CN108313987A - Two-dimentional tellurium nanometer sheet and its preparation method and application - Google Patents
Two-dimentional tellurium nanometer sheet and its preparation method and application Download PDFInfo
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- CN108313987A CN108313987A CN201810135123.4A CN201810135123A CN108313987A CN 108313987 A CN108313987 A CN 108313987A CN 201810135123 A CN201810135123 A CN 201810135123A CN 108313987 A CN108313987 A CN 108313987A
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- tellurium nanometer
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- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 title claims abstract description 141
- 229910052714 tellurium Inorganic materials 0.000 title claims abstract description 138
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000002994 raw material Substances 0.000 claims abstract description 19
- 239000007791 liquid phase Substances 0.000 claims abstract description 18
- 230000003287 optical effect Effects 0.000 claims abstract description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 239000000523 sample Substances 0.000 claims description 19
- 239000006228 supernatant Substances 0.000 claims description 14
- 238000002604 ultrasonography Methods 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 238000005119 centrifugation Methods 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 4
- 238000001556 precipitation Methods 0.000 claims description 4
- 235000019441 ethanol Nutrition 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 15
- 239000000126 substance Substances 0.000 description 6
- 238000000862 absorption spectrum Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000001291 vacuum drying Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 241000219289 Silene Species 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- -1 germanium alkene Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/02—Elemental selenium or tellurium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0272—Selenium or tellurium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
The present invention provides a kind of two-dimentional tellurium nanometer sheet, the thickness of the two dimension tellurium nanometer sheet is 1 50nm.Two dimension tellurium nanometer sheet provided by the invention has excellent photodetection performance.The present invention also provides a kind of preparation methods of two-dimentional tellurium nanometer sheet, include the following steps：Tellurium raw material is provided, the tellurium raw material is removed using the method that liquid phase is removed, obtains two-dimentional tellurium nanometer sheet, the thickness of the two dimension tellurium nanometer sheet is 1 50nm.Two-dimentional tellurium nanometer sheet is made by non-laminar tellurium raw material in the method that the present invention uses liquid phase stripping for the first time, and peeling effect is good, and may be implemented to prepare two-dimentional tellurium nanometer sheet on a large scale, and cost is relatively low, and preparation method is simple to operation.The present invention also provides application of the two-dimentional tellurium nanometer sheet in optical detector.
Description
Technical field
The present invention relates to field of nanometer material technology, and in particular to a kind of two dimension tellurium nanometer sheet and its preparation method and application.
Background technology
Two-dimensional material, refer to electronics only can on the non-nanosize of two dimensions free movement (plane motion) material
Material, such as nano thin-film, superlattices, Quantum Well.Two-dimensional material is successfully divided along with 2004 Chesters Nian Man Geim groups of university
It separates out graphite material-graphene (graphene) of monoatomic layer and proposes.Including being referred to as the nitrogen of " white graphite "
Change boron, molybdenum disulfide, silene, germanium alkene, black phosphorus etc..
Those described above two-dimensional material is all stratified material, i.e., is made of stronger chemical bond in layer, and in layer
Between be made of weak Van der Waals force.Because being by mechanically pulling off method and liquid phase stripping method being easy to be removed into two-dimentional material
Material.But the type of these two-dimensional layer materials is limited, therefore this greatly limits the development of two-dimensional functional material.Hair
It is extremely urgent to open up a greater variety of two-dimensional functional materials.
Invention content
To solve the above problems, the present invention provides a kind of two-dimentional tellurium nanometer sheet, the two dimension tellurium nanometer sheet is a kind of new
The two-dimensional functional material of type has the function of good photodetection.
First aspect present invention provides a kind of two-dimentional tellurium nanometer sheet, and the thickness of the two dimension tellurium nanometer sheet is 1-50nm.
Wherein, the thickness of the two-dimentional tellurium nanometer sheet is 3-5nm.
Wherein, the length and width dimensions of the two-dimentional tellurium nanometer sheet are 10-200nm.
Wherein, the length and width dimensions of the two-dimentional tellurium nanometer sheet are 30-40nm.
The two-dimentional tellurium nanometer sheet band gap that first aspect present invention provides is relatively narrow, and response spectrum is wider, and Simultaneous Stabilization is preferable,
With excellent photodetection performance.
Second aspect of the present invention provides a kind of preparation method of two-dimentional tellurium nanometer sheet, includes the following steps：
Tellurium raw material is provided, the tellurium raw material is removed using the method that liquid phase is removed, obtains two-dimentional tellurium nanometer sheet, institute
The thickness for stating two-dimentional tellurium nanometer sheet is 1-50nm.
Wherein, the liquid phase stripping method specifically includes following operation：
The tellurium raw material is added into solvent, Probe Ultrasonic Searching 8-15h is used under ice bath environment；The Probe Ultrasonic Searching knot
Shu Hou continues to use water bath sonicator, the water bath sonicator time to be 3-10h, and the temperature of the water-bath is kept for 5-15 DEG C；Ultrasound
Afterwards, centrifuged and be dried to obtain two-dimentional tellurium nanometer sheet.
Wherein, the power of the Probe Ultrasonic Searching is 200-250W；The water bath sonicator power is 300-380W.
Wherein, the operation of the centrifugation includes：Using the centrifugal force of 0.5-6kg, 20-35min is centrifuged, takes supernatant, so
The supernatant is continued afterwards to centrifuge 25-35min using 10-15kg, is precipitated；Up to the two dimension after gained precipitation is dry
Tellurium nanometer sheet.
Wherein, the solvent includes at least one of isopropanol, ethyl alcohol, acetone, water and methyl pyrrolidone.
Prior art generally use liquid phase stripping method is used for removing two-dimensional layer material.And the present invention uses liquid phase to shell for the first time
The non-laminar metallic tellurium pure metals of two dimension are removed from method, and successful.
Second aspect of the present invention provides a kind of preparation method of two-dimentional tellurium nanometer sheet, the method for using liquid phase stripping for the first time
Two-dimentional tellurium nanometer sheet is made by non-laminar tellurium raw material, peeling effect is good, and may be implemented to prepare two-dimentional tellurium nanometer on a large scale
Piece, cost is relatively low, and preparation method is simple to operation.
Third aspect present invention provides a kind of application of two-dimentional tellurium nanometer sheet as described above in optical detector.
Since the two-dimentional tellurium nanometer sheet of the present invention has good photodetection performance, light can be performed well in
Detector.
To sum up, advantageous effect of the present invention includes the following aspects：
1, two-dimentional tellurium nanometer sheet provided by the invention has excellent photodetection performance；
2, the preparation method of two-dimentional tellurium nanometer sheet provided by the invention, uses the method for liquid phase stripping by non-laminar for the first time
Two-dimentional tellurium nanometer sheet is made in tellurium raw material, and peeling effect is good, and may be implemented to prepare two-dimentional tellurium nanometer sheet on a large scale, cost compared with
Low, preparation method is simple to operation；
3, application of the two-dimentional tellurium nanometer sheet provided by the invention in optical detector.
Description of the drawings
Fig. 1 is the transmission electron microscope picture of two-dimentional tellurium nanometer sheet made from embodiment 1；
Fig. 2 is the atomic force microscope picture of two-dimentional tellurium nanometer sheet made from embodiment 1；
Fig. 3 is the abosrption spectrogram of the liquid phase stripping process of two-dimentional tellurium nanometer sheet in embodiment 1；
Fig. 4 is the abosrption spectrogram and band gap diagram of various sizes of two-dimentional tellurium nanometer sheet aqueous dispersions.
Specific implementation mode
As described below is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
" the two-dimentional tellurium nanometer sheet " or " tellurium " that the present invention mentions removes specified otherwise, refers to simple substance tellurium.
Embodiment of the present invention first aspect provides a kind of two-dimentional tellurium nanometer sheet, and the thickness of the two dimension tellurium nanometer sheet is
1-50nm。
In embodiment of the present invention, the thickness of the two dimension tellurium nanometer sheet is 1-5nm.Optionally, the two-dimentional tellurium nanometer
The thickness of piece is 5-10nm.Optionally, the thickness of the two-dimentional tellurium nanometer sheet is 10-50nm.Still optionally further, the two dimension
The thickness of tellurium nanometer sheet is 1nm, 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm or 50nm.
In embodiment of the present invention, the length and width dimensions of the two dimension tellurium nanometer sheet are 10-200nm.Optionally, the two dimension
The length and width dimensions of tellurium nanometer sheet are 10-50nm.Optionally, the length and width dimensions of the two-dimentional tellurium nanometer sheet are 50-100nm.It is optional
The length and width dimensions on ground, the two dimension tellurium nanometer sheet are 100-200nm.Still optionally further, the length and width of the two-dimentional tellurium nanometer sheet
Size is 30-40nm.Still optionally further, the length and width dimensions of the two-dimentional tellurium nanometer sheet are 10-30nm.Still optionally further,
The length and width dimensions of the two dimension tellurium nanometer sheet are 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm,
100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 180nm, 190nm or 200nm.
In embodiment of the present invention, the photoresponse wave-length coverage of the two dimension tellurium nanometer sheet is 500nm or less.
The two-dimentional tellurium nanometer sheet that first aspect present invention provides, first, two-dimentional tellurium nanometer sheet have relatively narrow band gap, therefore
The range from ultraviolet light to visible light can be responded；Secondly there is preferable time stability and light to visit cyclical stability.Two dimension
Tellurium nanometer sheet may be implemented preferable light in 2 weeks and visit stability.In the light of 10h visits loop test, the light number of making inquiries about only occurs
Slight decaying.Therefore, the two-dimentional tellurium nanometer sheet band gap that embodiment of the present invention provides is relatively narrow, and response spectrum is wider, while steady
It is qualitative preferable, there is excellent photodetection performance.
Second aspect of the embodiment of the present invention provides a kind of preparation method of two-dimentional tellurium nanometer sheet, includes the following steps：
Tellurium raw material is provided, the tellurium raw material is removed using the method that liquid phase is removed, obtains two-dimentional tellurium nanometer sheet, institute
The thickness for stating two-dimentional tellurium nanometer sheet is 1-50nm.
In embodiment of the present invention, the tellurium raw material is the non-laminar metallic tellurium simple substance of two dimension, can be such as tellurium powder, also may be used
Think tellurium block, its size and shape is not particularly limited as that can be micron order or millimetre-sized block.The tellurium raw material can
By being commercially available.The band gap of the tellurium raw material is relatively narrow for 0.3eV or so, the band gap of the two-dimentional tellurium nanometer sheet obtained after stripped
Also relatively narrow, it can be used for detecting longer wavelengths of light.
In embodiment of the present invention, the liquid phase stripping method specifically includes following operation：
The tellurium raw material is added into solvent, Probe Ultrasonic Searching 8-15h is used under ice bath environment；The Probe Ultrasonic Searching knot
Shu Hou continues to use water bath sonicator, the water bath sonicator time to be 3-10h, and the temperature of the water-bath is kept for 5-15 DEG C；Ultrasound
Afterwards, centrifuged and be dried to obtain two-dimentional tellurium nanometer sheet.
Optionally, the solvent includes at least one of isopropanol, ethyl alcohol, acetone, water and methyl pyrrolidone.
Optionally, a concentration of 1-7mg/mL of the tellurium raw material in the solvent.
Optionally, the power of the Probe Ultrasonic Searching is 200-250W.Still optionally further, the power of the Probe Ultrasonic Searching is
240W。
Optionally, the time of the Probe Ultrasonic Searching is 10h.
Optionally, the Probe Ultrasonic Searching is non-continuous ultrasound, and it is 2/4s to select the ultrasonic ON/OFF time, i.e., first ultrasound 2s, so
Ultrasonic probe is closed afterwards and keeps 4s, is further continued for ultrasonic 2s, and so on.
Optionally, the water bath sonicator power is 300-380W.Still optionally further, the water bath sonicator power is
360W。
Optionally, the time of the water bath sonicator is 8h.
Optionally, the bath temperature is kept for 10 DEG C.
Optionally, it after ultrasound, is centrifuged, the operation of the centrifugation includes：The centrifugal force for using 0.5-6kg first, from
Heart 20-35min, takes supernatant；Then the supernatant is continued to centrifuge 25-35min using the centrifugal force of 10-15kg, is obtained
Precipitation is two-dimentional tellurium nanometer sheet.Still optionally further, the centrifugal force of 2kg is used first, is centrifuged 30min, is taken supernatant；Then
The supernatant is continued using the centrifugal force of 12kg to centrifuge 30min, is precipitated, by gained precipitation it is dry after up to two-dimentional tellurium
Nanometer sheet.Optionally, the mode of the drying is unlimited, may be, for example, vacuum drying.
Prior art generally use liquid phase stripping method is used for removing two-dimensional layer material.And the present invention uses liquid phase to shell for the first time
The non-laminar simple substance tellurium material of two dimension is removed from method, and successful.
Second aspect of the present invention provides a kind of preparation method of two-dimentional tellurium nanometer sheet, the method for using liquid phase stripping for the first time
Two-dimentional tellurium nanometer sheet is made by non-laminar tellurium raw material, peeling effect is good, and may be implemented to prepare two-dimentional tellurium nanometer on a large scale
Piece, cost is relatively low, and preparation method is simple to operation.
Third aspect present invention provides a kind of application of two-dimentional tellurium nanometer sheet as described above in optical detector.
Since the two-dimentional tellurium nanometer sheet of the present invention has good photodetection performance, photoelectricity can be work perfectly well as
Detector.
Embodiment 1：
A kind of preparation method of two dimension tellurium nanometer sheet, includes the following steps：
(1) the tellurium powder of 500mg is added in the isopropanol of 100ml.Then selection Probe Ultrasonic Searching 240W, ultrasonic 10h.Selection
The ultrasonic ON/OFF time is 2/4s, and is that ultrasound is carried out under ice bath environment.After Probe Ultrasonic Searching is complete, water bath sonicator is then used.
Water bath sonicator power is 360W.Ultrasonic time is 8h.Bath temperature is kept for 10 DEG C；
(2) the two-dimentional tellurium nanometer sheet that ultrasound is needed using the method for centrifugation later.The centrifugation of 2000g is used first
Power centrifuges 30min.Supernatant is taken, then continues to centrifuge 30min using 12000g by the supernatant, be precipitated, vacuum is dry
Up to two-dimentional tellurium nanometer sheet after dry.
As shown in Figure 1, for the Electronic Speculum shape appearance figure of two-dimensional metallic simple substance tellurium nanometer sheet.Its size is less than 100nm.Fig. 2 is shown
Be atomic force microscope picture.As seen from the figure, the thickness of two-dimentional tellurium nanometer sheet is in 4nm or so.Therefore pass through transmission electron microscope
With the observation of atomic force microscope, two-dimentional simple substance tellurium nanometer sheet can be separated really by liquid phase stripping method.
As shown in figure 3, respectively in isopropanol (IPA), the same concentrations removed in water, in methyl pyrrolidone and acetone
Two-dimentional tellurium nanometer sheet absorption spectrum.It is obvious that the absorption spectrum for the two-dimentional tellurium nanometer sheet removed in isopropanol has higher
Absorption value and bigger slope.This illustrate in isopropanol can fully by bigger tellurium particle stripping at size it is smaller two
Tie up tellurium nanometer sheet.
Fig. 4 a are the absorption spectrum of different size two-dimensional tellurium nanometer sheets when centrifuging first time under difference centrifugal force (rotating speed)
Figure.Fig. 4 b are the different band gap diagrams of the tellurium nanometer sheet under different rotating speeds.The two of corresponding rotating speed 0.5-1kg, 1-3kg and 3-6kg
The size for tieing up tellurium nanometer sheet is respectively 200nm or so, 100nm or so and 50nm or so.Absorption spectrum uses ultraviolet-spectrophotometric
Meter measures.Various sizes of tellurium nanometer sheet dispersion liquid is fitted into quartz colorimetric utensil, is put into ultraviolet specrophotometer card slot and surveys
Measure trap.According to the trap of the tellurium nanometer sheet under different sizes, and then its different band gap is calculated, such as Fig. 4 b institutes
Show.As seen from the figure, the band gap of the tellurium nanometer sheet of corresponding rotating speed 0.5-1kg, 1-3kg and 3-6kg is respectively 1.63eV, 1.72eV and
1.90eV.The band gap of the two-dimentional tellurium nanometer sheet of large-size is smaller, can obtain the response of more long wavelength.The two dimension of reduced size
Tellurium nanometer sheet can obtain higher photodetection signal due to its surface area with bigger.
Embodiment 2：
A kind of preparation method of two dimension tellurium nanometer sheet, includes the following steps：
(1) the tellurium powder of 500mg is added in the isopropanol of 100ml.Then selection Probe Ultrasonic Searching 200W, ultrasonic 15h.Selection
The ultrasonic ON/OFF time is 2/4s, and is that ultrasound is carried out under ice bath environment.After Probe Ultrasonic Searching is complete, water bath sonicator is then used.
Water bath sonicator power is 300W.Ultrasonic time is 10h.Bath temperature is kept for 15 DEG C；
(2) the two-dimentional tellurium nanometer sheet that ultrasound is needed using the method for centrifugation later.The centrifugation of 1800g is used first
Power centrifuges 35min.Supernatant is taken, then continues to centrifuge 25min using 15000g by supernatant, be precipitated, after vacuum drying
Up to two-dimentional tellurium nanometer sheet.
Embodiment 3：
A kind of preparation method of two dimension tellurium nanometer sheet, includes the following steps：
(1) the tellurium block of 500mg is added in the isopropanol of 100ml.Then selection Probe Ultrasonic Searching 250W, ultrasonic 8h.Choosing
It is 2/4s to select the ultrasonic ON/OFF time, and is that ultrasound is carried out under ice bath environment.It is then super using water-bath after Probe Ultrasonic Searching is complete
Sound.Water bath sonicator power is 380W.Ultrasonic time is 3h.Bath temperature is kept for 5 DEG C；
(2) the two-dimentional tellurium nanometer sheet that ultrasound is needed using the method for centrifugation later.The centrifugation of 2200g is used first
Power centrifuges 20min.Supernatant is taken, then continues to centrifuge 35min using 10000g by supernatant, be precipitated, after vacuum drying
Up to two-dimentional tellurium nanometer sheet.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
Cannot the limitation to the scope of the claims of the present invention therefore be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of two dimension tellurium nanometer sheet, which is characterized in that the thickness of the two dimension tellurium nanometer sheet is 1-50nm.
2. two dimension tellurium nanometer sheet as described in claim 1, which is characterized in that the thickness of the two dimension tellurium nanometer sheet is 3-5nm.
3. two dimension tellurium nanometer sheet as described in claim 1, which is characterized in that the length and width dimensions of the two dimension tellurium nanometer sheet are
10-200nm。
4. two dimension tellurium nanometer sheet as claimed in claim 3, which is characterized in that the length and width dimensions of the two dimension tellurium nanometer sheet are
30-40nm。
5. a kind of preparation method of two dimension tellurium nanometer sheet, which is characterized in that include the following steps：
Tellurium raw material is provided, the tellurium raw material is removed using the method that liquid phase is removed, obtains two-dimentional tellurium nanometer sheet, described two
The thickness for tieing up tellurium nanometer sheet is 1-50nm.
6. the preparation method of two dimension tellurium nanometer sheet as claimed in claim 5, which is characterized in that the method tool of the liquid phase stripping
Body includes following operation：
The tellurium raw material is added into solvent, Probe Ultrasonic Searching 8-15h is used under ice bath environment；The Probe Ultrasonic Searching terminates
Afterwards, continue to use water bath sonicator, the water bath sonicator time to be 3-10h, the temperature of the water-bath is kept for 5-15 DEG C；After ultrasound,
Centrifuged and be dried to obtain two-dimentional tellurium nanometer sheet.
7. the preparation method of two dimension tellurium nanometer sheet as claimed in claim 6, which is characterized in that the power of the Probe Ultrasonic Searching is
200-250W；The water bath sonicator power is 300-380W.
8. the preparation method of two dimension tellurium nanometer sheet as claimed in claim 6, which is characterized in that the operation of the centrifugation includes：
Using the centrifugal force of 0.5-6kg, 20-35min is centrifuged, supernatant is taken, then continues to centrifuge using 10-15kg by the supernatant
25-35min is precipitated；Up to the two-dimentional tellurium nanometer sheet after gained precipitation is dry.
9. the preparation method of two dimension tellurium nanometer sheet as claimed in claim 6, which is characterized in that the solvent include isopropanol,
At least one of ethyl alcohol, acetone, water and methyl pyrrolidone.
10. a kind of application of the two-dimentional tellurium nanometer sheet in optical detector as described in any one of claim 1-4.
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