CN108274009A - A kind of restorative procedure of Cr targets - Google Patents
A kind of restorative procedure of Cr targets Download PDFInfo
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- CN108274009A CN108274009A CN201810125916.8A CN201810125916A CN108274009A CN 108274009 A CN108274009 A CN 108274009A CN 201810125916 A CN201810125916 A CN 201810125916A CN 108274009 A CN108274009 A CN 108274009A
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- targets
- repaired
- powder
- complex surface
- graphite jig
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000000843 powder Substances 0.000 claims abstract description 52
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 32
- 239000010439 graphite Substances 0.000 claims abstract description 32
- 238000005245 sintering Methods 0.000 claims abstract description 20
- 230000007547 defect Effects 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 7
- 238000002791 soaking Methods 0.000 claims description 7
- 238000005303 weighing Methods 0.000 claims description 7
- 238000005054 agglomeration Methods 0.000 claims description 3
- 230000002776 aggregation Effects 0.000 claims description 3
- 239000013077 target material Substances 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000004064 recycling Methods 0.000 abstract description 3
- 239000011651 chromium Substances 0.000 description 117
- 230000008439 repair process Effects 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 238000009418 renovation Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
- B22F2003/1051—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding by electric discharge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
- B22F2007/068—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts repairing articles
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
Abstract
The invention discloses a kind of restorative procedures of Cr targets, it is that Cr targets to be repaired are put into graphite jig, then the Cr powder needed for repairing is added, Cr powder is set to be located on the complex surface to be repaired of Cr targets, after precompressed, it places into discharge plasma sintering system and is sintered connection, so that Cr powder is filled in the out-of-flatness defect area of Cr targets complex surface to be repaired, that is, complete the reparation of Cr targets.The present invention uses SPS technologies, by selecting suitable sintering parameter, it can be complete by the defect mending of Cr target material surfaces, and fine microstructures, consistency height, tensile property are consistent with former target after repairing, it solves the problems, such as that after existing Cr target material surfaces generate defect recycling can not be repaired, and it is simple for process, the period is short, production efficiency is high, the use cost of Cr targets can be greatly lowered.
Description
Technical field
The invention belongs to field of powder metallurgy, and in particular to a kind of restorative procedure of chromium target.
Background technology
Cr sputtering target materials are widely used in electronics and information industry, such as integrated circuit, information storage, liquid crystal display, swash
Optical memory, electronic control device etc.;It is equally applicable for coating film on glass field;Can also be applied to wear-resistant material, high temperature is anti-corrosion,
The industries such as high-grade adornment.Its principle is to add a quadrature field and electricity between anode in the target pole (cathode) being sputtered
, it is filled with required inert gas (be usually Ar gas) in high vacuum chamber, permanent magnet forms 250 in target surfaces~
The magnetic field of 350 Gausses forms crossed electric and magnetic field with high voltage electric field.Under the action of electric field, Ar gas is ionized into cation and electronics,
Added with certain negative high voltage on target, the electronics sent out from target pole is increased by the effect in magnetic field and the ionization probability of working gas,
Cathode is formed about highdensity plasma, and Ar ions accelerate to fly to target surface under the action of Lorentz force, with very high speed
Degree bombardment target surface makes the atom for being sputtered out on target follow momentum transfer principle and flies to substrate with higher kinetic energy disengaging target surface
Deposit film forming.Under the conditions of working long hours, Cr target material surfaces will appear defect, influence the performance and used life of material.But mesh
Before there is no the effective ways repaired to Cr targets, cause Cr target material surfaces generate defect after can not repair recycling, no
But the serious wasting of resources can be caused, but also heavy metal pollution can be caused.
Invention content
For existing deficiencies in the technology, the present invention provides a kind of restorative procedures of Cr targets, it is intended to logical
The method of overdischarge plasma agglomeration (SPS) realizes the reparation of Cr targets.
The present invention solves technical problem, adopts the following technical scheme that:
The present invention provides a kind of restorative procedure of Cr targets, feature is:Cr targets to be repaired are put into graphite
In mold, the Cr powder needed for repairing then is added, so that Cr powder is located on the complex surface to be repaired of Cr targets, after precompressed, places into and put
It is sintered connection in electric plasma agglomeration system, Cr powder is made to be filled in the out-of-flatness defect area of Cr targets complex surface to be repaired,
Complete the reparation of Cr targets.Specifically include following steps:
Step 1 clears up the complex surface to be repaired of Cr targets to be repaired, then sharp to remove impurity and oxide layer
The volume for filling up Cr powder needed for the out-of-flatness defect area of Cr targets complex surface to be repaired is calculated with Archimedes's drainage;
The oxygen content for weighing respective volume is spare less than the Cr powder of 500ppm, grain size between 80~400 mesh;
Cr targets after cleaning are put into graphite jig by step 2, add Cr powder, and Cr powder is made to be located at Cr targets
On complex surface to be repaired;Precompressed is carried out to the graphite jig for installing Cr targets and Cr powder using hand-operated hydraulic press, pressure 8~
12MPa;
Step 3, after the prepressing graphite jig periphery wrap the carbon felt of the 4~6mm thickness contour with graphite jig, then are set
In the furnace chamber of discharge plasma sintering system, 5Pa is evacuated to hereinafter, being sintered connection to Cr powder and Cr targets, is sintered
Technique is:
Axial mechanical pressure:10~50MPa,
Heating rate:10~80 DEG C/min,
Sintering temperature:1200~1350 DEG C,
Soaking time:5~20min;
After furnace cooling, that is, the reparation of Cr targets is completed, obtains that consistency is high, Cr targets after reparation of excellent in mechanical performance
Material.
Further, the Cr target diameters repaired are more than 20mm, draw ratio is 0.05~1.0.
Further, the heating rate is 30~80 DEG C/min in room temperature to 1000 DEG C of sections, and 1000 DEG C or more are 10
~30 DEG C/min.
Further, the axial mechanical pressure is by the way of gradient pressurization:As temperature < 1200, axial compressive force is
10MPa;When temperature >=1200 DEG C, axial compressive force is 40~50MPa.
Beneficial effects of the present invention are embodied in:
1, the present invention uses SPS technologies, can be complete by the defect mending of Cr target material surfaces by selecting suitable sintering parameter
It is whole, and fine microstructures, consistency are high after repairing, it is almost consistent with former target, it efficiently solves existing Cr target material surfaces generation and lacks
The problem of recycling can not be repaired after falling into, and it is simple for process, the period is short, production efficiency is high, making for Cr targets can be greatly lowered
Use cost.
2, the present invention can select the graphite jig and pressure head of suitable dimension according to the size of Cr targets to be repaired, so as to
Realize various Cr targets reparations.
3, present invention optimizes the renovation techniques of Cr targets, are used not to the Cr target cylinder ingots of different-diameter and draw ratio
Same process conditions, can be such that its performance further improves.
4, the present invention, which repairs obtained Cr target materials, has good hardness, and tensile property and former target tensile property
Unanimously, it has a extensive future.
Description of the drawings
Fig. 1 is the microstructure photo of Cr targets junction after being repaired in the embodiment of the present invention 3.
Specific implementation mode
It elaborates to the present invention with reference to embodiment, following embodiments are under based on the technical solution of the present invention
Implemented, give detailed embodiment and specific operating process, but protection scope of the present invention be not limited to it is following
Embodiment.
In following embodiments, oxygen content is selected to be less than the metal Cr powder of 500ppm, grain size between 80~400 mesh.
Discharge plasma sintering stove used in following embodiments is the LABOX systems of Sinter Land Inc companies of Japan production
Row discharge plasma sintering system, current type are DC pulse current, pulse train 40:7.
Embodiment 1
The present embodiment repairs the Cr target cylinder ingots of Φ 30mm × 30mm, is as follows:
Step 1 selects turner to clear up the complex surface to be repaired of Cr targets to be repaired, to remove impurity and oxidation
Layer, is then calculated using Archimedes's drainage and fills up Cr powder needed for the out-of-flatness defect area of Cr targets complex surface to be repaired
Volume;
The Cr powder for weighing respective volume is spare;
Cr targets after cleaning are put into graphite jig by step 2, add Cr powder, and Cr powder is made to be located at Cr targets
On complex surface to be repaired;Using hand-operated hydraulic press to install Cr targets and Cr powder graphite jig carry out precompressed, pressure be~
10MPa;
Step 3, after the prepressing graphite jig periphery wrap with graphite jig it is contour~carbon felt of 5mm thickness, then set
In the furnace chamber of discharge plasma sintering system, 5Pa is evacuated to hereinafter, being sintered connection to Cr powder and Cr targets, is sintered
Technique is:
Axial mechanical pressure:By the way of gradient pressurization (room temperature to 1200 DEG C, pressure 10MPa;1200~1250
DEG C, pressure 40MPa)
Heating rate:For room temperature to 1000 DEG C, heating rate is 50 DEG C/min;1000~1250 DEG C, heating rate be 30 DEG C/
min;
Sintering temperature:1250 DEG C,
Soaking time:10min;
After furnace cooling, that is, the reparation of Cr targets is completed, obtains Cr targets after Φ 30mm × 30mm reparations of high-compactness
Cylinder ingots, oxygen content 270ppm, consistency 97.01%, tensile strength 40.53MPa.
Embodiment 2
The present embodiment repairs the Cr target cylinder ingots of Φ 30mm × 30mm, is as follows:
Step 1 selects turner to clear up the complex surface to be repaired of Cr targets to be repaired, to remove impurity and oxidation
Layer, is then calculated using Archimedes's drainage and fills up Cr powder needed for the out-of-flatness defect area of Cr targets complex surface to be repaired
Volume;
The Cr powder for weighing respective volume is spare;
Cr targets after cleaning are put into graphite jig by step 2, add Cr powder, and Cr powder is made to be located at Cr targets
On complex surface to be repaired;Using hand-operated hydraulic press to install Cr targets and Cr powder graphite jig carry out precompressed, pressure be~
10MPa;
Step 3, after the prepressing graphite jig periphery wrap with graphite jig it is contour~carbon felt of 5mm thickness, then set
In the furnace chamber of discharge plasma sintering system, 5Pa is evacuated to hereinafter, being sintered connection to Cr powder and Cr targets, is sintered
Technique is:
Axial mechanical pressure:By the way of gradient pressurization (room temperature to 1200 DEG C, pressure 10MPa;1200-1300 DEG C,
Pressure is 50MPa);
Heating rate:For room temperature to 1000 DEG C, heating rate is 50 DEG C/min;1000~1300 DEG C, heating rate be 30 DEG C/
min;
Sintering temperature:1300℃;
Soaking time:15min;
After furnace cooling, that is, the reparation of Cr targets is completed, obtains Cr targets after Φ 30mm × 30mm reparations of high-compactness
Cylinder ingots, oxygen content 300ppm, consistency 97.90%, tensile strength 86.50MPa.
Embodiment 3
The present embodiment repairs the Cr target cylinder ingots of Φ 30mm × 30mm, is as follows:
Step 1 selects turner to clear up the complex surface to be repaired of Cr targets to be repaired, to remove impurity and oxidation
Layer, is then calculated using Archimedes's drainage and fills up Cr powder needed for the out-of-flatness defect area of Cr targets complex surface to be repaired
Volume;
The Cr powder for weighing respective volume is spare;
Cr targets after cleaning are put into graphite jig by step 2, add Cr powder, and Cr powder is made to be located at Cr targets
On complex surface to be repaired;Using hand-operated hydraulic press to install Cr targets and Cr powder graphite jig carry out precompressed, pressure be~
10MPa;
Step 3, after the prepressing graphite jig periphery wrap with graphite jig it is contour~carbon felt of 5mm thickness, then set
In the furnace chamber of discharge plasma sintering system, 5Pa is evacuated to hereinafter, being sintered connection to Cr powder and Cr targets, is sintered
Technique is:
Axial mechanical pressure:By the way of gradient pressurization (room temperature to 1200 DEG C, pressure 10MPa;1200~1350
DEG C, pressure 50MPa);
Heating rate:For room temperature to 1000 DEG C, heating rate is 50 DEG C/min;1000~1350 DEG C, heating rate be 30 DEG C/
min;
Sintering temperature:1350℃;
Soaking time:20min;
After furnace cooling, that is, the reparation of Cr targets is completed, obtains Cr targets after Φ 30mm × 30mm reparations of high-compactness
Cylinder ingots, oxygen content 300ppm, consistency 98.80%, tensile strength 90.83MPa.
Fig. 1 is the microstructure photo of Cr targets junction after the present embodiment is repaired, it can be seen that is organized after target repairing
It is tiny, consistency is high.
Embodiment 4
The present embodiment repairs the Cr target cylinder ingots of Φ 50mm × 30mm, is as follows:
Step 1 selects turner to clear up the complex surface to be repaired of Cr targets to be repaired, to remove impurity and oxidation
Layer, is then calculated using Archimedes's drainage and fills up Cr powder needed for the out-of-flatness defect area of Cr targets complex surface to be repaired
Volume;
The Cr powder for weighing respective volume is spare;
Cr targets after cleaning are put into graphite jig by step 2, add Cr powder, and Cr powder is made to be located at Cr targets
On complex surface to be repaired;Using hand-operated hydraulic press to install Cr targets and Cr powder graphite jig carry out precompressed, pressure be~
10MPa;
Step 3, after the prepressing graphite jig periphery wrap with graphite jig it is contour~carbon felt of 5mm thickness, then set
In the furnace chamber of discharge plasma sintering system, 5Pa is evacuated to hereinafter, being sintered connection to Cr powder and Cr targets, is sintered
Technique is:
Axial mechanical pressure:By the way of gradient pressurization (room temperature to 1200 DEG C, pressure 10MPa;1200-1300 DEG C,
Pressure is 40MPa);
Heating rate:For room temperature to 1000 DEG C, heating rate is 50 DEG C/min;1000~1300 DEG C, heating rate be 30 DEG C/
min;
Sintering temperature:1300℃;
Soaking time:10min;
After furnace cooling, that is, the reparation of Cr targets is completed, obtains Cr targets after Φ 50mm × 30mm reparations of high-compactness
Cylinder ingots, oxygen content 360ppm, consistency 97.95%, tensile strength 85.35MPa.
Embodiment 5
The present embodiment repairs the Cr target cylinder ingots of Φ 60mm × 45mm, is as follows:
Step 1 selects turner to clear up the complex surface to be repaired of Cr targets to be repaired, to remove impurity and oxidation
Layer, is then calculated using Archimedes's drainage and fills up Cr powder needed for the out-of-flatness defect area of Cr targets complex surface to be repaired
Volume;
The Cr powder for weighing respective volume is spare;
Cr targets after cleaning are put into graphite jig by step 2, add Cr powder, and Cr powder is made to be located at Cr targets
On complex surface to be repaired;Using hand-operated hydraulic press to install Cr targets and Cr powder graphite jig carry out precompressed, pressure be~
10MPa;
Step 3, after the prepressing graphite jig periphery wrap with graphite jig it is contour~carbon felt of 5mm thickness, then set
In the furnace chamber of discharge plasma sintering system, 5Pa is evacuated to hereinafter, being sintered connection to Cr powder and Cr targets, is sintered
Technique is:
Axial mechanical pressure:By the way of gradient pressurization (room temperature to 1200 DEG C, pressure 10MPa;1200-1300 DEG C,
Pressure is 50MPa);
Heating rate:For room temperature to 1000 DEG C, heating rate is 50 DEG C/min;1000~1300 DEG C, heating rate be 30 DEG C/
min;
Sintering temperature:1200℃;
Soaking time:15min;
After furnace cooling, that is, the reparation of Cr targets is completed, obtains Cr targets after Φ 60mm × 45mm reparations of high-compactness
Cylinder ingots, oxygen content 400ppm, consistency 96.75%, tensile strength 45.37MPa.
It these are only exemplary embodiment of the present invention, be not intended to limit the invention, all spirit in the present invention
With within principle made by all any modification, equivalent and improvement etc., should all be included in the protection scope of the present invention.
Claims (5)
1. a kind of restorative procedure of Cr targets, it is characterised in that:Cr targets to be repaired are put into graphite jig, are then added
Cr powder needed for repairing, makes Cr powder be located on the complex surface to be repaired of Cr targets, after precompressed, places into discharge plasma sintering system
In be sintered connection, so that Cr powder is filled in the out-of-flatness defect area of Cr targets complex surface to be repaired, that is, complete repairing for Cr targets
It is multiple.
2. the restorative procedure of Cr targets according to claim 1, which is characterized in that include the following steps:
Step 1 clears up the complex surface to be repaired of Cr targets to be repaired, to remove impurity and oxide layer, then utilizes Ah
Base Mead drainage calculates the volume of Cr powder needed for the out-of-flatness defect area for filling up Cr targets complex surface to be repaired;
The oxygen content for weighing respective volume is spare less than the Cr powder of 500ppm, grain size between 80~400 mesh;
Cr targets after cleaning are put into graphite jig by step 2, add Cr powder, and Cr powder is made to be located at the to be repaired of Cr targets
On complex surface;Precompressed is carried out to the graphite jig for installing Cr targets and Cr powder using hand-operated hydraulic press, pressure is in 8~12MPa;
Step 3, after the prepressing graphite jig periphery wrap the carbon felt of the 4~6mm thickness contour with graphite jig, then place it in and put
In the furnace chamber of electric plasma agglomeration system, 5Pa is evacuated to hereinafter, being sintered connection, sintering process to Cr powder and Cr targets
For:
Axial mechanical pressure:10~50MPa,
Heating rate:10~80 DEG C/min,
Sintering temperature:1200~1350 DEG C,
Soaking time:5~20min;
After furnace cooling, that is, complete the reparation of Cr targets, Cr targets after being repaired.
3. the restorative procedure of Cr targets according to claim 1 or 2, it is characterised in that:The Cr target diameters repaired are big
In 20mm, draw ratio be 0.05~1.0.
4. the restorative procedure of Cr targets according to claim 2, it is characterised in that:The heating rate is in room temperature to 1000
DEG C section is 30~80 DEG C/min, and 1000 DEG C or more are 10~30 DEG C/min.
5. the restorative procedure of Cr targets according to claim 2, it is characterised in that:The axial direction mechanical pressure uses gradient
The mode of pressurization:As 1200 DEG C of temperature <, axial compressive force 10MPa;When temperature >=1200 DEG C, axial compressive force be 40~
50MPa。
Priority Applications (1)
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CN201810125916.8A CN108274009B (en) | 2018-02-08 | 2018-02-08 | Cr target material repairing method |
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CN201810125916.8A CN108274009B (en) | 2018-02-08 | 2018-02-08 | Cr target material repairing method |
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CN108274009A true CN108274009A (en) | 2018-07-13 |
CN108274009B CN108274009B (en) | 2020-05-22 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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