CN108291833B - 基于雷达的填充水平传感器 - Google Patents

基于雷达的填充水平传感器 Download PDF

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CN108291833B
CN108291833B CN201680065972.6A CN201680065972A CN108291833B CN 108291833 B CN108291833 B CN 108291833B CN 201680065972 A CN201680065972 A CN 201680065972A CN 108291833 B CN108291833 B CN 108291833B
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resonator structure
level sensor
fill level
semiconductor
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温弗里德·迈尔
马丁·希茨勒
克里斯蒂安·瓦尔德施密特
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Endress and Hauser SE and Co KG
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Abstract

本发明涉及一种具有至少一个半导体元件(2)的、基于雷达的填充水平传感器，所述至少一个半导体元件(2)包括至少一个半导体芯片(3)和其内部布置所述至少一个半导体芯片(3)的芯片外壳(4)；所述至少一个半导体芯片(3)包括至少一个耦合元件(5)，所述至少一个耦合元件(5)优选地在所述毫米波长范围内用作针对电磁波的信号门；所述填充水平传感器其特征在于，至少一个第一谐振器结构(6)被布置在所述芯片外壳(4)的所述表面的子区中。

Description

基于雷达的填充水平传感器
技术领域
本发明涉及一种具有至少一个半导体元件的基于雷达的填充水平传感器。
背景技术
能够利用毫米波高度精确地测量从几厘米(cm)直到500米(m)的填充水平。随着利用的频带越来越高，随着天线尺寸总是越来越小，能够实现高射束聚焦。在更高操作频率(79GHz，150GHz…)的情况下，因为技术和管理的原因，以及更大的绝对带宽是可能的，所以填充水平分辨率能够被附加地显著地提高。作为两个优势的结果，在包含复杂内部配件的容器中的基于雷达的、填充水平传感器的可靠性能被显著地增加。
为了实现以高于60GHz频率的电路，用于电子技术、特别是SMD技术的构建和连接技术不再适用。由于诸如接合线或焊接位置的连接结构的尺寸位于毫米波的波长的量级，所以它们作为电路的寄生元件进行干扰。此外，通常在电子设备中的很多材料会引入随频率增长的损耗，由此导致毫米波信号仅在短的距离之后就显著地衰减。因此，利用增长频率实现具有标准技术的强且可靠的毫米波电路是越来越困难并且甚至是不可能的。这显著影响了填充水平测量的分辨率和精度。
发明内容
本发明的目标是为了提供一种具有高填充水平分辨率的、基于雷达的填充水平传感器，以及为了提供一种用于制造这种填充水平传感器的相对应的方法。
所述目标通过本发明的主题实现。本发明的主题在于一种基于雷达的填充水平传感器，所述传感器包含至少一个半导体元件，所述至少一个半导体元件包括至少一个半导体芯片和其中布置所述至少一个半导体芯片的芯片封装件，其中，所述至少一个半导体芯片具有至少一个耦合元件，所述至少一个耦合元件优选地在毫米波区域中用作针对电磁波的信号门，其中至少一个第一谐振器结构被布置在所述芯片封装件的表面部分上。
当前，被实施为QFN封装件(QFN：四方扁平无引线封装件)的芯片封装件被认为是用于实践本发明的方法的SMD技术的已建立的标准封装件中最受欢迎的封装件。然而，这不应当排除还有芯片封装件的其它的或将来的标准封装形式(例如，DIL、SBT、SSBT、BGA)能够在给定的情形下被有利地应用于实践本发明的其它实例。
在一个优选的进一步的发展中，至少一个第二谐振器结构被布置在所述至少一个半导体芯片和所述至少一个第一谐振器结构之间。
在一个优选的变体中，所述芯片封装件包括在表面部分上的、在所述至少一个半导体芯片方向上延伸的凹陷，在所述表面部分上布置所述至少一个第一谐振器结构。
在一个可替选的变体中，所述芯片封装件包括在表面部分上的、在所述至少一个第二谐振器结构方向上延伸的凹陷，在所述表面部分上布置所述至少一个第一谐振器结构。
在一个实施利的优选形式中，所述半导体元件被布置在印刷电路板上，其中介电透镜以使得所述半导体元件位于所述透镜的焦点中的方式被固定在所述印刷电路板上。
在一个优选的实施例中，所述半导体元件被布置在印刷电路板上，其中至少一个中空导体被布置在所述印刷电路板上，用于传递由所述半导体元件产生的所述电磁波。在这样的情形下，所述耦合元件用作于将所述半导体芯片耦合到中空导体。在这样的情形下，能够使用介电波导而替代辐射的第二谐振器作为到所述中空导体的连接。
在一个优选的实施例中，介电波导被布置在所述凹陷中，使得从所述耦合元件外耦合出的所述电磁波利用所述介电波导被引导到中空导体中，所述中空导体优选地具有用于内耦合所述电磁波的终端结构。
本发明的另一个目标同样地通过一种方法来实现。所述方法是一种用于制造如本发明的基于雷达的填充水平传感器的方法，所述方法包括如下步骤：发射辐射穿过所述半导体元件，用于确定所述半导体芯片相对于所述芯片封装件的位置；部分地去除芯片封装件，直到所述芯片封装件的表面部分具有在所述至少一个耦合元件方向上延伸的至少一个凹陷；在所述至少一个凹陷中产生第一谐振器结构，使得在所述至少一个第一谐振器结构和所述半导体芯片的所述至少一个耦合元件之间的间隔减小。
在一个优选的进一步的发展中，在所述至少一个凹陷中产生第一谐振器结构利用2D或3D打印方法或MID方法(模塑互联器件)执行。
在一个优选的变体中，发射辐射穿过所述半导体元件利用x光执行。
在一个实施利的优选形式中，部分地去除芯片封装件利用铣削或激光束加工执行。
在一个优选的实施例中，所述第一谐振器结构包括矩形金属片(platelet)，其中所述第一谐振器结构的边缘长度与所述电磁波的半波长或整数倍半波长相对应。
在一个优选的实施例中，所述第一谐振器结构被实施为优选是石英玻璃、陶瓷、塑料的介电谐振器结构，或被实施为结构化的基板片。
附图说明
现在将会基于附图更详细地解释本发明，附图如下所示：
图1示出具有包括第一谐振器结构的半导体元件的基于雷达的填充水平传感器的横截面，
图2示出具有包括第一谐振器结构和第二谐振器结构的半导体元件2的基于雷达的、填充水平传感器的横截面，
图3示出半导体芯片的主视图，
图4a)示出半导体芯片和暴露焊盘的侧视图，b)示出在暴露焊盘上的半导体芯片的侧视图，以及c)示出完成的半导体元件的主视图，
图5a)示出半导体元件的x光视图，b)示出具有两个凹陷的完成的半导体元件的主视图，以及c)示出在每个凹陷中具有第一谐振器结构的完成的半导体元件的主视图，
图6示出具有介电透镜的基于雷达的填充水平传感器的侧视图，
图7a)示出在印刷电路板上的半导体元件以及过渡结构的侧视图，b)示出在印刷电路板上的半导体元件和过渡结构的侧视图，以及c)示出过渡结构的侧视图，以及
图8示出具有介电波导的、图1的基于雷达的填充水平传感器的纵切面图。
具体实施方式
图1示出具有一个半导体元件2的基于雷达的填充水平传感器1的横截面。所述半导体元件2包括半导体芯片3和其中布置半导体芯片3的芯片封装件4。所述半导体芯片3包括耦合元件5，所述耦合元件5用作针对毫米波区域内的电磁波的信号门(signal gate)。根据本发明，第一谐振器结构6被布置在芯片封装件4的表面部分上。
所述芯片封装件4包括在表面部分上的、朝向耦合元件5深陷的凹陷8，在该表面部分上布置第一谐振器结构6，使得在第一谐振器结构6和耦合元件5之间的间隔9在凹陷8的位置处减小。
半导体芯片3上的耦合元件5被实施为短路的、非常宽的λ/4转换器。进入自由空间的辐射经由谐振器结构6发生，该谐振器结构6被实施为贴片谐振器结构或介电谐振器结构。
此外，芯片封装件4的引脚15利用接合线19与半导体芯片3的接合焊盘连接，用于低频信号和电源。
图2示出具有包括第一谐振器结构6和第二谐振器结构7的半导体元件2的、基于雷达的填充水平传感器1的横截面，其中，所述第二谐振器结构7被布置在耦合元件5和第一谐振器结构6之间。
这是对图1的实施例的任选补充并且这表示了叠层的贴片布置。在这种情形下，在铸造芯片封装件4之前，以小金属基板片形式的第二谐振器结构7被放置在半导体芯片3上方。通过这种方式，用于产生凹陷的加工步骤变得不必要，使得仅需要在封装件上施加第一谐振器结构6。
现在将基于图3-图5详细解释本发明的方法。通过执行半导体加工和将晶片切割成多个独立的芯片，获得了单片集成半导体元件2，其上实现了用于产生和处理毫米波信号的所有电路部分。独立的半导体元件2包括所有的虚拟和数字信号以低频的方式经由其可传输的很多接合焊盘15。
与传统的半导体元件进行比较，半导体元件2差别仅仅在于包含作为以毫米波频率的信号门的两个耦合元件5的形式的耦合结构。半导体元件2首先被安装在通常的芯片封装件里，其中在芯片封装件制造中执行图4a-图4c中图示的所述三个步骤。在第一步骤中(图4a)，半导体元件2被粘附到由暴露焊盘16和引脚17组成的所谓的引脚框架。在第二步中(图4b)，接合焊盘15与引脚17的连接利用接合线19发生。在第三步中(图4c)，接触布置利用塑料密封。以这种方式，形成了芯片封装件4。所有的三个步骤在许多芯片的阵列中执行，并且只有在通过铸造或灌封之后芯片才通过切割或冲压被分离成单独的单元。对这点描述的封装过程的步骤与用于芯片封装件制造的已知现有技术相对应。
在图5a-图5c中示出本发明的步骤。在第一步中，以下述方式获取芯片封装件的x光影像：使得能够从x光影像(图5a)确定半导体元件2在暴露焊盘16上的以及相对于它的边缘的精确位置。在具有位置数据和已知的芯片布局的情况下，然后在第二步中在所有耦合元件5上方的灌封材料中利用例如铣削或激光束加工的材料去除方法产生凹陷8。另外，能够在封装件的铸造材料中利用与耦合元件5的限定间隔形成装配辅助装置或定位器，例如，钻孔18。最后在第三步中，在凹陷8中引入表示集成天线的第一谐振器结构6。在最简单的情形中，这种谐振器结构以矩形金属片形式被实施为谐振器，其的一条边缘长度与毫米波区域中的电磁波的半波长(谐振长度)相对应。然后，还存在介电谐振器，诸如例如能够应用石英玻璃、陶瓷、塑料或结构化基板片。除了引入到凹陷8中的预制谐振器之外，利用2D/3D打印或MID的谐振器结构的沉积还提供了其它的选项。
提供的凹陷8在所述方法中具有如下的主要功能：
a.在第一谐振器结构6和相关联的耦合元件5之间产生预定的距离，以及随后在灌封材料中的可能的厚度波动的校正。
b.谐振器结构的机械定向和固定。
c.利用使灌封材料的层变薄的、耦合元件5和相关联的谐振器结构6之间的高度电耦合，在耦合元件5区域中的灌封材料的层的厚度能够小于接合线19的回路高度。
通过使用从x光影像确定出的尺寸关系的本发明的过程，第一谐振器结构6到耦合元件5的位置的水平公差能够被单独地最小化。在垂直位置公差的情况下，尽管用于半导体安装的引脚框架和粘合层的小厚度公差仍然是非常大的，它们仍能够同样地基于第二、垂直的、x光影像分别地补偿。
根据本发明的方法制造的半导体元件2的电检查能够利用在半导体芯片3中集成自测试执行。在这种情况下，功率测量检测在半导体芯片3上的第一谐振器结构6处的辐射是正在正确地运行，或是在第一谐振器结构6处存在故障。
图6示出在印刷电路板10上布置的半导体元件2，其中介电透镜11以这样的方式固定在印刷电路板10上，使得半导体元件2位于透镜11的焦点。原理上，这是具有集成天线的、用于将辐射发射到介电透镜11的半导体元件2的应用的实施例，在该情况下，集成天线的广泛的辐射被聚焦为高度集中的波束。半导体元件2与另外的电子设备一起被安装在印刷电路板10上，其中如下选择其位置，使得其位于介电透镜11的焦点，介电透镜11利用固定装置22与印刷电路板10固定地连接。固定装置22能够是其中安装印刷电路板10的外壳。
图7a-图7c示出在印刷电路板10上布置的半导体元件2，其中印刷电路板10具有用于传递由半导体元件2产生的电磁波的中空导体12。替代自由辐射，半导体元件2被应用于内耦合到具有圆形或矩形横截面的中空导体12中的辐射。为此必须在封装件上补充地施加特别形成的谐振器和过渡结构23。
为了更好的评估经封装的半导体元件的x光影像，在耦合元件的附近的特殊标记结构能够被安装在芯片布局中，这些标记结构由于金属密度或图案而在x光影像中显现有尤其高的对比度。
图8示出在凹陷8中具有介电波导24的、图1的基于雷达的填充水平传感器的纵切面图。所述介电波导24向中空导体12引导从耦合元件5外耦合出的电磁波(见图7a-图7c)，以及向耦合元件5引导从中空导体12传输的电磁波。
所述中空导体12具有终端结构25，该终端结构25使经由介电波导24到中空导体12中的低损耗过渡成为可能。所述波导24补充地提供了在雷达前端和金属天线结构之间的电流隔离，其是在雷达设备过程测量技术的情况下因为Ex保护而被频繁地指定的特征。
附图标记列表
1填充水平传感器
2半导体元件
3半导体芯片
4芯片封装件
5耦合元件
6第一谐振器结构
7第二谐振器结构
8凹陷
9第一谐振器结构和第二谐振器结构之间的间隔
10印刷电路板
11透镜
12中空导体
15引脚
16暴露焊盘
18钻孔
19接合线
22固定装置
23过渡结构
24介电波导
25终端结构

Claims (17)

1.一种基于雷达的填充水平传感器，所述传感器包括至少一个半导体元件(2)，所述至少一个半导体元件(2)包括至少一个半导体芯片(3)和其中布置所述至少一个半导体芯片(3)的芯片封装件(4)，
其中，所述至少一个半导体芯片(3)具有至少一个耦合元件(5)，所述至少一个耦合元件(5)用作针对电磁波的信号门，
其特征在于：
至少一个第一谐振器结构(6)被布置在芯片封装件(4)的表面部分上，
其中，所述第一谐振器结构(6)被实施为介电谐振器结构或被实施为结构化的基板片。
2.根据权利要求1所述 的填充水平传感器，其中，所述至少一个耦合元件(5)在毫米波区域中用作针对电磁波的信号门。
3.根据权利要求1所述 的填充水平传感器，其中，所述第一谐振器结构(6)被实施为石英玻璃、陶瓷、塑料的介电谐振器结构。
4.根据权利要求1至3中的任一项所述 的填充水平传感器，其中，至少一个第二谐振器结构(7)被布置在所述半导体芯片(3)和所述至少一个第一谐振器结构(6)之间。
5.根据权利要求1至3中的任一项所述 的填充水平传感器，其中，所述芯片封装件(4)包括在所述表面部分上的、在所述至少一个半导体芯片(3)的方向上延伸的凹陷(8)，在所述表面部分上布置所述至少一个第一谐振器结构(6)。
6.根据权利要求4所述 的填充水平传感器，其中，所述芯片封装件(4)包括在所述表面部分上的、在所述至少一个第二谐振器结构(7)的方向上延伸的凹陷(8)，在所述表面部分上布置所述至少一个第一谐振器结构(6)。
7.根据权利要求1-3中的任一项所述 的填充水平传感器，其中，所述半导体元件(2)被布置在印刷电路板(10)上，其中，介电透镜(11)以使得所述半导体元件(2)位于所述介电透镜(11)的焦点中的方式被固定在所述印刷电路板(10)上。
8.根据权利要求1-3中的任一项所述 的填充水平传感器，其中，所述半导体元件(2)被布置在印刷电路板(10)上，其中，至少一个中空导体(12)被布置在所述印刷电路板(10)上，用于传递由所述半导体元件(2)产生的电磁波。
9.根据权利要求5所述 的填充水平传感器，其中，介电波导(24)被布置在所述凹陷(8)中，使得从所述耦合元件(5)外耦合出的电磁波利用所述介电波导(24)引导到中空导体(12)中。
10.根据权利要求6所述 的填充水平传感器，其中，介电波导(24)被布置在所述凹陷(8)中，使得从所述耦合元件(5)外耦合出的电磁波利用所述介电波导(24)引导到中空导体(12)中。
11.根据权利要求9或10所述的填充水平传感器，其中，所述中空导体(12)具有用于内耦合所述电磁波的终端结构(25)。
12.一种用于制造根据权利要求1-11中的任一项所述的基于雷达的填充水平传感器的方法，所述方法包括以下方法步骤：
发射辐射穿过所述半导体元件(2)，用于确定所述半导体芯片(3)相对于所述芯片封装件(4)的位置，
部分地去除所述芯片封装件(4)，直到所述芯片封装件(4)的表面部分具有在所述至少一个耦合元件(5)方向上延伸的至少一个凹陷(8)，
在所述至少一个凹陷(8)中产生第一谐振器结构(6)，使得在所述半导体芯片(3)的所述至少一个耦合元件(5)和所述至少一个第一谐振器结构(6)之间的间隔(9)减小，
其中，所述第一谐振器结构(6)被实施为介电谐振器结构或被实施为结构化的基板片。
13.根据权利要求12所述的方法，其中，所述第一谐振器结构(6)被实施为石英玻璃、陶瓷、塑料的介电谐振器结构。
14.根据权利要求12或13所述的方法，其中，在所述至少一个凹陷中产生所述第一谐振器结构(6)利用2D或3D打印方法或MID方法执行。
15.根据权利要求12或13所述的方法，其中，发射辐射穿过所述半导体元件(2)利用x光执行。
16.根据权利要求12或13所述 的方法，其中，部分地去除所述芯片封装件(4)利用铣削或激光束加工执行。
17.根据权利要求12或13所述 的方法，其中，所述第一谐振器结构(6)包括矩形金属片，以及其中，所述第一谐振器结构(6)的边缘长度与所述电磁波的半波长或整数倍半波长相对应。
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