CN108281243B - Device and method for treating surface of micro-stack structure insulating material by discharge plasma - Google Patents
Device and method for treating surface of micro-stack structure insulating material by discharge plasma Download PDFInfo
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Abstract
The invention discloses a device for treating the surface of an insulating material with a micro-stack structure by discharge plasma, which comprises: one end of the high-voltage leading-in electrode is connected with a pulse power supply through a power supply high-voltage output terminal, and the other end of the high-voltage leading-in electrode is connected with the high-voltage electrode through a high-voltage conducting rod; the grounding electrode is arranged right below the high-voltage electrode and is connected with the base through a grounding conducting rod and grounded; the sample to be processed is fixed between the high-voltage electrode and the grounding electrode, and the sample to be processed is tightly attached to the high-voltage electrode and the grounding electrode without a gap. The invention also discloses a method for treating the surface of the insulating material with the micro-stack structure by using the discharge plasma, which comprises the following steps: step 1, assembling a processing device according to the connection of each device; step 2, placing the processed sample to be fixed between the high-voltage electrode and the grounding electrode without a gap; step 3, turning on a pulse power supply to form uniform glow discharge; and 4, carrying out ablation treatment on the surface of the sample to be treated by low-temperature plasma generated by glow discharge.
Description
Technical Field
The invention relates to the technical field of insulators, in particular to a device and a method for treating the surface of an insulating material with a micro-stack structure by discharge plasma.
Background
The micro-stack structure insulating material, namely the metal and insulating laminated composite insulating structure with the thickness of micron to millimeter, shows excellent surface insulating strength at direct current, alternating current and pulse high voltage, greatly improves the insulating efficiency and quality, and provides a way for realizing key functions, miniaturization and high efficiency of large-scale pulse power equipment and power equipment.
The surface processing and treatment process of the micro-stack insulating material is a key technology for ensuring the performance of the micro-stack insulating material. The micro-stack layer insulation preparation process is complex, and the methods of machining, fine polishing and ultrasonic cleaning are adopted for shape processing and surface treatment. From the current use effect, the micro-stack insulating material processed by the process has the flashover characteristic consistency which is difficult to guarantee, which is mainly caused by the surface treatment process of the insulator. Therefore, the surface treatment process of the micro-stack insulation layer to achieve excellent surface flashover strength is a key technology and is a problem which needs to be solved when the micro-stack insulation layer is widely applied. The shape of the micro-stack insulator needs to be obtained through mechanical processing, although the current processing precision is high, the surface of the micro-stack insulator seems to be quite smooth, and due to the great difference of the mechanical properties of metal and insulating materials, micro-bulges and burrs exist on the surface of the metal layer from the microscopic view, which is inevitable. The strong field effect of the metal protrusion will obviously act on the uneven part on the interface of the metal protrusion and the metal layer, so that the electron emission, the electron charge movement and the mutual collision characteristics of the metal layer are changed violently, and the local electric field concentration is caused, thereby causing faster insulation damage.
The plasma surface treatment technology is a new high-tech environment-friendly technology appearing in the scientific field of material surface treatment. The low-temperature plasma surface treatment technology can be used for effectively removing metal protrusions and pollutants on the surface of the insulating material, grinding the metal layer, performing surface treatment on the micro-stack insulation layer by using the plasma technology, eliminating the metal protrusions, burrs and insulation protrusions on the surface of the micro-stack insulation material, ensuring the uniformity and consistency of the surface, reducing the dispersion of the insulating property of the material, and integrally improving the edge insulation strength of the material.
Disclosure of Invention
In order to solve the above problems, an object of the present invention is to provide a device and a method for treating the surface of an insulating material with a micro-stack structure by discharge plasma, which can eliminate the metal, the insulation protrusion and the burr on the surface of the insulating material with the micro-stack structure, ensure the uniformity of the surface, reduce the dispersion of the insulating property of the material, and improve the insulating strength of the material along the surface as a whole.
The invention provides a device for treating the surface of an insulating material with a micro-stack structure by discharge plasma, which comprises:
one end of the high-voltage leading-in pole is connected with a pulse power supply through a power supply high-voltage output terminal, and the other end of the high-voltage leading-in pole is connected with a high-voltage electrode through a high-voltage conducting rod;
the grounding electrode is arranged right below the high-voltage electrode and is connected with the base through a grounding conducting rod and grounded;
and a sample to be processed which is fixed between the high voltage electrode and the grounding electrode, and which is in close contact with the high voltage electrode and the grounding electrode without a gap.
As a further improvement of the invention, an input insulator is sleeved outside the high-voltage leading-in pole.
As a further improvement of the invention, the high-voltage conducting rod, the high-voltage electrode, the sample to be processed, the grounding electrode and the grounding conducting rod are all positioned in a closed space formed by a discharge processing chamber shell and the base.
As a further improvement of the invention, an air inlet interface and an air outlet interface are respectively arranged on two sides of the shell of the discharge processing chamber, the air inlet interface is connected with an air bottle, and the air outlet interface is connected with a vacuum pump.
As a further improvement of the invention, the output of the pulse power supply is high-voltage pulse with nanosecond repetition frequency, the pulse width is 20 ns-200 ns, the pulse discharge frequency is 200 Hz-10 k Hz, the voltage amplitude is 5 kV-50 kV, and the power is 200W-2000W.
As a further improvement of the invention, the vertical distance between the high-voltage electrode and the grounding electrode is 2-30 mm.
As a further improvement of the invention, the sample to be processed is a cylinder, an elliptic cylinder or a flat plate.
As a further improvement of the invention, when the sample to be processed is a cylinder or an elliptic cylinder, the high-voltage electrode and the grounding electrode are in a circular flat plate shape, and the diameters of the high-voltage electrode and the grounding electrode are more than 2 times of the longest direction distance between the high-voltage electrode and the grounding electrode and the contact surface of the high-voltage electrode and the grounding electrode and cannot be less than 20 mm; when the sample to be processed is in a flat plate shape, the high-voltage electrode and the grounding electrode are in a finger shape or a strip shape, the length of the high-voltage electrode and the length of the grounding electrode are more than 5 times of the distance between the high-voltage electrode and the grounding electrode, and the length of the high-voltage electrode and the length of the grounding electrode are the same as the length of the sample to be processed or the length of a region of the sample to be processed.
As a further improvement of the invention, the grounding electrode is a fixed electrode, and the high voltage electrode is an adjustable electrode.
The invention also provides a method for treating the surface of the insulating material with the micro-stack structure by using the plasma discharge, which comprises the following steps:
step 3, turning on a pulse power supply, applying high-voltage pulses to two ends of the sample to be processed through a high-voltage electrode and a grounding electrode, and forming uniform glow discharge on the surface of the sample to be processed;
4, carrying out ablation treatment on metal, insulated bulges or burrs and the like on the surface of the sample to be treated by low-temperature plasma generated by glow discharge in the step 3;
and 5, finishing the treatment of the sample to be treated, and detecting the surface appearance of the sample.
The invention has the beneficial effects that: firstly, the method for treating the surface of the metal and insulation laminated composite material by using the low-temperature discharge plasma can enable the surface of the metal insulation laminated composite material to be smoother, reduce the electric field distortion of the material under an electric field and be beneficial to improving the surface flashover characteristic of the material; secondly, the method provided by the invention can solve the problem that the damage to the metal insulation interface of the metal insulation laminated structure material cannot be eliminated by common machining, grinding and polishing, and can also be applied to surface treatment of pure metal materials and insulation materials to eliminate burrs and bulges on the surface of the materials.
Drawings
FIG. 1 is a flow chart of a method for treating the surface of an insulating material with a micro-stack structure by discharge plasma according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a device for processing the surface of an insulating material with a micro-stack structure by discharge plasma according to an embodiment of the present invention;
FIG. 3 is a side view of a flat plate-type sample to be processed according to an embodiment of the present invention, in connection with a high voltage electrode and a ground electrode;
FIG. 4 is a top view of a flat plate type sample to be processed according to an embodiment of the present invention, in connection with a high voltage electrode and a ground electrode;
fig. 5 is a schematic structural diagram of a device for processing the surface of the insulation material with the micro-stack structure by discharge plasma according to the embodiment of the invention.
In the figure, the position of the upper end of the main shaft,
1. a high voltage lead-in pole; 2, inputting an insulator; 3. an electric discharge processing chamber housing; 4. a high voltage conductive rod; 5. a high voltage electrode; 6. a sample to be processed; 7. a ground electrode; 8. a ground conductive rod; 9. an air inlet interface; 10. an air extraction interface; 11. a base; 12. a pulse power supply; 13. a power supply high voltage output terminal; 14. a vacuum pump; 15. a gas cylinder.
Detailed Description
The present invention will be described in further detail below with reference to specific embodiments and with reference to the attached drawings.
Example 1
As shown in fig. 2, the embodiment 1 of the present invention is an apparatus for treating a flat plate type sample to be treated by discharge plasma treatment of a surface of an insulating material having a micro-stack structure, the apparatus comprising:
one end of the high-voltage leading-in pole 1 is connected with a pulse power supply 12 through a power supply high-voltage output terminal 13, and the other end of the high-voltage leading-in pole 1 is connected with a high-voltage electrode 5 through a high-voltage conducting rod 4;
a ground electrode 7 provided directly below the high voltage electrode 5, the ground electrode 7 being connected to the base 11 through a ground conductive rod 8 and grounded;
and a sample 6 to be processed which is fixed between the high voltage electrode 5 and the ground electrode 7, and the sample 6 to be processed is in close contact with the high voltage electrode 5 and the ground electrode 7 without a gap.
Furthermore, a plurality of input insulators 2 are sleeved outside the high-voltage leading-in pole 1.
Further, the high-voltage conducting rod 4, the high-voltage electrode 5, the sample to be processed 6, the grounding electrode 7 and the grounding conducting rod 8 are all positioned in a closed space formed by the discharge processing chamber shell 3 and the base 11.
Further, an air inlet interface 9 and an air outlet interface 10 are respectively arranged on two sides of the discharge processing chamber shell 3, the air inlet interface 9 is connected with an air bottle 15, and the air outlet interface 10 is connected with a vacuum pump 14.
The device for treating the surface of the insulating material with the micro-stack structure by discharge plasma comprises a set of power supply system, a set of electrode system and a discharge treatment chamber for treating a sample: the power supply system consists of a pulse power supply 12 and a power supply high-voltage output terminal 13; the electrode system consists of a high-voltage leading-in electrode 1, a high-voltage conducting rod 4, a high-voltage electrode 5, a grounding electrode 7 and a grounding conducting rod 8; the discharge processing chamber consists of an input insulator 2, a discharge processing chamber shell 3, an air inlet interface 9, an air outlet interface 10 and a base. The high voltage pole of the pulse power supply 12 is input to the high voltage pole 5 through the high voltage leading-in pole 1 and the high voltage guide rod 4 of the discharge processing chamber, and the low voltage pole of the pulse power supply 12 and the base 11 of the discharge processing chamber are grounded together to form a discharge loop. The base 11 of the discharge processing chamber is connected with the grounding electrode 7 through the grounding guide rod 8. The sample 6 to be processed is a metal insulation layer type composite material, which is fixed between the high-voltage electrode 5 and the grounding electrode 7, the two electrodes are tightly attached to the sample 6 to be processed, no gap exists, and the electric field between the high-voltage electrode 5 and the grounding electrode 7 is uniform.
Further, the pulse power supply 12 outputs high-voltage pulses with nanosecond repetition frequency, the pulse width of the high-voltage pulses is 20 ns-200 ns, the pulse discharge frequency is 200 Hz-10 k Hz, the voltage amplitude is 5 kV-50 kV, and the power is 200W-2000W. The parameters of the pulse power source 12 are selected according to the shape, height, and diameter of the sample 6 to be processed, and the gas pressure and gas type in the discharge processing chamber. The higher the height of the processed sample 6 is, the higher the voltage amplitude of power supply discharge is, and the faster the frequency is; the lower the gas pressure in the discharge processing chamber, the lower the voltage amplitude of the power discharge, and the slower the frequency. The relation among the voltage amplitude, the frequency and the pulse width of the power supply discharge parameter is that the voltage amplitude is increased, and the frequency and the pulse width are reduced; frequency increase, voltage amplitudeThe value and pulse width decrease, the pulse width increases, and the voltage amplitude and frequency decrease. The parameters of the pulse power supply 12 are selected to ensure that the pulse discharge generates a uniform glow discharge on the surface of the sample 6 to be processed and forms a plasma with a certain concentration. In order to ensure that the surface of the sample 6 to be processed generates uniform glow discharge, when the width of the sample 6 to be processed (namely the distance between the high-voltage electrode 5 and the grounding electrode 7) is within 5mm in the air under 1 atmosphere, the design of the pulse field intensity can refer to 25kV/cm, the pulse frequency is 1kHz, and the pulse width is 100 ns; when the width of the sample 6 to be processed (namely the distance between the high-voltage electrode 5 and the grounding electrode 7) is between 5mm and 15mm, the discharge parameters of the pulse power supply can be designed according to the pulse field intensity of 20kV/cm, the pulse frequency of 2kHz and the pulse width of 100 ns; when the width of the sample 6 to be processed (namely the distance between the high-voltage electrode 5 and the grounding electrode 7) is between 15mm and 30mm, the discharge parameters of the pulse power supply can be designed according to the pulse field intensity of 18kV/cm, the pulse frequency of 1kHz and the pulse width of 100 ns. The density of the formed plasma is 1013-1014Per cm3In the meantime. The gas in the discharge processing chamber in this embodiment may be nitrogen, air, or argon or other gas, and the discharge processing chamber may bear an internal pressure and an external pressure of one atmosphere, generally several tens to several thousands of pa. And nanosecond pulse voltage with the highest repetition frequency of 10kHz and 30kV can be endured between the high-voltage input end of the discharge processing chamber and the discharge processing chamber shell 3.
Further, the vertical distance between the high-voltage electrode 5 and the grounding electrode 7 is 2 mm-30 mm.
Further, when the sample 6 to be processed is flat, the high voltage electrode 5 and the ground electrode 7 are finger-shaped or strip-shaped, the length of the high voltage electrode 5 and the length of the ground electrode 7 are 5 times or more of the distance therebetween, and the length of the high voltage electrode 5 and the length of the ground electrode 7 are the same as the length of the sample 6 to be processed or the length of the region of the sample 6 to be processed. The direction of the electric field between the high voltage electrode 5 and the grounding electrode 7 is perpendicular to the length direction of the two electrodes.
Further, the grounding electrode 7 is a fixed electrode, and the high voltage electrode 5 is an adjustable electrode. When the sample 6 to be processed is placed, the sample 6 to be processed is placed on the ground electrode 7, and the distance between the high-voltage electrode 5 and the ground electrode 7 is adjusted by adjusting the position of the high-voltage electrode 5, so that the sample 6 to be processed is finally fixed at the centers of the two electrodes and is tightly attached to the two electrodes.
The present embodiment will be described with reference to a treatment area having a length of 20mm and a width of 10 mm. As shown in FIG. 2, the high voltage leading-in electrode 1 of the discharge processing chamber is fixed at one end of the high voltage conducting rod 4, the other end is connected with the high voltage electrode 5, the low voltage electrode of the power supply and the metal base 11 of the discharge processing chamber are grounded together to form a discharge loop. The discharge processing chamber base 11 is connected to the ground electrode 7 through the ground conductive rod 8.
As shown in fig. 3, the high voltage electrode 5 and the ground electrode 7 are pressed against the sample 6 to be processed, respectively, and the high voltage electrode 5 and the ground electrode 7 are in close contact with the sample 6 to be processed without a gap. The region of the sample 6 to be processed between the high voltage electrode 5 and the ground electrode 7 is a discharge processing region of the sample 6 to be processed. As shown in fig. 4, in order to ensure that the electric field in the discharge treatment region is substantially uniform, both sides of the high voltage electrode 5 and the ground electrode 7 are rounded. The high voltage electrode 5 and the ground electrode 7 have the same length as the sample 6 to be processed and are 20mm in length. The distance between the high voltage electrode 5 and the ground electrode 7 was 10mm, which was the same as the width of the region to be processed of the sample 6 to be processed.
As shown in fig. 2, a pulse power source 12 outputs a high voltage to be applied to both ends of a sample 6 to be processed through a high voltage leading electrode 1, a high voltage conducting rod 4, a high voltage electrode 5, a ground electrode 7, and a ground conducting rod 8. The output voltage amplitude of the pulse power supply 12 is 18kV, the frequency is 5kHz, and the pulse width is 70 ns. Continuous discharge produced density of about 1013Per cm3The more uniform discharge plasma continuously acts on the surface of the processed sample 6 to erode the metal, the insulated bulges and the burrs on the surface of the processed sample 6, so that the surface of the processed sample 6 is smoother, the interface of the metal and the insulation is clearer, and the insulation strength of the edge surface of the processed sample 6 is improved.
Example 2
As shown in fig. 5, the device for treating the surface of the insulation material with the micro-stack structure by the discharge plasma in the embodiment 2 of the present invention treats a cylindrical treated sample:
the present embodiment is different from embodiment 1 in that, when the sample to be processed is a cylindrical or elliptical cylinder, the high voltage electrode and the ground electrode are in a circular flat plate shape, and the diameters of the high voltage electrode and the ground electrode are 2 times or more of the longest direction distance between the high voltage electrode and the ground electrode and the contact surface of the high voltage electrode and the ground electrode and cannot be smaller than 20 mm. In this example, a sample 6 to be processed having a diameter of 15mm and a height of 20mm was described by taking a low-pressure argon gas as an ambient gas.
As shown in FIG. 5, the high voltage leading-in electrode 1 of the discharge processing chamber is fixed at one end of the high voltage conducting rod 4, the other end is connected with the high voltage electrode 5, the low voltage electrode of the power supply and the metal base 11 of the discharge processing chamber are grounded together to form a discharge loop. The discharge processing chamber base 11 is connected to the ground electrode 7 through the ground conductive rod 8. The high voltage electrode 5 is pressed against the sample 6 to be processed placed at the center of the ground electrode 7, and the high voltage electrode 5 and the ground electrode 7 are in close contact with the sample 6 to be processed without a gap. The cylindrical side surface of the sample 6 to be processed is an electric discharge processing region. In order to ensure that the electric field in the discharge treatment zone is substantially uniform, the edges of the high voltage electrode 5 and the ground electrode 7 are rounded. The high voltage electrode 5 and the ground electrode 7 have a diameter of 40mm and a thickness of 15 mm.
As shown in FIG. 5, the vacuum pump 14 evacuates the discharge processing chamber to a vacuum degree of 10-4Pa, the vacuum pump 14 stops pumping air and closes the air outlet interface 10. And introducing argon gas into the discharge treatment chamber by the gas cylinder 15, stopping inputting the argon gas when the vacuum degree in the discharge treatment chamber reaches 10Pa, and closing the gas inlet interface 9.
As shown in fig. 5, a high voltage output from the pulse power source 12 is applied to both ends of the sample 6 to be processed through the high voltage leading electrode 1, the high voltage conducting rod 4, the high voltage electrode 5, the ground electrode 7, and the ground conducting rod 8. The output voltage amplitude of the pulse power supply 12 is 3.5kV, the frequency is 1kHz, and the pulse width is 70 ns. Continuous discharge produced density of about 1013Per cm3The more uniform discharge plasma continuously acts on the surface of the processed sample 6 to erode the metal, the insulated bulges and the burrs on the surface of the processed sample 6, so that the surface of the processed sample 6 is smoother, the interface of the metal and the insulation is clearer, and the insulation strength of the edge surface of the processed sample 6 is improved.
Example 3
As shown in fig. 1, the embodiment 2 of the present invention is a method for treating a surface of an insulating material of a micro-stack structure by discharge plasma, the method comprising the steps of:
step 3, turning on a pulse power supply 12, applying high-voltage pulses to two ends of the sample 6 to be processed through a high-voltage electrode 5 and a grounding electrode 7, and forming uniform glow discharge on the surface of the sample 6 to be processed;
4, carrying out ablation treatment on the insulation bulges or burrs and the like on the surface of the sample 6 to be treated by the low-temperature plasma generated by glow discharge in the step 3;
and 5, finishing the treatment of the sample 6 to be treated, and detecting the surface appearance of the sample.
The pulse power supply 12 applies nanosecond high-voltage pulse with repetition frequency to two ends of the processed sample 6 through the high-voltage electrode 5 and the grounding electrode 7, so that uniform glow discharge is formed on the surface of the processed sample 6, low-temperature plasma with certain concentration generated by the glow discharge can melt and corrode metal, insulating bulges, burrs and the like on the surface of the processed sample 6, the surface of the insulating material with the micro-stack layer structure is smoother, the interface of the metal and the insulation is clearer, and the insulation strength of the edge surface of the processed sample 6 is improved.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. An apparatus for treating the surface of an insulating material with a micro-stack structure by discharge plasma, comprising:
one end of the high-voltage leading-in pole (1) is connected with a pulse power supply (12) through a power supply high-voltage output terminal (13), the other end of the high-voltage leading-in pole (1) is connected with a high-voltage electrode (5) through a high-voltage conducting rod (4), the pulse power supply (12) outputs high-voltage pulses with nanosecond repetition frequency, the pulse width of the high-voltage pulses is 20 ns-200 ns, the pulse discharge frequency is 200 Hz-10 kHz, the voltage amplitude is 5 kV-50 kV, and the power is 200W-2000W;
the grounding electrode (7) is arranged right below the high-voltage electrode (5), and the grounding electrode (7) is connected with the base (11) through a grounding conducting rod (8) and is grounded;
a sample (6) to be processed fixed between the high voltage electrode (5) and the ground electrode (7), wherein the sample (6) to be processed is in close contact with the high voltage electrode (5) and the ground electrode (7) without a gap;
when the sample (6) to be processed is a cylinder or an elliptic cylinder, the high-voltage electrode (5) and the grounding electrode (7) are in a circular flat plate shape, and the diameters of the high-voltage electrode (5) and the grounding electrode (7) are more than 2 times of the longest direction distance on the contact surface of the high-voltage electrode and the grounding electrode and the sample (6) to be processed and cannot be less than 20 mm; when the sample (6) to be processed is in a flat plate shape, the high-voltage electrode (5) and the grounding electrode (7) are in a finger shape or a strip shape, the length of the high-voltage electrode (5) and the length of the grounding electrode (7) are more than 5 times of the distance between the high-voltage electrode and the grounding electrode, and the length of the high-voltage electrode (5) and the length of the grounding electrode (7) are the same as the length of the sample (6) to be processed or the length of an area of the sample (6) to be processed.
2. The apparatus for treating the surface of an insulating material of a micro-stack structure by discharge plasma according to claim 1, wherein an input insulator (2) is externally sleeved on the high voltage leading-in electrode (1).
3. The apparatus for treating the surface of the insulation material with micro-stack structure by discharge plasma according to claim 1, wherein the high voltage conducting rod (4), the high voltage electrode (5), the sample to be treated (6), the grounding electrode (7) and the grounding conducting rod (8) are all in the closed space formed by the discharge treatment chamber shell (3) and the base (11).
4. The apparatus for treating the surface of the insulation material with the micro-stack structure by discharge plasma according to claim 3, wherein the discharge treatment chamber shell (3) is provided with an air inlet interface (9) and an air outlet interface (10) on two sides respectively, the air inlet interface (9) is connected with an air bottle (15), and the air outlet interface (10) is connected with a vacuum pump (14).
5. The apparatus for discharge plasma treatment of the surface of insulation material of micro-stack structure according to claim 1, characterized in that the vertical distance between the high voltage electrode (5) and the ground electrode (7) is 2mm to 30 mm.
6. The apparatus for treating the surface of an insulating material of a micro-stack structure by discharge plasma according to claim 1, wherein the sample (6) to be treated is a cylindrical, elliptical or flat plate.
7. The apparatus for discharge plasma treatment of the surface of insulation material of micro-stack structure according to claim 1, characterized in that the ground electrode (7) is a fixed electrode and the high voltage electrode (5) is an adjustable electrode.
8. A method for treating a surface of a micro-stack structured insulating material using the apparatus for treating a surface of a micro-stack structured insulating material by discharge plasma according to any one of claims 1 to 7, comprising the steps of:
step 1, assembling a device for treating the surface of an insulating material with a micro-stack structure by using discharge plasma;
step 2, placing the sample (6) to be processed on the grounding electrode (7), and adjusting the position of the high-voltage electrode (5) to ensure that no gap exists between the high-voltage electrode (5) and the grounding electrode (7) when the sample (6) to be processed is fixed;
step 3, turning on a pulse power supply (12), applying high-voltage pulses to two ends of the sample (6) to be processed through a high-voltage electrode (5) and a grounding electrode (7), and forming uniform glow discharge on the surface of the sample (6) to be processed;
4, carrying out ablation treatment on the metal, the insulated bulges or burrs on the surface of the sample (6) to be treated by the low-temperature plasma generated by glow discharge in the step 3;
and 5, finishing the treatment of the sample (6) to be treated, and detecting the surface appearance of the sample.
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| 大气压脉冲放电等离子体的研究现状与展望;卢新培,严萍,任春生,邵涛;《中国科学：物理学 力学 天文学》;20110720;全文 * |
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