CN108281452A - 像素单元和形成方法以及成像系统组件 - Google Patents
像素单元和形成方法以及成像系统组件 Download PDFInfo
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- CN108281452A CN108281452A CN201810099785.0A CN201810099785A CN108281452A CN 108281452 A CN108281452 A CN 108281452A CN 201810099785 A CN201810099785 A CN 201810099785A CN 108281452 A CN108281452 A CN 108281452A
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14638—Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/424,124 US9992437B1 (en) | 2017-02-03 | 2017-02-03 | Stacked image sensor pixel cell with in-pixel vertical channel transfer transistor |
US15/424,124 | 2017-02-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108281452A true CN108281452A (zh) | 2018-07-13 |
CN108281452B CN108281452B (zh) | 2022-04-15 |
Family
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Application Number | Title | Priority Date | Filing Date |
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CN201810099785.0A Active CN108281452B (zh) | 2017-02-03 | 2018-01-31 | 像素单元和形成方法以及成像系统组件 |
Country Status (2)
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US (1) | US9992437B1 (zh) |
CN (1) | CN108281452B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110112156A (zh) * | 2019-04-23 | 2019-08-09 | Oppo广东移动通信有限公司 | 一种像素结构、cmos图像传感器和终端 |
CN114078891A (zh) * | 2020-08-17 | 2022-02-22 | 豪威科技股份有限公司 | 具有垂直转移栅极和正方形复位以及源极跟随器布局的图像传感器 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017057444A1 (ja) * | 2015-09-30 | 2017-04-06 | 株式会社ニコン | 撮像素子および撮像装置 |
US10672824B2 (en) | 2016-11-30 | 2020-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor |
CN113064362A (zh) * | 2020-01-02 | 2021-07-02 | 上海鹏武电子科技有限公司 | 一种多通道模拟数据实时采集系统 |
EP4099387A3 (en) * | 2021-06-01 | 2023-04-05 | Samsung Electronics Co., Ltd. | Image sensor including a transistor with a vertical channel and a method of manufacturing the same |
Citations (6)
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CN1812112A (zh) * | 2004-10-20 | 2006-08-02 | 三星电子株式会社 | 具有非平面晶体管的固态图像传感器设备及其制造方法 |
CN101131934A (zh) * | 2006-08-24 | 2008-02-27 | 财团法人工业技术研究院 | 垂直薄膜晶体管的制造方法 |
CN103067674A (zh) * | 2011-10-18 | 2013-04-24 | 奥林巴斯株式会社 | 固体摄像装置以及摄像装置 |
CN105009291A (zh) * | 2013-01-31 | 2015-10-28 | 苹果公司 | 垂直堆叠的图像传感器 |
CN106169488A (zh) * | 2015-05-22 | 2016-11-30 | 台湾积体电路制造股份有限公司 | 用于使用全局快门捕获的背侧照明(bsi)互补金属氧化物半导体(cmos)图像传感器的垂直转移栅极结构 |
US9520427B1 (en) * | 2015-09-16 | 2016-12-13 | SK Hynix Inc. | Image sensor including vertical transfer gate and method for fabricating the same |
Family Cites Families (11)
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US5641694A (en) * | 1994-12-22 | 1997-06-24 | International Business Machines Corporation | Method of fabricating vertical epitaxial SOI transistor |
US7781716B2 (en) | 2008-03-17 | 2010-08-24 | Eastman Kodak Company | Stacked image sensor with shared diffusion regions in respective dropped pixel positions of a pixel array |
US8933544B2 (en) | 2012-07-12 | 2015-01-13 | Omnivision Technologies, Inc. | Integrated circuit stack with integrated electromagnetic interference shielding |
US9478579B2 (en) | 2012-10-16 | 2016-10-25 | Omnivision Technologies, Inc. | Stacked chip image sensor with light-sensitive circuit elements on the bottom chip |
US9356061B2 (en) * | 2013-08-05 | 2016-05-31 | Apple Inc. | Image sensor with buried light shield and vertical gate |
KR20150046898A (ko) * | 2013-10-23 | 2015-05-04 | 삼성전자주식회사 | 이미지 소자의 제조 방법 |
US9344658B2 (en) | 2014-07-31 | 2016-05-17 | Omnivision Technologies, Inc. | Negative biased substrate for pixels in stacked image sensors |
KR102462912B1 (ko) * | 2015-12-04 | 2022-11-04 | 에스케이하이닉스 주식회사 | 수직 전송 게이트를 갖는 이미지 센서 |
KR102476776B1 (ko) * | 2016-03-25 | 2022-12-13 | 에스케이하이닉스 주식회사 | 트랜지스터 및 이를 구비하는 이미지 센서 |
KR102465576B1 (ko) * | 2016-03-29 | 2022-11-11 | 에스케이하이닉스 주식회사 | 이미지 센서 및 그 제조방법 |
KR102569811B1 (ko) * | 2016-04-08 | 2023-08-24 | 에스케이하이닉스 주식회사 | 이미지 센서 및 그 제조방법 |
-
2017
- 2017-02-03 US US15/424,124 patent/US9992437B1/en active Active
-
2018
- 2018-01-31 CN CN201810099785.0A patent/CN108281452B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1812112A (zh) * | 2004-10-20 | 2006-08-02 | 三星电子株式会社 | 具有非平面晶体管的固态图像传感器设备及其制造方法 |
CN101131934A (zh) * | 2006-08-24 | 2008-02-27 | 财团法人工业技术研究院 | 垂直薄膜晶体管的制造方法 |
CN103067674A (zh) * | 2011-10-18 | 2013-04-24 | 奥林巴斯株式会社 | 固体摄像装置以及摄像装置 |
CN105009291A (zh) * | 2013-01-31 | 2015-10-28 | 苹果公司 | 垂直堆叠的图像传感器 |
CN106169488A (zh) * | 2015-05-22 | 2016-11-30 | 台湾积体电路制造股份有限公司 | 用于使用全局快门捕获的背侧照明(bsi)互补金属氧化物半导体(cmos)图像传感器的垂直转移栅极结构 |
US9520427B1 (en) * | 2015-09-16 | 2016-12-13 | SK Hynix Inc. | Image sensor including vertical transfer gate and method for fabricating the same |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110112156A (zh) * | 2019-04-23 | 2019-08-09 | Oppo广东移动通信有限公司 | 一种像素结构、cmos图像传感器和终端 |
CN110112156B (zh) * | 2019-04-23 | 2021-06-01 | Oppo广东移动通信有限公司 | 一种像素结构、cmos图像传感器和终端 |
CN114078891A (zh) * | 2020-08-17 | 2022-02-22 | 豪威科技股份有限公司 | 具有垂直转移栅极和正方形复位以及源极跟随器布局的图像传感器 |
Also Published As
Publication number | Publication date |
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CN108281452B (zh) | 2022-04-15 |
US9992437B1 (en) | 2018-06-05 |
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Address after: Room 612, 6th floor, No. 111 Building, Xiangke Road, China (Shanghai) Free Trade Pilot Area, Pudong New Area, Shanghai, 201203 Applicant after: STEVE (SHANGHAI) ELECTRONIC TECHNOLOGY CO., LTD Address before: Room 612, 6th floor, No. 111 Building, Xiangke Road, China (Shanghai) Free Trade Pilot Area, Pudong New Area, Shanghai, 201203 Applicant before: Shanghai Ye Core Electronic Technology Co. Ltd. |
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Address after: Room 612, 6th floor, No. 111 Building, Xiangke Road, China (Shanghai) Free Trade Pilot Area, Pudong New Area, Shanghai, 201203 Applicant after: Starway (Shanghai) Electronic Technology Co.,Ltd. Address before: Room 612, 6th floor, No. 111 Building, Xiangke Road, China (Shanghai) Free Trade Pilot Area, Pudong New Area, Shanghai, 201203 Applicant before: Siteway (Shanghai) Electronic Technology Co.,Ltd. |
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