CN103258859A - Indium oxide thin film transistor and manufacturing method thereof - Google Patents

Indium oxide thin film transistor and manufacturing method thereof Download PDF

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CN103258859A
CN103258859A CN2013101950825A CN201310195082A CN103258859A CN 103258859 A CN103258859 A CN 103258859A CN 2013101950825 A CN2013101950825 A CN 2013101950825A CN 201310195082 A CN201310195082 A CN 201310195082A CN 103258859 A CN103258859 A CN 103258859A
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film transistor
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indium oxide
sio
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CN103258859B (en
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张希清
李彬
王海龙
周东站
彭云飞
高耸
衣立新
王永生
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Beijing Jiaotong University
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Beijing Jiaotong University
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Abstract

The invention provides an indium oxide thin film transistor and a manufacturing method thereof, and relates to a transparent thin film transistor. The problem that the mobility of the thin film transistor is low is solved. A channel layer of the thin film transistor is InZnxLiyNzO, a target of the InZnxLiyNzO comprises In2O3, ZnO, Li2O and Zn3N2, x is between 0 and 2 y is between 0 and 0.1, Z is equal to 0-0.1, and the thickness is 20-60nm. A magnetron sputtering method is used for manufacturing the channel layer, the sputtering power is 70-200W, the pressure ratio of oxygen and argon is 0-40%, a growing temperature is the room temperature to 500 DEG C, and a annealing temperature is 350-500 DEG C or 760-960 DEG C. The indium oxide thin film transistor is mainly used for panel display and transparent circuits.

Description

A kind of indium oxide base film transistor and preparation method thereof
Technical field
The invention belongs to electronic information field, relate to a kind of indium oxide base film transistor, mainly for generation of thin-film transistor low-cost, high mobility.
Background technology
Thin-film transistor (TFT) has in fields such as information demonstration, transparent circuitry widely to be used.High performance thin film transistor (TFT) backplane technology is basic technology and the core technology that novel flat-plates such as TFT-LCD, AMOLED show industry, also is the general character key technology of this industry, is to improve the quality of products, the important step that reduces production costs.Along with modern displays to high-resolution, ultra high-definition, at a high speed, the fast development that shows of high frequency drive circuit, large scale, 3D and big capacity, requirement to TFT is more and more higher, requires that TFT has that mobility is big, current on/off ratio is big, aperture opening ratio is big, threshold voltage shift is little, preparation technology's cheap and simple, large-area manufacturing and characteristics such as integrated easily.Existing amorphous silicon film transistor (a-Si TFT) is because the lower (0.5cm of its mobility 2/ Vs), can't realize high-resolution and demonstration at a high speed, more and more can not satisfy the demand in market.
Metal oxide TFT is the industry new technique paying close attention to and obtain greatly developing extremely in recent years.Reported a-IGZO TFT, a-IZO TFT, a-ZTO TFT, a-HIZO TFT and the ZLO TFT of successful development recently, the transparent TFT of these non-crystal oxides compares with a-Si TFT has the big (〉 10cm of mobility 2/ Vs), lower, the preparation technology's cheap and simple of visible transparent, aperture opening ratio height, growth temperature, large-area manufacturing, advantages of environment protection easily, thereby become research focus in the electronics.
Although the research to metal oxide TFT has obtained significant progress, its mobility both at home and abroad〉10cm 2/ Vs, bigger at least 20 times than a-Si TFT, but still do not satisfy the requirement of displays such as 3D, mobility remains further to be improved.The research of the oxidic transparent TFT of high mobility will have very important significance to economic construction, social development and the national security of China.
Summary of the invention
Technical problem to be solved by this invention is to solve the low problem of thin-film transistor mobility.Provide a kind of indium oxide base film transistorized manufacture method.
The present invention solves the technical scheme of its technical problem:
A kind of indium oxide base film transistor, this thin-film transistor comprise the end or the top grid structure that substrate, insulating barrier, channel layer, protection passivation layer, grid, source electrode and drain electrode etc. constitute.
Described channel layer is InZn xLi yN zO;
InZn xLi yN zThe target of O comprises In 2O 3, ZnO, Li 2O and Zn 3N 2, x=0～2, y=0～0.1, Z=0～0.1, thickness is 20～60nm.
Described insulating barrier is SiO 2, HfO 2, ZrO 2Or Al 2O 3, thickness is 60～300nm.
A kind of indium oxide base film transistor fabrication method, the step of this method comprises:
Step 1 prepares hearth electrode at substrate, puts into magnetron sputtering then, carries out preliminary treatment;
Step 2 prepares insulating barrier at the hearth electrode of step 1 preparation, and its thickness is 60～300nm;
Prepare SiO with sputtering method 2, HfO 2, ZrO 2Or Al 2O 3Insulating barrier, its power is 70～200W, oxygen/argon pressure ratio is 0～40%, growth temperature is room temperature～500 ℃;
Or be equipped with SiO with the PECVD legal system 2, HfO 2, ZrO 2Or Al 2O 3Insulating barrier;
Or prepare SiO with thermal oxidation method 2Insulating barrier;
Step 3 prepares channel layer
Step 4 prepares SiO with magnetron sputtering method 2Or Al 2O 3, thickness is the protection passivation layer of 0～300nm;
Or be equipped with SiO with the PECVD legal system 2Or Al 2O 3The protection passivation layer;
Step 5 prepares electrode with magnetron sputtering method or thermal evaporation, produces thin-film transistor;
Described step 3 prepares channel layer;
Channel layer materials adopts InZn xLi yN zDuring O, prepare InZn with magnetron sputtering method xLi yN zThe channel layer of O, thickness are 20～60nm, x=0～2, and y=0～0.1, Z=0～0.1, sputtering power is 70～200W, and oxygen/argon pressure ratio is 0～40%, and growth temperature is room temperature～500 ℃, and annealing temperature is 350～500 ℃, annealing temperature is 760～960 ℃;
Beneficial effect of the present invention:
The channel layer InZn of thin-film transistor of the present invention xLi yN zThe O material is used SiO 2Make insulating barrier with high k material, solved the low problem of thin-film transistor mobility, produce InZn xLi yN zThe O thin-film transistor, its manufacture craft is simple, cost is low.
Description of drawings
Fig. 1 is InZn xLi yN zThe output characteristic curve of O thin-film transistor.
Fig. 2 is InZn xLi yN zThe transfer characteristic curve of O thin-film transistor.
Embodiment
A kind of indium oxide base film transistor, this thin-film transistor comprise the end or the top grid structure that substrate, insulating barrier, channel layer, protection passivation layer and electrode constitute.
Described channel layer is InZn xLi yN zO.
InZn xLi yN zThe target of O comprises In 2O 3, ZnO, Li 2O and Zn 3N 2, x=0～2, y=0～0.1, Z=0～0.1, thickness is 20～60nm;
Described insulating barrier is SiO 2, HfO 2, ZrO 2Or Al 2O 3, thickness is 60～300nm.
Described protection passivation layer is SiO 2Or Al 2O 3, thickness is 0～300nm.
Described substrate is ito glass or Si.
A kind of indium oxide base film transistor fabrication method one, the step of this manufacture method comprises:
Step 1 is put into magnetron sputtering then in glass substrate preparation ITO bottom-gate, carries out preliminary treatment;
Step 2 prepares insulating barrier in the bottom-gate of step 1 preparation, uses sputtering power 70W, and oxygen argon pressure ratio is 40%, and growth temperature is under 500 ℃, and the growth insulating barrier is HfO 2, thickness is 60nm;
Step 3 prepares InZn with magnetron sputtering method xLi yN zO channel layer, thickness are 20nm, x=2, and y=0.1, Z=0.1, sputtering power are 70W, and oxygen/argon pressure ratio is 40%, and growth temperature is 500 ℃, and annealing temperature is 960 ℃;
Step 4 prepares Al with magnetron sputtering method 2O 3, thickness is the protection passivation layer of 100nm.
Step 5 prepares Ti/Au source electrode and drain electrode with magnetron sputtering method, and thickness is 100nm;
Produce ITO/HfO 2/ InZn xLi yN zO/Al 2O 3The indium oxide base film transistor of/Ti/Au bottom-gate structure.
A kind of indium oxide base film transistor fabrication method two, the step of this manufacture method comprises:
Step 1 prepares SiO with thermal oxidation method on the Si substrate 2Insulating barrier, its thickness are 300nm;
Step 2 is put into magnetron sputtering at the insulating barrier that step 1 Si substrate prepares, and carries out preliminary treatment;
Step 3 prepares InZn with magnetron sputtering method on insulating barrier xLi yN zO channel layer, thickness are 30nm, x=1, and y=0.01, Z=0, sputtering power are 100W, and oxygen/argon pressure ratio is 0%, and growth temperature is room temperature, and annealing temperature is 900 ℃;
Step 4 prepared by heat evaporation Al source electrode, drain electrode and bottom-gate, thickness is about 150nm;
Produce Al/Si/SiO 2/ InZn xLi yN zThe indium oxide base film transistor of O/Al bottom-gate structure.
InZn by above-mentioned manufacture method two making xLi yN zThe O thin-film transistor, its transfer characteristic curve as shown in Figure 1.As seen from Figure 1, on-off ratio reaches 4.1*10 7Its output characteristic curve as shown in Figure 2, getting mobility by Fig. 2 is 51.8cm 2/ Vs.
A kind of indium oxide base film transistor fabrication method three, the step of this manufacture method comprises:
Step 1 is put into magnetron sputtering then in glass substrate preparation ITO source electrode and drain electrode, carries out preliminary treatment;
Step 2 prepares InZn with magnetron sputtering method xLi yN zO channel layer, thickness are 60nm, x=1, and y=0, Z=0.01 sputtering power 200W, oxygen argon pressure ratio is 20%, and growth temperature is 450 ℃, and annealing temperature is 830 ℃;
Step 3 sputtering power 200W, oxygen argon pressure ratio is 0%, and growth temperature is under 200 ℃, and the growth insulating barrier is Al 2O 3, thickness is 80nm;
Step 4 magnetron sputtering GZO grid, thickness is 300nm;
Produce ITO/InZn xLi yN zO/Al 2O 3The thin-film transistor of/GZO top grid structure.
A kind of indium oxide base film transistor fabrication method four, the step of this manufacture method comprises:
Step 1 is put into magnetron sputtering then in glass substrate preparation ITO bottom-gate, carries out preliminary treatment;
Step 2 sputtering power 150W, oxygen argon pressure ratio is 10%, and growth temperature is 350 ℃, and the growth insulating barrier is ZrO 2, thickness is 150nm;
Step 3 prepares InZn with magnetron sputtering method xLi yN zO channel layer, thickness are 35nm, x=0, and y=0.01, Z=0.01, sputtering power 150W, oxygen argon pressure ratio is 0%, and growth temperature is 400 ℃, and annealing temperature is 760 ℃;
Step 4 prepares SiO with magnetron sputtering method 2, thickness is the protection passivation layer of 300nm.
Step 5 magnetron sputtering GZO grid, thickness is 200nm;
Produce ITO/ZrO 2/ InZn xLi yN zO/SiO 2The thin-film transistor of/GZO top grid structure.
A kind of indium oxide base film transistor fabrication method five, the step of this manufacture method comprises:
Step 1 is put into magnetron sputtering then in glass substrate preparation ITO bottom-gate, carries out preliminary treatment;
Step 2 prepares insulating barrier in the bottom-gate of step 1 preparation, uses sputtering power 200W, and oxygen argon pressure ratio is 0%, and growth temperature is under the room temperature, and the growth insulating barrier is ZrO 2, thickness is 70nm;
Step 3 prepares InZn with magnetron sputtering method xLi yN zO channel layer, thickness are 20nm, x=0.5, and y=0, Z=0.01, sputtering power are 70W, and oxygen/argon pressure ratio is 40%, and growth temperature is 200 ℃, and annealing temperature is 500 ℃
Step 4 prepares SiO with PECVD 2, thickness is the protection passivation layer of 300nm.
Step 5 prepares Ti/Au source electrode and drain electrode with magnetron sputtering method, and thickness is 100nm;
Produce ITO/ZrO 2/ InZn xLi yN zO/SiO 2The indium oxide base film transistor of/Ti/Au bottom-gate structure.
A kind of indium oxide base film transistor fabrication method six, the step of this manufacture method comprises:
Step 1 is put into magnetron sputtering then in glass substrate preparation ITO bottom-gate, carries out preliminary treatment;
Step 2 prepares SiO with PECVD on the bottom-gate of step 1 preparation 2Insulating barrier, thickness are 150nm;
Step 3 prepares InZn with magnetron sputtering method xLi yN zO channel layer, thickness are 30nm, x=0.5, and y=0.01, Z=0, sputtering power are 100W, and oxygen/argon pressure ratio is 0%, and growth temperature is 100 ℃, and annealing temperature is 450 ℃.
Step 4 prepares Al with magnetron sputtering method 2O 3, thickness is the protection passivation layer of 200nm.
Step 5 prepares Ti/Au source electrode and drain electrode with magnetron sputtering method, and thickness is 150nm;
Produce ITO/SiO 2/ InZn xLi yN zO/Al 2O 3The indium oxide base film transistor of/Ti/Au bottom-gate structure.
A kind of indium oxide base film transistor fabrication method seven, the step of this manufacture method comprises:
Step 1 is put into magnetron sputtering then in glass substrate preparation ITO source electrode and drain electrode, carries out preliminary treatment;
Step 2 prepares InZn with magnetron sputtering method xLi yN zO channel layer, thickness are 60nm, x=0.5, and y=0.01, Z=0.01, sputtering power are 100W, and oxygen/argon pressure ratio is 0%, and growth temperature is 350 ℃, and annealing temperature is 350 ℃.
Step 3 prepares SiO with PECVD in the source electrode of step 1 preparation and drain electrode 2Insulating barrier, thickness are 150nm;
Step 4 prepares the Ti/Au grid with magnetron sputtering method, and thickness is 100nm;
Produce ITO/InZn xLi yN zO/SiO 2The indium oxide base film transistor of/Ti/Au top grid structure.
A kind of indium oxide base film transistor fabrication method eight, the step of this manufacture method comprises:
Step 1 is put into magnetron sputtering then in glass substrate preparation ITO bottom-gate, carries out preliminary treatment;
Step 2 prepares SiO with PECVD in the source electrode of step 1 preparation and drain electrode 2Insulating barrier, thickness are 150nm;
Step 3 prepares InZn with magnetron sputtering method xLi yN zO channel layer, thickness are 60nm, x=0, and y=0.01, Z=0.01, sputtering power are 100W, and oxygen/argon pressure ratio is 0%, and growth temperature is 300 ℃, and annealing temperature is 450 ℃.
Step 4 prepares ITO source electrode and drain electrode with magnetron sputtering method, and thickness is 150nm;
Produce ITO/SiO 2/ InZn xLi yN zThe indium oxide base film transistor of O/ITO bottom-gate structure.
When channel layer is InZn xLi yN zDuring O, its target is In 2O 3, ZnO, Li 2O and Zn 3N 2, x=0～2, y=0～0.1, Z=0～0.1 prepares in target company.

Claims (5)

1. indium oxide base film transistor, this thin-film transistor comprise the end or the top grid structure that substrate, insulating barrier, channel layer, protection passivation layer and electrode constitute; It is characterized in that:
Described channel layer is InZn xLi yN zO;
InZn xLi yN zThe target of O comprises In 2O 3, ZnO, Li 2O and Zn 3N 2, x=0～2, y=0～0.1, Z=0～0.1, thickness is 20～60nm.
2. a kind of indium oxide base film transistor according to claim 1, it is characterized in that: described insulating barrier is SiO 2, HfO 2, ZrO 2Or Al 2O 3, thickness is 60～300nm.
3. a kind of indium oxide base film transistor according to claim 1, it is characterized in that: described protection passivation layer is SiO 2Or Al 2O 3, thickness is 0～300nm.
4. a kind of indium oxide base film transistor according to claim 1, it is characterized in that: described substrate is ito glass or Si.
5. indium oxide base film transistor fabrication method, the step of this method comprises:
Step 1 prepares hearth electrode at substrate, puts into magnetron sputtering then, carries out preliminary treatment;
Step 2 prepares insulating barrier at the hearth electrode of step 1 preparation, and its thickness is 60～300nm;
Prepare SiO with sputtering method 2, HfO 2, ZrO 2Or Al 2O 3Insulating barrier, its power is 70～200W, oxygen/argon pressure ratio is 0～40%, growth temperature is room temperature～500 ℃;
Or be equipped with SiO with the PECVD legal system 2Or HfO 2Or ZrO 2Or Al 2O 3Insulating barrier;
Or prepare SiO with thermal oxidation method 2Insulating barrier;
Step 3 prepares channel layer;
Step 4 prepares SiO with magnetron sputtering method 2Or Al 2O 3, thickness is the protection passivation layer of 0～300nm;
Or be equipped with SiO with the PECVD legal system 2Or Al 2O 3The protection passivation layer;
Step 5 prepares electrode with magnetron sputtering method or thermal evaporation, produces thin-film transistor;
It is characterized in that:
Described step 3 prepares channel layer;
Channel layer materials adopts InZn xLi yN zDuring O, prepare InZn with magnetron sputtering method xLi yN zThe channel layer of O, thickness are 20～60nm, x=0～2, and y=0～0.1, Z=0～0.1, sputtering power is 70～200W, and oxygen/argon pressure ratio is 0～40%, and growth temperature is room temperature～500 ℃, and annealing temperature is 350～500 ℃ or 760～960 ℃.
CN201310195082.5A 2013-05-23 2013-05-23 A kind of indium oxide thin film transistor and preparation method thereof Active CN103258859B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108258055A (en) * 2018-01-15 2018-07-06 北京交通大学 Zinc indium tin oxide based thin film transistors and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120119206A1 (en) * 2010-11-15 2012-05-17 Seong-Min Wang Oxide Semiconductor Thin Film Transistor, and Method of Manufacturing the Same
US20120292610A1 (en) * 2011-05-17 2012-11-22 Seong-Min Wang Oxide semiconductor devices, methods of manufacturing oxide semiconductor devices, display devices having oxide semiconductor devices, methods of manufacturing display devices having oxide semiconductor devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120119206A1 (en) * 2010-11-15 2012-05-17 Seong-Min Wang Oxide Semiconductor Thin Film Transistor, and Method of Manufacturing the Same
US20120292610A1 (en) * 2011-05-17 2012-11-22 Seong-Min Wang Oxide semiconductor devices, methods of manufacturing oxide semiconductor devices, display devices having oxide semiconductor devices, methods of manufacturing display devices having oxide semiconductor devices

Non-Patent Citations (1)

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Title
Y.Z. ZHANG ET AL: "Effects of growth temperature on Li–N dual-doped p-type", 《APPLIED SURFACE SCIENCE》, no. 254, 10 August 2007 (2007-08-10), pages 1993 - 1996 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108258055A (en) * 2018-01-15 2018-07-06 北京交通大学 Zinc indium tin oxide based thin film transistors and preparation method thereof

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