CN108269748A - The detection method of wafer surface defects after a kind of CMP - Google Patents
The detection method of wafer surface defects after a kind of CMP Download PDFInfo
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- CN108269748A CN108269748A CN201810065217.9A CN201810065217A CN108269748A CN 108269748 A CN108269748 A CN 108269748A CN 201810065217 A CN201810065217 A CN 201810065217A CN 108269748 A CN108269748 A CN 108269748A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The detection method of wafer surface defects after a kind of CMP, the method includes：CMP processing is carried out to the light-transmissive film layer of first sample wafer and the second sample crystal column surface under preset process condition；The surface defect quantity of the first sample wafer is detected using optical check method；Impermeable light coating is coated in the second sample crystal column surface, and the surface defect quantity of the second sample wafer is detected using optical check method；Determine the incidence relation between the surface defect quantity of the second sample wafer and the first sample wafer；CMP processing is carried out to the light-transmissive film layer of crystal column surface to be detected under the preset process condition；The surface defect quantity of the wafer to be detected is detected using optical check method, and is modified according to the incidence relation, to determine the actual surface defects count of the wafer to be detected.Detection capability of the optical check board to the surface defect of the wafer after CMP can be effectively improved by the solution of the present invention.
Description
Technical field
The present invention relates to a kind of detection methods of wafer surface defects after technical field of manufacturing semiconductors more particularly to CMP.
Background technology
With the development of microelectronic technique, chemically mechanical polishing (Chemical Mechanical Polishing, abbreviation
CMP, that is, flatening process) it is increasingly becoming an important process flow in semiconductor fabrication.
But short channel isolation (Shallow Trench Isolation, alternatively referred to as abbreviation STI, shallow trench every
From) formation process in, due to deposited on surface dielectric material (generally SiO2Wait oxides) translucency, optical check
Board can not effectively verify the scratch of the crystal column surface after CMP, lead to the existing detection knot to wafer surface defects after CMP
Fruit is not allowed, and influences final device performance obtained.
Invention content
Present invention solves the technical problem that it is the inspection for how improving optical check board to the surface defect of the wafer after CMP
Output capacity.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of detection method of wafer surface defects after CMP, packet
It includes：CMP processing is carried out to the light-transmissive film layer of first sample wafer and the second sample crystal column surface under preset process condition；It uses
Optical check method detects the surface defect quantity of the first sample wafer；It is coated in the second sample crystal column surface light tight
Coating, and use the surface defect quantity of optical check method detection the second sample wafer；Determine the second sample wafer
Incidence relation between the surface defect quantity of the first sample wafer；To crystalline substance to be detected under the preset process condition
The light-transmissive film layer of circular surfaces carries out CMP processing；The surface defect quantity of the wafer to be detected is detected using optical check method, and
It is modified according to the incidence relation, to determine the actual surface defects count of the wafer to be detected.
Optionally, the first sample wafer, the second sample wafer, wafer to be detected have identical internal structure.
Optionally, the first sample wafer, the second sample wafer, wafer to be detected are obtained via the preparation of same procedure
.
Optionally, the material of the light-transmissive film layer is oxide.
Optionally, the material of the impermeable light coating is titanium nitride and/or tantalum nitride.
Optionally, the surface defect is scratches defect.
Optionally, the first sample wafer, the second sample wafer, be formed with imaging sensor in wafer to be detected.
Optionally, optical check method is completed using bright field optical check board to detect.
Optionally, the wafer to be detected is volume production wafer.
Optionally, the incidence relation between the surface defect quantity of the second sample wafer and the first sample wafer
For：The surface defect quantity of the first sample wafer and the surface defect ratio of number of the second sample wafer.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that：
The embodiment of the present invention provides a kind of detection method of wafer surface defects after CMP, including：Under preset process condition
CMP processing is carried out to the light-transmissive film layer of first sample wafer and the second sample crystal column surface；Using described in the detection of optical check method
The surface defect quantity of first sample wafer；Impermeable light coating is coated, and examine using optics in the second sample crystal column surface
Test the surface defect quantity that method detects the second sample wafer；Determine the second sample wafer and the first sample wafer
Surface defect quantity between incidence relation；Under the preset process condition to the light-transmissive film layer of crystal column surface to be detected into
Row CMP processing；Detect the surface defect quantity of the wafer to be detected using optical check method, and according to the incidence relation into
Row is corrected, to determine the actual surface defects count of the wafer to be detected.It is detected compared with existing using optical check method through CMP
The technical solution of the surface defect of wafer after process, using detection method described in the embodiment of the present invention, by determining table
Face coats the incidence relation of the surface defect quantity of the sample wafer of impermeable light coating and uncoated impermeable light coating, using light
When learning the surface defect of the wafer to be detected after detection method detection CMP, it can be estimated using the incidence relation more accurately
Surface defect quantity can effectively improve surface defects detection ability, be particularly suitable for the surface defect inspection during batch production
It surveys.
Further, the first sample wafer, the second sample wafer, wafer to be detected are obtained via the preparation of same procedure
, to ensure that identified incidence relation can suitably be applied to the wafer to be detected.
Further, the material of the impermeable light coating is titanium nitride and/or tantalum nitride, effectively light to be prevented to transmit, is carried
High optical detection is to the accuracy in detection of the surface defect of the second sample wafer.
Description of the drawings
Fig. 1 be the embodiment of the present invention a kind of CMP after wafer surface defects detection method flow chart；
Fig. 2 is the principle schematic of the typical application scenarios of the embodiment of the present invention one.
Specific embodiment
It will be appreciated by those skilled in the art that as described in the background art, it is existing to be handled based on optical detection detection through CMP process
During the surface defect of wafer afterwards, since the optical detection is the surface state of optically acquirement wafer, with shadow
As flaws such as foreign matter or pattern anomalies of the processing to detect crystal column surface, the testing result of wafer surface defects is depended on
The information such as the angle from the reflected incident light of crystal column surface, and as dielectric material (such as SiO of crystal column surface coating2Wait oxygen
Compound) have light transmission features when, incident light may penetrate the wafer, cause optical detection board can not obtain it is all should
The light of reflection, the defects of also just can not effectively detecting the scratch of crystal column surface.
In order to solve the above-mentioned technical problem, the embodiment of the present invention provides a kind of detection method of wafer surface defects after CMP,
Including：CMP processing is carried out to the light-transmissive film layer of first sample wafer and the second sample crystal column surface under preset process condition；Make
The surface defect quantity of the first sample wafer is detected with optics method of inspection；It is coated in the second sample crystal column surface impermeable
Light coating, and use the surface defect quantity of optical check method detection the second sample wafer；Determine that second sample is brilliant
The round incidence relation between the surface defect quantity of the first sample wafer；To be detected under the preset process condition
The light-transmissive film layer of crystal column surface carries out CMP processing；The surface defect quantity of the wafer to be detected is detected using optical check method,
And be modified according to the incidence relation, to determine the actual surface defects count of the wafer to be detected.
It will be appreciated by those skilled in the art that using detection method described in the embodiment of the present invention, by determining that it is impermeable that surface coats
The incidence relation of the surface defect quantity of the sample wafer of light coating and uncoated impermeable light coating is examined using optical detection
When surveying the surface defect of the wafer to be detected after CMP, more accurate surface defect number can be estimated using the incidence relation
Amount, can effectively improve surface defects detection ability, be particularly suitable for the surface defects detection during batch production.
It is understandable for above-mentioned purpose, feature and advantageous effect of the invention is enable to become apparent, below in conjunction with the accompanying drawings to this
The specific embodiment of invention is described in detail.
Fig. 1 be the embodiment of the present invention a kind of CMP after wafer surface defects detection method flow chart.Wherein, it is described
CMP is the abbreviation for chemically-mechanicapolish polishing (Chemical Mechanical Polishing), alternatively referred to as flatening process.
Specifically, in the present embodiment, the detection method may include steps of：
Step S101, under preset process condition to the light-transmissive film layer of first sample wafer and the second sample crystal column surface into
Row CMP processing.
Step S102 detects the surface defect quantity of the first sample wafer using optical check method.
Step S103 coats impermeable light coating, and use optical check method detection institute in the second sample crystal column surface
State the surface defect quantity of the second sample wafer.
Step S104 determines the pass between the surface defect quantity of the second sample wafer and the first sample wafer
Connection relationship.
Step S105 carries out CMP processing under the preset process condition to the light-transmissive film layer of crystal column surface to be detected.
Step S106 detects the surface defect quantity of the wafer to be detected using optical check method, and according to the pass
Connection relationship is modified, to determine the actual surface defects count of the wafer to be detected.
More specifically, the preset process condition can include performing when CMP process handles wafer and be used
Temperature, rotating speed, lapping liquid etc..Here wafer can include the first sample wafer, the second sample wafer and to be detected
Wafer, to ensure that detection has identical benchmark.
Further, the material of the light-transmissive film layer can be oxide.For example, silica (SiO2)。
Further, the first sample wafer, the second sample wafer, wafer to be detected can have identical internal junction
Structure.For example, it could be formed with imaging sensor in the first sample wafer, the second sample wafer, wafer to be detected.This is same
Sample may insure that detection has identical benchmark so that the incidence relation can be suitable for determining the reality of the wafer to be detected
Border surface defect quantity.
Further, the first sample wafer, the second sample wafer, wafer to be detected can also be via the work with along with
What sequence prepared.For example, three may each be the wafer by short channel isolation preparation section.Preferably, first sample
This wafer, the second sample wafer can be the wafers before volume production, such as wafer during trial production；The wafer to be detected can be
Wafer during volume production.
It will be appreciated by those skilled in the art that the wafer prepared through same procedure, surface coat light tight film layer and
The incidence relation of surface defect quantity obtained after uncoated light tight film layer through the detection of optical check method is changeless.Cause
And scheme described in the present embodiment can determine the association in test manufacture based on the first sample wafer and the second sample wafer
Relationship, the surface of wafer to be detected then obtained during volume production based on the incidence relation to use optical check method detection
Defects count is modified, so that it is determined that the actual surface defects count of the wafer to be detected.
Further, the material of the impermeable light coating can be titanium nitride (TiN) and/or tantalum nitride (TaN).Certainly,
The material that those skilled in the art can also select other and light can be prevented to project according to actual needs forms the light tight painting
Layer.
Further, the surface defect is scratches defect, alternatively, the surface defect can also be that other can pass through
The defects of optical check method detects.
It is possible to further which bright field optical check board is used to complete the detection of optical check method.Alternatively, it can also be used
His optical detection (Automatic Optic Inspection, abbreviation AOI) equipment with same or similar operation principle is complete
It is detected into the optical check method.
Further, the wafer to be detected is volume production wafer, to be used during improving volume production according to the incidence relation
Detectability when optical detection is detected the surface defect of volume production wafer.
As a non-limiting example, the surface defect number of the second sample wafer and the first sample wafer
Incidence relation between amount can be：The surface defect quantity of the first sample wafer and the surface of the second sample wafer
The ratio between defects count.
With reference to figure 2, in a typical application scenarios, before volume production (or period), same procedure can be selected
Middle two wafers (wafer) handled by CMP are respectively as the first sample wafer A and the second sample wafer B.Described
The surface of one sample wafer A and the second sample wafer B are respectively provided with light-transmissive film layer 200.
Wherein, the first sample wafer A need not carry out any extra process, can be placed directly into the bright field optics inspection
It tests and surface defects detection is carried out on board.In this application scene, it can be assumed that 1000 surface defects are detected, because carrying out
Some light may be transmitted through 200 (such as SiO of light-transmissive film layer of the first sample wafer A during optical detection2)。
On the other hand, surface is carried out the second sample wafer B is placed on the bright field optical check board 100
Before defects detection, the first impermeable light coating 300 (such as TiN) of one layer of surface spraying in the second sample wafer B is needed, then
The the second sample wafer B for coating impermeable light coating 300 is placed on the bright field optical check board 100 again and carries out surface
Defects detection.In this application scene, it can be assumed that 5000 surface defects are detected, because due to not when carrying out optical detection
The blocking of transparent coatings 300, light can not penetrate the second sample wafer B, and all light is all efficiently reflected, to wafer
Accuracy of detection higher, the testing result of surface defect are more accurate.
It should be pointed out that only show that the detection part of the bright field optical check board 100 (such as emits and connects in Fig. 2
Receive the lens of light), the other structures of the bright field optical check board 100 are not shown in FIG. 2.
Wherein, the light tight film layer 300 can be coated uniformly on the surface of the second sample wafer B, with true
Guarantor will not have an impact the testing result of surface defect.
Further, based on above-mentioned testing result twice, it may be determined that first sample wafer A and the second sample wafer B it
Between surface defect quantity incidence relation, i.e. the surface defect quantity of first sample wafer A and the second sample wafer B surface
The ratio between defects count is 1:5.
Further, in volume production, same procedure will be passed through with the first sample wafer A and the second sample wafer B
The wafer for handling and completing CMP processing is placed into as the wafer to be detected on the bright field optical check board 100
Carry out surface defects detection.The crystal column surface to be detected is also coated with the light-transmissive film layer 200, but uncoated described impermeable
Light coating 300.In this application scene, it can be assumed that the surface defect quantity for detecting the wafer to be detected is X, then base
In above-mentioned 1:5 incidence relation, it may be determined that the actual surface defects count of the wafer to be detected is 5X.
By upper, using the scheme of the present embodiment, by determining that surface coats impermeable light coating and uncoated impermeable light coating
Sample wafer surface defect quantity incidence relation, using optical detection detection CMP after wafer to be detected table
During planar defect, more accurate surface defect quantity can be estimated using the incidence relation, surface defect can be effectively improved
Detectability is particularly suitable for the surface defects detection during batch production.
Further, based on scheme described in the present embodiment, additionally it is possible to more accurately grasp process based on the incidence relation
The true surface defect information for the wafer that the process prepares.
Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (10)
1. a kind of detection method of wafer surface defects after CMP, which is characterized in that including：
CMP processing is carried out to the light-transmissive film layer of first sample wafer and the second sample crystal column surface under preset process condition；
The surface defect quantity of the first sample wafer is detected using optical check method；
Impermeable light coating is coated, and the second sample wafer is detected using optical check method in the second sample crystal column surface
Surface defect quantity；
Determine the incidence relation between the surface defect quantity of the second sample wafer and the first sample wafer；
CMP processing is carried out to the light-transmissive film layer of crystal column surface to be detected under the preset process condition；
The surface defect quantity of the wafer to be detected is detected using optical check method, and is repaiied according to the incidence relation
Just, with the actual surface defects count of the determining wafer to be detected.
2. detection method according to claim 1, which is characterized in that the first sample wafer, is treated the second sample wafer
Detecting wafer has identical internal structure.
3. detection method according to claim 1, which is characterized in that the first sample wafer, is treated the second sample wafer
Detection wafer is prepared via same procedure.
4. detection method according to claim 1, which is characterized in that the material of the light-transmissive film layer is oxide.
5. detection method according to claim 1, which is characterized in that the material of the impermeable light coating for titanium nitride and/
Or tantalum nitride.
6. detection method according to claim 1, which is characterized in that the surface defect is scratches defect.
7. detection method according to claim 1, which is characterized in that the first sample wafer, is treated the second sample wafer
Imaging sensor is formed in detection wafer.
8. detection method according to claim 1, which is characterized in that complete optical check using bright field optical check board
Method detects.
9. detection method according to claim 1, which is characterized in that the wafer to be detected is volume production wafer.
10. detection method according to any one of claim 1 to 9, which is characterized in that the second sample wafer and institute
The incidence relation stated between the surface defect quantity of first sample wafer is：
The surface defect quantity of the first sample wafer and the surface defect ratio of number of the second sample wafer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110514461A (en) * | 2019-08-29 | 2019-11-29 | 上海华力微电子有限公司 | A kind of work-table of chemicomechanical grinding mill defect inspection method |
| CN110828294A (en) * | 2018-08-14 | 2020-02-21 | 合肥晶合集成电路有限公司 | Grinding performance detection method of chemical mechanical grinding equipment |
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| CN103377960A (en) * | 2012-04-26 | 2013-10-30 | 无锡华润上华科技有限公司 | Wafer defect detection method |
| CN104062305A (en) * | 2014-07-28 | 2014-09-24 | 上海华力微电子有限公司 | Defect analysis method for integrated circuit |
| CN105247669A (en) * | 2013-05-31 | 2016-01-13 | 信越半导体株式会社 | Semiconductor wafer evaluation method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103377960A (en) * | 2012-04-26 | 2013-10-30 | 无锡华润上华科技有限公司 | Wafer defect detection method |
| CN105247669A (en) * | 2013-05-31 | 2016-01-13 | 信越半导体株式会社 | Semiconductor wafer evaluation method |
| CN104062305A (en) * | 2014-07-28 | 2014-09-24 | 上海华力微电子有限公司 | Defect analysis method for integrated circuit |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110828294A (en) * | 2018-08-14 | 2020-02-21 | 合肥晶合集成电路有限公司 | Grinding performance detection method of chemical mechanical grinding equipment |
| CN110514461A (en) * | 2019-08-29 | 2019-11-29 | 上海华力微电子有限公司 | A kind of work-table of chemicomechanical grinding mill defect inspection method |
| CN110514461B (en) * | 2019-08-29 | 2021-10-08 | 上海华力微电子有限公司 | Method for detecting defects of chemical mechanical polishing machine |
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