CN1082623A - Passivating metallic surfaces improves the method for gaseous hydride stability - Google Patents

Passivating metallic surfaces improves the method for gaseous hydride stability Download PDF

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CN1082623A
CN1082623A CN92109655A CN92109655A CN1082623A CN 1082623 A CN1082623 A CN 1082623A CN 92109655 A CN92109655 A CN 92109655A CN 92109655 A CN92109655 A CN 92109655A CN 1082623 A CN1082623 A CN 1082623A
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gas
passivator
gaseous hydride
metallic surface
hydride
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CN1039925C (en
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李耀恩
里佐斯·约翰
卡斯帕·杰哈德
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LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
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LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
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Priority to JP14071292A priority Critical patent/JP3162480B2/en
Priority to CA002070145A priority patent/CA2070145A1/en
Priority to EP92401496A priority patent/EP0517576B1/en
Priority to DE69209149T priority patent/DE69209149T2/en
Priority to KR1019920009562A priority patent/KR100227064B1/en
Application filed by LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude filed Critical LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Priority to CN92109655A priority patent/CN1039925C/en
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26DRYING
    • F26BDRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00Drying solid materials or objects by processes not involving the application of heat
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/80After-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/06Solid state diffusion of only metal elements or silicon into metallic material surfaces using gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02Pretreatment of the material to be coated
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • General Engineering & Computer Science (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Silicon Compounds (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)

Abstract

A kind of passivating metallic surfaces is to improve the method for the gas mixture stability that contains one or more low concentration gaseous hydride that contacts with it.This method comprises: a) with inert gas purge and the gas that described metallic surface contacts, remove the described gas that is purged; B) this metallic surface is exposed in the passivator of the some amount that contains effective quantity silicon, germanium, tin or plumbous gaseous hydride, its exposure duration is enough to make described metal surface passivation; C) with the described passivator of inert gas purge.

Description

Passivating metallic surfaces improves the method for gaseous hydride stability
The present invention relates to a kind of passivating metallic surfaces, improve the method for the low concentration gaseous hydride gas mixture stability contact with it.
In electronic industry, and, the stable mixed gas that contains the low concentration gaseous hydride of ppb-ppm scope there is exigence in view of the environmental protection consideration.The practice that meets rules in industry is the such gas mixture of preparation in compressed gas cylinder, and gas mixture such in gas cylinder is often long time stored.But, be difficult to make this gaseous hydride gas mixture to stablize owing to contain the gas mixture and the reaction of being equipped with between the container metallic surface of these gas mixtures of the gaseous hydride of such order of magnitude.
Overcoming this unstable and keeping an approach of constant mixture strength is to make reduce to the shortest duration of contact between lower concentration hydride and the metal vessel by the method for storing the high density gas mixture in gas cylinder, dilute immediately before use then.But unfortunately, in many cases,, also still wish long time stored this gas mixture in the metal gas cylinder if not essential.
Keeping another approach of constant lower concentration hydride mixture strength is saturated passivation.In this technology, charging into before the desirable gas mixture that contains lower concentration hydride, container is found time and with the much higher gaseous hydride inflation mutually of the same race of concentration, this circulation is carried out several times.On the basis of former research based on experiment, this process repeats several times.But this technological use is limited, because must use the identical hydride of higher concentration to make container reach desired state, is very disadvantageous and handle a large amount of toxic gases (as hydrogen arsenide) in this process.
Therefore, stablize the gaseous hydride mixture to being applicable to, avoid the needs of the passivating method of above-mentioned traditional method shortcoming still to exist.
Therefore, an object of the present invention is to provide a kind of passivating metallic surfaces, to improve the method for the gas mixture stability that contains low concentration gaseous hydride contact with it.
Another object of the present invention provides a kind of method of passivating metallic surfaces, particularly for example is used to make the passivating method that gas gas storage tank, conduit, container, pipeline, tank car storing specific equipment or rail tank car store and transport the metallic surface of car.This method helps handling any metallic surface.
Particularly, an object of the present invention is to provide a kind of method of passivating metallic surfaces, this method is particularly conducive to handles pressurized gas metal gas cylinder.
To improve the method for the stability that contains low concentration gaseous hydride gas mixture contact with it, reached above-mentioned purpose and the following content of other references clearer purpose that will become, its requirement by passivating metallic surfaces:
A) gas that contacts with described metallic surface with inert gas purge, removing the gas that is purged,
B) metallic surface is exposed in the gaseous state passivator that contains significant quantity silicon, germanium, tin or plumbous gaseous hydride of some amount, exposure duration is enough to make described metal surface passivation,
C) use inert gas purge passivator.
Fig. 1 explanation is according to schematic flow sheet of the present invention.
Fig. 2 illustrates capture time and 1ppmAsH in the 316L stainless steel tube 3Relation between the/Ar loss.
According to the present invention, provide the method for the stability of a kind of passivating metallic surfaces to improve the gaseous mixture that contains gaseous state hydride (such as arsenic hydride, hydrogen phosphide or antimonous hydride) that contacts with it.
At present, passivation is used for improving the very metallic particles of particular application and the corrosion resistance on steel surface. For example, WO 89/12887 discloses a kind of silane passivating method to metallic particles, and it can improve its corrosion resistance that tackles burning. GB2107360B discloses the silane passivating method on steel surface, to improve it under HTHP, the corrosion resistance in carbon dioxide enriched environment. But they all do not have openly or propose a kind of method of in the present invention disclosed stable gaseous mixture.
According to the present invention, any metal all can be processed, so that improves the stability of the mixture that contains low concentration gaseous hydride that contacts with it. For example, the metal surface can be metal tube, metal valve or Compressed Gas metal gas cylinder. But the metal surface of any type can be processed like this.
For example, according to the present invention, but all passivation of any metal, especially for making gas storage gas cylinder, conduit, container, pipeline and comprising railway tank car storing car and the metal of the bunkerage of any type of tank car storing special equipment. For example, various metals can be according to passivation of the present invention such as iron, steel and aluminium.
For example, the present invention is advantageously used in and processes various steel and alloy thereof, such as ferritic steel, austenitic steel, stainless steel and other ferroalloys, and is particularly advantageous in processing stainless steel. But the metal of other types also can be processed like this.
Usually, the present invention comes passivating metallic surfaces with relatively nontoxic gaseous hydride, contains the stability of the gaseous mixture of low concentration gaseous hydride with raising.
As used herein, term " relatively nontoxic gaseous hydride " comprises silication hydrogen, germanium hydrogen, tin hydrogen and leadization hydrogen. Avoid using poisonous gaseous hydride, such as arsenic hydride or hydrogen phosphide.
General formula is Si nH 2n+2Silication hydrogen particularly useful, as SiH 4, Si 2H 6And Si 6H 14But other hydride are as Ge 2H 6, Ge 9H 20, SnH 4Or pbH 4Also can use.
In following formula silication hydrogen, n is generally 1 to about 10.But, but because of the coupling of silication hydrogen, n can have higher numerical value.With reference to Advanced Inorganic Chemistry such as Cotton and Wilkinson, the third edition.
As used herein, phrase " low concentration gaseous hydride " refer to concentration for about 10ppb to the gaseous hydride of about 10ppm, be more preferably concentration and arrive about 5ppm for about 50ppb, but best be that concentration is that about 100ppb arrives about 1ppm.
According to the present invention, for passive metal, improve the stability of the gas mixture that contains low concentration gaseous hydride contact with it, at first must be with the gas or the gas mixture that contact with this metallic surface in the inert gas purge use, to remove the gas that is purged.Usually all can be used as inert purge gas at any gas of non-activity chemically.For example, so-called rare gas all can use as krypton, xenon, helium, neon and argon.But other gases such as hydrogen and nitrogen also can use.Usually, inert purge gas is by this metallic surface, and its T/A is enough to remove the gas that the overwhelming majority is purged.Generally, sweeping gas is 1 to about 3 normal atmosphere or if desired, higher with pressure down by the metallic surface, or the volume (as the compressed gas gas storage tank) that limits by the successive metallic surface, the time from several seconds until about 30 minutes.
According to the present invention, found that nitrogen is favourable as inert purge gas, although other rare gas elementes also can use.
Purge with gas that the metallic surface contacts after, this metallic surface is exposed in the some amount passivator of gaseous hydride of the silicon, germanium, tin or the lead that contain one or more significant quantities then, its time is enough to make this metal surface passivation.
Usually, the passivator concentration of use high more (as silane), required exposure duration is short more.But dense the hanging down of passivator all can be used to 1ppm or up to 100%.For example, if use very low silane concentration, exposure duration generally needs above 80 hours.Usually, for rare passivator, exposure duration is generally used about 100 hours.But if use quite pure passivator, for example the exposure duration that generally needs is less than 60 minutes, preferably less than 30 minutes.
As above-described, it is one or more silicon, germanium, tin or plumbous pure gaseous hydride that phrase " pure passivator " refers to employed passivator.
Though the passivator of any concentration all can use, the concentration that general hope is used is about 0.01-20v%.But, 0.01-5v% preferably.Use such concentration, generally the exposure duration that needs is about 1-24 hour.Usually, metallic surface (as container) is big more, and the passivator volume of use is big more.
According to the present invention, the gases that purged of the overwhelming majority are by inert gas replacement or remove.
As used herein, phrase " gas that the overwhelming majority is purged " refers to the gas that is purged and is removed more than the 99v%.
Usually, be air by the gas that purged, but according to the present invention, other gases or gas mixture (as the gas mixture of main nitrogenous and oxygen) also can be purged.
Usually, the metallic surface is exposed in the passivator and can carries out under the decomposition temperature that just is lower than one or more gaseous hydrides in the passivator in about-20 ℃ of so very low temperature.For example, the decomposition temperature of silane is 250 ℃.But, preferably under about 100 ℃ of about 10-, expose usually.More preferably carrying out passivator under about 20 to about 50 ℃ exposes.But it is best exposing under about 25 ℃.
Can at high temperature carry out though expose, the gas-phase reaction of one or more hydride (as silane) in the passivator preferably remains on bottom line, to avoid generating particle.Usually, this just means being lower than under the temperature of passivator gaseous hydride decomposition temperature and exposes.
After handled with passivator the metallic surface, the latter itself will use inert purge gas (as nitrogen) to purge.But, also can use above-mentioned rare gas.
The present invention also provides the 4th an optional step, is exposed in the oxidizing gas then in this metallic surface of this step, so that make the passivator that adsorbs on this metallic surface stable.For example, nitrogenous and gas mixture oxygen can be used as oxidizing gas.
Usually, the oxidation gas mixture that the passivator of absorption can be oxidized to the inertia oxidised form all can use.For example, the gas mixture that contains about 1-10v% oxygen in nitrogen can advantageously use, and when using the passivator of such gas mixture oxidation absorption, this metallic surface exposure duration is general with about 30 seconds to about 3 minutes.But, as needs available shorter or longer exposure durations.
In general, oxidation step can adopt with the identical temperature of passivation step and carry out, preferable be temperature from about 10 ℃ to about 100 ℃, the most preferably temperature is from 20 ℃ to about 50 ℃.
This has found that on the one hand according to the present invention, and therefore the gaseous hydride of absorption desorption very lentamente during this has reduced the effect of Passivation Treatment.Contain the passivator of the absorption of gaseous state hydride (as silane) by oxidation, for example may generate inert compound, as SiO 2Therefore, oxidation step metallic surface after a kind of stable passivation is provided, for the method for life-time service.
Fig. 1 and Fig. 2 are described now in more detail.
Fig. 1 provides a functional quality stream controller, arsenic penetration equipment and valve in stream is connected and the block diagram of multiway valve A and B.This device is convenient to be used for testing the stability of gaseous hydride, and hydride is as with induction coupled plasma spectrophotometric determination.But known other measuring methods of people of being familiar with this technical field also can use.
The stability data guide look that sample A, B that Fig. 2 explanation is determined by following embodiment and C obtain.Particularly, exposure is handled (sample C) with 1ppm after 69 hours and can not be made metal surface passivation.Usually, under low like this concentration, the exposure duration that needs surpasses 70 hours, preferably exposes 80 hours at least.
Pure silane is handled (sample B) just can reach surface passivation with interior exposing 30 minutes.Sample A is a control sample.
Usually, according to the present invention, carry out the gaseous hydride processing and make most metal surface passivation.As used herein, term " overwhelming majority " refers at least 90% metallic surface that contacts with gaseous hydride and is passivated.But more preferably at least 99% metallic surface that contacts with gaseous hydride is passivated.Particularly preferably being at least 99.9% metallic surface that contacts with gaseous hydride is passivated.
With reference now to some embodiment, further specify the present invention, these embodiment only do not plan to limit the present invention for explanation.
Embodiment
In order to prove the effect of the present invention, use the stainless steel tube of 1/4 cun internal diameter to the metallic surface.
Three identical samples (A, B and C) of the stainless steel tube of 1/4 cun internal diameter are exposed in the ambient air under the representative of conditions of preparation gas processing and bunkerage.Known under such exposure condition, the stability of gas mixture is very poor.At room temperature use all samples of exsiccant nitrogen purging then.Sample A is sample in contrast.At room temperature handle sample B then, and, purged sample C72 hour, purge with dry air subsequently with 1ppm silane by the condition of describing below with the mobile pure silane.
Hydride is tested by scheme shown in Figure 1 in sample A, B and the stability among the C of preparation like this.Stainless steel tube is inflated with the argon gas that contains the 1ppm hydrogen arsenide.This gas keeps the different time in this pipe by the valve among Fig. 22.After this, this gas is sent into and can be measured in the device of staying the hydride concentration in this gas.In this embodiment, this device is an induction coupled plasma spectrophotometer.But, also can use other determinators.Initial carbonate concentration and the ratio of ultimate density are used for representing the stability of this gas.Use the typical test of hydrogen arsenide to the results are shown in Fig. 2.
In addition, the present invention also provides the bunkerage of gas or gas mixture, and this equipment has a metallic interior surface of passivation at least.But this bunkerage can be made of metal fully.Be more preferably, this bunkerage is the pressurized gas gas storage tank.But, but also bunkerage movably of this bunkerage, as tank car storing specific equipment or rail tank car storing car.
Therefore, the invention provides the bunkerage that has a metallic interior surface that is passivated at least, thereby improved the stability of the gas mixture that contains one or more low concentration gaseous hydride that contacts with it.As used herein, the metallic interior surface that term " passivation " refers to bunkerage is handled with this deactivation method, therefore can not be stored in the reaction of gas wherein, that contain low concentration gaseous hydride or gas mixture.According to the present invention, the passivator that uses is that molecular formula is Si nH 2n+2Silication hydrogen be favourable, wherein n is about 1-10, more preferably n is 1.
Particularly preferably be, internal surface has been used the gas storage tank of gaseous hydride passivator passivation according to the present invention.
Described after the present invention, now clearly, those skilled in the art can make many changes and improvements to above-mentioned embodiment under the situation of the spirit and scope of the present invention.

Claims (14)

1, a kind of passivating metallic surfaces is with the method for the stability that improves the gas mixture that contains one or more low concentration gaseous hydride contact with it, and this method comprises:
A) with inert gas purge and the gas that described metallic surface contacts, remove the described gas that is purged;
B) this metallic surface is exposed in the passivator of the some amount that contains effective quantity silicon, germanium, tin or plumbous gaseous hydride, its exposure duration is enough to make described metal surface passivation,
C) with the described passivator of inert gas purge.
2, the process of claim 1 wherein that described metallic surface is steel, iron or aluminium.
3, the process of claim 1 wherein that described metallic surface is the compressed gas gas storage tank.
4, the process of claim 1 wherein that described gas is air.
5, the process of claim 1 wherein that described rare gas element is nitrogen, argon, krypton, xenon or neon.
6, the method for claim 1, this method also comprise, after step c), this metallic surface are exposed in oxidizing gas or the mixed oxidization gas, and its quantity and exposure duration are enough to make the passivator that adsorbs on this metallic surface stable.
7, the process of claim 1 wherein that described one or more low concentration gaseous hydride are selected from phosphuret-(t)ed hydrogen, hydrogen arsenide and stibine.
8, the process of claim 1 wherein that it is Si that described gaseous hydride passivator is selected from molecular formula nH 2n+2Silication hydrogen (wherein n is 1 to about 10), Ge 2H 6, Gr 9H 20, SnH 4, SnH 6And pbH 4
9, the method for claim 8, wherein said gaseous hydride passivator are that molecular formula is Si nH 2n+2Silication hydrogen, wherein n is 1 to about 10.
10, the method for claim 9, wherein said silication hydrogen is SiH 4
11, the passivator passivation of the gaseous hydride of the silicon, germanium, tin or the lead that contain effective quantity of a kind of bunkerage that has a metallic interior surface at least, described internal surface.
12, the bunkerage of claim 11, it is tank car storing specific equipment or rail tank car storing car.
13, the bunkerage of claim 11, it is a kind of compressed gas gas storage tank.
14, the bunkerage of claim 11, it is made up of conduit, pipeline or container.
CN92109655A 1991-06-03 1992-08-21 Process for passivating metal surfaces to enhance the stability of gaseous hydride mixtures at low concentration in contact therewith Expired - Fee Related CN1039925C (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP14071292A JP3162480B2 (en) 1991-06-03 1992-06-01 Method for passivating metal surfaces to increase the stability of low concentrations of gaseous hydrides in contact with metal surfaces
CA002070145A CA2070145A1 (en) 1991-06-03 1992-06-01 Process for passivating metal surfaces to enhance the stability of gaseous hydride mixtures at low concentration in contact therewith
EP92401496A EP0517576B1 (en) 1991-06-03 1992-06-02 Process for storing a gas mixture in passivated metal containers to enhance the stability of gaseous hydride mixtures at low concentration in contact therewith
DE69209149T DE69209149T2 (en) 1991-06-03 1992-06-02 Process for storing gas mixtures in passivated metal containers in order to increase the stability of gaseous hydride mixtures in contact with them at low concentrations
KR1019920009562A KR100227064B1 (en) 1991-06-03 1992-06-02 Process for passivating metal surfaces to enhance the stability of gaseous hydride mixtures at low concentration in contact therewith
CN92109655A CN1039925C (en) 1991-06-03 1992-08-21 Process for passivating metal surfaces to enhance the stability of gaseous hydride mixtures at low concentration in contact therewith

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Application Number Priority Date Filing Date Title
US70918391A 1991-06-03 1991-06-03
CN92109655A CN1039925C (en) 1991-06-03 1992-08-21 Process for passivating metal surfaces to enhance the stability of gaseous hydride mixtures at low concentration in contact therewith

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CN1082623A true CN1082623A (en) 1994-02-23
CN1039925C CN1039925C (en) 1998-09-23

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CN106185850A (en) * 2016-07-15 2016-12-07 合肥正帆电子材料有限公司 Electron level arsenic hydride, hydrogen phosphide and the passivation process of gas mixture steel cylinder thereof
US10767259B2 (en) 2013-07-19 2020-09-08 Agilent Technologies, Inc. Components with an atomic layer deposition coating and methods of producing the same
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US5479727A (en) 1994-10-25 1996-01-02 Air Products And Chemicals, Inc. Moisture removal and passivation of surfaces
JP4609177B2 (en) 2005-04-28 2011-01-12 チッソ株式会社 Method for extending luminescence time of calcium-binding photoprotein solution
KR20150033604A (en) * 2012-06-15 2015-04-01 프랙스에어 테크놀로지, 인코포레이티드 Cylinder preparation for maintaining stability of stored materials
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CN104294236A (en) * 2013-07-19 2015-01-21 安捷伦科技有限公司 Metal components with inert vapor phase coating on internal surfaces
US10767259B2 (en) 2013-07-19 2020-09-08 Agilent Technologies, Inc. Components with an atomic layer deposition coating and methods of producing the same
US10895009B2 (en) 2013-07-19 2021-01-19 Agilent Technologies, Inc. Metal components with inert vapor phase coating on internal surfaces
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KR930000923A (en) 1993-01-16
CA2070145A1 (en) 1992-12-04
DE69209149T2 (en) 1996-09-05
JP3162480B2 (en) 2001-04-25
EP0517576B1 (en) 1996-03-20
DE69209149D1 (en) 1996-04-25
KR100227064B1 (en) 1999-10-15
CN1039925C (en) 1998-09-23
EP0517576A1 (en) 1992-12-09
JPH05214507A (en) 1993-08-24

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