CN108342622A - 一种稀土涂层复合铝硅铜合金的制备方法 - Google Patents
一种稀土涂层复合铝硅铜合金的制备方法 Download PDFInfo
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- 229910052761 rare earth metal Inorganic materials 0.000 title claims abstract description 30
- 150000002910 rare earth metals Chemical class 0.000 title claims abstract description 30
- 239000000956 alloy Substances 0.000 title claims abstract description 29
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 27
- 229910018594 Si-Cu Inorganic materials 0.000 title claims abstract description 14
- 229910008465 Si—Cu Inorganic materials 0.000 title claims abstract description 14
- 238000000576 coating method Methods 0.000 title claims abstract description 9
- 239000011248 coating agent Substances 0.000 title claims abstract description 8
- 150000001875 compounds Chemical class 0.000 title claims abstract description 7
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 38
- 238000007670 refining Methods 0.000 claims description 26
- 238000005096 rolling process Methods 0.000 claims description 20
- 229910000838 Al alloy Inorganic materials 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 239000004411 aluminium Substances 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000005498 polishing Methods 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- 238000003723 Smelting Methods 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910052727 yttrium Inorganic materials 0.000 claims description 8
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000002893 slag Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910000676 Si alloy Inorganic materials 0.000 claims description 4
- -1 aluminium bismuth silicon Chemical compound 0.000 claims description 4
- 238000005266 casting Methods 0.000 claims description 4
- 239000012459 cleaning agent Substances 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 238000000280 densification Methods 0.000 claims description 4
- 238000001540 jet deposition Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 claims description 4
- 238000004062 sedimentation Methods 0.000 claims description 4
- 239000013077 target material Substances 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000000227 grinding Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 229910001285 shape-memory alloy Inorganic materials 0.000 description 2
- 238000009718 spray deposition Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- ZBZJXHCVGLJWFG-UHFFFAOYSA-N trichloromethyl(.) Chemical compound Cl[C](Cl)Cl ZBZJXHCVGLJWFG-UHFFFAOYSA-N 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 240000006409 Acacia auriculiformis Species 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- LEHUDBPYSAPFFO-UHFFFAOYSA-N alumane;bismuth Chemical compound [AlH3].[Bi] LEHUDBPYSAPFFO-UHFFFAOYSA-N 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 229910001000 nickel titanium Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/02—Alloys based on aluminium with silicon as the next major constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21B—ROLLING OF METAL
- B21B1/00—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
- B21B1/02—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling heavy work, e.g. ingots, slabs, blooms, or billets, in which the cross-sectional form is unimportant ; Rolling combined with forging or pressing
- B21B1/026—Rolling
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
- C22C1/026—Alloys based on aluminium
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
- C22C1/03—Making non-ferrous alloys by melting using master alloys
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C14/00—Alloys based on titanium
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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Abstract
本发明公开了一种稀土涂层复合铝硅铜合金的制备方法,本发明通过调整工艺以及参数解提升了合金的针孔度;本发明采用磁控溅射的方法,并采用低温轧制的手段,在铝硅铜合金表面形成稀土记忆合金层,能够将提升该合金的屈服强度,使得铝硅铜合金的表面均匀致密、膜基结合强度高、力学性能优良。
Description
所属技术领域
本发明涉及铝合金制造领域,具体涉及一种稀土涂层复合铝硅铜合金的制备方法。
背景技术
合金材料由于在材料中存在多种金属元素,因此可以具有不同金属元素的特性,具备了不同金属元素的特性后,扩大了合金材料的性能和使用范围。铜铝合金合金的使用范围很广,可以用于轻工、重工、电子行业等。例如被用来制作弹簧、电子设备的金属部分、五金器材、医疗设备等
Al-Si-Cu系铝合金锭是一种具有良好综合性能的压铸铝合金,现如今被于汽车零部件行业广泛应用。目前许多生产汽车零部件的用户在对于Al-Si-Cu系铝合金锭的各种性能要求越来越严苛,由于铝锭针孔度问题,从而导致的产品零件疏松、开裂,不良率较大。
形状记忆合金(Shape Memory Alloy,SMA)是指经过适当变形后,在一定物理条件变化下能自动做功而恢复变形前形状的合金。形状记忆合金因其具有较高的可恢复性形变,已成为一种重要的功能材料,获得了广泛应用。镍钛系形状记忆具有记忆恢复原形、无磁性、耐磨耐蚀、耐高温、无毒性的特点。不过,当前的形状记忆合金的屈服强度一般在700MPa以下。
发明内容
本发明提供一种稀土涂层复合铝硅铜合金的制备方法,本发明通过调整工艺以及参数解提升了合金的针孔度;本发明采用磁控溅射的方法,并采用低温轧制的手段,在铝硅铜合金表面形成稀土记忆合金层,能够将提升该合金的屈服强度,使得铝硅铜合金的表面均匀致密、膜基结合强度高、力学性能优良。
为了实现上述目的,本发明提供了一种稀土涂层复合铝硅铜合金的制备方法,该方法包括如下步骤:
(1)制备铝铜合金基材
将质量百分比80%的熟铝及质量百分比20%纯铜投入熔炉中,进行助熔,总熔化时长为3-5小时,熔化终止温度控制为850±10℃;
用铁锹在合金液表面撒上15-20KG清渣剂,用铁扒轻轻敲打液面5-10分钟后扒渣,并将铝渣清出炉口,不能用铁扒搅动合金液;
第一次精炼:合金液温度控制为820±10℃;精炼时间控制在20分钟;扒渣时间≧15分钟;精炼剂数量控制为1.6kg/吨;第二次精炼:合金液温度控制为820±10℃;精炼时间控制在20分钟;扒渣时间≧15分钟;精炼剂数量控制为1KG/吨;精炼后铸锭,得到铝铜合金基材;
(2)将材料按比例配料,其中配料比例为硅的质量百分比为21%-35%,余量为上述铝铜合金基材;
将上述配料熔炼、搅拌,喷射沉积得到锭坯;将锭坯进行致密化加工,即得到致密度大于99%的铝铋硅合金基材;
(3)基材预处理
所述基材预处理,可依次进行研磨抛光、超声清洗和离子源清洗;
(4)制备稀土记忆合金靶材
该稀土记忆合金靶材由钛、镍、铝、钇、铬、硅元素构成;
按重量份包括如下组分:钛55-65份,镍10-12份;铝6-9份;钇1-3份、铬4-6份;硅1-2份;
采用熔炼法制备得到稀土记忆合金靶材 ;
(5)采用上述合金靶材,使用磁控溅射方法,在上述基材上形成薄膜状的稀土记忆合金层:
抽真空至10-4Pa以上,充入氮气,然后再抽真空至10-4Pa,调整工作电压为500V,溅射占空比65-68%,开始进行溅射沉积,控制厚度为150-250μm得到薄膜状的稀土记忆合金层;
启动轧机系统,设定上下轧辊的速比为1.2-1.5 ,设定每次轧制形变量为2-3%;设定低速辊的速度为0.05-0.1m/s,开始具有稀土记忆合金层的钨镍合金的轧制过程;一次轧制过后,重复进行轧制3-5次,轧制过程中,保持环境温度为-30至-20摄氏度;在150-200摄氏度进行低温热处理1-2h,得到产品。
本发明具备以下优点:
(1)本发明通过调整工艺以及参数解提升了合金的针孔度;
(2)本发明采用磁控溅射的方法,并采用低温轧制的手段,在铝硅铜合金表面形成稀土记忆合金层,能够将提升该合金的屈服强度,使得铝硅铜合金的表面均匀致密、膜基结合强度高、力学性能优良。
具体实施方式
实施例一
将质量百分比80%的熟铝及质量百分比20%纯铜投入熔炉中,进行助熔,总熔化时长为3小时,熔化终止温度控制为850±10℃。
用铁锹在合金液表面撒上15KG清渣剂,用铁扒轻轻敲打液面5分钟后扒渣,并将铝渣清出炉口,不能用铁扒搅动合金液。
第一次精炼:合金液温度控制为820±10℃;精炼时间控制在20分钟;扒渣时间≧15分钟;精炼剂数量控制为1.6KG/吨;第二次精炼:合金液温度控制为820±10℃;精炼时间控制在20分钟;扒渣时间≧15分钟;精炼剂数量控制为1KG/吨;精炼后铸锭,得到铝铜合金基材。
将材料按比例配料,其中配料比例为硅的质量百分比为21%,余量为上述铝铜合金基材。
将上述配料熔炼、搅拌,喷射沉积得到锭坯;具体为将上述配料在中频感应炉内熔炼,升温至900℃,充 分搅拌,用熔剂(30%Nacl+47%Kcl+23%冰晶石)进行覆盖造渣,并用六氯乙烷除气;用导流管将金属熔液注入喷射沉积装置中,采用高压氮气直接将金属液滴雾化沉积在基体上,制备成一定尺寸的锭坯。其中,气体压强为0.8MPa,喷嘴直径为2.8mm,喷嘴距基体距离为200mm; 将锭坯进行致密化加工,即得到致密度大于99%的铝铋硅合金基材。
基材预处理,所述基材预处理,可依次进行研磨抛光、超声清洗和离子源清洗。所述研磨抛光,可将基材先在600目的金刚石砂轮盘上进行粗磨10min,然后在1200目的金刚石砂轮盘上进行细磨10min,再用W2.5的金刚石抛光粉进行抛光至试样表面均匀光亮,所述超声清洗,可将研磨抛光后的基材按以下顺序清洗,丙酮超声清洗5min→无水乙醇超声清洗5min→烘干待用,所述离子源清洗,可采用霍尔离子源对基材进行清洗5min,压强为2×10-2Pa,基材温度为300℃,氩气通量为10sccm,偏压为-100V,阴极电流为29.5A,阴极电压为19V,阳极电流为7A,阳极电压为80V,以清除基材表面的吸附气体以及杂质,提高沉积涂层与基材的结合强度以及成膜质量。
制备稀土记忆合金靶材,该稀土记忆合金靶材由钛、镍、铝、钇、铬、硅元素构成;按重量份包括如下组分:钛55份,镍10份;铝6份;钇1份、铬4份;硅1份;采用熔炼法制备得到稀土记忆合金靶材 。
采用上述合金靶材,使用磁控溅射方法,在上述基材上形成薄膜状的稀土记忆合金层:抽真空至10-4Pa以上,充入氮气,然后再抽真空至10-4Pa,调整工作电压为500V,溅射占空比65%,开始进行溅射沉积,控制厚度为150μm得到薄膜状的稀土记忆合金层。
启动轧机系统,设定上下轧辊的速比为1.2 ,设定每次轧制形变量为2%;设定低速辊的速度为0.05m/s,开始具有稀土记忆合金层的钨镍合金的轧制过程;一次轧制过后,重复进行轧制3次,轧制过程中,保持环境温度为-30至-20摄氏度;在150摄氏度进行低温热处理1h,得到产品。
实施例二
将质量百分比80%的熟铝及质量百分比20%纯铜投入熔炉中,进行助熔,总熔化时长为5小时,熔化终止温度控制为850±10℃。
用铁锹在合金液表面撒上20KG清渣剂,用铁扒轻轻敲打液面10分钟后扒渣,并将铝渣清出炉口,不能用铁扒搅动合金液。
第一次精炼:合金液温度控制为820±10℃;精炼时间控制在20分钟;扒渣时间≧15分钟;精炼剂数量控制为1.6KG/吨;第二次精炼:合金液温度控制为820±10℃;精炼时间控制在20分钟;扒渣时间≧15分钟;精炼剂数量控制为1KG/吨;精炼后铸锭,得到铝铜合金基材。
将上述配料熔炼、搅拌,喷射沉积得到锭坯;具体为将上述配料在中频感应炉内熔炼,升温至1250℃,充 分搅拌,用熔剂(30%Nacl+47%Kcl+23%冰晶石)进行覆盖造渣,并用六氯乙烷除气;用导流管将金属熔液注入喷射沉积装置中,采用高压氮气直接将金属液滴雾化沉积在基体上,制备成一定尺寸的锭坯。其中,气体压强为1.0MPa,喷嘴直径为3.5mm,喷嘴距基体距离为300mm; 将锭坯进行致密化加工,即得到致密度大于99%的铝铋硅合金基材。
基材预处理,所述基材预处理,可依次进行研磨抛光、超声清洗和离子源清洗。所述研磨抛光,可将基材先在600目的金刚石砂轮盘上进行粗磨10min,然后在1200目的金刚石砂轮盘上进行细磨10min,再用W2.5的金刚石抛光粉进行抛光至试样表面均匀光亮,所述超声清洗,可将研磨抛光后的基材按以下顺序清洗,丙酮超声清洗5min→无水乙醇超声清洗5min→烘干待用,所述离子源清洗,可采用霍尔离子源对基材进行清洗5min,压强为2×10-2Pa,基材温度为300℃,氩气通量为10sccm,偏压为-100V,阴极电流为29.5A,阴极电压为19V,阳极电流为7A,阳极电压为80V,以清除基材表面的吸附气体以及杂质,提高沉积涂层与基材的结合强度以及成膜质量。
制备稀土记忆合金靶材,该稀土记忆合金靶材由钛、镍、铝、钇、铬、硅元素构成;按重量份包括如下组分:钛65份,镍12份;铝9份;钇3份、铬6份;硅2份;采用熔炼法制备得到稀土记忆合金靶材 。
采用上述合金靶材,使用磁控溅射方法,在上述基材上形成薄膜状的稀土记忆合金层:抽真空至10-4Pa以上,充入氮气,然后再抽真空至10-4Pa,调整工作电压为500V,溅射占空比68%,开始进行溅射沉积,控制厚度为250μm得到薄膜状的稀土记忆合金层。
启动轧机系统,设定上下轧辊的速比为1.5 ,设定每次轧制形变量为3%;设定低速辊的速度为0.1m/s,开始具有稀土记忆合金层的钨镍合金的轧制过程;一次轧制过后,重复进行轧制5次,轧制过程中,保持环境温度为-20摄氏度;在200摄氏度进行低温热处理2h,得到产品。
Claims (1)
1.一种稀土涂层复合铝硅铜合金的制备方法,该方法包括如下步骤:
(1)制备铝铜合金基材
将质量百分比80%的熟铝及质量百分比20%纯铜投入熔炉中,进行助熔,总熔化时长为3-5小时,熔化终止温度控制为850±10℃;
用铁锹在合金液表面撒上15-20KG清渣剂,用铁扒轻轻敲打液面5-10分钟后扒渣,并将铝渣清出炉口,不能用铁扒搅动合金液;
第一次精炼:合金液温度控制为820±10℃;精炼时间控制在20分钟;扒渣时间≧15分钟;精炼剂数量控制为1.6kg/吨;第二次精炼:合金液温度控制为820±10℃;精炼时间控制在20分钟;扒渣时间≧15分钟;精炼剂数量控制为1KG/吨;精炼后铸锭,得到铝铜合金基材;
(2)将材料按比例配料,其中配料比例为硅的质量百分比为21%-35%,余量为上述铝铜合金基材;
将上述配料熔炼、搅拌,喷射沉积得到锭坯;将锭坯进行致密化加工,即得到致密度大于99%的铝铋硅合金基材;
(3)基材预处理
所述基材预处理,可依次进行研磨抛光、超声清洗和离子源清洗;
(4)制备稀土记忆合金靶材
该稀土记忆合金靶材由钛、镍、铝、钇、铬、硅元素构成;
按重量份包括如下组分:钛55-65份,镍10-12份;铝6-9份;钇1-3份、铬4-6份;硅1-2份;
采用熔炼法制备得到稀土记忆合金靶材 ;
(5)采用上述合金靶材,使用磁控溅射方法,在上述基材上形成薄膜状的稀土记忆合金层:
抽真空至10-4Pa以上,充入氮气,然后再抽真空至10-4Pa,调整工作电压为500V,溅射占空比65-68%,开始进行溅射沉积,控制厚度为150-250μm得到薄膜状的稀土记忆合金层;
启动轧机系统,设定上下轧辊的速比为1.2-1.5 ,设定每次轧制形变量为2-3%;设定低速辊的速度为0.05-0.1m/s,开始具有稀土记忆合金层的钨镍合金的轧制过程;一次轧制过后,重复进行轧制3-5次,轧制过程中,保持环境温度为-30至-20摄氏度;在150-200摄氏度进行低温热处理1-2h,得到产品。
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