacing increasingly reduce, element densification, allowable error smaller, how in wafer high/low temperature
In test, cantalever type probe card is allowed to be affected by temperature reduction, will be even more important in test jobs in the future, then present invention design
The probe header structure of one cantalever type probe card.
Invention content
The main mesh of the present invention is to provide a kind of probe header structure of cantalever type probe card, is mainly tested in wafer high/low temperature
In, it is desirable to the influence by temperature to probe card precision itself minimizes, therefore by structure closest to the component of wafer heat source
It is constituted using the material of low thermal coefficient of expansion, on the one hand blocks the transmission of thermal energy, on the one hand reduce the change of the size caused by heat
Change, therefore the present invention is to be located at the bottom of probe using a thermal insulation ceramics piece, due to the swollen system of the heat expansion of the thermal insulation ceramics piece
Number is low, and the heat of high/low temperature test is blocked to transmit, into the yield and accuracy improved in test process.
In order to achieve the above object, the present invention includes sequentially from top to bottom circuit board, cementation layer, more probes and heat-insulated pottery
The lower surface of tile, the circuit board has multiple circuit junctions, which has inclined-plane, and the inclined-plane is to face the electricity
Road plate, multiple probe distributions are on the inclined-plane, which simultaneously contacts with the corresponding circuit junction, which is located at
Between the thermal insulation ceramics piece and the circuit board, the position of the fixed probe and the thermal insulation ceramics piece.
The thermal insulation ceramics piece includes the wherein at least one such as aluminium oxide, aluminium nitride, zirconium oxide in the present invention, and thus low-heat is swollen
The material of coefficient, blocks the transmission of thermal energy, is also avoided that size can change because of temperature.
The cementation layer is made of the mixture of resin or resin and ceramic powders in the present invention, and no existing metal is consolidated
Determine ring structure, coefficient of thermal expansion is small, also ensures that the stability of whole probe card size.
In summary, the probe header structure of cantalever type probe card of the present invention have the advantages that it is several following：
1. being located at the bottom of probe using the thermal insulation ceramics piece, heat is blocked to be transferred to cementation layer, therefore can be by heat expansion
The influence of shrinkage reduces, therefore the problem that while not having big when wafer probe scratch (Wafer Probe Mark) is small.
2. because the thermal insulation ceramics piece is distributed in the bottom, existing resin is not had bursts apart and fall problem, and because of the heat-insulated pottery
Tile blocks heat source, the cementation layer heat affecting that is cooled repeatedly to become smaller, be not easy aging ahead of time, prolong the service life.
All it is to be made of the small material of heat expansion coefficient of expansion, therefore allow and expand with heat and contract with cold 3. below circuit board other than probe
Influencing the situation of probe contact condition reduces, and is suitable for the wafer test operation that modern devices densification is reduced with circuit.
Attached drawing and component symbol is coordinated to do more detailed description to embodiments of the present invention below, so that art technology
Personnel can implement according to this after studying this specification carefully.
Description of the drawings
Fig. 1 is the schematic diagram of existing cantalever type probe card.
Fig. 2 is the diagrammatic cross-section of first embodiment of the invention.
Fig. 3 A are the cross-sectional schematic of second embodiment of the invention.
Fig. 3 B are electrically connected at the enlarged diagram of circuit board for the probe in Fig. 3 A.
Fig. 4 is the schematic diagram of actual operation of the present invention.
Fig. 5 is the sectional perspective enlarged diagram of the thermal insulation ceramics piece of actual operation of the present invention.
Reference numeral is as follows：
21 circuit boards
211 circuit junctions
212 intermediate plates
213 forms
22 cemented layers
23 probes
231 contact tips
232 connecting pins
24 thermal insulation ceramics pieces
241 inclined-planes
242 viewing windows
61 retaining elements
62 lens
63 diffuser
64 reinforcing rings
7 wafers
8 heating microscope carriers
Specific implementation mode
As shown in Fig. 2, for the sectional view of the present invention.The present invention cantalever type probe card probe header structure from top to bottom according to
Sequence includes a circuit board 21, cementation layer 22, more probes 23 and thermal insulation ceramics piece 24.
Thus circuit board 21 carries out the dependence test of wafer circuit, 21 bottom surface of circuit board has in combination with a tester table
Multiple circuit junctions 211, circuit junction 211 with corresponding probe 23 being electrically connected.It is to weld in this embodiment
Mode is fixed, but is not limited thereto, and as shown in Fig. 3 A and Fig. 3 B, it is in the font of falling ㄇ that an intermediate plate 212, intermediate plate 212, which also can be used,
In actual mounting process, the opposite circuit that intermediate plate 212 can be fixed on circuit board 21 using a part piece machine in advance connects
At point 211, it is inserted between the gap that intermediate plate 212 connects with circuit board 21 during follow-up assembling, then by probe 23, in turn
Fixed and completion is electrically connected operation, reduces the working hour in production and assembly.
Cementation layer 22 is responsible for more probes 23 and thermal insulation ceramics 24 being fixed on 21 bottom surface of circuit board, and cementation layer 22 can be by
The mixture of resin or resin and ceramic powders is constituted, and after being coated between thermal insulation ceramics piece 24 and circuit board 21, then is passed through
Heating is allowed to curing molding.
Probe 23 is strip needle body, and it is probe tip 231 that is superfine small and extending downwardly, this probe to have both ends, one end
Tip 231 is the contact jaw with test wafer, and the other end is connecting pin 232, to be electrically connected with circuit junction 211.
Thermal insulation ceramics piece 24 be low material, such as aluminium oxide, aluminium nitride, zirconium oxide of a coefficient of thermal expansion etc. wherein at least
It is a kind of.Thermal insulation ceramics piece 24 have face-up inclined-plane 241, in the present embodiment every potsherd 24 be an annular wafer.Assembling
Thermal insulation ceramics piece 24 is position in the bottom of probe card afterwards, is transmitted to separate thermal energy.
Then the assembling mode of the present invention is described.First by more 23 sequentials of probe in thermal insulation ceramics piece 24
On inclined-plane 241, it is used in combination the raw material such as resin of cementation layer 22 tentatively fixed, after all probes 23 are fixed on thermal insulation ceramics piece 24,
Probe 23 and thermal insulation ceramics piece 24 are further fixed on by 21 bottom surface of circuit board with more 22 raw material of cementation layer again, will finally be visited
The connecting pin 232 of needle 23 is connected with corresponding circuit junction 211, that is, completes whole assembling.
As shown in figure 4, for the schematic diagram of actual operation of the present invention.Cantalever type probe card of the present invention is suitable for various chips
Test, provides the mode being relatively often used and explains, such as in the present embodiment for the test of image sensing chip (CIS).Cause
The center of this circuit board 21 in the present embodiment has a perforative form 213, fixed with a retaining element 61 in form 213
One lens 62, and on circuit board 21 separately installation hide we a diffuser (Diffuser) 63 for form 213,63 energy of diffuser
Light source is set uniformly to spread and be projected to lens 62 downwards.Circuit board 21 separately combines a reinforcing ring 64 above, can further increase
It whole intensity and is combined for other testing elements.When carrying out the test of wafer high/low temperature, wafer 7 is disposed on heating microscope carrier
Above 8, different test temperatures is provided by heating microscope carrier 8.
In wafer high/low temperature test jobs, light source irradiation can be provided, light is projected to crystalline substance through diffuser 63, lens 62
At circle 7, heating microscope carrier 8 provides corresponding test temperature.Since probe of the present invention is to face heating by thermal insulation ceramics piece 24
Microscope carrier 8 can block heat to transmit, and because its coefficient of thermal expansion is minimum, size changing amount is small, can also make size and the position of probe scratch
It is consistent to set maintenance, is tested with preferable test mode, it is ensured that and maintain test yield and correctness.
The structural schematic diagram of single probe is only drawn in Fig. 4, but when practice is in wafer test, it can be single
Multigroup probe and dependence test component is arranged in probe card, and to promote testing efficiency, model is protected in this part in the application of the present invention
In enclosing.For actual production and assembling convenience, as shown in figure 5, for the part of the thermal insulation ceramics piece in actual operation of the present invention
Three-dimensional enlarged diagram.This embodiment is also to apply to the test of image sensing chip (CIS).Thermal insulation ceramics piece 24 is a big face
Long-pending heat shield, with the opposite inclined-plane 241 in multigroup position, the inclined-plane 241 of every group of test cell is two and is in this embodiment
Left and right relatively side by side, but is not limited thereto.Other two inclined-planes, 241 centre position has a viewing window 242, in test jobs
In allow light to cast out.Rest part is all same as the previously described embodiments.
The foregoing is merely to explain presently preferred embodiments of the present invention, it is not intended to do any form to the present invention according to this
On limitation, therefore, it is all have make any modification or change for the present invention under identical spirit, all should include
The invention is intended to the scopes of protection.
Claims (5)
1. a kind of probe header structure of cantalever type probe card, includes from top to bottom：Circuit board, cementation layer, more probes and every
The lower surface of thermal Ceramics piece, the circuit board has multiple circuit junctions, which has inclined-plane, and the inclined-plane is to face
The circuit board, on the inclined-plane, one end of the every probe is simultaneously contacted with the corresponding circuit junction the more probe distributions,
The cementation layer is located between the thermal insulation ceramics piece and the circuit board, the position of the fixed probe and the thermal insulation ceramics piece.
2. the probe header structure of cantalever type probe card as described in claim 1, wherein the thermal insulation ceramics piece include aluminium oxide, nitrogen
Change the wherein at least one such as aluminium, zirconium oxide.
3. the constituent of the probe header structure of cantalever type probe card as described in claim 1, the wherein cementation layer includes resin
Or the mixture of resin and ceramic powders.
4. the probe header structure of cantalever type probe card as described in claim 1, wherein the probe one end are adopted with the circuit junction
It is welded and fixed.
5. the probe header structure of cantalever type probe card as described in claim 1, wherein the probe one end are with the circuit junction
It is fixed by an intermediate plate, and completes to be electrically connected.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW106103069A TWI591348B (en) | 2017-01-25 | 2017-01-25 | Cantilever probe card probe tip structure |
| TW106103069 | 2017-01-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108344887A true CN108344887A (en) | 2018-07-31 |
Family
ID=60048605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711131960.1A Pending CN108344887A (en) | 2017-01-25 | 2017-11-15 | probe head structure of cantilever type probe card |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108344887A (en) |
| TW (1) | TWI591348B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020220605A1 (en) * | 2019-04-30 | 2020-11-05 | 云谷（固安）科技有限公司 | Probe module, and machining method and test method therefor |
| CN112816746A (en) * | 2021-01-06 | 2021-05-18 | 上海华虹宏力半导体制造有限公司 | Probe card structure |
| CN113495177A (en) * | 2020-04-07 | 2021-10-12 | 松翰股份有限公司 | Micro-electro-mechanical probe test head with 3D circuit and probe card |
| TWI763183B (en) * | 2020-01-31 | 2022-05-01 | 南亞科技股份有限公司 | Wafer test system and methods thereof |
| US11543433B2 (en) * | 2019-12-24 | 2023-01-03 | SK Hynix Inc. | Probe test card and method of manufacturing the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7212559B2 (en) * | 2019-03-18 | 2023-01-25 | 住友重機械工業株式会社 | Shape measuring device and shape measuring method |
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| CN1822341A (en) * | 2005-02-16 | 2006-08-23 | 旺矽科技股份有限公司 | Suspension arm probe |
| CN203849299U (en) * | 2014-05-09 | 2014-09-24 | 中芯国际集成电路制造(北京)有限公司 | High temperature test probe card |
| CN105277755A (en) * | 2015-11-23 | 2016-01-27 | 上海华岭集成电路技术股份有限公司 | Cantilever type probe system |
| CN106018891A (en) * | 2015-03-26 | 2016-10-12 | 旺矽科技股份有限公司 | Cantilever probe card using coaxial needle |
| CN106338625A (en) * | 2015-07-06 | 2017-01-18 | 创意电子股份有限公司 | Probe card |
-
2017
- 2017-01-25 TW TW106103069A patent/TWI591348B/en active
- 2017-11-15 CN CN201711131960.1A patent/CN108344887A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1822341A (en) * | 2005-02-16 | 2006-08-23 | 旺矽科技股份有限公司 | Suspension arm probe |
| CN203849299U (en) * | 2014-05-09 | 2014-09-24 | 中芯国际集成电路制造(北京)有限公司 | High temperature test probe card |
| CN106018891A (en) * | 2015-03-26 | 2016-10-12 | 旺矽科技股份有限公司 | Cantilever probe card using coaxial needle |
| CN106338625A (en) * | 2015-07-06 | 2017-01-18 | 创意电子股份有限公司 | Probe card |
| CN105277755A (en) * | 2015-11-23 | 2016-01-27 | 上海华岭集成电路技术股份有限公司 | Cantilever type probe system |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020220605A1 (en) * | 2019-04-30 | 2020-11-05 | 云谷（固安）科技有限公司 | Probe module, and machining method and test method therefor |
| US11543433B2 (en) * | 2019-12-24 | 2023-01-03 | SK Hynix Inc. | Probe test card and method of manufacturing the same |
| US11933818B2 (en) | 2019-12-24 | 2024-03-19 | SK Hynix Inc. | Probe test card and method of manufacturing the same |
| TWI763183B (en) * | 2020-01-31 | 2022-05-01 | 南亞科技股份有限公司 | Wafer test system and methods thereof |
| US11486899B2 (en) | 2020-01-31 | 2022-11-01 | Nanya Technology Corporation | Wafer test system and methods thereof |
| CN113495177A (en) * | 2020-04-07 | 2021-10-12 | 松翰股份有限公司 | Micro-electro-mechanical probe test head with 3D circuit and probe card |
| CN112816746A (en) * | 2021-01-06 | 2021-05-18 | 上海华虹宏力半导体制造有限公司 | Probe card structure |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI591348B (en) | 2017-07-11 |
| TW201827834A (en) | 2018-08-01 |
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Application publication date: 20180731 |
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