CN108319107A - A kind of production method of nano-imprint stamp - Google Patents
A kind of production method of nano-imprint stamp Download PDFInfo
- Publication number
- CN108319107A CN108319107A CN201810145263.XA CN201810145263A CN108319107A CN 108319107 A CN108319107 A CN 108319107A CN 201810145263 A CN201810145263 A CN 201810145263A CN 108319107 A CN108319107 A CN 108319107A
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- Prior art keywords
- nano
- production method
- imprint stamp
- photoresist
- disk
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Abstract
The present invention relates to micro-nano processing technique fields, specifically disclose a kind of production method of nano-imprint stamp, wherein the production method of the nano-imprint stamp includes：Disk, litho machine, photoresist and etching machine are provided；It is laid with photoresist on the disk, the photoresist is carried out by the litho machine to be lithographically derived targeted graphical；Disk with the targeted graphical is put into the etching machine and is performed etching, obtains object construction as template.The production method processing step of nano-imprint stamp provided by the invention is simple and convenient, is suitable for realizing volume production.
Description
Technical field
The present invention relates to micro-nano processing technique field more particularly to a kind of production methods of nano-imprint stamp.
Background technology
In the long korneforos of semiconductor technology development, significantly reduce with the characteristic size of device, photoetching also constantly faces
New challenge, and this also directly results in the reason of Next Generation Lithographies cost increases considerably.Down feature sizes are just meaned
The wavelength for reducing and being exposed in photoetching, this also means that the replacement of the new used equipment of photoetching, however the price of lithographic equipment is often
People is allowed to be difficult to receive.
Nanometer embossing is a kind of advanced nanotechnology being different from conventional lithographic techniques, it breaches traditional photoetching
Figure on mold is transferred directly on substrate by problem during characteristic size reduces, to reach mass production
Purpose.Nanometer embossing has that high-resolution, high efficiency, low cost, process principle be simple, simple operation and other advantages.Nanometer
The manufacture craft of coining affects production efficiency.
Therefore, how to provide a kind of production method of the simple nano-imprint stamp of processing step becomes people in the art
Member's technical problem urgently to be resolved hurrily.
Invention content
The present invention is directed at least solve one of the technical problems existing in the prior art, a kind of nano-imprint stamp is provided
Production method, to solve the problems of the prior art.
As one aspect of the present invention, a kind of production method of nano-imprint stamp is provided, wherein the nano impression
The production method of template includes：
Disk, litho machine, photoresist and etching machine are provided；
It is laid with photoresist on the disk, the photoresist is carried out by the litho machine to be lithographically derived targeted graphical；
Disk with the targeted graphical is put into the etching machine and is performed etching, obtains object construction as template.
Preferably, the flatness of the disk is less than 3 μm.
Preferably, the etching machine includes dry etching machine.
Preferably, when being performed etching by the dry etching machine, the pressure of etching cavity 25mTorr ~ 60mTorr it
Between.
Preferably, when being performed etching by the dry etching machine, the throughput ratio of etchant gas and deposition gases is 1
Between ~ 2.
Preferably, when being performed etching by the dry etching machine, radio-frequency power is between 1500W ~ 3000W.
Preferably, the thickness evenness STDEV of the photoresist<0.6nm.
Preferably, the section angle of the photoresist is more than 85 °.
Preferably, the photoresist includes the photoresist of model SPR955.
Preferably, the material of the disk includes silicon.
The production method of nano-imprint stamp provided by the invention carries out pattern transfer, this method by mechanical means
Lower resolution ratio is not by optical wavelength, numerical aperture of objective and photoresist surface light reflection, photoresist scattering-in, substrate reflection
With the limitation of the factors such as developer, the resolution limit of conventional lithography process can be broken through；Operation can be repeated in batches, and figure can
To keep good uniformity and repeatability；Rigid template machining accuracy is very high, and it can be used repeatedly, can both save and add
Work cost, and process time can be shortened；The present invention also simple, simple operation and other advantages with process principle.
Description of the drawings
Attached drawing is to be used to provide further understanding of the present invention, an and part for constitution instruction, with following tool
Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings：
Fig. 1 is the flow chart of the production method of nano-imprint stamp provided by the invention.
Specific implementation mode
The specific implementation mode of the present invention is described in detail below in conjunction with attached drawing.It should be understood that this place is retouched
The specific implementation mode stated is merely to illustrate and explain the present invention, and is not intended to restrict the invention.
As one aspect of the present invention, a kind of production method of nano-imprint stamp is provided, wherein as shown in Figure 1, institute
The production method for stating nano-imprint stamp includes：
S110, disk, litho machine, photoresist and etching machine are provided；
S120, it is laid with photoresist on the disk, the photoresist is carried out by the litho machine to be lithographically derived target figure
Shape；
S130, it the disk with the targeted graphical is put into the etching machine performs etching, obtain object construction as mould
Plate.
The production method of nano-imprint stamp provided by the invention carries out pattern transfer, this method by mechanical means
Lower resolution ratio is not by optical wavelength, numerical aperture of objective and photoresist surface light reflection, photoresist scattering-in, substrate reflection
With the limitation of the factors such as developer, the resolution limit of conventional lithography process can be broken through；Operation can be repeated in batches, and figure can
To keep good uniformity and repeatability；Rigid template machining accuracy is very high, and it can be used repeatedly, can both save and add
Work cost, and process time can be shortened；The present invention also simple, simple operation and other advantages with process principle.
Specifically, the flatness of the disk is less than 3 μm.
It is to be appreciated that the flatness for the disk chosen affects the quality of nano-imprint stamp, therefore, surface is selected
The clean and preferable disk of flatness, and flatness is less than 3 μm.
Specifically, the etching machine includes dry etching machine.
Specifically, when being performed etching by the dry etching machine, the pressure of etching cavity 25mTorr ~ 60mTorr it
Between.
Specifically, when being performed etching by the dry etching machine, the throughput ratio of etchant gas and deposition gases is 1
Between ~ 2.
Specifically, when being performed etching by the dry etching machine, radio-frequency power is between 1500W ~ 3000W.
Preferably, the thickness evenness STDEV of the photoresist<0.6nm.
Preferably, the section angle of the photoresist is more than 85 °.
Preferably, the photoresist includes the photoresist of model SPR955.
It should be noted that by litho machine to the field-free flower of disk, no significant defect, photoresist after photoresist progress photoetching
Glue thickness uniformity STDEV<0.6nm, photoresist profile angle>85°.
It is understood that after etching, uniformity in the piece of obtained disk<2%, silicon column section angle is at 85 ° ~ 86.5 °
Between, corrosion depth is between 2 μm ~ 5 μm, and deposition and etch period ratio are between 0.5 ~ 3, and signal period corrosion depth is 0.05
μm ~ 0.1 μm between.
Preferably, the model Nikon I10 of the litho machine.
Preferably, the material of the disk includes silicon.
The specific implementation mode of production method about nano-imprint stamp is as follows：
A, clean surface and flatness preferable disk are provided, are based on Nikon I10 litho machines, SPR955 photoresists are as masking
Object carries out photoetching process.Piece is examined after cleaned, pretreatment, gluing, exposure, development, disk is field-free flower, no significant defect, photoetching
Glue glue thickness uniformity STDEV<0.6nm, photoresist profile angle>85 ° are considered as photoetching qualification.
B, after disk being passed to deep etching machine, wait for that intracavity gas ambient stable can carry out etching process.Deposition, corrosion
Time ratio between 0.5 ~ 3, signal period corrosion depth between 0.05 μm ~ 0.1 μm, chamber pressure 25mTorr ~
Between 60mTorr, etchant gas and deposition gases throughput sum-rate between 1 ~ 2, radio-frequency power 1500W ~ 3000W it
Between.It needs to ensure uniformity in disk piece after corrosion<2%, section angle is between 85 ° ~ 86.5 °, and corrosion depth is between 2 μm ~ 5 μm.
It is the manufacturing process of nano-imprint stamp in summary.
Therefore, the production method of nano-imprint stamp provided by the invention, processing step is simple, and all steps all use normal
Equipment and technique are advised, it is easy to operate.Once it is determined that photoetching and etching condition, can be used to prepare nano-imprint stamp.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, in the essence for not departing from the present invention
In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of production method of nano-imprint stamp, which is characterized in that the production method of the nano-imprint stamp includes：
Disk, litho machine, photoresist and etching machine are provided；
It is laid with photoresist on the disk, the photoresist is carried out by the litho machine to be lithographically derived targeted graphical；
Disk with the targeted graphical is put into the etching machine and is performed etching, obtains object construction as template.
2. the production method of nano-imprint stamp according to claim 1, which is characterized in that the flatness of the disk is small
In 3 μm.
3. the production method of nano-imprint stamp according to claim 1, which is characterized in that the etching machine includes dry method
Etching machine.
4. the production method of nano-imprint stamp according to claim 3, which is characterized in that pass through the dry etching machine
When performing etching, the pressure of etching cavity is between 25mTorr ~ 60mTorr.
5. the production method of nano-imprint stamp according to claim 3, which is characterized in that pass through the dry etching machine
When performing etching, the throughput ratio of etchant gas and deposition gases is between 1 ~ 2.
6. the production method of nano-imprint stamp according to claim 3, which is characterized in that pass through the dry etching machine
When performing etching, radio-frequency power is between 1500W ~ 3000W.
7. the production method of nano-imprint stamp according to claim 1, which is characterized in that the thickness of the photoresist is equal
Even property STDEV<0.6nm.
8. the production method of nano-imprint stamp according to claim 7, which is characterized in that the section angle of the photoresist
More than 85 °.
9. the production method of nano-imprint stamp according to claim 7, which is characterized in that the photoresist includes model
For the photoresist of SPR955.
10. the production method of nano-imprint stamp as claimed in any of claims 1 to 9, which is characterized in that described
The material of disk includes silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810145263.XA CN108319107A (en) | 2018-02-12 | 2018-02-12 | A kind of production method of nano-imprint stamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810145263.XA CN108319107A (en) | 2018-02-12 | 2018-02-12 | A kind of production method of nano-imprint stamp |
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| Publication Number | Publication Date |
|---|---|
| CN108319107A true CN108319107A (en) | 2018-07-24 |
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ID=62904057
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810145263.XA Pending CN108319107A (en) | 2018-02-12 | 2018-02-12 | A kind of production method of nano-imprint stamp |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110703577A (en) * | 2019-11-21 | 2020-01-17 | 苏州大学 | Preparation method of super-surface color hologram and optical system |
| CN112967986A (en) * | 2020-10-19 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Transfer component, preparation method thereof and transfer head |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101246307A (en) * | 2007-02-15 | 2008-08-20 | 联华电子股份有限公司 | Method for manufacturing autogram template by semiconductor technology and autogram template manufactured by the same |
| CN105137712A (en) * | 2015-07-21 | 2015-12-09 | 苏州大学 | Method for constructing organic liquid crystal molecule single-crystal micro-wire patterned array by nanoimprint technology |
-
2018
- 2018-02-12 CN CN201810145263.XA patent/CN108319107A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101246307A (en) * | 2007-02-15 | 2008-08-20 | 联华电子股份有限公司 | Method for manufacturing autogram template by semiconductor technology and autogram template manufactured by the same |
| CN105137712A (en) * | 2015-07-21 | 2015-12-09 | 苏州大学 | Method for constructing organic liquid crystal molecule single-crystal micro-wire patterned array by nanoimprint technology |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110703577A (en) * | 2019-11-21 | 2020-01-17 | 苏州大学 | Preparation method of super-surface color hologram and optical system |
| CN110703577B (en) * | 2019-11-21 | 2022-03-04 | 苏州大学 | Preparation method of super-surface color hologram and optical system |
| CN112967986A (en) * | 2020-10-19 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Transfer component, preparation method thereof and transfer head |
| CN112967986B (en) * | 2020-10-19 | 2022-06-21 | 重庆康佳光电技术研究院有限公司 | Transfer component, preparation method thereof and transfer head |
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Application publication date: 20180724 |