CN108231882A - HEMT device with back surface field harden structure and preparation method thereof - Google Patents
HEMT device with back surface field harden structure and preparation method thereof Download PDFInfo
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- CN108231882A CN108231882A CN201810174890.6A CN201810174890A CN108231882A CN 108231882 A CN108231882 A CN 108231882A CN 201810174890 A CN201810174890 A CN 201810174890A CN 108231882 A CN108231882 A CN 108231882A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 14
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 9
- 238000005036 potential barrier Methods 0.000 claims abstract description 8
- 241000826860 Trapezium Species 0.000 claims abstract description 7
- 238000002161 passivation Methods 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 12
- 230000017525 heat dissipation Effects 0.000 abstract description 5
- 238000002955 isolation Methods 0.000 abstract description 2
- 229910002601 GaN Inorganic materials 0.000 abstract 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 2
- 239000000686 essence Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention discloses the HEMT devices with back surface field harden structure, include silicon substrate, GaN epitaxial layer, AlGaN potential barrier, Si successively from the bottom to top3N4Passivation protection layer；Gate electrode, source electrode and drain electrode are set on AlGaN potential barrier；The silicon substrate is equipped with the groove that cross section is right-angled trapezium；The slot opening is downward, and the top of groove is the lower surface of GaN epitaxial layer；Back surface field harden structure is set on the atop part of the portion lower surface of silicon substrate, the inclined-plane of groove, groove.The invention also discloses the preparation methods of the above-mentioned HEMT device with back surface field harden structure.The present invention utilizes substrate isolation and back surface field plate technique, the substrate breakdown of device is avoided, improves the breakdown voltage of GaN HEMT devices, reduces grid leakage side field strength peak value, the heat dissipation performance of device is improved, for realizing that high-performance, high reliability gallium-nitride-based devices are of great significance.
Description
Technical field
The present invention relates to high electron mobility transistor (HEMT), HEMT device more particularly to back surface field harden structure and
Preparation method.
Background technology
Power electronic devices is widely used in the various fields such as household electrical appliance, industrial equipment, automobile power source.Electric power of new generation
Electronic device requires higher reliability under higher efficiency, higher power density and high-temperature work environment.At present, it is electric
The power device of silicon substrate is generally used in power electronic device, such as MOSFET and IGBT.But silicon power electronic component is by long-term
Development, performance and the theoretical limit for tending to its material, power electronic devices of new generation are faced with high pressure, high frequency and corpusculum
The huge challenges such as product.Third generation semi-conducting material GaN has big energy gap, saturated electrons migration velocity height, chemical property
The advantages that stablizing.Therefore, the power electronic devices based on GaN material has that conducting resistance is small, switching speed is fast, high pressure, resistance to
The advantages that high-temperature behavior is good.On the other hand, GaN can be grown on Si, SiC and sapphire.GaN high electron mobility transistor
It is a kind of power electronic devices based on GaN material, by being epitaxially formed AlGaN/GaN hetero-junctions, by the tune of polarized electric field
It makes and uses, even if can also form surface density up to 10 in the case of inartificial doping at heterogeneous interface13The two dimension electricity of cm-2
Sub- gas, since material does not adulterate, mobility of the electronics in GaN is more than 2000cm in two dimensional surface2/Vs.This causes GaN
HEMT has the characteristics that low on-resistance and high working frequency.It disclosure satisfy that power electronic devices of new generation to more high-power, more
The requirement of high-frequency, smaller volume and high temperature operating conditions can be applied to AC/DC, DC/DC converters, DC/AC motor drives
Device and photovoltaic generation etc..
Since Si substrates have many advantages, such as that cheap, technical maturity, diameter are big, GaN HEMT are prepared on Si substrates at present
As research hotspot.Wherein, the one of HEMT device research big hot spot is the breakdown problem under high-pressure work state.Grid leaks side
Edge is easy to cause electrical breakdown and thermal breakdown due to there is maximum electric field under the conditions of high pressure and rapid translating.In addition, Si materials
Material has low energy gap, and Si substrates become the most weak position of device, are easily broken down by high-voltage, limit Si substrates
The applications of GaN HEMT under high pressure.Usual Si substrate GaNs HEMT is applied in 1000V hereinafter, limiting its operating power.
The measure for improving device electric breakdown strength existing at present has setting field plate structure to reduce gate electric field density；Compensation is mixed
Miscellaneous acquisition high resistant Si substrates, this method cannot fundamentally change the essence of Si material low energy gaps；And increase epitaxial buffer
Layer thickness improves OFF resistance, and this method epitaxial growth time is long, substantially increases production cost, increases epitaxial thickness,
Also higher challenge is proposed to device heat dissipation performance.
Invention content
It is hardened with back surface field the purpose of the present invention is to provide one kind in order to overcome the disadvantages mentioned above of the prior art with insufficient
The HEMT device of structure had not only solved the problems, such as that existing Si substrates HEMT high-pressure works easily punctured at silicon substrate position, but also solution
The problem of certainly electrical breakdown and thermal breakdown occur for grid leakage side, realizes and is worked normally under the 1kV voltages of Si substrates HEMT.
Another object of the present invention is to provide the preparation method of the above-mentioned HEMT device with back surface field harden structure.
The purpose of the present invention is achieved through the following technical solutions：
HEMT device with back surface field harden structure includes silicon substrate, GaN epitaxial layer, AlGaN potential barriers successively from the bottom to top
Layer, Si3N4Passivation protection layer；Gate electrode, source electrode and drain electrode are set on AlGaN potential barrier；The silicon substrate is equipped with transversal
Face is the groove of right-angled trapezium；The slot opening is downward, and the top of groove is the lower surface of GaN epitaxial layer；Back surface field harden structure
On the inclined-plane of portion lower surface, groove, the atop part of groove set on silicon substrate.
Contact line width of the back surface field harden structure with GaN epitaxial layer is 5~10 μm.
The groove top is not 5~10 μm by the transverse width of back surface field harden structure covering part.
Obtain metallic film of the back surface field harden structure for electron-beam evaporation, thickness are 50nm~2 μm.
The preparation method of HEMT device with back surface field harden structure, includes the following steps：
(1) etching window area is prepared below Si substrate back grids using double-sided alignment photoetching technique in HEMT device
Domain, the line width on window area source and drain direction are 5~10 μm；
(2) using the method for deep silicon etching, window area is etched to GaN epitaxial layer, during etching, experience light again twice
Quarter process, every time by window to source electrode direction expand 10~50 μm, finally obtain cross section be right-angled trapezium groove；
(3) using double-sided alignment photoetching technique, back surface field sheetmetal deposition window is prepared etching reeded silicon substrate bottom surface
Mouthful；
(4) the portion lower surface of silicon substrate, the inclined-plane of groove, groove atop part surface depositing Ti/Au metals, shape
Into back surface field harden structure.
The thickness of the Si substrates is 300~1000um.
Step (4) is described to be deposited as depositing by the way of electron beam evaporation.
The principle of the present invention is as follows：
The HEMT device with back surface field harden structure of the present invention, first by the way that substrate etching is isolated, make between source and drain by
It can not being connected in there are air as dielectric by Si substrates, device is difficult to puncture at low energy gap Si substrates, because
And high voltage can be born.Secondly, bottom evaporation metal is as back surface field plate, and being connected with source electrode and encapsulating material not only can be with
Play the role of weakening grid leakage lateral edges peak electric field, improve breakdown voltage, be also used as heat transfer medium, device is generated
Heat conduct in time, reduce the operating temperature of device, improve service life.
Compared with prior art, the present invention has the following advantages and beneficial effect：
(1) substrate of HEMT device is completely isolated to two parts by the present invention below grid, be equivalent between source and drain with
Air effectively can avoid substrate from puncturing, improve breakdown voltage as dielectric.
(2) mode present invention employs bottom deposit metal forms back surface field harden structure, can effectively alleviate grid leakage side
Peak electric field, while heat dissipation can be increased, effectively reduce device operating temperature.
Description of the drawings
Fig. 1 is the structure diagram of the HEMT device with back surface field harden structure of the present invention.
Specific embodiment
With reference to embodiment, the present invention is described in further detail, but the implementation of the present invention is not limited to this.
Embodiment
As shown in Figure 1, the present invention the HEMT device with back surface field harden structure, from the bottom to top successively including silicon substrate 2,
GaN epitaxial layer 3, AlGaN potential barrier 4, Si3N4Passivation protection layer 5；Gate electrode 6, source electrode 7 and drain electrode 8 are set on AlGaN potential barriers
On layer 4；The silicon substrate is equipped with the groove 9 that cross section is right-angled trapezium；The slot opening is downward, and the top of groove is
The lower surface of GaN epitaxial layer；Back surface field harden structure 1 is set on the atop part of the portion lower surface of silicon substrate, the inclined-plane of groove, groove
On.Contact line width 10 of the back surface field harden structure with GaN epitaxial layer is 5~10 μm.The groove top is not hardened by back surface field
The transverse width of structure covering part 11 is 5~10 μm.The back surface field harden structure is sheet metal, and thickness is 50nm~2 μm.
The preparation method of HEMT device with back surface field harden structure, includes the following steps：
(1) in HEMT device using double-sided alignment photoetching technique, in Si substrates (thickness is 300~1000um) back gate
Lower section prepares etching window region, and the line width on window area source and drain direction is 5~10 μm；
(2) using the method for deep silicon etching, window area is etched to GaN epitaxial layer, during etching, experience light again twice
Quarter process, every time by window to source electrode direction expand 10~50 μm, finally obtain cross section be right-angled trapezium groove；
(3) using double-sided alignment photoetching technique, back surface field sheetmetal deposition window is prepared etching reeded silicon substrate bottom surface
Mouthful；
(4) by the way of electron beam evaporation, the inclined-plane of portion lower surface, groove in silicon substrate, the part top of groove
Portion surface depositing Ti/Au metals forms back surface field harden structure.
Si substrate GaNs HEMT manufactured in the present embodiment by back surface field plate earthing after device encapsulation, is surveyed by power measuring
Try breakdown voltage up to more than 2000V, device aging analysis shows that, have back surface field plate HEMT device average life span improve
20%.
The present invention is avoided the high-voltage breakdown of low energy gap Si substrates, is effectively alleviated using isolation liner bottom and back surface field harden structure
Grid leakage side field strength peak value, bottom metal strengthen heat dissipation, and device temperature is substantially reduced.This arrangement enhances HEMT devices to hit
Wear voltage and heat dissipation performance.
Above-described embodiment is the preferable embodiment of the present invention, but embodiments of the present invention are not by the embodiment
Limitation, other any Spirit Essences without departing from the present invention with made under principle change, modification, replacement, combine, simplification,
Equivalent substitute mode is should be, is included within protection scope of the present invention.
Claims (7)
1. with back surface field harden structure HEMT device, which is characterized in that from the bottom to top successively include silicon substrate, GaN epitaxial layer,
AlGaN potential barrier, Si3N4Passivation protection layer；Gate electrode, source electrode and drain electrode are set on AlGaN potential barrier；The silicon lining
Bottom is equipped with the groove that cross section is right-angled trapezium；The slot opening is downward, and the top of groove is the lower surface of GaN epitaxial layer；
Back surface field harden structure is set on the atop part of the portion lower surface of silicon substrate, the inclined-plane of groove, groove.
2. the HEMT device according to claim 1 with back surface field harden structure, which is characterized in that the back surface field harden structure with
The contact line width of GaN epitaxial layer is 5~10 μm.
3. the HEMT device according to claim 1 with back surface field harden structure, which is characterized in that the groove top not by
The transverse width of back surface field harden structure covering part is 5~10 μm.
4. the HEMT device according to claim 1 with back surface field harden structure, which is characterized in that the back surface field harden structure is
Electron-beam evaporation obtains metallic film, and thickness is 50nm~2 μm.
5. the preparation method of the HEMT device described in claim 1 with back surface field harden structure, which is characterized in that including following step
Suddenly：
(1) etching window region, window are prepared below Si substrate back grids using double-sided alignment photoetching technique in HEMT device
Line width on the source and drain direction of mouth region domain is 5~10 μm；
(2) using the method for deep silicon etching, window area is etched to GaN epitaxial layer, during etching, undergoes photoetching again twice
Window is expanded 10~50 μm by journey to source electrode direction every time, finally obtains the groove that cross section is right-angled trapezium；
(3) using double-sided alignment photoetching technique, back surface field sheetmetal deposition window is prepared etching reeded silicon substrate bottom surface；
(4) the portion lower surface of silicon substrate, the inclined-plane of groove, groove atop part surface depositing Ti/Au metals, formed the back of the body
Field plate structure.
6. the preparation method of the HEMT device according to claim 5 with back surface field harden structure, which is characterized in that the Si
The thickness of substrate is 300~1000um.
7. the preparation method of the HEMT device according to claim 5 with back surface field harden structure, which is characterized in that step
(4) it is described to be deposited as depositing by the way of electron beam evaporation.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111613669A (en) * | 2020-06-02 | 2020-09-01 | 华南师范大学 | AlGaN high electron mobility transistor with high breakdown voltage and preparation method thereof |
| WO2020191892A1 (en) * | 2019-03-22 | 2020-10-01 | 华南理工大学 | Gan-hemt device having sandwich structure, and method for fabrication thereof |
| WO2022178870A1 (en) * | 2021-02-26 | 2022-09-01 | 华为技术有限公司 | Semiconductor device, electronic apparatus, and preparation method for semiconductor device |
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| CN103582951A (en) * | 2011-05-17 | 2014-02-12 | Hrl实验室有限责任公司 | GaN HEMT with a back gate connected to the source |
| CN207925478U (en) * | 2018-03-02 | 2018-09-28 | 华南理工大学 | HEMT device with back surface field harden structure |
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2018
- 2018-03-02 CN CN201810174890.6A patent/CN108231882A/en active Pending
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| JP2005217049A (en) * | 2004-01-28 | 2005-08-11 | Sanken Electric Co Ltd | Semiconductor device |
| US20110057235A1 (en) * | 2009-09-08 | 2011-03-10 | Kabushiki Kaisha Toshiba | Semiconductor device |
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| WO2022178870A1 (en) * | 2021-02-26 | 2022-09-01 | 华为技术有限公司 | Semiconductor device, electronic apparatus, and preparation method for semiconductor device |
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