CN108281243B - Device and method for treating surface of micro-stack structure insulating material by discharge plasma - Google Patents

Abstract

The invention discloses a device for treating the surface of insulating material of a micro-stack structure by discharge plasma. The device comprises: one end of a high-voltage introduction electrode is connected to a pulse power supply through a high-voltage output terminal of a power supply, and the other end is connected to a high-voltage electrode through a high-voltage conductive rod; The electrode is set directly under the high-voltage electrode, and the ground electrode is connected to the base and grounded through the grounding conductive rod; the sample to be processed is fixed between the high-voltage electrode and the ground electrode, and the sample to be processed is closely attached to the high-voltage electrode and the ground electrode without any damage. gap. The invention also discloses a method for treating the surface of an insulating material of a micro-stack layer structure by discharge plasma, comprising: step 1, assembling a processing device according to the connection of each equipment; step 2, placing the sample to be processed to fix it on the high-voltage electrode and the There is no gap between the ground electrodes; step 3, turn on the pulse power supply to form a uniform glow discharge; step 4, the low-temperature plasma generated by the glow discharge performs ablation treatment on the surface of the treated sample.

Description

Apparatus and method for treating surface of insulating material of micro-stack structure by discharge plasma

technical field

The present invention relates to the technical field of insulators, and in particular, to a device and method for treating the surface of an insulating material of a micro-stack structure with discharge plasma.

Background technique

The micro-stacked insulating material, that is, the metal and insulating laminated composite insulating structure with a thickness of micrometers to millimeters, shows excellent creeping dielectric strength in DC, AC and pulsed high voltage, which greatly improves the insulation efficiency and quality. The realization of key functions of large-scale pulse power equipment and power equipment, as well as the way to miniaturize and improve efficiency.

The surface processing and treatment technology of micro-stacked insulating materials are the key technologies to ensure the realization of their performance. The micro-stack insulation preparation process is complicated, and the shape processing and surface treatment are carried out by means of mechanical processing, fine polishing and ultrasonic cleaning. Judging from the current use effect, it is difficult to guarantee the consistency of the flashover characteristics of the micro-stacked insulating material processed by this process, which is mainly caused by the surface treatment process of the insulator. It can be seen that the surface treatment process is the key technology for micro-stack insulation to achieve excellent flashover strength along the surface, and it is also a problem that must be solved in its wide application. The shape of the micro-stacked insulator needs to be obtained by mechanical processing. Although the current processing accuracy is very high, the surface seems to be very smooth, but due to the huge difference in the mechanical properties of metal and insulating materials, microscopically, there are micro-convexities on the surface of the metal layer. Raises and glitches are inevitable. The strong field effect of the metal protrusion will significantly affect the unevenness of the interface between the two, causing the metal layer electron emission, electron charge movement and mutual collision characteristics to change drastically, resulting in local electric field concentration, resulting in faster insulation damage. , so to achieve the excellent insulation performance of the micro-stack insulation, there must be a good surface treatment process guarantee.

Plasma surface treatment technology is a high-tech environmental protection new technology in the field of material surface treatment science. The use of low-temperature plasma surface treatment technology can effectively remove the metal protrusions and contaminants on the surface of the insulating material, grind the metal layer, and use the plasma technology to perform surface treatment on the insulation of the micro-stack layer to eliminate the metal protrusion on the surface of the insulation material of the micro-stack layer. , burrs, insulation protrusions, to ensure the uniformity of the surface, reduce the dispersion of the insulation properties of the material, and improve the overall insulation strength of the material along the surface.

SUMMARY OF THE INVENTION

In order to solve the above-mentioned problems, the purpose of the present invention is to provide a device and method for treating the surface of the insulating material of the micro-stacked layer structure by discharge plasma, so as to eliminate the metal, insulating protrusions and burrs on the surface of the insulating material of the micro-stacked layer, and ensure the surface of the insulating material. Uniform and consistent, reducing the dispersion of the insulation properties of the material, and improving the overall insulation strength of the material along the surface.

The invention provides a device for treating the surface of an insulating material of a micro-stack structure with discharge plasma, the device comprising:

a high-voltage lead-in pole, one end of which is connected to the pulse power supply through a high-voltage output terminal of the power supply, and the other end of the high-voltage lead-in pole is connected to the high-voltage electrode through a high-voltage conductive rod;

a grounding electrode, which is arranged directly below the high-voltage electrode, and the grounding electrode is connected to the base through a grounding conductive rod and grounded;

The sample to be processed is fixed between the high-voltage electrode and the ground electrode, and the sample to be processed is in close contact with the high-voltage electrode and the ground electrode without a gap.

As a further improvement of the present invention, an input insulator is sheathed outside the high-voltage lead-in pole.

As a further improvement of the present invention, the high-voltage conductive rod, the high-voltage electrode, the sample to be processed, the ground electrode and the grounded conductive rod are all located in a closed space formed by the discharge processing chamber shell and the base .

As a further improvement of the present invention, an air inlet port and an air outlet port are respectively provided on both sides of the housing of the discharge treatment chamber, and the air inlet port is connected to a gas cylinder, and the air outlet port is connected to a vacuum pump.

As a further improvement of the present invention, the pulse power output is a high-voltage pulse with a nanosecond repetition frequency, the pulse width is 20ns-200ns, the pulse discharge frequency is 200Hz-10k Hz, the voltage amplitude is 5kV-50kV, and the power is 200W ~2000W.

As a further improvement of the present invention, the vertical distance between the high voltage electrode and the ground electrode is 2 mm˜30 mm.

As a further improvement of the present invention, the sample to be processed is a cylinder, an elliptical cylinder or a flat plate.

As a further improvement of the present invention, when the sample to be processed is a cylinder or an elliptical cylinder, the high-voltage electrode and the ground electrode are circular flat plates, and the diameters of the high-voltage electrode and the ground electrode are It is more than 2 times the longest direction distance between the two and the contact surface of the sample to be processed and cannot be less than 20mm; when the sample to be processed is flat, the high-voltage electrode and the ground electrode are finger-shaped or strip, the length of the high voltage electrode and the ground electrode is more than 5 times the distance between them, and the length of the high voltage electrode and the ground electrode is the same as the length of the sample to be processed or the The length of the treated area of the sample to be treated is the same.

As a further improvement of the present invention, the ground electrode is an electrode whose position is fixed, and the high-voltage electrode is an electrode whose position can be adjusted.

The present invention also provides a method for plasma treatment of the surface of the insulating material of the micro-stack structure, the method comprising the following steps:

Step 1. Assemble a device for treating the surface of the insulating material of the micro-stack structure with discharge plasma;

Step 2. Place the sample to be processed on the ground electrode, and adjust the position of the high-voltage electrode so that the sample to be processed is fixed between the high-voltage electrode and the ground electrode without a gap;

Step 3. Turn on the pulse power supply, apply a high-voltage pulse to both ends of the sample to be processed through the high-voltage electrode and the ground electrode, and form a uniform glow discharge on the surface of the sample to be processed;

In step 4 and step 3, the low-temperature plasma generated by the glow discharge performs ablation treatment on the metal, insulating protrusions or burrs on the surface of the sample to be treated;

Step 5. After the processing of the sample to be processed is completed, its surface morphology is detected.

The beneficial effects of the present invention are as follows: First, the method for treating the surface of a metal-insulating laminated composite material by low-temperature discharge plasma according to the present invention can make the surface of the metal-insulating laminated composite material smoother and reduce the electric field distortion of the material under an electric field. , which is beneficial to improve its flashover characteristics along the surface; secondly, the method provided by the present invention can solve the problem that general machining, grinding and polishing cannot eliminate the damage to the metal-insulating interface of the metal-insulating laminated structure material, and can also be applied to pure metal materials. And the surface treatment of insulating materials to eliminate burrs and protrusions on the surface of the material.

Description of drawings

FIG. 1 is a flowchart of a method for treating the surface of an insulating material of a micro-stack layer structure with discharge plasma according to an embodiment of the present invention;

2 is a schematic structural diagram of a device for treating a flat-type treated sample by a device for treating the surface of an insulating material of a micro-stack structure with discharge plasma according to an embodiment of the present invention;

3 is a side view of the connection mode of the flat-plate type processed sample, the high-voltage electrode and the ground electrode according to the embodiment of the present invention;

FIG. 4 is a top view of the connection mode of the flat-plate processed sample, the high-voltage electrode and the ground electrode according to the embodiment of the present invention;

FIG. 5 is a schematic structural diagram of a device for treating the surface of an insulating material of a micro-stack structure with discharge plasma according to an embodiment of the present invention, and a schematic structural diagram of a cylindrical sample to be treated.

In the figure,

1. High voltage lead-in pole; 2. Input insulator; 3. Discharge treatment chamber shell; 4. High-voltage conductive rod; 5. High-voltage electrode; 6. Processed sample; 7. Grounding electrode; 8. Grounding conductive rod; Interface; 10, pumping interface; 11, base; 12, pulse power supply; 13, high voltage output terminal of power supply; 14, vacuum pump; 15, gas cylinder.

Detailed ways

The present invention will be further described in detail below through specific embodiments and in conjunction with the accompanying drawings.

Example 1

As shown in FIG. 2, Embodiment 1 of the present invention describes a device for treating the surface of insulating material of a micro-stack structure with discharge plasma to treat a flat-type processed sample, and the device includes:

The high-voltage lead-in pole 1 has one end connected to the pulse power supply 12 through the power supply high-voltage output terminal 13, and the other end of the high-voltage lead-in pole 1 is connected to the high-voltage electrode 5 through the high-voltage conductive rod 4;

The ground electrode 7 is arranged directly below the high voltage electrode 5, and the ground electrode 7 is connected to the base 11 through the grounding conductive rod 8 and grounded;

The sample 6 to be processed is fixed between the high voltage electrode 5 and the ground electrode 7 , and the sample 6 to be processed is closely attached to the high voltage electrode 5 and the ground electrode 7 without a gap.

Further, a plurality of input insulators 2 are sheathed outside the high voltage lead-in pole 1 .

Further, the high-voltage conductive rod 4 , the high-voltage electrode 5 , the processed sample 6 , the ground electrode 7 and the grounded conductive rod 8 are all located in the closed space formed by the discharge processing chamber shell 3 and the base 11 .

Further, an air inlet port 9 and an air outlet port 10 are respectively provided on both sides of the discharge processing chamber shell 3 , and the air inlet port 9 is connected with the gas cylinder 15 , and the air outlet port 10 is connected with the vacuum pump 14 .

The device for treating the surface of the insulating material of the microstack structure by discharge plasma includes a power supply system, an electrode system and a discharge processing chamber for processing samples: the power supply system consists of a pulse power supply 12 and a high voltage output terminal 13 of the power supply; the electrodes The system consists of high-voltage introduction pole 1, high-voltage conductive rod 4, high-voltage electrode 5, grounding electrode 7 and grounding conductive rod 8; the discharge processing chamber is composed of input insulator 2, discharge processing chamber shell 3, inlet port 9, outlet port 10 and base composition. The high voltage electrode of the pulse power supply 12 is input to the high voltage electrode 5 through the high voltage introduction electrode 1 and the high voltage guide rod 4 of the discharge processing chamber. The base 11 of the discharge processing chamber is connected to the ground electrode 7 through the ground rod 8 . The sample 6 to be treated is a metal insulating layer type composite material, which is fixed between the high-voltage electrode 5 and the ground electrode 7. The two electrodes are closely attached to the sample 6 to be treated without any gap. The high-voltage electrode 5 and the ground electrode The electric field between 7 is uniform.

Further, the output of the pulse power supply 12 is a high-voltage pulse with a nanosecond repetition frequency, the pulse width is 20ns-200ns, the pulse discharge frequency is 200Hz-10k Hz, the voltage amplitude is 5kV-50kV, and the power is 200W-2000W. The parameter selection of the pulse power supply 12 needs to be determined according to the shape, height and diameter of the sample 6 to be processed, as well as the gas pressure and gas type in the discharge processing chamber. The higher the height of the sample 6 to be treated, the higher the voltage amplitude of the power supply discharge and the faster the frequency; the lower the air pressure in the discharge processing chamber, the lower the voltage amplitude of the power supply discharge and the slower the frequency. The relationship between the voltage amplitude, frequency and pulse width of the power supply discharge parameters is that the voltage amplitude increases, the frequency and pulse width decrease; the frequency increases, the voltage amplitude and pulse width decrease, the pulse width increases, the voltage amplitude and frequency decrease reduce. The parameters of the pulse power supply 12 are selected to ensure that the pulse discharge generates a uniform glow discharge on the surface of the sample 6 to be processed and forms plasma with a certain concentration. In order to ensure a uniform glow discharge on the surface of the sample 6 to be treated, in the air at 1 atmosphere, when the width of the sample 6 to be treated (ie the distance between the high voltage electrode 5 and the ground electrode 7) is within 5 mm, the pulse field The strong design can refer to 25kV/cm, pulse frequency 1kHz, pulse width 100ns; when the width of the sample 6 to be processed (ie the distance between the high voltage electrode 5 and the ground electrode 7) is between 5mm and 15mm, the discharge parameters of the pulse power supply are designed. For reference, the pulse field strength is 20kV/cm, the pulse frequency is 2kHz, and the pulse width is 100ns; when the width of the sample 6 to be processed (ie the distance between the high voltage electrode 5 and the ground electrode 7) is between 15mm and 30mm, the discharge parameters of the pulse power supply are designed The reference pulse field strength is 18kV/cm, the pulse frequency is 1kHz, and the pulse width is 100ns. The density of the formed plasma is between 10 ¹³ -10 ¹⁴ /cm ³ . In this embodiment, the gas in the discharge processing chamber can be nitrogen, air, or argon or other gases, and the discharge processing chamber can withstand an internal and external pressure of one atmosphere, generally tens to several thousand Pa. Moreover, the high-voltage input end of the discharge processing chamber and the outer shell 3 of the discharge processing chamber can withstand a nanosecond pulse voltage with a repetition frequency of 10 kHz and 30 kV at the highest.

Further, the vertical distance between the high voltage electrode 5 and the ground electrode 7 is 2 mm˜30 mm.

Further, when the sample 6 to be processed is a flat plate type, the high voltage electrode 5 and the ground electrode 7 are in the shape of fingers or strips, the length of the high voltage electrode 5 and the ground electrode 7 is more than 5 times the distance between them, and the high voltage The lengths of the electrode 5 and the ground electrode 7 are the same as the length of the sample 6 to be processed or the length of the area to be processed of the sample 6 to be processed. The direction of the electric field between the high-voltage electrode 5 and the ground electrode 7 is perpendicular to the longitudinal directions of the two.

Further, the ground electrode 7 is an electrode with a fixed position, and the high-voltage electrode 5 is an electrode with an adjustable position. When placing the sample 6 to be processed, first place the sample 6 to be processed on the ground electrode 7, and then adjust the distance between the high voltage electrode 5 and the ground electrode 7 by adjusting the position of the high voltage electrode 5, and finally make the sample to be processed 6 is fixed in the center of the two electrodes and closely fits with the two electrodes.

This embodiment is described with a processing area having a length of 20 mm and a width of 10 mm. As shown in Figure 2, the high voltage lead-in electrode 1 of the discharge processing chamber is fixed on one end of the high voltage conductive rod 4, and the other end is connected to the high voltage electrode 5. The low voltage electrode of the power supply and the metal base 11 of the discharge processing chamber are grounded together to form a discharge circuit. The discharge processing chamber base 11 is connected to the ground electrode 7 through the ground conductive rod 8 .

As shown in FIG. 3 , the high voltage electrode 5 and the ground electrode 7 are respectively pressed on the sample 6 to be processed, and the high voltage electrode 5 and the ground electrode 7 are in close contact with the sample 6 to be processed without any gap. The region of the sample to be treated 6 between the high voltage electrode 5 and the ground electrode 7 is the discharge treatment region of the sample to be treated 6 . As shown in FIG. 4 , in order to ensure that the electric field in the discharge treatment area is basically uniform, the two sides of the high voltage electrode 5 and the ground electrode 7 transition smoothly. The high-voltage electrode 5 and the ground electrode 7 have the same length as the sample 6 to be processed, which is 20 mm. The distance between the high voltage electrode 5 and the ground electrode 7 was the same as the width of the treated area of the treated sample 6, and was 10 mm.

As shown in FIG. 2 , the high voltage output from the pulse power supply 12 is applied to both ends of the sample 6 to be processed through the high voltage introduction electrode 1 , the high voltage conductive rod 4 , the high voltage electrode 5 , the ground electrode 7 , and the ground conductive rod 8 . The output voltage amplitude of the pulse power supply 12 is 18kV, the frequency is 5kHz, and the pulse width is 70ns. The continuous discharge produces a relatively uniform discharge plasma with a density of about 10 ¹³ /cm ³ , which continuously acts on the surface of the sample 6 to be treated, and erodes the metal, insulating protrusions and burrs on the surface of the sample 6 to be treated. The surface of 6 is smoother, the interface between the metal and the insulation is clearer, and the creeping dielectric strength of the treated sample 6 is improved.

Example 2

As shown in FIG. 5 , the second embodiment of the present invention is a device for treating the surface of insulating material of a micro-stack structure with discharge plasma to treat a cylindrical sample to be processed:

The difference between this embodiment and Embodiment 1 is that when the sample to be processed is a cylinder or an elliptical cylinder, the high-voltage electrode and the ground electrode are circular plates, and the high-voltage electrode and the The diameter of the ground electrode is more than 2 times the longest direction distance between the two and the contact surface of the sample to be processed and cannot be less than 20 mm. In this embodiment, low-pressure argon gas is used as the ambient gas, and a sample 6 to be processed having a diameter of 15 mm and a height of 20 mm is used as an example for description.

As shown in Figure 5, the high voltage lead-in electrode 1 of the discharge processing chamber is fixed on one end of the high voltage conductive rod 4, and the other end is connected to the high voltage electrode 5. The low voltage electrode of the power supply and the metal base 11 of the discharge processing chamber are grounded together to form a discharge circuit. The discharge processing chamber base 11 is connected to the ground electrode 7 through the ground conductive rod 8 . The high voltage electrode 5 is pressed and placed on the processed sample 6 in the center of the ground electrode 7, and the high voltage electrode 5 and the ground electrode 7 are in close contact with the processed sample 6 without any gap. The cylindrical side surface of the sample 6 to be treated is an electric discharge treatment area. In order to ensure that the electric field in the discharge treatment area is substantially uniform, the edges of the high voltage electrode 5 and the ground electrode 7 transition smoothly. The high-voltage electrode 5 and the ground electrode 7 are 40 mm in diameter and 15 mm in thickness.

As shown in FIG. 5 , the vacuum pump 14 evacuates the discharge processing chamber, and the vacuum degree in the discharge processing chamber reaches 10 ⁻⁴ Pa, the vacuum pump 14 stops pumping, and the air outlet 10 is closed. The gas cylinder 15 is fed with argon gas into the discharge processing chamber. When the vacuum degree in the discharge processing chamber reaches 10Pa, the input of argon gas is stopped, and the inlet port 9 is closed.

As shown in FIG. 5 , the high voltage output from the pulse power supply 12 is applied to both ends of the sample 6 to be processed through the high voltage introduction electrode 1 , the high voltage conductive rod 4 , the high voltage electrode 5 , the ground electrode 7 , and the ground conductive rod 8 . The output voltage amplitude of the pulse power supply 12 is 3.5kV, the frequency is 1kHz, and the pulse width is 70ns. The continuous discharge produces a relatively uniform discharge plasma with a density of about 10 ¹³ /cm ³ , which continuously acts on the surface of the sample 6 to be treated, and erodes the metal, insulating protrusions and burrs on the surface of the sample 6 to be treated. The surface of 6 is smoother, the interface between the metal and the insulation is clearer, and the creeping dielectric strength of the treated sample 6 is improved.

Example 3

As shown in FIG. 1 , Embodiment 2 of the present invention is a method for treating the surface of an insulating material of a micro-stack structure with discharge plasma, and the method includes the following steps:

Step 1. According to the connection relationship between the various devices in the device for treating the surface of the insulating material of the micro-stack layer structure according to any one of claims 1-9, assemble the device for treating the surface of the insulating material of the micro-stack layer structure by the discharge plasma : The high voltage introduction electrode 1 of the discharge treatment chamber is fixed on one end of the high voltage conductive rod 4, and the other end is connected to the high voltage electrode 5. The low voltage electrode of the power supply and the metal base 11 of the discharge treatment chamber are grounded together to form a discharge circuit. The discharge processing chamber base 11 is connected to the ground electrode 7 through the ground conductive rod 8 . The high voltage electrode 5 is pressed and placed on the processed sample 6 in the center of the ground electrode 7, and the high voltage electrode 5 and the ground electrode 7 are in close contact with the processed sample 6 without any gap.

Step 2. Place the processed sample 6 on the ground electrode 7, and adjust the position of the high-voltage electrode 5 so that the processed sample 6 is fixed between the high-voltage electrode 5 and the ground electrode 7 and there is no gap;

Step 3. Turn on the pulse power supply 12, apply a high-voltage pulse to both ends of the sample 6 to be processed through the high-voltage electrode 5 and the ground electrode 7, and form a uniform glow discharge on the surface of the sample 6 to be processed;

In step 4 and step 3, the low-temperature plasma generated by the glow discharge performs ablation treatment on the insulating protrusions or burrs on the surface of the sample 6 to be treated;

Step 5. After the processing of the sample 6 to be processed is completed, its surface morphology is detected.

The pulse power supply 12 applies a high-voltage pulse with a repetition rate of nanoseconds at both ends of the sample 6 to be processed through the high-voltage electrode 5 and the ground electrode 7, and a relatively uniform glow discharge is formed on the surface of the sample 6 to be processed, and the glow discharge generates a certain concentration of low-temperature plasma The metal, insulating protrusions, burrs, etc. on the surface of the sample 6 to be processed are melted, so that the surface of the insulating material of the micro-stack structure is smoother, and the interface between the metal and the insulation is clearer, thereby improving the insulation strength of the sample 6 along the surface.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims (8)

1. An apparatus for treating the surface of an insulating material with a micro-stack structure by discharge plasma, comprising:

one end of the high-voltage leading-in pole (1) is connected with a pulse power supply (12) through a power supply high-voltage output terminal (13), the other end of the high-voltage leading-in pole (1) is connected with a high-voltage electrode (5) through a high-voltage conducting rod (4), the pulse power supply (12) outputs high-voltage pulses with nanosecond repetition frequency, the pulse width of the high-voltage pulses is 20 ns-200 ns, the pulse discharge frequency is 200 Hz-10 kHz, the voltage amplitude is 5 kV-50 kV, and the power is 200W-2000W;

the grounding electrode (7) is arranged right below the high-voltage electrode (5), and the grounding electrode (7) is connected with the base (11) through a grounding conducting rod (8) and is grounded;

a sample (6) to be processed fixed between the high voltage electrode (5) and the ground electrode (7), wherein the sample (6) to be processed is in close contact with the high voltage electrode (5) and the ground electrode (7) without a gap;

when the sample (6) to be processed is a cylinder or an elliptic cylinder, the high-voltage electrode (5) and the grounding electrode (7) are in a circular flat plate shape, and the diameters of the high-voltage electrode (5) and the grounding electrode (7) are more than 2 times of the longest direction distance on the contact surface of the high-voltage electrode and the grounding electrode and the sample (6) to be processed and cannot be less than 20 mm; when the sample (6) to be processed is in a flat plate shape, the high-voltage electrode (5) and the grounding electrode (7) are in a finger shape or a strip shape, the length of the high-voltage electrode (5) and the length of the grounding electrode (7) are more than 5 times of the distance between the high-voltage electrode and the grounding electrode, and the length of the high-voltage electrode (5) and the length of the grounding electrode (7) are the same as the length of the sample (6) to be processed or the length of an area of the sample (6) to be processed.

2. The apparatus for treating the surface of an insulating material of a micro-stack structure by discharge plasma according to claim 1, wherein an input insulator (2) is externally sleeved on the high voltage leading-in electrode (1).

3. The apparatus for treating the surface of the insulation material with micro-stack structure by discharge plasma according to claim 1, wherein the high voltage conducting rod (4), the high voltage electrode (5), the sample to be treated (6), the grounding electrode (7) and the grounding conducting rod (8) are all in the closed space formed by the discharge treatment chamber shell (3) and the base (11).

4. The apparatus for treating the surface of the insulation material with the micro-stack structure by discharge plasma according to claim 3, wherein the discharge treatment chamber shell (3) is provided with an air inlet interface (9) and an air outlet interface (10) on two sides respectively, the air inlet interface (9) is connected with an air bottle (15), and the air outlet interface (10) is connected with a vacuum pump (14).

5. The apparatus for discharge plasma treatment of the surface of insulation material of micro-stack structure according to claim 1, characterized in that the vertical distance between the high voltage electrode (5) and the ground electrode (7) is 2mm to 30 mm.

6. The apparatus for treating the surface of an insulating material of a micro-stack structure by discharge plasma according to claim 1, wherein the sample (6) to be treated is a cylindrical, elliptical or flat plate.

7. The apparatus for discharge plasma treatment of the surface of insulation material of micro-stack structure according to claim 1, characterized in that the ground electrode (7) is a fixed electrode and the high voltage electrode (5) is an adjustable electrode.

8. A method for treating a surface of a micro-stack structured insulating material using the apparatus for treating a surface of a micro-stack structured insulating material by discharge plasma according to any one of claims 1 to 7, comprising the steps of:

step 1, assembling a device for treating the surface of an insulating material with a micro-stack structure by using discharge plasma;

step 2, placing the sample (6) to be processed on the grounding electrode (7), and adjusting the position of the high-voltage electrode (5) to ensure that no gap exists between the high-voltage electrode (5) and the grounding electrode (7) when the sample (6) to be processed is fixed;

step 3, turning on a pulse power supply (12), applying high-voltage pulses to two ends of the sample (6) to be processed through a high-voltage electrode (5) and a grounding electrode (7), and forming uniform glow discharge on the surface of the sample (6) to be processed;

4, carrying out ablation treatment on the metal, the insulated bulges or burrs on the surface of the sample (6) to be treated by the low-temperature plasma generated by glow discharge in the step 3;

and 5, finishing the treatment of the sample (6) to be treated, and detecting the surface appearance of the sample.

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