CN112340710A - Preparation method of high-quality tellurium quantum dots - Google Patents
Preparation method of high-quality tellurium quantum dots Download PDFInfo
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- CN112340710A CN112340710A CN202011307198.XA CN202011307198A CN112340710A CN 112340710 A CN112340710 A CN 112340710A CN 202011307198 A CN202011307198 A CN 202011307198A CN 112340710 A CN112340710 A CN 112340710A
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- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/02—Elemental selenium or tellurium
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
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Abstract
The invention relates to a preparation method of high-quality tellurium quantum dots, belongs to the technical field of nano materials, and solves the technical problem that the size of a tellurium simple substance is reduced to the quantum dots, and the preparation method comprises the following steps: firstly, grinding tellurium elementary substance powder in a mortar; secondly, uniformly mixing the ground tellurium powder with a solvent to prepare a mixed solution; thirdly, carrying out ultrasonic stripping on the mixed solution; and finally, carrying out centrifugal classification on the product after ultrasonic stripping to prepare the tellurium quantum dots. The tellurium quantum dots prepared by the method have higher concentration, high quality and uniform appearance, and can be used as electrode materials of new energy devices and photoelectric devices. The method has the advantages of mild reaction conditions, simple preparation process and convenience for macroscopic preparation, and the prepared tellurium quantum dots have uniform size and high purity.
Description
Technical Field
The invention belongs to the technical field of nano materials, and particularly relates to a preparation method of high-quality tellurium quantum dots.
Background
Tellurium is a sixth main group element, and crystalline tellurium has metallic luster and silver white and belongs to a hexagonal system. Tellurium has wide application in the existing industrial production and national economy. The addition of a small amount of tellurium to copper and copper alloys improves machinability and increases hardness. Since the discovery of graphene, two-dimensional nanomaterials have received much attention from material scientists due to their unique structures. And the size of the material is further reduced to quantum dots, and the material shows more unique performance due to quantum size effect. The tellurium quantum dots are prepared by a nanocrystallization method, and have great potential application value in the new energy fields of nano devices, super capacitors, lithium ion batteries, sodium ion batteries and the like. At present, no report on a preparation and synthesis method of tellurium quantum dots exists, and how to prepare high-quality tellurium quantum dots still faces huge challenges.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and solve the technical problem of preparing high-quality tellurium quantum dots, and provides a preparation method of the high-quality tellurium quantum dots, which is used for preparing the high-quality tellurium quantum dots by a liquid-phase ultrasonic stripping method.
The invention is realized by the following technical scheme.
A preparation method of high-quality tellurium quantum dots comprises the following steps: firstly, grinding tellurium elementary substance powder in a mortar; secondly, uniformly mixing the ground tellurium powder with a solvent to prepare a mixed solution, wherein the concentration of tellurium in the mixed solution is 0.5 mg/mL-1 mg/mL; thirdly, carrying out ultrasonic stripping on the mixed solution, wherein the ultrasonic time is 10-30h, and the ultrasonic power is 500-900W; and finally, carrying out centrifugal classification on the product subjected to ultrasonic stripping, wherein the rotating speed of the centrifugal classification is 8000-15000 r/min, and thus obtaining the tellurium quantum dots.
Further, the solvent is one or more of water, an N-methylpyrrolidone solution, 1-ethyl-3-methylimidazole tetrafluoroborate ionic liquid and 1-ethyl-3-methylimidazole trifluoroacetate ionic liquid.
Compared with the prior art, the invention has the beneficial effects that:
the tellurium quantum dots prepared by the method have higher concentration, high quality and uniform appearance, and can be used as electrode materials of new energy devices and photoelectric devices. The method can prepare a large amount of high-quality tellurium quantum dots, has low cost and high yield, and is favorable for promoting the research and the practical application of novel tellurium quantum dots.
Drawings
Fig. 1 is a transmission electron micrograph of the tellurium quantum dots prepared in example 1.
Detailed Description
The invention is described in further detail below with reference to the figures and examples.
Example 1
A preparation method of high-quality tellurium quantum dots comprises the following steps:
1) grinding 100 mg of tellurium elementary substance powder in a mortar;
2) putting the ground tellurium powder into a 250 ml beaker, adding 100 ml of water, and uniformly mixing to obtain a mixed solution;
3) carrying out ultrasonic stripping on the mixed solution, wherein the ultrasonic time is 10h, and the ultrasonic power is 800W;
4) and finally, carrying out centrifugal classification on the product subjected to ultrasonic stripping, wherein the rotating speed of the centrifugal classification is 10000 r/min, and thus obtaining the tellurium quantum dots.
Fig. 1 is a transmission electron micrograph of the tellurium quantum dots prepared in this example, and it can be seen from fig. 1 that the tellurium quantum dots are uniform in size.
Example 2
A preparation method of high-quality tellurium quantum dots comprises the following steps:
1) grinding 50 mg of tellurium elementary substance powder in a mortar;
2) putting the ground tellurium powder into a 250 ml beaker, adding 100 ml of 1-ethyl-3-methylimidazole tetrafluoroborate ionic liquid, and uniformly mixing to prepare a mixed solution;
3) carrying out ultrasonic stripping on the mixed solution, wherein the ultrasonic time is 20h, and the ultrasonic power is 500W;
4) and finally, carrying out centrifugal classification on the product subjected to ultrasonic stripping, wherein the rotating speed of the centrifugal classification is 11000 r/min, and thus obtaining the tellurium quantum dots.
Example 3
A preparation method of high-quality tellurium quantum dots comprises the following steps:
1) grinding 70 mg of tellurium elementary substance powder in a mortar;
2) putting the ground tellurium powder into a 250 ml beaker, adding 100 ml of N-methyl pyrrolidone solution, and uniformly mixing to obtain a mixed solution;
3) carrying out ultrasonic stripping on the mixed solution, wherein the ultrasonic time is 15h, and the ultrasonic power is 900W;
4) and finally, carrying out centrifugal classification on the product subjected to ultrasonic stripping, wherein the rotating speed of the centrifugal classification is 15000 r/min, and thus obtaining the tellurium quantum dots.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (2)
1. A preparation method of high-quality tellurium quantum dots is characterized by comprising the following steps: firstly, grinding tellurium elementary substance powder in a mortar; secondly, uniformly mixing the ground tellurium powder with a solvent to prepare a mixed solution, wherein the concentration of tellurium in the mixed solution is 0.5 mg/mL-1 mg/mL; thirdly, carrying out ultrasonic stripping on the mixed solution, wherein the ultrasonic time is 10-30h, and the ultrasonic power is 500-900W; and finally, carrying out centrifugal classification on the product subjected to ultrasonic stripping, wherein the rotating speed of the centrifugal classification is 8000-15000 r/min, and thus obtaining the tellurium quantum dots.
2. The method for preparing high-quality tellurium quantum dots according to claim 1, characterized in that: the solvent is one or more of water, N-methylpyrrolidone solution, 1-ethyl-3-methylimidazole tetrafluoroborate ionic liquid and 1-ethyl-3-methylimidazole trifluoroacetate ionic liquid.
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| CN202011307198.XA CN112340710A (en) | 2020-11-19 | 2020-11-19 | Preparation method of high-quality tellurium quantum dots |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113755174A (en) * | 2021-09-26 | 2021-12-07 | 杭州师范大学 | Lead telluride quantum dot and preparation method and application thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105692569A (en) * | 2016-01-29 | 2016-06-22 | 云南师范大学 | Method for preparing tellurium quantum dots |
| CN107384390A (en) * | 2017-07-29 | 2017-11-24 | 深圳孔雀科技开发有限公司 | A kind of preparation method of molybdenum disulfide quantum dot |
| CN108313987A (en) * | 2018-02-09 | 2018-07-24 | 深圳大学 | Two-dimentional tellurium nanometer sheet and its preparation method and application |
| US20190093239A1 (en) * | 2016-03-24 | 2019-03-28 | Monash University | Shear assisted electrochemical exfoliation of two dimensional materials |
| CN110407183A (en) * | 2019-07-31 | 2019-11-05 | 兰州大学 | A kind of tellurium nanometer rods, energy storage device and preparation method thereof, the method for preparing tellurium nano material |
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2020
- 2020-11-19 CN CN202011307198.XA patent/CN112340710A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105692569A (en) * | 2016-01-29 | 2016-06-22 | 云南师范大学 | Method for preparing tellurium quantum dots |
| US20190093239A1 (en) * | 2016-03-24 | 2019-03-28 | Monash University | Shear assisted electrochemical exfoliation of two dimensional materials |
| CN107384390A (en) * | 2017-07-29 | 2017-11-24 | 深圳孔雀科技开发有限公司 | A kind of preparation method of molybdenum disulfide quantum dot |
| CN108313987A (en) * | 2018-02-09 | 2018-07-24 | 深圳大学 | Two-dimentional tellurium nanometer sheet and its preparation method and application |
| CN110407183A (en) * | 2019-07-31 | 2019-11-05 | 兰州大学 | A kind of tellurium nanometer rods, energy storage device and preparation method thereof, the method for preparing tellurium nano material |
Non-Patent Citations (1)
| Title |
|---|
| CHAOYU LU,ET AL.: "Tellurium quantum dots: Preparation and optical properties", 《APPLIED PHYSICS LETTERS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113755174A (en) * | 2021-09-26 | 2021-12-07 | 杭州师范大学 | Lead telluride quantum dot and preparation method and application thereof |
| CN113755174B (en) * | 2021-09-26 | 2023-10-20 | 杭州师范大学 | Lead telluride quantum dot and preparation method and application thereof |
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