CN108319057A - Substrate edges processing method, mask plate - Google Patents
Substrate edges processing method, mask plate Download PDFInfo
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- CN108319057A CN108319057A CN201810269791.6A CN201810269791A CN108319057A CN 108319057 A CN108319057 A CN 108319057A CN 201810269791 A CN201810269791 A CN 201810269791A CN 108319057 A CN108319057 A CN 108319057A
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- Prior art keywords
- mask plate
- substrate
- pending substrate
- photoresist layer
- area
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
- G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1316—Methods for cleaning the liquid crystal cells, or components thereof, during manufacture: Materials therefor
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The present invention proposes a kind of method of substrate edges processing, mask, and the substrate edges processing method forms the first photoresist layer including the use of first device on pending substrate；Secondly, it is exposed using first the first photoresist layer of mask plate pair in exposure machine；Finally, pending substrate is handled by using second device, completes the side washing technique of pending substrate；The present invention carries out edge exposure technique by using exposure machine to pending substrate, improves the side washing precision of pending substrate；The present invention also eliminates the use for exposing side machine, saves the cost of board, shortens processing time, improves process efficiency.
Description
Technical field
The present invention relates to display field, more particularly to a kind of substrate edges processing method, mask plate.
Background technology
Liquid crystal display (Liquid Crystal Display, LCD) is the display being most widely used currently on the market
Product, production Technology is very ripe, and product yield is high, and production cost is relatively low, and market acceptance is high.And TFT-
LCD (Thin Film Transistor-Liquid Crystal Display, Thin Film Transistor-LCD) panel manufactures
Industry has developed for many years, the production procedure very refining and maturation for product.
In recent years, the development of small-medium size liquid crystal display is swift and violent.And in preparation process, in addition to necessary precision optics instrument
Device exposure machine, it is also necessary to the exposure side machine of side washing be used to carry out side washing to substrate.May require that generally for special metal layer makes
It uses and exposes the progress side washing of side machine, with metal layer and the photoresist etc. for removing substrate edges；
The technological process of traditional tft array includes following of cleaning, form a film, annealing, photoetching, etching, being ion implanted, removing photoresist
Circulation journey, wherein photoetching process include：Base-plate cleaning (Clean), hot plate baking (HotPlate), cold plate cool down (Cooling
Plate), HMDS lingings (Priming), photoresist coating (Resist Coating), removal substrate edges photoresist (Edge
Remover), number (Titler), edge exposure (Edge are carved in soft roasting (Pre-bake), exposure (Exposure), printing
Exposure), development (Development), hard baking (Hard Bake)；
Wherein, edge exposure technique is by removing residues such as the photoresist of substrate periphery or metal layers, to avoid rear
Continuous process contamination.But side machine is exposed due to being limited to simple technique, it is not high to expose side precision.
Invention content
The present invention provides a kind of substrate edges processing method, mask plates, to solve existing substrate edges exposure accuracy not
High technical problem.
To realize that said program, technical solution provided by the invention are as follows：
The present invention provides a kind of substrate edges processing methods, wherein including step：
One pending substrate is provided；
Using first device the first photoresist layer is formed on the pending substrate；
First photoresist layer is exposed using the first mask plate in exposure machine；
Edge treated is carried out to the pending substrate using second device.
According to one preferred embodiment of the present invention, utilize first mask plate to first photoresist in the exposure machine
Further include step before layer is exposed：
Using Barebone is marked on first mask plate.
According to one preferred embodiment of the present invention, include at least four labels on first mask plate.
According to one preferred embodiment of the present invention, include to the step of pending substrate progress side washing processing：
Developed to first photoresist layer on the pending substrate using second device；
Technique is etched to the pending substrate after development using 3rd device.
According to one preferred embodiment of the present invention, the mask plate includes transmission region and lightproof area, the lightproof area
Area be less than first photoresist layer area.
According to one preferred embodiment of the present invention, the lightproof area is the rectangle of rule.
According to one preferred embodiment of the present invention, the boundary of each lightproof area and each first photoresist region
The spacing on boundary is 9.5mm~10.5mm.
The invention also provides a kind of mask plates, wherein the mask plate is applied to aforesaid substrate border processing method.
According to one preferred embodiment of the present invention, the mask plate includes transmission region and lightproof area, the lightproof area
Area be less than pending substrate on the first photoresist layer area.
According to one preferred embodiment of the present invention, the lightproof area is the rectangle of rule, each lightproof area
The spacing on boundary and the boundary in each first photoresist region is 9.5mm~10.5mm.
Beneficial effects of the present invention：The present invention is by using exposure machine to the pending base of one of optical cover process technique of completion
Plate carries out edge exposure technique, improves the side washing precision of pending substrate；The present invention also eliminates the use for exposing side machine, saves
The cost of board shortens processing time, improves process efficiency.
Description of the drawings
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some invented
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is a kind of production method step schematic diagram of display panel of the preferred embodiment of the present invention；
Fig. 2 is that mask plate is put with pending substrate position in a kind of substrate edges processing method of the preferred embodiment of the present invention
Figure；
Fig. 3 is a kind of structure chart of mask plate of the preferred embodiment of the present invention.
Specific implementation mode
The explanation of following embodiment is referred to the additional illustration, to illustrate the present invention can be used to implement particular implementation
Example.The direction term that the present invention is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is with being given the same reference numerals in the figure.
Fig. 1 show the step schematic diagram of the excellent embodiment substrate edges processing method of the present invention, wherein the substrate edges
Processing method includes：
Step S10, one pending substrate is provided；
The pending substrate 102 provided in this step is the pending substrate after one of optical cover process technique
102, the optical cover process technique can complete the preparation of the film layers such as grid layer, source-drain electrode or other metal layers；It is described to wait locating
102 periphery of reason substrate can remain the residues such as photoresist or metal layer, subsequent technique not avoided to pollute, it is therefore desirable to carry out side washing
Processing.
Step S20, using first device the first photoresist layer is formed on the pending substrate；
The present invention mainly carries out edge treated using exposure machine to the pending substrate 102, and exposure machine is mainly profit
Image information on film or other transparent bodies is transferred to and is coated with photoactive substance by the ultraviolet light that UVA wavelength is sent out with light
Machinery equipment on surface；Therefore, before using exposure machine, the needs of pending substrate 102 coat in first device
One first photoresist forms the first photoresist layer, it is preferred that the first device is Photoresisting coating machines；
In addition, traditional side washing mode carries out side washing processing using side machine is exposed to substrate, traditional exposure side machine not use
Mask plate directly carries out side washing processing using existing tooling to pending substrate 102；The precision of traditional exposure side machine can only reach
0.5mm or so, and the precision for using exposure machine to carry out edge exposure technique can reach micron level；Therefore, compared with prior art,
The present invention increases one first mask plate 101 in exposure machine, and first mask plate 101 only carries out pending substrate 102
Edge exposure processing.
Step S30, using Barebone is marked on first mask plate；
Exposure machine (not shown) is mainly by lighting system, to Barebone, mask plate microscope carrier, glass substrate microscope carrier and optical system
System composition, this step mainly carry out alignment mark 103 using in the exposure machine to the first mask plate of Barebone pair 101；
In a preferred embodiment of the invention, the mask plate includes transmission region 106 and lightproof area 104, and described first
The transmission region 106 of mask plate 101 includes at least four labels 103, as shown in Fig. 2, in order to ensure first mask
The more accurate contraposition of version 101, the transmission region 106 of first mask plate 101 includes 21 labels 103.
Step S40, first photoresist layer is exposed using the first mask plate in exposure machine；
This step is mainly in exposure machine, using first mask plate 101 to first on the pending substrate 102
Photoresist layer carries out edge exposure；As shown in Fig. 2, the area of lightproof area 104 waits locating less than described in first mask plate 101
The area for the first photoresist layer being coated on reason substrate 102；Wherein, outside the lightproof area to the pending substrate 102
It is the region handled in this step to enclose region 105；
Preferably, the lightproof area of first mask plate 101 and first mask plate 101 is the shape of rule
Shape, such as rectangle or square etc.；In addition, every one side on each boundary of the lightproof area and first photoresist layer
The spacing on boundary is 10 ± 0.5mm, i.e., approximate range is 9.5mm~10.5mm.
Step S50, side washing processing is carried out to the pending substrate using second device.
This step predominantly carries out subsequent development and etch process to the pending substrate 102 through overexposure；
First, developed to first photoresist layer on the pending substrate 102 using second device, general profit
It will be washed by the first photoresist of exposed portion with developer, i.e., be only left unexposed first photoresist, then use deionization
Water washes away the first photoresist dissolved；And heated baking is carried out to the pending substrate 102 after developing, it allows unexposed
The first photoresist firmer be attached on the pending substrate 102；
Secondly, further include being handled the pending substrate 102 after development using 3rd device, described the
Three devices can be etching machine etc., using etch process or other side washing techniques, the film layer structure that will do not covered by the first photoresist
Removal, completes the edge treated of the pending substrate 102, and the pending substrate 102 is delivered to down in one of technique.
The present invention carries out edge exposure work by using exposure machine to the pending substrate for completing one of optical cover process technique
Skill improves the side washing precision of pending substrate；The present invention also eliminates the use for exposing side machine, saves the cost of board, contracts
Short processing time, improves process efficiency.
The invention also provides a kind of mask plates, wherein the mask plate is applied to pending described in above-described embodiment
The border processing method of substrate.
As shown in figure 3, the mask plate 201 includes transmission region 206 and lightproof area 204, the lightproof area 204
Area is less than the area of the first photoresist layer on pending substrate 202；Wherein, the lightproof area is to the pending substrate 202
Peripheral region 205 be the region that is handled of the pending substrate 202；
Preferably, the lightproof area 204 of the mask plate 201 and the mask plate 201 is the shape of rule, such as
Rectangle or square etc.；In addition, each boundary of the lightproof area 204 and each boundary of first photoresist layer
Spacing is 10 ± 0.5mm, i.e., approximate range is 9.5mm~10.5mm.
The present invention proposes a kind of method of substrate edges processing, mask, and the substrate edges processing method includes profit
The first photoresist layer is formed on pending substrate with first device；Secondly, first the first light of mask plate pair is utilized in exposure machine
Resistance layer is exposed；Finally, pending substrate is handled by using second device, completes the side washing work of pending substrate
Skill；The present invention carries out edge exposure technique by using exposure machine to pending substrate, improves the side washing essence of pending substrate
Degree；The present invention also eliminates the use for exposing side machine, saves the cost of board, shortens processing time, improves process efficiency.
In conclusion although the present invention is disclosed above with preferred embodiment, above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention is subject to the range that claim defines.
Claims (10)
1. a kind of substrate edges processing method, which is characterized in that including step：
One pending substrate is provided；
Using first device the first photoresist layer is formed on the pending substrate；
First photoresist layer is exposed using the first mask plate in exposure machine；
Edge treated is carried out to the pending substrate using second device.
2. manufacturing method according to claim 1, which is characterized in that utilize first mask plate in the exposure machine
Further include step before being exposed to first photoresist layer：
Using Barebone is marked on first mask plate.
3. production method according to claim 2, which is characterized in that include described at least four on first mask plate
Label.
4. manufacturing method according to claim 1, which is characterized in that carry out the step of side washing processing to the pending substrate
Suddenly include：
Developed to first photoresist layer on the pending substrate using second device；
Technique is etched to the pending substrate after development using 3rd device.
5. manufacturing method according to claim 1, which is characterized in that the mask plate includes transmission region and shading region
Domain, the area of the lightproof area are less than the area of first photoresist layer.
6. production method according to claim 5, which is characterized in that the lightproof area is the rectangle of rule.
7. production method according to claim 6, which is characterized in that the boundary of each lightproof area with it is each described
The spacing on the boundary in the first photoresist region is 9.5mm~10.5mm.
8. a kind of mask plate, which is characterized in that the mask plate is applied to a kind of such as base of claim 1 to 8 any one of them
Plate border processing method.
9. mask plate according to claim 8, which is characterized in that the mask plate includes transmission region and lightproof area,
The area of the lightproof area is less than the area of the first photoresist layer on pending substrate.
10. mask plate according to claim 8, which is characterized in that the lightproof area is the rectangle of rule, Mei Yisuo
The spacing for stating the boundary of lightproof area and the boundary in each first photoresist region is 9.5mm~10.5mm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810269791.6A CN108319057A (en) | 2018-03-29 | 2018-03-29 | Substrate edges processing method, mask plate |
| PCT/CN2019/077717 WO2019184694A1 (en) | 2018-03-29 | 2019-03-11 | Substrate edge processing method and mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810269791.6A CN108319057A (en) | 2018-03-29 | 2018-03-29 | Substrate edges processing method, mask plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108319057A true CN108319057A (en) | 2018-07-24 |
Family
ID=62898800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810269791.6A Pending CN108319057A (en) | 2018-03-29 | 2018-03-29 | Substrate edges processing method, mask plate |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108319057A (en) |
| WO (1) | WO2019184694A1 (en) |
Cited By (7)
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|---|---|---|---|---|
| CN109164677A (en) * | 2018-09-05 | 2019-01-08 | 京东方科技集团股份有限公司 | Photolithography method, the preparation method of flexible base board and photoresist drying unit |
| WO2019184694A1 (en) * | 2018-03-29 | 2019-10-03 | 武汉华星光电技术有限公司 | Substrate edge processing method and mask |
| CN110391135A (en) * | 2019-08-08 | 2019-10-29 | 武汉新芯集成电路制造有限公司 | Remove the manufacturing method of the remaining method of photoresist and semiconductor devices |
| CN110568730A (en) * | 2019-09-03 | 2019-12-13 | 武汉新芯集成电路制造有限公司 | Semiconductor edge photoresist removing method |
| CN112505957A (en) * | 2020-12-11 | 2021-03-16 | 深圳市华星光电半导体显示技术有限公司 | Substrate edge washing method, edge washing device and substrate |
| WO2021233121A1 (en) * | 2020-05-19 | 2021-11-25 | 长鑫存储技术有限公司 | Wafer edge exposure apparatus and method, and lithographic device |
| CN114872452A (en) * | 2022-05-25 | 2022-08-09 | Tcl华星光电技术有限公司 | Code printing method and code printing device |
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| WO2019184694A1 (en) * | 2018-03-29 | 2019-10-03 | 武汉华星光电技术有限公司 | Substrate edge processing method and mask |
| CN109164677A (en) * | 2018-09-05 | 2019-01-08 | 京东方科技集团股份有限公司 | Photolithography method, the preparation method of flexible base board and photoresist drying unit |
| CN109164677B (en) * | 2018-09-05 | 2021-12-07 | 京东方科技集团股份有限公司 | Photoetching method, preparation method of flexible substrate and photoresist drying device |
| US11249399B2 (en) | 2018-09-05 | 2022-02-15 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Photolithography method, method of preparing flexible substrate and photoresist drying device |
| CN110391135A (en) * | 2019-08-08 | 2019-10-29 | 武汉新芯集成电路制造有限公司 | Remove the manufacturing method of the remaining method of photoresist and semiconductor devices |
| CN110391135B (en) * | 2019-08-08 | 2022-02-08 | 武汉新芯集成电路制造有限公司 | Method for removing photoresist residue and method for manufacturing semiconductor device |
| CN110568730A (en) * | 2019-09-03 | 2019-12-13 | 武汉新芯集成电路制造有限公司 | Semiconductor edge photoresist removing method |
| WO2021233121A1 (en) * | 2020-05-19 | 2021-11-25 | 长鑫存储技术有限公司 | Wafer edge exposure apparatus and method, and lithographic device |
| US11822261B2 (en) | 2020-05-19 | 2023-11-21 | Changxin Memory Technologies, Inc. | Wafer edge exposure apparatus, wafer edge exposure method and photolithography device |
| CN112505957A (en) * | 2020-12-11 | 2021-03-16 | 深圳市华星光电半导体显示技术有限公司 | Substrate edge washing method, edge washing device and substrate |
| CN114872452A (en) * | 2022-05-25 | 2022-08-09 | Tcl华星光电技术有限公司 | Code printing method and code printing device |
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| WO2019184694A1 (en) | 2019-10-03 |
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