CN108269794A - A kind of integrated form plant growth light source encapsulating structure and its manufacture craft - Google Patents
A kind of integrated form plant growth light source encapsulating structure and its manufacture craft Download PDFInfo
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- CN108269794A CN108269794A CN201810257854.6A CN201810257854A CN108269794A CN 108269794 A CN108269794 A CN 108269794A CN 201810257854 A CN201810257854 A CN 201810257854A CN 108269794 A CN108269794 A CN 108269794A
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- 230000008635 plant growth Effects 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000000712 assembly Effects 0.000 claims abstract description 34
- 238000000429 assembly Methods 0.000 claims abstract description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000003292 glue Substances 0.000 claims abstract description 11
- 241000218202 Coptis Species 0.000 claims abstract description 10
- 235000002991 Coptis groenlandica Nutrition 0.000 claims abstract description 10
- 238000004806 packaging method and process Methods 0.000 claims abstract description 10
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 10
- 239000000741 silica gel Substances 0.000 claims abstract description 10
- 238000001228 spectrum Methods 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 18
- 238000000605 extraction Methods 0.000 claims description 6
- 238000004088 simulation Methods 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 150000003377 silicon compounds Chemical class 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- -1 silicon oxide compound Chemical class 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 26
- 241000196324 Embryophyta Species 0.000 description 13
- 238000005286 illumination Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 4
- 241001465382 Physalis alkekengi Species 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cultivation Of Plants (AREA)
Abstract
The present invention provides a kind of integrated form plant growth light source encapsulating structure and its manufacture crafts, including substrate, a corral dam glue is provided on the substrate, the substrate surface is provided with a negative terminal pad and a positive terminal pad, a wafer assemblies are provided on the substrate, and wafer assemblies are located in the box dam glue, each chip in the wafer assemblies is connected in series or in parallel, first chip in the wafer assemblies is connect by gold thread with the negative terminal pad, the last one chip in the wafer assemblies is connect by gold thread with the positive terminal pad；The wafer assemblies, negative terminal pad, positive terminal pad are by silica gel packaging on substrate.The manufacture craft of the present invention is simple, and overall structure reduces the manufacture cost of enterprise, overcomes the problem of existing small-power packaging thermal resistance is higher.
Description
Technical field
The present invention relates to technical field of semiconductor encapsulation, especially for the semiconductor packages skill of full spectral series plant illumination
Art, particularly a kind of integrated form plant growth light source encapsulating structure.
Background technology
Plant growth light source encapsulation technology is using tradition SMD at present（Surface mount device）Encapsulation, SMD packaging bodies are single
Wavelength chip, power pastes individual packaging body on substrate when being assembled into lamps and lanterns within 3W, by being designed on substrate
Circuit completes circuit connection；Traditional SMD（Surface mount device）There are the following problems for encapsulation technology：
1. current technology uses middle low power Single wavelength chip package, spectrum is single, needs the assembling of multi-wavelength's lamp bead that could meet
Plant illumination grows demand, and manufacturing cost is high, and assembly expenses are higher 5-10% than integrated form；
2. traditional middle low power packaging thermal resistance is higher, and power can only be accomplished in 3W, can not sufficient high-power output and large area plant
Object illuminates growth demand.
It is adjusted in addition, the existing Illumination adjusting to plant also adjusts circuit by spectrum, not only circuit is complicated, into
This height, and LED greatly shortens the working life through overregulating, and the illumination for some simple specific environments does not apply to simultaneously.
Invention content
In order to overcome the problems referred above, the object of the present invention is to provide a kind of integrated form plant growth light source encapsulating structures, improve
The situation of traditional single spectrum output of middle low power lamp bead is, it can be achieved that full spectrum output, reduces manufacture cost.
The present invention is realized using following scheme：A kind of integrated form plant growth light source encapsulating structure, including substrate, the base
A corral dam glue is provided on plate, the substrate surface is provided with a negative terminal pad and a positive terminal pad, is set on the substrate
There are a wafer assemblies, and wafer assemblies are located in the box dam glue, the wafer assemblies include first that wavelength is 365 ~ 380nm
Chip, wavelength are the second chip of 405 ~ 425nm, wavelength is the third wafer of 445 ~ 465nm, wavelength is 520 ~ 550nm
Four chips, wavelength are the 5th chip of 575 ~ 590nm, wavelength is the 6th chip of 650 ~ 656nm, wavelength is 725 ~ 735nm's
Arbitrary two kinds or the arbitrarily chip of two or more combinations, and each chip in wafer assemblies is connected in 7th chip
Or be connected in parallel, the first chip in the wafer assemblies is connect by gold thread with the negative terminal pad, the wafer assemblies
In the last one chip connect by gold thread with the positive terminal pad；The wafer assemblies, negative terminal pad, positive terminal pad pass through
Silica gel packaging is on substrate.
Further, each chip in the wafer assemblies is fixed by crystal-bonding adhesive on substrate.
It is a further object of the present invention to provide a kind of manufacture crafts of integrated form plant growth light source encapsulating structure, can improve
The situation of traditional single spectrum output of middle low power lamp bead is, it can be achieved that full spectrum output, reduces manufacture cost.
The present invention is realized using following scheme：A kind of manufacture craft of integrated form plant growth light source encapsulating structure, it is special
Sign is to include the following steps：
Step S01：Carry out spectrum extraction needed for plant growth；
Step S02：Plant growth spectrum according to extraction arranges in pairs or groups to chip wavelength and quantitative proportion, and carry out spectrum simulation；
Step S03：One substrate is provided, a corral dam glue is provided on the substrate and forms bowl, the substrate surface is provided with
One negative terminal pad and a positive terminal pad；
Step S04：Variety classes chip needed for after spectrum simulation is fixed to bowl corresponding position, passes through string or parallel way
Negative terminal pad and positive terminal pad are connected, to reach high voltage and high-power output and multispectral output；
Step S05：By the chip, negative terminal pad, positive terminal pad by silica gel packaging on the substrate.
Further, it is dispersed with insulating particle in the silica gel；The light transmittance of the insulating particle between 80% ~
100% 。
Further, the insulating particle diameter is between 10nm ~ 10um.
Further, the material composition of the insulating particle include but not limited to silica, zirconium oxide, silicon oxide compound,
And silicon compound.
Further, the insulating particle is Transparent color insulating particle.
Further, the chip including wavelength be the first chip of 365 ~ 380nm, second that wavelength is 405 ~ 425nm
Chip, wavelength are the third wafer of 445 ~ 465nm, wavelength is 520 ~ 550nm the 4th chip, that wavelength is 575 ~ 590nm
Arbitrary two kinds or arbitrary in five chips, the 6th chip that wavelength is 650 ~ 656nm, the 7th chip that wavelength is 725 ~ 735nm
The chip of two or more combinations.
The beneficial effects of the present invention are：Full spectrum output can be achieved, reduce lamps and lanterns patch cost, improve power conversion effect
Rate, and if large area plant light compensation middle low power LED plant lamps, it has not been convenient to manage, with integrated form plant growth light source seal
Assembling structure reduces indoor numerous and diverse circuit, facilitates management, moreover it is possible to meet the needs of plant growth well, in addition, the present invention will envelope
Dress technology is matched with plant illumination, the problem of not only addressing only semiconductor packages cost and service life, but also can be with
Plant illumination is directly applied to, the characteristic that can be directed to plant is produced, and greatly solves the existing additionally mounted brightness of needs
Adjustment equipment there are the drawbacks of.
Description of the drawings
Fig. 1 is the cross-sectional view of the present invention.
Fig. 2 is the distributed architecture schematic diagram of each chip in wafer assemblies in first embodiment of the invention.
Fig. 3 is the distributed architecture schematic diagram of each chip in wafer assemblies in second embodiment of the invention.
Fig. 4 is the cross-sectional view of third embodiment of the invention.
Specific embodiment
The present invention will be further described below in conjunction with the accompanying drawings.
Please refer to Fig.1 with shown in Fig. 2, a kind of integrated form plant growth light source encapsulating structure of first embodiment of the invention,
Including substrate 1, it is provided with a corral dam glue 2 on the substrate 1,1 surface of substrate is being provided with a negative terminal pad 11 and one just
Pole pad 12 is provided with a wafer assemblies 3, and wafer assemblies 3 are located in the box dam glue 2 on the substrate 1, the chipset
Part 3 includes the first chip 31 that wavelength is 365 ~ 380nm, the chip of the second chip 32 that wavelength is 405 ~ 425nm combination, and brilliant
Each chip in piece component 3 is connected in series or in parallel；It can arrange in pairs or groups in this way according to spectrum needed for plant production different
Ratio wavelength and number of wafers, power can reach 10 ~ 50W；So as to reduce manufacture cost, and reduce indoor numerous and diverse circuit, conveniently
Management.The first chip 31 in the wafer assemblies 3 is connect by gold thread 4 with the negative terminal pad, in the wafer assemblies 3
Second chip 32 is connect by gold thread 4 with the positive terminal pad；The wafer assemblies 3, negative terminal pad 11, positive terminal pad 12 pass through
Silica gel 5 encapsulates on substrate 1.Wafer assemblies form an encapsulating structure in this way.
In addition, in the present invention, each chip in the wafer assemblies 3 is fixed by crystal-bonding adhesive in substrate 1
On.
Please refer to shown in Fig. 3, the second embodiment of the present invention and first embodiment difference lies in：The wafer assemblies 3
It is 445 ~ 465nm's including the first chip 31, the second chip 32 that wavelength is 405 ~ 425nm, wavelength that wavelength is 365 ~ 380nm
Third wafer 33, wavelength are the 4th chip 34 of 520 ~ 550nm, wavelength is the 5th chip 35 of 575 ~ 590nm, wavelength be 650 ~
The chip that the 6th chip 36 of 656nm, the 7th chip 37 that wavelength is 725 ~ 735nm combine, and each crystalline substance in wafer assemblies 3
Piece is connected in series or in parallel, and the first chip in the wafer assemblies 3 is connected by gold thread 4 and the negative terminal pad 11
It connects, the last one chip in the wafer assemblies is connect by gold thread 4 with the positive terminal pad 12.Furthermore it is possible to according to plant
Spectrum needed for object production carries out Optional assembling chip.
In addition the embodiment of the present invention provides a kind of manufacture craft of integrated form plant growth light source encapsulating structure, feature exists
In including the following steps：
Step S01：Carry out spectrum extraction needed for plant growth；
Step S02：Plant growth spectrum according to extraction arranges in pairs or groups to chip wavelength and quantitative proportion, and carry out spectrum simulation；
Step S03：One substrate is provided, a corral dam glue is provided on the substrate and forms bowl, the substrate surface is provided with
One negative terminal pad and a positive terminal pad；
Step S04：Variety classes chip needed for after spectrum simulation is fixed to bowl corresponding position, passes through string or parallel way
Negative terminal pad and positive terminal pad are connected, to reach high voltage and high-power output and multispectral output；
Step S05：By the chip, negative terminal pad, positive terminal pad by silica gel packaging on the substrate.
Fig. 4 is referred to, further, insulating particle 6 is dispersed in the silica gel；The light transmittance of the insulating particle
Between 80% ~ 100%.
Further, the insulating particle diameter is between 10nm ~ 10um.
Further, the material composition of the insulating particle include but not limited to silica, zirconium oxide, silicon oxide compound,
And silicon compound.
Further, the insulating particle is Transparent color insulating particle.
Further, the chip including wavelength be the first chip of 365 ~ 380nm, second that wavelength is 405 ~ 425nm
Chip, wavelength are the third wafer of 445 ~ 465nm, wavelength is 520 ~ 550nm the 4th chip, that wavelength is 575 ~ 590nm
Arbitrary two kinds or arbitrary in five chips, the 6th chip that wavelength is 650 ~ 656nm, the 7th chip that wavelength is 725 ~ 735nm
The chip of two or more combinations.
In short, full spectrum output can be achieved in the present invention, lamps and lanterns patch cost is reduced, improves power conversion efficiency, and big face
If product plant light compensation middle low power LED plant lamps, it has not been convenient to manage, with integrated form plant growth light source encapsulating structure, subtract
Numerous and diverse circuit in Shaoshi facilitates management, moreover it is possible to meet the needs of plant growth well.
The foregoing is merely presently preferred embodiments of the present invention, all equivalent changes done according to scope of the present invention patent with
Modification should all belong to the covering scope of the present invention.
Claims (8)
1. a kind of integrated form plant growth light source encapsulating structure, it is characterised in that：Including substrate, a circle is provided on the substrate
Box dam glue, the substrate surface are provided with a negative terminal pad and a positive terminal pad, and a wafer assemblies are provided on the substrate, and
Wafer assemblies are located in the box dam glue, the wafer assemblies including wavelength are the first chip of 365 ~ 380nm, wavelength be 405 ~
The second chip, the wavelength of 425nm is the third wafer of 445 ~ 465nm, the 4th chip, the wavelength 575 that wavelength is 520 ~ 550nm
Arbitrary two in the 5th chip of ~ 590nm, the 6th chip that wavelength is 650 ~ 656nm, the 7th chip that wavelength is 725 ~ 735nm
Kind or the chip of arbitrary two or more combinations, and each chip in wafer assemblies is connected in series or in parallel, it is described
First chip in wafer assemblies is connect by gold thread with the negative terminal pad, the last one chip in the wafer assemblies leads to
Gold thread is crossed to connect with the positive terminal pad；The wafer assemblies, negative terminal pad, positive terminal pad are by silica gel packaging on substrate.
2. a kind of integrated form plant growth light source encapsulating structure according to claim 1, it is characterised in that：The chipset
Each chip in part is fixed by crystal-bonding adhesive on substrate.
3. a kind of manufacture craft of integrated form plant growth light source encapsulating structure, it is characterised in that include the following steps：
Step S01：Carry out spectrum extraction needed for plant growth；
Step S02：Plant growth spectrum according to extraction arranges in pairs or groups to chip wavelength and quantitative proportion, and carry out spectrum simulation；
Step S03：One substrate is provided, a corral dam glue is provided on the substrate and forms bowl, the substrate surface is provided with
One negative terminal pad and a positive terminal pad；
Step S04：Variety classes chip needed for after spectrum simulation is fixed to bowl corresponding position, passes through string or parallel way
Negative terminal pad and positive terminal pad are connected, to reach high voltage and high-power output and multispectral output；
Step S05：By the chip, negative terminal pad, positive terminal pad by silica gel packaging on the substrate.
4. the manufacture craft of integrated form plant growth light source encapsulating structure according to claim 3, it is characterised in that：It is described
Insulating particle is dispersed in silica gel；The light transmittance of the insulating particle is between 80% ~ 100%.
5. the manufacture craft of integrated form plant growth light source encapsulating structure according to claim 1, it is characterised in that：It is described
Insulating particle diameter is between 10nm ~ 10um.
6. the manufacture craft of integrated form plant growth light source encapsulating structure according to claim 1, it is characterised in that：It is described
The material composition of insulating particle includes but not limited to silica, zirconium oxide, silicon oxide compound and silicon compound.
7. the manufacture craft of integrated form plant growth light source encapsulating structure according to claim 1, it is characterised in that：It is described
Insulating particle is Transparent color insulating particle.
8. the manufacture craft of integrated form plant growth light source encapsulating structure according to claim 1, it is characterised in that：It is described
Chip including wavelength is the first chip of 365 ~ 380nm, wavelength is the second chip of 405 ~ 425nm, wavelength is 445 ~ 465nm's
Third wafer, wavelength are the 4th chip of 520 ~ 550nm, wavelength is the 5th chip of 575 ~ 590nm, wavelength is 650 ~ 656nm
The 6th chip, in the 7th chip that wavelength is 725 ~ 735nm arbitrary two kinds or arbitrary two or more combinations chip.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810010698 | 2018-01-05 | ||
| CN2018100106983 | 2018-01-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108269794A true CN108269794A (en) | 2018-07-10 |
Family
ID=62778004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810257854.6A Pending CN108269794A (en) | 2018-01-05 | 2018-03-27 | A kind of integrated form plant growth light source encapsulating structure and its manufacture craft |
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| Country | Link |
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| CN (1) | CN108269794A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113054059A (en) * | 2020-04-23 | 2021-06-29 | 深圳市聚飞光电股份有限公司 | Display device, LED package and manufacturing method thereof |
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|---|---|---|---|---|
| CN201827759U (en) * | 2010-07-23 | 2011-05-11 | 张永亮 | LED lamp used for encapsulation having multi chip serial connection structure of plant growth |
| US20120161170A1 (en) * | 2010-12-27 | 2012-06-28 | GE Lighting Solutions, LLC | Generation of radiation conducive to plant growth using a combination of leds and phosphors |
| CN103220902A (en) * | 2010-11-25 | 2013-07-24 | 夏普株式会社 | Light emitting device, LED light source for plant cultivation, and plant factory |
| US20140240976A1 (en) * | 2011-09-16 | 2014-08-28 | Sharp Kabushiki Kaisha | Light emitting apparatus, and light irradiation apparatus provided with light emitting apparatus |
| CN205579195U (en) * | 2016-04-07 | 2016-09-14 | 蚌埠雷士照明科技有限公司 | LED lamp for vegetation |
| CN106601895A (en) * | 2016-11-30 | 2017-04-26 | 杨华琼 | Peculiar spectrum light emitting diode and application thereof |
| CN206432290U (en) * | 2017-01-17 | 2017-08-22 | 旭宇光电（深圳）股份有限公司 | A kind of LED plant light compensations light source |
-
2018
- 2018-03-27 CN CN201810257854.6A patent/CN108269794A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201827759U (en) * | 2010-07-23 | 2011-05-11 | 张永亮 | LED lamp used for encapsulation having multi chip serial connection structure of plant growth |
| CN103220902A (en) * | 2010-11-25 | 2013-07-24 | 夏普株式会社 | Light emitting device, LED light source for plant cultivation, and plant factory |
| US20120161170A1 (en) * | 2010-12-27 | 2012-06-28 | GE Lighting Solutions, LLC | Generation of radiation conducive to plant growth using a combination of leds and phosphors |
| US20140240976A1 (en) * | 2011-09-16 | 2014-08-28 | Sharp Kabushiki Kaisha | Light emitting apparatus, and light irradiation apparatus provided with light emitting apparatus |
| CN205579195U (en) * | 2016-04-07 | 2016-09-14 | 蚌埠雷士照明科技有限公司 | LED lamp for vegetation |
| CN106601895A (en) * | 2016-11-30 | 2017-04-26 | 杨华琼 | Peculiar spectrum light emitting diode and application thereof |
| CN206432290U (en) * | 2017-01-17 | 2017-08-22 | 旭宇光电（深圳）股份有限公司 | A kind of LED plant light compensations light source |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113054059A (en) * | 2020-04-23 | 2021-06-29 | 深圳市聚飞光电股份有限公司 | Display device, LED package and manufacturing method thereof |
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Application publication date: 20180710 |