CN108258055A - Zinc indium tin oxide based thin film transistors and preparation method thereof - Google Patents
Zinc indium tin oxide based thin film transistors and preparation method thereof Download PDFInfo
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- CN108258055A CN108258055A CN201810036386.XA CN201810036386A CN108258055A CN 108258055 A CN108258055 A CN 108258055A CN 201810036386 A CN201810036386 A CN 201810036386A CN 108258055 A CN108258055 A CN 108258055A
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- 239000010409 thin film Substances 0.000 title claims abstract description 57
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 56
- 239000011701 zinc Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 claims abstract description 26
- 238000004544 sputter deposition Methods 0.000 claims abstract description 25
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000000137 annealing Methods 0.000 claims abstract description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000010408 film Substances 0.000 claims abstract description 19
- 239000001301 oxygen Substances 0.000 claims abstract description 19
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 19
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052786 argon Inorganic materials 0.000 claims abstract description 10
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims abstract description 9
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 claims abstract description 9
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000003570 air Substances 0.000 claims abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 claims description 24
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 21
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 21
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 20
- 229910052593 corundum Inorganic materials 0.000 claims description 20
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 20
- 229910052681 coesite Inorganic materials 0.000 claims description 17
- 229910052906 cristobalite Inorganic materials 0.000 claims description 17
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- 229910052682 stishovite Inorganic materials 0.000 claims description 17
- 229910052905 tridymite Inorganic materials 0.000 claims description 17
- 238000002207 thermal evaporation Methods 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 13
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- 229910007379 Zn3N2 Inorganic materials 0.000 claims description 6
- 239000013077 target material Substances 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
An embodiment of the present invention provides a kind of zinc indium tin oxide based thin film transistors production methods, a kind of transparent film transistor are made, this method includes：Substrate connects with bottom-gate or connects with source electrode and drain electrode, and insulating layer connects with grid and active layer, and insulating layer is completely attached to active layer, and active layer connects with insulating layer, source electrode and drain electrode；The insulating layer that thickness is 30~300nm is prepared, prepares the Zn that thickness is 10~50nmxInySnzO:(Lia,Nb) active layer, ZnxInySnzO:(Lia,Nb) target include ZnO, In2O3、SnO2、Li2O and Zn2N3, 0<X≤2,0<Y≤2,0<Z≤0.5,0≤a≤0.1,0≤b≤0.1 prepare active layer with magnetron sputtering method, and sputtering power is 75~200W, and oxygen/argon pressure ratio is 0~30%, and growth temperature is room temperature~300 DEG C, and annealing temperature is room temperature~350 DEG C, and annealing atmosphere is air, nitrogen or oxygen.The configuration of the present invention is simple, reasonable design solve the problems, such as that commercial thin film transistor (TFT) mobility is low and high mobility thin film transistor (TFT) preparation temperature is high.
Description
Technical field
The present invention relates to electronic information technical field more particularly to a kind of zinc indium tin oxide based thin film transistors and its systems
Make method.
Background technology
Thin film transistor (TFT) (TFT) is mainly used in the driving circuit of the New flat panel displays such as TFT-LCD, AMOLED, is
The core technology of the industry restricts the promotion of the core capabilities parameter such as its display resolution, refresh rate, size.With people
To the growing requirement of display quality and display to high-resolution, high-frequency drive, large scale, virtual reality (VR) it is fast
Speed development, it is also higher and higher to the hardware requirement of TFT, it is desirable that TFT is with mobility is big, current on/off ratio is big, high transparency, threshold value
The features such as voltage is small, manufacture craft cheap and simple.Nowadays cheap display is mostly amorphous silicon film transistor (a-Si in the market
TFT), mobility (<It is 1cm2/Vs) relatively low, it can not realize high-resolution and show at a high speed.And IGZO (indium gallium
Zinc oxide, indium gallium zinc oxide) TFT thin film transistor monitor, mobility is about 10cm2/ Vs can not meet people couple
The requirements at the higher level of display, as high-resolution, 3D display, VR are shown.
Metal oxide TFT and has been carried out numerous studies by the extensive concern of display industry researcher in recent years.Closely
TFT, the transparent TFT of these amorphous metal oxides such as SnZnO, InZnO, IGZO, AZTO and HIZO of year reported success have
Mobility height (~30cm2/Vs), some (can be prepared) for non crystalline structure with large area, and some technological temperatures are low (low cost), but
There is no a kind of above-mentioned advantage of materials combine, therefore, also need further to study, to the transparent metal of high mobility, low cost
The research of oxide TFT has very important significance to economic construction, social development and the national security of China.
Invention content
It is thin to solve the embodiment provides a kind of zinc indium tin oxide based thin film transistors and preparation method thereof
The problem of film transistor mobility is low and preparation temperature is high.
To achieve these goals, this invention takes following technical solutions：
A kind of zinc indium tin oxide based thin film transistors production method that the embodiment of the present invention provides, which is characterized in that
This method includes：
Bottom gate thin film is prepared on substrate；
The insulating layer that thickness is 30~300nm is prepared in the bottom gate thin film；Wherein
SiO is prepared with sputtering method2、HfO2、ZrO2Or Al2O3Insulating layer,
Or prepare SiO with PECVD2、HfO2、ZrO2Or Al2O3Insulating layer,
Or prepare SiO with thermal oxidation method2Insulating layer；
The Zn that thickness is 10~50nm is prepared on the insulating layerxInySnzO:(Lia,Nb) active layer；
Source electrode and drain electrode is prepared on the active layer；
Produce bottom gate thin film transistor.
Preferably, it is described to prepare bottom gate thin film on substrate, including：
On a glass substrate, the bottom gate thin film of ITO materials is prepared using magnetron sputtering method；
Or on a si substrate, the bottom gate thin film of Al materials is prepared using thermal evaporation.
Preferably, it is described that the insulating layer that thickness is 30~300nm is prepared in the bottom gate thin film；Wherein use sputtering method
Prepare SiO2、HfO2、ZrO2Or Al2O3Insulating layer or with PECVD prepare SiO2、HfO2、ZrO2Or Al2O3Insulating layer or
SiO is prepared with thermal oxidation method2Insulating layer, including：
The insulating layer uses the material preparation of high-k, by using sputtering method, PECVD or thermal oxidation method,
The uniform film of a layer thickness is prepared in the bottom gate thin film；
The insulating layer of thin-film by the bottom gate thin film uniformly, be completely covered.
Preferably, it is described to prepare the Zn that thickness is 10~50nm on the insulating layerxInySnzO:(Lia,Nb) active layer, packet
It includes：
The ZnxInySnzO:(Lia,Nb) target material includes：ZnO、In2O3、SnO2、Li2O and Zn3N2；
The ZnxInySnzO:(Lia,Nb) in,
0<X≤2,
0<Y≤2,
0<Z≤0.5,
0≤a≤0.1,
0≤b≤0.1。
Preferably, it is described to prepare the Zn that thickness is 10~50nm on the insulating layerxInySnzO:(Lia,Nb) active layer, also
Including：
Using magnetron sputtering method, by ZnxInySnzO:(Lia,Nb) target material be splashed on the insulating layer formed one layer
The film of even thickness, sputtering power are 75~200W, and oxygen/argon ratio is 0~30%, and growth temperature is room temperature~300 DEG C, and annealing is warm
It spends for room temperature~350 DEG C, annealing atmosphere is air, nitrogen or oxygen；
The active layer film is uniform, completely covers on the insulating layer.
Preferably, it is described that source electrode and drain electrode is prepared on active layer, including：
Using magnetron sputtering method, the source electrode of Ti/Au materials and the drain electrode are prepared on the active layer；
Or using thermal evaporation, the source electrode of Al/Al materials and the drain electrode are prepared on the active layer.
Preferably, the method, further includes：
Source electrode and drain electrode is prepared on substrate；
Prepare the Zn that thickness is 10~50nmxInySnzO:(Lia,Nb) active layer is complete by the source electrode and drain electrode
Covering；
The insulating layer that thickness is 30~300nm is prepared on the active layer；Wherein
SiO is prepared with sputtering method2、HfO2、ZrO2Or Al2O3Insulating layer,
Or prepare SiO with PECVD2、HfO2、ZrO2Or Al2O3Insulating layer,
Or prepare SiO with thermal oxidation method2Insulating layer；
Top-gated electrode is prepared on the active layer；
Produce top-gated electrode film transistor.
Preferably, it is described to prepare source electrode and drain electrode on substrate, including：
On a glass substrate, the source electrode of ITO materials and the drain electrode are prepared using magnetron sputtering method；
Or on a si substrate, the source electrode of Al materials and the drain electrode are prepared using thermal evaporation.
Preferably, it is described that top-gated electrode is prepared on active layer, including：
Using magnetron sputtering method, the grid of GZO materials is prepared on the active layer；
Or using magnetron sputtering method, the grid of AZO materials is prepared on the active layer；
Or using thermal evaporation, the grid of Al materials is prepared on the active layer.
A kind of zinc indium tin oxide based thin film transistors that the embodiment of the present invention provides, which is characterized in that the film is brilliant
Body pipe to be transparent, including：The bottom or top gate structure that substrate, insulating layer, active layer, source electrode, drain electrode and electrode are formed；
The substrate connects with bottom-gate or connects with the source electrode and drain electrode；The insulating layer and the grid and institute
It states active layer to connect, the insulating layer is completely attached to the active layer；The active layer and the insulating layer, source electrode and drain electrode
Connect；
The active layer is the Zn that thickness is 10~50nmxInySnzO:(Lia,Nb),
The ZnxInySnzO:(Lia,Nb) target include：ZnO、In2O3、SnO2、Li2O and Zn3N2, wherein, 0<X≤2,
0<Y≤2,0<Z≤0.5,0≤a≤0.1,0≤b≤0.1；
The insulating layer is SiO2、HfO2、ZrO2Or Al2O3, thickness is 30~300nm；
The substrate is ito glass or Si.
The embodiment of the present invention proposes a kind of zinc indium it can be seen from the technical solution provided by embodiments of the invention described above
Tin-oxide based thin film transistors and preparation method thereof, by ZnxInySnzO:(Lia,Nb) material preparation active layer, ZnxInySnzO:
(Lia,Nb) target include ZnO, In2O3、SnO2、Li2O and Zn2N3, wherein, 0<x≤2,0<y≤2,0<z≤0.5,0≤a≤
0.1,0≤b≤0.1 is prepared using magnetron sputtering method, and sputtering power is 75~200W, and oxygen/argon pressure ratio is 0~30%, raw
Long temperature is room temperature~300 DEG C, and annealing temperature is room temperature~350 DEG C, and annealing atmosphere is air, nitrogen or oxygen.The present invention's
The active layer Zn of thin film transistor (TFT)xInySnzO:(Lia,Nb) material, use SiO2Make insulating layer with high-g value, solve commercialization
The problem of thin film transistor (TFT) mobility is low and high mobility thin film transistor (TFT) preparation temperature is high.The production method that the present invention uses obtains
The zinc indium tin oxide based thin film transistors arrived are transparent, available for flat-panel monitor and transparent circuitry.
The additional aspect of the present invention and advantage will be set forth in part in the description, these will become from the following description
It obtains significantly or is recognized by the practice of the present invention.
Description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for this
For the those of ordinary skill of field, without having to pay creative labor, other are can also be obtained according to these attached drawings
Attached drawing.
Fig. 1 is a kind of process flow of zinc indium tin oxide based thin film transistors production method provided in an embodiment of the present invention
Figure one；
Fig. 2 is a kind of process flow of zinc indium tin oxide based thin film transistors production method provided in an embodiment of the present invention
Figure two；
Fig. 3 is a kind of transfer characteristic curve of zinc indium tin oxide based thin film transistors provided in an embodiment of the present invention；
Fig. 4 is a kind of output characteristic curve of zinc indium tin oxide based thin film transistors provided in an embodiment of the present invention.
Specific embodiment
Embodiments of the present invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning
Same or similar element is represented to same or similar label eventually or there is the element of same or like function.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and is only used for explaining the present invention, and is not construed as limiting the claims.
Those skilled in the art of the present technique are appreciated that unless expressly stated, singulative " one " used herein, " one
It is a ", " described " and "the" may also comprise plural form.It is to be further understood that is used in the specification of the present invention arranges
Diction " comprising " refers to there are the feature, integer, step, operation, element and/or component, but it is not excluded that presence or addition
Other one or more features, integer, step, operation, element, component and/or their group.It should be understood that when we claim member
Part is " connected " or during " coupled " to another element, it can be directly connected or coupled to other elements or there may also be
Intermediary element.In addition, " connection " used herein or " coupling " can include wireless connection or coupling.Wording used herein
"and/or" includes any cell of one or more associated list items and all combines.
Those skilled in the art of the present technique are appreciated that unless otherwise defined all terms used herein are (including technology art
Language and scientific terminology) there is the meaning identical with the general understanding of the those of ordinary skill in fields of the present invention.Should also
Understand, those terms such as defined in the general dictionary, which should be understood that, to be had and the meaning in the context of the prior art
The consistent meaning of justice, and unless defined as here, will not be with idealizing or the meaning of too formal be explained.
For ease of the understanding to the embodiment of the present invention, done further by taking several specific embodiments as an example below in conjunction with attached drawing
Explanation, and each embodiment does not form the restriction to the embodiment of the present invention.
Embodiment one
An embodiment of the present invention provides a kind of zinc indium tin oxide based thin film transistors and preparation method thereof, by
ZnxInySnzO:(Lia,Nb) material preparation active layer, use SiO2Make insulating layer with high-g value, obtain transparent thin film transistor (TFT).
Solve the problems, such as that commercial thin film transistor (TFT) mobility is low and high mobility thin film transistor (TFT) preparation temperature is high.
An aspect of of the present present invention provides a kind of zinc indium tin oxide based thin film transistors production method.
A kind of process flow such as Fig. 1 of zinc indium tin oxide based thin film transistors production method provided in an embodiment of the present invention
It is shown, including following processing step：
Step S110：Bottom gate thin film is prepared on substrate.
On a glass substrate, the bottom gate thin film of ITO materials is prepared using magnetron sputtering method；
Or on a si substrate, the bottom gate thin film of Al materials is prepared using thermal evaporation.
Step S120：The insulating layer that thickness is 30~300nm is prepared in bottom gate thin film, wherein being prepared with sputtering method
SiO2、HfO2、ZrO2Or Al2O3Insulating layer prepares SiO with PECVD2、HfO2、ZrO2Or Al2O3Insulating layer or with hot oxygen
Change method prepares SiO2Insulating layer.
The insulating layer uses the material preparation of high-k, by using sputtering method, PECVD or thermal oxidation method,
The uniform film of a layer thickness is prepared in the bottom gate thin film；The insulating layer of thin-film is uniform, complete by the bottom gate thin film
Covering.
Step S130：The Zn that thickness is 10~50nm is prepared on the insulating layerxInySnzO:(Lia,Nb) active layer.
The ZnxInySnzO:(Lia,Nb) target material includes：ZnO、In2O3、SnO2、Li2O and Zn3N2。
The ZnxInySnzO:(Lia,Nb) in,
0<X≤2,
0<Y≤2,
0<Z≤0.5,
0≤a≤0.1,
0≤b≤0.1。
Using magnetron sputtering method, by ZnxInySnzO:(Lia,Nb) target material be splashed on the insulating layer formed one layer
The film of even thickness, sputtering power are 75~200W, and oxygen/argon ratio is 0~30%, and growth temperature is room temperature~300 DEG C, and annealing is warm
It spends for room temperature~350 DEG C, annealing atmosphere is air, nitrogen or oxygen.
The active layer film is uniform, completely covers on the insulating layer.
Step S140：Source electrode and drain electrode is prepared on active layer.
Using magnetron sputtering method, the source electrode of Ti/Au materials and the drain electrode are prepared on the active layer；Or it uses
Thermal evaporation prepares the source electrode of Al/Al materials and the drain electrode on the active layer.
The embodiment of the present invention additionally provides a kind of process flow of zinc indium tin oxide based thin film transistors production method such as
Shown in Fig. 2, including following processing step：
Step S210：Source electrode and drain electrode is prepared on substrate.
On a glass substrate, the source electrode of ITO materials and the drain electrode are prepared using magnetron sputtering method；Or in Si substrates
On, the source electrode of Al materials and the drain electrode are prepared using thermal evaporation.
Step S220：Prepare the Zn that thickness is 10~50nmxInySnzO:(Lia,Nb) active layer is complete by source electrode and drain electrode
Covering.
Step S230：The insulating layer that thickness is 30~300nm is prepared on active layer；Wherein SiO is prepared with sputtering method2、
HfO2、ZrO2Or Al2O3Insulating layer prepares SiO with PECVD2、HfO2、ZrO2Or Al2O3Insulating layer or with thermal oxide legal system
Standby SiO2Insulating layer.
Step S240：Top-gated electrode is prepared on active layer.
Using magnetron sputtering method, the grid of GZO materials is prepared on the active layer；Or using magnetron sputtering method,
The grid of AZO materials is prepared on the active layer；Or using thermal evaporation, Al materials are prepared on the active layer
The grid.
Another aspect of the present invention provides a kind of zinc indium tin oxide based thin film transistors.
A kind of zinc indium tin oxide based thin film transistors provided in an embodiment of the present invention to be transparent, including：Substrate, insulation
The bottom or top gate structure that layer, active layer, source electrode, drain electrode and electrode are formed.
The substrate connects with bottom-gate or connects with the source electrode and drain electrode；The insulating layer and the grid and institute
It states active layer to connect, the insulating layer is completely attached to the active layer；The active layer and the insulating layer, source electrode and drain electrode
Connect.
The active layer is the Zn that thickness is 10~50nmxInySnzO:(Lia,Nb)。
The ZnxInySnzO:(Lia,Nb) target include：ZnO、In2O3、SnO2、Li2O and Zn3N2, wherein, 0<X≤2,
0<Y≤2,0<Z≤0.5,0≤a≤0.1,0≤b≤0.1.
The insulating layer is SiO2、HfO2、ZrO2Or Al2O3, thickness is 30~300nm；
The substrate is ito glass or Si.
Embodiment two
This embodiment offers a kind of zinc indium tin oxide based thin film transistors production methods, and specific implementation step is such as
Under：
Step 1：ITO bottom-gates are prepared on a glass substrate.
Step 2：Insulating layer is prepared on the electrode prepared in step 1, growth insulating layer is HfO2, thickness 30nm.
Step 3：Zn is prepared with magnetron sputtering methodxInySnzO:(Lia,Nb) active layer, thickness 10nm, x=0.1, y=
2, z=0.01, a=0.1, b=0, sputtering power 75W, oxygen/argon pressure ratio are 30%, and growth temperature is room temperature, unannealed.
Step 4：Ti/Au source electrode and drain electrodes are prepared with magnetron sputtering method.
Produce ITO/HfO2/ZnxInySnzO:(Lia,NbThe zinc indium tin oxide base film of)/Ti/Au bottom gate configurations
Transistor.
Embodiment three
This embodiment offers a kind of zinc indium tin oxide based thin film transistors production methods, and specific implementation step is such as
Under：
Step 1：On a si substrate, SiO is prepared with thermal oxidation method2Insulating layer, thickness 200nm.
Step 2：On SiO2 insulating layers Zn is prepared with magnetron sputtering methodxInySnzO:(Lia,Nb) active layer, thickness is
20nm, x=1, y=1.1, z=0.1, a=0.01, b=0, sputtering power 100W, oxygen/argon pressure ratio are 0%, and growth temperature is
Room temperature, annealing temperature are 320 DEG C, and annealing atmosphere is nitrogen.
Step 3：Al source electrodes, drain electrode and bottom-gate are prepared with thermal evaporation.
Produce Al/Si/SiO2/ZnxInySnzO:(Lia,NbThe zinc indium tin oxide base film of)/Al bottom gate configurations is brilliant
Body pipe.
The Zn made by above-mentioned production method twoxInySnzO:(Lia,Nb) thin film transistor (TFT), transfer characteristic curve such as Fig. 3
Shown, as seen from Figure 3, on-off ratio is up to 3.5 × 107, mobility 45.0cm2/Vs.Its output characteristic curve such as Fig. 4 institutes
Show.
Example IV
This embodiment offers a kind of zinc indium tin oxide based thin film transistors production methods, and specific implementation step is such as
Under：
Step 1：ITO source electrode and drain electrodes are prepared on a glass substrate.
Step 2：Zn is prepared with magnetron sputtering methodxInySnzO:(Lia,Nb) active layer, thickness 50nm, x=2, y=
0.1, z=0.5, a=0, b=0.1, sputtering power 200W, oxygen argon pressure ratio are 10%, and growth temperature is room temperature, and annealing temperature is
350 DEG C, annealing atmosphere oxygen.
Step 3：Insulating layer Al is prepared with sputtering method2O3, thickness 300nm.
Step 4：GZO grids are prepared with magnetron sputtering.
Produce ITO/ZnxInySnzO:(Lia,Nb)/Al2O3/ GZO pushes up the thin film transistor (TFT) of gate structure.
Embodiment five
This embodiment offers a kind of zinc indium tin oxide based thin film transistors production methods, and specific implementation step is such as
Under：
Step 1：ITO source-drain electrodes are prepared on a glass substrate.
Step 2：Insulating layer ZrO is prepared with sputtering2, thickness 150nm.
Step 3：Zn is prepared with magnetron sputtering methodxInySnzO:(Lia,Nb) active layer, thickness 35nm, x=1, y=
0.9, z=0.3, a=0.01, b=0, sputtering power 100W, oxygen argon pressure ratio are 0%, and growth temperature is 100 DEG C, and annealing temperature is
200 DEG C, annealing atmosphere oxygen.
Step 4：With magnetron sputtering AZO grids.
Produce ITO/ZrO2/ZnxInySnzO:(Lia,Nb)/AZO pushes up the thin film transistor (TFT) of gate structure.
Embodiment six
This embodiment offers a kind of zinc indium tin oxide based thin film transistors production methods, and specific implementation step is such as
Under：
Step 1：On a si substrate, SiO is prepared with thermal oxidation method2Insulating layer, thickness 200nm.
Step 2：In SiO2On insulating layer Zn is prepared with magnetron sputtering methodxInySnzO:(Lia,Nb) active layer, thickness is
20nm, x=1, y=1.1, z=0.1, a=0, b=0.01, sputtering power 100W, oxygen/argon pressure ratio are 0%, and growth temperature is
Room temperature, annealing temperature are 275 DEG C, and annealing atmosphere is air.
Step 3：Al source electrodes, drain electrode and bottom-gate are prepared with thermal evaporation.
Produce Al/Si/SiO2/ZnxInySnzO:(Lia,NbThe zinc indium tin oxide base film of)/Al bottom gate configurations is brilliant
Body pipe.
Embodiment seven
This embodiment offers a kind of zinc indium tin oxide based thin film transistors production methods, and specific implementation step is such as
Under：
Step 1：ITO bottom-gates are prepared on a glass substrate.
Step 2：In the bottom-gate prepared in step 1 SiO is prepared with PECVD2Insulating layer, thickness 150nm.
Step 3：Zn is prepared with magnetron sputtering methodxInySnzO:(Lia,Nb) active layer, thickness 30nm, x=1, y=
1.1, z=0.2, a=0.01, b=0.01, sputtering power 100W, oxygen/argon pressure ratio are 0%, and growth temperature is 200 DEG C, is not moved back
Fire.
Step 4：Ti/Au source electrode and drain electrodes are prepared with magnetron sputtering method.
Produce ITO/SiO2/ZnxInySnzO:(Lia,NbThe zinc indium tin oxide base film of)/Ti/Au bottom gate configurations
Transistor.
In conclusion the embodiment of the present invention is by designing a kind of zinc indium tin oxide based thin film transistors production method, by
ZnxInySnzO:(Lia,Nb) material preparation active layer, ZnxInySnzO:(Lia,Nb) target include ZnO, In2O3、SnO2、Li2O and
Zn2N3, wherein, 0<x≤2,0<y≤2,0<Z≤0.5,0≤a≤0.1,0≤b≤0.1 are prepared using magnetron sputtering method,
Sputtering power be 75~200W, oxygen/argon pressure ratio be 0~30%, growth temperature be room temperature~300 DEG C, annealing temperature for room temperature~
350 DEG C, annealing atmosphere is air, nitrogen or oxygen.The active layer Zn of the thin film transistor (TFT) of the present inventionxInySnzO:(Lia,Nb)
Material uses SiO2Make insulating layer with high-g value, solve that commercial thin film transistor (TFT) mobility is low and high mobility thin film transistor (TFT)
The problem of preparation temperature is high.The zinc indium tin oxide based thin film transistors that the production method that the present invention uses obtains to be transparent,
Available for flat-panel monitor and transparent circuitry.
One of ordinary skill in the art will appreciate that：Attached drawing is the schematic diagram of one embodiment, module in attached drawing or
Flow is not necessarily implemented necessary to the present invention.
Each embodiment in this specification is described by the way of progressive, identical similar portion between each embodiment
Point just to refer each other, and the highlights of each of the examples are difference from other examples.Especially for device or
For system embodiment, since it is substantially similar to embodiment of the method, so describing fairly simple, related part is referring to method
The part explanation of embodiment.Apparatus and system embodiment described above is only schematical, wherein the conduct
The unit that separating component illustrates may or may not be it is physically separate, the component shown as unit can be or
Person may not be physical unit, you can be located at a place or can also be distributed in multiple network element.It can root
Factually border needs to select some or all of module therein realize the purpose of this embodiment scheme.Ordinary skill
Personnel are without creative efforts, you can to understand and implement.
The foregoing is only a preferred embodiment of the present invention, but protection scope of the present invention be not limited thereto,
Any one skilled in the art in the technical scope disclosed by the present invention, the change or replacement that can be readily occurred in,
It should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with scope of the claims
Subject to.
Claims (10)
1. a kind of zinc indium tin oxide based thin film transistors production method, which is characterized in that this method includes：
Bottom gate thin film is prepared on substrate；
The insulating layer that thickness is 30~300nm is prepared in the bottom gate thin film；Wherein
SiO is prepared with sputtering method2、HfO2、ZrO2Or Al2O3Insulating layer,
Or prepare SiO with PECVD2、HfO2、ZrO2Or Al2O3Insulating layer,
Or prepare SiO with thermal oxidation method2Insulating layer；
The Zn that thickness is 10~50nm is prepared on the insulating layerxInySnzO:(Lia,Nb) active layer；
Source electrode and drain electrode is prepared on the active layer；
Produce bottom gate thin film transistor.
2. zinc indium tin oxide based thin film transistors according to claim 1 and preparation method thereof, which is characterized in that described
Prepare bottom gate thin film on substrate, including：
On a glass substrate, the bottom gate thin film of ITO materials is prepared using magnetron sputtering method；
Or on a si substrate, the bottom gate thin film of Al materials is prepared using thermal evaporation.
3. zinc indium tin oxide based thin film transistors production method according to claim 1, which is characterized in that it is described
The insulating layer that thickness is 30~300nm is prepared in the bottom gate thin film；Wherein SiO is prepared with sputtering method2、HfO2、ZrO2Or Al2O3
Insulating layer or with PECVD prepare SiO2、HfO2、
ZrO2Or Al2O3Insulating layer prepares SiO with thermal oxidation method2Insulating layer, including：
The insulating layer uses the material preparation of high-k, by using sputtering method, PECVD or thermal oxidation method, in institute
State the preparation uniform film of a layer thickness in bottom gate thin film；
The insulating layer of thin-film by the bottom gate thin film uniformly, be completely covered.
4. zinc indium tin oxide based thin film transistors production method according to claim 1, which is characterized in that it is described
The Zn that thickness is 10~50nm is prepared on insulating layerxInySnzO:(Lia,Nb) active layer, including：
The ZnxInySnzO:(Lia,Nb) target material includes：ZnO、In2O3、SnO2、Li2O and Zn3N2；
The ZnxInySnzO:(Lia,Nb) in,
0<X≤2,
0<Y≤2,
0<Z≤0.5,
0≤a≤0.1,
0≤b≤0.1。
5. zinc indium tin oxide based thin film transistors production method according to claim 4, which is characterized in that it is described
The Zn that thickness is 10~50nm is prepared on insulating layerxInySnzO:(Lia,Nb) active layer, it further includes：
Using magnetron sputtering method, by ZnxInySnzO:(Lia,Nb) target material be splashed on the insulating layer formed it is one layer uniformly thick
The film of degree, sputtering power are 75~200W, and oxygen/argon ratio is 0~30%, and growth temperature is room temperature~300 DEG C, and annealing temperature is
Room temperature~350 DEG C, annealing atmosphere are air, nitrogen or oxygen；
The active layer film is uniform, completely covers on the insulating layer.
6. zinc indium tin oxide based thin film transistors production method according to claim 1, which is characterized in that it is described
Source electrode and drain electrode is prepared on active layer, including：
Using magnetron sputtering method, the source electrode of Ti/Au materials and the drain electrode are prepared on the active layer；
Or using thermal evaporation, the source electrode of Al/Al materials and the drain electrode are prepared on the active layer.
7. zinc indium tin oxide based thin film transistors production method according to claim 1, which is characterized in that the side
Method further includes：
Source electrode and drain electrode is prepared on substrate；
Prepare the Zn that thickness is 10~50nmxInySnzO:(Lia,Nb) source electrode and drain electrode is completely covered active layer；
The insulating layer that thickness is 30~300nm is prepared on the active layer；Wherein
SiO is prepared with sputtering method2、HfO2、ZrO2Or Al2O3Insulating layer,
Or prepare SiO with PECVD2、HfO2、ZrO2Or Al2O3Insulating layer,
Or prepare SiO with thermal oxidation method2Insulating layer；
Top-gated electrode is prepared on the active layer；
Produce top-gated electrode film transistor.
8. zinc indium tin oxide based thin film transistors production method according to claim 7, which is characterized in that it is described
Source electrode and drain electrode is prepared on substrate, including：
On a glass substrate, the source electrode of ITO materials and the drain electrode are prepared using magnetron sputtering method；
Or on a si substrate, the source electrode of Al materials and the drain electrode are prepared using thermal evaporation.
9. zinc indium tin oxide based thin film transistors production method according to claim 7, which is characterized in that it is described
Top-gated electrode is prepared on active layer, including：
Using magnetron sputtering method, the grid of GZO materials is prepared on the active layer；
Or using magnetron sputtering method, the grid of AZO materials is prepared on the active layer；
Or using thermal evaporation, the grid of Al materials is prepared on the active layer.
10. a kind of zinc indium tin oxide based thin film transistors, which is characterized in that based on claim 1-9 any one of them sides
Method, the thin film transistor (TFT) to be transparent, including：The bottom or top-gated that substrate, insulating layer, active layer, source electrode, drain electrode and electrode are formed
Pole structure；
The substrate connects with bottom-gate or connects with the source electrode and drain electrode；The insulating layer and the grid and described have
Active layer connects, and the insulating layer is completely attached to the active layer；The active layer and the insulating layer, source electrode and drain electrode phase
It connects；
The active layer is the Zn that thickness is 10~50nmxInySnzO:(Lia,Nb),
The ZnxInySnzO:(Lia,Nb) target include：ZnO、In2O3、SnO2、Li2O and Zn3N2, wherein, 0<X≤2,0<y
≤ 2,0<Z≤0.5,0≤a≤0.1,0≤b≤0.1；
The insulating layer is SiO2、HfO2、ZrO2Or Al2O3, thickness is 30~300nm；
The substrate is ito glass or Si.
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