CN102738228A - High electron mobility transistor (HEMT) with gate edge groove type source field plate structure - Google Patents
High electron mobility transistor (HEMT) with gate edge groove type source field plate structure Download PDFInfo
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Abstract
The invention discloses a high electron mobility transistor (HEMT) with a gate edge groove type source field plate structure and belongs to the field of semiconductor devices. The HEMT comprises a lining layer, a buffer layer, a barrier layer, a source, a gate, a drain, a passivation layer, the source field plate and a gate drainage region groove, wherein the gate drain region groove is formed along the edge of the gate in the gate drainage region and formed by etching the barrier layer in the width direction of the gate. Compared with the HEMT with the traditional source field plate, the HEMT with the gate edge groove type source field plate structure has the advantages that electric field wires collected at the periphery of one side, which is close to the drain, of the gate are reduced, so that the electric field at one side, which is close to the drain, of the gate can be reduced; and therefore, the breakdown voltage of the HEMT can be obviously increased.
Description
Technical field
The present invention relates to a kind of HEMT (High Electron Mobility Transistor; HEMT); Be particularly related to that a kind of gate edge forms the HEMT of the grid edge groove type source field plate structure of groove in the grid leak district; This HEMT can be used as the basic device of microwave, millimeter wave communication system and radar system, belongs to field of semiconductor devices.
Background technology
In the compound semiconductor electronic device, HEMT (HEMT) is to be applied to the topmost electronic device of high-frequency high-power occasion.This electronic device relies on the two-dimensional electron gas (2DEG) that has quantum effect in the heterojunction semiconductor to form conducting channel, and the density of 2DEG, mobility and saturated velocity etc. have determined the current handling capability of this device.Compare with the 2nd generation semi-conducting material GaAs (GaAs); III group nitride material (GaN; AlN; InN) third generation semi-conducting material gallium nitride (GaN) has advantages such as energy gap is big, critical breakdown electric field is high, electron saturation velocities is high, thermal conductivity is high, anti-irradiation ability is strong in aspect material character, so the high frequency of GaN HEMT, withstand voltage, high temperature resistant, adverse environment resistant is very capable; And the III group nitride material (GaN, AlN InN) have very strong spontaneous and piezoelectric polarization effect, can significantly improve the density of 2DEG in the HEMT material structure.
(HEMT InN) has been widely used in fields such as microwave, millimeter wave communication system and radar system for GaN, AlN, and it just becomes numerous researchers' research focus from be born based on the III group nitride material.1993, people such as Khan successfully developed and have reported first AlGaN/GaN heterojunction HEMT, referring to [High electron mobility transistor based on a GaN-Al
xGa
1-xN heterojunction, Applied Physics Letters, Vol.63, No.9, pp.1214-1215,1993], but the also not nearly enough ideal of its performance index.At present; Disclosed GaN HEMT can reach 10W/mm in the output power density of Ka wave band; Referring to [vol. 29 for 55% PAE and High Power Ka-Band GaN HEMTs with Linearized Transconductance via GaN Source Contact Ledge, Electron Device Letters; Pp. 834-837,2008].The reason that GaN HEMT device performance is rapidly improved comprises the employing of the raising of its quality of materials and the improvement of device technology, particularly various new device structures.
Because the electric field line distribution during HEMT work in its barrier region depletion layer is inhomogeneous, grid is often assembled most electric field line near the edge of drain electrode one side, so there is a quite high peak electric field at this place.The high electric field at this place can make gate leakage current increase, and causes its reliability variation; The high electric field at this place causes device generation avalanche breakdown easily in addition, thereby makes the advantage such as high-breakdown-voltage and high power density of such device be not in full use.For this reason, there is the researcher to adopt the grid field plate structure that it is improved, referring to [vol. 25 for 30-W/mm GaN HEMTs by field plate optimization, Electron Device Letters, and pp. 117-119,2004].Its basic principle is: said grid field plate will partly originally be collected near the electric field line of the gate edge of drain electrode one side and collect on the field plate; The result near the drain electrode one side gate edge and near the drain electrode one side the field panel edges peak electric field appears respectively; Thereby reduced the electric field line of collecting near drain electrode one side gate edge; Reduce the electric field strength at this place, and then reduced gate leakage current; Device electric breakdown strength also is improved simultaneously.The shortcoming of introducing the grid field plate is to have increased the grid leak feedback capacity, and said device power gain is decreased, and introduces the gain that is caused for the offset gate field plate and reduces; The mutual conductance that has the scholar to adopt the notched gates structure to increase device, i.e. barrier layer etched recesses below grid, thus improved the power gain of device; Referring to [A 149W recessed-gate AlGaN/GaN FP-FET; Microwave Symposium Digest, 2004 IEEE MTT-S International, vol. 3; Pp. 1351-1354,2004HEMTHEMT].But be employed in grid below barrier layer etching and form this structure of groove, can significantly reduce device current density, thereby influence the power-performance of device.2004; Y. people such as F. Wu has reported the GaN HEMT that adopts the source field plate again; Because field plate links to each other with source electrode, then field plate becomes drain-source electric capacity to channel capacitance, makes because the extra gate leakage capacitance that field plate is introduced is able to eliminate; Referring to [High-gain microwave GaN HEMTs with source-terminated field-plates; IEEE International Electron Devices Meeting Technical Digest, pp. 1078-1079, December 2004].
Summary of the invention
The object of the invention just is being based on existing defective and deficiency in the prior art, and the HEMT (HEMT) of the high grid edge groove type source field plate structure of simple, the easy to operate and good reliability of a kind of manufacturing process and puncture voltage is provided.This HEMT is through near the gate edge barrier layer of drain electrode one side, forming the HEMT of the grid edge groove type structure of groove; This HEMT can reduce the electric field strength near the gate edge of drain electrode one side; Thereby reduce gate leakage current, improve the puncture voltage of HEMT device, simultaneously; Grid leak district gate edge groove can not reduce the drain saturation current of device, thereby guarantees the high-output power density of device; In addition, grid leak district gate edge groove has stoped the depletion layer under the gate electrode to leaking the drift region expansion, has reduced gate leakage capacitance, thereby has improved the frequency characteristic of device.
For realizing above-mentioned purpose, the technical scheme that the present invention adopts following technical measures to constitute realizes.
A kind of grid edge groove type provided by the invention source field plate structure HEMT comprises substrate layer, resilient coating, barrier layer, source electrode, gate electrode, drain electrode, passivation layer and source field plate; According to the present invention, also comprise the groove in grid leak district, said grid leak district groove is the groove that etching forms along gate edge and on barrier layer in the grid leak district, said groove is along the grid width direction.
In the technique scheme, a sidewall of said grid leak district groove aligns with the gate edge of drain electrode one side, in the barrier layer of another sidewall between gate electrode and drain electrode.
In the technique scheme, said grid leak district depth of groove is less than barrier layer thickness.
In the technique scheme, can fill air or silicon dioxide (SiO in the said grid leak district groove
2) or silicon nitride (SiN) or alundum (Al (Al
2O
3) or HfO
2
In the technique scheme, said grid leak district groove is a square structure.
In the technique scheme, said grid leak district groove is a trapezium structure.
In the technique scheme, said grid leak district groove is a ladder-type structure.
The present invention compared with prior art has following characteristics and beneficial technical effects:
1, grid edge groove type source field plate structure HEMT of the present invention; Be near the gate edge barrier layer of drain electrode one side, to form groove to reduce electric field strength near the gate edge of drain electrode one side along grid width direction etching; Thereby reduced gate leakage current, improved the puncture voltage of this device.
2, grid edge groove type source field plate structure HEMT of the present invention compares with traditional HEMT structure, and grid leak according to the invention district gate edge groove can not reduce the drain saturation current of device, thereby can guarantee the high-output power density of device; In addition, grid leak district gate edge groove has stoped the depletion layer under the gate electrode to leaking the drift region expansion, has reduced gate leakage capacitance, thereby has improved the frequency characteristic of device.
3, the HEMT of grid edge groove type of the present invention source field plate structure can apply to high frequency, great-power electronic field.
Description of drawings
Fig. 1 is the HEMT structural representation of conventional source field plate;
Fig. 2 is the HEMT structural representation of grid edge groove type of the present invention source field plate;
Among the figure, 1 is substrate layer, and 2 is resilient coating, and 3 is barrier layer, and 4 is source electrode, and 5 is grid, and 6 are drain electrode, and 7 is passivation layer, and 8 is the source field plate, and 9 is grid leak district gate edge groove.
Fig. 3 is that Fig. 2 further groove is the square structure sketch map;
Fig. 4 is that Fig. 2 further groove is the trapezium structure sketch map;
Fig. 5 is that Fig. 2 further groove is the ladder-type structure sketch map;
Fig. 6 is the DC I-V characteristic comparison diagram to traditional HEMT device and HEMT device simulation gained of the present invention;
Fig. 7 is the breakdown characteristic figure to traditional HEMT device and HEMT device simulation gained of the present invention;
Fig. 8 is the gate leakage capacitance C to traditional HEMT device and HEMT device simulation gained of the present invention
GdComparison diagram.
Embodiment
Below in conjunction with accompanying drawing and with specific embodiment the present invention is done further explain, but and do not mean that it is any qualification content that the present invention protects.
With reference to shown in Figure 2; Said grid edge groove type source field plate structure HEMT; This HEMT is based on the Ⅲ-ⅤZu Huahewubandaoti heterojunction structure, and its structure comprises substrate layer 1, resilient coating 2, barrier layer 3, source electrode 4, grid 5, drain electrode 6, passivation layer 7, source field plate 8 and grid leak district gate edge groove 9; Said resilient coating 2 is positioned on the substrate layer 1, and said barrier layer 3 is positioned on the resilient coating 2, and the two ends on barrier layer 3 tops are respectively source electrode 4 and drain electrode 6, is grid 5 between wherein; Said passivation layer 7 is positioned at source electrode 4, grid 5 and drains on 6, and between source electrode and the grid and on the barrier layer between grid and the drain electrode; Said source field plate 8 is positioned on the passivation layer 7, and is connected with source electrode 4; Said grid leak district groove 9 is grooves that etching forms along grid 5 edges and on barrier layer 3 in the grid leak district, and said groove is along the grid width direction.
The substrate layer 1 of said HEMT device can be sapphire or carborundum or silicon; Resilient coating 2 is made up of the identical or different Ⅲ-ⅤZu Huahewubandaoti material of several layers, and its thickness is 1～5um; Barrier layer 3 is made up of the identical or different Ⅲ-ⅤZu Huahewubandaoti material of several layers, and its thickness is 10～40nm; Passivation layer 7 can be SiO
2, SiN, Al
2O
3, HfO
2Or other dielectric materials, its thickness is 0.05 ~ 0.8um; Can fill the dielectric material identical or different in the said groove with passivation layer 7.
Said grid edge groove type source field plate structure HEMT through in the grid leak district along grid 5 edges, the groove 9 that on barrier layer 3, etches; Reduced the edge collected electric field line of grid 5 near drain electrode 6 one sides; Reduced the electric field strength at this place; Reduce gate leakage current, thereby significantly improved the puncture voltage of HEMT device; Simultaneously, grid leak district gate edge groove 9 can not reduce the drain saturation current of device, thereby guarantees the high-output power density of this device; Secondly, grid leak district gate edge groove 9 has stoped the depletion layer under the gate electrode to leaking the drift region expansion, has reduced gate leakage capacitance, thereby has improved the frequency characteristic of said device.
A practical implementation example of the present invention is the HEMT that adopts grid edge groove type source field plate structure shown in Figure 2.Its substrate layer 1 is SiC, and resilient coating 2 is the GaN of 1.2um for thickness, and barrier layer 3 is that 25nm, al compsn are 0.3 Al for thickness
0.3Ga
0.7N, the grid leak distance is 2um, and passivation layer 7 is the SiN of 0.1um for thickness, and groove 9 is a square structure shown in Figure 3, and wherein the medium of filling out is Al
2O
3, depth of groove d is 15nm, recess width L is 0.9um.
Shown in Figure 6 is that conventional source field plate HEMT structure and HEMT structure of the present invention with above-mentioned said parameter are carried out the DC I-V curve that two-dimensional numerical analysis obtains.Show that through analyzing the drain saturation current of HEMT structure proposed by the invention is almost consistent with the drain saturation current of conventional source field plate structure.
Shown in Figure 7 is the breakdown characteristic of conventional source field plate structure HEMT and grid edge groove type source field plate structure HEMT of the present invention; As can be seen from the figure; Puncture in the puncture curve of conventional source field plate structure HEMT; Be that the drain-source voltage of drain current when increasing sharply is greatly about 162V; And the drain-source voltage when take place puncturing in the puncture curve of HEMT device of the present invention fully proves the puncture voltage of the puncture voltage of grid edge groove type of the present invention source field plate structure device much larger than conventional source field plate structure device greatly about 274V.
Shown in Figure 8 is gate leakage capacitance that two-dimensional numerical analysis obtains shows that through analyzing the gate leakage capacitance of grid edge groove type source field plate structure HEMT is compared obvious reduction with the gate leakage capacitance of conventional source field plate structure HEMT with the curve of frequency change.
Other examples of implementation of grid edge groove type source field plate structure HEMT according to the invention can change shape and structure, the degree of depth and the width of grid leak district gate edge groove 9, grid leak district groove 9 structures shown in Fig. 4 or Fig. 5 according to actual needs; Wherein said groove 9 degree of depth need less than barrier layer thickness.
Other examples of implementation of grid edge groove type source field plate structure HEMT according to the invention, its said resilient coating and barrier layer can be selected other Ⅲ-ⅤZu Huahewubandaoti materials for use, such as GaAs, AlN, InN, InAlN, InGaN.Can reach foregoing characteristics and technique effect equally.
Through embodiment according to the invention, and Fig. 6, Fig. 7 and shown in Figure 8, grid edge groove type source field plate structure HEMT according to the invention compares with the HEMT of conventional source field plate structure, has more superior frequency characteristic and the output power density of Geng Gao; Can apply to high frequency, great-power electronic field.
Claims (7)
1. a grid edge groove type source field plate structure HEMT comprises substrate layer (1), resilient coating (2), barrier layer (3), source electrode (4), grid (5), drain electrode (6), passivation layer (7) and source field plate (8); It is characterized in that also comprising the groove (9) in grid leak district, said grid leak district groove (9) is to go up groove that etching form along grid (5) edge at barrier layer (3) in the grid leak district, and said groove is along the grid width direction.
2. grid edge groove type according to claim 1 source field plate structure HEMT; A sidewall that it is characterized in that said grid leak district groove (9) aligns with the gate edge of drain electrode one side, in the barrier layer of another sidewall between grid and drain electrode.
3. grid edge groove type according to claim 1 and 2 source field plate structure HEMT is characterized in that said grid leak district groove (9) degree of depth is less than barrier layer thickness.
4. grid edge groove type according to claim 1 and 2 source field plate structure HEMT is characterized in that filling in the said grid leak district groove (9) air or silicon dioxide (SiO
2) or silicon nitride (SiN) or alundum (Al (Al
2O
3) or hafnium oxide (HfO
2).
5. grid edge groove type according to claim 1 and 2 source field plate structure HEMT is characterized in that said grid leak district groove (9) is a square structure.
6. grid edge groove type according to claim 1 and 2 source field plate structure HEMT is characterized in that said grid leak district groove (9) is a trapezium structure.
7. grid edge groove type according to claim 1 and 2 source field plate structure HEMT is characterized in that said grid leak district groove (9) is a ladder-type structure.
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Cited By (9)
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| CN103414437A (en) * | 2013-08-30 | 2013-11-27 | 电子科技大学 | AB/inverse F type multi-mode power amplifier based on gallium nitride transistor with high electro mobility |
| CN106601808A (en) * | 2016-12-19 | 2017-04-26 | 苏州捷芯威半导体有限公司 | Semiconductor device and preparation method thereof |
| CN110707154A (en) * | 2019-09-25 | 2020-01-17 | 西安理工大学 | AlGaN/GaN HEMT device with local groove structure |
| CN111527592A (en) * | 2017-12-28 | 2020-08-11 | 罗姆股份有限公司 | Nitride semiconductor device |
| WO2020253777A1 (en) * | 2019-06-18 | 2020-12-24 | 苏州能讯高能半导体有限公司 | Semiconductor device and preparation method thereof |
| CN114023805A (en) * | 2021-10-18 | 2022-02-08 | 西安电子科技大学 | 4H-SiC metal semiconductor field effect transistor with P-type doped region and concave buffer layer |
| CN115394650A (en) * | 2016-12-02 | 2022-11-25 | 维西埃-硅化物公司 | High electron mobility transistor with buried interconnect |
| CN115618785A (en) * | 2022-12-16 | 2023-01-17 | 电子科技大学 | Harmonic mean function-based gallium nitride transistor physical fundamental large signal model |
| CN117393597A (en) * | 2023-10-11 | 2024-01-12 | 上海新微半导体有限公司 | HEMT device and preparation method thereof |
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| CN114023805A (en) * | 2021-10-18 | 2022-02-08 | 西安电子科技大学 | 4H-SiC metal semiconductor field effect transistor with P-type doped region and concave buffer layer |
| CN115618785A (en) * | 2022-12-16 | 2023-01-17 | 电子科技大学 | Harmonic mean function-based gallium nitride transistor physical fundamental large signal model |
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Application publication date: 20121017 |