CN108257874B - 半导体元件及其制作方法 - Google Patents
半导体元件及其制作方法 Download PDFInfo
- Publication number
- CN108257874B CN108257874B CN201611242454.5A CN201611242454A CN108257874B CN 108257874 B CN108257874 B CN 108257874B CN 201611242454 A CN201611242454 A CN 201611242454A CN 108257874 B CN108257874 B CN 108257874B
- Authority
- CN
- China
- Prior art keywords
- layer
- gate
- forming
- electrode
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 10
- GPMBECJIPQBCKI-UHFFFAOYSA-N germanium telluride Chemical compound [Te]=[Ge]=[Te] GPMBECJIPQBCKI-UHFFFAOYSA-N 0.000 claims description 4
- 229910000618 GeSbTe Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 description 10
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 229910000951 Aluminide Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- OQPDWFJSZHWILH-UHFFFAOYSA-N [Al].[Al].[Al].[Ti] Chemical compound [Al].[Al].[Al].[Ti] OQPDWFJSZHWILH-UHFFFAOYSA-N 0.000 description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 229910021324 titanium aluminide Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 229910020684 PbZr Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 1
- QEQWDEBBDASYQQ-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[O--].[Sr++].[Ta+5].[Bi+3] Chemical compound [O--].[O--].[O--].[O--].[O--].[Sr++].[Ta+5].[Bi+3] QEQWDEBBDASYQQ-UHFFFAOYSA-N 0.000 description 1
- RRVYLMBVZYKOLH-UHFFFAOYSA-N [O-2].[Zn+2].[Al+3].[Hf+4].[In+3].[O-2].[O-2].[O-2].[O-2].[O-2] Chemical compound [O-2].[Zn+2].[Al+3].[Hf+4].[In+3].[O-2].[O-2].[O-2].[O-2].[O-2] RRVYLMBVZYKOLH-UHFFFAOYSA-N 0.000 description 1
- OIJHATZRTIMFDE-UHFFFAOYSA-N [O-2].[Zn+2].[Hf+4].[Sn+4].[In+3] Chemical compound [O-2].[Zn+2].[Hf+4].[Sn+4].[In+3] OIJHATZRTIMFDE-UHFFFAOYSA-N 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- IOKZQYBPJYHIIW-UHFFFAOYSA-N aluminum zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Al+3].[Sn+4].[In+3].[O-2].[O-2].[O-2].[O-2].[O-2] IOKZQYBPJYHIIW-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/82345—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
本发明公开一种半导体元件及其制作方法。首先形成一通道层于一基底上,然后形成一栅极介电层于通道层上,形成一源极层以及一漏极层于栅极介电层两侧,形成一下电极于栅极介电层上,形成一相位转换层于下电极上以及形成一上电极于相位转换层上。
Description
技术领域
本发明涉及一种制作半导体元件的方法,尤其是涉及一种制作氧化物半导体晶体管的方法。
背景技术
近期将半导体薄膜设于一具有绝缘表面的基底上以形成晶体管的技术普遍受到注目,其中该晶体管可应用于例如集成电路或影像显示元件等各种电子元件中。目前广泛用来制作半导体薄膜的材料通常包含以硅为基础的半导体材料,而其中又以氧化物半导体更受到各界注目。
一般而言,包含前述氧化物半导体薄膜的晶体管在电路呈现关闭状态(offstate)时具有非常低的漏电流。然而,现今在整合具有氧化物半导体层的晶体管与一般具有金属栅极的金属氧化物半导体晶体管时仍遇到许多瓶颈,例如因制作流程过于复杂并造成成本增加等问题。因此如何改良现有包含氧化物半导体薄膜的晶体管元件的制作工艺即为现今一重要课题。
发明内容
本发明一实施例公开一种制作半导体元件的方法。首先形成一通道层于一基底上,然后形成一栅极介电层于通道层上,形成一源极层以及一漏极层于栅极介电层两侧,形成一下电极于栅极介电层上,形成一相位转换层于下电极上以及形成一上电极于相位转换层上。
本发明另一实施例公开一种半导体元件,其主要包含:一通道层设于一基底上、一下电极设于通道层上、一源极层以及一漏极层设于栅极介电层两侧、一相位转换层设于下电极上以及一上电极设于相位转换层上。
附图说明
图1至图6为本发明较佳实施例制作一半导体元件的方法示意图。
其中,附图标记说明如下:
12 基底 14 通道层
16 栅极介电层 18 源极层
20 漏极层 22 第一介电层
24 第一凹槽 26 功函数层
28 栅极电极 30 下电极
32 第二介电层 34 第二凹槽
36 第一栅极层 38 相位转换层
40 第二栅极层 42 上电极
44 第三介电层 46 第三凹槽
48 导电插塞
具体实施方式
请参照图1至图6,图1至图6为本发明较佳实施例制作一半导体元件的方法示意图。如图1所示,首先提供一基底12,基底12上可设有至少一包含例如氧化硅所构成的绝缘层(图未示),且基底12例如是硅基底、外延硅基底、碳化硅基底或硅覆绝缘(silicon-on-insulator,SOI)基底等的半导体基底,但不以此为限。然后全面性覆盖一由氧化物半导体所构成的通道层14于基底12上的绝缘层上方。在本实施例中,通道层14较佳选自由氧化铟镓锌、氧化铟铝锌、氧化铟锡锌、氧化铟铝镓锌、氧化铟锡铝锌、氧化铟锡铪锌以及氧化铟铪铝锌所构成的群组,但不局限于此。
接着全面性覆盖一栅极介电层16于通道层14上,再利用光刻暨蚀刻制作工艺去除部分栅极介电层16,以于通道层14的约略中间位置形成一图案化的栅极介电层16。在本实施例中,栅极介电层16可包含二氧化硅(SiO2)、氮化硅(SiN)或高介电常数(highdielectric constant,high-k)材料。
依据本发明一实施例,高介电常数介电材料包含介电常数大于4的介电材料,例如可选自氧化铪(hafnium oxide,HfO2)、硅酸铪氧化合物(hafnium silicon oxide,HfSiO4)、硅酸铪氮氧化合物(hafnium silicon oxynitride,HfSiON)、氧化铝(aluminum oxide,Al2O3)、氧化镧(lanthanum oxide,La2O3)、氧化钽(tantalum oxide,Ta2O5)、氧化钇(yttrium oxide,Y2O3)、氧化锆(zirconiumoxide,ZrO2)、钛酸锶(strontium titanateoxide,SrTiO3)、硅酸锆氧化合物(zirconium silicon oxide,ZrSiO4)、锆酸铪(hafniumzirconium oxide,HfZrO4)、锶铋钽氧化物(strontium bismuth tantalate,SrBi2Ta2O9,SBT)、锆钛酸铅(leadzirconate titanate,PbZrxTi1-xO3,PZT)、钛酸钡锶(bariumstrontium titanate,BaxSr1-xTiO3,BST)、或其组合所组成的群组。
然后以化学气相沉积(例如等离子体辅助化学气相沉积)或物理气相沉积(例如离子溅镀)全面性覆盖一导电层(图未示)于通道层14上并完全覆盖栅极介电层16。在本实施例中,导电层可包含铝、铬、铜、钽、钼、钨或其组合,但不局限于此。接着对导电层进行图案转移,例如可先形成一图案化光致抗蚀剂(图未示)于导电层上,然后进行一蚀刻制作工艺去除部分未被图案化光致抗蚀剂所覆盖的导电层,以于栅极介电层16两侧的通道层14表面形成一源极层18与一漏极层20。
接着如图2所示,形成一第一介电层22于源极层18、漏极层20以及栅极介电层16上,并进行一光刻暨蚀刻制作工艺,例如可先形成一图案化掩模于第一介电层22上,再利用蚀刻方式去除部分第一介电层22,以于第一介电层22中形成一第一凹槽24暴露出部分栅极介电层16表面。随后再形成一功函数层26于第一介电层22上表面以及第一凹槽24侧壁。
依据本发明的一实施例,功函数层26可选用功函数为3.9电子伏特(eV)~4.3eV的金属材料,如铝化钛(TiAl)、铝化锆(ZrAl)、铝化钨(WAl)、铝化钽(TaAl)、铝化铪(HfAl)或TiAlC(碳化钛铝)等,但不以此为限。除此之外,功函数层26又可选用功函数为4.8eV~5.2eV的金属材料,如氮化钛(TiN)、氮化钽(TaN)或碳化钽(TaC)等,但不以此为限。
随后如图3所示,形成一栅极电极28于功函数层26上,例如可先全面沉积另一导电层(图未示)于功函数层26上,然后进行一平坦化制作工艺,例如以化学机械研磨(chemicalmechanical polishing,CMP)制作工艺去除部分导电层、部分功函数层26甚至部分第一介电层22,使剩余的导电层与功函数层26上表面切齐第一介电层22上表面,其中剩余的导电层即成为一栅极电极28,而功函数层26与栅极电极28可一同构成一下电极30。在本实施例中,栅极电极28的材料可与源极层18或漏极层20相同或不同,例如可包含铝、铬、铜、钽、钼、钨或其组合,但不局限于此。
然后如图4所示,形成一第二介电层32于第一介电层22上,并进行一光刻暨蚀刻制作工艺,例如可先形成一图案化掩模于第二介电层32上,再利用蚀刻方式去除部分第二介电层32,以于第二介电层32中形成一第二凹槽34暴露出栅极电极28与功函数层26表面。之后再形成一第一栅极层36于第二介电层32上表面与第二凹槽34侧壁并接触栅极电极28与功函数层26,其中第一栅极层36的材料组成可与栅极电极28相同或不同,例如可包含铝、铬、铜、钽、钼、钨或其组合,但不局限于此。
接着如图5所示,依序形成一相位转换(phase change)层38以及一第二栅极层40于第一栅极层36上并填满第二凹槽34。在本实施例中,第二栅极层40的材料组成可与栅极电极28以及第一栅极层36相同或不同,例如可包含铝、铬、铜、钽、钼、钨或其组合,但不局限于此。此外,本实施例的相位转换层38较佳包含锗锑碲(germanium antimony telluride,GST)或碲化锗(germanium telluride),但不局限于此。值得注意的是,本实施例中所公开的相位转换层38较佳由具有相位变换特性的微纳米材料所构成,其可通过施加不同的电压来改变材料的特性,例如可使相位转换层38由结晶(crystalline)状态转换至非晶(amorphous)状态或由非晶状态转换至结晶状态,由此提供高低电阻值的调控以及多重临界电压(Multi-Vt)的选择。
随后如图6所示,先进行一平坦化制作工艺,例如以化学机械研磨制作工艺去除部分第二栅极层40并停在相位转换层38上,使第二栅极层40上表面切齐相位转换层38,然后再以蚀刻方式去除部分相位转换层38并暴露出下面的第一栅极层36,使相位转换层38上表面切齐第一栅极层36上表面。在此阶段,剩余的第二栅极层40上表面较佳凸出或略高于于两旁的相位转换层38上表面并形成一上电极42。
之后全面性形成一第三介电层44于第一栅极层36、相位转换层38以及上电极42上,并进行一光刻暨蚀刻制作工艺,例如可先形成一图案化掩模于第三介电层44上,再利用蚀刻方式去除部分第三介电层44,以于第三介电层44中形成一第三凹槽46暴露出上电极42表面。最后可再依据制作工艺需求形成一导电插塞48电连接并直接接触上电极42,例如可先形成一导电层填满第三凹槽46并覆盖第三介电层表面44,接着再以蚀刻方式去除部分导电层,使剩余的导电层形成导电插塞48。至此即完成本发明较佳实施例的一半导体元件的制作。
请再参照图6,图6另为本发明较佳实施例的一半导体元件的结构示意图。如图6所示,半导体元件较佳包含一通道层14设于基底12上、一下电极30设于通道层14上、一源极层18以及一漏极层20设于下电极30两侧、一相位转换层38设于下电极30上以及一上电极42设于相位转换层38上,其中下电极30可包含一栅极电极28设于通道层14上以及一功函数层26设于栅极电极28与通道层14之间。
此外,半导体元件又包含一第一介电层22设于源极层18与漏极层20上以及栅极电极28周围,一第二介电层32设于第一介电层22上并环绕相位转换层,一栅极层或前述的第一栅极层36设于相位转换层38与第二介电层32之间以及第二介电层32上表面,一第三介电层44于第一栅极层36上与上电极42周围以及一导电插塞48设于第三介电层44内并连接上电极42。
从细部来看,功函数层26为U型,栅极电极28的上表面较佳切齐功函数层26与第一介电层22上表面,第一栅极层36的上表面较佳切齐相位转换层38的上表面,且上电极42的上表面较佳略高于相位转换层38以及第一栅极层36的上表面。
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (19)
1.一种制作半导体元件的方法,包含:
形成一通道层于一基底上;
形成一栅极介电层于该通道层上;
形成一源极层以及一漏极层于该栅极介电层两侧以及该通道层的正上方;
在形成该源极层以及该漏极层之后,形成一下电极于该栅极介电层上;
形成一相位转换层于该下电极上;以及
形成一上电极于该相位转换层上。
2.如权利要求1所述的方法,另包含:
形成一第一介电层于该源极层以及该漏极层上;
形成一第一凹槽于该第一介电层中;
形成一功函数层于该第一凹槽内;以及
形成一栅极电极于该功函数层上。
3.如权利要求2所述的方法,其中该栅极电极的上表面切齐该功函数层以及该第一介电层的上表面。
4.如权利要求2所述的方法,另包含:
于形成该栅极电极后形成一第二介电层于该第一介电层上;
形成一第二凹槽于该第二介电层上;
形成一第一栅极层于该第二凹槽内;
形成该相位转换层于该第一栅极层上;以及
形成该上电极于该相位转换层上。
5.如权利要求4所述的方法,另包含形成该第一栅极层于该第二凹槽内并接触该栅极电极。
6.如权利要求4所述的方法,另包含:
形成该相位转换层于该第二凹槽内;
形成一第二栅极层于该相位转换层上;
平坦化该第二栅极层;以及
去除设于该第二介电层上的部分该相位转换层以形成该上电极。
7.如权利要求6所述的方法,另包含于形成该上电极后形成一第三介电层于该第一栅极层以及该功函数层上。
8.如权利要求6所述的方法,其中该第一栅极层以及该栅极电极包含相同材料。
9.如权利要求2所述的方法,其中该上电极以及该栅极电极包含相同材料。
10.如权利要求1所述的方法,其中该相位转换层包含锗锑碲(germanium antimonytelluride,GST)或碲化锗(germanium telluride)。
11.一种半导体元件,包含:
通道层,设于一基底上;
下电极,设于该通道层上,该下电极包含栅极电极以及功函数层,该功函数层位于该栅极电极与该通道层之间;
源极层以及漏极层,设于该下电极两侧;
第一介电层,设于该源极层与该漏极层上以及该栅极电极周围,其中该第一介电层直接接触该功函数层;
相位转换层,设于该下电极上;以及
上电极,设于该相位转换层上。
12.如权利要求11所述的半导体元件,其中该功函数层为U型。
13.如权利要求11所述的半导体元件,其中该栅极电极的上表面切齐该功函数层以及该第一介电层的上表面。
14.如权利要求11所述的半导体元件,另包含:
第二介电层,设于该第一介电层上并环绕该相位转换层;以及
栅极层,设于该相位转换层与该第二介电层之间以及该第二介电层上。
15.如权利要求14所述的半导体元件,其中该相位转换层为U型。
16.如权利要求14所述的半导体元件,其中该相位转换层包含锗锑碲(germaniumantimony telluride,GST)或碲化锗(germanium telluride)。
17.如权利要求14所述的半导体元件,其中该栅极层的上表面切齐该相位转换层的上表面。
18.如权利要求14所述的半导体元件,其中该上电极的上表面高于该相位转换层以及该栅极层的上表面。
19.如权利要求14所述的半导体元件,另包含第三介电层,设于该栅极层上以及该上电极周围。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611242454.5A CN108257874B (zh) | 2016-12-29 | 2016-12-29 | 半导体元件及其制作方法 |
US15/413,349 US9887238B1 (en) | 2016-12-29 | 2017-01-23 | Semiconductor device and method for fabricating the same |
US15/849,563 US10062734B2 (en) | 2016-12-29 | 2017-12-20 | Method for fabricating a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611242454.5A CN108257874B (zh) | 2016-12-29 | 2016-12-29 | 半导体元件及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108257874A CN108257874A (zh) | 2018-07-06 |
CN108257874B true CN108257874B (zh) | 2021-07-13 |
Family
ID=61027145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201611242454.5A Active CN108257874B (zh) | 2016-12-29 | 2016-12-29 | 半导体元件及其制作方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US9887238B1 (zh) |
CN (1) | CN108257874B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110518072B (zh) * | 2019-08-29 | 2023-04-07 | 合肥鑫晟光电科技有限公司 | 薄膜晶体管及其制备方法和显示装置 |
CN110660846B (zh) * | 2019-09-30 | 2023-04-07 | 合肥鑫晟光电科技有限公司 | 薄膜晶体管及制作方法、发光装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100476893B1 (ko) * | 2002-05-10 | 2005-03-17 | 삼성전자주식회사 | 상변환 기억 셀들 및 그 제조방법들 |
KR100653701B1 (ko) * | 2004-08-20 | 2006-12-04 | 삼성전자주식회사 | 반도체 소자의 작은 비아 구조체 형성방법 및 이를 사용한상변화 기억 소자의 제조방법 |
JP4437479B2 (ja) * | 2006-08-02 | 2010-03-24 | 株式会社半導体理工学研究センター | 相変化メモリ素子 |
US7800092B2 (en) * | 2006-08-15 | 2010-09-21 | Micron Technology, Inc. | Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using |
US7915603B2 (en) * | 2006-10-27 | 2011-03-29 | Qimonda Ag | Modifiable gate stack memory element |
TWI318470B (en) * | 2006-11-24 | 2009-12-11 | Ind Tech Res Inst | Phase change memory device and method of fabricating the same |
KR20080091681A (ko) * | 2007-04-09 | 2008-10-14 | 서울시립대학교 산학협력단 | 구동전압 변경설정이 가능한 트랜지스터 및 그 제조방법 |
US7795605B2 (en) * | 2007-06-29 | 2010-09-14 | International Business Machines Corporation | Phase change material based temperature sensor |
US7671355B2 (en) * | 2008-03-24 | 2010-03-02 | United Microelectronics Corp. | Method of fabricating a phase change memory and phase change memory |
KR101653569B1 (ko) * | 2009-09-01 | 2016-09-02 | 삼성전자주식회사 | 상변화 물질을 포함하는 비휘발성 메모리 소자 |
US20120319179A1 (en) * | 2011-06-16 | 2012-12-20 | Hsin-Fu Huang | Metal gate and fabrication method thereof |
US9455343B2 (en) * | 2013-09-27 | 2016-09-27 | Intel Corporation | Hybrid phase field effect transistor |
US9299799B2 (en) * | 2014-06-10 | 2016-03-29 | International Business Machines Corporation | Semiconductor devices containing an epitaxial perovskite/doped strontium titanate structure |
TWI731863B (zh) * | 2016-06-30 | 2021-07-01 | 聯華電子股份有限公司 | 氧化物半導體電晶體以及其製作方法 |
US9847428B1 (en) * | 2016-08-08 | 2017-12-19 | United Microelectronics Corp. | Oxide semiconductor device |
-
2016
- 2016-12-29 CN CN201611242454.5A patent/CN108257874B/zh active Active
-
2017
- 2017-01-23 US US15/413,349 patent/US9887238B1/en active Active
- 2017-12-20 US US15/849,563 patent/US10062734B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9887238B1 (en) | 2018-02-06 |
US10062734B2 (en) | 2018-08-28 |
CN108257874A (zh) | 2018-07-06 |
US20180190714A1 (en) | 2018-07-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10692990B2 (en) | Gate cut in RMG | |
US10629695B2 (en) | Semiconductor device and method for fabricating the same | |
US8691652B2 (en) | Semiconductor process | |
US10141432B2 (en) | Semiconductor structure | |
US8765588B2 (en) | Semiconductor process | |
CN107026126B (zh) | 半导体元件及其制作方法 | |
US20210167189A1 (en) | Semiconductor device and method for fabricating the same | |
CN108257874B (zh) | 半导体元件及其制作方法 | |
TWI612666B (zh) | 一種製作鰭狀場效電晶體的方法 | |
US9543203B1 (en) | Method of fabricating a semiconductor structure with a self-aligned contact | |
US10090398B2 (en) | Manufacturing method of patterned structure of semiconductor | |
US20170207133A1 (en) | Multiple patterning techniques for metal gate | |
CN112736079A (zh) | 具有连接pmos区域栅极结构的接触插塞的半导体元件 | |
US10283412B2 (en) | Semiconductor device and fabrication method thereof | |
TWI528461B (zh) | 半導體製程 | |
US11527652B2 (en) | Semiconductor process | |
US11302794B2 (en) | FinFET with dual work function metal | |
TWI552209B (zh) | 形成半導體元件的方法 | |
CN109545747B (zh) | 半导体元件及其制作方法 | |
CN108461482B (zh) | 一种半导体器件及其制造方法 | |
WO2020087393A1 (zh) | 负电容鳍式场效应管的制备方法及负电容鳍式场效应管 | |
TW202135227A (zh) | 半導體元件及其製作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |